JP2002203682A - 発光装置及びその作製方法 - Google Patents
発光装置及びその作製方法Info
- Publication number
- JP2002203682A JP2002203682A JP2001327024A JP2001327024A JP2002203682A JP 2002203682 A JP2002203682 A JP 2002203682A JP 2001327024 A JP2001327024 A JP 2001327024A JP 2001327024 A JP2001327024 A JP 2001327024A JP 2002203682 A JP2002203682 A JP 2002203682A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- organic compound
- insulating layer
- emitting device
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 104
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 59
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000001301 oxygen Substances 0.000 claims abstract description 57
- 230000005525 hole transport Effects 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims description 144
- 239000000463 material Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 43
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 238000002347 injection Methods 0.000 claims description 31
- 239000007924 injection Substances 0.000 claims description 31
- 229910052783 alkali metal Inorganic materials 0.000 claims description 26
- 150000001340 alkali metals Chemical class 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 23
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 16
- 238000007740 vapor deposition Methods 0.000 claims description 13
- 150000004982 aromatic amines Chemical class 0.000 claims description 12
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 12
- -1 aromatic amine organic compound Chemical class 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims description 3
- 229940126062 Compound A Drugs 0.000 claims 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 36
- 230000006866 deterioration Effects 0.000 abstract description 18
- 239000007772 electrode material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 105
- 239000000758 substrate Substances 0.000 description 59
- 239000007789 gas Substances 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000001704 evaporation Methods 0.000 description 19
- 230000008020 evaporation Effects 0.000 description 18
- 230000001681 protective effect Effects 0.000 description 17
- 238000007789 sealing Methods 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000012546 transfer Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 238000000746 purification Methods 0.000 description 11
- 230000005281 excited state Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000004642 Polyimide Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 8
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000000859 sublimation Methods 0.000 description 7
- 230000008022 sublimation Effects 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000502 dialysis Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- 239000005407 aluminoborosilicate glass Substances 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000909 electrodialysis Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910010199 LiAl Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical group 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001327024A JP2002203682A (ja) | 2000-10-26 | 2001-10-24 | 発光装置及びその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-326290 | 2000-10-26 | ||
| JP2000326290 | 2000-10-26 | ||
| JP2001327024A JP2002203682A (ja) | 2000-10-26 | 2001-10-24 | 発光装置及びその作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004305085A Division JP2005100992A (ja) | 2000-10-26 | 2004-10-20 | 発光装置 |
| JP2008205639A Division JP5311919B2 (ja) | 2000-10-26 | 2008-08-08 | 発光装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002203682A true JP2002203682A (ja) | 2002-07-19 |
| JP2002203682A5 JP2002203682A5 (enExample) | 2005-06-30 |
Family
ID=26602786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001327024A Withdrawn JP2002203682A (ja) | 2000-10-26 | 2001-10-24 | 発光装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002203682A (enExample) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002190389A (ja) * | 2000-12-22 | 2002-07-05 | Nippon Steel Chem Co Ltd | 有機ｅｌ素子の製造方法及び装置 |
| JP2003217855A (ja) * | 2002-01-28 | 2003-07-31 | Matsushita Electric Ind Co Ltd | エレクトロルミネッセンス表示装置及びその製造方法 |
| JP2004095551A (ja) * | 2002-08-09 | 2004-03-25 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| JP2004134397A (ja) * | 2002-09-20 | 2004-04-30 | Semiconductor Energy Lab Co Ltd | 発光装置及び発光装置の作製方法 |
| WO2004040945A1 (en) * | 2002-10-30 | 2004-05-13 | Canon Kabushiki Kaisha | Display device |
| JP2004214683A (ja) * | 2002-12-31 | 2004-07-29 | Samsung Electronics Co Ltd | 可撓性基板上に保護キャップを具備する薄膜半導体素子、これを利用する電子装置及びその製造方法 |
| JP2004327262A (ja) * | 2003-04-25 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| WO2004107821A1 (ja) * | 2003-05-21 | 2004-12-09 | Pioneer Corporation | 有機エレクトロルミネセンス表示パネル |
| JP2005222733A (ja) * | 2004-02-03 | 2005-08-18 | Shimadzu Corp | 有機エレクトロルミネッセンス素子およびその製造方法 |
| JP2005309400A (ja) * | 2004-03-26 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
| WO2006134863A1 (ja) * | 2005-06-15 | 2006-12-21 | Ulvac, Inc. | 封止装置及び封止方法 |
| JP2008130646A (ja) * | 2006-11-17 | 2008-06-05 | Canon Inc | 有機ｅｌ素子 |
| JP2008159600A (ja) * | 2008-03-24 | 2008-07-10 | Sanyo Electric Co Ltd | 有機ｅｌパネル |
| JP2008277648A (ja) * | 2007-05-02 | 2008-11-13 | Seiko Epson Corp | 有機ｅｌ素子及び有機ｅｌ素子の製造方法 |
| JP2010212251A (ja) * | 2004-06-04 | 2010-09-24 | Samsung Mobile Display Co Ltd | エレクトロルミネッセンスディスプレイ装置及びその製造方法 |
| US8038496B2 (en) | 2004-03-26 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light emitting device and using an electrode layer as a mask during manufacturing |
| CN108682370A (zh) * | 2015-09-02 | 2018-10-19 | 欧库勒斯虚拟现实有限责任公司 | 显示器及用于制造显示器的方法 |
| WO2021199189A1 (ja) * | 2020-03-30 | 2021-10-07 | シャープ株式会社 | 表示装置およびその製造方法 |
| US11727869B2 (en) | 2016-04-26 | 2023-08-15 | Meta Platforms Technologies, Llc | Display with redundant light emitting devices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7230271B2 (en) | 2002-06-11 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof |
Citations (5)
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| JP2005222733A (ja) * | 2004-02-03 | 2005-08-18 | Shimadzu Corp | 有機エレクトロルミネッセンス素子およびその製造方法 |
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| JP2010212251A (ja) * | 2004-06-04 | 2010-09-24 | Samsung Mobile Display Co Ltd | エレクトロルミネッセンスディスプレイ装置及びその製造方法 |
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| WO2006134863A1 (ja) * | 2005-06-15 | 2006-12-21 | Ulvac, Inc. | 封止装置及び封止方法 |
| JP2008130646A (ja) * | 2006-11-17 | 2008-06-05 | Canon Inc | 有機ｅｌ素子 |
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| JP2008159600A (ja) * | 2008-03-24 | 2008-07-10 | Sanyo Electric Co Ltd | 有機ｅｌパネル |
| CN108682370A (zh) * | 2015-09-02 | 2018-10-19 | 欧库勒斯虚拟现实有限责任公司 | 显示器及用于制造显示器的方法 |
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| US11727869B2 (en) | 2016-04-26 | 2023-08-15 | Meta Platforms Technologies, Llc | Display with redundant light emitting devices |
| WO2021199189A1 (ja) * | 2020-03-30 | 2021-10-07 | シャープ株式会社 | 表示装置およびその製造方法 |
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