JP2002176001A - 熱処理装置 - Google Patents
熱処理装置Info
- Publication number
- JP2002176001A JP2002176001A JP2000370783A JP2000370783A JP2002176001A JP 2002176001 A JP2002176001 A JP 2002176001A JP 2000370783 A JP2000370783 A JP 2000370783A JP 2000370783 A JP2000370783 A JP 2000370783A JP 2002176001 A JP2002176001 A JP 2002176001A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heat treatment
- processing chamber
- light source
- refrigerant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 239000003507 refrigerant Substances 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010453 quartz Substances 0.000 claims abstract description 14
- 230000004397 blinking Effects 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- 229910001507 metal halide Inorganic materials 0.000 claims description 2
- 150000005309 metal halides Chemical class 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 54
- 239000012535 impurity Substances 0.000 abstract description 31
- 239000011521 glass Substances 0.000 abstract description 26
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000002826 coolant Substances 0.000 abstract description 10
- 238000005247 gettering Methods 0.000 abstract description 8
- 230000003213 activating effect Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 110
- 238000002425 crystallisation Methods 0.000 description 18
- 230000008025 crystallization Effects 0.000 description 18
- 238000005530 etching Methods 0.000 description 18
- 238000001816 cooling Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 6
- 238000004381 surface treatment Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 3
- 239000005407 aluminoborosilicate glass Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- -1 for example Chemical compound 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229940078494 nickel acetate Drugs 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 102100033040 Carbonic anhydrase 12 Human genes 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000867855 Homo sapiens Carbonic anhydrase 12 Proteins 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Control Of Resistance Heating (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000370783A JP2002176001A (ja) | 2000-12-05 | 2000-12-05 | 熱処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000370783A JP2002176001A (ja) | 2000-12-05 | 2000-12-05 | 熱処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002176001A true JP2002176001A (ja) | 2002-06-21 |
| JP2002176001A5 JP2002176001A5 (enrdf_load_stackoverflow) | 2008-01-24 |
Family
ID=18840609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000370783A Withdrawn JP2002176001A (ja) | 2000-12-05 | 2000-12-05 | 熱処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002176001A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007073953A (ja) * | 2005-09-06 | 2007-03-22 | Tera Semicon Corp | 多結晶シリコン薄膜製造方法及びその製造装置 |
| US7575985B2 (en) | 2000-12-05 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
| CN115347125A (zh) * | 2022-10-18 | 2022-11-15 | 中国华能集团清洁能源技术研究院有限公司 | 一种钙钛矿材料快速原位退火的方法及退火装置 |
| JP2024111673A (ja) * | 2023-02-06 | 2024-08-19 | メトロ電気工業株式会社 | 加熱装置 |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5938584A (ja) * | 1982-08-30 | 1984-03-02 | ウシオ電機株式会社 | 照射加熱炉の運転方法 |
| JPS6229131A (ja) * | 1985-07-31 | 1987-02-07 | Hitachi Ltd | 薄膜形成方法 |
| JPS63200526A (ja) | 1987-02-17 | 1988-08-18 | Shinetsu Sekiei Kk | 減圧熱処理装置に用いられる反応管 |
| JPH05198507A (ja) * | 1991-09-21 | 1993-08-06 | Semiconductor Energy Lab Co Ltd | 半導体作製方法 |
| JPH06268242A (ja) | 1993-03-17 | 1994-09-22 | Matsushita Electric Ind Co Ltd | シリコン基板の製造方法および結晶質シリコン太陽電池 |
| JPH0729839A (ja) * | 1993-07-15 | 1995-01-31 | Sony Corp | 熱処理装置及びこれを用いた熱処理方法 |
| JPH07169974A (ja) | 1993-09-20 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH0851076A (ja) | 1994-05-30 | 1996-02-20 | Sanyo Electric Co Ltd | 半導体装置，半導体装置の製造方法，薄膜トランジスタ ，薄膜トランジスタの製造方法，表示装置 |
| JPH08264472A (ja) * | 1995-03-24 | 1996-10-11 | Hitachi Ltd | 半導体装置の製造方法及び半導体製造装置 |
| JPH08330602A (ja) | 1995-03-27 | 1996-12-13 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JPH0951100A (ja) * | 1995-08-04 | 1997-02-18 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPH1070077A (ja) * | 1996-07-24 | 1998-03-10 | Internatl Business Mach Corp <Ibm> | パルス状の急速な熱アニーリングによる多結晶シリコンの成長方法 |
| JPH1197706A (ja) | 1997-09-23 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| WO2000031777A1 (en) * | 1998-11-20 | 2000-06-02 | Steag Rtp Systems, Inc. | Fast heating and cooling apparatus for semiconductor wafers |
| JP2000260710A (ja) | 1999-03-11 | 2000-09-22 | Seiko Epson Corp | 半導体装置の製造方法及びアニール装置 |
-
2000
- 2000-12-05 JP JP2000370783A patent/JP2002176001A/ja not_active Withdrawn
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5938584A (ja) * | 1982-08-30 | 1984-03-02 | ウシオ電機株式会社 | 照射加熱炉の運転方法 |
| JPS6229131A (ja) * | 1985-07-31 | 1987-02-07 | Hitachi Ltd | 薄膜形成方法 |
| JPS63200526A (ja) | 1987-02-17 | 1988-08-18 | Shinetsu Sekiei Kk | 減圧熱処理装置に用いられる反応管 |
| JPH05198507A (ja) * | 1991-09-21 | 1993-08-06 | Semiconductor Energy Lab Co Ltd | 半導体作製方法 |
| JPH06268242A (ja) | 1993-03-17 | 1994-09-22 | Matsushita Electric Ind Co Ltd | シリコン基板の製造方法および結晶質シリコン太陽電池 |
| JPH0729839A (ja) * | 1993-07-15 | 1995-01-31 | Sony Corp | 熱処理装置及びこれを用いた熱処理方法 |
| JPH07169974A (ja) | 1993-09-20 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH0851076A (ja) | 1994-05-30 | 1996-02-20 | Sanyo Electric Co Ltd | 半導体装置，半導体装置の製造方法，薄膜トランジスタ ，薄膜トランジスタの製造方法，表示装置 |
| JPH08264472A (ja) * | 1995-03-24 | 1996-10-11 | Hitachi Ltd | 半導体装置の製造方法及び半導体製造装置 |
| JPH08330602A (ja) | 1995-03-27 | 1996-12-13 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JPH0951100A (ja) * | 1995-08-04 | 1997-02-18 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPH1070077A (ja) * | 1996-07-24 | 1998-03-10 | Internatl Business Mach Corp <Ibm> | パルス状の急速な熱アニーリングによる多結晶シリコンの成長方法 |
| JPH1197706A (ja) | 1997-09-23 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| WO2000031777A1 (en) * | 1998-11-20 | 2000-06-02 | Steag Rtp Systems, Inc. | Fast heating and cooling apparatus for semiconductor wafers |
| JP2000260710A (ja) | 1999-03-11 | 2000-09-22 | Seiko Epson Corp | 半導体装置の製造方法及びアニール装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7575985B2 (en) | 2000-12-05 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
| JP2007073953A (ja) * | 2005-09-06 | 2007-03-22 | Tera Semicon Corp | 多結晶シリコン薄膜製造方法及びその製造装置 |
| CN115347125A (zh) * | 2022-10-18 | 2022-11-15 | 中国华能集团清洁能源技术研究院有限公司 | 一种钙钛矿材料快速原位退火的方法及退火装置 |
| JP2024111673A (ja) * | 2023-02-06 | 2024-08-19 | メトロ電気工業株式会社 | 加熱装置 |
| JP7661376B2 (ja) | 2023-02-06 | 2025-04-14 | メトロ電気工業株式会社 | 加熱装置 |
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