JP2002161190A - Method of manufacturing resin composition for recovering mold releasability - Google Patents

Method of manufacturing resin composition for recovering mold releasability

Info

Publication number
JP2002161190A
JP2002161190A JP2000359940A JP2000359940A JP2002161190A JP 2002161190 A JP2002161190 A JP 2002161190A JP 2000359940 A JP2000359940 A JP 2000359940A JP 2000359940 A JP2000359940 A JP 2000359940A JP 2002161190 A JP2002161190 A JP 2002161190A
Authority
JP
Japan
Prior art keywords
mold
resin composition
wax
resin
polyethylene oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000359940A
Other languages
Japanese (ja)
Other versions
JP4788033B2 (en
Inventor
Shinichi Maebotoke
伸一 前佛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2000359940A priority Critical patent/JP4788033B2/en
Publication of JP2002161190A publication Critical patent/JP2002161190A/en
Application granted granted Critical
Publication of JP4788033B2 publication Critical patent/JP4788033B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Landscapes

  • Moulds For Moulding Plastics Or The Like (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide method of manufacturing a resin composition excellent in recovering mold releasability of a metal mold for sealing a semiconductor. SOLUTION: The resin composition essentially consists of (A) an epoxy resin, (B) a phenol resin, (C) an accelerator (D1) urethanes of a microcrystallin oxide wax and a polyethylene oxide wax, (E) an antioxidant and (F) an inorganic filler, they are respectively heated, kneaded and cooled to be 4 mesh or less grinded particles. The resin composition is obtained by adding (D2) urethanes of a microcrystallin oxide wax and a polyethylene oxide wax to the grinded particles and mixing; [(D1)+(D2)]=0.1-2 wt.%, [(D2)]/[(D1)+(D2)]>=25 wt.%, the particle size of (D2) is 16 mesh or less.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体封止用金型
離型回復樹脂組成物の製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a mold release recovery resin composition for encapsulating a semiconductor.

【0002】[0002]

【従来の技術】近年の電子機器の小型化、軽量化、高性
能化の市場動向において、半導体素子の高集積化が年々
進み、又半導体装置の表面実装化が促進されるなかで、
半導体封止用エポキシ樹脂組成物への要求は益々厳しい
ものとなってきている。この要求に対応する様々な樹脂
や添加剤が用いられた半導体封止用エポキシ樹脂組成物
は、連続成形時に金型汚れが発生し、金型取られ、未充
填等の成形不具合が起こりやすくなり、そのため定期的
に金型表面のクリーニングを行うことが通常となってき
ている。
2. Description of the Related Art In recent market trends of miniaturization, weight reduction, and high performance of electronic devices, as semiconductor devices become more highly integrated year by year and surface mounting of semiconductor devices is promoted,
Demands for epoxy resin compositions for semiconductor encapsulation are becoming increasingly stringent. Epoxy resin compositions for semiconductor encapsulation using various resins and additives that meet this requirement are subject to mold contamination during continuous molding, mold removal, and molding defects such as unfilling. Therefore, it has become common to periodically clean the mold surface.

【0003】従来、半導体封止用金型のクリーニング材
は、アミノ系樹脂のような成形収縮率の大きい樹脂と結
晶破砕シリカ、ガラス繊維等の硬度の高い充填材等から
なり、このクリーニング材を用いて金型表面の汚れを削
り落とすというものが主体であった。クリーニング材を
使用した後は金型表面が綺麗になる反面、金型表面の離
型剤も取り去るため、クリーニングした直後に成形され
た半導体装置は極端に離型性が悪くなるという問題があ
った。そのためクリーニング材の使用後に、金型離型回
復樹脂組成物を用いて、金型表面に金型離型回復樹脂組
成物中の離型剤を移行させ塗布し、離型性を回復させる
必要がある。
Conventionally, a cleaning material for a semiconductor encapsulating mold is made of a resin having a large molding shrinkage such as an amino resin and a filler having a high hardness such as crystal-crushed silica and glass fiber. It was mainly used to remove dirt on the mold surface by using. After using the cleaning material, the mold surface becomes clean, but since the mold release agent on the mold surface is also removed, there is a problem that the semiconductor device molded immediately after cleaning has extremely poor releasability. . Therefore, after the use of the cleaning material, it is necessary to use the mold release recovery resin composition to transfer and apply the release agent in the mold release recovery resin composition to the mold surface to restore the mold releasability. is there.

【0004】金型離型回復樹脂組成物の機能は、金型表
面に離型剤を移行させ塗布し、速やかに離型性を回復す
ることにあるが、多量の離型剤を移行させてしまうと、
その後成形した半導体装置の表面に油浮きや汚れを起こ
すという問題があり、十分に離型剤を移行できない場合
は離型性が回復できず、離型回復樹脂組成物を多量に用
いる必要があるという問題が発生する。更に離型性回復
後の離型性を長く持続できない場合は、頻繁に離型回復
樹脂組成物を用いる必要があり生産性が低下するので、
生産性向上等のため、より金型離型回復性に優れた半導
体封止用金型離型回復樹脂組成物が求められている。
The function of the mold release recovery resin composition is to transfer and apply the release agent to the surface of the mold to quickly recover the release property. When you put it,
After that, there is a problem that oil is floated or stained on the surface of the molded semiconductor device, and when the release agent cannot be sufficiently transferred, the releasability cannot be recovered, and it is necessary to use a large amount of the release recovery resin composition. The problem occurs. Further, if the releasability after release recovery cannot be maintained for a long time, it is necessary to frequently use the release recovery resin composition, and the productivity is reduced.
In order to improve productivity and the like, a mold release recovery resin composition for semiconductor encapsulation that is more excellent in mold release recovery is demanded.

【0005】[0005]

【発明が解決しようとする課題】本発明は、特定の製造
方法で得られた金型離型回復樹脂組成物であって、この
樹脂組成物は少量でも離型性を回復させ、離型性回復直
後の半導体装置の表面に油浮きや汚れを生じず、離型性
を長く維持できる半導体封止用金型離型回復樹脂組成物
の製造方法を提供するものである。
DISCLOSURE OF THE INVENTION The present invention relates to a mold release-recovery resin composition obtained by a specific manufacturing method. An object of the present invention is to provide a method for producing a mold-releasing resin composition for semiconductor encapsulation, which can maintain a long releasability without causing oil floating or contamination on the surface of a semiconductor device immediately after recovery.

【0006】[0006]

【課題を解決するための手段】本発明は、(A)エポキ
シ樹脂、(B)フェノール樹脂、(C)硬化促進剤、
(D1)酸化マイクロクリスタリンワックスと酸化ポリ
エチレンワックス及び/又は酸化マイクロクリスタリン
ワックスと酸化ポリエチレンワックスのウレタン化物、
(E)酸化防止剤、及び(F)無機充填材を必須成分と
し、前記各成分を加熱混練冷却後4メッシュ以下の粉砕
物とし、前記粉砕物に(D2)酸化マイクロクリスタリ
ンワックスと酸化ポリエチレンワックス及び/又は酸化
マイクロクリスタリンワックスと酸化ポリエチレンワッ
クスのウレタン化物を添加混合して得られる金型離型回
復樹脂組成物であって、その配合割合[(D1)+(D
2)]が全樹脂組成物中の0.1〜2重量%、[(D
2)]/[(D1)+(D2)]≧25重量%で、(D
2)の粒度が16メッシュ以下であることを特徴とする
半導体封止用金型離型回復樹脂組成物の製造方法であ
る。
The present invention provides (A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator,
(D1) urethane compounds of oxidized microcrystalline wax and polyethylene oxide and / or oxidized microcrystalline wax and polyethylene oxide;
(E) An antioxidant and (F) an inorganic filler are essential components, and the above components are heated, kneaded and cooled to obtain a crushed product of 4 mesh or less, and the crushed product contains (D2) oxidized microcrystalline wax and polyethylene oxide wax. And / or a mold release recovery resin composition obtained by adding and mixing a urethane compound of an oxidized microcrystalline wax and a oxidized polyethylene wax, and the mixing ratio [(D1) + (D
2)] is 0.1 to 2% by weight of the total resin composition, [(D
2)] / [(D1) + (D2)] ≧ 25% by weight and (D
2) A method for producing a mold-recovery resin composition for semiconductor encapsulation, wherein the particle size is 16 mesh or less.

【0007】[0007]

【発明の実施の形態】本発明で用いられるエポキシ樹脂
としては、特に限定するものではないが、例えば、フェ
ノールノボラック型エポキシ樹脂、クレゾールノボラッ
ク型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビスフ
ェノール型エポキシ樹脂、スチルベン型エポキシ樹脂、
トリフェノールメタン型エポキシ樹脂、フェノールアラ
ルキル型エポキシ樹脂、ナフタレン型エポキシ樹脂、ア
ルキル変性トリフェノールメタン型エポキシ樹脂、トリ
アジン核含有エポキシ樹脂、ジシクロペンタジエン変性
フェノール型エポキシ樹脂等が挙げられ、これらは単独
でも混合して用いてもよい。
BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin used in the present invention is not particularly limited. For example, phenol novolak epoxy resin, cresol novolak epoxy resin, biphenyl epoxy resin, bisphenol epoxy resin, stilbene Type epoxy resin,
Triphenol methane type epoxy resin, phenol aralkyl type epoxy resin, naphthalene type epoxy resin, alkyl-modified triphenol methane type epoxy resin, triazine nucleus containing epoxy resin, dicyclopentadiene modified phenol type epoxy resin, etc. You may mix and use.

【0008】本発明で用いられるフェノール樹脂として
は、特に限定するものではないが、例えば、フェノール
ノボラック樹脂、クレゾールノボラック樹脂、ナフトー
ルアラルキル樹脂、トリフェノールメタン樹脂、テルペ
ン変性フェノール樹脂、ジシクロペンタジエン変性フェ
ノール樹脂、フェニレン及び/又はジフェニレン骨格を
有するフェノールアラルキル樹脂等が挙げられ、これら
は単独でも混合して用いてもよい。エポキシ樹脂とフェ
ノール樹脂との配合割合は特に限定するものではない
が、エポキシ基/フェルーノール水酸基比としては、
0.9〜1.2が好ましく、更に好ましくは0.95〜
1.15が望ましい。この範囲から大きく外れると、樹
脂組成物が充分に硬化せず離型性低下等の作業性の悪化
が起こるおそれがある。
The phenolic resin used in the present invention is not particularly limited. For example, phenol novolak resin, cresol novolak resin, naphthol aralkyl resin, triphenolmethane resin, terpene-modified phenol resin, dicyclopentadiene-modified phenol Examples thereof include a resin, a phenol aralkyl resin having a phenylene and / or diphenylene skeleton, and these may be used alone or as a mixture. The mixing ratio of the epoxy resin and the phenol resin is not particularly limited, but the epoxy group / fernol hydroxyl group ratio is as follows:
0.9-1.2 is preferable, and 0.95-1.2 is more preferable.
1.15 is desirable. If the amount deviates greatly from this range, the resin composition may not be sufficiently cured, and the workability may deteriorate such as a decrease in releasability.

【0009】本発明で用いられる硬化促進剤としては、
前記エポキシ樹脂とフェノール樹脂との架橋反応の触媒
となり得るものを指し、例えば、トリブチルアミン、
1,8−ジアザビシクロ(5,4,0)ウンデセン−7
等のアミン系化合物、トリフェニルホスフィン、テトラ
フェニルホスホニウム・テトラフェニルボレート塩等の
有機リン系化合物、2−メチルイミダゾール等のイミダ
ゾール化合物等が挙げられるが、これらに限定されるも
のではない。又これらの硬化促進剤は単独でも混合して
用いてもよい。
[0009] The curing accelerator used in the present invention includes:
Refers to those that can be a catalyst for the crosslinking reaction between the epoxy resin and the phenol resin, for example,
1,8-diazabicyclo (5,4,0) undecene-7
And the like, an organic phosphorus-based compound such as triphenylphosphine, tetraphenylphosphonium / tetraphenylborate salt, and an imidazole compound such as 2-methylimidazole, but are not limited thereto. These curing accelerators may be used alone or as a mixture.

【0010】本発明で用いられる酸化マイクロクリスタ
リンワックスは、重油留分から得られるn−パラフィン
及び分岐炭化水素を含むマイクロクリスタリンワックス
を酸化することで得られ、カルボキシル基や水酸基を含
むものである。一般的に、n−パラフィン及び分岐炭化
水素を含むマイクロクリスタリンワックスは、樹脂成分
との相溶性に乏しく、樹脂組成物の粘度が上昇し、更に
成形時に金型表面に過度に染み出し、金型離型回復効果
には優れるものの、離型性回復直後に成形した半導体装
置に油浮きや汚れが生じるという欠点がある。そこで酸
化マイクロクリスタリンワックスを用いると、樹脂成分
との適度な相溶性による製品への油浮き、汚れの防止
と、更に流動性を付与でき、優れた離型回復性を図るこ
とができる。
The oxidized microcrystalline wax used in the present invention is obtained by oxidizing a microcrystalline wax containing n-paraffin and branched hydrocarbon obtained from a heavy oil fraction, and contains a carboxyl group or a hydroxyl group. Generally, a microcrystalline wax containing n-paraffin and a branched hydrocarbon has poor compatibility with a resin component, increases the viscosity of a resin composition, and excessively exudes to the surface of a mold during molding. Although excellent in the release recovery effect, there is a drawback in that the semiconductor device formed immediately after the recovery from the release property has oil floating and dirt. Therefore, when the oxidized microcrystalline wax is used, it is possible to prevent oil floating and dirt on the product due to appropriate compatibility with the resin component, to further impart fluidity, and to achieve excellent mold release recovery.

【0011】酸化ポリエチレンワックスは、エチレン重
合法やポリエチレンの熱分解物として得られるポリエチ
レンワックスを酸化することで得られ、カルボキシル基
や水酸基を含むものである。分子量1000〜1000
0程度のものが一般的である。分子量は特に限定するも
のではないが、離型回復樹脂組成物の低粘度化のために
は、低分子量のものを用いることが好ましい。一般的
に、ポリエチレンワックスは、融点が高く、樹脂成分と
の相溶性にも乏しく、成形時に金型表面に過度に染み出
し、離型性回復直後に成形した半導体装置に汚れが付着
するという欠点がある。そこで酸化ポリエチレンワック
スを用いると、樹脂成分との適度な相溶性により、汚れ
防止を図ることができる。
The oxidized polyethylene wax is obtained by oxidizing a polyethylene wax obtained as an ethylene polymerization method or a thermal decomposition product of polyethylene, and contains a carboxyl group or a hydroxyl group. Molecular weight 1000-1000
A value of about 0 is generally used. Although the molecular weight is not particularly limited, it is preferable to use one having a low molecular weight in order to lower the viscosity of the release recovery resin composition. In general, polyethylene wax has a high melting point, poor compatibility with resin components, excessive oozing on the mold surface during molding, and contamination of the molded semiconductor device immediately after recovery from mold release. There is. Thus, the use of oxidized polyethylene wax makes it possible to prevent contamination due to appropriate compatibility with the resin component.

【0012】本発明では、更に前記の酸化マイクロクリ
スタリンワックス及び酸化ポリエチレンワックスのウレ
タン化物を用いることができる。これらは離型性回復直
後に成形した半導体装置への油浮き、汚れ防止と、低粘
度化が図れ、離型回復効果を発揮するものである。ウレ
タン化の方法は、特に限定するものではないが、例えば
メチレンジイソシアネート、トルエンジイソシアネート
等のイソシアネート類と、酸化マイクロクリスタリンワ
ックス及び酸化ポリエチレンワックスの水酸基、或いは
カルボキシル基とを反応させて行う。本発明では、酸化
マイクロクリスタリンワックスのウレタン化物と酸化ポ
リエチレンワックスのウレタン化物を用いても、或いは
酸化マイクロクリスタリンワックスと酸化ポリエチレン
ワックスとを予め混合して、ウレタン化物としたものを
離型剤として用いてもよい。ウレタン化の割合について
は、特に限定するものではないが、得られたワックス中
の窒素分で0.3〜5重量%の含有率が望ましい。ウレ
タン化部分が多過ぎると、ワックス自体の粘度が上昇し
材料化が困難になる。
In the present invention, urethane compounds of the above-mentioned oxidized microcrystalline wax and oxidized polyethylene wax can be used. These are intended to prevent oil floating and contamination on the molded semiconductor device immediately after the release property is recovered, to reduce the viscosity, and to exhibit a release recovery effect. The method of urethanization is not particularly limited, but is performed by, for example, reacting isocyanates such as methylene diisocyanate and toluene diisocyanate with hydroxyl groups or carboxyl groups of oxidized microcrystalline wax and oxidized polyethylene wax. In the present invention, a urethane compound of oxidized microcrystalline wax and a urethane compound of polyethylene oxide wax may be used, or a urethane compound obtained by previously mixing an oxidized microcrystalline wax and a polyethylene oxide wax may be used as a release agent. You may. The ratio of urethanization is not particularly limited, but a content of 0.3 to 5% by weight of nitrogen in the obtained wax is desirable. If there are too many urethane parts, the viscosity of the wax itself will increase and it will be difficult to materialize.

【0013】本発明で用いられる酸化マイクロクリスタ
リンワックスと酸化ポリエチレンワックス及び/又は酸
化マイクロクリスタリンワックスと酸化ポリエチレンワ
ックスのウレタン化物の配合量は、特に限定するもので
はないが全樹脂組成物中に0.1〜2重量%が好まし
く、更に好ましく0.5〜1.5重量%が望ましい。2
重量%を越えると金型に過度に染み出し、離型回復直後
の半導体装置に油浮きが生じるという問題がある。又
0.1重量%未満だと金型表面に離型剤が充分に移行せ
ず、期待されるような金型離型回復性が得られなないお
それがある。本発明の半導体封止用金型離型回復樹脂組
成物の製造方法において、製造工程の前半で添加するワ
ックス(D1)と製造工程の後半で添加するワックス
(D2)の配合量[(D1)+(D2)]は、全樹脂組
成物中0.1〜2重量%で、その配合割合[(D2)]
/[(D1)+(D2)]≧25重量%であり、(D
2)の粒度としては16メッシュ以下のものである。
The compounding amount of the oxidized microcrystalline wax and the polyethylene oxide and / or the urethane compound of the oxidized microcrystalline wax and the polyethylene oxide used in the present invention is not particularly limited, but is not limited to 0.1 in the total resin composition. The content is preferably 1 to 2% by weight, more preferably 0.5 to 1.5% by weight. 2
If the amount is more than 10% by weight, there is a problem that the semiconductor device is excessively soaked in the metal mold and oil is floated on the semiconductor device immediately after the recovery from the mold release. If the content is less than 0.1% by weight, the release agent does not sufficiently migrate to the surface of the mold, and the expected mold release recovery may not be obtained. In the method for producing a mold release resin composition for semiconductor encapsulation of the present invention, the compounding amount of the wax (D1) added in the first half of the production process and the wax (D2) added in the second half of the production process [(D1) + (D2)] is 0.1 to 2% by weight in the whole resin composition, and its compounding ratio [(D2)]
/ [(D1) + (D2)] ≧ 25% by weight, and (D
The particle size of 2) is 16 mesh or less.

【0014】粒子が小さすぎる場合、成形時の熱により
溶融したワックスの一部が樹脂成分と相溶してしまい、
金型表面への染み出しが少なくなり充分な離型性回復効
果が得られず、離型回復樹脂組成物の添加量が多くなり
生産性が低下する。又粒子が大きすぎる場合、過度に染
み出したワックスが金型からの熱で徐々に酸化され、離
型性が低下し、長時間離型性を維持することが難しく好
ましくない。[(D2)]/[(D1)+(D2)]が
25重量%未満では、離型回復樹脂組成物自体の離型性
は充分なものの、金型表面へ移行し塗布出来るワックス
量が少なくなり、充分な離型回復効果が得られない。
If the particles are too small, part of the wax melted by the heat during molding will be compatible with the resin component,
Exudation to the surface of the mold is reduced, and a sufficient effect of restoring releasability is not obtained, so that the amount of the release-restoring resin composition to be added increases and productivity decreases. If the particles are too large, the excessively exuded wax is gradually oxidized by the heat from the mold, and the releasability is lowered, and it is difficult to maintain the releasability for a long time, which is not preferable. When [(D2)] / [(D1) + (D2)] is less than 25% by weight, the releasability of the release-recovery resin composition itself is sufficient, but the amount of wax that can be transferred to the mold surface and applied is small. And a sufficient demolding recovery effect cannot be obtained.

【0015】本発明で用いられる酸化防止剤は、金型表
面に染み出しワックスの酸化を抑える機能を有し、長時
間離型性を維持するためのものである。配合量について
は、特に限定しないが、全樹脂組成物中に0.1〜0.
5重量%が望ましい。0.1重量%未満だとその効果が
不十分で、0.5重量%を越えると酸化防止剤がブリー
ドアウトして、成形品汚れを生じるという問題がある。
ここで用いられる酸化防止剤は、例えば2,6-ジター
シャリーブチル-p-クレゾール等のBHT誘導体、p-
ベンゾキノン等のキノン誘導体、ジラウリルチオプロピ
オネートといった硫黄系酸化防止剤、カテコール、ビタ
ミンC,ビタミンE等が挙げられる。本発明で用いられ
る無機充填材としては、例えば溶融球状シリカ、結晶破
砕シリカ等が挙げられる。
The antioxidant used in the present invention has the function of suppressing the oxidation of the wax that has exuded onto the mold surface and is intended to maintain the releasability for a long time. The amount is not particularly limited, but may be 0.1 to 0.1 in the entire resin composition.
5% by weight is desirable. If the amount is less than 0.1% by weight, the effect is insufficient. If the amount exceeds 0.5% by weight, there is a problem that the antioxidant bleeds out and stains of a molded article occur.
The antioxidant used here is, for example, a BHT derivative such as 2,6-di-tert-butyl-p-cresol,
Examples thereof include quinone derivatives such as benzoquinone, sulfur-based antioxidants such as dilaurylthiopropionate, catechol, vitamin C and vitamin E. Examples of the inorganic filler used in the present invention include fused spherical silica and crystal-crushed silica.

【0016】本発明の金型離型回復樹脂組成物には、
(A)〜(F)成分の他に、必要に応じてカルナバワッ
クス、ステアリン酸、モンタン酸ワックスといった離型
剤や、カップリング剤、カーボンブラック等の着色剤等
の添加剤を用いてもよい。本発明の金型離型回復樹脂組
成物は、(A)エポキシ樹脂、(B)フェノール樹脂、
(C)硬化促進剤、(D1)酸化マイクロクリスタリン
ワックスと酸化ポリエチレンワックス及び/又は酸化マ
イクロクリスタリンワックスと酸化ポリエチレンワック
スのウレタン化物、(E)酸化防止剤、及び(F)無機
充填材をミキサー等を用いて混合後、加熱ニーダ、熱ロ
ール、押し出し機等を用いて加熱混練し、続いて冷却粉
砕後4メッシュ以下の粉砕物とし、前記粉砕物に、(D
2)粒度が16メッシュ以下の酸化マイクロクリスタリ
ンワックスと酸化ポリエチレンワックス及び/又は酸化
マイクロクリスタリンワックスと酸化ポリエチレンワッ
クスのウレタン化物を添加混合した後タブレト化して得
られる。4メッシュ以下の粉砕物と16メッシュ以下の
(D2)を混合する際に発熱するような混合法だと、
(D2)が溶融するし樹脂との相溶が起こり、離型回復
樹脂組成物として、使用時に金型表面にワックスが充分
に移行し塗布することが出来ず充分な離型回復効果が発
揮できないので好ましくない。
The mold release recovery resin composition of the present invention includes:
In addition to the components (A) to (F), a release agent such as carnauba wax, stearic acid, or montanic acid wax, or an additive such as a coupling agent or a coloring agent such as carbon black may be used as necessary. . The mold release recovery resin composition of the present invention comprises (A) an epoxy resin, (B) a phenol resin,
(C) a curing accelerator, (D1) a urethane compound of oxidized microcrystalline wax and polyethylene oxide and / or oxidized microcrystalline wax and polyethylene oxide, (E) an antioxidant, and (F) an inorganic filler as a mixer or the like. And then kneading by heating using a heating kneader, a hot roll, an extruder, etc., followed by cooling and pulverization to obtain a pulverized product of 4 mesh or less.
2) It is obtained by adding and mixing oxidized microcrystalline wax and polyethylene oxide having a particle size of 16 mesh or less and / or urethane compound of oxidized microcrystalline wax and polyethylene oxide, and then forming a tablet. When mixing a pulverized product of 4 mesh or less and (D2) of 16 mesh or less, a mixing method that generates heat is used,
(D2) is melted and becomes compatible with the resin, and as a release-releasing resin composition, the wax cannot sufficiently migrate to the mold surface during use and cannot be applied, so that a sufficient release-recovery effect cannot be exhibited. It is not preferable.

【0017】[0017]

【実施例】以下、本発明を実施例で具体的に説明する。
配合割合は重量部とする。 実施例1 組成物1 オルソクレゾールノボラック型エポキシ樹脂 21.4重量部 フェノールノボラック樹脂 10.1重量部 1,8 −ジアザビシクロ(5,4,0)ウンデセン−7(以下、DBUと いう) 0.2重量部 球状溶融シリカ 66.6重量部 酸化マイクロクリスタリンワックス(融点92℃) 0.2重量部 酸化ポリエチレンワックス(融点96℃) 0.2重量部 カルナバワックス 0.3重量部 2,6-ジターシャリーブチル-p-クレゾール 0.1重量部 カーボンブラック 0.3重量部 をミキサーを用いて各成分を混合した後、表面温度が9
5℃と25℃の2軸ロールを用いて20回混練して得ら
れた混練物シートを冷却後粉砕した4メッシュ以下の粉
砕物99.4重量部に、組成物2の16メッシュ以下の
粒度の酸化マイクロクリスタリンワックスのウレタン化
物0.6重量部を配合混合後タブレット化した。得られ
た樹脂組成物の特性を以下の方法で評価した。評価結果
を表1に示す。
The present invention will be specifically described below with reference to examples.
The mixing ratio is by weight. Example 1 Composition 1 Orthocresol novolak type epoxy resin 21.4 parts by weight Phenol novolak resin 10.1 parts by weight 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) 0.2 Parts by weight Spherical fused silica 66.6 parts by weight Oxidized microcrystalline wax (melting point 92 ° C) 0.2 parts by weight Oxidized polyethylene wax (melting point 96 ° C) 0.2 parts by weight Carnauba wax 0.3 parts by weight 2,6-ditertiary After mixing each component with 0.1 part by weight of butyl-p-cresol and 0.3 part by weight of carbon black using a mixer, the surface temperature was 9%.
A kneaded material sheet obtained by kneading 20 times using a biaxial roll at 5 ° C. and 25 ° C. was cooled and pulverized. 0.6 part by weight of a urethane compound of oxidized microcrystalline wax was mixed and tabletted. The properties of the obtained resin composition were evaluated by the following methods. Table 1 shows the evaluation results.

【0018】評価方法 スパイラルフロー:EMMI−1−66に準じたスパイ
ラルフロー測定用の金型を用いて、金型温度175℃、
注入圧力70kg/cm2、硬化時間2分で測定した。
単位はcm。 離型回復性:金型表面をクリーニングするためのメラミ
ン樹脂系クリーニング材を用いて、離型時荷重評価用金
型で成形品を成形し、前記金型の表面の離型剤成分を取
り除いた後、金型離型回復樹脂組成物を3回成形した
後、金型温度175℃、注入圧力70kg/cm2、硬
化時間2分で評価用材料をトランスファー成形し、製品
抜き出し時の離型荷重を測定した。離型時荷重評価用金
型は、上型・中型・下型とからなり、成形後に中型に付
着した14mmΦで1.5mm厚の円形の成形品に、中
型の上部の穴からプッシュブルゲージを当て、成形品を
突き出した際にかかる荷重を測定した。評価用材料とし
ては、住友ベークライト(株)製・半導体封止用エポキ
シ成形材料EME−7351を用いた。 離型持続性:離型時荷重評価用金型で成形品を成形し、
前記金型の表面の離型剤成分を取り除いた後、金型離型
回復樹脂組成物を3回成形した後、金型温度175℃、
注入圧力70kg/cm2、硬化時間2分で評価用材料
をトランスファー成形し、製品抜き出し時の離型荷重を
測定した。離型荷重は、上型・中型・下型とからなる離
型時荷重評価用金型を用いて成形し、成形後に中型に付
着した14.5mmΦで1.5mm厚の円形の成形品
に、中型の上部の穴からプッシュブルゲージを当て、成
形品を突き出した際にかかる荷重とした。続けて評価用
材料を200ショット成形し、離型荷重のショットごと
の変化を測定した。このとき初期の離型荷重に対して3
0%以上離型荷重が増大したショット数で表現した。2
00<は、200ショット以上で初期の離型荷重に対し
て30%以下の離型荷重であることを表現したものであ
る。 製品汚れ:金型離型回復樹脂組成物の使用直後に成形し
た評価用材料の成形品表面の油浮きと汚れ具合を確認し
た。表面を拭いた時に拭き取れるものは油浮き、取れな
いものは汚れと判定した。製品表面に汚れが発生したも
のは×、汚れはないが油浮きがあるものを△、いずれも
ないものは○と表現した。
Evaluation method Spiral flow: Using a mold for measuring spiral flow according to EMMI-1-66, a mold temperature of 175 ° C.
The measurement was performed at an injection pressure of 70 kg / cm 2 and a curing time of 2 minutes.
The unit is cm. Mold release property: A molded product was molded with a mold for load evaluation at the time of mold release using a melamine resin-based cleaning material for cleaning the mold surface, and the mold release agent component on the surface of the mold was removed. Then, after the mold release recovery resin composition was molded three times, the evaluation material was transfer molded at a mold temperature of 175 ° C., an injection pressure of 70 kg / cm 2 , and a curing time of 2 minutes, and the mold release load at the time of product withdrawal Was measured. The mold for load evaluation at the time of mold release consists of an upper mold, a middle mold and a lower mold. A 14 mmΦ 1.5 mm thick circular molded product adhered to the middle mold after molding, and a push bull gauge is inserted through the upper hole of the middle mold. Then, the load applied when the molded product was pushed out was measured. As an evaluation material, an epoxy molding material EME-7351 for semiconductor encapsulation manufactured by Sumitomo Bakelite Co., Ltd. was used. Mold release durability: Molded products are molded with a mold for load evaluation at mold release,
After removing the release agent component from the surface of the mold, the mold release recovery resin composition was molded three times, and then the mold temperature was 175 ° C.
The material for evaluation was transfer-molded at an injection pressure of 70 kg / cm 2 and a curing time of 2 minutes, and the release load at the time of extracting the product was measured. The mold release load is formed using a mold for load evaluation at the time of mold release consisting of an upper mold, a middle mold, and a lower mold, and is formed into a circular molded article having a thickness of 14.5 mmΦ and a thickness of 1.5 mm attached to the middle mold after molding. A push bull gauge was applied from the upper hole of the middle mold to determine the load applied when the molded product was protruded. Subsequently, 200 shots of the evaluation material were formed, and the change in the release load for each shot was measured. At this time, 3
Expressed as the number of shots in which the release load increased by 0% or more. 2
00 <expresses that the release load is 30% or less of the initial release load in 200 shots or more. Product stain: Oil floating and stain condition on the molded product surface of the evaluation material molded immediately after the use of the mold release recovery resin composition were confirmed. Those that could be wiped off when the surface was wiped were judged to be oily, and those that could not be removed were judged to be dirty. When the surface of the product was stained, x was shown, when there was no stain, but oil was floating, and when none was found, it was expressed as o.

【0019】実施例2〜5、比較例1〜5 表1、表2の配合に従い、実施例1同様の組成物を得
た。実施例4、5、比較例4、5で用いたビフェニル型
エポキシ樹脂は、融点105℃、エポキシ当量195で
ある。実施例4、5、比較例4,5で用いたフェノール
アラルキル樹脂は、軟化点72℃、水酸基当量165で
ある。実施例2、5のワックス1は酸化マイクロクリス
タリンワックスと酸化ポリエチレンワックスの混合物の
トルエンジイソシアネート変性品(融点89、酸価1
6、鹸化価60) 実施例3のワックス2は、酸化マイクロクリスタリンワ
ックスと酸化ポリエチレンワックスの混合物のトルエン
ジイソシアネート変性品(融点82、酸化18、鹸化価
50) 比較例1、4のマイクロクリスタリンワックスは、融点
90℃。比較例1、2のポリエチレンワックスは、融点
92℃。比較例3の酸化ポリエチレンワックスの融点は
96℃である。
Examples 2 to 5, Comparative Examples 1 to 5 According to the formulations shown in Tables 1 and 2, the same compositions as in Example 1 were obtained. The biphenyl type epoxy resins used in Examples 4 and 5 and Comparative Examples 4 and 5 have a melting point of 105 ° C. and an epoxy equivalent of 195. The phenol aralkyl resins used in Examples 4 and 5 and Comparative Examples 4 and 5 have a softening point of 72 ° C. and a hydroxyl equivalent of 165. Wax 1 of Examples 2 and 5 was a mixture of oxidized microcrystalline wax and polyethylene oxide modified with toluene diisocyanate (melting point 89, acid value 1)
6, saponification value 60) The wax 2 of Example 3 is a toluene diisocyanate-modified product of a mixture of oxidized microcrystalline wax and polyethylene oxide (melting point 82, oxidized 18, saponification value 50). Mp 90 ° C. The melting points of the polyethylene waxes of Comparative Examples 1 and 2 were 92 ° C. The melting point of the oxidized polyethylene wax of Comparative Example 3 is 96 ° C.

【0020】[0020]

【表1】 [Table 1]

【0021】[0021]

【表2】 [Table 2]

【0022】[0022]

【発明の効果】本発明の製造方法で得られた半導体封止
用金型離型回復樹脂組成物を用いた後に、成形された半
導体装置には油浮きや汚れがなく、離型回復性に優れて
おり、更に離型性を長く維持することができるので生産
性向上に寄与する。
After using the mold release recovery resin composition for semiconductor encapsulation obtained by the manufacturing method of the present invention, the molded semiconductor device is free from oil floating and dirt, and has good mold release recovery. It is excellent and can maintain the releasability for a long time, contributing to an improvement in productivity.

フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) C08K 5/00 C08K 5/00 C08L 91/06 C08L 91/06 H01L 23/29 B29K 61:04 23/31 63:00 // B29K 61:04 105:16 63:00 H01L 23/30 R 105:16 Fターム(参考) 4F070 AA44 AA46 AA53 AA63 AC23 AC37 AC43 AC50 AC55 AC94 AE01 AE03 AE17 DA41 FA11 FA17 FB07 FB09 4F202 AA37 AA39 AB03 AB06 AB16 AH37 CA11 CB01 CM41 CM45 CM62 CM82 CM90 4J002 AE033 AE034 AE035 CC03X CC04X CC05X CD02W CD04W CD05W CD06W CD13W CE00X CK024 CK025 DJ018 EE056 EH076 EJ016 EJ026 EN027 EU097 EU117 EV066 EW017 EY017 FD018 FD076 FD090 FD14X FD157 FD160 GQ05 4J036 AC02 AC08 AC18 AD07 AD08 AD10 AE05 AJ01 DC05 DC41 DC46 DD07 DD09 FA05 FA10 FA12 FB02 FB07 FB18 JA07 KA06 4M109 AA01 CA21 EA02 EB03 EB04 EB06 EB08 EB09 EB13 EB18 EC20 Continuation of the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) C08K 5/00 C08K 5/00 C08L 91/06 C08L 91/06 H01L 23/29 B29K 61:04 23/31 63:00 // B29K 61:04 105: 16 63:00 H01L 23/30 R 105: 16 F term (reference) 4F070 AA44 AA46 AA53 AA63 AC23 AC37 AC43 AC50 AC55 AC94 AE01 AE03 AE17 DA41 FA11 FA17 FB07 FB09 4F202 AA37 AA39 AB03 AB06 AB16 AH37 CA11 CB01 CM41 CM45 CM62 CM82 CM90 4J002 AE033 AE034 AE035 CC03X CC04X CC05X CD02W CD04W CD05W CD06W CD13W CE00X CK024 CK025 DJ018 EE056 EH076 EJ016 EJ026 EN027 EU007 AC117 FD017 FD017 EF017 FD017 EF017 FD017 FD017 FD017 DC05 DC41 DC46 DD07 DD09 FA05 FA10 FA12 FB02 FB07 FB18 JA07 KA06 4M109 AA01 CA21 EA02 EB03 EB04 EB06 EB08 EB09 EB13 EB18 EC20

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】(A)エポキシ樹脂、(B)フェノール樹
脂、(C)硬化促進剤、(D1)酸化マイクロクリスタ
リンワックスと酸化ポリエチレンワックス及び/又は酸
化マイクロクリスタリンワックスと酸化ポリエチレンワ
ックスのウレタン化物、(E)酸化防止剤、及び(F)
無機充填材を必須成分とし、前記各成分を加熱混練冷却
後4メッシュ以下の粉砕物とし、前記粉砕物に(D2)
酸化マイクロクリスタリンワックスと酸化ポリエチレン
ワックス及び/又は酸化マイクロクリスタリンワックス
と酸化ポリエチレンワックスのウレタン化物を添加混合
して得られる金型離型回復樹脂組成物であって、その配
合割合[(D1)+(D2)]が全樹脂組成物中の0.
1〜2重量%、[(D2)]/[(D1)+(D2)]
≧25重量%で、(D2)の粒度が16メッシュ以下で
あることを特徴とする半導体封止用金型離型回復樹脂組
成物の製造方法。
(A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D1) a urethane compound of oxidized microcrystalline wax and polyethylene oxide and / or oxidized microcrystalline wax and polyethylene oxide wax, (E) an antioxidant, and (F)
An inorganic filler is an essential component, and the above components are heated, kneaded and cooled to form a pulverized product of 4 mesh or less.
A mold release recovery resin composition obtained by adding and mixing an oxidized microcrystalline wax and a polyethylene oxide wax and / or a urethane compound of an oxidized microcrystalline wax and a polyethylene oxide wax, wherein the compounding ratio [(D1) + ( D2)] in all the resin compositions.
1-2% by weight, [(D2)] / [(D1) + (D2)]
≧ 25% by weight, and the particle size of (D2) is 16 mesh or less.
JP2000359940A 2000-11-27 2000-11-27 Method for producing mold release recovery resin composition Expired - Fee Related JP4788033B2 (en)

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Publication number Priority date Publication date Assignee Title
JP2002249549A (en) * 2001-02-26 2002-09-06 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2002249550A (en) * 2001-02-26 2002-09-06 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2005281583A (en) * 2004-03-30 2005-10-13 Sumitomo Bakelite Co Ltd Mold release restoring resin composition and method for producing semiconductor device
JP2005281580A (en) * 2004-03-30 2005-10-13 Sumitomo Bakelite Co Ltd Mold release restoring resin composition and method for producing semiconductor device
JP2006219543A (en) * 2005-02-08 2006-08-24 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
CN103448168A (en) * 2013-09-02 2013-12-18 湖北三江航天红阳机电有限公司 Method for de-molding particle-reinforced and fiber-reinforced double-element composite material
JP2013253148A (en) * 2012-06-06 2013-12-19 Panasonic Corp Phenolic resin molding material and molding using the same

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JPH0873703A (en) * 1994-09-01 1996-03-19 Hitachi Chem Co Ltd Epoxy resin composition and optical semiconductor device produced using the composition
JP2000281750A (en) * 1999-03-31 2000-10-10 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2002161189A (en) * 2000-11-27 2002-06-04 Sumitomo Bakelite Co Ltd Resin composition for recovering mold releasability

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JPH05152465A (en) * 1991-12-02 1993-06-18 Hitachi Ltd Resin composition for sealing semiconductor
JPH07309998A (en) * 1994-05-18 1995-11-28 Hitachi Chem Co Ltd Mold surface release treatment resin composition, release treatment of surface of mold using the composition, production of thermosetting resin molded product using mold release-treated with the composition
JPH0873703A (en) * 1994-09-01 1996-03-19 Hitachi Chem Co Ltd Epoxy resin composition and optical semiconductor device produced using the composition
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002249549A (en) * 2001-02-26 2002-09-06 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2002249550A (en) * 2001-02-26 2002-09-06 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
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JP4538972B2 (en) * 2001-02-26 2010-09-08 住友ベークライト株式会社 Epoxy resin composition and semiconductor device
JP2005281583A (en) * 2004-03-30 2005-10-13 Sumitomo Bakelite Co Ltd Mold release restoring resin composition and method for producing semiconductor device
JP2005281580A (en) * 2004-03-30 2005-10-13 Sumitomo Bakelite Co Ltd Mold release restoring resin composition and method for producing semiconductor device
JP4581455B2 (en) * 2004-03-30 2010-11-17 住友ベークライト株式会社 Mold release recovery resin composition and method for manufacturing semiconductor device
JP4590899B2 (en) * 2004-03-30 2010-12-01 住友ベークライト株式会社 Mold release recovery resin composition and method for manufacturing semiconductor device
JP2006219543A (en) * 2005-02-08 2006-08-24 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2013253148A (en) * 2012-06-06 2013-12-19 Panasonic Corp Phenolic resin molding material and molding using the same
CN103448168A (en) * 2013-09-02 2013-12-18 湖北三江航天红阳机电有限公司 Method for de-molding particle-reinforced and fiber-reinforced double-element composite material

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