KR100358232B1 - Epoxy Resin Compositions for Semiconductor Device Encapsulation - Google Patents
Epoxy Resin Compositions for Semiconductor Device Encapsulation Download PDFInfo
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- KR100358232B1 KR100358232B1 KR10-1998-0039657A KR19980039657A KR100358232B1 KR 100358232 B1 KR100358232 B1 KR 100358232B1 KR 19980039657 A KR19980039657 A KR 19980039657A KR 100358232 B1 KR100358232 B1 KR 100358232B1
- Authority
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- South Korea
- Prior art keywords
- epoxy resin
- resin composition
- curing agent
- resin
- group
- Prior art date
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 34
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 34
- 239000000203 mixture Substances 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000005538 encapsulation Methods 0.000 title claims abstract description 14
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 31
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 7
- 239000005011 phenolic resin Substances 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 6
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 6
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims abstract description 4
- RZTDESRVPFKCBH-UHFFFAOYSA-N 1-methyl-4-(4-methylphenyl)benzene Chemical group C1=CC(C)=CC=C1C1=CC=C(C)C=C1 RZTDESRVPFKCBH-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229940087305 limonene Drugs 0.000 claims abstract description 3
- 235000001510 limonene Nutrition 0.000 claims abstract description 3
- NNJVILVZKWQKPM-UHFFFAOYSA-N Lidocaine Chemical compound CCN(CC)CC(=O)NC1=C(C)C=CC=C1C NNJVILVZKWQKPM-UHFFFAOYSA-N 0.000 claims abstract 2
- 229920005989 resin Polymers 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 26
- 229920003986 novolac Polymers 0.000 claims description 14
- 239000011256 inorganic filler Substances 0.000 claims description 11
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 11
- 239000003086 colorant Substances 0.000 claims description 9
- 239000007822 coupling agent Substances 0.000 claims description 8
- 239000003063 flame retardant Substances 0.000 claims description 8
- 239000004014 plasticizer Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- -1 curing accelerators Substances 0.000 claims description 6
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000006082 mold release agent Substances 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 239000012796 inorganic flame retardant Substances 0.000 description 8
- 235000010290 biphenyl Nutrition 0.000 description 7
- 239000004305 biphenyl Substances 0.000 description 7
- 239000008393 encapsulating agent Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 239000004843 novolac epoxy resin Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000003721 gunpowder Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- PDZGUDFYWJIFLV-PPHPATTJSA-N (4r)-1-methyl-4-prop-1-en-2-ylcyclohexene;phenol Chemical compound OC1=CC=CC=C1.CC(=C)[C@@H]1CCC(C)=CC1 PDZGUDFYWJIFLV-PPHPATTJSA-N 0.000 description 1
- JRQJLSWAMYZFGP-UHFFFAOYSA-N 1,1'-biphenyl;phenol Chemical group OC1=CC=CC=C1.C1=CC=CC=C1C1=CC=CC=C1 JRQJLSWAMYZFGP-UHFFFAOYSA-N 0.000 description 1
- SSUJUUNLZQVZMO-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine Chemical compound C1CCC=CN2CCCNC21 SSUJUUNLZQVZMO-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 101001110286 Homo sapiens Ras-related C3 botulinum toxin substrate 1 Proteins 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 102100022122 Ras-related C3 botulinum toxin substrate 1 Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Chemical class 0.000 description 1
- 229910052751 metal Chemical class 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N p-dimethylbenzene Natural products CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
본 발명은 반도체 소자 봉지용 에폭시 수지 조성물에 관한 것으로서, 에폭시 수지 및 경화제로서 하기의 화학식 1로 나타내어지는 페놀 수지를 포함하는 반도체 소자 봉지용 에폭시 수지 조성물은 기존의 반도체 봉지용 에폭시 수지 조성물에 비하여 성형성이 뛰어나며 실장시 내크랙성이 우수하여 패키징 양산성이 우수하고, 고밀도 표면 실장형 패키지 봉지에 높은 신뢰성을 나타낸다.The present invention relates to an epoxy resin composition for semiconductor element encapsulation, wherein an epoxy resin composition for semiconductor element encapsulation comprising an epoxy resin and a phenol resin represented by the following Formula 1 as a curing agent is molded in comparison with the conventional epoxy resin composition for semiconductor encapsulation. It has excellent properties and excellent crack resistance at the time of packaging, so it is excellent in mass production of packaging and shows high reliability in high-density surface-mount package bags.
[화학식 1][Formula 1]
상기 식에서, n은 1 내지 10의 정수이고, R1은 수소 원자, 탄소수 1 내지 5의 알킬기 또는 페닐기이고, R2는 수소 원자, 탄소수 1 내지 5의 알킬기, 페닐기 또는 리모넨이고, R3는 메틸, 디시클로펜타디엔, 자일린 또는 디메틸바이페닐이며, R1, R2가 각각 수소원자일 때, R3는 메틸이 아니다.Wherein n is an integer of 1 to 10, R 1 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a phenyl group, R 2 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group or limonene, and R 3 is methyl , Dicyclopentadiene, xyline or dimethylbiphenyl and when R 1 and R 2 are each hydrogen atoms, R 3 is not methyl.
Description
[산업상 이용분야][Industrial use]
본 발명은 반도체 소자 봉지용 에폭시 수지 조성물에 관한 것으로서, 더욱 상세하게는 변성 경화제를 사용함으로써 성형성이 우수하고 실장시 내크랙성이 개선된 반도체 소자 봉지용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for semiconductor element encapsulation, and more particularly, to an epoxy resin composition for semiconductor element encapsulation having excellent moldability and improved crack resistance upon mounting by using a modified curing agent.
[종래 기술][Prior art]
최근에 전자제품들의 개발동향은 초박형화, 초소형화 추세에 있으며, 이에 따라 전자제품에 사용되는 반도체에 대해서도 초박형의 기술이 요구되고 있다. 따라서 반도체를 보호하기 위한 봉지재의 두께도 얇아져야 하는데, 봉지재의 두께가 얇아지면 봉지재가 반도체 조립 공정에서 받을 수 있는 여러 조건에 대한 저항력이 저하되는 문제가 발생한다. 이러한 문제점을 해결하기 위해서 우수한 기계적 강도, 뛰어난 접착력 및 저흡습성을 가진 새로운 봉지재가 요구되고 있다.Recently, development trends of electronic products have been in the trend of ultra-thin and ultra-miniaturized, and accordingly, ultra-thin technologies are required for semiconductors used in electronic products. Therefore, the thickness of the encapsulation material for protecting the semiconductor should also be thin. However, when the thickness of the encapsulation material is thin, a problem arises in that the encapsulation material is resistant to various conditions that may be received in the semiconductor assembly process. In order to solve this problem, a new encapsulant having excellent mechanical strength, excellent adhesion and low hygroscopicity is required.
반도체 봉지재로는 주로 에폭시 수지가 사용되며, 최근에는 상기한 요구에 부응하기 위하여 저점도 수지인 바이페닐 수지를 많이 사용하고 있다. 바이페닐 수지는 기존의 노볼락계 수지에 비하여 점도가 매우 낮아 충전제를 많이 첨가할 수 있으므로 기계적 강도를 높일 수 있고, 수분 흡수율을 낮출 수 있으며, 저점도 특성인 계면에서의 웨팅(wetting)이 좋아져 접착력을 향상시킬 수 있다는 장점이 있다.An epoxy resin is mainly used as a semiconductor sealing material, and in recent years, biphenyl resin which is a low viscosity resin is used a lot in order to satisfy the said request | requirement. Biphenyl resin has a very low viscosity compared to the conventional novolak-based resin, so that many fillers can be added, thereby increasing mechanical strength, lowering water absorption rate, and better wetting at an interface having low viscosity. There is an advantage that the adhesion can be improved.
반면에 바이페닐 수지는 적용에 있어 여러 가지 문제점이 있다. 바이페닐 수지는 용융 점도는 낮지만 결정화 구조를 갖고 있기 때문에 연화점이 104 ℃로 매우 높다. 하지만 경화제나 기타 첨가 수지와 혼합할 경우에는 더 이상 결정화 구조를 갖지 못하여 연화점이 급격히 떨어지게 된다. 이러한 연화점 저하로 인하여 봉지재 양산시 들러붙는 현상(Blocking 및 Caking)이 발생하며, 이러한 현상을 억제하기 위해서는 양산 라인을 낮은 온도로 유지하여야 한다. 또한 낮은 연화점은 봉지재의 저장 안정성에 영향을 미치게 되어, 노볼락 수지를 사용한 봉지재의 경우에는 상온에서 3일 이상을 사용할 수 있는 반면에 바이페닐 수지를 사용한 봉지재의 경우에는 하루 이내에 사용하지 않으면 점도 상승으로 인한 성형성 불량을 야기할 수 있다. 한편 반도체 작업성 측면에서 바이페닐 수지와 같은 저점도 수지는 금형과의 접착력이 좋아 이형성이 매우 나쁘기 때문에 원활한 작업을 위하여 금형의 세정(cleaning)을 자주 해주어야 하고, 이러한 이유로 반도체 패키지 양산성이 저하되는 것이 큰 문제로 대두되고 있다.On the other hand, biphenyl resins have various problems in application. The biphenyl resin has a low melt viscosity but has a crystallized structure, so the softening point is very high at 104 ° C. However, when mixed with a curing agent or other additive resin, it no longer has a crystallization structure, and the softening point drops sharply. Due to the softening point decrease, sticking phenomenon (blocking and caking) occurs during mass production of encapsulant. In order to suppress such phenomenon, mass production line should be maintained at low temperature. In addition, the low softening point affects the storage stability of the encapsulant. In the case of the encapsulant using the novolak resin, it can be used for 3 days or more at room temperature, while in the case of the encapsulant using the biphenyl resin, the viscosity increases if not used within one day. Can cause moldability defects. On the other hand, in terms of semiconductor workability, low viscosity resins such as biphenyl resins have good adhesion to molds and have very poor mold release properties. Therefore, the molds should be cleaned frequently for smooth operation. Is a big problem.
본 발명은 상기와 같은 문제점을 해결하기 위한 것으로서, 본 발명은 내크랙성이 우수하고 성형성이 뛰어나 패키징 양산성이 우수하며 반도체 소자의 표면 실장시 높은 신뢰성을 확보할 수 있는 에폭시 수지 조성물을 제공하는 것을 목적으로 한다.The present invention is to solve the above problems, the present invention provides an epoxy resin composition that is excellent in crack resistance, excellent moldability, excellent packaging mass production, and can ensure high reliability when mounting the surface of the semiconductor device It aims to do it.
[과제를 해결하기 위한 수단][Means for solving the problem]
상기한 목적을 달성하기 위하여 본 발명은 경화제로서 하기의 화학식 1로 나타내어지는 페놀 수지를 포함하는 반도체 소자 봉지용 에폭시 수지 조성물을 제공한다.In order to achieve the above object, the present invention provides an epoxy resin composition for sealing a semiconductor device comprising a phenol resin represented by the following formula (1) as a curing agent.
[화학식 1][Formula 1]
상기 식에서, n은 1 내지 10의 정수이고, R1은 수소 원자, 탄소수 1 내지 5의 알킬기 또는 페닐기이고, R2는 수소 원자, 탄소수 1 내지 5의 알킬기, 페닐기 또는 리모넨(limonene)이고, R3는 메틸, 디시클로펜타디엔, 자일린(xylene) 또는 디메틸바이페닐이며, R1, R2가 각각 수소원자일 때, R3는 메틸이 아니다.Wherein n is an integer of 1 to 10, R 1 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a phenyl group, R 2 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group or limonene, and R is 3 is methyl, dicyclopentadiene, xylene or dimethylbiphenyl, and when R 1 and R 2 are each hydrogen atoms, R 3 is not methyl.
이하 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
본 발명의 에폭시 수지 조성물은 경화제로서 하기의 화학식 1의 페놀수지를 일정 중량부 이상 혼합하여 사용함으로써 내크랙성을 향상시키는 것을 특징으로 한다.The epoxy resin composition of the present invention is characterized by improving the crack resistance by using a phenol resin of the formula (1) below as a curing agent by mixing a predetermined weight part or more.
[화학식 1][Formula 1]
상기 식에서 n, R1, R2및 R3는 상기에서 정의한 바와 동일하다.Wherein n, R 1 , R 2 and R 3 are the same as defined above.
본 발명의 에폭시 수지 조성물은 기본 수지에 화학식 1의 경화제를 포함하며, 필요에 따라서 무기 충전제, 커플링제, 경화 촉진제, 가소제, 특수 첨가제, 유기/무기 난연제, 이형제, 착색제 등을 추가로 포함할 수 있다. 본 발명의 조성물에 추가로 포함될 수 있는 각 성분의 함유량의 대표적인 예를 하기 표 1에 나타내었다.The epoxy resin composition of the present invention includes a curing agent of Formula 1 in the base resin, and may further include an inorganic filler, a coupling agent, a curing accelerator, a plasticizer, a special additive, an organic / inorganic flame retardant, a mold releasing agent, a coloring agent, and the like as necessary. have. Representative examples of the content of each component that may be further included in the composition of the present invention are shown in Table 1 below.
본 발명에 사용되는 에폭시 수지는 오르토크레졸 노볼락 수지이며, 바이페닐이나 나프탈렌기가 도입된 에폭시 수지를 혼합하여 사용할 수 있다. 단, 단독 또는 혼합된 수지의 연화점이 50 ℃ 이상이고, 150 ℃에서 점도가 0.5 포이즈(Poise) 이상인 수지를 사용한다. 수지의 연화점이 50 ℃ 이하이거나 점도가 0.5 포이즈 이하일 경우에는 봉지재의 양산성 및 저장 안정성이 떨어진다. 이때 점도는 ICI 콘 앤 플레이트 비스코미터(ICI cone & plate viscometer)로 측정한 ICI 점도를 기준으로 할 수 있다.The epoxy resin used for this invention is an orthocresol novolak resin, It can use by mixing the epoxy resin in which biphenyl and the naphthalene group were introduce | transduced. However, the softening point of single or mixed resin is 50 degreeC or more, and the resin whose viscosity is 0.5 poise or more at 150 degreeC is used. When the softening point of the resin is 50 ° C. or less or the viscosity is 0.5 poise or less, the mass productivity and storage stability of the encapsulant are inferior. In this case, the viscosity may be based on the ICI viscosity measured by the ICI cone & plate viscometer (ICI cone & plate viscometer).
본 발명은 이와 같이 고점도의 노볼락 수지를 사용하면서 변성 경화제를 첨가하여 신뢰성을 향상시킬 수 있으므로, 저점도 수지를 사용할 때 발생할 수 있는 성형성 불량, 이형성 저하 및 패키지 양산성 저하 등의 문제를 해결할 수 있다.The present invention can improve the reliability by adding a modified curing agent while using a high-viscosity novolak resin, thereby solving problems such as poor moldability, lower mold release properties, and lower package yield that may occur when using low viscosity resins. Can be.
본 발명에 사용되는 무기 충전제로는 반도체 봉지용 에폭시 수지에 통상적으로 사용되고 있는 용융실리카, 결정실리카, 알루미나, 규산칼슘 등을 사용할 수 있으며, 그 중에서 용융실리카 분말과 결정 실리카 분말이 경제성, 고밀도, 선팽창계수 측면에서 가장 바람직하다. 무기 충전제의 형상은 각상과 구상을 유동성과 신뢰성을 고려해서 적절히 선택하여 사용하며, 각상의 경우에는 반도체 칩에 미치는 국소응력을 방지하기 위하여 75 ㎛ 이상의 것을 1.0 중량부 이하로 제한하여 사용한다. 충전제의 배합량은 에폭시 수지, 경화제 및 무기 충전제의 종류에 따라 달라지나, 트랜스퍼 성형 공정에 적용하기 위하여 전체 조성물에 대하여 65∼87 중량부를 사용하는 것이 바람직하다. 충전제의 양이 65 중량부 미만일 경우에는 열팽창이 커져서 내열성, 내크랙성 및 내습성 등의 물성이 저하되며, 87 중량부를 초과하여 사용하면 유동성이 저하되어 반도체 소자와 리드 프레임을 연결하는 본드 와이어의 휨이나 절단이 발생하고, 더욱 심한 경우에는 밀봉이 불가능하게 된다.As the inorganic filler used in the present invention, fused silica, crystalline silica, alumina, calcium silicate, and the like, which are commonly used in epoxy resins for semiconductor encapsulation, may be used. Among them, fused silica powder and crystalline silica powder are economical, high density, and linear expansion. Most preferred in terms of coefficient. The shape of the inorganic filler is appropriately selected and used in consideration of the fluidity and reliability of each phase and spherical shape, in the case of each phase is limited to 1.0 parts by weight or less to 75 ㎛ or more in order to prevent local stress on the semiconductor chip. Although the compounding quantity of a filler changes with kinds of epoxy resin, a hardening | curing agent, and an inorganic filler, it is preferable to use 65-87 weight part with respect to the whole composition, in order to apply to a transfer molding process. When the amount of the filler is less than 65 parts by weight, thermal expansion is increased, and physical properties such as heat resistance, crack resistance, and moisture resistance are reduced. Warping or cutting occurs and, in more severe cases, sealing is impossible.
무기 충전제의 표면 처리에 사용되는 커플링제는 메틸, 에폭시, 머캡토, 비닐 및 아민 관능기를 갖는 실란계 커플링제를 단독 또는 혼용하여 사용할 수 있고, 그 사용량은 0.1∼1 중량부가 적합하다.The coupling agent used for the surface treatment of an inorganic filler can be used individually or in combination with the silane coupling agent which has methyl, an epoxy, a mercapto, a vinyl, and an amine functional group, The usage-amount is suitable 0.1-1 weight part.
또한, 본 발명에서는 에폭시 수지와 경화제의 반응을 촉진하기 위하여 경화 촉진제를 배합하는 것이 바람직하다. 경화 촉진제로는 이미다졸화합물, 1,8-디아자비시클로(5,4,0)운데센(DBU) 등의 시클로아미딘 유도체와 트리페닐포스핀, 메틸디페닐포스핀 등의 유도체, 3급 아민 등을 사용할 수 있으며, 경화 촉진제의 사용량은 0.05∼1.0 중량부를 사용하는 것이 바람직하다.Moreover, in this invention, in order to accelerate reaction of an epoxy resin and a hardening | curing agent, it is preferable to mix | blend a hardening accelerator. Examples of the curing accelerator include imidazole compounds, cycloamidine derivatives such as 1,8-diazabicyclo (5,4,0) undecene (DBU), derivatives such as triphenylphosphine and methyldiphenylphosphine, and tertiary Amines etc. can be used and it is preferable to use 0.05-1.0 weight part of hardening accelerators.
본 발명에서 사용될 수 있는 가소제는 실리콘계 화합물로서 예를 들면 에폭시기, 아민기, 비닐기, 카르복실기, 수산기, 히드록실기 등을 갖는 실리콘오일, 실리콘고무 또는 이들 실리콘계 화합물과 페놀 노볼락, 노볼락 에폭시 수지 등의 유기 중합체와의 공중합체를 사용할 수 있고 그 사용량은 0.05∼3 중량부가 적합하다.The plasticizer which can be used in the present invention is a silicone-based compound, for example, a silicone oil, an silicone group having an epoxy group, an amine group, a vinyl group, a carboxyl group, a hydroxyl group, a hydroxyl group, or the like, or a silicone-based compound and a phenol novolac or novolac epoxy resin. The copolymer with organic polymers, such as these, can be used and its usage-amount is suitable for 0.05-3 weight part.
난연제는 유기난연제와 무기난연제로 나눌 수 있는데, 유기난연제는 브롬화 노볼락 에폭시 수지, 브롬화 비스페놀 에폭시 수지 등을 사용할 수 있으며, 무기난연제로는 안티몬 옥사이드 화합물을 사용할 수 있다. 난연제의 사용량은 유기난연제와 무기난연제 각각 0.2∼3 중량부가 적합하다.Flame retardants can be divided into organic flame retardants and inorganic flame retardants, organic flame retardants may be used such as brominated novolac epoxy resin, brominated bisphenol epoxy resin, antimony oxide compound may be used as inorganic flame retardant. The amount of the flame retardant is suitably 0.2 to 3 parts by weight of the organic and inorganic flame retardants, respectively.
이형제는 천연왁스, 합성왁스, 고급 지방산과 금속염류, 산아마이드 에스테르와 파라핀 등을 단독 또는 혼합하여 사용하고 0.1∼3 중량부가 적합하다.The release agent may be natural wax, synthetic wax, higher fatty acids and metal salts, acid amide ester, paraffin, or the like, alone or in combination, and 0.1 to 3 parts by weight is suitable.
착색제는 카본 블랙이 사용될 수 있고 0.05∼1 중량부가 적합하다. 착색제의 양이 0.05 중량부 미만일 경우에는 레이저 마킹시 불량이 발생할 수 있고 원하는 색도를 얻을 수 없고, 1.0 중량부를 초과할 경우는 봉지재의 전기적 특성이 저하될 수 있다.Carbon black may be used as the colorant and 0.05 to 1 parts by weight is suitable. When the amount of the colorant is less than 0.05 parts by weight, defects may occur during laser marking, and the desired chromaticity may not be obtained. When the amount of the colorant exceeds 1.0 parts by weight, the electrical properties of the encapsulant may be deteriorated.
본 발명의 반도체 봉지용 에폭시 수지 성형재료는 필요로 하는 각 성분을 롤밀(Roll Mill)이나 니너(Kneader) 등의 혼합장치를 사용하여 균일하게 혼합하여 얻어지며, 구체적인 조합 방법에는 특별한 제한이 없으나, 바람직하기로는 가소제를 에폭시 수지나 페놀 수지에 고온에서 혼합하여 투입하는 것이 분산성을 향상시키기에 적당하며 무기 충전제인 실리카는 커플링제를 고속 믹서기 내에서 분무하여 표면 처리한 후 투입하는 것이 바람직하다.The epoxy resin molding material for semiconductor encapsulation of the present invention is obtained by uniformly mixing each component required using a mixing device such as a roll mill or a kneader, and there is no particular limitation on the specific combination method, Preferably, the plasticizer is mixed with epoxy resin or phenol resin at high temperature to be suitable for improving dispersibility, and silica, which is an inorganic filler, is preferably added after spraying the coupling agent in a high speed mixer and surface treatment.
[실시예]EXAMPLE
다음은 본 발명의 이해를 돕기 위하여 바람직한 실시예 및 비교예를 제시한다. 그러나 하기의 실시예는 본 발명을 보다 쉽게 이해하기 위하여 제공되는 것일 뿐 본 발명이 하기의 실시예에 한정되는 것은 아니다.The following presents preferred examples and comparative examples to aid in understanding the invention. However, the following examples are provided only to more easily understand the present invention, and the present invention is not limited to the following examples.
실시예 1-7Example 1-7
에폭시 수지, 유기난연제에 대하여 경화제, 무기 충전제, 커플링제, 경화 촉진제, 가소제, 무기난연제, 이형제 및 착색제를 각각 하기 표 2에 기재한 양만큼 첨가하여 에폭시 수지 조성물을 제조하였다.The epoxy resin composition was prepared by adding a curing agent, an inorganic filler, a coupling agent, a curing accelerator, a plasticizer, an inorganic flame retardant, a mold releasing agent, and a coloring agent in the amounts shown in Table 2, respectively.
비교예 1Comparative Example 1
하기 표 2에 기재한 성분을 표 2에 기재한 양만큼 첨가하여 에폭시 수지 조성물을 제조하였다.To the epoxy resin composition was prepared by adding the components shown in Table 2 in the amount described in Table 2.
* 에폭시 수지: 오르토크레졸 노볼락 에폭시 수지(EOCN-1020-65, 일본화약)* Epoxy Resin: Orthocresol Novolac Epoxy Resin (EOCN-1020-65, Nippon Gunpowder)
유기난연제: 브롬 노볼락 에폭시 수지(BREN-S, 일본화약)Organic flame retardant: Bromine novolac epoxy resin (BREN-S, Nippon Gunpowder)
경화제(1): 페놀 노볼락 수지(PSM-4261, 군영화학)Curing agent (1): Phenolic novolac resin (PSM-4261, Gunyoung Chemical)
경화제(2-a): 파라크레졸 노볼락 수지, 연화점 78 ℃, 수산기 당량 123Curing agent (2-a): paracresol novolac resin, softening point 78 deg. C, hydroxyl equivalent 123
경화제(2-b): 터셔리부틸페놀 노볼락 수지, 연화점 66 ℃, 수산기 당량 155Curing agent (2-b): tertiary butylphenol novolak resin, softening point 66 DEG C, hydroxyl equivalent 155
경화제(2-c): 디시클로펜타디엔 크레졸 노볼락 수지, 연화점 94 ℃, 수산기 당량 169Curing agent (2-c): dicyclopentadiene cresol novolak resin, softening point 94 ° C, hydroxyl equivalent 169
경화제(2-d): 파라자일렌 페놀 노볼락 수지, 연화점 69 ℃, 수산기 당량 173Curing agent (2-d): paraxylene phenol novolak resin, softening point 69 DEG C, hydroxyl group equivalent 173
경화제(2-e): 리모넨 페놀 노볼락 수지, 연화점 99 ℃, 수산기 당량 165Curing agent (2-e): limonene phenol novolak resin, softening point 99 ° C, hydroxyl equivalent 165
경화제(2-f): 페놀 비페닐 노볼락 수지, 연화점 73 ℃, 수산기 당량 198Curing agent (2-f): Phenol biphenyl novolak resin, softening point 73 deg. C, hydroxyl equivalent 198
무기충전제: 용융실리카 분말(평균입경이 30㎛인 구상과 평균입경이 5㎛인 각상을 7:3의 비율로 혼합)Inorganic filler: molten silica powder (mixing spherical particles having an average particle diameter of 30 µm and each phase having an average particle diameter of 5 µm in a ratio of 7: 3)
커플링제: 에폭시 실란 커플링제(S-510, 치소)Coupling Agent: Epoxy Silane Coupling Agent (S-510, Chiso)
경화 촉진제: 트리페닐 포스핀(HOKKO-TPP-EMC, 북흥화성)Curing accelerator: triphenyl phosphine (HOKKO-TPP-EMC, Heunghwa)
가소제: 디메틸실록산(KMP-598, 신에쯔)Plasticizer: Dimethylsiloxane (KMP-598, Shin-Etsu)
무기난연제: 삼산화 안티모니(RAC-1, 삼국제련)Inorganic flame retardant: antimony trioxide (RAC-1)
이형제: 카나우바 왁스(가등양행)Release Agent: Carnauba Wax
착색제: 카본 블랙(HS-100, 전기화학)Colorant: Carbon Black (HS-100, Electrochemical)
실시예 1-7 및 비교예에서 각 성분을 표 2에 나타낸 조성 및 조성비로 배합하여 헨셀 믹서로 혼합한 후 가열 롤 또는 니더에서 혼련시켜 분쇄하고 타정해 제품을 제조하였다. 이 결과로 얻어진 성형 재료를 이용하여 패키징한 후 하기한 방법에 따라 실험하였으며, 실험 결과를 표 3에 나타내었다. 본 실험에 사용된 시료 소자는 28p SOP 패키지이다.In Example 1-7 and the comparative example, each component was mix | blended with the composition and composition ratio shown in Table 2, it mixed with the Henschel mixer, it knead | mixed in a heating roll or kneader, it grind | pulverized, and compressed into the product. After packaging using the resulting molding material, the experiment was carried out according to the following method, and the experimental results are shown in Table 3. The sample device used in this experiment is a 28p SOP package.
본 발명에 적용된 실험 방법 및 조건은 다음과 같았다.Experimental methods and conditions applied to the present invention were as follows.
(1) 솔더 크랙 실험: 제작된 시료 소자를 고온 및 고습 조건(85 ℃/85 RH)에서 48 시간과 72 시간 동안 방치하고 260 ℃ 솔더 용기에 10 초 동안 담근 후 내/외부 크랙 발생수를 관찰하였다.(1) Solder crack test: The fabricated sample device was left for 48 hours and 72 hours in high temperature and high humidity conditions (85 ℃ / 85 RH) and immersed in a 260 ℃ solder container for 10 seconds and observed the number of internal and external cracks It was.
(2) 저장 안정성: 조성물을 25 ℃/40 RH 조건에서 보관하면서 시간에 따른 유동성 변화를 측정하여 초기 유동성의 90%까지를 사용 가능 시간으로 하였다. 유동성 측정방법은 EMMI-I-66에 의거하여 스파이럴 플로우 금형에서 트랜스퍼 성형기(압력=70 ㎏f/㎠, 온도=180 ℃, 경화시간=90 초)를 이용하여 가열 및 가압 후 조성물의 유동성을 측정하였다.(2) Storage Stability: The composition was stored at 25 ° C./40 RH, and the change in fluidity over time was measured to make up to 90% of the initial fluidity available. The flow measurement method is to measure the flowability of the composition after heating and pressurization using a transfer molding machine (pressure = 70 kgf / cm 2, temperature = 180 ° C., curing time = 90 seconds) in a spiral flow mold according to EMMI-I-66 It was.
(3) 연속 작업성: 반도체 시료 소자를 MPS(Multi Plunger System) 성형기로 연속적으로 성형하여 패키지 표면 또는 컬(Cull) 주위에 뜯김 현상이 발생하는 작업수를 측정하였다.(3) Continuous workability: The number of work pieces in which tearing occurred on the package surface or around the curl was measured by continuously forming a semiconductor sample device with a multiplier system (MPS) molding machine.
상기 표 3의 결과에서 보는 바와 같이, 경화제로 화학식 1의 페놀 수지를 포함하는 에폭시 수지 조성물은 연속 작업성 및 저장 안정성의 저하 없이 내솔더 크랙성이 현저히 향상되었다.As shown in the results of Table 3, the epoxy resin composition containing a phenol resin of the formula (1) as a curing agent significantly improved solder crack resistance without deterioration of continuous workability and storage stability.
본 발명의 에폭시 수지 조성물은 종래의 반도체 봉지용 에폭시 수지 조성물에 비하여 성형성이 뛰어나며 실장시 내크랙성이 우수하여 패키징 양산성이 우수하고, 고밀도 표면 실장형 패키지 봉지에 높은 신뢰성을 나타낸다.Compared with the conventional epoxy resin composition for semiconductor encapsulation, the epoxy resin composition of the present invention has excellent moldability, excellent crack resistance at the time of mounting, and excellent packaging mass productivity, and exhibits high reliability in high-density surface-mount package encapsulation.
Claims (4)
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| KR102238278B1 (en) | 2020-09-21 | 2021-04-23 | 주식회사 세기씨앤티 | Epoxy resin composition having high reliability and high transmittance |
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| KR102238278B1 (en) | 2020-09-21 | 2021-04-23 | 주식회사 세기씨앤티 | Epoxy resin composition having high reliability and high transmittance |
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