JP4765310B2 - Manufacturing method of resin-encapsulated semiconductor device - Google Patents
Manufacturing method of resin-encapsulated semiconductor device Download PDFInfo
- Publication number
- JP4765310B2 JP4765310B2 JP2004374502A JP2004374502A JP4765310B2 JP 4765310 B2 JP4765310 B2 JP 4765310B2 JP 2004374502 A JP2004374502 A JP 2004374502A JP 2004374502 A JP2004374502 A JP 2004374502A JP 4765310 B2 JP4765310 B2 JP 4765310B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- mold
- group
- resin composition
- epoxy resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 44
- 239000003822 epoxy resin Substances 0.000 claims description 43
- 239000011342 resin composition Substances 0.000 claims description 29
- 238000011084 recovery Methods 0.000 claims description 28
- 229920001296 polysiloxane Polymers 0.000 claims description 22
- 239000005011 phenolic resin Substances 0.000 claims description 20
- 238000000465 moulding Methods 0.000 claims description 18
- 238000005538 encapsulation Methods 0.000 claims description 14
- -1 hydroxylphenyl group Chemical group 0.000 claims description 11
- 239000011538 cleaning material Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000007795 chemical reaction product Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 125000003700 epoxy group Chemical group 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 125000000962 organic group Chemical group 0.000 claims description 4
- 239000011256 inorganic filler Substances 0.000 claims description 3
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000047 product Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 11
- 239000006082 mold release agent Substances 0.000 description 8
- 229920003986 novolac Polymers 0.000 description 8
- 238000007667 floating Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000004593 Epoxy Chemical class 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- 229920001342 Bakelite® Polymers 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 239000001993 wax Substances 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HCNHNBLSNVSJTJ-UHFFFAOYSA-N 1,1-Bis(4-hydroxyphenyl)ethane Chemical class C=1C=C(O)C=CC=1C(C)C1=CC=C(O)C=C1 HCNHNBLSNVSJTJ-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical group C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical class OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- IFVTZJHWGZSXFD-UHFFFAOYSA-N biphenylene Chemical group C1=CC=C2C3=CC=CC=C3C2=C1 IFVTZJHWGZSXFD-UHFFFAOYSA-N 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 235000013872 montan acid ester Nutrition 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 235000013873 oxidized polyethylene wax Nutrition 0.000 description 1
- 239000004209 oxidized polyethylene wax Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003578 releasing effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
本発明は、樹脂封止型半導体装置の製造に使用する封止成形用金型の離型性を回復させるために用いる半導体封止用金型離型回復樹脂組成物及びこれを用いた半導体装置の製造方法に関するものである。 The present invention relates to a mold release recovery resin composition for sealing a semiconductor used for recovering the mold release property of a mold for sealing used in the manufacture of a resin sealed semiconductor device, and a semiconductor device using the same It is related with the manufacturing method.
近年の電子機器の小型化、軽量化、高性能化の市場動向において、半導体素子の高集積化が年々進み、また半導体装置の表面実装化が促進されるなかで、半導体封止用エポキシ樹脂組成物への要求は益々厳しいものとなってきている。この要求に対応する様々な樹脂や添加剤が用いられた半導体封止用エポキシ樹脂組成物は、連続成形時に金型汚れが発生し、金型取られ、未充填等の成形不具合が起こりやすくなり、そのため定期的に金型表面のクリーニングを行うことが通常となってきている。 Epoxy resin composition for semiconductor encapsulation as the integration of semiconductor elements progresses year by year and the surface mounting of semiconductor devices is promoted in the market trend of downsizing, weight reduction and high performance of electronic devices in recent years. The demand for things has become increasingly severe. Epoxy resin compositions for semiconductor encapsulation using various resins and additives that meet this requirement are prone to mold fouling during continuous molding, and mold defects such as unfilling are likely to occur. Therefore, it has become normal to periodically clean the mold surface.
従来、半導体封止用金型のクリーニング材は、アミノ系樹脂のような成形収縮率の大きい樹脂と結晶破砕シリカ、ガラス繊維等の硬度の高い充填材等からなり、このクリーニング材を用いて金型表面の汚れを削り落とすというものが主体であった。クリーニング材を使用した後は金型表面が綺麗になる反面、金型表面の離型剤も取り去られるため、クリーニングした直後に成形された半導体装置の封止樹脂硬化物は極端に離型性が悪くなるという問題があった。そのためクリーニング材の使用後に、金型離型回復樹脂組成物を成形し、金型表面に金型離型回復樹脂組成物中の離型剤を移行させ塗布し、離型性を回復させる必要がある。 Conventionally, a semiconductor sealing mold cleaning material consists of a resin having a high molding shrinkage such as an amino resin and a filler having high hardness such as crystal-crushed silica and glass fiber. The main thing was scraping off the dirt on the mold surface. After using the cleaning material, the mold surface will be clean, but the mold release agent will also be removed, so the cured resin of the semiconductor device molded immediately after cleaning is extremely releasable. There was a problem of getting worse. Therefore, after using the cleaning material, it is necessary to mold the mold release recovery resin composition, transfer the mold release agent in the mold release recovery resin composition to the mold surface, and apply it to recover the release properties. is there.
金型離型回復樹脂組成物の機能は、金型表面に離型剤を移行させ塗布し、速やかに離型性を回復させることにあるが、多量の離型剤を移行させてしまうと、その後成形した半導体装置の封止樹脂硬化物表面に油浮きや汚れを起こすという問題があり、十分に離型剤を移行できない場合は離型性が回復できず、離型回復樹脂組成物を多量に用いる必要があるという問題が発生する。更に離型性回復後の離型性を長く持続できない場合は、頻繁に離型回復樹脂組成物を用いる必要があり生産性が低下する。
このため、離型剤としてモンタン酸系のエステルワックスや酸化、非酸化ポリエチレンワックスに酸化防止剤を添加することによって離型持続性を改善する手法が開示されている(例えば、特許文献1参照。)。この手法により、離型持続性は改善されるが、離型剤の主鎖が炭素鎖であるため、半導体封止用エポキシ樹脂組成物と比較的相溶し易く、成形した半導体装置の表面に油浮きや汚れを起こすという問題を十分に解決できなかった。
The function of the mold release recovery resin composition is to transfer and apply the release agent to the mold surface, and to quickly recover the release property, but if a large amount of release agent is transferred, After that, there is a problem of causing oil floating or dirt on the surface of the cured resin of the molded semiconductor device. If the release agent cannot be transferred sufficiently, the release property cannot be recovered, and a large amount of the release recovery resin composition is required. There arises a problem that it is necessary to use it. Furthermore, when the releasability after recovery of releasability cannot be sustained for a long time, it is necessary to frequently use a releasable recovery resin composition, and productivity is lowered.
For this reason, a technique for improving mold release sustainability by adding an antioxidant to a montanic acid ester wax or oxidized or non-oxidized polyethylene wax as a mold release agent is disclosed (for example, see Patent Document 1). ). Although this method improves mold release sustainability, since the main chain of the mold release agent is a carbon chain, it is relatively compatible with the epoxy resin composition for semiconductor encapsulation, and is formed on the surface of the molded semiconductor device. The problem of causing oil floating and dirt could not be solved sufficiently.
本発明は、樹脂封止型半導体装置の製造に使用する封止成形用金型の離型性を回復させるために用いる半導体封止用金型離型回復樹脂組成物であって、少量でも離型性を回復させ、離型性回復直後の半導体装置の表面に油浮きや汚れを生じず、離型性を長く維持できる半導体封止用金型離型回復樹脂組成物、及びそれ用いて成形金型の離型性を回復させる樹脂封止型半導体装置の製造方法を提供することを目的とするものである。 The present invention relates to a mold release recovery resin composition for semiconductor encapsulation used for recovering the mold release property of a mold for encapsulation used in the production of a resin-encapsulated semiconductor device. Mold release recovery resin composition for semiconductor encapsulation, which can maintain mold release characteristics without recovering oil floatation and dirt on the surface of the semiconductor device immediately after mold release recovery, and molding using the same It is an object of the present invention to provide a method for manufacturing a resin-encapsulated semiconductor device that recovers mold releasability.
本発明は、
[1]半導体封止用樹脂組成物を用いて半導体素子を成形封止する樹脂封止型半導体装置の製造方法において、半導体封止用金型表面をクリーニングするためのクリーニング材を用いて成形する工程、次いで半導体封止用金型離型回復樹脂組成物を用いて成形金型の離型性を回復させる工程、次いで前記半導体封止用樹脂組成物を用いて連続成形する工程を有し、前記半導体封止用金型離型回復樹脂組成物が(A)エポキシ樹脂、(B)フェノール樹脂、(C)硬化促進剤、(D)無機充填材、(E)一般式(1)で示されるオルガノポリシロキサンとエポキシ樹脂又はフェノール樹脂との反応生成物である変性オルガノポリシロキサンを必須成分とし、前記(E)変性オルガノポリシロキサンが全エポキシ樹脂組成物中に0.1〜20重量%含まれることを特徴とする樹脂封止型半導体装置の製造方法、
である。
The present invention
[1] In a method for manufacturing a resin-encapsulated semiconductor device in which a semiconductor element is molded and sealed using a semiconductor-encapsulating resin composition, molding is performed using a cleaning material for cleaning the surface of a semiconductor-encapsulating mold. A step, then a step of recovering the mold release property of the molding die using the mold release recovery resin composition for semiconductor sealing, and then a step of continuously molding using the resin composition for semiconductor sealing, The mold release recovery resin composition for semiconductor encapsulation is represented by (A) an epoxy resin, (B) a phenol resin, (C) a curing accelerator, (D) an inorganic filler, (E) represented by the general formula (1) The modified organopolysiloxane, which is a reaction product of the organopolysiloxane and the epoxy resin or phenol resin, is an essential component, and the (E) modified organopolysiloxane is 0.1 to 20 weight in the total epoxy resin composition. Method of manufacturing a resin-sealed semiconductor device, wherein the contained,
It is.
本発明の半導体封止用金型離型回復樹脂組成物は、少数回の成形で離型性を回復させることができ、かつ離型性回復直後の半導体封止成形において半導体装置の表面に油浮きや汚れを生じさせることがなく、更に良好な離型性を長く維持することができるので、半導体装置の製造における生産性向上に寄与するため、産業上有用である。 The mold release recovery resin composition for semiconductor encapsulation of the present invention can recover the mold release property by molding a few times, and oil is applied to the surface of the semiconductor device in the semiconductor seal molding immediately after the mold release recovery. It is industrially useful because it contributes to the improvement of productivity in the manufacture of semiconductor devices, because it can maintain a good release property for a long time without causing floating and dirt.
本発明は、エポキシ樹脂、フェノール樹脂、硬化促進剤、無機充填材、一般式(1)で表されるオルガノポリシロキサンとエポキシ樹脂又はフェノール樹脂との反応生成物である変性オルガノポリシロキサンを必須成分として含む金型離型回復樹脂組成物を用いて成形金型の離型性を回復させることにより、少数回の成形で離型性を回復させることができ、かつ離型性回復直後の半導体封止成形において半導体装置の表面に油浮きや汚れを生じさせることがなく、更に良好な離型性を長く維持することができるという顕著な効果が得られるものである。
以下、本発明について詳細に説明する。
The present invention includes an epoxy resin, a phenol resin, a curing accelerator, an inorganic filler, and a modified organopolysiloxane that is a reaction product of an organopolysiloxane represented by the general formula (1) and an epoxy resin or a phenol resin. The mold release recovery resin composition contained in the mold can be used to recover the mold releasability of the mold, so that the mold release can be recovered with a small number of moldings. In the stop molding, the surface of the semiconductor device does not cause oil floating or dirt, and a remarkable effect can be obtained that a good releasability can be maintained for a long time.
Hereinafter, the present invention will be described in detail.
本発明で用いられるエポキシ樹脂としては、特に限定するものではないが、例えば、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビスフェノール型エポキシ樹脂、スチルベン型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂、ナフタレン型エポキシ樹脂、アルキル変性トリフェノールメタン型エポキシ樹脂、トリアジン核含有エポキシ樹脂、ジシクロペンタジエン変性フェノール型エポキシ樹脂等が挙げられ、これらは単独でも混合して用いてもよい。 Although it does not specifically limit as an epoxy resin used by this invention, For example, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a biphenyl type epoxy resin, a bisphenol type epoxy resin, a stilbene type epoxy resin, a triphenolmethane Type epoxy resin, phenol aralkyl type epoxy resin, naphthalene type epoxy resin, alkyl-modified triphenol methane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, etc. It may be used.
本発明で用いられるフェノール樹脂としては、特に限定するものではないが、例えば、フェノールノボラック樹脂、クレゾールノボラック樹脂、ナフトールアラルキル樹脂、トリフェノールメタン型樹脂、テルペン変性フェノール樹脂、ジシクロペンタジエン変性フェノール樹脂、フェニレン及び/又はジフェニレン骨格を有するフェノールアラルキル樹脂等が挙げられ、これらは単独でも混合して用いてもよい。
エポキシ樹脂とフェノール樹脂との配合割合は特に限定するものではないが、エポキシ基/フェノール性水酸基の比としては、0.7〜1.5が好ましく、より好ましくは0.9〜1.2、更に好ましくは0.95〜1.15が望ましい。この範囲から大きく外れると、金型離型回復樹脂組成物が充分に硬化せず、離型性低下等の作業性の悪化が起こるおそれがある。
The phenolic resin used in the present invention is not particularly limited. Examples thereof include phenol aralkyl resins having a phenylene and / or diphenylene skeleton, and these may be used alone or in combination.
The blending ratio of the epoxy resin and the phenol resin is not particularly limited, but the ratio of epoxy group / phenolic hydroxyl group is preferably 0.7 to 1.5, more preferably 0.9 to 1.2, More preferably, 0.95 to 1.15 is desirable. If it deviates significantly from this range, the mold release recovery resin composition will not be sufficiently cured, and workability such as deterioration of mold release may be deteriorated.
本発明で用いられる硬化促進剤としては、前記エポキシ樹脂とフェノール樹脂との架橋反応の触媒となり得るものを指し、例えば、トリブチルアミン、1,8−ジアザビシクロ(5,4,0)ウンデセン−7等のアミン系化合物、トリフェニルホスフィン、テトラフェニルホスホニウム・テトラフェニルボレート塩等の有機リン系化合物、2−メチルイミダゾール等のイミダゾール化合物等が挙げられるが、これらに限定されるものではない。またこれらの硬化促進剤は単独でも混合して用いてもよい。 The curing accelerator used in the present invention is one that can be a catalyst for the crosslinking reaction between the epoxy resin and the phenol resin, and examples thereof include tributylamine, 1,8-diazabicyclo (5,4,0) undecene-7, and the like. Amine compounds, organic phosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate salts, and imidazole compounds such as 2-methylimidazole, but are not limited thereto. These curing accelerators may be used alone or in combination.
本発明に用いる一般式(1)で表されるオルガノポリシロキサンをエポキシ樹脂又はフェノール樹脂に反応させた生成物である変性オルガノポリシロキサンは、反応前の一般式(1)で表されるオルガノポリシロキサンよりも成形物中での分散性に優れ、かつ離型性を向上させる機能を有しているため、これを用いた金型離型回復樹脂組成物は、クリーニング材使用後の優れた金型離型回復性を示す。
一般式(1)で表されるオルガノポリシロキサンをエポキシ樹脂又はフェノール樹脂に反応させないで使用した場合、成形物中での分散性が不十分となり、成形封止の際、粘度上昇が生じたり、パッケージ汚れの原因となる。
一般式(1)で表されるオルガノポリシロキサン中のR1、R2はアミノ基、ヒドロキシル基、エポキシ基、カルボキシル基、ヒドロキシルフェニル基から選択される基、即ちエポキシ樹脂又はフェノール樹脂と反応し得る官能基であり、互いに同一であっても異なっていてもよい。R3、R4はアルキル基、アリール基、アラルキル基から選択される有機基であり、互いに同一であっても異なっていてもよい。重量平均分子量は130〜10000の正数である。下限を下回ると、エポキシ樹脂又はフェノール樹脂との反応時に揮発し、十分に反応できないため、離型効果を有さない。また上限を超えると、反応生成物の粘度が上昇して、樹脂組成物中における分散性が悪化し、金型表面に過度に染み出し易くなることにより、金型離型回復性の効果の点では優れているが、離型性回復直後に成形した半導体装置に油浮きや汚れが生じるという欠点が生じるため好ましくない。
When the organopolysiloxane represented by the general formula (1) is used without reacting with an epoxy resin or a phenol resin, the dispersibility in the molded product becomes insufficient, and a viscosity increase occurs during molding sealing, It may cause package contamination.
R 1 and R 2 in the organopolysiloxane represented by the general formula (1) react with a group selected from an amino group, a hydroxyl group, an epoxy group, a carboxyl group, and a hydroxylphenyl group, that is, an epoxy resin or a phenol resin. Functional group to be obtained, which may be the same or different. R 3 and R 4 are organic groups selected from an alkyl group, an aryl group, and an aralkyl group, and may be the same as or different from each other. The weight average molecular weight is a positive number from 130 to 10,000. If it falls below the lower limit, it volatilizes during the reaction with the epoxy resin or the phenol resin and cannot sufficiently react, so that it does not have a releasing effect. When the upper limit is exceeded, the viscosity of the reaction product increases, the dispersibility in the resin composition deteriorates, and it becomes easy to exude excessively on the mold surface. However, it is not preferable because the semiconductor device formed immediately after the releasability of mold release has the disadvantage that oil floats and stains occur.
予め反応させるエポキシ樹脂の具体例としては、一般的なエポキシ樹脂であればよいが、ビスフェノールF型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、4,4’−エチリデンビスフェノールのエポキシ誘導体などが好ましい。この中でもエポキシ当量150〜210で液状のものから軟化点100℃までのものが特に好ましい。 Specific examples of the epoxy resin to be reacted in advance include general epoxy resins, but bisphenol F type epoxy resins, bisphenol A type epoxy resins, epoxy derivatives of 4,4'-ethylidene bisphenol, and the like are preferable. Among these, those having an epoxy equivalent of 150 to 210 and a liquid to a softening point of 100 ° C. are particularly preferable.
予め反応させるフェノール樹脂の具体例として、フェノールノボラック、クレゾールノボラック、ナフトールノボラックなどのノボラック樹脂、フェノールアラルキル樹脂、ビフェニル骨格含有フェノールアラルキル樹脂、ジシクロペンタジエン骨格含有フェノール樹脂、ナフトールアラルキル樹脂、ビスフェノールAなどのビスフェノール化合物などが挙げられる。 Specific examples of the phenol resin to be reacted in advance include novolak resins such as phenol novolak, cresol novolak, and naphthol novolak, phenol aralkyl resins, biphenyl skeleton-containing phenol aralkyl resins, dicyclopentadiene skeleton-containing phenol resins, naphthol aralkyl resins, and bisphenol A. Examples thereof include bisphenol compounds.
本発明においては、一般式(1)で表されるオルガノポリシロキサンとエポキシ樹脂又はフェノール樹脂を化学反応させる場合、両者の混合割合は一般式(1)で表されるオルガノポリシロキサン1当量に対してエポキシ樹脂又はフェノール樹脂は1〜10当量が好ましく、さらに好ましくは1〜6当量である。 In the present invention, when the organopolysiloxane represented by the general formula (1) is chemically reacted with the epoxy resin or the phenol resin, the mixing ratio of the two is based on 1 equivalent of the organopolysiloxane represented by the general formula (1). The epoxy resin or phenol resin is preferably 1 to 10 equivalents, more preferably 1 to 6 equivalents.
一般式(1)で表されるオルガノポリシロキサンとエポキシ樹脂又はフェノール樹脂の化学反応には反応促進のための触媒を用いることも可能である。触媒としては特に限定されないが、イミダゾール化合物、アミノ化合物、有機ホスフィン化合物が用いられる。信頼性の面からトリフェニルホスフィンなどの有機ホスフィン化合物が特に好ましい。一般式(1)で表されるオルガノポリシロキサンとエポキシ樹脂又はフェノール樹脂の反応温度は70〜200℃の範囲であり、特に100〜180℃が好ましい。 A catalyst for promoting the reaction may be used for the chemical reaction of the organopolysiloxane represented by the general formula (1) and the epoxy resin or the phenol resin. Although it does not specifically limit as a catalyst, An imidazole compound, an amino compound, and an organic phosphine compound are used. An organic phosphine compound such as triphenylphosphine is particularly preferable from the viewpoint of reliability. The reaction temperature of the organopolysiloxane represented by the general formula (1) and the epoxy resin or the phenol resin is in the range of 70 to 200 ° C, particularly preferably 100 to 180 ° C.
一般式(1)で表されるオルガノポリシロキサンとエポキシ樹脂又はフェノール樹脂との反応生成物である変性オルガノポリシロキサンの配合量は、全エポキシ樹脂組成物中0.1〜20重量%である。下限値を下回ると金型表面に離型剤が充分に移行せず、期待されるような金型離型回復性が得られないおそれがある。上限値を超えると金型に過度に染み出し、離型回復直後に成形した半導体装置に油浮きが生じるという問題がある。 The compounding quantity of the modified organopolysiloxane which is a reaction product of the organopolysiloxane represented by the general formula (1) and the epoxy resin or the phenol resin is 0.1 to 20% by weight in the total epoxy resin composition. If the value is below the lower limit, the mold release agent does not sufficiently migrate to the mold surface, and there is a possibility that the expected mold release recoverability may not be obtained. When the upper limit is exceeded, there is a problem that the mold exudes excessively and oil floating occurs in the molded semiconductor device immediately after the release of the mold.
本発明の半導体封止用金型離型回復樹脂組成物には、(A)〜(E)成分の他に、必要に応じてカルナバワックス、ステアリン酸、モンタン酸ワックスといった離型剤や、カップリング剤、酸化防止剤、カーボンブラック等の着色剤等の添加剤を用いてもよい。
本発明の半導体封止用金型離型回復樹脂組成物は、ミキサー等を用いて原料を充分に均一に混合した後、更に熱ロール又はニーダー等で溶融混練し、冷却後粉砕して得られる。
In addition to the components (A) to (E), the mold release recovery resin composition for semiconductor encapsulation of the present invention includes a mold release agent such as carnauba wax, stearic acid, and montanic acid wax as needed. Additives such as colorants such as ring agents, antioxidants, and carbon black may be used.
The mold release recovery resin composition for semiconductor encapsulation of the present invention is obtained by mixing the raw materials sufficiently uniformly using a mixer or the like, then melt-kneading with a hot roll or kneader, etc., cooling and pulverizing. .
以下に本発明の実施例を示すが、本発明はこれらに限定されるものではない。配合割合は重量部とする。
実施例、比較例で用いた変性オルガノポリシロキサン1〜4及びオルガノポリシロキサン1〜2について、一般式(1)におけるR1〜R4、重量平均分子量、反応樹脂及びモル基準配合比について、表1にまとめて示す。
Examples of the present invention are shown below, but the present invention is not limited thereto. The blending ratio is parts by weight.
Example, the modified organopolysiloxane 1-4 and organopolysiloxane 1-2 used in Comparative Example, R 1 to R 4 in the general formula (1), the weight average molecular weight, the reactive resin and mole basis blending ratio, Table 1 is shown collectively.
オルソクレゾールノボラック型エポキシ樹脂(軟化点65℃、エポキシ当量209)
20.2重量部
フェノールノボラック樹脂(軟化点90℃、水酸基当量104) 10.0重量部
1,8−ジアザビシクロ(5,4,0)ウンデセン−7(以下、DBUという)
0.2重量部
溶融球状シリカ(平均粒径21μm) 67.0重量部
変性オルガノポリシロキサン1 2.0重量部
カルナバワックス 0.3重量部
カーボンブラック 0.3重量部
をミキサーを用いて各成分を混合した後、表面温度が95℃と25℃の2軸ロールを用いて20回混練して得られた混練物シートを冷却後粉砕した4メッシュ以下の粉砕物をタブレット化した。得られた樹脂組成物の特性を以下の方法で評価した。評価結果を表2に示す。
Orthocresol novolac type epoxy resin (softening point 65 ° C., epoxy equivalent 209)
20.2 parts by weight Phenol novolac resin (softening point 90 ° C., hydroxyl group equivalent 104) 10.0 parts by weight 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU)
0.2 parts by weight Fused spherical silica (average particle size 21 μm) 67.0 parts by weight Modified organopolysiloxane 1 2.0 parts by weight Carnauba wax 0.3 parts by weight Carbon black 0.3 parts by weight using a mixer After mixing, the kneaded material sheet obtained by kneading 20 times using a biaxial roll having surface temperatures of 95 ° C. and 25 ° C. was cooled and then pulverized with a mesh size of 4 mesh or less. The characteristics of the obtained resin composition were evaluated by the following methods. The evaluation results are shown in Table 2.
評価方法
離型回復性:金型表面をクリーニングするためのメラミン樹脂系クリーニング材(住友ベークライト(株)製、EMEC3)を用いて、離型時荷重評価用金型で成形品を3回成形し、前記金型の表面の離型剤成分を取り除いた後、金型離型回復樹脂組成物を3回成形した後、金型温度175℃、注入圧力6.9MPa、硬化時間2分の条件で評価用材料をトランスファー成形し、製品抜き出し時の離型荷重を測定した。単位はMPa。判定基準は30MPa以上を不合格、30MPa以下を合格とした。離型時荷重評価用金型は、上型・中型・下型とからなり、成形後に中型に付着した直径14mmで1.5mm厚の円形の成形品に、中型の上部の穴からプッシュプルゲージを当て、成形品を突き出した際にかかる荷重を測定した。評価用材料としては、住友ベークライト(株)製・半導体封止用エポキシ樹脂成形材料EME−7351を用いた。
Evaluation Method Mold Release Recovery: Using a melamine resin-based cleaning material (EMEC3, manufactured by Sumitomo Bakelite Co., Ltd.) for cleaning the mold surface, the molded product was molded three times with a mold for load release evaluation. After removing the mold release agent component on the surface of the mold, the mold release recovery resin composition was molded three times, and the mold temperature was 175 ° C., the injection pressure was 6.9 MPa, and the curing time was 2 minutes. The material for evaluation was transfer molded, and the release load at the time of product extraction was measured. The unit is MPa. The judgment criteria were 30 MPa or higher as rejected and 30 MPa or lower as acceptable. The mold for load release evaluation consists of an upper mold, a middle mold, and a lower mold. After molding, a 14 mm diameter and 1.5 mm thick circular molded product is attached to the middle mold, and a push-pull gauge from the upper hole of the middle mold And the load applied when the molded product was protruded was measured. As an evaluation material, Sumitomo Bakelite Co., Ltd., epoxy resin molding material EME-7351 for semiconductor encapsulation was used.
離型持続性:金型表面をクリーニングするためのメラミン樹脂系クリーニング材(住友ベークライト(株)製、EMEC3)を用いて、離型時荷重評価用金型で成形品を3回成形し、前記金型の表面の離型剤成分を取り除いた後、金型離型回復樹脂組成物を3回成形した後、金型温度175℃、注入圧力6.9MPa、硬化時間2分で評価用材料をトランスファー成形し、製品抜き出し時の離型荷重を測定した。離型荷重は、上型・中型・下型とからなる離型時荷重評価用金型を用いて成形し、成形後に中型に付着した直径14mmで1.5mm厚の円形の成形品に、中型の上部の穴からプッシュブルゲージを当て、成形品を突き出した際にかかる荷重とした。続けて評価用材料を200ショット成形し、離型荷重のショットごとの変化を測定した。このとき荷重が80MPa以上となったときのショット数を結果に記載した。200<は、200ショット以上を意味し、200ショット後においても荷重が80MPa以下であることを表現したものである。判定基準は150ショット未満を不合格、150ショット以上を合格とした。 Mold release sustainability: Using a melamine resin-based cleaning material (EMEC3, manufactured by Sumitomo Bakelite Co., Ltd.) for cleaning the mold surface, the molded product was molded three times with a mold for load release evaluation, After removing the mold release agent component on the mold surface, the mold release recovery resin composition was molded three times, and then the evaluation material was obtained at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 2 minutes. Transfer molding was performed, and the mold release load at the time of product extraction was measured. The mold release load is molded using a mold for load evaluation at the time of mold release composed of an upper mold, a middle mold, and a lower mold, and after molding, the medium mold is formed into a circular molded product having a diameter of 14 mm and a thickness of 1.5 mm. A push bull gauge was applied from the upper hole of the slab, and the load applied when the molded product was projected. Subsequently, 200 shots of the evaluation material were molded, and the change in the release load for each shot was measured. At this time, the number of shots when the load was 80 MPa or more was described in the results. 200 <means 200 shots or more, and expresses that the load is 80 MPa or less even after 200 shots. The judgment criteria were less than 150 shots as unacceptable and 150 shots or more as acceptable.
成形品汚れ:金型離型回復樹脂組成物の使用直後に、成形した評価用材料の成形品表面の油浮きとを目視で確認した。製品表面に汚れが発生したものは×、汚れがないものは○と表現した。 Molded product stain: Immediately after the use of the mold release recovery resin composition, the oil floating on the molded product surface of the molded evaluation material was visually confirmed. The case where the product surface was stained was expressed as “X”, and the case where the product surface was not stained was expressed as “◯”.
実施例2〜9、比較例1〜5
表1に示した変性オルガノポリシロキサン及びオルガノポリシロキサンを用いて、表2、表3、表4の配合に従い、実施例1と同様に樹脂組成物を作製し、実施例1と同様にして評価した。結果を表2、表3、表4に示す。実施例2で用いたビフェニル型エポキシ樹脂(ジャパンエポキシレジン(株)製、YX−4000)は、融点105℃、エポキシ当量195である。実施例2で用いたフェノールアラルキル樹脂(三井化学(株)製、XL−225)は、軟化点79℃、水酸基当量174である。また、実施例3では離型剤としてモンタン酸ワックスを用いた。
Examples 2-9, Comparative Examples 1-5
Using the modified organopolysiloxane and organopolysiloxane shown in Table 1, a resin composition was prepared in the same manner as in Example 1 in accordance with the formulations in Tables 2, 3, and 4, and evaluated in the same manner as in Example 1. did. The results are shown in Table 2, Table 3, and Table 4. The biphenyl type epoxy resin (YX-4000 manufactured by Japan Epoxy Resin Co., Ltd.) used in Example 2 has a melting point of 105 ° C. and an epoxy equivalent of 195. The phenol aralkyl resin (Mitsui Chemicals, XL-225) used in Example 2 has a softening point of 79 ° C. and a hydroxyl group equivalent of 174. In Example 3, montanic acid wax was used as a release agent.
本発明の半導体封止用金型離型回復樹脂組成物は、少数回の成形で離型性を回復させることができ、かつ離型性回復直後の半導体封止成形において半導体装置の表面に油浮きや汚れを生じさせることがなく、更に良好な離型性を長く維持することができるので、半導体装置の製造における生産性向上に寄与するため、産業上有用である。 The mold release recovery resin composition for semiconductor encapsulation of the present invention can recover the mold release property by molding a few times, and oil is applied to the surface of the semiconductor device in the semiconductor seal molding immediately after the mold release recovery. It is industrially useful because it contributes to the improvement of productivity in the manufacture of semiconductor devices, because it can maintain a good release property for a long time without causing floating and dirt.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004374502A JP4765310B2 (en) | 2004-12-24 | 2004-12-24 | Manufacturing method of resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004374502A JP4765310B2 (en) | 2004-12-24 | 2004-12-24 | Manufacturing method of resin-encapsulated semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006182802A JP2006182802A (en) | 2006-07-13 |
JP4765310B2 true JP4765310B2 (en) | 2011-09-07 |
Family
ID=36736161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004374502A Expired - Fee Related JP4765310B2 (en) | 2004-12-24 | 2004-12-24 | Manufacturing method of resin-encapsulated semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4765310B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4943225B2 (en) * | 2006-05-25 | 2012-05-30 | 日東電工株式会社 | Mold cleaning composition |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6346216A (en) * | 1986-04-11 | 1988-02-27 | Mitsubishi Electric Corp | Epoxy resin composition for semiconductor sealing use |
JPS62254453A (en) * | 1986-04-25 | 1987-11-06 | Nitto Electric Ind Co Ltd | Semiconductor device |
JP2635350B2 (en) * | 1988-02-15 | 1997-07-30 | 日東電工株式会社 | Semiconductor device and epoxy resin composition used therefor |
JP2699885B2 (en) * | 1994-09-05 | 1998-01-19 | 三菱電機株式会社 | Epoxy resin composition for semiconductor encapsulation |
JPH0940746A (en) * | 1995-08-01 | 1997-02-10 | Shin Etsu Chem Co Ltd | Epoxy resin composition for restoring mold release characteristics |
JPH1050899A (en) * | 1996-08-06 | 1998-02-20 | Nitto Denko Corp | Semiconductor device |
JP2872973B2 (en) * | 1996-09-12 | 1999-03-24 | 日東電工株式会社 | Semiconductor device and epoxy resin composition for semiconductor encapsulation |
JP3685253B2 (en) * | 2001-02-23 | 2005-08-17 | 信越化学工業株式会社 | Resin composition containing silicone-modified epoxy resin or silicone-modified phenol resin, and semiconductor device using the same |
JP2003105057A (en) * | 2001-09-28 | 2003-04-09 | Toray Ind Inc | Epoxy resin composition and semiconductor device |
JP2003252960A (en) * | 2002-03-05 | 2003-09-10 | Toray Ind Inc | Epoxy resin composition and resin-sealed semiconductor device |
JP2005097448A (en) * | 2003-09-25 | 2005-04-14 | Matsushita Electric Works Ltd | Liquid epoxy resin composition for sealing semiconductor and semiconductor apparatus |
MY159179A (en) * | 2004-03-16 | 2016-12-30 | Sumitomo Bakelite Co | Epoxy resin composition and semiconductor device. |
JP4586405B2 (en) * | 2004-04-28 | 2010-11-24 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
JP2005336361A (en) * | 2004-05-27 | 2005-12-08 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
-
2004
- 2004-12-24 JP JP2004374502A patent/JP4765310B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2006182802A (en) | 2006-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5605394B2 (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
JP4788916B2 (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
JP4590899B2 (en) | Mold release recovery resin composition and method for manufacturing semiconductor device | |
JP4765310B2 (en) | Manufacturing method of resin-encapsulated semiconductor device | |
JP5298310B2 (en) | Resin composition for sealing electronic components and electronic component device using the same | |
JP2006328360A (en) | Epoxy resin composition and semiconductor device | |
JP4788033B2 (en) | Method for producing mold release recovery resin composition | |
JP4581455B2 (en) | Mold release recovery resin composition and method for manufacturing semiconductor device | |
JP4561220B2 (en) | Epoxy resin composition and semiconductor device | |
JP2006182801A (en) | Mold release restoring resin composition and method for producing semiconductor device | |
JP2006282876A (en) | Epoxy resin composition and semiconductor device | |
JP4946030B2 (en) | Epoxy resin composition and semiconductor device | |
JP2008106161A (en) | Epoxy resin composition | |
JP2007039655A (en) | Epoxy resin composition for semiconductor encapsulation, and semiconductor device | |
JP4569260B2 (en) | Epoxy resin composition and semiconductor device | |
JP4586405B2 (en) | Epoxy resin composition and semiconductor device | |
JP2007063402A (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
JP2005264040A (en) | Resin composition for recovering mold releasability | |
JP4654550B2 (en) | Epoxy resin composition and semiconductor device | |
JP2007238731A (en) | Mold release restoring resin composition and method for producing semiconductor device | |
JP2002161189A (en) | Resin composition for recovering mold releasability | |
JP5326975B2 (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
JP2006182803A (en) | Epoxy resin composition and semiconductor device | |
JP4622123B2 (en) | Method for producing mold release recovery resin composition | |
JP2005336361A (en) | Epoxy resin composition and semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070711 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100426 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100511 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100625 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110517 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110530 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4765310 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140624 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |