JP2002151797A5 - - Google Patents

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Publication number
JP2002151797A5
JP2002151797A5 JP2001233486A JP2001233486A JP2002151797A5 JP 2002151797 A5 JP2002151797 A5 JP 2002151797A5 JP 2001233486 A JP2001233486 A JP 2001233486A JP 2001233486 A JP2001233486 A JP 2001233486A JP 2002151797 A5 JP2002151797 A5 JP 2002151797A5
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JP
Japan
Prior art keywords
layer
type
nitride semiconductor
active layer
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001233486A
Other languages
English (en)
Japanese (ja)
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JP2002151797A (ja
JP3775259B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2001233486A priority Critical patent/JP3775259B2/ja
Priority claimed from JP2001233486A external-priority patent/JP3775259B2/ja
Publication of JP2002151797A publication Critical patent/JP2002151797A/ja
Publication of JP2002151797A5 publication Critical patent/JP2002151797A5/ja
Application granted granted Critical
Publication of JP3775259B2 publication Critical patent/JP3775259B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001233486A 2001-08-01 2001-08-01 窒化物半導体レーザ素子 Expired - Lifetime JP3775259B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001233486A JP3775259B2 (ja) 2001-08-01 2001-08-01 窒化物半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001233486A JP3775259B2 (ja) 2001-08-01 2001-08-01 窒化物半導体レーザ素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15781296A Division JPH1012969A (ja) 1996-06-19 1996-06-19 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2002151797A JP2002151797A (ja) 2002-05-24
JP2002151797A5 true JP2002151797A5 (ko) 2004-07-15
JP3775259B2 JP3775259B2 (ja) 2006-05-17

Family

ID=19065255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001233486A Expired - Lifetime JP3775259B2 (ja) 2001-08-01 2001-08-01 窒化物半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP3775259B2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009054616A (ja) * 2007-08-23 2009-03-12 Sharp Corp 窒化物半導体発光素子の製造方法と窒化物半導体発光層

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