JP2002151797A5 - - Google Patents
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- JP2002151797A5 JP2002151797A5 JP2001233486A JP2001233486A JP2002151797A5 JP 2002151797 A5 JP2002151797 A5 JP 2002151797A5 JP 2001233486 A JP2001233486 A JP 2001233486A JP 2001233486 A JP2001233486 A JP 2001233486A JP 2002151797 A5 JP2002151797 A5 JP 2002151797A5
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- JP
- Japan
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- nitride semiconductor
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- well
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001233486A JP3775259B2 (ja) | 2001-08-01 | 2001-08-01 | 窒化物半導体レーザ素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001233486A JP3775259B2 (ja) | 2001-08-01 | 2001-08-01 | 窒化物半導体レーザ素子 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15781296A Division JPH1012969A (ja) | 1996-06-19 | 1996-06-19 | 窒化物半導体レーザ素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002151797A JP2002151797A (ja) | 2002-05-24 |
JP2002151797A5 true JP2002151797A5 (ko) | 2004-07-15 |
JP3775259B2 JP3775259B2 (ja) | 2006-05-17 |
Family
ID=19065255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001233486A Expired - Lifetime JP3775259B2 (ja) | 2001-08-01 | 2001-08-01 | 窒化物半導体レーザ素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3775259B2 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009054616A (ja) * | 2007-08-23 | 2009-03-12 | Sharp Corp | 窒化物半導体発光素子の製造方法と窒化物半導体発光層 |
-
2001
- 2001-08-01 JP JP2001233486A patent/JP3775259B2/ja not_active Expired - Lifetime
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