JP2002148281A - Contact part and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide contact parts for wafer-included contact board which has small stress difference between core bump and coating plating and proper contact between the core bump and coating plating, and will not cause cracks in the coating plating, and to provide its manufacturing method. SOLUTION: On a conduction layer 35 of a dielectric 32, one electrode for plating is connected for electrolytic plating and the plating is grown in at least the bump hole 36 to form a core bump 37a, in one process. By using plating liquid for coating plating containing the same plating material as the plating liquid for core bump forming and dispersing fine particles, the core bump 37a surface is coating plated, and at the same time fine particles 38 are taken in the coating plating 37b layer in another process. These two processes are included in the manufacturing method for the contact parts for wafer-included contact board.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a component such as a wafer batch contact board used for collectively performing inspection (test) of a large number of semiconductor devices formed on a wafer in a wafer state. The present invention relates to a certain contact component and a manufacturing method thereof.

[0002]

2. Description of the Related Art Inspection of a large number of semiconductor devices formed on a wafer is roughly classified into a product inspection (electrical characteristic test) using a probe card and a burn-in test which is a reliability test performed thereafter. The burn-in test is one of screening tests performed to remove a semiconductor device having an intrinsic defect or a device which causes a time- and stress-dependent failure from manufacturing variations. The burn-in test can be said to be a thermal acceleration test, while the inspection with a probe card is an electrical characteristic test of the manufactured device.

[0003] The burn-in test is an ordinary method (one chip) in which a wafer is cut into chips by dicing after a electrical characteristic test performed for each chip by a probe card, and the packaged products are subjected to a burn-in test one by one. Burn-in systems are not feasible in terms of cost. Accordingly, development and commercialization of a wafer batch contact board (burn-in board) for simultaneously performing a burn-in test of a large number of semiconductor devices formed on a wafer at once are being promoted (Japanese Patent Laid-Open No. 7-2310).
No. 19). Wafer and batch burn-in systems using wafer batch contact boards are not only highly feasible in terms of cost, but also important technologies for realizing the latest technological flows such as bare chip shipping and bare chip mounting. .

[0004] The wafer batch contact board is different from the conventional probe card in required characteristics in that it is used for inspection of wafers in a batch and used for a heating test, and has a high required level. When the wafer batch contact board is put into practical use, in addition to the burn-in test (including the case where an electrical characteristic test is performed), a part of the product inspection (electrical characteristic test) conventionally performed by a probe card is performed by a wafer. It is also possible to perform it all at once.

FIG. 8 shows a specific example of a wafer batch contact board as an example of a semiconductor inspection contact board. As shown in FIG. 8, the wafer batch contact board has a contact component 30 fixed on a multilayer wiring board for a wafer batch contact board (hereinafter, referred to as a multilayer wiring board) 10 via an anisotropic conductive rubber sheet 20. Having a structure. The contact component 30 is responsible for a contact portion that directly contacts the device under test. Contact component 30
5, an isolated bump 33 is formed on one surface of the insulating film 32, and an isolated pad 34 is formed on the other surface in one-to-one correspondence with the isolated bump 33. The insulating film 32 is stretched over the ring 31 having a low coefficient of thermal expansion in order to avoid displacement due to thermal expansion. The isolated bumps 33 are formed on electrodes (1) formed on the periphery or center line of each semiconductor device (chip) on the wafer 40.
(The number of electrodes is about 600 to 1000 pins, and the number of chips is multiplied by the number of chips on the wafer), and the same number of electrodes are formed at corresponding positions. The multilayer wiring board 10 has wiring and pad electrodes (not shown) for applying a predetermined burn-in test signal or the like to each of the bumps 33 isolated on the insulating film 32 via the isolated pad 34 on the insulating substrate 32. Have. The multilayer wiring board 10 has a multilayer wiring structure because the wiring is complicated. Further, in the multilayer wiring board 10, an insulating substrate having a low coefficient of thermal expansion is used in order to avoid a connection failure due to displacement of the isolated pad 34 on the insulating film 32 due to thermal expansion. The anisotropic conductive rubber sheet 20 includes pad electrodes (not shown) on the multilayer wiring board 10 and isolated pads 3 on the insulating film 32.
And an electrically conductive elastic member having a conductivity only in a direction perpendicular to the main surface (made of silicon resin, and having metal particles at portions corresponding to the isolated pad 34 and the pad electrode). It is a sheet-like connection component having embedded anisotropic conductive rubber). The anisotropic conductive rubber sheet 20 is brought into contact with an isolated pad 34 on the insulating film 32 by a convex portion (not shown) of the anisotropic conductive rubber formed so as to protrude from the surface of the sheet. In addition, both the flexibility and the flexibility of the insulating film 32 combine to absorb irregularities on the surface of the semiconductor wafer 40 and variations in the height of the isolated bumps 33. Is securely connected to the isolated bump 33.

A method of manufacturing a contact component for a wafer batch contact board will be described below. FIG. 7 is a cross-sectional view showing a part of the manufacturing process of the contact component. First, FIG.
As shown in (1), an intermediate component having a structure in which a laminated film 103 having a structure in which a copper foil 104 and a polyimide film 105 are bonded to each other and attached to a SiC ring 106 with tension is prepared.

[0007] Next, as shown in FIG. 7 (2), at a predetermined position of the polyimide film 105 in the laminated film 103, a diameter of about 30 μm
A bump hole 108 is formed.

Next, after protecting the surface of the copper foil 104 so as not to be plated, one of the plating electrodes is connected to the copper foil 104 and Ni electrolytic plating is performed. As shown in FIG. 7C, the plating grows so as to fill the bump holes 108, and then spreads isotropically and grows almost hemispherically when reaching the surface of the polyimide film 105, and is made of hard Ni. The core bump 109 is formed.

Next, a resist is applied on the copper foil 104,
A resist pattern is formed by exposure and development (not shown), and the copper foil 10
4 is etched to form an isolated pad 110 as shown in FIG. Through the above steps, a contact component for a wafer batch contact board is manufactured.

Conventionally, the surface of bumps in the contact parts for the wafer batch contact board has been roughened. As described above, by roughening the surface of the bump, the contact area increases, and more reliable contact can be obtained. In addition, even when an oxide film is formed on the contact target portion, the oxide film can be broken by roughening,
Stable contact resistance is obtained. The following method is mentioned as a method of roughening the bump surface. The first method is to coat and coat the surface of the core bump 109 with a material capable of forming a hard and rough surface such as rhodium (Rh).
The second method is a method in which the surface of the bump 109 is roughened by repeating adsorption and desorption with a ceramic plate, or a method in which the surface is roughened with sandpaper or the like. A third method is a method in which fine metal particles are adhered by a plating method to roughen the bump surface (JP-A-6-27141).

[0011]

However, in the first method, since the coating is made by coating with a material different from the material of the core bump, the compatibility of the metal (bonding force between atoms and molecules, stress, etc.) is poor, and the coating is plated. In some cases, cracks occurred in the layer or the coating plating was peeled off. For details, see Ni
When Rh coating plating is performed on the surface of the core bump, Ni / Au
If Au is not inserted in the middle as in / Rh, the adhesion is weak. In the case where Au and Rh are sequentially coated and plated on the surface of the Ni core bump, an Au plating solution and Rh
The base of the Ni core bumps is eroded by the plating solution (all strongly acidic solutions), and the core bumps easily fall off.

In the second method, when the area for forming bumps is large and the number of bumps is large (for example, 8 inches or more, the number of bumps is 6000 or more), it is necessary to uniformly roughen all bump surfaces over the entire surface. It was difficult.

In the third method, there is a problem that the adhesion of metal fine particles deposited by plating is weak.

Further, a method of coating and plating Ni plating on the surface of the Ni core bump under roughening conditions is also conceivable.
In this case, the compatibility and roughness of the metal are improved, but there is no plating condition that simultaneously satisfies the roughening of the coating plating and its hardness (the plating conditions differ between the roughening condition and the hardening condition). Therefore, it was difficult to satisfy the hardness of the coating plating. If the hardness of the coating plating is insufficient, the bumps will be crushed when contact is repeated, resulting in poor contact.

[0015] The present invention has been made under such a background, and a simple structure of the bumps prevents the bumps from falling off, and can form uniform unevenness even when the number of bumps increases. It is a first object of the present invention to provide a contact component capable of preventing a convex part of a surface unevenness from being lost, a method of manufacturing the same, and the like. It is a second object of the present invention to provide a method of manufacturing a contact component that can be easily manufactured without increasing costs and steps.

[0016]

Means for Solving the Problems To achieve the above object, the present invention has the following configuration.

(Structure 1) In a contact component having at least a metal bump supported so as to protrude from an insulating film and connected to a predetermined conductive path, fine particles are dispersed in at least a surface layer of the bump. A contact component having a coating layer on a surface roughened by the method.

(Structure 2) In a contact component having at least a metal bump supported so as to protrude from an insulating film and connected to a predetermined conductive path, the bump is formed on at least a surface layer of a metal constituting the bump. A contact part characterized in that the surface is roughened by dispersing fine particles coated with a material that is compatible with the material.

(Structure 3) In a contact component having at least a metal bump supported so as to protrude from an insulating film and connected to a predetermined conductive path, the bump has a non-metal fine particle at least in a surface layer portion thereof. A contact component characterized in that the surface is roughened by being dispersed.

(Structure 4) In a contact component having at least a metal bump supported so as to protrude from an insulating film and connected to a predetermined conductive path, the bump is formed by a concave portion which is a mark from which fine particles have been removed. A contact component having a roughened surface.

(Structure 5) A bump protrudes from one surface of the insulating film attached to the ring, and has a conductive pattern on the other surface. The bump and the conductive pattern are provided on the insulating film. Configuration 1 characterized by being electrically connected by the conductive material filled in the through hole
4. The contact component according to any one of items 4.

(Structure 6) In the method for manufacturing a contact component according to Structure 1, the bump is formed by plating and growing using a plating in which fine particles are dispersed to form a roughened surface. A step of plating and growing a coating layer on the planarized surface.

(Structure 7) In the method for manufacturing a contact component according to Structure 2, the bump is formed by plating using a plating in which fine particles covered with a material compatible with the metal constituting the bump are dispersed. A method for producing a contact component, characterized by comprising a method having at least a step of forming a roughened surface.

(Structure 8) In the method for manufacturing a contact component according to Structure 3, at least a step of forming a roughened surface by plating and growing the bump using plating in which non-metal fine particles are dispersed is provided. A method for manufacturing a contact component, characterized by being formed by a method having the above.

(Structure 9) In the method for manufacturing a contact component according to Structure 4, the bump is formed by plating using a plating in which fine particles that can be selectively removed in a later step are dispersed, and then the bump is formed. A method for manufacturing a contact component, characterized by being formed by a method having at least a step of selectively removing particles.

(Structure 10) A contact board for semiconductor inspection used for testing a semiconductor device on a wafer, wherein a contact component described in Structure 5 and wiring are laminated via an insulating layer. A multilayer wiring board for semiconductor inspection having a structure in which upper and lower wirings are connected via a contact hole formed in a layer; and an anisotropic conductive rubber sheet for electrically connecting the multilayer wiring board and the contact component. A contact board for semiconductor inspection characterized by having.

(Structure 11) A semiconductor inspection method characterized by performing a semiconductor inspection using the contact component according to any one of Structures 1 to 5.

[0028]

According to the first aspect, since the coating layer covering the fine particles is formed, the adhesion of the fine particles can be improved. As a method of manufacturing the contact component of the above configuration 1, there is a method described in configuration 6.

As a method of manufacturing a contact component suitable for a wafer batch contact board using this method (method 1), a laminated film having a structure in which an insulating film and a conductive layer are laminated is attached to a ring with tension. Preparing an intermediate part having a structured structure, a step of forming a bump hole at a predetermined position of the insulating film in the laminated film, and performing electroplating by connecting one of the plating electrodes to the conductive layer, A step of forming a core bump by growing plating in the bump hole, and including the same plating material as the core bump forming plating liquid, and coating the core bump surface using a coating plating liquid in which fine particles are dispersed. A step of incorporating the fine particles into the first coating plating layer at the same time as plating; Forming a first coating plating layer and a second coating plating layer covering the fine particles by using a plating solution for coating plating containing a plating material; and selectively etching the conductive layer to form the insulating layer. Forming an isolated pad at least at a position corresponding to the bump on the conductive film.

Here, instead of the core bump forming step and the step of taking in fine particles in the manufacturing method of the above method 1, plating is grown at least in the bump holes to form bumps, and at the same time the fine particles are placed in the bumps. The bump itself may be formed by using a plating solution in which fine particles are dispersed by adopting a step of taking in (method 2). In this case, the fine particles are captured not only on the bump surface but also on the entire bump. The advantage is that bumps can be formed in a single step.

As a specific example of the above method 1, for example, as shown in FIG. 1, a plating solution for forming a core bump is used, one of the plating electrodes is connected to the conductive layer 35 and electrolytic plating is performed. Bump hole 36 formed in 32
The core bumps 37a are formed first by growing plating. Next, the surface of the core bumps 37a is coated with the plating solution containing the same plating material as the core bump forming plating solution and in which fine particles are dispersed, and at the same time, the fine particles 38 are taken into the first coating plating 37b layer. Further, as shown in FIG. 2, a second coating plating 37c is formed on the first coating plating 37b and the fine particles 38 using the same plating solution as the core bump forming plating solution. The other parts in FIG. 2 are assigned the same reference numerals as those in FIG. According to the above method 1, since the second coating plating 37c that covers the fine particles 38 is formed, the adhesion of the fine particles 38 can be improved, and at the same time, the core bump material and the first and second coating plating materials are the same. So that
The stress difference between the core bump and the first and second cover platings is small, so that the adhesion between the core bumps and the cover plating is good, and no cracks occur in the first and second cover platings.
Furthermore, even if the bump expands due to heat in the burn-in test, the adhesion is good and no crack occurs. Further, contamination of the core bump due to migration in the burn-in test can be prevented. By selecting the core bump material, the first and second coating plating materials, and the plating conditions,
The hard core bump surface can be hard-coated and the fine particles are taken into the first and second hard-coated plating layers and held firmly. Therefore, as a whole bump, hardness is high,
Since it is excellent in durability and can be uniformly roughened, the contact resistance does not vary for each bump contact.

As the plating solution and plating conditions for forming the core bump, it is preferable to select a plating material and conditions under which a hard core bump can be formed. For example, hardness 150-
When forming a Ni core bump of 600 Hv, the current density is 0.1 to 60 with a nickel sulfamate plating solution.
Plating is performed under the condition of A / dm ² . Other hard core bump materials include Ni or Ni alloy (Ni-Co alloy, Ni-Pd alloy, etc.), Cu and the like.

Fine particles suitable for the constitutions 1 and 6, the methods 1 and 2, include fine metal particles such as diamond (powder), graphite, carbon, SiO ₂ (powder), glass (powder), Ti, W, and Mo. And the like. Further, those obtained by coating the surface of these fine particles with Ni electroless plating or the like are also suitable as the fine particles of Configuration 1. For example, a material in which the surface of SiO ₂ (powder) or glass (powder) is coated with Ni electroless plating has conductivity and the hardness of fine particles is high. Diamond (powder), graphite, and carbon have conductivity and high hardness. In addition,
In FIG. 2, even when the fine particles 38 are non-conductors, electrical contact can be achieved by forming the coating plating 37c. When the fine particles 38 are conductors, the coating property of the coating 37c is excellent.

Other conditions of the fine particles suitable for the constitutions 1 and 6, the methods 1 and 2, include a plating solution (weakly acidic).
Are insoluble in water or are harmless even if dissolved, have low solubility in plating solution, can be dispersed in plating solution, and have high hardness.

The particle diameter of the fine particles suitable for the constitutions 1 and 6, the method 1 and the method 2 is preferably about 0.05 to 5 μm, more preferably about 0.1 to 5 μm. Those having a particle size distribution are more preferable than those having a uniform particle size, because they have a large surface roughness. If the particle size is too large, the degree of surface roughening becomes too large, and the particles tend to sink in the plating solution, which is not preferable. Particles having a specific gravity lower than that of water can be dispersed by convection of the plating solution.

The concentration of the fine particles is 1 to 100 g /
It is preferably about 100 ml, more preferably about 5 to 50 g / 100 ml. If the concentration of the fine particles is too high, the viscosity of the plating solution will be too high to perform good plating, and if the concentration is too low, the degree of surface roughening will be too small.

As additives for the plating solution, nickel bromide, nickel chloride, boric acid, brighteners, pH adjusters and the like can be mentioned. Here, bromide and chloride such as nickel bromide and nickel chloride are added as an anode electrolyte (Cl and Br promote electrolysis of the anode). Boric acid is added for the purpose of increasing the electric conductivity of the electrolyte. By adjusting the content of the brightener in the plating solution, the hardness and surface state of the core bump can be changed. It is more preferable that the surface of the bump obtained in the configuration 1 or the like be roughened by pressing a hard material such as a ceramic plate or the like, since the surface of the bump can be more uniformly roughened.

In the above configuration 2, since the fine particles whose particle surfaces are coated with a material compatible with the metal forming the bumps are used, the adhesion of the fine particles can be improved. Examples of the fine particles whose surface is coated with a material compatible with the coating layer coated on the core bump surface include diamond (powder), graphite, carbon, and Si.
Fine particles such as O ₂ (powder) and glass (powder), Ti,
Examples thereof include those obtained by coating the surface of metal fine particles such as W and Mo with a metal material (including an alloy) compatible with the coating plating layer. When the surface of SiO ₂ (powder) or glass (powder) is coated with Ni electroless plating, the compatibility with the coating plating layer is good and the hardness of fine particles is high. That is, as the material for covering the fine particles, it is preferable to use the same metal or an alloy containing the same metal as the material forming the bump. It is preferable to combine the configurations 1 and 2 because the adhesion of the fine particles can be further improved. Further, it is more preferable that the surface of the bump obtained in the configuration 2 is roughened by pressing a hard material such as a ceramic plate or the like, because the bump surface can be more uniformly roughened. As a method of manufacturing the contact component of the above configuration 2, there is a method described in configuration 7.

As a method of manufacturing a contact component suitable for a wafer batch contact board using this method (method 3), a laminated film having a structure in which an insulating film and a conductive layer are laminated is attached to a ring with tension. Preparing an intermediate part having a structured structure, a step of forming a bump hole at a predetermined position of the insulating film in the laminated film, and performing electroplating by connecting one of the plating electrodes to the conductive layer, A step of forming a core bump by growing plating in the bump hole, and a step of preparing fine particles having a particle surface coated with a material compatible with a coating layer coated on the core bump surface,
Using a plating solution for coating plating in which the fine particles are dispersed, simultaneously coating and plating the core bump surface with the fine particles in the coating plating layer, and selectively etching the conductive layer to form the insulating layer. Forming an isolated pad at least at a position corresponding to the bump on the film. Other items are the same as in the above configuration 1.

In the above configuration 3, for example, nonmetallic fine particles such as diamond (powder), graphite, and carbon have high hardness and high adhesion of the fine particles. It is preferable to combine the configuration 3 with the configuration 1 and / or the configuration 2 because the adhesion of the fine particles can be further improved. It is further preferable that the surface of the bump obtained in the configuration 3 is roughened by pressing a hard material such as a ceramic plate or the like, because the bump surface can be more uniformly roughened. As a method of manufacturing the contact component of the above configuration 3, there is a method described in configuration 8.

As a method of manufacturing a contact component suitable for a wafer batch contact board using this method (method 4), a laminated film having a structure in which an insulating film and a conductive layer are laminated is attached to a ring with tension. Preparing an intermediate part having a structured structure, a step of forming a bump hole at a predetermined position of the insulating film in the laminated film, and performing electroplating by connecting one of the plating electrodes to the conductive layer, Forming a core bump by growing plating in the bump hole; and non-metal fine particles (for example, diamond particles, graphite particles,
At least one type of fine particles selected from carbon particles)
Using a plating solution for coating plating, in which the surface of the core bump is coated and covered with the fine particles simultaneously with the coating plating layer, and the conductive layer is selectively etched to form a coating on the insulating film. Forming an isolated pad at least at a position corresponding to the bump. Other items are the same as in the above configuration 1.

In the above configuration 4, the surface is roughened by the concave portion which is a mark where fine particles have been removed. Configuration 4 above
As a method of manufacturing the contact component of the above, there is a method described in Configuration 9.

As a method of manufacturing a contact component suitable for a wafer batch contact board using this method, the following three methods can be mentioned. (Method 5) A step of preparing an intermediate part having a structure in which a laminated film having a structure in which an insulating film and a conductive layer are laminated is attached to a ring with tension and provided at a predetermined position of the insulating film in the laminated film. Forming a bump hole, performing electroplating by connecting one of the plating electrodes to the conductive layer, forming a core bump by growing plating at least in the bump hole, and selectively forming a core bump in a later step. Using a plating solution for coating plating in which removable fine particles are dispersed, coating and plating the core bump surface with fine particles that can be selectively removed in the post-process simultaneously with the coating plating layer; Selectively removing the fine particles incorporated in the layer, and selectively etching the conductive layer, at least on the insulating film. Forming an isolated pad at a position corresponding to the bump.

(Method 6) A step of preparing an intermediate part having a structure in which an insulating film and a conductive layer are laminated and having a structure in which a laminated film is attached to a ring by applying tension, and a method of forming an insulating film in the laminated film. Forming a bump hole at a position, performing electroplating by connecting one of the plating electrodes to the conductive layer, forming a core bump by growing plating at least in the bump hole, and a post-process. The surface of the core bump is plated with the plating solution using a plating solution for coating in which both the first fine particles that can be selectively removed and the second fine particles that are not removed in a subsequent step are dispersed, and the first plating is applied to the coating plating layer at the same time. Capturing both the fine particles and the second fine particles; and selectively removing the first fine particles captured by the coating plating layer; Selectively etching the conductive layer to form an isolated pad at least at a position corresponding to the bump on the insulating film.

(Method 7) A step of preparing an intermediate part having a structure in which an insulating film and a conductive layer are laminated and having a structure in which a laminated film is attached to a ring by applying tension, and a method of forming an insulating film in the laminated film. Using a plating solution for bump formation in which fine particles that can be selectively removed in a post-process and a bump forming plating solution dispersed in a subsequent step, one of the plating electrodes is connected to the conductive layer and electrolytic plating is performed. Forming a bump by growing plating in at least the bump hole and simultaneously incorporating fine particles that can be selectively removed in the post-process into the bump; and selectively removing the fine particles in the bump surface layer. And a step of selectively etching the conductive layer to form an isolated pad at least at a position corresponding to the bump on the insulating film. And a method of manufacturing a contact component.

As a specific example of the above-described structure 4, structure 9, and method 5, for example, as shown in FIG. 3A, a plating solution for forming a core bump is used, and one of the plating electrodes is connected to the conductive layer 35. Electroplating is performed, and plating is grown from the bump holes 36 formed in the insulating film 32 to first form the core bumps 37a. Next, for example, using a plating solution for coating plating containing the same plating material as the plating solution for forming core bumps and having fine particles dispersed therein,
At the same time as forming the coating plating layer 37b on the surface 7a, the fine particles 39 are taken into the coating plating layer 37b. Next, as shown in FIG. 3 (2), the fine particles 39 which are taken into the coating plating layer 37b and partially exposed are selectively removed, and the bump surface is reduced by the concave portions 39a which are traces of the removal of the fine particles. Roughens. When the core bump material and the coating plating material are the same, the stress difference between the core bump and the coating plating layer is small, and therefore, the adhesion between the core bump and the coating plating layer is good, and no cracks occur in the coating plating layer. In addition, the bump surface can be roughened by the concave portion 39a which is a trace of the removal of the fine particles taken in the coating plating layer.
Furthermore, even if the bump expands due to heat in the burn-in test, the adhesion is good and no crack occurs. In the structures 4 and 9, the core bump material and the coating plating material are preferably the same, but the case where the core bump material and the coating plating material are different is also included. Table 1 shows the fine particles that can be selectively removed in the subsequent step and the removal method.

[0047]

[Table 1]

The conditions of the fine particles suitable for the constitutions 4 and 9 are shown below. (1) Insoluble in plating solution (weakly acidic) or harmless even if dissolved. For example, Fe becomes a catalyst poison and Al dissolves in the plating solution, which is not preferable. (2) It has low solubility in the plating solution and can be dispersed in the plating solution. Such materials include, for example, nickel hydroxide, calcium hydroxide, magnesium hydroxide, nickel bromide, nickel chloride and the like. However, even if the solubility is high, if plating is performed before complete dissolution, it can be incorporated into the coating plating layer in the form of particles (for example, boric acid). (3) It can be easily removed and does not erode the core bumps.
As such, for example, those soluble in water, a solvent, and the like, those soluble in a thin alkali (for example, those easily dissolved in a thin alkali without dissolving Ni core bumps),
It can be removed by wet etching or dry etching,
A material in which the core bump is not etched or the amount of the core bump etched is small (a material having a high etching selectivity between the core material and the particle material) is exemplified. Note that diamond and glass can be removed by etching.

The particle size of the fine particles, the concentration of the fine particles,
The additives of the plating solution are the same as in the first configuration.

The method 6 is an embodiment in which particles remaining in the coating plating layer and particles to be removed are mixed. in this case,
The case where the core bump material and the coating plating material are the same is preferable, but the case where the core bump material and the coating plating material are different is also included. In this case, it is preferable to select a core bump material and a coating plating material so as to improve the adhesion between the core bump and the coating plating layer. Other items are the same as in the above-described configurations 1 to 4.

According to the manufacturing method of the present invention, since the plating solution for forming the core bump and the plating solution for covering plating contain the same plating material, the core bump material and the covering plating material become the same. It is preferable because the stress difference between the coating plating layers is small, the adhesion between the core bumps and the coating plating layers is good, and cracks do not occur in the coating plating layers. As described above, in order to make the material and physical properties of the core bumps and the material and physical properties of the cover plating as similar as possible, the plating solution for forming the core bump and the plating solution for the cover plating have the same or the same main component composition. The composition is similar. Components other than the main components of the plating solution,
For example, fine particles and additives (for example, viscosity modifiers)
As for the composition and the like, both plating solutions can have different compositions. By setting the plating conditions (current density, etc.) to be the same or as close as possible, the difference in stress between the core bump and the coating plating layer can be reduced, and cracks occur in the coating plating layer, The risk of peeling is minimized. As described above, in order to reduce the stress difference between the core bump and the coating plating layer,
Means for making the plating components and the like in both plating solutions the same, and making the current values and the like during plating equal are effective.

In the above method 7, the bump itself is formed using a plating solution in which fine particles that can be selectively removed in a later step are dispersed. In this case, the fine particles are captured not only on the bump surface but also on the entire bump. The bump surface is roughened mainly by selectively removing fine particles from the bump surface layer. The merit is that the bump formation process can be simplified.

In the above configuration 5, the projecting surface of the bump of the insulating film and the surface on which the conductive pattern is formed are different surfaces, so that a contact component suitable for miniaturization can be obtained.

In the constitutions 1 to 9, the core bump and the coating plating layer may be made of the same material as the main component, and do not mean completely the same including trace components and optional components. In the structures 1 to 9, it is preferable that both the core bump and the coating plating layer are made of a hard material.

According to the above configuration 10, a contact board for semiconductor inspection which is excellent in durability, does not vary in contact resistance for each bump contact, and has excellent contact reliability can be obtained.

According to the eleventh configuration, the use of the semiconductor inspection contact board and the semiconductor inspection contact component of the present invention makes it possible to ensure the reliability of the operation of all the chips. The inspection can be performed efficiently. The “semiconductor inspection” in the above configuration 11 includes a wafer batch burn-in inspection, a chip burn-in inspection, a package burn-in inspection, and the like.

Hereinafter, with respect to the contact component for a wafer batch contact board and the contact component for general use of the present invention, matters other than those described above will be described.

The constituent material of the core bump in the contact component is not particularly limited as long as it is a metal having conductivity. Ni, Au, Ag, Cu, Sn, Co, I
n, Rh, Cr, W, Ru or an alloy mainly containing these metal components is preferable. Materials that can form high hardness core bumps are particularly preferred.

Examples of the method for forming the core bumps include an electrolytic plating method (electroplating method), an electroless plating method (chemical plating method), and a CVD method. Because core bumps can be formed,
Electroplating is preferred. In a method of forming a core bump by an electrolytic plating method, for example, after forming a conductive layer and a bump hole (a hole for forming a bump, a hole for connecting a core bump and a pad) in an insulating film, It is immersed in a plating bath to conduct electricity using the conductive layer as a cathode, and plating is grown at least in the bump hole to form a core bump. Here, when forming a core bump protruding from the surface of the insulating film, the portion in the bump hole corresponds to the root of the core bump, and corresponds to a connecting portion for connecting the core bump and the pad. When the core bump is formed only in the bump hole, the portion on the pad side corresponds to the connection portion, and the portion in contact with the electrode on the wafer corresponds to the core bump. When forming a core bump protruding from the insulating film surface,
The connection portion in the bump hole and the core bump protruding from the insulating film surface can be formed of different materials.

In the present invention, the bumps are used for electrical contact,
A contact portion provided on the surface of the insulating film for connection. It does not matter whether the bumps protrude from the surface of the insulating film. In addition, the three-dimensional shape of the bump is not limited, and may be any three-dimensional shape. For example, the cross-sectional shape of the bump may be convex, planar, or the like depending on the shape of the member to be contacted. Any of concave shapes may be used. When making contact with a flat electrode on the wafer, it is preferable that the pump be in a mushroom-like shape from the viewpoint of electrical connection reliability. The planar bump can be formed by growing a bump from a bump hole having a large diameter, for example. The concave bumps can be formed by, for example, growing bumps from a plurality of adjacent bump holes and uniting the bumps. The height and size of the bump can be freely set according to the purpose and the like.

Examples of the method for forming bump holes in the insulating film include laser processing, lithography (including etching), plasma processing, optical processing, and mechanical processing. Fine workability, degree of freedom of processing shape,
Laser processing is preferred in terms of processing accuracy and the like. In the case of laser processing, the laser light to be irradiated is preferably an excimer laser, a CO ₂ laser, a YAG laser or the like having a large irradiation output. Among them, a processing method by laser ablation using an excimer laser is a method of melting an insulating film by heat. And the like, and a high aspect ratio can be obtained, and fine and fine drilling can be performed. In the case of laser processing, a bump hole is formed by irradiating a laser beam having a focused spot on the surface of the insulating film. In other cases, using a resist pattern or the like as a mask, bump etching is performed by performing plasma etching in an atmosphere containing oxygen or a fluoride gas, dry etching such as RIE (reactive ion etching), or sputter etching. can do. Alternatively, a bump in which a hole having a desired hole shape (a round shape, a square shape, a diamond shape, or the like) is formed is brought into close contact with the surface of the insulating film, and an etching process is performed from above the mask to form a bump hole. The diameter of the bump hole is usually 5 to 200 μm, preferably 1 to 200 μm.
The thickness is preferably about 0 to 50 μm. When a bump corresponding to a solder ball is formed, the hole diameter of the bump hole is preferably about the same as that of the solder ball (about 300 to 1000 μm). Insulating film (insulating base material) for contact parts
The material is not particularly limited as long as it has electrical insulation, but preferably has flexibility together with insulation, specifically, a polyimide resin, an epoxy resin,
Thermosetting resins such as silicone resins, polyester resins, urethane resins, polystyrene resins, polyethylene resins, polyamide resins, ABS copolymer resins, polycarbonate resins, and fluorine resins, or thermoplastic resins It can be appropriately selected according to the purpose. Among these resins, a polyimide resin excellent in heat resistance, chemical resistance, mechanical strength, workability and the like is particularly preferably used. Polyimide has a large absorption in the ultraviolet region and is suitable for laser ablation processing.
Since the polyimide film has high flexibility, it can absorb variations in the height of the core bumps on the contact parts and the electrodes (contacts) on the device under test. Insulating film (insulating substrate)
Can be arbitrarily selected. In the case of a polyimide film, it is usually preferably about 5 to 200 μm, more preferably 10 to 50 μm, from the viewpoint of forming bump holes described later.

As a material of a conductive layer for forming an isolated pad or a wiring on an insulating film, any material may be used as long as it has conductivity. However, when a core bump is formed by electrolytic plating, an electrode is formed by electrolytic plating. (Conductor) is selected to be a conductive layer. Examples of such materials include single metals such as copper, nickel, chromium, aluminum, gold, platinum, cobalt, silver, lead, tin, indium, rhodium, tungsten, ruthenium, and iron, and various alloys containing these as components. (For example, solder, nickel-tin, gold-
Cobalt). The conductive layer may have a single-layer structure composed of the above-described metal layers, or may have a laminated structure. For example, a laminated structure in which a base film of Cr or Ni, a Cu film, a Ni film, and an Au film are sequentially laminated from the insulating film side can be used. In this case, a Cr underlayer or a Ni underlayer is preferable because it improves the adhesion to an insulating film such as a polyimide film. The Cu film becomes a main component of the conductive layer. The Ni film has a role of preventing oxidation of Cu, a role of improving the mechanical strength of the conductive layer, and a role as an intermediate layer for forming an Au layer on the outermost surface of the conductive layer. The Au film is formed for the purpose of preventing oxidation of the conductive layer surface and reducing the contact resistance. Note that a gold-cobalt alloy, rhodium, palladium, or the like can be used instead of the Au film. In particular, using a gold-cobalt alloy increases the mechanical strength of the isolated pad.

As a method for forming these conductive layers, a film forming method such as a sputtering method or a vapor deposition method, a plating method such as electroless plating or electrolytic plating, or a method using a metal foil such as a copper foil is used. can do. Further, a conductive layer can be formed by a combination of a sputtering method and a plating method. For example, after a thin film is formed by a sputtering method, a thick film can be formed by plating. Note that a Ni film or an Au film on a Cu film requires mechanical strength and is preferably formed by a plating method (electroless plating, electrolytic plating) because it needs to be relatively thick. The thickness of the conductive layer is not particularly limited, and can be set as appropriate.

The isolated pads and wirings on the insulating film can be formed, for example, by patterning a conductive layer formed on the entire surface. Specifically, for example, after forming a resist pattern on the conductive layer formed on the entire surface of the insulating film, the exposed conductive layer is etched to obtain a desired isolated pad or the like.

The ring in the contact part may be any support frame that can support the insulating film in a stretched state, and includes a support frame of any shape such as a circle and a square. Rings in contact parts for semiconductor inspection such as contact parts for wafer batch contact board are made of, for example, Si.
It is preferably formed of a material having a low coefficient of thermal expansion such as C, SiN, SiCN, invar nickel, or a material having a coefficient of thermal expansion close to that of Si and having high strength (for example, ceramics, low-expansion glass, metal, etc.). .

[0066]

The present invention will be described in detail below with reference to examples and comparative examples, but the present invention is not limited to these examples.

(Example 1)

Contact for wafer batch contact board
A method for manufacturing a contact component for a wafer batch contact board will be described with reference to FIGS. First, as shown in FIG. 6A, an aluminum plate 1 having a high flatness is used.
A silicon rubber sheet 102 having a uniform thickness of 5 mm is placed on the surface 01. On the other hand, for example, after a polyimide precursor is cast on the copper foil 104, the polyimide precursor is heated and dried and cured, and the copper foil 104 (5 to 50 μm in thickness) and the polyimide film 105 (12
To a thickness of 50 μm).
Prepare The constituent material, forming method, thickness and the like of the laminated film 103 can be appropriately selected. For example, as an insulating film, an epoxy resin film, having a thickness of 0.1 to 0.1 mm.
A silicon rubber sheet of about 5 mm can be used. Also,
For example, the laminated film 103 can be formed by forming copper on a polyimide film by a sputtering method or a plating method. Further, a film having a structure in which a plurality of conductive metals are sequentially formed on one surface of a film and a conductive metal layer having a laminated structure is formed on one surface of the film may be used. A thin Ni film (not shown) may be formed between the polyimide and Cu for the purpose of improving the adhesion between them and preventing film contamination.

Next, as shown in FIG. 6A, a laminated film 103 having a structure in which a copper foil and a polyimide film are bonded on the silicon rubber sheet 102 is spread uniformly with the copper foil side down. To adsorb. At this time, by utilizing the property that the laminated film 103 is adsorbed on the silicon rubber sheet 102, the air layer is adsorbed while being expelled so as not to generate wrinkles or bending, so that the air layer is adsorbed in a uniformly developed state.

Next, as shown in FIG.
The thermosetting adhesive 107 is thinly and uniformly applied to the bonding surface of the circular SiC ring 106 having a thickness of about 2 mm and a thickness of 50 to 10 mm.
It is applied with a thickness of about 0 μm and placed on the laminated film 103. Here, as the thermosetting adhesive 107, an adhesive that cures at a temperature higher by 0 to 50 ° C. than the set temperature of the burn-in test of 80 to 150 ° C. is used. In this embodiment, the bond high chip HT-100L (base agent: curing agent = 4: 1)
(Manufactured by Konishi Co., Ltd.) was used.

Next, as shown in FIG. 6B, a highly flat aluminum plate (about 2.5 kg in weight) was placed on the weight plate 11.
As No. 2, it is placed on the SiC ring 106.

Next, as shown in FIG. 6 (3), after the above-mentioned preparatory process, the burn-in test was performed at a set temperature (80 to 80 ° C.).
150 ° C) or higher (for example, 200 ° C, 2.5 hours)
To bond the laminated film 103 and the SiC ring 106 together. At this time, the silicone rubber sheet 102
Since the coefficient of thermal expansion of the laminated film 103 is larger than the coefficient of thermal expansion of the laminated film 103, the laminated film 103 adsorbed on the silicon rubber sheet 102 thermally expands as much as the silicon rubber sheet 102. That is, since the thermal expansion of the silicon rubber sheet is larger than when the laminated film 103 is simply heated at a temperature higher than the set temperature (80 to 150 ° C.) of the burn-in test, the polyimide film expands more due to this stress. In a state where the tension is large, the thermosetting adhesive 107 is cured, and the laminated film 103 and the SiC ring 1 are hardened.
06 is adhered. Further, since the laminated film 103 on the silicon rubber sheet 102 is adsorbed in a state where the laminated film 103 is uniformly developed without wrinkling, bending, or loosening, the laminated film 103 is not creased, bent, or loosened.
The laminated film 103 can be bonded to 6. Further, since the silicon rubber sheet 102 has high flatness and elasticity, the laminated film 103 can be uniformly and uniformly bonded to the bonding surface of the SiC ring 106.
When the thermosetting adhesive is not used, the film shrinks and the tension is weakened, and the curing time of the adhesive varies depending on the location, so that the adhesive cannot be uniformly and uniformly bonded to the bonding surface of the SiC ring.

Next, the product after the heating and bonding step is cooled to room temperature and contracted to a state before heating. afterwards,
An intermediate component having a structure in which the laminated film 103 outside the SiC ring 106 is cut and removed along the outer periphery of the SiC ring 106 with a cutter, and the laminated film is attached to the SiC ring with tension as shown in FIG. Get. Next, the copper foil 104 prepared above and the polyimide film 1
05 of the laminated film 103 having a structure in which
4, a Ni film (not shown) is formed with a thickness of 0.2 to 0.5 μm by electrolytic plating.

Next, as shown in FIG. 7B, a bump hole 108 having a diameter of about 10 to 50 μm is formed at a predetermined position of the polyimide film 105 by using an excimer laser.
To form Next, plasma treatment is performed on the inside of the pump hole 108 and the surface of the polyimide film 105 to remove a polyimide-decomposed substance mainly composed of carbon, which is generated by laser processing and adheres to the bump hole and its periphery.

Next, in order to prevent the copper foil 104 side from being plated, a protective film such as a resist is coated on the entire surface of the copper foil 104 side except for a part used as an electrode by about 2 to 3 μm.
To protect it (not shown). Immediately, one of the electrodes is connected to the copper foil 104 and the polyimide film 1
On the 05 side, Ni electrolytic plating (current density: 0.3 to 60 A / dm ² with a nickel sulfamate plating solution) is performed. Note that a brightener, boric acid, nickel bromide, a pH adjuster, and the like were added to the plating solution. After electrolytic plating, the plating is grown so as to fill the bump holes 108 shown in FIG. 7 (3), and then spreads isotropically and grows substantially hemispherically when reaching the surface of the polyimide film 105, and has a hardness of 150 to 150. Core bump 1 made of Ni of about 600 Hv
09 is formed. The core bump height was about 5 to 40 μm.

Subsequently, a plating solution for coating plating (graphite particle concentration: 1 to 50 g) in which graphite (particle diameter: about 0.1 to 5 μm) is dispersed as fine particles in a plating solution having the same composition as the plating solution for forming the core bumps. / 100ml)
And plating conditions (current density: 0.3 to 60 A / dm.
² ) as close as possible, as shown in FIG. 4, a hard coating plating layer 37b (0.5 to 10 μm thick) is formed on the surface of the core bump 37a, and at the same time fine particles 38 are taken into the coating plating 37b layer. . The other parts in FIG. 4 are assigned the same reference numerals as those in FIG.

Next, after the protective film on the copper foil 104 side is peeled off, a new resist is applied to the entire surface of the copper foil 104 side, and a resist pattern (not shown) is formed on a portion where an isolated pad or the like is to be formed. . Next, the thin Ni film and Cu film are etched with a ferric chloride aqueous solution or the like, rinsed well, and then the resist is peeled off to form an isolated pad 110 or the like as shown in FIG. .

Through the above steps, a contact component for a wafer batch contact board was manufactured.

Example 2 A wafer was prepared in the same manner as in Example 1 except that Ni-plated glass powder (particle size: about 0.1 to 5 μm) was mixed as fine particles instead of graphite. A contact component for a batch contact board was manufactured.

(Example 3) Contact components for a wafer batch contact board in the same manner as in Example 1 except that graphite fine particles were incorporated into the coating plating layer of Example 1, and then the graphite fine particles were removed by ashing. Was prepared. The situation at this time is shown in FIG. In FIG. 5, the same reference numerals are given as in FIG. 3 and the description is omitted.

Example 4 As fine particles, glass powder (particle size: about 0.1 to 5 μm) was used instead of graphite.
Was formed in the same manner as in Example 1 except that a plating solution having the same composition as the plating solution for forming the core bumps was used, and the coating plating (thickness: 0.5 -5 μm), and a contact component for a wafer batch contact board was prepared in the same manner as in Example 1.

Comparative Example 1 A contact component for a wafer batch contact board was produced in the same manner as in Example 1 except that no coating plating layer was formed on the surface of the core bump.

Comparative Example 2 A contact component for a wafer batch contact board was produced in the same manner as in Comparative Example 2 except that the surface of the core bump was polished with ceramic.

(Comparative Example 3) A contact part for a wafer batch contact board was produced in the same manner as in Example 1 except that the surface of the core bump was plated with a rough rhodium coating instead of the Ni coating plating.

Assembling Step As shown in FIG. 8, anisotropic conductive rubber sheet 2 is provided at a predetermined position on multilayer wiring board 10 for a wafer batch contact board.
No. 0 was bonded, and further, the contact component 30 manufactured above was bonded, thereby completing a wafer batch contact board.

Burn-in test The electrodes on the wafer and the isolated bumps of the contact parts were aligned, fixed with a chuck, and then placed in a burn-in apparatus and tested in an operating environment at 125 ° C. The evaluation target is that 400 chips of 64 MDRAM are formed and 120
An 8-inch wafer having Al electrodes at 00 locations was used, and the contact was repeated. Table 2 shows the results.

[0087]

[Table 2]

When the contact board of Comparative Example 1 was used, since the bump surface of the contact component was not roughened, the average contact resistance was high, and the oxide film on the Al electrode could not be broken. The number of pins at which the maximum contact resistance becomes Δ also increased. However, as the contact was repeated, the number of open pins decreased to some extent. When using the contact board of Comparative Example 2,
Since all bump surfaces could not be roughened, there were bumps whose bump surfaces were not roughened, and the number of open pins was 30. When the contact board of Comparative Example 3 was used, 30 bumps fell off due to the root of the core bump being corroded at the time of plating with rhodium. In addition, cracks occurred in the rhodium-plated plating on the 16 bumps. Further, when a tape peeling test was performed, 100 or more bumps fell off. On the other hand, when the contact boards of Examples 1 to 4 are used,
The average contact resistance was low, the maximum resistance was low, and there were no defective bumps. In addition, when the bump surface in the contact component of Example 1 was roughened by repeating adsorption and desorption with the ceramic plate, the average contact resistance was reduced to 0.4 to 0.5Ω.

(Embodiment 5)
After taking in the glass powder (particle diameter: about 0.1 to 5 μm) and graphite fine particles, the contact for wafer batch contact board was performed in the same manner as in Example 3 except that only the graphite fine particles were selectively removed by ashing. Parts were made. As a result, the same as in Example 3 was confirmed.

(Embodiment 6) Instead of the Ni core bump and the Ni-coated plating layer, a NiCo alloy core bump and a Ni
A contact component for a wafer batch contact board was prepared in the same manner as in Examples 1 to 4, except that the plating was performed using a Co alloy coating. As a result, the same as in Examples 1 to 4 was confirmed.

(Embodiment 7) Instead of the Ni core bump and the Ni-coated plating layer, a NiCo alloy core bump and a Ni
A contact part for a wafer batch contact board was produced in the same manner as in Example 2 except that a glass powder coated with a NiCo alloy was used instead of a glass powder coated with a Ni alloy as a Co alloy coated plating layer. did. As a result, the same as in Example 2 was confirmed.

Example 8 In the same manner as in Example 1 except that diamond and carbon particles having a particle size of about 0.1 to 5 μm were mixed into the coating plating solution instead of graphite as fine particles. Thus, a contact component for a wafer batch contact board was produced. As a result, the same as in Example 1 was confirmed.

(Example 9) As fine particles, a particle diameter of 0.1 to 5 μm was used instead of Ni-coated plated glass powder.
A batch contact board for wafers in the same manner as in Example 2 except that fine particles obtained by plating Ni coating on the surface of each particle of diamond, SiO ₂ , Ti, W, and Ta of about m were respectively mixed into the coating plating solution. Contact parts were prepared. As a result, the same as in Example 2 was confirmed.

Example 10 A contact part for a wafer batch contact board was produced in the same manner as in Example 3 except that resin particles were mixed as fine particles instead of graphite, and the resin particles were removed with a solvent. did. As a result, the same as in Example 3 was confirmed.

Example 11 Contact components for a wafer batch contact board were prepared in the same manner as in Example 3 except that water-soluble particles were mixed as fine particles instead of graphite, and the water-soluble particles were removed by washing with water. Was prepared. As a result, the same as in Example 3 was confirmed.

(Example 12) As a contact part, 8
A bump having an inch diameter and a bump count of about 10,000 pins was prepared, and the bump surface was roughened by pressing a hard material such as a ceramic plate. As a result, the same as in Example 1 was confirmed. Further, it was confirmed that the contact resistance did not vary for each bump contact, and that the contact reliability was excellent.

The present invention is not limited to the above embodiment, but can be modified as appropriate.

For example, on the bump surface, if necessary,
Further, various metal coatings may be formed. For example, for the purpose of improving electrical contact and connection, A
A metal coating such as u, Au-Co, Rh, Pt, Pd, Ag, or an alloy mainly containing these metal components may be further formed. The metal coating may be a single layer or a multilayer.

The wafer batch contact board of the present invention comprises:
In addition to the burn-in test, the present invention can be used for a part of product inspection (electrical characteristic test) conventionally performed by a probe card and for wafer level batch CSP inspection. Further, the contact component of the present invention is used for CPS inspection, BGA inspection, IC board inspection having solder balls as contacts,
Tape carrier for 1-chip burn-in inspection, burn-in probe card, or membrane probe card, wafer batch-in board, wafer level package C
It can be used for PS inspection, etc.

[0100]

According to the present invention, the bump has a simple structure so that the bump is prevented from falling off, and even if the number of bumps increases, uniform bumps can be formed. It is possible to provide a contact component capable of preventing chipping and a method of manufacturing the same. Further, it is possible to provide a method for manufacturing a contact component that can be easily manufactured without increasing costs and steps.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a main part schematically showing one embodiment of a contact component for a wafer batch contact board according to the present invention.

FIG. 2 is a cross-sectional view of a principal part schematically showing another embodiment of the contact component for a wafer batch contact board according to the present invention.

FIG. 3 is a cross-sectional view of a principal part schematically showing another aspect of the contact component for a wafer batch contact board according to the present invention.

FIG. 4 is a cross-sectional view of a principal part schematically showing one aspect of a bump according to an example.

FIG. 5 is a cross-sectional view of a principal part schematically showing one aspect of a bump according to an example.

FIG. 6 is a cross-sectional view showing a part of the manufacturing process of the contact component according to the embodiment of the present invention.

FIG. 7 is a fragmentary cross-sectional view showing part of the manufacturing process of the contact component according to the embodiment of the present invention.

FIG. 8 is a cross-sectional view schematically showing a wafer batch contact board.

[Explanation of symbols]

 Reference Signs List 10 multilayer wiring board 20 anisotropic conductive rubber sheet 21 anisotropic conductive rubber 30 contact component 31 ring 32 insulating film 33 bump 34 pad 35 conductive layer 37a core bump 37b coating plating layer 37c coating plating layer 38 fine particles 39 fine particles 39a Trace (recess) from which fine particles were removed 40 Silicon wafer 101 Aluminum plate 102 Silicon rubber sheet 103 Laminated film 104 Copper foil 105 Polyimide film 106 SiC ring 107 Thermosetting adhesive 108 Bump hole 109 Core bump 110 Pad 112 Weight plate

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2G003 AA07 AA10 AB01 AC01 AG07 AG12 2G011 AA03 AA21 AB08 AB10 AC14 AE03 4K024 AA03 AB02 AB03 AB08 AB12 BB09 BB10 4M106 AA01 AD26 BA01 CA59 DD01

Claims (11)

[Claims] 1. A contact component having at least a metal bump supported so as to protrude from an insulating film and connected to a predetermined conductive path, wherein the bump is formed by dispersing fine particles at least in a surface portion thereof. A contact component having a coating layer on a roughened surface. 2. A contact component having at least a metal bump supported so as to protrude from an insulating film and connected to a predetermined conductive path, wherein the bump has at least a surface layer portion compatible with a metal constituting the bump. A contact part characterized in that the surface is roughened by dispersing fine particles coated with a good material. 3. A contact component having at least a metal bump supported so as to protrude from an insulating film and connected to a predetermined conductive path, wherein the bump has non-metallic fine particles dispersed in at least a surface portion thereof. A contact component characterized in that the surface is roughened by the process. 4. A contact component having at least a metal bump supported so as to protrude from an insulating film and connected to a predetermined conductive path, wherein the bump has a surface formed by a concave portion which is a mark from which fine particles have been removed. A contact part characterized by being roughened. 5. A bump protrudes from one surface of an insulating film attached to a ring and has a conductive pattern on the other surface, wherein the bump and the conductive pattern are formed in a through hole provided in the insulating film. The contact component according to any one of claims 1 to 4, wherein the contact component is electrically connected by a conductive material filled in the contact component. 6. The method for manufacturing a contact component according to claim 1, wherein the bump is formed by plating and growing using a plating in which fine particles are dispersed, thereby forming a roughened surface. And a step of plating and growing a coating layer on the converted surface. 7. The method of manufacturing a contact component according to claim 2, wherein the bump is formed by plating using a plating in which fine particles covered with a material compatible with a metal forming the bump are dispersed. A method for manufacturing a contact component, characterized by being formed by a method having at least a step of forming a roughened surface. 8. The method for manufacturing a contact component according to claim 3, wherein the bump has at least a step of forming a roughened surface by plating and growing using a plating in which non-metallic fine particles are dispersed. A method for manufacturing a contact component, characterized by being formed by the method. 9. The method of manufacturing a contact component according to claim 4, wherein the bumps are grown by plating using plating in which fine particles that can be selectively removed in a later step are dispersed, and then the bumps are formed. A method for manufacturing a contact component, the method comprising at least a step of selectively removing a component. 10. A contact board for semiconductor inspection used for testing a semiconductor device on a wafer, wherein the contact component according to claim 5 and wiring are laminated via an insulating layer. A multilayer wiring board for semiconductor inspection having a structure in which upper and lower wirings are connected via contact holes formed in the semiconductor device; and an anisotropic conductive rubber sheet for electrically connecting the multilayer wiring board to the contact components. A contact board for semiconductor inspection characterized by the above-mentioned. 11. A semiconductor inspection method using the contact component according to claim 1 for semiconductor inspection.