JP4083350B2 - Manufacturing method of membrane ring with bumps - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a membrane ring with bumps that handles a contact portion of a contact board or the like.
[0002]
[Prior art]
  For contact boards used to inspect elements such as semiconductor devices, a membrane ring with bumps that handle the contact part is used as the part that directly contacts the element under test.TheIt is.
  For example, in a probe card used for an electrical characteristic test of a semiconductor chip, bumps of about 600 to 1000 pins are formed on the membrane corresponding to pads formed on the periphery or center line of the semiconductor chip. .
  Further, in a burn-in board (contact board) (Japanese Patent Laid-Open No. 7-2331019) used for collectively inspecting a plurality of semiconductor devices formed on a wafer, the number of chips of the probe card is multiplied by the number of chips. A number of bumps are formed on the membrane. The membrane is usually formed by bonding a film of polyimide or the like in a state of being spread on a ring, and a bump is formed on one surface of the film and a pad is formed on the other surface. The pads on the membrane are connected to the pads on the multilayer wiring board via an anisotropic conductive rubber sheet.
[0003]
The manufacturing method of the membrane ring with bumps is shown below.
FIG. 4 is a cross-sectional view showing the manufacturing process of the membrane ring with bumps.
First, after casting a polyimide precursor to a thickness of about 25 μm on a copper foil 2 having a thickness of about 18 μm, the polyimide precursor is heated and dried and cured to bond the copper foil 2 and the polyimide film 1 together. A film 8 is formed (FIG. 4A). Next, a film 8 having a structure in which a copper foil and a polyimide film are bonded together is adsorbed onto a silicon rubber sheet 14 (not shown) in a state where the film 8 is uniformly developed with the copper foil 2 side down.
Next, a thermosetting adhesive (not shown) is thinly and evenly applied (50 to 100 μm) to the bonding surface of the circular SiC ring 11 having a diameter of about 8 inches and a thickness of about 2 mm, and is placed on the film 8. Here, as a thermosetting adhesive, what hardens | cures at the temperature 0-50 degreeC higher than the preset temperature (80-150 degreeC) of a burn-in test is used.
Further, a flat aluminum plate (having a weight of about 2.5 kg) (not shown) is placed on the ring as a weight.
After finishing the above preparation step, the film 8 and the ring 11 are bonded by heating at a temperature (200 ° C., 2.5 hours) higher than the set temperature (80 to 150 ° C.) of the burn-in test.
After finishing the heating and bonding step, the product is cooled to room temperature and contracted to a state before heating. The film 8 outside the ring 11 is cut and removed along the outer periphery of the ring 11 with a cutter (FIG. 4B).
[0004]
A bump hole 1a having a diameter of about 30 μm is formed at a predetermined position of the polyimide film 1 using an excimer laser (FIG. 4C).
Next, after protecting the surface of the copper foil 2 from being plated, one of the electrodes for plating is connected to the copper foil 2 to perform electroplating of Ni. After the plating grows so as to fill the bump hole 1a and reaches the surface of the polyimide film 1, it spreads isotropically and grows into a substantially hemispherical shape to form a bump 3 made of a hard Ni alloy (FIG. 4). (D)).
A resist is applied on the copper foil 2, and a resist pattern 4 is formed by exposure and development (FIG. 4E).
Using the resist pattern 4 as a mask, the copper foil 2 is etched to form a pad 5 having a diameter of about 150 μmφ (FIG. 4F).
After removing the resist, in order to stabilize the contact resistance, a gold plating 6 having a thickness of about 500 mm is performed on the surface of the pad 5 by electroless plating (FIG. 4G).
A membrane ring with bumps is manufactured through the above steps.
[0005]
[Problems to be solved by the invention]
However, in the above method, since the film 8 having a structure in which copper foil (conductive metal film) and polyimide (insulating film) are bonded together is heat-bonded to the ceramic ring 11 with a thermosetting adhesive, When the temperature is returned to normal temperature, the shrinkage tension of the copper foil is applied in the center direction of the ring. At that time, it is considered that the ceramic ring is contracted by the tension of the copper foil.
After that, by etching the copper foil to form the pad, the tension applied to the center direction by the copper foil is released, and the ceramic ring tries to return to its original shape. In order to follow the movement of returning to the original, the pad on the polyimide film which has become an isolated pattern is pulled toward the outer peripheral portion, and there is a problem that the accuracy of the bump and pad position deteriorates. In particular, in recent years, the pitch of semiconductor wafers has been narrowed (160 μm or less), and the requirement of pad position accuracy has become severe (within ± 10 μm), and it has not been possible to meet the recent requirements.
Further, the positional displacement of the pad caused a positional displacement with the anisotropic conductive rubber for connection to the multilayer wiring board, a short circuit occurred, and an inspection failure occurred in the burn-in test.
[0006]
The present invention has been made under the above-described background, and an object thereof is to provide a method of manufacturing a membrane ring with bumps that can solve the above-described problems.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is configured as follows.
[0008]
(Structure 1) A method for manufacturing a bumped membrane ring which takes charge of a contact portion of a contact board, wherein a conductive metal film is formed on the surface of an insulating film affixed on the ring with a thermosetting adhesive at a predetermined temperature. Forming, and
Forming bump holes at predetermined positions of the insulating film, protecting the surface of the conductive metal film, connecting one of the electrodes for plating to the conductive metal film, and performing electroplating to form bumps; And after forming a resist film on the conductive metal film, a step of forming a resist pattern by exposure and development, and selectively etching the conductive metal film using the resist pattern as a mask, Producing a membrane ring with bumps, comprising: a step of forming an isolated pad made of a conductive metal film material at a position corresponding to the bump on the insulating film; and a step of removing the resist film. Method.
[0009]
(Structure 2) The manufacturing method of the membrane ring with bumps according to Structure 1, wherein the insulating film is stuck on the ring in a state of being expanded more than a state of being thermally expanded at the predetermined temperature. .
[0010]
(Structure 3) The manufacturing method of the membrane ring with bumps according to Structure 1 or 2, wherein the conductive metal film is formed at a temperature equal to or lower than the predetermined temperature.
[0011]
(Structure 4) The method for producing a bumped membrane ring according to Structure 3, wherein the conductive metal film is formed at an ambient temperature in an environment where the bumped membrane ring is used.
[0012]
(Structure 5) The structure according to any one of Structures 1 to 4, wherein a conductive metal film is formed on the surface of the insulating film after the treatment for improving the adhesion of the surface of the insulating film is performed. Of manufacturing membrane ring with bumps.
[0013]
(Structure 6) The method for manufacturing a membrane ring with bumps according to any one of structures 1 to 5, wherein the bump hole is formed by irradiating the insulating film with a laser beam and removing it.
[0014]
[Action]
In the method for producing a membrane ring with bumps according to the present invention, the conductive thin film is formed after the insulating film is bonded to the ring, so the pad (isolated pattern) is formed by etching the conductive thin film. In doing so, since the tension release of the conductive thin film does not occur, the membrane film does not extend in the outer peripheral direction, the positional accuracy of the pads and bumps generated by the tension release of the conductive thin film does not occur, Therefore, the positional accuracy of the pads and bumps is high (matches the design value), and a highly accurate membrane ring with bumps can be obtained. For this reason, for example, no defective inspection occurs in the burn-in test.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
In the method for manufacturing a membrane ring with bumps according to the present invention, the conductive metal film is formed by applying electroplating to bump holes formed by irradiating a polyimide film with laser light, and multilayer wiring. It becomes the material of the pad for connecting to the substrate. Note that the electrode and the pad material used to form the bump may be the same material or different materials.
[0016]
The material, formation method, thickness, and the like of the conductive metal film can be selected as appropriate.
Examples of the material of the conductive metal film that becomes an electrode when forming the bump include Ni / Cu, Cu, and Cr / Cu. Ni / Cu is preferred from the viewpoint of pad etching. Moreover, Cr / Cu is preferable in terms of adhesion to the polyimide film.
Examples of the conductive metal film used as the pad material include Cu, Au, and Al. Cu is preferable from the viewpoint of good conductivity, low cost, and easy formation.
[0017]
As a method for forming these conductive metal films, a film forming method such as sputtering or vapor deposition, or a plating method such as electroless plating or electroplating can be used. In addition, since the mechanical strength is requested | required of the electroconductive metal film used as the material of a pad, it is desirable to form by the plating method (electroless plating, electroplating) from the necessity of being comparatively thick film.
[0018]
The thickness of the conductive metal film for an electrode may be a thickness that does not cause a hole by laser light (about 100 to 5 μm). Further, the thickness of the conductive metal film for the pad is preferably about 10 μm or more from the viewpoint of strength and contact property.
[0019]
A protective film is usually formed on the surface of the pad for the purpose of further improving the mechanical strength of the pad. As a material for the protective film, a noble metal such as Ni, Au, Au—Co, Rh, or Pd is used for the purpose of reducing the resistance value. The protective film may be a single layer of these materials, or may have a multi-layer structure.
[0020]
Preferably, a Ni / Au multi-layer structure is used from the viewpoint of easy manufacture. In this case, Ni serves as an intermediate layer for forming the Au layer on the pad surface, and is formed for the purpose of improving the pad strength, and the film thickness is preferably about 0.5 to 2 μm. Au is formed for the purpose of preventing oxidation of the pad surface and lowering the contact resistance with the anisotropic conductive rubber (PCR), and the film thickness is preferably about 0.1 to 0.5 μm. The method for forming the protective film is not particularly limited. For example, a Pd catalyst is attached to the Cu pad surface, and Ni plating is formed by electroless plating. Thereafter, an Au film is formed by substituting a part of Ni with Au (Ni substitution type Au plating) or by growing Au on Ni (self-catalytic type Au plating).
[0021]
The method for attaching the insulating film in a ring shape with a thermosetting adhesive is not particularly limited. However, when an insulating film is bonded to the ring, no wrinkling, bending, or slack is generated.
For example, an insulating film is expanded from a thermally expanded state (ratio) at a predetermined temperature (in the case of a membrane ring with bumps used for a burn-in test, a temperature 0 to 50 ° C. higher than 50 to 180 ° C.). In this state, it is preferable to adhere and bond on the ring. As a more specific method, the method described in the prior application (Japanese Patent Application No. 9-227293) by the applicant of the present application, that is, the insulating film, the insulating film into a sheet having a higher coefficient of thermal expansion. After the adsorption, the insulating film is heated to a predetermined temperature to thermally expand the insulating film as much as the sheet. This makes it possible to stick the insulating film to the ring in a more thermally expanded state than when the insulating film is simply heated at a predetermined temperature. In addition to this method, the insulating film may be stretched and pasted by a mechanical method as long as it is a method that is stuck on the ring in a state of being expanded more than the state of thermal expansion at the predetermined temperature. I do not care.
[0022]
The material, forming method, thickness and the like of the insulating film (sheet) can be selected as appropriate. For example, in the case of an insulating film, a polyimide film having a thickness of about 25 μm (12 to 50 μm) can be used. The insulating film can be formed by a coating method, or a commercially available film or sheet (for example, a thickness of 0.1 to 0.5 mm) can be used.
[0023]
The bump is formed by electroplating. The material for forming the bump is not particularly limited, and examples thereof include Ni, Au, Rh, and Pd. Ni is preferable from the viewpoint of good conductivity, low cost, and easy formation. Further, Au, Rh, and Pd can be formed on the bump surface by a plating method or the like in order to stabilize the contact resistance.
[0024]
In the present invention, it is preferable that the conductive metal film is formed at a temperature not higher than the temperature at which the insulating film and the ring are heated. This is because the insulating film loosens when it approaches the temperature at which the insulating film is attached, and when the conductive metal film is formed in this state, the conductive metal film loosens.
More preferably, the conductive metal film is preferably formed at an ambient temperature in an environment where a membrane ring with bumps is used. Thereby, the positional accuracy of the bump at the time of use can be made highly accurate, and the extension of the pad (in the film plane) due to the extension of the film can be minimized. When the membrane ring with bumps is used as a burn-in board, it is preferable to form a film within the range of the set temperature (80 to 150 ° C.) of the burn-in test.
[0025]
In this invention, after performing the process which improves the adhesiveness of the surface of the said insulating film, it is preferable to form a conductive metal film on the surface of this insulating film. For example, plasma ashing the surface of the insulating film can roughen the surface and improve the adhesion of the conductive metal film.
[0026]
In the present invention, it is preferable to form the bump holes by laser processing because the processing is easier than other forming methods (for example, etching (dry, wet) methods). The laser to be used is not particularly limited.₂A laser, a YAG laser, an excimer laser, etc. are mentioned. It is preferable to use an excimer laser because fine holes can be processed and the cross section of the holes is smooth. CO₂This is because a laser or YAG laser forms holes by thermal (mechanical) processing, whereas an excimer laser processes (forms holes) by decomposing molecules by photochemical reaction.
[0027]
The use of the membrane ring with bumps of the present invention is not particularly limited, but can be used as a contact part in, for example, a probe card or other wiring board other than the burn-in board.
[0028]
【Example】
  Examples of the present invention will be described below.
Example 1
(Production of membrane ring)
  First, as shown in FIG. 1A, a silicon rubber sheet 14 having an average thickness of 5 mm is placed on an aluminum plate 13 having a high flatness.
  Next, a polyimide film 7 having a thickness of about 25 μm is adsorbed on the silicon rubber sheet 14 in a state of being uniformly developed. At this time, by utilizing the property that the polyimide film 7 is adsorbed on the silicon rubber sheet 14, the air layer is expelled and adsorbed so as not to cause wrinkles or bending, and adsorbed in a uniformly developed state.TheMake it.
  Next, the thermosetting adhesive 12 is thinly and evenly applied (50 to 100 μm) to the adhesive surface of the circular SiC ring 11 having a diameter of about 8 inches and a thickness of about 2 mm, and placed on the polyimide film 7. Here, as the thermosetting adhesive 12, an adhesive that cures at a temperature 0 to 50 ° C. higher than the set temperature (80 to 150 ° C.) of the burn-in test is used. In this example, Bond High Chip HT-100L (main agent: curing agent = 4: 1) (manufactured by Konishi Co., Ltd.) was used.
  Further, an aluminum plate (having a weight of about 2.5 kg) (not shown) with high flatness is placed on the ring 11 as a weight. The polyimide film 7 and the ring 11 are bonded by heating the preliminarily prepared step at a temperature (200 ° C., 2.5 hours) equal to or higher than the set temperature (80 to 150 ° C.) of the burn-in test (FIG. 1 ( b)).
[0029]
At this time, since the thermal expansion coefficient of the silicon rubber sheet 14 is larger than the thermal expansion coefficient of the polyimide film 7, the polyimide film 7 adsorbed on the silicon rubber sheet 14 thermally expands by the same amount as the silicon rubber sheet 14. That is, the polyimide film 7 is more thermally expanded than when the polyimide film 7 is simply heated at a temperature equal to or higher than the set temperature (80 to 150 ° C.) of the burn-in test. With this large tension, the thermosetting adhesive 12 is cured and the polyimide film 7 and the ring 11 are bonded. Further, since the polyimide film 7 on the silicon rubber sheet 14 is adsorbed in a state where the polyimide film 7 is uniformly spread without wrinkles, bends and slack, the polyimide film 7 is bonded to the ring 11 without wrinkles, bends and slack. can do. Furthermore, since the silicon rubber sheet 14 has high flatness and elasticity, the polyimide film 7 can be evenly adhered to the adhesion surface of the ring 11 without unevenness.
In addition, when a thermosetting adhesive is not used, the film shrinks and the tension is weakened. In addition, since the curing time of the adhesive varies depending on the location, the ring cannot be evenly and evenly bonded.
[0030]
  After finishing the heating and bonding process, cool to room temperature and shrink to the state before heatingTheMake it. The polyimide film 7 outside the ring 11 is cut and removed along the outer periphery of the ring 11 with a cutter (FIG. 1C).
  Next, on the polyimide film 7 affixed on the ring 11, sputtering was performed in an argon gas atmosphere using a Ni sputtering target to form a Ni film 15, which is a conductive metal, with a thickness of about 500 mm (FIG. 1D )). This Ni film is a film for an electrode for growing a Cu plating layer to be formed next, or a film for an electrode for forming a bump in a bump hole by electroplating. Next, one of the plating electrodes was connected to the Ni film 15, and a Cu plating layer 16 having a thickness of about 18 μm as a conductive metal was formed on the Ni film 15 by electroplating (FIG. 1 (e)). . In addition, the temperature at the time of formation of these Ni film | membrane 15 and Cu plating layer 16 was about 70-80 degreeC.
[0031]
(Bump formation process)
As shown in FIG. 2, a bump hole 1 a having a diameter of about 30 μmφ is formed at a predetermined position on the polyimide film 7 using an excimer laser (FIGS. 2A and 2B).
Next, after the surface of the Cu plating layer 16 is protected by a plating jig so as not to be plated, one of the plating electrodes is connected to the Ni film 15 and Ni electroplating is performed on the bump hole 1a. After the plating grows so as to fill the bump hole 1a, when it reaches the surface of the polyimide film, it isotropically spreads and grows into a substantially hemispherical shape, and a bump 3 made of a hard Ni alloy is formed (FIG. 2 ( c)). In this case, plating is performed until the height of the bump is about 20 to 30 μm. In order to stabilize the contact resistance (contact resistance), an electroplating layer (thickness: 1 to 2 μm) (not shown) made of a noble metal such as Au, Rh, or Pd may be formed on the surface of the bump.
[0032]
The resist film 4 is applied so as to cover the Cu plating layer 16 and the bumps formed in the above process, and the resist on the portion where the pad is to be formed (Cu plating layer 16 side) is removed by exposure and development to form a resist pattern 41 (FIG. 2D).
Next, using the resist pattern 41 as a mask, the exposed portions of the Cu plating layer 16 and the Ni film 15 are removed by etching with a ferric chloride aqueous solution (concentration 40 Baume), and then the resist pattern 41 and the resist film 4 are peeled off. Then, a Cu pad is formed (FIG. 2E).
Next, the bump surface is protected with a resist or the like (not shown), and Ni plating (thickness 1 μm) and Au plating (thickness 0.3 μm) are sequentially performed on the Cu pad surface that has become an isolated pattern by electroless plating. Then, an Au plated pad is formed (FIG. 2F).
The membrane ring with bumps is manufactured through the above steps.
[0033]
(Comparative Example 1)
  In the manufacturing process of the bumped membrane ring of Example 1 described above, the conductive metal film was formed on the polyimide sheet before bonding the polyimide sheet and the silicon rubber sheet.ExceptProduced a membrane ring with a bump in the same manner as in Example 1.
  The polyimide sheet with copper foil to be bonded to the silicon rubber sheet was prepared by the method described in the prior art. That is, after casting a polyimide precursor to a thickness of about 25 μm on a copper foil having a thickness of about 18 μm, a polyimide precursor was obtained. The body was heated and dried and cured to form a film having a structure in which a copper foil and a polyimide film were bonded together. Then, a film having a structure in which a copper foil and a polyimide film are bonded together is bonded to a silicon rubber sheet in the same manner as in Example 1 with the copper foil side up, and bumps are formed in the same manner as in the bump forming process described in Example 1. Fabricated membrane ring.
[0034]
(Examples 2-3, Reference Example 1)
Except that the temperature when forming the conductive metal film was 50 ° C. (Example 2), 160 ° C. (Example 3), and 200 ° C. (Reference Example 1), the same as in Example 1, A membrane ring with a bump was prepared.
[0035]
(Evaluation)
Hereinafter, the evaluation result of the membrane ring with a bump produced in Examples 1 to 3, Comparative Example 1, and Reference Example 1 is shown.
(Pad (bump) position accuracy evaluation)
(Position accuracy evaluation method)
Here, since the positional relationship between the isolated pattern and the bump is determined before the etching, it is only necessary to measure the position of the bump in order to measure the elongation. To do.
First, the bump as the measurement origin is recognized at the center of the image processing camera.
Next, using the bump position coordinate data with that position as the virtual origin, the workpiece is moved to a position where each bump falls within the field of view of the image processing camera, and the bump within the field of view is recognized by image processing. To obtain all bump position data.
Since the measurement is performed from the virtual origin for bump position measurement, after data acquisition, conversion to position data with the origin as (0, 0) is performed to obtain an error from the design value. By performing a process of subtracting the absolute coordinate value of the bump position as the virtual origin from the measured value, the position coordinate conversion between the bump position of the virtual origin and the origin (0, 0) is performed. In this position coordinate conversion, in order to make the total error as small as possible, eight points on the outer periphery of the measured bump are monitored, and the origin (0, 0) is set so that the error between the measurement data and the design value is minimized. ) Is set.
[0036]
(Evaluation results)
In the case of Examples 1 to 3, since the release of Cu tension in Cu etching for forming an isolated pattern does not occur, the membrane film does not extend in the outer peripheral direction, and the isolated pattern and bump generated by releasing the tension of Cu are not It was consistent with the design value, and the positional accuracy of the pads and bumps was good.
On the other hand, in Comparative Example 1, the Cu tension is released by Cu etching for forming the isolated pattern, the membrane film extends in the outer peripheral direction, and the design is performed at the distance between the center of the membrane film and the bump (pad) at the outermost peripheral portion. A maximum elongation of 175 ppm (± 17.5 μm) was generated compared to the value.
In Reference Example 1, the conductive metal film is formed at a temperature equal to or higher than the bonding temperature of the thermosetting adhesive. Therefore, the position accuracy of the formed isolated pattern deteriorates, which is not preferable.
[0037]
Next, a burn-in test was performed using the bumped membrane rings of Examples 1 to 3, Comparative Example 1, and Reference Example 1 obtained through the above steps. The glass multilayer wiring board used for the burn-in test was prepared as follows.
[0038]
(Production of glass multilayer wiring board)
The glass multilayer wiring board is formed by sputtering a Cr (about 200 mm) / Cu (about 2.5 μm) / Ni (about 0.2 μm) layer on a substrate such as low expansion alkali glass (for example, NA40: manufactured by HOYA). The first wiring layer is formed by patterning by a known lithography method, and a polyimide resin is coated on the first wiring layer. The first insulating layer is patterned by a known lithography method. Form. By repeating this, a wiring layer and an insulating layer were laminated to produce a multilayer wiring board having a four-layer structure. The uppermost Cu layer has a thickness of 10 μm or more in consideration of mechanical strength.
[0039]
(Burn-in test)
The burn-in test is performed in an atmosphere having a set temperature of 80 to 150 ° C. In this atmosphere, as shown in FIG. 3, a bumped membrane ring 10 produced by the manufacturing method of the present invention and an anisotropic conductive rubber on a 160 μm pitch Si wafer 30 placed on a vacuum chuck (not shown). The sheet 40 and the glass multilayer wiring board 20 produced by the above-described steps are placed in this order, and the whole is sucked and fixed, and evaluation is performed by a tester in which each device on the wafer 30 is connected to the glass multilayer wiring board 20 via a printed board. went. Note that the above-mentioned anisotropic electric rubber sheet 40 is formed by forming convex protrusions on the sheet so as to correspond to the pads of the above-described membrane ring with bumps.
[0040]
As a result, when the membrane ring with bumps produced by the manufacturing method of the example is used, the positions of the pads and bumps agree with the design values as shown in the position accuracy evaluation results of the pads (bumps) described above. In addition, since the positional accuracy could be suppressed to within ± 10 μm, no error due to a positional shift between the pad and the anisotropic conductive rubber and a short circuit due to a positional shift between the bump and the pattern on the wafer did not occur.
On the other hand, when the membrane ring with bumps produced by the manufacturing method of the comparative example is used, the maximum elongation amount is 17.5 μm at the outermost peripheral part as shown in the above-described pad position accuracy evaluation result, and the position accuracy is ± The thickness was 17.5 μm, and a short circuit occurred due to a positional deviation between the pad and the anisotropic conductive rubber and a positional deviation between the bump and the pattern on the wafer, resulting in an inspection failure (wafer damage occurred).
[0041]
The present invention is not limited to the above embodiments, and can be appropriately modified within the scope of the present invention.
[0042]
For example, bump hole formation, bump growth step and plating step thereof may be performed after the pad formation step or plating step.
[0043]
Instead of the SiC ring, a ring made of ceramic, low expansion glass, metal, or other material having a thermal expansion coefficient close to that of SiN or other Si and having high strength may be used. Furthermore, the shape of the ring is not limited to a circular shape, and any shape can be used as long as the ring can be supported in a state where the membrane is unfolded.
[0044]
Further, in the glass multilayer wiring board, a glass substrate having the same expansion coefficient as Si or close to Si may be used. These glass substrates are less expensive than ceramic substrates, have good flatness and the like by high-precision polishing, and are transparent so that alignment is easy. If non-alkali glass is used, there is no adverse effect due to elution of alkali surface.
[0045]
【The invention's effect】
As described above, according to the method for manufacturing a membrane ring with bumps of the present invention, the conductive thin film is formed after the insulating film is bonded to the ring to form the pad. Highly accurate and highly accurate membrane ring with bumps can be obtained.
Therefore, for example, no inspection failure occurs in the burn-in test.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view for explaining a membrane ring forming process according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view for explaining a process for forming a membrane ring with bumps according to an embodiment of the present invention.
FIG. 3 is a schematic diagram for explaining a burn-in test.
FIG. 4 is a cross-sectional view for explaining a conventional process for forming a membrane ring with bumps.
[Explanation of symbols]
1 Polyimide film
1a Bump hole
2 Copper foil
3 Bump
4 resist film
5 Pad
7 Polyimide film
11 rings
10 Membrane ring with bumps
12 Thermosetting adhesive
13 Aluminum plate
14 Silicone rubber sheet
15 Ni film
16 Cu plating layer
20 Multilayer wiring board
30 Silicon wafer
40 Anisotropic conductive rubber sheet

Claims (6)

A method of manufacturing a membrane ring with a bump that takes charge of a contact portion in a contact board,
Forming a conductive metal film on the surface of the insulating film pasted on the ring with a thermosetting adhesive at a predetermined temperature; and
Forming bump holes at predetermined positions of the insulating film, protecting the conductive metal film surface, connecting one of the electrodes for plating to the conductive metal film, and performing electroplating to form bumps; When,
Forming a resist film on the conductive metal film, and then exposing and developing the resist pattern; and
Selectively etching the conductive metal film using the resist pattern as a mask to form an isolated pad made of a conductive metal film material at a position corresponding to the bump on the insulating film;
And a step of removing the resist film. A method of manufacturing a bumped membrane ring. The method for producing a membrane ring with bumps according to claim 1, wherein the insulating film is stuck on the ring in a state of being expanded more than a state of being thermally expanded at the predetermined temperature. The method for manufacturing a membrane ring with bumps according to claim 1, wherein the conductive metal film is formed at a temperature equal to or lower than the predetermined temperature. The method of manufacturing a membrane ring with bumps according to claim 3, wherein the conductive metal film is formed at a temperature of an atmosphere in an environment where the membrane ring with bumps is used. 5. The bumped bump according to claim 1, wherein a conductive metal film is formed on the surface of the insulating film after the treatment for improving the adhesion of the surface of the insulating film is performed. Membrane ring manufacturing method. The method for producing a membrane ring with bumps according to any one of claims 1 to 5, wherein the bump hole is formed by irradiating the insulating film with a laser beam and removing it.

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