JP2006002246A - Method for forming microbump - Google Patents
Method for forming microbump Download PDFInfo
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- JP2006002246A JP2006002246A JP2004182937A JP2004182937A JP2006002246A JP 2006002246 A JP2006002246 A JP 2006002246A JP 2004182937 A JP2004182937 A JP 2004182937A JP 2004182937 A JP2004182937 A JP 2004182937A JP 2006002246 A JP2006002246 A JP 2006002246A
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- microbump
- plating
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- 238000000034 method Methods 0.000 title claims abstract description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 87
- 238000007747 plating Methods 0.000 claims abstract description 61
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 9
- 239000000654 additive Substances 0.000 claims abstract description 8
- XSUMSESCSPMNPN-UHFFFAOYSA-N propane-1-sulfonate;pyridin-1-ium Chemical compound C1=CC=NC=C1.CCCS(O)(=O)=O XSUMSESCSPMNPN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 3
- 230000000996 additive effect Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 229910001453 nickel ion Inorganic materials 0.000 claims description 4
- -1 sulfamate ions Chemical class 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical class C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 claims description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- PSZYNBSKGUBXEH-UHFFFAOYSA-M naphthalene-1-sulfonate Chemical compound C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-M 0.000 claims 1
- 239000000523 sample Substances 0.000 abstract description 18
- 239000011295 pitch Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 4
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- CJRQAPHWCGEATR-UHFFFAOYSA-N n-methyl-n-prop-2-ynylbutan-2-amine Chemical compound CCC(C)N(C)CC#C CJRQAPHWCGEATR-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000006259 organic additive Substances 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- RJPRZHQPROLZRW-UHFFFAOYSA-N 2-hydroxy-3-pyridin-1-ium-1-ylpropane-1-sulfonate Chemical compound [O-]S(=O)(=O)CC(O)C[N+]1=CC=CC=C1 RJPRZHQPROLZRW-UHFFFAOYSA-N 0.000 description 1
- REEBJQTUIJTGAL-UHFFFAOYSA-N 3-pyridin-1-ium-1-ylpropane-1-sulfonate Chemical compound [O-]S(=O)(=O)CCC[N+]1=CC=CC=C1 REEBJQTUIJTGAL-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- YGSZNSDQUQYJCY-UHFFFAOYSA-L disodium;naphthalene-1,5-disulfonate Chemical compound [Na+].[Na+].C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1S([O-])(=O)=O YGSZNSDQUQYJCY-UHFFFAOYSA-L 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical class C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- TVDSBUOJIPERQY-UHFFFAOYSA-N prop-2-yn-1-ol Chemical compound OCC#C TVDSBUOJIPERQY-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
本発明は、マイクロバンプの形成方法に関し、更に詳細には、高アスペクトのニッケルマイクロバンプを形成する方法に関する。 The present invention relates to a method for forming micro bumps, and more particularly to a method for forming high aspect nickel micro bumps.
従来、ＬＳＩの動作確認には、各電極パッドに一対のプローブを立てて検査する方法が採用されている。このＬＳＩ検査用プローブカードのコンタクトプローブの製造には従来ＣＶＤ法が用いられていた。しかし、微細なプローブを大量に製造する場合コスト面などに問題があるため、湿式めっきプロセスを用いたニッケルバンプによるコンタクトプローブ形成の検討が進んでいる。そして、ＬＳＩの小型高性能化に対応して、検査用プローブも微細化、狭ピッチ化が必要となっている。 Conventionally, in order to check the operation of an LSI, a method of inspecting a pair of probes on each electrode pad has been adopted. Conventionally, a CVD method has been used for manufacturing a contact probe of this LSI inspection probe card. However, when manufacturing a large number of fine probes, there are problems in terms of cost and the like, and therefore, studies are being made on forming contact probes using nickel bumps using a wet plating process. In response to the miniaturization and high performance of LSIs, inspection probes are also required to be finer and narrower in pitch.
プローブ用ニッケルバンプを形成するには、フォトリソグラフ法によりバンプ用の開口部のレジストパターンを形成するが、レジスト膜が厚いと高解像のパターンを形成できないという問題がある。そこで、薄膜レジストを使用してレジスト膜厚より厚くめっきを行い、高アスペクトニッケルバンプを形成する検討がなされている。 In order to form the probe nickel bump, a resist pattern of the bump opening is formed by photolithography, but there is a problem that a high-resolution pattern cannot be formed if the resist film is thick. Therefore, studies have been made to form a high aspect nickel bump by plating a film thicker than the resist film thickness using a thin film resist.
しかし、電気めっきは等方成長する傾向が一般的であり、レジストパターン上に電気ニッケルめっきを行うと電析膜は水平方向にも大きく広がるという性質があった。しかも、高アスペクト比のプローブを形成するためには、この性質に反して、ニッケル皮膜を垂直方向に高く堆積させる必要があった。 However, electroplating generally has a tendency to grow isotropically, and when electronickel plating is performed on a resist pattern, the electrodeposited film has a property of spreading widely in the horizontal direction. Moreover, in order to form a probe with a high aspect ratio, it was necessary to deposit a nickel film highly in the vertical direction against this property.
そこで、めっき浴に添加剤を加えて電析状態の制御をする試みがなされており、これまでもニッケルバンプの形状制御に関してはいくつか報告がある（非特許文献１および非特許文献２参照）。しかしこれらの技術でも、アスペクト比が十分に高いプローブが得られているとは言えなかった。 Therefore, attempts have been made to control the electrodeposition state by adding an additive to the plating bath, and there have been several reports regarding the shape control of nickel bumps (see Non-Patent Document 1 and Non-Patent Document 2). . However, even with these techniques, it cannot be said that a probe having a sufficiently high aspect ratio has been obtained.
従って本発明は、微細化、狭ピッチ化が進んでいるコンタクトプローブとして使用可能なニッケルバンプを、湿式めっきプロセスを用いて形成する方法の提供をその課題とするものである。 Accordingly, an object of the present invention is to provide a method of forming a nickel bump that can be used as a contact probe, which is becoming finer and narrower in pitch, by using a wet plating process.
本発明者は、上記課題を解決すべく、電気ニッケルめっき浴に着目し、当該浴に種々の添加剤を加えてその電析状態を調べた。そしてその結果、添加剤としてピリジニウムプロピルスルホネートやその誘導体を用いためっき浴を用いれば良好な形状のプローブ用ニッケルバンプが得られることを見出し、本発明を完成した。 In order to solve the above-mentioned problems, the present inventor paid attention to an electric nickel plating bath, added various additives to the bath, and investigated the electrodeposition state. As a result, it was found that if a plating bath using pyridinium propyl sulfonate or a derivative thereof as an additive is used, a nickel bump for a probe having a good shape can be obtained, thereby completing the present invention.
すなわち本発明は、微小開口部を有するフォトレジストで被めっき基板を被覆し、次いで当該被めっき基板を、添加剤として次の式（Ｉ）、
で表されるピリジニウムプロピルスルホネートまたはその誘導体を含有するニッケルめっき浴により電気めっきし、前記微小開口部部分にニッケルめっき皮膜を析出させることを特徴とするマイクロバンプの形成方法である。
That is, the present invention covers a substrate to be plated with a photoresist having a minute opening, and then uses the substrate to be plated as an additive in the following formula (I):
The microbump formation method is characterized in that electroplating is performed with a nickel plating bath containing pyridinium propyl sulfonate represented by the formula (1) or a derivative thereof, and a nickel plating film is deposited on the minute opening portion.
本発明方法によれば、皮膜応力が少なく、しかも高アスペクトのニッケルめっきによりバンプを形成することができる。そして、このニッケルバンプは、微細化、狭ピッチ化が進んでいるコンタクトプローブとして使用することができるものである。 According to the method of the present invention, bumps can be formed by nickel plating having a low film stress and a high aspect ratio. This nickel bump can be used as a contact probe that is becoming finer and narrower in pitch.
本発明を実施するには、まず、被めっき基板を微小開口部を有するフォトレジストで被覆し、バンプの平面形状をパターン化することが必要である。 In order to carry out the present invention, it is necessary to first coat the substrate to be plated with a photoresist having a minute opening and to pattern the planar shape of the bump.
この被めっき基板としては、電導性があってめっき可能なものであれば良く、具体的には、バンプを形成すべき部材が挙げられる。この被めっき基板の例としては、シリコンウエハ等の上にスパッタリング等でニッケル等の金属皮膜を蒸着したものや、樹脂基板上に金属皮膜を接着させたもの等が挙げられる。 The substrate to be plated may be any substrate that has electrical conductivity and can be plated, and specifically includes a member on which a bump is to be formed. Examples of the substrate to be plated include those obtained by depositing a metal film such as nickel on a silicon wafer or the like by sputtering, or those obtained by bonding a metal film on a resin substrate.
この被めっき基板はフォトレジストで被覆されるが、その厚みは、０.５から２０μｍ程度であればよい。また、このフォトレジスト上にパターン化される微小開口部の大きさは、バンプの平面形状によるが、四角形（正方形を含む）の場合は、１０から１００μｍ×１０から１００μｍ程度であれば良く、円形であれば、その直径が１０から１００μｍ程度であればよい。 The substrate to be plated is covered with a photoresist, and the thickness may be about 0.5 to 20 μm. Further, the size of the minute opening patterned on the photoresist depends on the planar shape of the bump, but in the case of a quadrangle (including a square), it may be about 10 to 100 μm × 10 to 100 μm. If so, the diameter may be about 10 to 100 μm.
上記フォトレジストとしては、光感光性樹脂や熱硬化樹脂等が使用され、例えば、ＰＭＥＲ Ｐ−ＬＡ９００ＰＭ（東京応化工業（株）製）等の市販品を使用することができる。また、パターン化は、露光、現像またはレーザー照射することにより実施される。 As the photoresist, a photosensitive resin, a thermosetting resin, or the like is used. For example, a commercially available product such as PMER P-LA900PM (manufactured by Tokyo Ohka Kogyo Co., Ltd.) can be used. The patterning is performed by exposure, development or laser irradiation.
次いで、上記のように微小開口部を有するフォトレジストで被覆された被めっき基板（以下、「バンプ用めっき基板」という）を、添加剤として次の式（Ｉ）、
で表されるピリジニウムプロピルスルホネートまたはその誘導体（以下、「ＰＰＳ誘導体」という）を含有するニッケルめっき浴で電気めっきする。
Next, a substrate to be plated (hereinafter referred to as a “bump plating substrate”) coated with a photoresist having a microscopic opening as described above is used as an additive in the following formula (I):
Electroplating in a nickel plating bath containing pyridinium propyl sulfonate represented by the following formula or a derivative thereof (hereinafter referred to as “PPS derivative”).
添加剤として使用される上記ＰＰＳ誘導体の具体例としては、式（Ｉ）中、Ｒ１およびＲ２が共に水素原子である３−ピリジニウムプロピルスルホネート（ピリジニウムプロピルスルホベタイン）、Ｒ１が水酸基でＲ２が水素原子である１−（２−ヒドロキシ−３−スルホプロピル）−ピリジニウムベタイン、Ｒ１が水素原子でＲ２が２−ビニル基である１−（３−プロピルスルホン酸−１）−２−ビニルピリジニウムベタイン等が挙げられる。これらは、例えば、ＰＰＳ、ＰＰＳＯＨ、ＰＰＶ等の商品名（ラッシング社製）で市販されているので、これを使用することができる。 Specific examples of the PPS derivative used as an additive include 3-pyridinium propyl sulfonate (pyridinium propyl sulfobetaine) in which R 1 and R 2 are both hydrogen atoms in formula (I), R 1 is a hydroxyl group and R 2 is a hydrogen atom 1- (2-hydroxy-3-sulfopropyl) - pyridinium betaine, R 1 is a hydrogen atom R 2 is a 2-vinyl 1- (3-propyl sulfonic acid -1) -2 -Vinyl pyridinium betaine etc. are mentioned. Since these are marketed under trade names (manufactured by Lushing) such as PPS, PPSOH, and PPV, these can be used.
上記ＰＰＳ誘導体が添加されるニッケル浴としては、例えば、スルファミン酸ニッケルめっき浴、ワット浴等が利用できる。本発明において使用されるこれらニッケルめっき液の基本組成は、従来より公知のもので良く、例えば、次の範囲の組成のものが使用される。 As the nickel bath to which the PPS derivative is added, for example, a nickel sulfamate plating bath, a Watt bath, or the like can be used. The basic composition of these nickel plating solutions used in the present invention may be a conventionally known one. For example, one having a composition in the following range is used.
〔 スルファミン酸ニッケルめっき浴 〕
一般的範囲 好ましい範囲
ニッケルイオン １０〜１２０ｇ／ｌ ５０〜１００ｇ／ｌ
スルファミン酸イオン ８０〜６００ｇ／ｌ ２００〜５００ｇ／ｌ
ホウ酸 ２０〜 ５０ｇ／ｌ ３０〜 ４０ｇ／ｌ
塩素イオン ０.５〜 ３ｇ／ｌ １〜 ２ｇ／ｌ
ｐＨ ３.５〜４.５ ４.０〜４.２
[Nickel sulfamate plating bath]
General range Preferred range Nickel ion 10-120 g / l 50-100 g / l
Sulfamic acid ion 80-600 g / l 200-500 g / l
Boric acid 20-50 g / l 30-40 g / l
Chlorine ion 0.5-3g / l 1-2g / l
pH 3.5-4.5 4.0-4.2
〔 ワット浴 〕
一般的範囲 好ましい範囲
ニッケルイオン １０〜１２０ｇ／ｌ ５０〜 ８０ｇ／ｌ
硫酸イオン ３０〜４００ｇ／ｌ ６０〜１２０ｇ／ｌ
ホウ酸 ２０〜 ５０ｇ／ｌ ３０〜 ４０ｇ／ｌ
塩素イオン ５〜 ３０ｇ／ｌ １０〜 ２０ｇ／ｌ
ｐＨ ３.５〜４.５ ４.０〜４.２
[Watt bath]
General range Preferred range Nickel ion 10-120 g / l 50-80 g / l
Sulfate ion 30-400 g / l 60-120 g / l
Boric acid 20-50 g / l 30-40 g / l
Chlorine ion 5-30 g / l 10-20 g / l
pH 3.5-4.5 4.0-4.2
上記ニッケルめっき浴へのＰＰＳ誘導体の添加量は、０.０２〜０.５ｇ／ｌ（１×１０−４〜３×１０−３ｍｏｌ／ｌ）程度、好ましくは、０.０６〜０.２ｇ／ｌ（３×１０−４〜１×１０−３ｍｏｌ／ｌ）である。 The amount of the PPS derivative added to the nickel plating bath is about 0.02 to 0.5 g / l (1 × 10 −4 to 3 × 10 −3 mol / l), preferably 0.06 to 0.2 g. / L (3 × 10 −4 to 1 × 10 −3 mol / l).
また、本発明で使用するニッケルめっき浴には、上記ＰＰＳ誘導体の他、いわゆる一次光沢剤として知られている化合物を添加することもできる。この一次光沢剤の例としては、１,５−ナフタレンジスルホン酸ナトリウム等のナフタレンスルホン酸塩やサッカリン塩を挙げることができる。 In addition to the PPS derivative, a compound known as a so-called primary brightener can be added to the nickel plating bath used in the present invention. Examples of the primary brightener include naphthalene sulfonates and saccharin salts such as sodium 1,5-naphthalenedisulfonate.
上記のニッケル浴を使用し、バンプ用めっき基板をめっきするに当たっては、特に制約はなく、通常のニッケルめっき方法により行うことができる。具体的には、例えば、常法に従ってバンプ用めっき基板を脱脂、酸洗浄を行った後、ニッケルめっきを行えばよい。このニッケルめっきの条件も、一般的なスルファミン酸ニッケルめっきないしはワット浴でのニッケルめっきの条件で良く、例えば、４０ないし６０℃のめっき浴中、１ないし２０Ａ／ｄｍ２の電流密度で、２分ないし６０分程度めっきすればよい。なお、このめっきにおいては、例えばポンプ循環等により撹拌を行うことが好ましい。 There is no restriction | limiting in particular when using the said nickel bath and plating the plating substrate for bumps, It can carry out by the normal nickel plating method. Specifically, for example, nickel plating may be performed after degreasing and acid cleaning the bump plating substrate according to a conventional method. The nickel plating conditions may be general nickel sulfamate plating or nickel plating in a watt bath, for example, at a current density of 1 to 20 A / dm 2 in a plating bath at 40 to 60 ° C. for 2 minutes. Or it may be plated for about 60 minutes. In this plating, for example, stirring is preferably performed by pump circulation or the like.
このようにして微小開口部に析出されたニッケルめっき皮膜（バンプ部分）は、そのアスペクト比（高さ／幅）が、０.２ないし１０であり、また、その析出範囲は、微小開口部より若干はみ出る程度である。 Thus, the nickel plating film (bump part) deposited on the minute opening has an aspect ratio (height / width) of 0.2 to 10, and the deposition range is smaller than that of the minute opening. It is just a little protruding.
従って、上記のようにめっきした後、レジストを除去すれば、微細化、狭ピッチ化が要求されるコンタクトプローブとして使用可能なニッケルバンプが得られる Therefore, if the resist is removed after plating as described above, a nickel bump that can be used as a contact probe requiring finer and narrower pitch can be obtained.
以下、実施例を挙げて本発明を更に詳しく説明するが、本発明はこれら実施例等に何ら制約されるものではない。 EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in more detail, this invention is not restrict | limited at all by these Examples.
実 施 例 １
プローブ用ニッケルバンプのめっきによる作成（１）：
バンプ用めっき基板として、ニッケルを蒸着したＳｉウェハ上に厚さ２０μｍのフォトレジスト（東京応化工業（株）製）でパターン形成したものを、表１に示す組成のスルファミン酸ニッケルめっき浴にピリジニウムプロピルスルホネート（ＰＰＳ）を０.１ｇ／ｌを加えためっき液（本発明浴）使用し、プローブ用ニッケルバンプを作成した。レジストパターンの開口部サイズは３０μｍ×３０μｍとした。
Example 1
Producing nickel bumps for probes by plating (1):
As a bump plating substrate, a pattern formed with a 20 μm thick photoresist (manufactured by Tokyo Ohka Kogyo Co., Ltd.) on a nickel-deposited Si wafer was applied to a nickel sulfamate plating bath having the composition shown in Table 1 and pyridinium propyl. Nickel bumps for probes were prepared using a plating solution (invention bath) to which 0.1 g / l of sulfonate (PPS) was added. The opening size of the resist pattern was 30 μm × 30 μm.
なお、対照としては、表１の基本浴を、また比較としては、本発明浴において、ＰＰＳに代え、クマリンを０.１ｇ／ｌ使用した浴（比較浴１）およびプロパルギルアルコールを０.０１ｇ／ｌ使用した浴（比較浴２）を用いた。 As a control, the basic bath of Table 1 was used, and as a comparison, in the bath of the present invention, instead of PPS, a bath using 0.1 g / l of coumarin (Comparative bath 1) and propargyl alcohol of 0.01 g / l. l The bath used (Comparative bath 2) was used.
まためっきは、バンプ用めっき基板を、１０％リン酸と界面活性剤の混合溶液で１分間脱脂を行い、次いで１０％硫酸溶液で１分間酸活性を行なった後、浴温４０℃、ポンプ撹拌、電流密度５Ａ／ｄｍ２、めっき時間４０分間の条件下で実施し、本発明浴による本発明バンプ、基本浴による対照バンプ、比較浴１による比較１バンプおよび比較浴２による比較２バンプを得た。なお、ポンプ撹拌は、めっきセル内に設置した撹拌パイプからの液流が、被めっき物表面を循環するようにセットした。 For plating, the bump plating substrate is degreased with a mixed solution of 10% phosphoric acid and a surfactant for 1 minute, then acid activated with a 10% sulfuric acid solution for 1 minute, and then the bath temperature is 40 ° C. and the pump is stirred. , Current density 5A / dm 2 , plating time 40 minutes, was carried out to obtain the present invention bump by the present invention bath, the control bump by the basic bath, the comparison 1 bump by the comparison bath 1 and the comparison 2 bump by the comparison bath 2 It was. The pump agitation was set so that the liquid flow from the agitation pipe installed in the plating cell circulated on the surface of the object to be plated.
実 施 例 ２
バンプめっき皮膜の形状および表面観察：
実施例１で得た各バンプについて、そのめっき皮膜の形状測定および表面観察を行った。この測定ないし観察には、超深度形状測定顕微鏡（ＶＫ８５５０キーエンス社製）および走査型電子顕微鏡（ＪＳＭ−５２００ ＪＥＯＬ製）を用いた。
Example 2
Bump plating film shape and surface observation:
About each bump obtained in Example 1, the shape measurement and surface observation of the plating film were performed. For this measurement or observation, an ultra-deep shape measurement microscope (VK85550 Keyence) and a scanning electron microscope (JSM-5200 JEOL) were used.
本発明バンプの外観を図１に、対照バンプの外観を図２に、比較１バンプおよび比較２バンプの外観をそれぞれ図３および４に示した。この結果から明らかなように、本発明バンプでは、めっき部分がレジスト開口部よりあまりはみ出していないのに対し、対照バンプおよび比較バンプでは、めっき部分がレジスト開口部から大きくはみ出していた。 FIG. 1 shows the appearance of the bump of the present invention, FIG. 2 shows the appearance of the control bump, and FIGS. 3 and 4 show the appearance of the comparison 1 bump and the comparison 2 bump, respectively. As is clear from this result, in the bump of the present invention, the plated portion did not protrude much from the resist opening, whereas in the control bump and the comparative bump, the plated portion protruded greatly from the resist opening.
実 施 例 ３
ニッケルめっき皮膜応力の測定：
本発明浴、比較浴１および２と、表１の組成から有機添加剤を全く取り去った浴（無添加浴）について、それらのめっき後の皮膜応力を測定した。
Example 3
Measurement of nickel plating film stress:
With respect to the inventive bath, comparative baths 1 and 2, and a bath from which the organic additive was completely removed from the composition shown in Table 1 (additive-free bath), the film stress after plating was measured.
応力測定は、応力測定用の試験片（Ｂｅ−Ｃｕ製のテストストリップ）にめっきを行い、その皮膜応力をストリップ電着応力測定器（藤化成株式会社）を用いて測定することにより行った。試験片のめっき操作条件はバンプめっき時とほぼ同様にして行い、めっき膜厚が約３.５μｍになるように、めっき時間を調整した。この結果を図５に示す。 Stress measurement was performed by plating a test piece for stress measurement (a test strip made of Be-Cu) and measuring the film stress using a strip electrodeposition stress measuring instrument (Fuji Kasei Co., Ltd.). The plating operation conditions of the test piece were performed in substantially the same manner as in the bump plating, and the plating time was adjusted so that the plating film thickness was about 3.5 μm. The result is shown in FIG.
この結果から明らかなように、本発明浴の応力は、比較浴１および２の応力に比べ半分以下であり、有機添加剤を加えない無添加浴よりも低かった。 As is apparent from this result, the stress of the bath of the present invention was less than half that of the comparative baths 1 and 2, and was lower than that of the non-added bath to which no organic additive was added.
実 施 例 ４
プローブ用ニッケルバンプのめっきによる作成（２）：
下記表２のワット浴をベースとする浴を基本液とし、これにピリジニウムプロピルスルホネート（ＰＰＳ）を０.１ｇ／ｌを加えたニッケルめっきを使用し、めっき浴温５０℃とする以外は実施例１と同様にしてバンプを作成した。このバンプの析出外観は、図１とほぼ同様であった。
Example 4
Producing nickel bumps for probes by plating (2):
Examples except that baths based on watt baths shown in Table 2 below are used as the base solution, and nickel plating with 0.1 g / l of pyridinium propyl sulfonate (PPS) added thereto is used, and the plating bath temperature is set to 50 ° C. Bumps were created in the same manner as in 1. The appearance of the bump deposition was almost the same as in FIG.
本発明方法によれば、めっきの析出状態を制御した形でバンプを形成することができる。そして析出したバンプのニッケル皮膜は、皮膜応力が少ないものである。 According to the method of the present invention, bumps can be formed in a manner in which the deposition state of plating is controlled. And the nickel film of the deposited bump has a small film stress.
従って、本発明方法により、微細化、狭ピッチ化が求められるコンタクトプローブとして使用可能なニッケルバンプを有利に形成することができる。 Therefore, the method of the present invention can advantageously form nickel bumps that can be used as contact probes that require finer and narrower pitches.
Claims (7)
で表されるピリジニウムプロピルスルホネートまたはその誘導体を含有するニッケルめっき浴により電気めっきし、前記微小開口部部分にニッケルめっき皮膜を析出させることを特徴とするマイクロバンプの形成方法。 The substrate to be plated is coated with a photoresist having a minute opening, and then the substrate to be plated is used as an additive in the following formula (I),
A method for forming a microbump, which comprises electroplating with a nickel plating bath containing a pyridinium propyl sulfonate represented by the formula (1) or a derivative thereof, and depositing a nickel plating film on the minute opening portion.
The nickel plating solution is a watt bath containing 10 to 120 g / l as nickel ions, 30 to 400 g / l as sulfate ions, 5 to 30 g / l as chlorine ions, and 20 to 50 g / l as boric acid. The method for forming a microbump according to any one of Items 5 to 5.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015525294A (en) * | 2013-05-08 | 2015-09-03 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ | Nickel or nickel alloy direct current electroplating bath for depositing semi-bright nickel or nickel alloy, method for electroplating, and use of the bath and compound therefor |
| JP2016121377A (en) * | 2014-12-24 | 2016-07-07 | ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド | Nickel plating solution |
| JP2020533486A (en) * | 2017-09-13 | 2020-11-19 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ | Baths and methods for filling vertical interconnect access or grooves in workpieces with nickel or nickel alloys |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6391358A (en) * | 1986-09-22 | 1988-04-22 | アトテク ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング | Alpha hydroxypropinesulfonic acid and salt, manufacture and acidic nickel bath containing same |
| JPH09157884A (en) * | 1995-12-12 | 1997-06-17 | Dipsol Chem Co Ltd | Nonacidic nickel plating bath and plating method using the bath |
| JPH10223689A (en) * | 1997-02-06 | 1998-08-21 | Dipsol Chem Co Ltd | Method of forming columnar electroplates in fine holes |
| JPH11100690A (en) * | 1997-09-25 | 1999-04-13 | Tdk Corp | Fine structure and its production |
| JP2000204495A (en) * | 1999-01-08 | 2000-07-25 | Okuno Chem Ind Co Ltd | Nickel electroplating solution |
| JP2002148281A (en) * | 2000-08-28 | 2002-05-22 | Hoya Corp | Contact part and its manufacturing method |
-
2004
- 2004-06-21 JP JP2004182937A patent/JP4510533B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6391358A (en) * | 1986-09-22 | 1988-04-22 | アトテク ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング | Alpha hydroxypropinesulfonic acid and salt, manufacture and acidic nickel bath containing same |
| JPH09157884A (en) * | 1995-12-12 | 1997-06-17 | Dipsol Chem Co Ltd | Nonacidic nickel plating bath and plating method using the bath |
| JPH10223689A (en) * | 1997-02-06 | 1998-08-21 | Dipsol Chem Co Ltd | Method of forming columnar electroplates in fine holes |
| JPH11100690A (en) * | 1997-09-25 | 1999-04-13 | Tdk Corp | Fine structure and its production |
| JP2000204495A (en) * | 1999-01-08 | 2000-07-25 | Okuno Chem Ind Co Ltd | Nickel electroplating solution |
| JP2002148281A (en) * | 2000-08-28 | 2002-05-22 | Hoya Corp | Contact part and its manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015525294A (en) * | 2013-05-08 | 2015-09-03 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ | Nickel or nickel alloy direct current electroplating bath for depositing semi-bright nickel or nickel alloy, method for electroplating, and use of the bath and compound therefor |
| JP2016121377A (en) * | 2014-12-24 | 2016-07-07 | ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド | Nickel plating solution |
| JP2020533486A (en) * | 2017-09-13 | 2020-11-19 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ | Baths and methods for filling vertical interconnect access or grooves in workpieces with nickel or nickel alloys |
| JP7203832B2 (en) | 2017-09-13 | 2023-01-13 | アトテック ドイチュラント ゲー・エム・ベー・ハー ウント コー． カー・ゲー | Bath and method for filling vertical interconnect accesses or grooves of workpieces with nickel or nickel alloys |
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