JP2002141494A5 - - Google Patents
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- Publication number
- JP2002141494A5 JP2002141494A5 JP2000334686A JP2000334686A JP2002141494A5 JP 2002141494 A5 JP2002141494 A5 JP 2002141494A5 JP 2000334686 A JP2000334686 A JP 2000334686A JP 2000334686 A JP2000334686 A JP 2000334686A JP 2002141494 A5 JP2002141494 A5 JP 2002141494A5
- Authority
- JP
- Japan
- Prior art keywords
- ion
- metal atom
- point contact
- contact array
- mobile ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000334686A JP4118500B2 (ja) | 2000-11-01 | 2000-11-01 | ポイントコンタクト・アレー |
| EP06001940A EP1662575B1 (en) | 2000-11-01 | 2001-10-29 | A NOT circuit |
| DE60126310T DE60126310T2 (de) | 2000-11-01 | 2001-10-29 | Punktkontaktarray, Not-Schaltung und elektronische Schaltung damit |
| US10/363,259 US7026911B2 (en) | 2000-11-01 | 2001-10-29 | Point contact array, not circuit, and electronic circuit comprising the same |
| DE60131036T DE60131036T2 (de) | 2000-11-01 | 2001-10-29 | Ein NOT-Schaltkreis |
| PCT/JP2001/009464 WO2002037572A1 (en) | 2000-11-01 | 2001-10-29 | Point contact array, not circuit, and electronic circuit comprising the same |
| EP01980925A EP1331671B1 (en) | 2000-11-01 | 2001-10-29 | Point contact array and electronic circuit comprising the same |
| TW090126677A TW523983B (en) | 2000-11-01 | 2001-10-29 | Point contact array, NOT circuit and electronic circuit using the same |
| KR1020037004682A KR100751736B1 (ko) | 2000-11-01 | 2001-10-29 | 포인트 컨택트 어레이, not 회로, 및 이를 이용한 전자회로 |
| US10/918,360 US7473982B2 (en) | 2000-11-01 | 2004-08-16 | Point contact array, not circuit, and electronic circuit comprising the same |
| US11/165,037 US7525410B2 (en) | 2000-11-01 | 2005-06-24 | Point contact array, not circuit, and electronic circuit using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000334686A JP4118500B2 (ja) | 2000-11-01 | 2000-11-01 | ポイントコンタクト・アレー |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002141494A JP2002141494A (ja) | 2002-05-17 |
| JP2002141494A5 true JP2002141494A5 (https=) | 2005-04-07 |
| JP4118500B2 JP4118500B2 (ja) | 2008-07-16 |
Family
ID=18810557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000334686A Expired - Fee Related JP4118500B2 (ja) | 2000-11-01 | 2000-11-01 | ポイントコンタクト・アレー |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4118500B2 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100448049C (zh) | 2001-09-25 | 2008-12-31 | 独立行政法人科学技术振兴机构 | 使用固体电解质的电气元件和存储装置及其制造方法 |
| US6849868B2 (en) * | 2002-03-14 | 2005-02-01 | Micron Technology, Inc. | Methods and apparatus for resistance variable material cells |
| US6798068B2 (en) * | 2002-11-26 | 2004-09-28 | Advanced Micro Devices, Inc. | MOCVD formation of Cu2S |
| US7116573B2 (en) * | 2003-07-18 | 2006-10-03 | Nec Corporation | Switching element method of driving switching element rewritable logic integrated circuit and memory |
| JP4356542B2 (ja) | 2003-08-27 | 2009-11-04 | 日本電気株式会社 | 半導体装置 |
| JP4992859B2 (ja) * | 2003-08-27 | 2012-08-08 | 日本電気株式会社 | 半導体装置 |
| JP5434967B2 (ja) * | 2003-11-28 | 2014-03-05 | ソニー株式会社 | 記憶素子及び記憶装置 |
| JP4792714B2 (ja) * | 2003-11-28 | 2011-10-12 | ソニー株式会社 | 記憶素子及び記憶装置 |
| JP2005286084A (ja) * | 2004-03-30 | 2005-10-13 | Univ Waseda | 量子化コンダクタンス素子、これを用いた磁場変化検出方法及び磁気検出方法、並びに量子化コンダクタンス素子の製造方法 |
| WO2009020210A1 (ja) | 2007-08-08 | 2009-02-12 | National Institute For Materials Science | スイッチング素子とその用途 |
| KR101418434B1 (ko) * | 2008-03-13 | 2014-08-14 | 삼성전자주식회사 | 비휘발성 메모리 장치, 이의 제조 방법, 및 이를 포함하는프로세싱 시스템 |
| JP5699666B2 (ja) * | 2011-02-16 | 2015-04-15 | 日本電気株式会社 | 半導体装置 |
| JP5696988B2 (ja) * | 2011-06-08 | 2015-04-08 | 独立行政法人物質・材料研究機構 | シナプス動作素子 |
| JP2014075424A (ja) * | 2012-10-03 | 2014-04-24 | Toshiba Corp | 不揮発性可変抵抗素子、制御装置および記憶装置 |
-
2000
- 2000-11-01 JP JP2000334686A patent/JP4118500B2/ja not_active Expired - Fee Related
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