JP2002141404A - Material having built-in electrode and wafer supporting member using the same - Google Patents
Material having built-in electrode and wafer supporting member using the sameInfo
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- JP2002141404A JP2002141404A JP2000333837A JP2000333837A JP2002141404A JP 2002141404 A JP2002141404 A JP 2002141404A JP 2000333837 A JP2000333837 A JP 2000333837A JP 2000333837 A JP2000333837 A JP 2000333837A JP 2002141404 A JP2002141404 A JP 2002141404A
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- electrode
- power supply
- supply terminal
- resin
- ceramic body
- Prior art date
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- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電極を内蔵したセ
ラミック体や電極を内蔵した樹脂層を接合したセラミッ
ク体に、上記電極と電気的に接続される給電端子を備え
た電極内蔵体とこれを用いたウエハ支持部材に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a built-in electrode body having a power supply terminal electrically connected to the above-mentioned electrode, and a ceramic body having a built-in electrode or a resin body having a built-in electrode. The present invention relates to a wafer support member using the same.
【０００２】[0002]
【従来の技術】従来、オゾン発生器、静電吸着部材、酸
素センサー、気化装置、ダイボンディング装置等には、
セラミック体や樹脂層中に電極を内蔵した電極内蔵体が
使用されている。2. Description of the Related Art Conventionally, an ozone generator, an electrostatic attraction member, an oxygen sensor, a vaporizer, a die bonding apparatus, etc.
An electrode built-in body in which an electrode is built in a ceramic body or a resin layer is used.
【０００３】例えば、半導体製造プロセスでは、ドライ
化が急速に進み、エッチング装置、プラズマＣＶＤ装
置、プラズマＰＶＤ装置、イオン注入装置、電子ビーム
描画装置、イオンビーム描画装置、Ｘ線描画装置等の半
導体製造装置では、半導体ウエハ(以下、ウエハという)
を真空雰囲気中で処理するため、静電チャックやサセプ
タなどのウエハ支持部材が使用されている。For example, in a semiconductor manufacturing process, dryness is rapidly progressing, and semiconductor manufacturing such as an etching apparatus, a plasma CVD apparatus, a plasma PVD apparatus, an ion implantation apparatus, an electron beam lithography apparatus, an ion beam lithography apparatus, and an X-ray lithography apparatus is performed. In the equipment, semiconductor wafer (hereinafter referred to as wafer)
Is processed in a vacuum atmosphere, a wafer support member such as an electrostatic chuck or a susceptor is used.
【０００４】図５に従来のウエハ支持部材の一例を示す
ように、このウエハ支持部材２１は、円盤状をしたセラ
ミック体２２の上面をウエハＷの設置面２３とするとと
もに、上記セラミック体２２中に電極２４を埋設したも
ので、上記セラミック体２２の下面には、上記電極２４
と電気的に接続される金属製の給電端子２５を接合して
ある。As shown in FIG. 5, an example of a conventional wafer support member is a wafer support member 21 in which the upper surface of a disk-shaped ceramic body 22 is used as a mounting surface 23 for a wafer W, An electrode 24 is embedded in the ceramic body 22.
And a metal power supply terminal 25 electrically connected to the power supply terminal 25.
【０００５】また、上記ウエハ支持部材２１を形成する
板状セラミック体２２と給電端子２５とを接合する手段
として、特開平５−１０１８７１号公報には、図６に示
すように、電極２４と給電ブロック体２６をワイヤ２７
を介して電気的に接続したものを金型内に設置し、この
金型内にセラミック原料を充填してホットプレスによっ
て焼結させることにより、ワイヤ２７によって電気的に
接続された電極２４と給電ブロック体２６を一体的に埋
設してなるセラミック体２２を製作し、該セラミック体
２２の表面に露出する給電ブロック体２６の雌ねじ部２
６ａに給電端子２５の雄ねじ部２５ａを螺合させること
により、給電端子２５を電極２４と電気的に接続するよ
うにしたものが提案されている。As means for joining the plate-shaped ceramic body 22 forming the wafer support member 21 and the power supply terminal 25, Japanese Patent Application Laid-Open No. Hei 5-101873 discloses an electrode 24 and a power supply terminal as shown in FIG. Block 26 is connected to wire 27
Is electrically connected via a wire 27, and is placed in a mold, and the mold is filled with a ceramic material and sintered by hot pressing to supply power to the electrode 24 electrically connected by the wire 27. The ceramic body 22 having the block body 26 integrally embedded therein is manufactured, and the female screw portion 2 of the power supply block body 26 exposed on the surface of the ceramic body 22 is manufactured.
An arrangement has been proposed in which the male screw portion 25a of the power supply terminal 25 is screwed into the power supply terminal 6 to electrically connect the power supply terminal 25 to the electrode 24.
【０００６】また、特開平１０―１８９６９６号公報に
は、図７に示すように、セラミック体２２の下面に電極
２４と連通する穴２２ａを穿孔し、該穴２２ａの内壁面
にメタライズ層２８を形成した後、給電端子２５を挿入
し、ロウ材層２９を介してロウ付けすることにより、給
電端子２５を電極２４と電気的に接続するようにしたも
のが提案されている。In Japanese Patent Application Laid-Open No. Hei 10-189696, as shown in FIG. 7, a hole 22a communicating with the electrode 24 is formed in the lower surface of the ceramic body 22, and a metallized layer 28 is formed on the inner wall surface of the hole 22a. After the formation, a power supply terminal 25 is inserted and brazed via a brazing material layer 29 to electrically connect the power supply terminal 25 to the electrode 24.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、図６に
示す給電構造を有するウエハ支持部材２１では、ホット
プレスによりセラミック体２２を焼結させる際に異材質
の給電ブロック体２６が埋設されていることから、その
周囲のセラミック部に発生した応力が残留応力として残
り、セラミック部にクラックが発生し易く製造歩留りが
悪いといった課題があった。しかも、この給電構造の場
合、ホットプレスのように大がかりな焼成装置を用いな
ければならないといった課題もあった。However, in the wafer supporting member 21 having the power supply structure shown in FIG. 6, a power supply block 26 made of a different material is embedded when the ceramic body 22 is sintered by hot pressing. Therefore, there is a problem that the stress generated in the surrounding ceramic part remains as residual stress, cracks are easily generated in the ceramic part, and the production yield is poor. In addition, in the case of this power supply structure, there is a problem that a large-scale baking apparatus such as a hot press must be used.
【０００８】また、図７に示す接合構造を有するウエハ
支持部材２１では、ロウ付け後、セラミック体２２、給
電端子２５、及びロウ材層２９間における熱膨張差によ
って室温まで冷却する際に発生する残留応力によって、
セラミックス体２２に形成した穴２２ａのコーナー部を
起点とするクラックが発生し易く製造歩留りが悪いとい
った課題があった。Further, in the wafer support member 21 having the bonding structure shown in FIG. 7, it occurs when the temperature is reduced to room temperature due to a difference in thermal expansion between the ceramic body 22, the power supply terminal 25, and the brazing material layer 29 after brazing. Depending on the residual stress,
There has been a problem that cracks starting from the corners of the holes 22a formed in the ceramic body 22 tend to occur and the production yield is poor.
【０００９】このように、いずれの給電構造においても
製造歩留りが悪く、容易にかつ確実に内部電極との接続
が可能な給電構造を有するウエハ支持部材は未だ得られ
ていなかった。As described above, in any of the power supply structures, the production yield is poor, and a wafer supporting member having a power supply structure capable of easily and reliably connecting to the internal electrodes has not been obtained yet.
【００１０】[0010]
【課題を解決するための手段】そこで、上記課題に鑑
み、請求項１に係る発明は、電極を内蔵したセラミック
体の表面又は電極を内蔵した樹脂層を接合したセラミッ
ク体の表面に、上記電極の一部が露出する凹部を設け、
該凹部に給電端子を挿入するとともに、該給電端子と上
記凹部とを、導電性粒子を１０〜９０容量％の範囲で含
有する樹脂系接着剤からなる接着層にて接着固定して電
極内蔵体を構成したものである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, the invention according to claim 1 is directed to a method of forming the electrode on a surface of a ceramic body having a built-in electrode or a surface of a ceramic body joined with a resin layer having a built-in electrode. A concave portion where a part of is exposed,
A power supply terminal is inserted into the concave portion, and the power supply terminal and the concave portion are bonded and fixed with an adhesive layer made of a resin-based adhesive containing conductive particles in a range of 10 to 90% by volume. It is what constituted.
【００１１】請求項２に係る発明は、上記導電性粒子と
して、金、銀、銅、錫、アルミニウムのうちの少なくと
も１種以上を用いたことを特徴とする。According to a second aspect of the present invention, at least one of gold, silver, copper, tin, and aluminum is used as the conductive particles.
【００１２】請求項３に係る発明は、上記樹脂系接着剤
を形成する樹脂として、エポキシ樹脂、シリコン樹脂、
フッ素樹脂のいずれか１種を用いたことを特徴とする。According to a third aspect of the present invention, as the resin forming the resin-based adhesive, an epoxy resin, a silicon resin,
It is characterized by using any one of fluororesins.
【００１３】請求項４に係る発明は、上記電極内蔵体を
形成する、電極を内蔵したセラミック体の表面又は電極
を内蔵した樹脂層の表面をウエハの設置面としてウエハ
支持部材を形成したことを特徴とする。According to a fourth aspect of the present invention, the wafer supporting member is formed by setting the surface of the ceramic body having the built-in electrodes or the surface of the resin layer having the built-in electrodes as the mounting surface of the wafer. Features.
【００１４】請求項５に係る発明は、請求項４に係るウ
エハ支持部材において、電極が、静電吸着用電極又はプ
ラズマ電極のいずれかであることを特徴とする。According to a fifth aspect of the present invention, in the wafer supporting member according to the fourth aspect, the electrode is any one of an electrostatic attraction electrode and a plasma electrode.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施形態について
説明する。Embodiments of the present invention will be described below.
【００１６】図１は本発明に係る電極内蔵体の一例であ
るウエハ支持部材を示す断面図である。FIG. 1 is a sectional view showing a wafer supporting member which is an example of the electrode built-in body according to the present invention.
【００１７】このウエハ支持部材１は、円盤状をしたセ
ラミック体２の上面をウエハの設置面３とするととも
に、上記セラミック体２中に電極４を埋設したもので、
上記セラミック体２の下面には、上記電極４と電気的に
接続される金属製の給電端子５を接合してある。The wafer support member 1 has a disk-shaped ceramic body 2 as an upper surface serving as a wafer mounting surface 3 and an electrode 4 embedded in the ceramic body 2.
A metal power supply terminal 5 electrically connected to the electrode 4 is joined to the lower surface of the ceramic body 2.
【００１８】また、図２に図１のウエハ支持部材におけ
る給電構造を拡大した断面図を示すように、セラミック
体２の下面には、電極４の一部が露出する凹部２ａを形
成してあり、該凹部２ａには給電端子５を挿入し、導電
性粒子を１０〜９０容量％の範囲で含有する樹脂系接着
剤からなる接着層６にて接着固定することにより、給電
端子５を電極４と電気的に接続してある。FIG. 2 is an enlarged cross-sectional view of the power supply structure of the wafer support member shown in FIG. 1, and a concave portion 2a is formed on the lower surface of the ceramic body 2 so that a part of the electrode 4 is exposed. The power supply terminal 5 is inserted into the recess 2a, and is fixed by an adhesive layer 6 made of a resin-based adhesive containing conductive particles in a range of 10 to 90% by volume. It is electrically connected to
【００１９】そして、このウエハ支持部材１に内蔵する
電極４を静電吸着用電極として用いる場合、設置面３に
半導体ウエハ等のウエハＷを載せ、このウエハＷと電極
４との間に電圧を引加することで、ウエハＷと電極４と
の間に誘電分極によるクーロン力や微少な漏れ電流によ
るジョンソン・ラーベック力等の静電吸着力を発現さ
せ、ウエハＷを設置面３に吸着固定させることができ、
また、電極４をプラズマ発生用電極として用いる場合、
設置面３の上方に設けた別のプラズマ発生用電極と電極
４との間に高周波電力を引加することで、両電極間にプ
ラズマを発生させることができる。When the electrode 4 built in the wafer support member 1 is used as an electrode for electrostatic attraction, a wafer W such as a semiconductor wafer is placed on the installation surface 3 and a voltage is applied between the wafer W and the electrode 4. By applying the force, an electrostatic attraction force such as Coulomb force due to dielectric polarization or Johnson-Rahbek force due to a small leakage current is developed between the wafer W and the electrode 4 to attract and fix the wafer W to the installation surface 3. It is possible,
When the electrode 4 is used as a plasma generating electrode,
By applying high-frequency power between another electrode for plasma generation provided above the installation surface 3 and the electrode 4, plasma can be generated between the two electrodes.
【００２０】また、本発明によれば、セラミック体２の
下面に穿孔した凹部２ａに給電端子５を挿入し、樹脂系
接着剤からなる接着層６にて接着固定してあることか
ら、給電端子５の接合時にセラミック体２を破損させる
ようなことはなく、また、ウエハ支持部材１に使用中に
おいて、給電端子５とセラミック体２との接合部が別の
熱源によって加熱されたり、給電端子５に引加する電流
や高周波電力によって発熱したとしても、セラミック体
２を破損させることがない。Further, according to the present invention, the power supply terminal 5 is inserted into the concave portion 2a formed in the lower surface of the ceramic body 2 and is adhered and fixed by the adhesive layer 6 made of a resin-based adhesive. 5 does not damage the ceramic body 2 at the time of bonding, and the joint between the power supply terminal 5 and the ceramic body 2 is heated by another heat source during use of the wafer support member 1 or the power supply terminal 5 is not heated. The ceramic body 2 is not damaged even if heat is generated by a current or high-frequency power applied to the ceramic body 2.
【００２１】即ち、本発明によれば、セラミック体２と
金属からなる給電端子５との間の熱膨張差による応力が
発生したとしても、この応力を接着層６で吸収すること
ができるため、セラミック体２の破損を防止することが
できる。That is, according to the present invention, even if a stress due to a difference in thermal expansion between the ceramic body 2 and the power supply terminal 5 made of metal is generated, the stress can be absorbed by the adhesive layer 6. Damage to the ceramic body 2 can be prevented.
【００２２】また、接着層６を形成する樹脂系接着剤に
は導電性粒子を含有させて導電性を持たせてあることか
ら、長期間にわたり安定した通電を行うことができる。Further, since the resin-based adhesive forming the adhesive layer 6 is made conductive by containing conductive particles, it is possible to stably supply electricity for a long period of time.
【００２３】しかも、従来のようにホットプレス装置を
用いたり、ロウ付け等の高温に加熱する必要がないた
め、容易に製造することができる。Further, since it is not necessary to use a hot press apparatus or heat to a high temperature such as brazing as in the conventional case, it is possible to manufacture easily.
【００２４】ところで、給電端子５に引加された電力を
ロスなく電極４へ通電するためには、接着層６に十分な
導電性を持たせる必要があるが、導電性粒子の含有量が
１０容量％を下回ると、給電端子５と電極４との間の抵
抗が大きくなって電力ロスを生じ易くなるとともに、接
合部が異常発熱し、接着層６を劣化させてしまうことに
なる。ただし、導電性粒子の含有量が９０容量％を越え
ると、接着強度が低下し、給電端子５がセラミック体２
の凹部２ａから落下する恐れがある。In order to supply the electric power applied to the power supply terminal 5 to the electrode 4 without loss, the adhesive layer 6 must have sufficient conductivity. If the capacity is less than%, the resistance between the power supply terminal 5 and the electrode 4 becomes large and power loss is likely to occur. At the same time, the bonding portion generates abnormal heat and the adhesive layer 6 is deteriorated. However, if the content of the conductive particles exceeds 90% by volume, the adhesive strength decreases, and the power supply terminal 5 is connected to the ceramic body 2.
May fall from the concave portion 2a.
【００２５】その為、十分な接着強度を維持しつつ、十
分な導電性を得るためには、接着層６を形成する樹脂系
接着剤に含有させる導電性粒子は、１０〜９０容量％の
範囲で含有することが良く、好ましくは２０〜９０容量
％の範囲で含有することが良い。Therefore, in order to obtain a sufficient conductivity while maintaining a sufficient adhesive strength, the conductive particles contained in the resin-based adhesive forming the adhesive layer 6 must be in the range of 10 to 90% by volume. , And preferably in the range of 20 to 90% by volume.
【００２６】また、導電性粒子の材質としては、導電率
が大きく、樹脂系接着剤との反応が小さく、しかも耐熱
性に優れたものが良く、例えば、金、銀、銅、錫、アル
ミニウムを用いることができる。特に、金、銀、銅は導
電率の点で好ましく、さらに樹脂系接着剤との反応が小
さい点で金と銀が望ましい。なお、導電性粒子の最大粒
子経は２〜５０μｍの範囲にあるものを用いることが好
ましい。As the material of the conductive particles, those having a high conductivity, a small reaction with the resin-based adhesive, and an excellent heat resistance are preferable. For example, gold, silver, copper, tin, and aluminum may be used. Can be used. In particular, gold, silver, and copper are preferable in terms of electrical conductivity, and gold and silver are more preferable in that reaction with a resin-based adhesive is small. The conductive particles preferably have a maximum particle diameter in the range of 2 to 50 μm.
【００２７】一方、接着層６を形成する樹脂系接着剤の
樹脂材としては、エポキシ樹脂、シリコン樹脂、フッ素
系樹脂及びこれらを混合した樹脂が、上述した導電性粒
子との反応が小さく、さらに耐熱性に優れるとともに、
経時変化が少ない点で好適である。On the other hand, as the resin material of the resin-based adhesive forming the adhesive layer 6, epoxy resin, silicon resin, fluorine-based resin and a resin obtained by mixing these resins have a small reaction with the above-mentioned conductive particles, and Excellent heat resistance,
It is suitable in that there is little change with time.
【００２８】また、−５０℃〜２００℃の温度範囲内に
おける熱サイクルや温度変化に対し、セラミック体２と
金属からなる給電端子５との熱膨張差による応力を吸収
し、セラミック体２の破損を防止するためには、接着層
６の弾性率を５〜９０ＧＰａ、好ましくは１０〜４０Ｇ
Ｐａ、望ましくは１５〜３５ＧＰａとすることが良い。In addition, due to a thermal cycle or a temperature change in a temperature range of -50 ° C. to 200 ° C., a stress due to a difference in thermal expansion between the ceramic body 2 and the power supply terminal 5 made of metal is absorbed, and the ceramic body 2 is damaged. In order to prevent this, the elastic modulus of the adhesive layer 6 is 5 to 90 GPa, preferably 10 to 40 GPa.
Pa, preferably 15 to 35 GPa.
【００２９】なぜなら、接着層６の弾性率が５ＧＰａ未
満であると、−５０℃〜２００℃の温度範囲内における
熱サイクルや温度変化によって給電端子５の緩みが生じ
易く、給電端子５が脱落する恐れがあるからであり、逆
に接着層６の弾性率が９０ＧＰａを超えると、セラミッ
ク体２と金属からなる給電端子５との間の熱膨張差によ
る応力が吸収する効果が小さく、セラミック体２にクラ
ックが生じ易くなるからである。If the elastic modulus of the adhesive layer 6 is less than 5 GPa, the power supply terminal 5 is easily loosened due to a heat cycle or a temperature change in a temperature range of -50 ° C. to 200 ° C., and the power supply terminal 5 falls off. On the contrary, if the elastic modulus of the adhesive layer 6 exceeds 90 GPa, the effect of absorbing the stress due to the difference in thermal expansion between the ceramic body 2 and the power supply terminal 5 made of metal is small, and the ceramic body 2 This is because cracks are more likely to occur.
【００３０】ところで、セラミック体２を形成するセラ
ミックスとしては、アルミナ質焼結体、窒化珪素質焼結
体、窒化アルミニウム質焼結体等を用いることができ
る。Incidentally, as ceramics forming the ceramic body 2, an alumina sintered body, a silicon nitride sintered body, an aluminum nitride sintered body, or the like can be used.
【００３１】また、給電端子５を形成する金属として
は、セラミック体２との熱膨張差ができるだけ小さいも
のが良く、好ましくは熱膨張差が２×１０-7／℃以下で
あるものが良く、例えばセラミック体２が窒化アルミニ
ウ質焼結体からなる場合、給電端子５はＦｅ−Ｃｏ−Ｎ
ｉ合金を用いれば良い。The metal forming the power supply terminal 5 preferably has a difference in thermal expansion from the ceramic body 2 as small as possible, and preferably has a difference in thermal expansion of 2 × 10 −7 / ° C. or less. For example, when the ceramic body 2 is made of an aluminum nitride sintered body, the power supply terminal 5 is made of Fe—Co—N
An i-alloy may be used.
【００３２】なお、セラミック体２に形成する凹部２ａ
の形状としては特に限定するものではないが、円形であ
るものが製作性の点で好ましい。ただし、凹部２ａの内
径が１５ｍｍを超えると、切削加工時に凹部２ａの開口
エッジ部に欠けやクラックが発生し易くなり、逆に凹部
２ａの内径が１．５ｍｍより小さくなると、給電端子５
の径が小さくなり、リード線の取り付けにあたってネジ
止め等の手段にて簡単に取り付けることができなくなる
といった不都合がある。The recess 2a formed in the ceramic body 2
The shape is not particularly limited, but a circular shape is preferable in terms of manufacturability. However, if the inner diameter of the concave portion 2a exceeds 15 mm, chipping or cracking is likely to occur at the opening edge of the concave portion 2a during cutting, and conversely, if the internal diameter of the concave portion 2a is smaller than 1.5 mm, the power supply terminal 5
Has a disadvantage that the diameter of the lead wire becomes small, so that the lead wire cannot be easily attached by means such as screwing.
【００３３】その為、セラミック体２に形成する凹部２
ａの内径は１．５〜１５ｍｍの円形孔とすることが良
い。Therefore, the concave portion 2 formed in the ceramic body 2
The inner diameter of a is preferably a circular hole of 1.5 to 15 mm.
【００３４】また、セラミック体２の凹部２ａに挿入す
る給電端子５は、その挿入部５ａの外径を、凹部２ａの
内径との差が０．０５〜０．３ｍｍとなるようにするこ
とが良い。The outer diameter of the insertion portion 5a of the power supply terminal 5 inserted into the concave portion 2a of the ceramic body 2 is set so that the difference from the inner diameter of the concave portion 2a is 0.05 to 0.3 mm. good.
【００３５】これは、凹部２ａの内径と挿入部５ａの外
径との差が０．０５ｍｍ未満では、挿入部５ａを凹部２
ａ内に挿入することが難しく、凹部２ａのコーナー部等
よりセラミック体２にクラックを発生させる恐れがある
からであり、逆に凹部２ａの内径と挿入部５ａの外径と
の差が０．３ｍｍを超えると、給電端子５とセラミック
体２に設けられた凹部２ａの間の接着層６の層厚みが大
きくなり、温度サイクルによる接着層６の膨張や収縮
が、給電端子５と凹部２ａとの間隔の変化に対して追従
することができず、接着層６が凹部２ａより剥離する恐
れがあるからである。When the difference between the inner diameter of the recess 2a and the outer diameter of the insertion portion 5a is less than 0.05 mm, the insertion portion 5a is
This is because it is difficult to insert the inside of the concave portion 2a, and there is a possibility that cracks may be generated in the ceramic body 2 from the corners of the concave portion 2a or the like. When the thickness exceeds 3 mm, the thickness of the adhesive layer 6 between the power supply terminal 5 and the concave portion 2a provided in the ceramic body 2 increases, and the expansion and contraction of the adhesive layer 6 due to the temperature cycle are caused by the power supply terminal 5 and the concave portion 2a. This is because the adhesive layer 6 may not be able to follow the change in the distance, and the adhesive layer 6 may peel off from the concave portion 2a.
【００３６】次に、給電端子５の接合方法について説明
する。Next, a method of joining the power supply terminals 5 will be described.
【００３７】まず、電極４を埋設したセラミック体２を
用意する。なお、セラミック体２は、セラミックグリー
ンシートを複数枚積み重ね、あるセラミックグリーンシ
ート間に導体層を形成しておいたグリーンシート積層体
を焼成することにより形成したものや、生のセラミック
成形体上に導体層を配置し、該導体層を覆うように生の
セラミック成形体上にセラミック粉末を充填し、圧力を
加えて導体層を埋設した生のセラミック成形体を形成し
たあと焼成することにより形成したもの、あるいは上記
導体層を覆うように生のセラミック成形体上にセラミッ
ク粉末を充填し、圧力を加えながら加熱して焼成するこ
とにより形成したものでも構わない。First, a ceramic body 2 having electrodes 4 embedded therein is prepared. The ceramic body 2 is formed by stacking a plurality of ceramic green sheets and firing a green sheet laminate in which a conductor layer is formed between certain ceramic green sheets, or on a raw ceramic molded body. A conductor layer was arranged, and the green ceramic molded body was filled with ceramic powder so as to cover the conductor layer, pressure was applied to form a green ceramic molded body in which the conductor layer was buried, and then firing was performed. It may be formed by filling ceramic powder on a green ceramic molded body so as to cover the above-mentioned conductor layer, heating and firing while applying pressure.
【００３８】そして、セラミック体２の表面に研削加工
にて電極４の一部が露出する凹部２ａを穿孔する。この
凹部２ａの形成にあたっては、円柱状体の外周にダイヤ
モンド砥粒を電着等にて固着した工具を用い、セラミッ
ク体２にクラックを発生させないようにするため、送り
速度を１ｍｍ／分以下の速度で行うことが好ましい。Then, a concave portion 2a where a part of the electrode 4 is exposed is drilled in the surface of the ceramic body 2 by grinding. In forming the concave portion 2a, a feed rate of 1 mm / min or less is used to prevent cracks from being generated in the ceramic body 2 by using a tool in which diamond abrasive grains are fixed to the outer periphery of the columnar body by electrodeposition or the like. It is preferred to work at speed.
【００３９】次に、この穿孔した凹部２ａの内壁面（電
極４の露出部も含む）に、導電性粒子を１０〜９０容量
％の範囲で含有する樹脂系接着剤を塗布し、給電端子５
の挿入部５ａを凹部２ａ内に挿入する。しかる後、２４
時間以上室温で樹脂系接着剤を硬化させるか、あるいは
１５０℃以下の温度で６時間程加熱して樹脂系接着剤を
硬化させて接着層６を形成すれば良い。Next, a resin adhesive containing conductive particles in a range of 10 to 90% by volume is applied to the inner wall surface (including the exposed portion of the electrode 4) of the perforated concave portion 2a.
Is inserted into the recess 2a. After a while, 24
The adhesive layer 6 may be formed by curing the resin-based adhesive at room temperature for at least one hour, or by heating the resin-based adhesive at a temperature of 150 ° C. or less for about 6 hours to cure the resin-based adhesive.
【００４０】このように、本発明によれば、大きな熱を
加える必要がないことから、セラミック体２と金属から
なる給電端子５との熱膨張差による応力によってセラミ
ック体２を破損させることなく、容易に製造することが
できる。As described above, according to the present invention, since it is not necessary to apply a large amount of heat, the ceramic body 2 is not damaged by stress caused by a difference in thermal expansion between the ceramic body 2 and the power supply terminal 5 made of metal. It can be easily manufactured.
【００４１】以上、本発明の実施形態について説明した
が、本発明は図１に示したものだけに限定されるもので
はなく、例えば、図３や図４に示す電極内蔵体にも適用
することができる。The embodiment of the present invention has been described above. However, the present invention is not limited to the embodiment shown in FIG. 1, but may be applied to, for example, the electrode built-in body shown in FIGS. Can be.
【００４２】図３は、本発明に係る電極内蔵体からなる
ウエハ支持部材の他の例を示す断面図で、電極４を内蔵
したセラミック体２が、セラミック焼結体やサファイア
からなる誘電体層１１の上面をウエハの設置面３とし、
上記誘電体層１１の下面に電極４を、メッキ法やメタラ
イズ法、あるいはＣＶＤ法、ＰＶＤ法、スパッタリング
法等の成膜手段にて形成し、上記電極４を覆うように上
記誘電体層１１の下面に、セラミック焼結体からなるベ
ース１２を接着剤やロウ材にて接合した接合構造体から
なる以外は図１と同様の構造をしたもので、図２に示す
給電構造にて給電端子５を接合してある。FIG. 3 is a cross-sectional view showing another example of a wafer support member comprising an electrode-containing body according to the present invention, wherein a ceramic body 2 containing an electrode 4 is a dielectric layer made of a ceramic sintered body or sapphire. 11 is an installation surface 3 of the wafer,
An electrode 4 is formed on the lower surface of the dielectric layer 11 by a plating method, a metallization method, or a film forming means such as a CVD method, a PVD method, and a sputtering method. The lower surface has the same structure as that of FIG. 1 except that it has a joint structure in which a base 12 made of a ceramic sintered body is joined with an adhesive or a brazing material. Are joined.
【００４３】また、図４は、本発明に係る電極内蔵体か
らなるウエハ支持部材のさらに他の例を示す断面図で、
電極４を内蔵したセラミック体２が、電極４を埋設した
樹脂層１３の上面をウエハの設置面３とするとともに、
樹脂層１３の下面に、セラミック焼結体からなるベース
１２を接着剤やロウ材にて接合した接合構造体からなる
以外は図１と同様の構造をしたもので、図２に示す給電
構造にて給電端子５を接合してある。FIG. 4 is a cross-sectional view showing still another example of a wafer support member comprising an electrode-containing body according to the present invention.
The upper surface of the resin layer 13 in which the electrodes 4 are buried is used as the wafer mounting surface 3 by the ceramic body 2 having the electrodes 4 embedded therein.
The structure is the same as that shown in FIG. 1 except that the base 12 made of a ceramic sintered body is joined to the lower surface of the resin layer 13 with an adhesive or a brazing material. And the power supply terminal 5 is joined.
【００４４】また、本実施形態ではウエハ支持部材を例
にとって説明したが、この他に、オゾン発生器、静電吸
着部材、酸素センサー、気化装置、ダイボンディング装
置等の電極内蔵体にも適用できることは言う迄もない。In this embodiment, the wafer support member is described as an example. However, the present invention is also applicable to an electrode built-in body such as an ozone generator, an electrostatic adsorption member, an oxygen sensor, a vaporizer, and a die bonding device. Needless to say.
【００４５】[0045]
【実施例】以下、本発明の具体例をウエハ支持部材を例
にとって説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a first embodiment of the present invention.
【００４６】まず、セラミック体２を形成するため、平
均粒子径が１．２μｍ程度である純度９９．０％のＡｌ
Ｎ粉末に、バインダー及び溶媒のみを添加混合して泥漿
を製作した後、ドクターブレード法にて厚さ０．５ｍｍ
程度のＡｌＮグリーンシートを複数枚製作し、このう
ち、数枚のＡｌＮグリーンシートを積層した後、その表
面にスクリーン印刷法でもってタングステン粉末に若干
のＡｌＮ粉末を混ぜた金属ペーストからなる半円状膜を
円形に敷設し、さらに残りのＡｌＮグリーンシートを積
み重ね、５０ｋｇ／ｃｍ2の圧力で加圧圧着してグリー
ンシート積層体を形成した。その後、切削加工を施して
円板状とした後、窒素雰囲気下で２０００℃程度の焼成
温度で２時間程度焼成することにより、純度９９．０％
の窒化アルミニウム質焼結体からなり、その内部に電極
を埋設したセラミック体を得た。First, in order to form the ceramic body 2, Al having a mean particle diameter of about 1.2 μm and a purity of 99.0% was used.
N powder was mixed with only a binder and a solvent to produce a slurry, and then 0.5 mm thick by a doctor blade method.
A plurality of AlN green sheets are manufactured, and several AlN green sheets are laminated, and then a semi-circular metal paste made by mixing a small amount of AlN powder with tungsten powder by a screen printing method on the surface. The film was laid in a circular shape, and the remaining AlN green sheets were further stacked and pressed under a pressure of 50 kg / cm 2 to form a green sheet laminate. Then, after performing a cutting process to obtain a disc shape, the product is fired at a firing temperature of about 2000 ° C. for about 2 hours in a nitrogen atmosphere to obtain a purity of 99.0%.
And a ceramic body having electrodes embedded therein was obtained.
【００４７】しかる後、セラミック体の外径を約２００
ｍｍ、厚みを８ｍｍとした後、セラミック体の一方の主
面（最も広い面）に、研摩加工を施して中心線平均粗さ
（Ｒａ）０．８μｍの鏡面に仕上げて設置面を形成する
とともに、セラミック体の他方の主面に電極の一部が露
出する円形の凹部を研削加工にて穿孔し、凹部中に、導
電性粒子として最大粒子径が２０μｍのＡｇを用い、１
０容量％の割合で添加したエポキシ系接着剤を塗布し、
Ｆｅ−Ｃｏ−Ｎｉ系合金からなる給電端子を挿入した
後、１５０℃の温度で加熱硬化させて接着層を形成し、
給電端子を凹部内に接着固定することによりウエハ支持
部材を製作した。Thereafter, the outer diameter of the ceramic body was reduced to about 200
mm and a thickness of 8 mm, one main surface (the widest surface) of the ceramic body is polished to a mirror surface having a center line average roughness (Ra) of 0.8 μm to form an installation surface. In the other main surface of the ceramic body, a circular concave portion where a part of the electrode is exposed is pierced by grinding, and Ag having a maximum particle diameter of 20 μm is used as the conductive particle in the concave portion.
Apply an epoxy adhesive added at a rate of 0% by volume,
After inserting a power supply terminal made of an Fe-Co-Ni-based alloy, the mixture is heated and cured at a temperature of 150 ° C to form an adhesive layer,
A wafer support member was manufactured by adhesively fixing the power supply terminal in the recess.
【００４８】このようにして製作したウエハ支持部材
は、給電端子の接合時にセラミック体を破損させること
がなく、容易に製作することができた。The wafer supporting member manufactured as described above could be easily manufactured without damaging the ceramic body at the time of joining the power supply terminals.
【００４９】[0049]
【実験例】（実験例１）そこで、実施例のウエハ支持部
材のうち、接着層を形成するエポキシ系接着剤に含有さ
せる導電性粒子の割合を異ならせた時の給電端子と電極
との間の抵抗値、給電端子の引っ張り強度、ウエハ支持
部材に熱サイクルを加えた時の通電不良の発生率につい
てそれぞれ調べる実験を行った。[Experimental example] (Experimental example 1) Therefore, in the wafer support member of the embodiment, when the ratio of the conductive particles contained in the epoxy-based adhesive forming the adhesive layer was changed, the distance between the power supply terminal and the electrode was changed. An experiment was conducted to examine the resistance value, the tensile strength of the power supply terminal, and the occurrence rate of energization failure when a thermal cycle was applied to the wafer support member.
【００５０】そして、本実験では、給電端子と電極との
間の抵抗値が０．５Ω以下であるものを良好とし、○で
示し、０．５Ωを超えるものは不良とし、×で示した。
また、給電端子の引っ張り強度においては、引っ張り強
度が９．８Ｎ以上であるものを良好とし、○で示し、
９．８Ｎ未満であるものを不良とし、×で示した。さら
に、ウエハ支持部材に熱サイクルを加えた時の通電不良
の発生率については、各試料をそれぞれ２０個ずつ用意
し、昇降温レートを５０℃／分とし、−５０℃と２００
℃でそれぞれ１０分間保持する温度サイクルを１０００
サイクル実施後に、さらに２００℃に加熱して１０００
時間保持した後、給電端子と電極との間の抵抗を測定
し、初期の抵抗値に対する変化率を１％以下とできなか
ったものの発生率を示し、この発生率が５％以下である
ものを良好とした。In this experiment, those having a resistance value of 0.5Ω or less between the power supply terminal and the electrode were regarded as good, indicated by ○, and those exceeding 0.5Ω were regarded as defective, and indicated by ×.
Regarding the tensile strength of the power supply terminal, those having a tensile strength of 9.8 N or more were regarded as good, indicated by ○,
Those having a value of less than 9.8 N were regarded as defective and indicated by x. Further, regarding the incidence rate of energization failure when a thermal cycle was applied to the wafer supporting member, 20 samples were prepared for each sample, and the temperature rising / falling rate was set to 50 ° C./min.
Temperature cycle for 10 minutes each at 1000C
After performing the cycle, heat to 200 ° C.
After holding for a period of time, the resistance between the power supply terminal and the electrode was measured, and the rate of change in the initial resistance value could not be reduced to 1% or less. Good.
【００５１】それぞれの結果は表１に示す通りである。
なお、給電端子と電極との間の抵抗値は四端子法により
測定した。The results are as shown in Table 1.
The resistance between the power supply terminal and the electrode was measured by a four-terminal method.
【００５２】[0052]
【表１】 [Table 1]
【００５３】この結果、試料Ｎｏ．２〜９のように、導
電性粒子の含有量が１０〜９０容量％の範囲あるもの
は、いずれも給電端子と電極との間の抵抗値を０．５Ω
以下とすることができ、十分な導電性が得られるととも
に、−５０℃から２００℃の熱サイクルに対しても抵抗
値変化が少なく、熱サイクルによる導通不良発生率も５
％以下と少なく、さらに、給電端子を強固に接合するこ
とができ、優れていた。As a result, Sample No. In the case where the content of the conductive particles is in the range of 10 to 90% by volume, such as 2 to 9, the resistance between the power supply terminal and the electrode is 0.5 Ω.
Or less, sufficient conductivity is obtained, the resistance change is small even in a heat cycle from -50 ° C to 200 ° C, and the rate of occurrence of conduction failure due to the heat cycle is 5%.
% Or less, and the power supply terminal can be firmly joined, which is excellent.
【００５４】この結果、接合層を形成する樹脂中に含有
させる導電性粒子の含有量は１０〜９０容量％の範囲で
含有すれば良いことが判る。As a result, it is understood that the content of the conductive particles contained in the resin forming the bonding layer should be in the range of 10 to 90% by volume.
【００５５】（実験例２）次に、接着層を形成する樹脂
の種類及び導電性粒子の種類をそれぞれ異ならせ、実験
例１と同様の実験を行った。(Experimental Example 2) Next, the same experiment as in Experimental Example 1 was performed, except that the kind of the resin forming the adhesive layer and the kind of the conductive particles were different.
【００５６】それぞれの結果は表２に示す通りである。The results are as shown in Table 2.
【００５７】[0057]
【表２】 [Table 2]
【００５８】この結果、試料Ｎｏ．１２〜１４，１６，
１７，１９，２０，２４のように、導電性粒子として
金、銀、銅、錫、アルミニウムを用いるとともに、導電
性接着剤を形成する樹脂成分として、エポキシ樹脂、シ
リコン樹脂、フッ素樹脂のいづれか１種を用いることに
より、給電端子と電極との間の抵抗値を０．５Ω以下と
することができ、十分な導電性が得られるとともに、−
５０℃から２００℃の熱サイクル試験に対しても抵抗値
の変化が少なく、導通不良率を５％以下に抑えることが
でき、さらに、給電端子を強固に接合することができる
ことが判る。As a result, Sample No. 12-14,16,
17, 19, 20, and 24, gold, silver, copper, tin, and aluminum are used as the conductive particles, and one of an epoxy resin, a silicon resin, and a fluororesin is used as a resin component that forms the conductive adhesive. By using the seed, the resistance between the power supply terminal and the electrode can be reduced to 0.5Ω or less, sufficient conductivity can be obtained, and −
It can be seen that even in a thermal cycle test at 50 ° C. to 200 ° C., the change in resistance value is small, the conduction failure rate can be suppressed to 5% or less, and the power supply terminal can be firmly joined.
【００５９】この結果、接合層を形成する樹脂系接着剤
中に含有させる導電性粒子は、金、銀、銅、錫、アルミ
ニウムを用いるとともに、樹脂系接着剤を形成する樹脂
成分は、エポキシ樹脂、シリコン樹脂、フッ素樹脂のい
づれか１種を用いることが良い。As a result, gold, silver, copper, tin, and aluminum are used as the conductive particles contained in the resin adhesive forming the bonding layer, and the resin component forming the resin adhesive is epoxy resin. , Silicon resin, or fluororesin is preferably used.
【００６０】[0060]
【発明の効果】以上のように、本発明によれば、電極を
内蔵したセラミック体の表面又は電極を内蔵した樹脂層
を接合したセラミック体の表面に、上記電極の一部が露
出する凹部を設け、該凹部に給電端子を挿入するととも
に、該給電端子と上記凹部とを、導電性粒子を１０〜９
０容量％の範囲で含有する樹脂系接着剤からなる接着層
にて接着固定して電極内蔵体を構成したことから、給電
端子と電極との間の十分な導電性が得られ、かつ−５０
度〜２００度の温度範囲で熱サイクルが加わったとして
もセラミック体を破損させることなく確実に給電端子を
接合することができる。しかも、給電端子の接合時に大
きな熱を加える必要がないため、給電端子の接続を容易
に行うことができる。As described above, according to the present invention, a concave portion in which a part of the electrode is exposed is formed on the surface of the ceramic body containing the electrode or the surface of the ceramic body joined with the resin layer containing the electrode. A power supply terminal is inserted into the concave portion, and the power supply terminal and the concave portion are connected with conductive particles by 10 to 9 times.
Since the electrode built-in body was formed by adhering and fixing with an adhesive layer made of a resin adhesive contained in the range of 0% by volume, sufficient conductivity between the power supply terminal and the electrode was obtained, and -50 was obtained.
Even if a heat cycle is applied in a temperature range of degrees to 200 degrees, the power supply terminal can be securely joined without damaging the ceramic body. In addition, since it is not necessary to apply a large amount of heat when joining the power supply terminals, the connection of the power supply terminals can be easily performed.
【００６１】特に、上記導電性粒子として、金、銀、
銅、錫、アルミニウムのうちの少なくとも１種以上を用
いるとともに、樹脂系接着剤を形成する樹脂として、エ
ポキシ樹脂、シリコン樹脂、フッ素樹脂のいずれか１種
を用いれば上記効果を効果的に達成することができる。In particular, as the conductive particles, gold, silver,
The effect described above can be effectively achieved by using at least one of copper, tin, and aluminum and using any one of an epoxy resin, a silicon resin, and a fluororesin as a resin forming the resin-based adhesive. be able to.
【００６２】その為、本発明の電極内蔵体を用いて電極
が静電吸着用電極又はプラズマ電極からなるウエハ支持
部材を形成すれば、電極が静電吸着用電極である時に
は、ウエハを吸着固定するのに十分な静電気力を発生さ
せることができ、また電極がプラズマ電極である時に
は、各種処理を行うのに十分なプラスマを発生させるこ
とができる。Therefore, if a wafer supporting member is formed using an electrode for electrostatic attraction or a plasma electrode using the electrode built-in body of the present invention, when the electrode is an electrode for electrostatic attraction, the wafer is attracted and fixed. When the electrode is a plasma electrode, it is possible to generate sufficient plasma for performing various processes.
【図１】本発明に係る電極内蔵体の一例であるウエハ支
持部材を示す断面図である。FIG. 1 is a cross-sectional view showing a wafer support member as an example of an electrode-containing body according to the present invention.
【図２】図１のウエハ支持部材における給電構造を拡大
した断面図である。FIG. 2 is an enlarged sectional view of a power supply structure in the wafer support member of FIG.
【図３】本発明に係るウエハ支持部材の他の例を示す断
面図である。FIG. 3 is a sectional view showing another example of the wafer support member according to the present invention.
【図４】本発明に係るウエハ支持部材のさらに他の例を
示す断面図である。FIG. 4 is a sectional view showing still another example of the wafer support member according to the present invention.
【図５】従来の電極内蔵体の一例であるウエハ支持部材
を示す断面図である。FIG. 5 is a cross-sectional view showing a wafer support member as an example of a conventional electrode built-in body.
【図６】図５のウエハ支持部材における給電構造の一例
を示す拡大断面図である。FIG. 6 is an enlarged cross-sectional view showing an example of a power supply structure in the wafer support member of FIG.
【図７】図５のウエハ支持部材における給電構造の他の
例を示す拡大断面図である。FIG. 7 is an enlarged sectional view showing another example of the power supply structure in the wafer support member of FIG.
１，２１：ウエハ支持部材 ２，２２：セラミック体
２ａ，２２ａ：凹部 ３，２３：設置面 ４，２４：電極 ５，２５：給電端
子 ６：接着層1,21: Wafer support member 2,22: Ceramic body
2a, 22a: concave portion 3, 23: installation surface 4, 24: electrode 5, 25: power supply terminal 6: adhesive layer
Claims (5)
極を内蔵した樹脂層を接合したセラミック体の表面に、
上記電極の一部が露出する凹部を設け、該凹部に給電端
子を挿入するとともに、該給電端子と上記凹部とを、導
電性粒子を１０〜９０容量％の範囲で含有する樹脂系接
着剤からなる接着層にて接着固定したことを特徴とする
電極内蔵体。1. The method according to claim 1, wherein the surface of the ceramic body including the electrodes or the surface of the ceramic body to which the resin layer including the electrodes is bonded is provided
The power supply terminal is inserted into the concave portion, and the power supply terminal and the concave portion are formed from a resin adhesive containing conductive particles in a range of 10 to 90% by volume. A built-in electrode body characterized by being adhered and fixed by an adhesive layer.
ミニウムのうちの少なくとも１種以上からなることを特
徴とする請求項１に記載の電極内蔵体。2. The electrode built-in body according to claim 1, wherein said conductive particles are made of at least one of gold, silver, copper, tin and aluminum.
キシ樹脂、シリコン樹脂、フッ素樹脂のいずれか１種か
らなることを特徴とする請求項１又は請求項２に記載の
電極内蔵体。3. The electrode built-in body according to claim 1, wherein the resin forming the resin-based adhesive is any one of an epoxy resin, a silicon resin, and a fluororesin.
電極内蔵体を形成する電極を内蔵したセラミック体の表
面又は電極を内蔵した樹脂層の表面をウエハの設置面と
することを特徴とするウエハ支持部材。4. The wafer mounting surface according to claim 1, wherein the surface of the ceramic body or the surface of the resin layer containing the electrodes that forms the electrode built-in body according to claim 1 is used as the wafer mounting surface. A wafer support member characterized by the following.
電極のいずれかであることを特徴とする請求項４に記載
のウエハ支持部材。5. The wafer supporting member according to claim 4, wherein said electrode is one of an electrostatic attraction electrode and a plasma electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000333837A JP4548928B2 (en) | 2000-10-31 | 2000-10-31 | Electrode built-in body and wafer support member using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000333837A JP4548928B2 (en) | 2000-10-31 | 2000-10-31 | Electrode built-in body and wafer support member using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002141404A true JP2002141404A (en) | 2002-05-17 |
| JP4548928B2 JP4548928B2 (en) | 2010-09-22 |
Family
ID=18809856
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000333837A Expired - Fee Related JP4548928B2 (en) | 2000-10-31 | 2000-10-31 | Electrode built-in body and wafer support member using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4548928B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006287213A (en) * | 2005-03-07 | 2006-10-19 | Ngk Spark Plug Co Ltd | Electrostatic chuck, electrostatic chuck device, and method of fabricating electrostatic chuck, vacuum chuck, vacuum chuck device and method of fabricating vacuum chuck, and ceramic heater, ceramic heater device and method of fabricating ceramic heater |
| KR100775884B1 (en) | 2005-10-28 | 2007-11-15 | 니뽄 가이시 가부시키가이샤 | Jointing structure between ceramic substrate and power supply connector |
| JP2008305968A (en) * | 2007-06-07 | 2008-12-18 | Sei Hybrid Kk | Electrode connection structure of wafer holder |
| JP2012527125A (en) * | 2009-05-15 | 2012-11-01 | インテグリス・インコーポレーテッド | Electrostatic chuck with polymer protrusions |
| US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
| JP2015058904A (en) * | 2013-09-20 | 2015-03-30 | ダイキョーニシカワ株式会社 | Formation method of conductive circuit to vehicular window panel |
| US9025305B2 (en) | 2010-05-28 | 2015-05-05 | Entegris, Inc. | High surface resistivity electrostatic chuck |
| US9543187B2 (en) | 2008-05-19 | 2017-01-10 | Entegris, Inc. | Electrostatic chuck |
| CN108701642A (en) * | 2016-03-04 | 2018-10-23 | 应用材料公司 | Substrate support for high-temperature technology |
| WO2020004564A1 (en) * | 2018-06-28 | 2020-01-02 | 京セラ株式会社 | Method for producing member for semiconductor production apparatuses, and member for semiconductor production apparatuses |
| JP2020155708A (en) * | 2019-03-22 | 2020-09-24 | 京セラ株式会社 | Wafer mounting structure, wafer mounting device using wafer mounting structure, and substrate structure |
| KR20210065895A (en) | 2018-09-27 | 2021-06-04 | 스미토모 오사카 세멘토 가부시키가이샤 | electrostatic chuck device |
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| JP2000332091A (en) * | 1999-05-25 | 2000-11-30 | Toto Ltd | Electrostatic chuck and treatment device |
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2000
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| JP2000236000A (en) * | 1999-02-17 | 2000-08-29 | Mitsui High Tec Inc | Bump for connecting with outside |
| JP2000332091A (en) * | 1999-05-25 | 2000-11-30 | Toto Ltd | Electrostatic chuck and treatment device |
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|---|---|---|---|---|
| JP2006287213A (en) * | 2005-03-07 | 2006-10-19 | Ngk Spark Plug Co Ltd | Electrostatic chuck, electrostatic chuck device, and method of fabricating electrostatic chuck, vacuum chuck, vacuum chuck device and method of fabricating vacuum chuck, and ceramic heater, ceramic heater device and method of fabricating ceramic heater |
| KR100775884B1 (en) | 2005-10-28 | 2007-11-15 | 니뽄 가이시 가부시키가이샤 | Jointing structure between ceramic substrate and power supply connector |
| JP2008305968A (en) * | 2007-06-07 | 2008-12-18 | Sei Hybrid Kk | Electrode connection structure of wafer holder |
| US10395963B2 (en) | 2008-05-19 | 2019-08-27 | Entegris, Inc. | Electrostatic chuck |
| US9543187B2 (en) | 2008-05-19 | 2017-01-10 | Entegris, Inc. | Electrostatic chuck |
| JP2012527125A (en) * | 2009-05-15 | 2012-11-01 | インテグリス・インコーポレーテッド | Electrostatic chuck with polymer protrusions |
| US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
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| US9721821B2 (en) | 2009-05-15 | 2017-08-01 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
| US9025305B2 (en) | 2010-05-28 | 2015-05-05 | Entegris, Inc. | High surface resistivity electrostatic chuck |
| JP2015058904A (en) * | 2013-09-20 | 2015-03-30 | ダイキョーニシカワ株式会社 | Formation method of conductive circuit to vehicular window panel |
| CN108701642A (en) * | 2016-03-04 | 2018-10-23 | 应用材料公司 | Substrate support for high-temperature technology |
| CN108701642B (en) * | 2016-03-04 | 2023-07-14 | 应用材料公司 | Substrate support assembly for high temperature processes |
| WO2020004564A1 (en) * | 2018-06-28 | 2020-01-02 | 京セラ株式会社 | Method for producing member for semiconductor production apparatuses, and member for semiconductor production apparatuses |
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| US11318572B2 (en) | 2018-09-27 | 2022-05-03 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
| JP2020155708A (en) * | 2019-03-22 | 2020-09-24 | 京セラ株式会社 | Wafer mounting structure, wafer mounting device using wafer mounting structure, and substrate structure |
| JP7339753B2 (en) | 2019-03-22 | 2023-09-06 | 京セラ株式会社 | Wafer mounting structure, wafer mounting apparatus and base structure using wafer mounting structure |
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| WO2023106445A1 (en) * | 2021-12-08 | 2023-06-15 | 주식회사 미코세라믹스 | Cryogenic susceptor and electric connector assembly used therein |
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