JP4454505B2 - Wafer support member - Google Patents

Description

  The present invention relates to a ceramic electrostatic chuck and a ceramic heater having a function of holding a wafer such as a semiconductor wafer or a glass substrate for liquid crystal and generating a plasma by applying a high frequency in a manufacturing process of a semiconductor or a liquid crystal substrate. And the like.

  Conventionally, plasma is generated in a film forming process such as CVD for forming a thin film on a wafer such as a semiconductor wafer or a glass substrate for liquid crystal, or in a dry etching process for performing fine processing on the wafer, among manufacturing processes for semiconductors and liquid crystal substrates. An apparatus having a mechanism is used, and among the electrodes for generating plasma, one electrode is embedded in a plate-shaped ceramic body, and the surface of the plate-shaped ceramic body is used as a mounting surface on which a wafer is placed Is used.

  FIG. 4 is a sectional view showing a conventional wafer support member 32.

  An electrostatic adsorption electrode 42 is embedded in the plate-shaped ceramic body 34. Tantalum, tungsten, molybdenum, platinum, and alloys thereof were used for the electrostatic adsorption electrode 42.

  In addition, an insulating layer 34b is formed on the main wafer mounting surface 34a. As the ceramic constituting the plate-like ceramic body 34 and the insulating layer 34b, nitride ceramics such as silicon nitride having excellent thermal shock resistance and aluminum nitride having excellent corrosion resistance are used. In addition, silicon carbide and alumina-silicon carbide composite materials have also been used.

  A power supply terminal 40 is embedded in the other main surface of the plate-like ceramic body 34, and the power supply terminal 40 is connected to the electrostatic chucking electrode 42. An end surface of the power supply terminal 40 is exposed on the other main surface of the plate-like ceramic body 34.

Further, in order to prevent damage to the plate-like ceramic body 34 due to heat during brazing or thermal cycles during use, the power supply terminal 40 has tungsten, molybdenum, or Fe—Ni that approximates the thermal expansion coefficient of the plate-like ceramic body 34. A -Co alloy was used.
Japanese Patent Laid-Open No. 9-134951 JP 2003-188248 A

  However, the conventional wafer support member 32 has a problem that when the high frequency power is applied to the power supply terminal 40 of the wafer support member 32 in order to generate plasma, the power supply terminal 40 generates heat.

  This is because the high frequency flows on the surface of the power supply terminal 40, but the power supply terminal 40 made of tungsten, molybdenum, Fe—Ni—Co alloy or the like used to approximate the thermal expansion difference with the plate-like ceramic body 34 is used. It was easy to generate heat because of its high resistance to high frequency.

  When the power feeding terminal 40 generates heat, the temperature of the mounting surface 34a located above the power feeding terminal 40 partially increases, and the temperature of the wafer W placed on the mounting surface 34a is also distributed over the temperature of the mounting surface 34a. As a result, there is a problem that the temperature distribution of the wafer W cannot be made uniform, and the film forming accuracy and the etching accuracy are deteriorated.

Therefore, the wafer support member of the present invention has been made in view of the above problems, a plate-like the one main surface of the ceramic body and mounting surface mounting the wafer, e Bei electrodes therein, the plate other than the mounting surface shaped ceramic body inner wall surface to form a conductive layer connected to the electrode and the electrical plasma is connected electrical to through the electrode and the conductive layer on the recessed portion of the recess together to form a recess in the surface of the In the wafer support member in which a high-frequency power is applied to generate a power supply, and a power supply terminal made of any one of tungsten, molybdenum, and Fe—Ni—Co alloy is mounted so that one side is exposed from the recess. forming a groove in the surface exposed from the recess of the terminal, led the conductive layer formed on the inner wall surface to cover the groove portion, a conductive layer resistance value is smaller than the feeding terminal It is characterized in.

Further, the wafer support member of the present invention having the above structure, the groove and the conductive layer is formed to the power supply terminal is characterized in that it is formed only on the side surfaces.

Furthermore, the wafer support member of the present invention is characterized in that, in each of the above-mentioned configurations, the average film thickness of the conductive layer is in the range of 3 to 100 μm.

Further, the wafer support member of the present invention, in the above-mentioned respective structures, the material of the conductive layer has a gold, silver, copper, the main component to Rukoto at least one of aluminum.

Furthermore, the wafer support member of the present invention is characterized in that, in each of the above configurations, the conductive layer is formed on the surface of the power supply terminal via a metal layer different from the conductive layer.

The wafer support member of the present invention is characterized in that , in each of the above-described configurations, the metal layer contains Ni as a main component.

Furthermore, the wafer support member of the present invention is characterized in that, in each of the above configurations, the arithmetic average roughness Ra of the surface on which the conductive layer or metal layer of the power feeding terminal is formed is 0.1 to 2.

  According to the present invention, when high frequency power is applied to the power supply terminal of the wafer support member in order to generate plasma, the power supply terminal is prevented from generating heat, the temperature difference in the wafer surface is made uniform, and the film formation rate and etching are reduced. A wafer support member with improved accuracy can be provided.

  Embodiments of the present invention will be described below.

  Fig.1 (a) is a top view of the wafer support member 2 which shows an example of this invention, (b) is sectional drawing of the XX line.

  The plate-like ceramic body 4 is formed in a substantially cylindrical body, has a step Q for placing a wafer on one main surface, and the surface of the step Q is a placement surface 4a on which the wafer W is placed, Inside the electrode, an electrode 12 for electrostatic adsorption is embedded as an electrode 12. Insulation is maintained between the mounting surface 4a of the plate-like ceramic body 4 and the electrostatic adsorption electrode 12 by the insulating portion 4b. In addition, a columnar recess 14 is formed on the other main surface of the plate-like ceramic body 4, and the power supply terminal 10 that is inserted into the recess 14 and electrically connected to the electrostatic chucking electrode 12 is fixed. It seems to be. The power supply terminal 10 is formed in a columnar shape, for example, a columnar shape, and is configured to be able to apply electric power to the electrostatic chucking electrode 12 from the rear end side as will be described later.

  When a DC voltage is applied to the electrostatic chucking electrode 12 via the power supply terminal 10, the wafer W can be fixed by developing an electrostatic chucking force between the wafer W and the mounting surface 4a. Further, if a high frequency is applied to the electrostatic attraction electrode 12, plasma or the like is generated above the wafer W, and processing such as film formation can be performed on the wafer W.

FIG. 2 is a sectional view showing in detail the periphery of the power supply terminal 10 of the wafer support member 2 of the present invention. In the wafer support member 2 of the present invention, the recess 14 formed in the other main surface of the plate-like ceramic body 4 is formed so as to penetrate the electrostatic chucking electrode 12. Accordingly, the electrostatic adsorption electrode 12 is exposed on the inner wall surface 16 of the recess 14. By forming the brazing material layer 18 as the conductive layer 22 on the inner wall surface 16 and inserting the feeding terminal 10 into the recess 14, the electrostatic chucking electrode 12 and the feeding terminal 10 are electrically connected via the brazing material layer 18. Connected. The power supply terminal 10 is mounted so that one side is exposed from the recess 14 when inserted into the recess 14.

  A conductive layer 22 is formed on the surface of the power supply terminal 10 exposed from the plate-like ceramic body 4. This is because by forming the conductive layer 22 having a resistance value smaller than that of the power supply terminal 10, a high frequency that easily flows through the surface layer flows smoothly. By causing the high frequency to flow smoothly, abnormal heat generation can be suppressed at the power supply terminal 10.

  Further, the power supply terminal 10 is provided with a groove 20. The groove 20 may be formed at any position on the surface of the power supply terminal 10. This is because the conductive layer 22 is uniformly formed on the surface of the power supply terminal 10. Since the groove 20 is formed in the power supply terminal 10, when forming the conductive layer 22, for example, as shown in FIG. 3, the brazing material 23 is hooked and melted in the groove 20 to form the conductive layer 22. can do. Thereby, the conductive layer 22 having a uniform film thickness can be formed on the entire surface of the power supply terminal 10. The groove 20 is preferably formed on the side surface of the power supply terminal 10.

  Reference numeral 18a denotes a layer in which a brazing material for forming the conductive layer 22 composed of the brazing material layer 18 is applied in the form of a paste.

  And by forming the film thickness of the conductive layer 22 uniformly using the groove 20 described above, the resistance of the surface of the power supply terminal 10 provided with the conductive layer 22 can be reduced. Even when a high-frequency current is passed, abnormal heat generation can be suppressed at the power supply terminal 10.

  Therefore, the conductive layer 22 is preferably formed continuously from the inner surface 10b of the groove 20 to the outer surface 10a of the power supply terminal. The brazing material 23 to be the conductive layer 22 is set in the groove 20 and heated in a high temperature furnace to melt the brazing material 23, so that the conductive layer 22 is formed on the groove inner surface 10 b and the outer surface 10 a of the power supply terminal 10 continuously. can do.

  In order to form the conductive layer 22 uniformly, the inner surface 10b on the plate ceramic body 4 side intersects the outer surface 10a at an angle of 60 to 110 degrees on the inner surface 10b of the groove 20 on the plate ceramic body 4 side. When the shape is linear, it is considered that when the linear brazing material 23 is fixed to the inner surface 10 b and the brazing material 23 is heated and melted, the conductive layer 22 is formed while the brazing material 23 accumulates on the inner surface 10 b. It is considered that the thickness becomes uniform. Further, the cross-sectional shape of the groove 20 is preferably rectangular in order to securely fix the linear brazing material 23, and if it is rectangular, it is preferable that there is no possibility of displacement even when the brazing material 23 is heated. Also, a square is preferable from the above viewpoint because it can be easily processed into the power supply terminal 10.

  In particular, the groove 20 is preferably formed on the outer periphery of the power supply terminal 10 in an annular shape around the power supply terminal 10 perpendicular to the longitudinal direction of the power supply terminal 10. Moreover, it is preferable that the average film thickness of the said conductive layer 22 is the range of 3-100 micrometers. This is because if the average film thickness of the conductive layer 22 is less than 3 μm, the low resistance effect by the conductive layer 22 on the surface of the power supply terminal 10 is lost, and the power supply terminal 10 generates heat. Further, when the average film thickness of the conductive layer 22 exceeds 100 μm, the conductive layer 22 is peeled off and the power supply terminal 10 generates heat. Therefore, the average film thickness of the conductive layer 22 is preferably in the range of 3 to 100 μm. More preferably, the range of 10-50 micrometers is good.

  The thickness of the conductive layer 22 can be measured using an ultrasonic flaw detector (HIS3HF). The ultrasonic flaw detector puts an object in a bathtub filled with water, applies ultrasonic waves and performs image processing from the position information of the ultrasonic waves reflected from the object, and develops it into a plan view and a cross-sectional view to show the interior of the object. Can be calculated and displayed. The thickness of the conductive layer 22 of the power supply terminal 10 in this case is that the ultrasonic wave is reflected at the interface between the conductive layer 22 and the power supply terminal 10 other than the conductive layer 22 therein, and the difference in ultrasonic reflection is image-processed. The thickness of the conductive layer 22 was determined by ultrasonic measurement of the thickness of the conductive layer 22 having a different color.

  In addition, the conductive layer 22 can polish, for example, a columnar longitudinal central cross section of the power supply terminal 10, and the thickness of the conductive layer can be measured directly from the cross section with a metal microscope or a scanning electron microscope. In order to facilitate detection of the conductive layer 22, the polished surface can be observed by etching.

The material of the conductive layer 22 is preferably at least one of gold, silver, copper, and aluminum as a main component. This is because the volume resistivity values of gold, silver, copper, and aluminum are 2.4 × 10 ⁻⁸ Ω · m, 1.6 × 10 ⁻⁸ Ω · m, 1.6 × 10 ⁻⁸ Ω · m, Each volume resistivity value of 5.5 × 10 ⁻⁸ Ω · m is small as 2.7 × 10 ⁻⁸ Ω · m, and is commonly used as a material for the general power supply terminal 10. This is because it is smaller than m, 5.8 × 10 ⁻⁸ Ω · m, and 48 × 10 ⁻⁸ Ω · m. That is, since the high-frequency current flows through the conductive layer 22 having a resistance value smaller than that of the material forming the power supply terminal 10, the high-frequency current can flow smoothly and heat generation of the power supply terminal 10 can be suppressed.

The conductive layer 22 is preferably formed only on the side surfaces 10 a and 10 b of the power supply terminal 10. That may be a conductive layer 22 on the end surface of the power supply terminal 10, but preferable since it is possible that there is no conductive layer 22 on the end face firmly connect the power supply cable or the like to the end of the feed terminal 10. For example, by forming the female screw 10c on the end face and removing the conductive layer 22 in this portion, it is possible to easily fix the power supply cable (not shown) with the male screw (not shown) and firmly fix the power supply cable, This is preferable because there is no risk of loosening during operation.

  The conductive layer 22 is preferably formed on the surface of the power supply terminal 10 via a metal layer different from the conductive layer 22. This is because the metal layer having high adhesion is provided on the power supply terminal 10 and the conductive layer 22 having low resistance is formed thereon, so that the conductive layer 22 having low resistance even when subjected to a thermal cycle is supplied to the power supply terminal 10. This is because it can be formed on the surface of the terminal 10. The metal layer is preferably Ni when the conductive layer 22 is a silver / copper brazing material. This is because Ni interdiffuses in both the power supply terminal 10 and the conductive layer 22 to increase the adhesion strength. Further, from the viewpoint of oxidation resistance of the power supply terminal 10, Ni is preferable as the base layer of the conductive layer 22.

Further, the arithmetic average roughness Ra of the surface on which the conductive layer 22 or the metal layer of the power supply terminal 10 is formed is preferably in the range of 0.1 to 2. This is because, by roughening the surface of the power supply terminal 10, the adhesion of the conductive layer 22 is improved by the anchor effect, and variations in thickness can be suppressed. If the arithmetic average roughness Ra of the surface of the power supply terminal 10 on which the conductive layer 22 or the metal layer is formed is less than 0.1, the anchor effect is small and the thickness variation cannot be suppressed. Furthermore, if the arithmetic average roughness Ra of the surface of the power supply terminal 10 on which the conductive layer 22 or the metal layer is formed exceeds 2, the surface of the power supply terminal 10 has a large unevenness, and the flow of high-frequency current can be biased. The terminal 10 generates heat. Therefore, the arithmetic average roughness Ra of the surface on which the conductive layer 22 or the metal layer of the power supply terminal 10 is formed is preferably in the range of 0.1-2. More preferably, the range of 0.4-1 is good.

  The arithmetic average roughness Ra of the power supply terminal 10 can be obtained as an average value obtained by measuring the surface of the power supply terminal 10 before brazing at three locations with a surface roughness meter.

  Further, as a means for forming the conductive layer 22, a thin film forming means such as a CVD method or a PVD method, a plating method, a method in which a brazing material 18 is applied and baked can be used, and a dense one is preferably used. .

  Examples of the present invention will be described below.

  An experiment was conducted to investigate the heat generation of the power supply terminal when high frequency power was applied to the electrostatic chucking electrode of the wafer support member.

  For the wafer support member used in this experiment, a high purity aluminum nitride powder was mixed with a binder and a solvent to produce a slurry, and a plurality of green sheets were formed by a doctor blade method. Further, a tungsten paste was prepared by mixing aluminum nitride powder and tungsten powder. And the metal paste film | membrane used as the electrode for electrostatic adsorption was printed on the green sheet using the said tungsten paste. And after laminating the green sheet in which each metal paste film was laid and the remaining green sheet and forming a laminate by thermocompression bonding at a pressure of 80 ° C. and 4.9 MPa, it was cut into a disk shape, The disk-shaped laminate was vacuum degreased at a temperature of 400 ° C. and then sintered in a nitrogen atmosphere at 2000 ° C. to obtain a plate-shaped ceramic body having an outer diameter of about 200 mm and a wall thickness of about 12 mm.

  And the mounting surface which mounts a wafer was given to the surface by which the electrode for electrostatic attraction of the plate-shaped ceramic body is embed | buried, and the wafer was mounted.

  In addition, a concave portion penetrating the electrode for electrostatic attraction is formed on the surface of the plate-shaped ceramic body opposite to the wafer mounting surface, and a metallized layer is formed on the inner wall surface of the concave portion. Was inserted and electrically connected to the electrode exposed in the recess, and a wafer support member (sample No. 1) fixed by brazing so that one side of the power supply terminal was exposed from the recess was produced. In this case, no groove was formed in the portion exposed from the concave portion of the power supply terminal except that the conductive layer was formed.

  In addition, in the wafer support member (sample No. 2) of the present invention, a power supply terminal electrically connected to the electrode was attached to the recess of the plate-like ceramic body so that one side was exposed from the recess.

  Then, a groove having a width of 1 mm and a depth of 0.5 mm is formed by cutting on the surface exposed from the recess of the power supply terminal having a diameter of 4 mm and a length of 15 mm, and a linear silver-copper brazing material is wound around the groove. A conductive layer covering the groove was formed by baking at a temperature of 900 ° C. The amount of the linear silver-copper brazing material at this time was the same for both the present product and the conventional product.

  The metal constituting the metallized layer is made of an alloy of silver, copper, and titanium, and the brazing material is made of silver and copper brazing containing copper and silver in a weight ratio of 8: 2, each at a temperature of 900 ° C. And fixed with brazing.

Then, the wafer support member is mounted on the film formation container, the wafer is placed on the placement surface and sucked, a high frequency voltage of 13.56 MHz for generating plasma is applied to the electrostatic suction electrode, and the temperature on the surface of the wafer is measured. Experiments were conducted to measure the distribution. The temperature distribution of the wafer was measured using an optical fiber at nine points on the wafer surface, and the difference between the maximum value and the minimum value was taken as the wafer temperature difference. The thickness of the conductive layer was measured with an ultrasonic flaw detector (HIS3HF). The thickness of the conductive layer of the power supply terminal in this case is that the ultrasonic wave is reflected at the interface between the conductive layer and the power supply terminal other than the conductive layer in the conductive layer. The thickness of the different conductive layer was measured by ultrasonic measurement, and the thickness of the conductive layer was determined. The minimum thickness of the conductive layer was determined as the minimum thickness of the conductive layer among the five measured thicknesses.

  From the measurement results in Table 1, the sample No. When the surface of the power supply terminal outside the range of 1 of the present invention has no groove, the minimum thickness of the conductive layer was as small as 0.8 μm, and the temperature difference of the wafer was as large as 15 ° C. This is because the conductive layer is formed in a state where no groove is formed, so that the conductive layer is not formed uniformly, and a thin portion is formed in the conductive layer, so that the power supply terminal generates heat and the temperature difference of the wafer is large. It is thought that it became.

 On the other hand, sample No. 1 having a groove in the power supply terminal of the product of the present invention. 2 showed that the minimum thickness of the conductive layer was as large as 4.2 μm, the temperature difference of the wafer was as small as 8 ° C., and the heat uniformity was excellent. This is because a conductive layer is formed on the surface of the power supply terminal by forming a conductive layer by winding a linear silver-copper brazing material around the power supply terminal in which the groove is formed, and a thin portion is formed on the conductive layer. It is considered that the temperature difference of the wafer was small because the heat generation of the power supply terminal was suppressed.

 From the above results, one main surface of the plate-like ceramic body 4 is set as a placement surface 4a on which the wafer W is placed, and the electrode 12 is provided inside thereof, and the surface of the plate-like ceramic body 4 other than the placement surface 4a is provided. In the wafer support member 2 having the power supply terminal 10 electrically connected to the electrode 12, it was found that the conductive layer 22 and the groove 20 were provided on the surface of the power supply terminal 10.

  Next, the plate-like ceramic body 4 is produced in the same manner as in Example 1, and the wafer support member 2 in which the amount of the linear silver-copper brazing material to be the conductive layer 22 is varied and the average thickness of the conductive layer 22 is varied. Were prepared.

Then, an experiment for measuring the temperature distribution on the surface of the wafer W with respect to the average thickness of the conductive layer 22 was performed. The method for measuring the temperature distribution of the wafer W and the thickness of the conductive layer 22 was performed in the same manner as in Example 1. In addition, the average thickness of the conductive layer 22 is the average thickness of the conductive layer 22 measured by measuring the thickness of the conductive layer 22 at five points. The results are shown in Table 2.

 From Table 2, sample Nos. In which the average thickness of the conductive layer 22 is in the range of 3 to 100 μm. Nos. 22, 23, and 24 were able to produce very excellent wafer support members having a temperature difference of 6 ° C. or less.

 On the other hand, the sample No. 2 in which the average thickness of the conductive layer 22 is as small as 2 μm. Sample No. 21 has a temperature difference of 8 ° C. for the wafer W. It was worse than 22, 23, 24. This is because the conductive layer 22 is thin, and the low resistance effect due to the conductive layer 22 on the surface of the power supply terminal 10 is small. It is considered that the temperature difference of the wafer W was increased because heat was generated from 22, 23, and 24.

 In addition, Sample No. in which the average thickness of the conductive layer 22 was as thick as 110 μm. 25, since the conductive layer 22 was too thick, part of the conductive layer 22 was peeled off, the resistance of the power supply terminal 10 was increased, and the high-frequency current did not flow smoothly. It is considered that heat was generated from 22, 23, and 24, and the temperature difference of the wafer W became as large as 8 ° C.

  From the above results, it was found that the average thickness of the conductive layer 22 is preferably in the range of 3 to 100 μm.

  Next, the wafer support member 2 was produced in the same manner as in Example 1 by making the average thickness of the conductive layer 22 of the power supply terminal 10 constant and changing the material of the conductive layer 22.

Then, high frequency power of 13.56 MHz and 2 kW is applied between the power supply terminal 10 of the wafer support member 2 and the electrostatic chucking electrode 12, and energization is performed to supply and stop the high frequency power in units of 5 minutes. A cycle test was performed. And the experiment which measures the temperature distribution in the surface of the wafer W after repeating this electricity supply cycle test 10,000 times was done. The method for measuring the temperature distribution of the wafer W was performed in the same manner as in Example 1. The results are shown in Table 3.

  From Table 3, Sample No. whose main component is at least one of gold, silver, copper, and aluminum. 31, 32, 33, 34, and 35, the temperature difference of the wafer W is 6, 5, 5, 6, 5 ° C., and the power supply terminal 10 does not generate heat even after 10,000 times of energization. Thus, the wafer support member 2 could be used stably.

 In contrast, sample no. It can be seen that the chromium of 36 deteriorates the conductive layer 22 after 10,000 cycles, and the temperature difference of the wafer W is 10 ° C. and the heat uniformity is poor.

  Therefore, it can be seen from the above results that the material of the conductive layer 22 is preferably composed mainly of at least one of gold, silver, copper, and aluminum.

 Next, the power supply terminal 10 covered with the conductive layer 22 only and the power supply terminal 10 are plated with Ni, and then the wafer support member 2 coated with the conductive layer 22 and the power supply terminal 10 are plated with copper. After that, the wafer support member 2 coated with the conductive layer 22 was produced. Each conductive layer 22 was formed using a silver-copper brazing material.

Then, high frequency power of 13.56 MHz and 2 kW is applied between the power supply terminal 10 of the wafer support member 2 and the electrostatic chucking electrode 12, and energization is performed to supply and stop the high frequency power in units of 5 minutes. A cycle test was performed. And after repeating this electricity supply cycle test 20,000 times, in order to see the adhesive force of the electroconductive layer 22 and the electric power feeding terminal 10, a cellophane tape was affixed on the electric power feeding terminal, and the test was done whether the electroconductive layer 22 peeled. Further, the energization cycle test was repeated 10,000 times thereafter, a cellophane tape was applied to the power supply terminal, and the test was conducted once again to see if the conductive layer 22 was peeled off. The results are shown in Table 4.

  From the results of Table 4, the sample No. of the power feeding terminal 10 having a metal layer of Ni and copper was obtained. Nos. 42 and 43 were able to produce the wafer support member 2 having a stable adhesion strength without peeling off the conductive layer 22 even after conducting an energization cycle test 20,000 times.

  Further, in the conductive layer 22 peeling test after 10,000 energization cycles, the sample No. of the power supply terminal 10 having a Ni metal layer was used. Only 42 did not peel off the conductive layer 22.

  Therefore, it can be seen from the above results that a metal layer different from the conductive layer is preferably formed at the interface between the conductive layer and the power feeding terminal. It can also be seen that the metal layer is preferably composed mainly of Ni.

(A) is an example of the top view of the wafer support member 2, (b) is sectional drawing of the XX. It is sectional drawing which shows the electric power feeding terminal 10 periphery of the wafer support member 2 of this invention in detail. A state in which the brazing material 18 before the conductive layer 22 is formed is attached to the power supply terminal 10 of the wafer support member 2 of the present invention. It is sectional drawing which shows the conventional wafer support member 32. FIG.

Explanation of symbols

2, 32: Wafer support member 4, 34: Plate-like ceramic body 4a, 34a: Placement surface 4b, 34b: Insulating layer 10, 40: Feed terminal 10a: Groove outer surface 10b: Groove inner surface 10c: Female screw 12 42: electrode, electrode for electrostatic attraction 14: recess 16: recess inner wall surface 18: brazing material layer 18a: layer coated with brazing material 20: groove 22: conductive layer 23: linear brazing material W : Wafer

Claims (7)

The one main surface of the ceramic plate and mounting surface mounting the wafer, the inner wall surfaces of the recess together when the Bei give an electrode therein, forming a recess in the surface of the ceramic plate other than the mounting surface the electrodes and the electrically conductive layer is formed to be connected, high frequency power for generating plasma is connected electrical to through the electrode and the conductive layer to the concave portion is applied to, tungsten, in the wafer support member having one side become more feeding terminal one of molybdenum and as an Fe-Ni-Co alloy is formed by mounting so as to be exposed from the recess, a groove is formed on the surface exposed from the recess portion of the feeding terminal, A wafer support member, characterized in that a conductive layer having a resistance value smaller than that of the power supply terminal, which is connected to the conductive layer formed on the inner wall surface and covers the groove, is formed. The wafer support member according to claim 1, characterized in that the groove and the conductive layer is formed on the feeding terminal is formed only on the side surfaces.   3. The wafer support member according to claim 1, wherein an average film thickness of the conductive layer is in a range of 3 to 100 μm. The above material is gold conductive layer, silver, copper, wafer support member according to Izu Re one of claims 1 to 3, at least any one of aluminum, which is a main component.   5. The wafer support member according to claim 1, wherein the conductive layer is formed on a surface of the power supply terminal via a metal layer different from the conductive layer.   The wafer support member according to claim 5, wherein the metal layer contains Ni as a main component.   The wafer support member according to any one of claims 1 to 6, wherein the arithmetic average roughness Ra of the surface on which the conductive layer or the metal layer of the power supply terminal is formed is 0.1 to 2.

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