JP2002134745A5 - - Google Patents

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Publication number
JP2002134745A5
JP2002134745A5 JP2000326143A JP2000326143A JP2002134745A5 JP 2002134745 A5 JP2002134745 A5 JP 2002134745A5 JP 2000326143 A JP2000326143 A JP 2000326143A JP 2000326143 A JP2000326143 A JP 2000326143A JP 2002134745 A5 JP2002134745 A5 JP 2002134745A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000326143A
Other languages
Japanese (ja)
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JP2002134745A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000326143A priority Critical patent/JP2002134745A/ja
Priority claimed from JP2000326143A external-priority patent/JP2002134745A/ja
Publication of JP2002134745A publication Critical patent/JP2002134745A/ja
Publication of JP2002134745A5 publication Critical patent/JP2002134745A5/ja
Pending legal-status Critical Current

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JP2000326143A 2000-10-25 2000-10-25 半導体装置の製造方法 Pending JP2002134745A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000326143A JP2002134745A (ja) 2000-10-25 2000-10-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000326143A JP2002134745A (ja) 2000-10-25 2000-10-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002134745A JP2002134745A (ja) 2002-05-10
JP2002134745A5 true JP2002134745A5 (enrdf_load_stackoverflow) 2007-02-22

Family

ID=18803383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000326143A Pending JP2002134745A (ja) 2000-10-25 2000-10-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2002134745A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100869340B1 (ko) * 2002-07-19 2008-11-19 주식회사 하이닉스반도체 반도체 장치의 듀얼 게이트 전극 제조방법
JP2004172259A (ja) 2002-11-19 2004-06-17 Oki Electric Ind Co Ltd 半導体素子の製造方法
KR100609942B1 (ko) * 2004-01-09 2006-08-08 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 셀의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864808A (ja) * 1994-08-19 1996-03-08 Toshiba Corp 半導体装置とその製造方法
JP3543504B2 (ja) * 1996-08-06 2004-07-14 ソニー株式会社 半導体装置の製造方法
JPH1098004A (ja) * 1996-09-20 1998-04-14 Hitachi Ltd 半導体装置およびその製造方法
JP3564908B2 (ja) * 1996-12-24 2004-09-15 ソニー株式会社 半導体装置の製造方法
JPH10261792A (ja) * 1997-03-18 1998-09-29 Hitachi Ltd 半導体装置およびその製造方法
JP3191287B2 (ja) * 1998-07-31 2001-07-23 日本電気株式会社 半導体装置およびその製造方法
KR100329769B1 (ko) * 1998-12-22 2002-07-18 박종섭 티타늄폴리사이드게이트전극형성방법
KR100327432B1 (ko) * 1999-02-22 2002-03-13 박종섭 반도체 소자의 금속 배선 형성 방법

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