JP2002134745A5 - - Google Patents
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- JP2002134745A5 JP2002134745A5 JP2000326143A JP2000326143A JP2002134745A5 JP 2002134745 A5 JP2002134745 A5 JP 2002134745A5 JP 2000326143 A JP2000326143 A JP 2000326143A JP 2000326143 A JP2000326143 A JP 2000326143A JP 2002134745 A5 JP2002134745 A5 JP 2002134745A5
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- JP
- Japan
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000326143A JP2002134745A (ja) | 2000-10-25 | 2000-10-25 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000326143A JP2002134745A (ja) | 2000-10-25 | 2000-10-25 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002134745A JP2002134745A (ja) | 2002-05-10 |
JP2002134745A5 true JP2002134745A5 (de) | 2007-02-22 |
Family
ID=18803383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000326143A Pending JP2002134745A (ja) | 2000-10-25 | 2000-10-25 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002134745A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100869340B1 (ko) * | 2002-07-19 | 2008-11-19 | 주식회사 하이닉스반도체 | 반도체 장치의 듀얼 게이트 전극 제조방법 |
JP2004172259A (ja) | 2002-11-19 | 2004-06-17 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
KR100609942B1 (ko) * | 2004-01-09 | 2006-08-08 | 에스티마이크로일렉트로닉스 엔.브이. | 플래쉬 메모리 셀의 제조 방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864808A (ja) * | 1994-08-19 | 1996-03-08 | Toshiba Corp | 半導体装置とその製造方法 |
JP3543504B2 (ja) * | 1996-08-06 | 2004-07-14 | ソニー株式会社 | 半導体装置の製造方法 |
JPH1098004A (ja) * | 1996-09-20 | 1998-04-14 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3564908B2 (ja) * | 1996-12-24 | 2004-09-15 | ソニー株式会社 | 半導体装置の製造方法 |
JPH10261792A (ja) * | 1997-03-18 | 1998-09-29 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3191287B2 (ja) * | 1998-07-31 | 2001-07-23 | 日本電気株式会社 | 半導体装置およびその製造方法 |
KR100329769B1 (ko) * | 1998-12-22 | 2002-07-18 | 박종섭 | 티타늄폴리사이드게이트전극형성방법 |
KR100327432B1 (ko) * | 1999-02-22 | 2002-03-13 | 박종섭 | 반도체 소자의 금속 배선 형성 방법 |
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2000
- 2000-10-25 JP JP2000326143A patent/JP2002134745A/ja active Pending