JP2002134745A5 - - Google Patents

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Publication number
JP2002134745A5
JP2002134745A5 JP2000326143A JP2000326143A JP2002134745A5 JP 2002134745 A5 JP2002134745 A5 JP 2002134745A5 JP 2000326143 A JP2000326143 A JP 2000326143A JP 2000326143 A JP2000326143 A JP 2000326143A JP 2002134745 A5 JP2002134745 A5 JP 2002134745A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000326143A
Other languages
Japanese (ja)
Other versions
JP2002134745A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000326143A priority Critical patent/JP2002134745A/ja
Priority claimed from JP2000326143A external-priority patent/JP2002134745A/ja
Publication of JP2002134745A publication Critical patent/JP2002134745A/ja
Publication of JP2002134745A5 publication Critical patent/JP2002134745A5/ja
Pending legal-status Critical Current

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JP2000326143A 2000-10-25 2000-10-25 半導体装置の製造方法 Pending JP2002134745A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000326143A JP2002134745A (ja) 2000-10-25 2000-10-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000326143A JP2002134745A (ja) 2000-10-25 2000-10-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002134745A JP2002134745A (ja) 2002-05-10
JP2002134745A5 true JP2002134745A5 (cg-RX-API-DMAC10.html) 2007-02-22

Family

ID=18803383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000326143A Pending JP2002134745A (ja) 2000-10-25 2000-10-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2002134745A (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100869340B1 (ko) * 2002-07-19 2008-11-19 주식회사 하이닉스반도체 반도체 장치의 듀얼 게이트 전극 제조방법
JP2004172259A (ja) 2002-11-19 2004-06-17 Oki Electric Ind Co Ltd 半導体素子の製造方法
KR100609942B1 (ko) * 2004-01-09 2006-08-08 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 셀의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864808A (ja) * 1994-08-19 1996-03-08 Toshiba Corp 半導体装置とその製造方法
JP3543504B2 (ja) * 1996-08-06 2004-07-14 ソニー株式会社 半導体装置の製造方法
JPH1098004A (ja) * 1996-09-20 1998-04-14 Hitachi Ltd 半導体装置およびその製造方法
JP3564908B2 (ja) * 1996-12-24 2004-09-15 ソニー株式会社 半導体装置の製造方法
JPH10261792A (ja) * 1997-03-18 1998-09-29 Hitachi Ltd 半導体装置およびその製造方法
JP3191287B2 (ja) * 1998-07-31 2001-07-23 日本電気株式会社 半導体装置およびその製造方法
KR100329769B1 (ko) * 1998-12-22 2002-07-18 박종섭 티타늄폴리사이드게이트전극형성방법
KR100327432B1 (ko) * 1999-02-22 2002-03-13 박종섭 반도체 소자의 금속 배선 형성 방법

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