JP2002107745A - 電気光学装置 - Google Patents
電気光学装置Info
- Publication number
- JP2002107745A JP2002107745A JP2000294326A JP2000294326A JP2002107745A JP 2002107745 A JP2002107745 A JP 2002107745A JP 2000294326 A JP2000294326 A JP 2000294326A JP 2000294326 A JP2000294326 A JP 2000294326A JP 2002107745 A JP2002107745 A JP 2002107745A
- Authority
- JP
- Japan
- Prior art keywords
- electro
- optical device
- film
- scanning line
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 239000003990 capacitor Substances 0.000 claims abstract description 42
- 239000011229 interlayer Substances 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims description 234
- 239000010410 layer Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 45
- 239000010409 thin film Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 25
- 238000003860 storage Methods 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000012935 Averaging Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 82
- 230000007547 defect Effects 0.000 abstract description 23
- 230000002950 deficient Effects 0.000 abstract description 5
- 238000003475 lamination Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 78
- 230000000630 rising effect Effects 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 7
- 230000008961 swelling Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000382 optic material Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- -1 is sealed Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000294326A JP2002107745A (ja) | 2000-09-27 | 2000-09-27 | 電気光学装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000294326A JP2002107745A (ja) | 2000-09-27 | 2000-09-27 | 電気光学装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002107745A true JP2002107745A (ja) | 2002-04-10 |
| JP2002107745A5 JP2002107745A5 (enrdf_load_stackoverflow) | 2007-02-01 |
Family
ID=18776957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000294326A Pending JP2002107745A (ja) | 2000-09-27 | 2000-09-27 | 電気光学装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002107745A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7079198B2 (en) | 2002-11-26 | 2006-07-18 | Seiko Epson Corporation | Wiring structure, method of manufacturing the same, electro-optical device, and electronic device |
| JP2007248506A (ja) * | 2006-03-13 | 2007-09-27 | Toshiba Matsushita Display Technology Co Ltd | 基板装置および液晶表示装置 |
| JP2009217099A (ja) * | 2008-03-12 | 2009-09-24 | Seiko Epson Corp | 液晶装置 |
| KR100938743B1 (ko) * | 2003-04-30 | 2010-01-26 | 사천홍시현시기건유한공사 | 유기 전계 발광 소자 |
| CN1605921B (zh) * | 2003-08-13 | 2011-07-27 | 三星电子株式会社 | 液晶显示器及用于其的薄膜晶体管衬底 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0720497A (ja) * | 1993-07-05 | 1995-01-24 | Sony Corp | アクティブマトリクス液晶表示装置 |
| JPH0720492A (ja) * | 1993-06-23 | 1995-01-24 | Toshiba Corp | 液晶表示装置及びその製造方法 |
| JPH09105926A (ja) * | 1995-10-11 | 1997-04-22 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
| JPH11271805A (ja) * | 1998-03-23 | 1999-10-08 | Toshiba Corp | 液晶表示装置 |
| JP2000002889A (ja) * | 1998-06-16 | 2000-01-07 | Mitsubishi Electric Corp | 液晶表示装置 |
| WO2000039634A1 (fr) * | 1998-12-28 | 2000-07-06 | Seiko Epson Corporation | Dispositif electro-optique, procede de fabrication correspondant et dispositif electronique |
| JP2000206571A (ja) * | 1998-12-31 | 2000-07-28 | Samsung Electronics Co Ltd | 液晶表示装置用薄膜トランジスタ基板及びその製造方法 |
| JP2000221526A (ja) * | 1999-02-04 | 2000-08-11 | Seiko Epson Corp | 液晶装置および電子機器 |
-
2000
- 2000-09-27 JP JP2000294326A patent/JP2002107745A/ja active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0720492A (ja) * | 1993-06-23 | 1995-01-24 | Toshiba Corp | 液晶表示装置及びその製造方法 |
| JPH0720497A (ja) * | 1993-07-05 | 1995-01-24 | Sony Corp | アクティブマトリクス液晶表示装置 |
| JPH09105926A (ja) * | 1995-10-11 | 1997-04-22 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
| JPH11271805A (ja) * | 1998-03-23 | 1999-10-08 | Toshiba Corp | 液晶表示装置 |
| JP2000002889A (ja) * | 1998-06-16 | 2000-01-07 | Mitsubishi Electric Corp | 液晶表示装置 |
| WO2000039634A1 (fr) * | 1998-12-28 | 2000-07-06 | Seiko Epson Corporation | Dispositif electro-optique, procede de fabrication correspondant et dispositif electronique |
| JP2000206571A (ja) * | 1998-12-31 | 2000-07-28 | Samsung Electronics Co Ltd | 液晶表示装置用薄膜トランジスタ基板及びその製造方法 |
| JP2000221526A (ja) * | 1999-02-04 | 2000-08-11 | Seiko Epson Corp | 液晶装置および電子機器 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7079198B2 (en) | 2002-11-26 | 2006-07-18 | Seiko Epson Corporation | Wiring structure, method of manufacturing the same, electro-optical device, and electronic device |
| KR100938743B1 (ko) * | 2003-04-30 | 2010-01-26 | 사천홍시현시기건유한공사 | 유기 전계 발광 소자 |
| CN1605921B (zh) * | 2003-08-13 | 2011-07-27 | 三星电子株式会社 | 液晶显示器及用于其的薄膜晶体管衬底 |
| JP2007248506A (ja) * | 2006-03-13 | 2007-09-27 | Toshiba Matsushita Display Technology Co Ltd | 基板装置および液晶表示装置 |
| JP2009217099A (ja) * | 2008-03-12 | 2009-09-24 | Seiko Epson Corp | 液晶装置 |
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| A521 | Written amendment |
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