JP2002107745A - Electrooptical device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce display defects caused by orientation defects or the like of liquid crystal to display a bright picture of high grade with respect to an electrooptical device like a liquid crystal device. SOLUTION: In the electrooptical device, a pixel electrode (9a), a TFT (30) connected to the electrode (9a), a data line (6a) connected to the TFT, and a capacitance line (300) which is formed on the data line with an inter-layer insulating film (42) between them by lamination and includes a main line part extended in a direction crossing the data line when viewed in a plane are provided on a TFT array substrate (10). The foundation surface of the pixel electrode rises into trapezoids in an area along scanning lines corresponding to existence of scanning lines and the capacitance line. Pixel electrodes adjacent to each other in the data line direction are formed up to the upper faces of areas rising into trapezoids.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor (hereinafter referred to as TFT (Thin Film Transistor) as appropriate).
Belongs to the technical field of an electro-optical device such as a liquid crystal device of an active matrix drive system provided with each pixel for pixel switching.

[0002]

2. Description of the Related Art In an electro-optical device of this type, various electronic elements such as pixel switching TFTs and storage capacitors of a pair of substrates and various wirings such as scanning lines, data lines, and capacitance lines connected thereto are provided. One formed substrate (hereinafter referred to as TF
Pixel electrodes are arranged in a matrix on a T array substrate), and each pixel electrode is driven by a TFT. An electro-optical material such as liquid crystal sandwiched between each pixel electrode and a counter electrode provided on the other substrate (hereinafter, appropriately referred to as a counter substrate) is applied to a substrate surface applied between the two electrodes. It is common to be driven by a vertical electric field (that is, the arrangement state is changed).

Here, in order to prevent deterioration of the liquid crystal or the like due to application of a DC voltage and to prevent flicker in a displayed image, the voltage applied to the liquid crystal or the like is controlled by applying a voltage along a scanning line for each field or frame of an image signal. A scanning line inversion driving method for inverting in units of groups (that is, in units of horizontal lines), or applying a voltage to be applied to a liquid crystal or the like in units of pixels along data lines in each field or each frame (that is, in lines that are vertically aligned) A data line inversion drive method of inverting the data line (in units) and a dot inversion drive method of inverting the voltage applied to the liquid crystal or the like in each pixel (that is, arranged vertically and horizontally in units of dots) for each field or each frame have been developed.

However, when the scanning line inversion driving method is used, the pixel electrodes adjacent to each other in the direction of the data line (that is, vertically) have opposite potential polarities at each point in time. A horizontal electric field is generated between them. Then, in the electro-optical device which is assumed to be driven by a vertical electric field perpendicular to the substrate surface, the lateral electric field causes a malfunction of the electro-optical material such as a poor alignment of a liquid crystal. Further, when the data line inversion driving method is used, the pixel electrodes adjacent to each other in the direction of the scanning line (that is, horizontally) have opposite potential polarities at each point in time. An electric field is generated. Therefore, also in this case, operation failure of the electro-optical material such as poor alignment of the liquid crystal is caused. Further, when the dot inversion driving method is used, in the direction of the data line and the scanning line (that is, vertically and horizontally),
Adjacent pixel electrodes have opposite potential polarities applied at each point in time, so that a lateral electric field is generated between these two edges. Therefore, also in this case, operation failure of the electro-optical material such as poor alignment of the liquid crystal is caused.

[0005] In such a region where a horizontal electric field is generated, the orientation state of the electro-optical material cannot be controlled by the vertical electric field.
Display defects such as light leakage (hereinafter, “primary” due to a lateral electric field)
Display failure or operation failure).

For this reason, a scanning line inversion driving method in which the inversion driving control is relatively easy and the area where the primary display failure occurs due to the lateral electric field is relatively small is conventionally considered to be advantageous. Has been adopted. In addition, a temporary operation failure caused by a lateral electric field generated by this method is provided by providing a light-shielding film on the substrate so as to prevent it from actually being seen.

[0007]

However, according to the study of the present inventors, an alignment film or the like provided on a pixel electrode for controlling an alignment state of an electro-optical material such as an alignment state of a liquid crystal is disclosed. When the rubbing process is performed, the inclination of the liquid crystal or the like due to the lateral electric field (that is, the inclination angle and the inclination azimuth) and the rubbing near the edge of the pixel electrode depend on the relationship between the direction of the lateral electric field and the direction of the rubbing process. It has been found that there is a case where the inclination tendency of the liquid crystal or the like due to the processing substantially matches, and a case where the inclination tendency substantially reverses. In particular, among the edges of the pair of pixel electrodes in the region where the horizontal electric field is generated, on the side where the inclination tendency of the liquid crystal and the like due to the horizontal electric field and the inclination tendency of the liquid crystal and the like due to the rubbing treatment are substantially opposite downstream of the rubbing process. In the vicinity of the edge of the pixel electrode, somewhere between the liquid crystal portion where the alignment state is dominantly defined by the alignment film and the liquid crystal portion where the alignment state is dominantly defined by the lateral electric field, A discontinuous surface is generated in the liquid crystal or the like. On the discontinuous surface generated on the downstream side of the rubbing process, there is a problem that display defects such as light leakage (hereinafter referred to as “secondary” display defects or operation defects due to a lateral electric field) are caused.

In particular, the lateral electric field itself has a peak at the center of the gap between adjacent pixel electrodes having opposite potential polarities, whereas the discontinuous surface has a rubbing treatment from the center of the gap between the pixel electrodes. The peak occurs at any position on the pixel electrode that is separated downstream of the pixel electrode. Therefore, if the gap between the pixel electrodes is covered with the light shielding film as in the related art, there is a problem that the secondary display failure area due to the lateral electric field caused by the discontinuous surface cannot be covered.

Conversely, if it is attempted to cover the secondary display failure area caused by the horizontal electric field due to the discontinuous surface in addition to the primary display failure area caused by the lateral electric field, the non-open area of each pixel Increase with respect to the aperture region, and the aperture ratio of each pixel decreases. As a result, there is a problem that it is fundamentally difficult to meet the basic demand in the technical field of making the display image brighter.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and a display defect caused by an operation defect of an electro-optical material such as a liquid crystal alignment defect is reduced, and an electric device capable of displaying a bright and high-quality image is provided. It is an object to provide an optical device.

[0011]

In order to solve the above-mentioned problems, an electro-optical device according to the present invention comprises an electro-optical material sandwiched between a pair of first and second substrates.
A plurality of pixel electrodes arranged in a matrix; a thin film transistor connected to the pixel electrode; a scanning line connected to the thin film transistor and extending in a first direction; A conductive film extending in the first direction, a counter electrode facing the pixel electrode on the second substrate, and a base surface of the pixel electrode on the first substrate includes the scanning line and the conductive line. In the region along the scanning line corresponding to the presence of the film, the first
The cross section perpendicular to the direction is substantially trapezoidal, and the pixel electrodes adjacent to each other in the second direction intersecting with the first direction are protruded into the substantially trapezoidal shape from a region of the base surface that is not substantially trapezoidal. It is formed up to the upper surface of the region.

According to the electro-optical device of the present invention, the underlying surface of the pixel electrode on the first substrate rises in a substantially trapezoidal shape along a scanning line in a continuous or divided band-like region. The pixel electrodes adjacent to each other in the second direction are formed up to the upper surface of the substantially trapezoidally raised region. That is, the edges of the pixel electrodes adjacent to each other in the second direction are respectively located on the upper surface of the substantially trapezoidal region. Therefore, in the vicinity of the edge of the pixel electrode adjacent in the second direction, the vertical electric field can be locally increased by reducing the distance between the pixel electrode and the counter electrode according to the height of the substantially trapezoid. Therefore, even when driving is performed by the scanning line inversion driving method, it is possible to reduce the adverse effect due to the lateral electric field generated between the edges of the pixel electrodes adjacent to each other in the second direction. Therefore,
Primary and secondary operation failures due to the above-described lateral electric field can be basically reduced.

In addition, the inclination of the electro-optical material caused by the rubbing process and the inclination of the electro-optical material caused by the transverse electric field substantially coincide with each other on the substantially trapezoidal oblique side on the side that is rubbed against the alignment film on the pixel electrode. Therefore, there is no discontinuous surface between the electro-optical materials having different inclinations as described above.
That is, the secondary operation failure due to the lateral electric field on the discontinuous surface as described above does not occur.

[0014] In this case, particularly, on the oblique side of the trapezoid on the side to be rubbed, the inclination tendency of the electro-optic material due to the rubbing treatment is opposite to the inclination tendency of the electro-optic material due to the transverse electric field. Discontinuities in the electro-optic material occur. That is, the secondary operation failure due to the lateral electric field on the discontinuous surface as described above occurs to some extent. However, since the end of the pixel electrode on the down slope side is disposed on the substantially trapezoidal upper surface, the discontinuous surface is located in a substantially trapezoidal band-shaped planar region. That is, it is possible to overlap or approach a plane region where a primary operation failure due to the lateral electric field in the region where the lateral electric field is generated and a secondary operation failure due to the lateral electric field in the discontinuous surface occur. In other words, the portion of the electro-optical material where the malfunction occurs can be accommodated in a band-shaped planar region that is substantially trapezoidal along the scanning line.

Therefore, if a band-like planar region which is substantially trapezoidally raised along a scanning line is hidden by a light-shielding film, display defects such as light leakage due to primary and secondary operation defects due to a lateral electric field are prevented. Can be prevented. Compared to the conventional case where these operation failures are generated at distant places, and the display failures due to these are required to be concealed with a very wide light-shielding film in order to prevent the display failures, the present invention relates to an electro-optical material. It is sufficient to hide the defective operation part with a light-shielding film in a narrow width, and the opening area of each pixel can be widened.

As a result, display defects due to operation defects of the electro-optical material such as defective alignment of liquid crystal are reduced.
Bright and high-quality images can be displayed.

In one embodiment of the present invention, the base surface is
The scanning line and the conductive film are formed on the surface of the interlayer insulating film laminated on and around the conductive film.

According to this aspect, with the interlayer insulating film, the pixel electrode can be interlayer-insulated from the scanning line and the conductive film which are stacked therebelow and located above. Then, the interlayer insulating film is raised substantially in a trapezoidal shape along the scanning line according to the existence of the scanning line and the conductive film stacked thereunder.
Here, since the interlayer insulating film is also stacked around the scanning line and the conductive film, the substantially trapezoidal oblique sides each begin to gradually incline at the lower end. For this reason, rubbing can be performed favorably near the lower end of the oblique side, and the occurrence of a portion where the inclination tendency of the electro-optical material changes steeply or discontinuously near the lower end of the oblique side can be prevented. As a result, display defects due to operation failure of the electro-optical material can be finally reduced.

In this aspect, in particular, the film thickness of the interlayer insulating film may be configured to be larger than the film thickness of an upper one of the scanning lines and the conductive film.

According to this structure, as compared with the case where the interlayer insulating film is thinner than the upper one of the scanning lines and the conductive film, the slope starts to be more gentle at the lower end of the substantially trapezoidal oblique side ( That is, the angle formed by the substantially trapezoidal oblique side with the base near the lower end becomes smaller.

In another aspect of the present invention, the conductive film is stacked on the scanning line via another interlayer insulating film.

According to this structure, since the conductive film can be interlayer-insulated from the scanning line, various functions different from those of the scanning line can be given to the conductive film.

In another aspect of the present invention, the conductive film includes an upper light-shielding film laminated on the scanning line and covering at least a channel region of the thin film transistor from above.

According to this aspect, in addition to the function of raising the base surface in a substantially trapezoidal shape, the conductive film also functions as an upper light-shielding film that covers at least a channel region of the thin film transistor from above. Therefore, the upper light-shielding film can effectively prevent a change in the characteristics of the thin film transistor due to a light leak current caused by light entering the channel region of the thin film transistor. Therefore, it is possible to realize a configuration in which the thin film transistor can be shielded from light and the base surface is raised substantially in a trapezoidal shape while simplifying the laminated structure and the manufacturing process.

In this aspect, the upper light-shielding film may be configured to be wider in the cross section than another conductive film including the scanning line stacked thereunder.

According to this structure, the upper light-shielding film can cover another conductive film including the scanning line from above, and can surely cover the channel region of the thin film transistor. At the same time, the width of the upper light shielding film on the upper side is wider,
Above this, the start and end of the slope of the base surface that rises in a substantially trapezoidal shape can be made smooth.

In another aspect of the present invention, the conductive film includes a capacitor line including a fixed-potential-side capacitor electrode of a storage capacitor added to the pixel electrode.

According to this aspect, the conductive film functions not only as a function of raising the base surface into a substantially trapezoidal shape but also as a fixed potential side capacitor electrode of the storage capacitor. Therefore, it is possible to provide a storage capacitor to the pixel electrode and to realize a configuration in which the underlying surface is raised substantially in a trapezoidal shape while simplifying the laminated structure and the manufacturing process.

In another aspect of the present invention, the conductive film includes an intermediate conductive layer including a pixel potential side capacitor electrode of a storage capacitor added to the pixel electrode.

According to this aspect, the conductive film functions not only as a function of raising the underlying surface into a substantially trapezoidal shape, but also as a pixel potential side capacitor electrode of the storage capacitor. Therefore, it is possible to provide a storage capacitor to the pixel electrode and to realize a configuration in which the underlying surface is raised substantially in a trapezoidal shape while simplifying the laminated structure and the manufacturing process.

In another aspect of the present invention, the conductive film includes an intermediate conductive layer that relays the pixel electrode and the thin film transistor.

According to this aspect, the conductive film functions not only to raise the underlying surface into a substantially trapezoidal shape but also to function as an intermediate conductive layer for relay connection between the pixel electrode and the thin film transistor. Therefore, even if the interlayer distance between the pixel electrode and the thin film transistor is relatively long due to the interposition of various conductive films and insulating films, it is technically difficult to connect the two via one contact hole. The connection can be made using two (or more) contact holes having a relatively small diameter while avoiding the problem. Therefore, a configuration in which the thin film transistor and the pixel electrode can be relay-connected and the base surface is raised substantially in a trapezoidal shape can be realized while simplifying the laminated structure and the manufacturing process.

In another aspect of the present invention, the conductive film includes a lower light-shielding film laminated below the thin film transistor and covering at least the channel region from below.

According to this aspect, the conductive film functions not only to raise the underlying surface into a substantially trapezoidal shape but also to function as a lower light-shielding film that covers at least a channel region of the thin film transistor from below. Therefore, the lower light-shielding film can effectively prevent a change in the characteristics of the thin film transistor due to a light leak current caused by light entering the channel region of the thin film transistor. Particularly, the reflected light on the back surface of the first substrate when strong incident light is used as in the case of a projector, or emitted from another electro-optical device in the case of a multi-plate type projector device using a plurality of electro-optical devices as light valves. In addition, it is possible to effectively shield the return light such as the light penetrating through the combining optical system. Therefore, it is possible to realize a configuration in which the thin film transistor can be shielded from light and the base surface is raised substantially in a trapezoidal shape while simplifying the laminated structure and the manufacturing process.

In another aspect of the present invention, the inclination angles of both oblique sides of the substantially trapezoid are the same.

According to this structure, the pixel electrodes adjacent to each other in the second direction can be symmetrically arranged on both sides of the substantially trapezoid, and the peak of the lateral electric field can be positioned on the upper surface of the substantially trapezoid. Therefore, the region where such a lateral electric field is generated is
The light-shielding film that covers the substantially trapezoidally raised area can be reliably covered.

In another aspect of the present invention, the inclination angles of the two oblique sides of the substantially trapezoid are different from each other, and the inclination angle of the oblique side on the side where the rubbing treatment on the alignment film on the pixel electrode is reduced is increased. Smaller than the inclination angle of the hypotenuse.

According to this aspect, the discontinuous surface between the electro-optical materials having different inclinations as described above does not occur on the upward slope where the rubbing treatment is rubbed, even if the inclination angle is large. On the other hand, on a descending slope where the rubbing treatment is rubbed down, if the inclination angle is large, the inclination tendency is reversed as described above, so that a discontinuous surface occurs between the electro-optical materials having different inclination tendencies as described above. In addition, the discontinuous surface becomes more prominent as the inclination angle of the downward slope is larger. However, in this embodiment, since the inclination angle of the descending oblique side is smaller than the inclination angle of the ascending oblique side, by making the inclination angle gentler on the side that is more sensitive to the display failure, it is possible to reduce the overall display failure. In particular, in order to make the inclination on the side where the inclination angle is effective is more gentle, it is necessary or desired to raise the shape of each pixel into a substantially trapezoidal shape within a limited width with the fine pitch of each pixel. This is very advantageous in light of the current situation.

In another aspect of the present invention, the average inclination angle obtained by averaging the irregularities of the substantially trapezoidal oblique side on the side where the rubbing process is performed on the alignment film on the pixel electrode is 80 degrees or less.

According to this aspect, on the up slope where the rubbing process is rubbed, the inclination angle obtained by averaging the irregularities of the substantially trapezoidal hypotenuse is smaller than 80 degrees, so that the rubbing process for rubbing is preferably performed. This makes it possible to favorably control the inclination of the electro-optical material on the upward slope.

In this aspect, the angle formed between the substantially trapezoidal oblique side and the bottom of the substantially trapezoidal shape may be 90 degrees or less.

With this configuration, the angle between the substantially trapezoidal oblique side and the substantially trapezoidal bottom is 90 degrees or less on the up slope where the rubbing process is rubbed, so that the rubbing process is rubbed. Can be performed, and the inclination of the electro-optical material on the upward slope can be controlled.

In another aspect of the present invention, the scanning line and the conductive film have different widths in the cross section.

According to this embodiment, the width of the cross section of the scanning line is different from the width of the scanning line that raises the base surface in a substantially trapezoidal shape (that is, the scanning line is wider or the conductive film is wider). Therefore, the inclination of the substantially trapezoidal oblique side can be made gentle according to the difference in width between the two. That is, if the widths of the two sides are made equal, a hypotenuse that rises or falls at once is formed by the total film thickness of both, and the inclination angle of the hypotenuse must be large. Conversely, if the width between the two is made different as in this embodiment, an oblique side that rises or falls over a longer horizontal distance over the total film thickness of the two is configured, so that the inclination angle of the oblique side can be easily reduced.

According to another aspect of the present invention, the pixel electrode comprises a transparent electrode or a reflective electrode.

According to this aspect, a transmissive or transflective electro-optical device can be constructed using the pixel electrodes composed of transparent electrodes. Alternatively, a reflection-type electro-optical device can be constructed using a pixel electrode formed of a reflection electrode.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0048]

Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, the electro-optical device according to the invention is applied to a liquid crystal device.

(First Embodiment) First, a basic configuration of an electro-optical device according to a first embodiment of the present invention will be described with reference to FIG.
3 will be described with reference to FIG. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of the electro-optical device. FIG. 2 shows a TF on which data lines, scanning lines, pixel electrodes, etc. are formed.
FIG. 4 is a plan view of a plurality of pixel groups adjacent to each other on a T array substrate. FIG. 3 is a sectional view taken along line AA ′ of FIG. In FIG. 3, the scale of each layer and each member is different so that each layer and each member have a size that can be recognized in the drawing.

In FIG. 1, a plurality of pixels formed in a matrix and constituting an image display area of the electro-optical device according to the present embodiment have a pixel electrode 9a and a TFT 30 for controlling the switching of the pixel electrode 9a. Are formed, and the data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. good. The scanning line 3 is connected to the gate of the TFT 30.
a is electrically connected to the scanning line 3a at predetermined timings in a pulsed manner with the scanning signals G1, G2,.
Are applied in this order in a line-sequential manner.
The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30 as a switching element for a certain period, the data line 6 is turned off.
The image signals S1, S2,..., Sn supplied from a are written at a predetermined timing. The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a are connected to a counter electrode (described later) formed on a counter substrate (described later). For a fixed period of time. The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. In the normally white mode, the transmittance for the incident light decreases according to the voltage applied in each pixel unit. In the normally black mode, the light enters according to the voltage applied in each pixel unit. Light transmittance is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode.

In FIG. 2, a plurality of transparent pixel electrodes 9 are arranged in a matrix on the TFT array substrate of the electro-optical device.
a (the outline is indicated by a dotted line portion 9a '), and the data line 6a and the scanning line 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a, respectively.

Further, the scanning line 3a is arranged so as to face the channel region 1a 'indicated by a hatched region in the semiconductor layer 1a, which rises to the right in the figure, and the scanning line 3a functions as a gate electrode (particularly, In the present embodiment, the scanning line 3a
Is formed wide in a portion to be the gate electrode). In this manner, at the intersections of the scanning lines 3a and the data lines 6a, the scanning lines 3a and
A pixel switching TFT 30 is provided in which a is opposed to each other as a gate electrode.

As shown in FIGS. 2 and 3, in this embodiment, particularly, the capacitance line 300 as an example of the built-in light shielding film includes a first film 72 made of a conductive polysilicon film or the like and a high melting point metal. It has a multilayer structure in which a second film 73 made of a metal silicide film or the like is laminated. The second film 73 functions as a fixed-potential-side capacitor electrode of the capacitor line 300 or the storage capacitor 70, and also has a function of detecting T
It has a function as a light shielding layer for shielding the FT 30 from light. Further, the first film 72 functions not only as a fixed potential side capacitor electrode of the capacitor line 300 or the storage capacitor 70 but also as a light absorption layer disposed between the second film 73 as a light shielding layer and the TFT 30. Have. On the other hand, the dielectric film 7
The relay layer 71a opposed to the intermediary layer 5 has a storage capacitor 7
In addition to the function as the pixel potential side capacitor electrode of 0, it has a function as a light absorbing layer disposed between the second film 73 as the light shielding layer and the TFT 30. Further, the pixel electrode 9a and the TFT 3
It has a function of relay connection with the zero high-concentration drain region 1e.

In the present embodiment, the storage capacitor 70 is a TFT
A relay layer 71a as a pixel potential side capacitance electrode connected to the high-concentration drain region 1e (and the pixel electrode 9a)
And a part of the capacitance line 300 as the fixed potential side capacitance electrode is formed by being opposed to each other with the dielectric film 75 interposed therebetween.

When viewed in plan, the capacitance line 300 is the scanning line 3a.
2, a portion overlapping the TFT 30 from the main line portion projects vertically in FIG. 2. Then, the TFT 3 on the TFT array substrate 10 is located in a region where the data line 6a extending in the vertical direction in FIG. 2 and the capacitance line 300 extending in the horizontal direction in FIG.
0 is arranged. The data lines 6a and the capacitor lines 300 which intersect each other form a lattice-shaped light-shielding layer in plan view, and define an opening area of each pixel.

On the other hand, T on the TFT array substrate 10
Below the FT 30, a lower light-shielding film 11a is provided in a lattice shape.

The second film 7 constituting one example of these light shielding layers
3 and the lower light-shielding film 11a are each at least one of high melting point metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), and Pb (lead). Including one metal simple substance, alloy,
It is made of a metal silicide, a polysilicide, or a material obtained by laminating them. The capacitance line 300 as an example of the built-in light-shielding film including the second film 73 has a multilayer structure, and the first film 72 is a conductive polysilicon film. It is not necessary to form 73 from a conductive material, but if not only the first film 72 but also the second film 73 is formed from a conductive film, the resistance of the capacitance line 300 can be further reduced.

In FIG. 3, a dielectric film 7 arranged between a relay layer 71a as a capacitor electrode and a capacitor line 300 is provided.
5 is a relatively thin HT having a thickness of, for example, about 5 to 200 nm.
It is composed of a silicon oxide film such as an O film, an LTO film, or a silicon nitride film. From the viewpoint of increasing the storage capacitance 70, as long as the reliability of the film is sufficiently obtained,
The thinner the dielectric film 75, the better.

The first film 72 not only functioning as a light absorbing layer but also forming part of the capacitance line 300 has a thickness of, for example, 15 μm.
It is made of a polysilicon film of about 0 nm. In addition, the second film 73 not only functioning as a light shielding layer but also forming another part of the capacitance line 300 is made of, for example, a tungsten silicide film having a thickness of about 150 nm. Thus, the dielectric film 75
The first film 72 arranged on the side in contact with the dielectric film 75 is made of a polysilicon film, and the relay layer 71a in contact with the dielectric film 75 is made of a polysilicon film, so that the deterioration of the dielectric film 75 can be prevented. For example, if a configuration is adopted in which a metal silicide film is brought into contact with the dielectric film 75, a metal such as a heavy metal enters the dielectric film 75, and the performance of the dielectric film 75 is deteriorated. Further, when such a capacitor line 300 is formed on the dielectric film 75, if the capacitor line 300 is formed continuously without performing a photoresist process after the formation of the dielectric film 75, the Since the quality can be improved, the dielectric film 75 can be formed thin, and the storage capacitance 70 can be finally increased.

As shown in FIGS. 2 and 3, the data line 6a
Is connected to a relay layer 71b for relay connection via a contact hole 81. The relay layer 71b is further connected via a contact hole 82 to the high-concentration source region 1d in the semiconductor layer 1a made of, for example, a polysilicon film. Is electrically connected to

In the present embodiment, the contact holes 81 and 82 are formed at different plane positions, but may be formed at the same plane position. The relay layer 71b is formed simultaneously from the same film as the relay layer 71a having various functions described above.

The capacitance line 300 extends from the image display area where the pixel electrode 9a is arranged to the periphery thereof, is electrically connected to a constant potential source, and has a fixed potential. As such a constant potential source, a scanning line driving circuit (described later) for supplying a scanning signal for driving the TFT 30 to the scanning line 3a.
Or a constant potential source such as a positive power supply or a negative power supply supplied to a data line driving circuit (described later) for controlling a sampling circuit for supplying an image signal to the data line 6a, or supplied to a counter electrode 21 of a counter substrate 20. Constant potential. Furthermore,
The potential fluctuation of the lower light-shielding film 11a
In order to avoid having an adverse effect on 0, like the capacitor line 300, it is preferable to extend from the image display area to the periphery thereof and connect to a constant potential source.

The pixel electrode 9a is electrically connected to the high-concentration drain region 1e of the semiconductor layer 1a via the contact holes 83 and 85 by relaying the relay layer 71a. If the relay layers 71a and 71b are used as the relay layers in this manner, the interlayer distance becomes, for example, 2000 nm.
Even if it is long enough, both can be connected well with two or more series contact holes of relatively small diameter while avoiding the technical difficulty of connecting them with one contact hole,
It is possible to increase the pixel aperture ratio, and it is also useful for preventing penetration of etching when opening a contact hole.

In FIG. 2 and FIG. 3, the electro-optical device is
The device includes a transparent TFT array substrate 10 and a transparent opposing substrate 20 disposed opposite to the TFT array substrate 10. The TFT array substrate 10 is made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate.

The TFT array substrate 10 has a groove 10cv in the form of a stripe extending along the data line when viewed in a plan view (shown by a hatched area at the lower right in FIG. 2). The data line 6a, the TFT 30 formed along the data line 6a, the relay layer 71b, and the like are buried in the trench 10cv. As a result, in the band-shaped planar region extending vertically along the data line 6a, the step between the region where the wiring, the element, and the like is present and the region where the wiring, the element, and the like are not present is reduced. Image defects such as liquid crystal alignment defects can be reduced. On the other hand, the scanning line 3a
In the strip-shaped planar region extending laterally along the scanning line 3a, there are a plurality of conductive films such as the light shielding film 11a, the capacitor line 300, and the relay layer 71a stacked above or below the scanning line 3a. The underlying surface of the pixel electrode 9a is raised substantially in a trapezoidal shape. Such a configuration and the operation and effect thereof will be described later in detail with reference to FIGS.

As shown in FIG. 3, the TFT array substrate 10
Is provided with a pixel electrode 9a, and above it,
Alignment film 16 that has been subjected to a predetermined alignment treatment such as a rubbing treatment
Is provided. The pixel electrode 9a is made of, for example, ITO (In
It is composed of a transparent conductive film such as a dium tin oxide film. The alignment film 16 is made of, for example, an organic film such as a polyimide film.

On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode 21. I have. The counter electrode 21 is made of, for example, a transparent conductive film such as an ITO film. The alignment film 22 is made of an organic film such as a polyimide film.

The opposing substrate 20 may be provided with a lattice-shaped or stripe-shaped light-shielding film. By adopting such a configuration, as described above, the capacitance line 30 constituting the light shielding layer
0 and the light-shielding film on the opposing substrate 20 together with the data lines 6a, the incident light from the opposing substrate 20 side is
a ′, the lightly doped source region 1b and the lightly doped drain region 1
c can be more reliably prevented from entering. Further, such a light-shielding film on the counter substrate 20 has a function of preventing a temperature rise of the electro-optical device by forming at least a surface irradiated with incident light with a highly reflective film. Note that the light-shielding film on the counter substrate 20 is preferably formed so as to be located inside the light-shielding layer including the capacitor lines 300 and the data lines 6a in plan view. As a result, the light-shielding film on the counter substrate 20 can provide such effects of light-shielding and temperature rise prevention without lowering the aperture ratio of each pixel.

The space between the TFT array substrate 10 and the opposing substrate 20 having the pixel electrode 9a and the opposing electrode 21 arranged in such a manner as to face each other is provided in a space surrounded by a sealing material described later. Liquid crystal, which is an example of an electro-optical material, is sealed, and a liquid crystal layer 50 is formed. The liquid crystal layer 50 holds the alignment film 1 in a state where no electric field is applied from the pixel electrode 9a.
A predetermined orientation state is taken by 6 and 22. Liquid crystal layer 50
Is composed of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed. The sealing material is used for bonding the TFT array substrate 10 and the opposing substrate 20 around them.
For example, it is an adhesive made of a photo-curing resin or a thermosetting resin, and a gap material such as glass fiber or glass beads for mixing the two substrates at a predetermined distance is mixed.

Further, under the pixel switching TFT 30, a base insulating film 12 is provided. Base insulating film 1
2 has a function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, and is formed on the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 can be roughened during polishing or stains remaining after cleaning. T for pixel switching
It has a function of preventing deterioration of the characteristics of the FT 30.

In FIG. 3, the pixel switching TFT
Reference numeral 30 denotes an LDD (Lightly Doped Drain) structure, and includes a scanning line 3a and a channel region 1 of a semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a.
a ', an insulating thin film 2 including a gate insulating film for insulating the scanning line 3a from the semiconductor layer 1a, a low-concentration source region 1b and a low-concentration drain region 1c of the semiconductor layer 1a, a high-concentration source region 1d of the semiconductor layer 1a, and a high-concentration source region. It has a concentration drain region 1e.

On the scanning line 3a, a high concentration source region 1d
A first interlayer insulating film 41 is formed in which a contact hole 82 leading to the contact hole 83 and a contact hole 83 leading to the high concentration drain region 1e are opened.

The relay layers 71a and 71b and the capacitor line 300 are formed on the first interlayer insulating film 41, and a contact hole 81 and a contact hole 85 respectively leading to the relay layers 71a and 71b are formed thereon. An apertured second interlayer insulating film 42 is formed.

In this embodiment, the first interlayer insulating film 41 is used.
By sintering at 1000 ° C., the ions implanted into the polysilicon film forming the semiconductor layer 1a and the scanning line 3a may be activated. On the other hand, by not performing such sintering on the second interlayer insulating film 42, stress generated near the interface of the capacitance line 300 may be reduced.

The data lines 6a are formed on the second interlayer insulating film 42, and the third interlayer insulating film 4 on which a contact hole 85 leading to the relay layer 71a is formed.
3 are formed. The pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 43 configured as described above.

According to the present embodiment configured as described above, the channel region 1 of the TFT 30 is arranged from the counter substrate 20 side.
When the incident light attempts to enter a ′ and its vicinity, the data line 6a and the capacitance line 300 (particularly, the second film 73) as an example of the built-in light-shielding film are shielded. On the other hand, when return light attempts to enter the channel region 1a ′ of the TFT 30 and its vicinity from the TFT array substrate 10 side, the light is shielded by the lower light-shielding film 11a (especially by a multiple-plate type color projector such as a projector). When one electro-optical device is combined via a prism or the like to form one optical system, the return light composed of the projected light portion that penetrates the prism or the like from another electro-optical device is strong, so it is effective. is there.).
Then, oblique return light is applied to the inner surface of the data line 6a made of an Al film having a high reflectivity and the second film 73 made of a high melting point metal film having a relatively high reflectivity (that is, the surface facing the TFT 30). The internal reflection light, multiple reflection light, and the like generated by the incident light are reflected by the first film 72 and the relay layer 71 as the light absorbing layer.
Absorbed and removed by a. As a result, the characteristics of the TFT 30 hardly deteriorate due to light leakage, and the electro-optical device can have extremely high light resistance.

In the embodiment described above, the storage capacity 70
Although the configuration in which the capacitance line 300 including the fixed potential side electrode is used as the built-in light-shielding film is adopted, the pixel potential side electrode of the storage capacitor 70 may be formed as the built-in light-shielding film, or the pixel electrode 9a It is also possible to configure a relay layer for relay connection between the TFT and the TFT 30 as a built-in light shielding film. In any case, the pixel potential side capacitor electrode or the relay layer may be formed from a conductive light shielding film such as a high melting point metal film. Also,
Both the first film 72 and the second film 73 may be formed of polysilicon to form a capacitance line having the function of a light absorbing layer.

Next, referring to FIG. 4 to FIG.
The configuration in which the underlying surface of the pixel electrode 9a is raised substantially in a trapezoidal shape along the line a, and the operation and effect thereof will be described. FIG. 4 is a sectional view taken along line BB ′ of FIG. FIG.
FIG. 3 is a schematic plan view of a pixel electrode showing a voltage polarity and a region C1 where a lateral electric field is generated in each pixel electrode 9a in the scanning line inversion driving method used in the embodiment. FIG.
In order to make each layer or member large enough to be recognizable in the drawings, the scale of each layer or member is varied.

As shown in FIG. 4, the TFT array substrate 10
The underlying surface of the pixel electrode 9a is formed with the scanning line 3a, the light-shielding film 11a as a conductive film, the relay layer 71a, and the capacitor line 3a.
Corresponding to 00 and the presence of the light-shielding film 11a, the cross section perpendicular to the scanning line 3a is raised substantially in a trapezoidal shape, and a bank-shaped raised portion 401 extending along the scanning line 3a is formed.
The pixel electrodes 9a adjacent to each other in the direction of the data line 6a
Are formed up to a substantially trapezoidal upper surface 401 </ b> T of the raised portion 401.

Referring now to FIG. 5, the relationship between the voltage polarity of the pixel electrodes 9a adjacent to each other and the region where the lateral electric field is generated in the scanning line inversion driving method employed in this embodiment will be described.

That is, as shown in FIG. 5A, during the period of displaying the image signal of the nth (where n is a natural number) field or frame, the liquid crystal indicated by + or-for each pixel electrode 9a. The polarity of the drive voltage is not inverted, and the pixel electrodes 9a are driven with the same polarity for each row. Thereafter, as shown in FIG. 5B, when displaying the image signal of the (n + 1) th field or one frame, the voltage polarity of the liquid crystal driving voltage in each pixel electrode 9a is inverted, and the (n + 1) th field or one frame of the one frame is displayed. During the period of displaying the image signal, the polarity of the liquid crystal drive voltage indicated by + or-is not inverted for each pixel electrode 9a, and the pixel electrodes 9a are driven with the same polarity for each row. Then, the state shown in FIGS. 5A and 5B is repeated at a cycle of one field or one frame, and the driving by the scanning line inversion driving method in the present embodiment is performed. As a result, according to the present embodiment, image display with reduced crosstalk and flicker can be performed while avoiding deterioration of the liquid crystal due to the application of the DC voltage. According to the scanning line inversion driving method, compared with the data line inversion driving method,
This is advantageous in that there is almost no vertical crosstalk, and is advantageous in that the area in which a horizontal electric field is generated is fundamentally smaller than in the dot inversion driving method.

As can be seen from FIGS. 5A and 5B, in the scanning line inversion driving method, the horizontal electric field generation region C1 is always between the pixel electrodes 9a adjacent in the vertical direction (Y direction). It is near the gap.

Referring again to FIG. 4, when the driving is performed by the scanning line inversion driving method in the present embodiment, the height of the upper surface 401T of the rising portion 401 in the horizontal electric field generation region C1 along the scanning line 3a as described above. The vertical electric field is locally strengthened according to h. Therefore, the adverse effect of the horizontal electric field in the horizontal electric field generation region C1 can be basically reduced (that is, by increasing the vertical electric field relatively to the horizontal electric field in the horizontal electric field generation region C1, the adverse effect of the horizontal electric field can be reduced). Can be reduced).

Next, when the rubbing process is performed in the direction indicated by the arrow DR in FIG. 4, the upward slope of the rising portion 401 corresponding to the substantially trapezoidal oblique side on the side to be rubbed against the alignment film 16. 401U and the descending slope 401D of the raised portion 401 corresponding to the substantially trapezoidal oblique side on the side to be rubbed down,
The alignment state of the liquid crystal molecules 50a will be discussed with reference to FIGS. Here, in FIGS. 6 to 10, the liquid crystal molecules 50 in the case where the rubbing process is performed from left to right in the diagram as in FIG.
The alignment state of “a” is schematically shown by the direction of each bar indicating each liquid crystal molecule 50a in a cross section corresponding to the BB ′ cross section shown in FIG. 4, and each horizontal direction is shown in a graph above these. The degree of light leakage (transmittance) at a position is shown.

In FIG. 6, as shown in the present embodiment, the bulging portion 4
11 shows an alignment state of the liquid crystal molecules 50a in a case where an end of the pixel electrode 9a is arranged on the upper surface 401T of the liquid crystal molecule 50a.

In FIG. 7, the rising slope 40 of the rising portion 401 is shown.
1U and relatively rising portion 4 on down slope 401D
11 shows the alignment state of the liquid crystal molecules 50a when the ends of the pixel electrodes 9a are arranged at positions near the upper surface 401T of the liquid crystal molecules 50a, respectively.

In FIG. 8, the rising slope 40 of the rising portion 401 is shown.
1U and relatively rising portion 4 on down slope 401D
11 shows the alignment state of the liquid crystal molecules 50a when the ends of the pixel electrodes 9a are arranged at positions near the bottom of the pixel electrode 9a, respectively.

FIG. 9 shows an alignment state of the liquid crystal molecules 50a in a case where the raised portion 401 is not provided.

FIG. 10 shows the alignment state of the liquid crystal molecules 50a when the end of the pixel electrode 9a is arranged below the raised portion 401.

As shown in FIGS. 6 to 8, the upward slope 401U and the pixel electrode 9a located on the upstream side in the rubbing direction.
In the vicinity of the end, the inclination tendency of the liquid crystal molecules 50a due to the rubbing process and the inclination tendency of the liquid crystal molecules due to the transverse electric field are almost the same (that is, both tend to incline to the right in the drawing). Therefore, the liquid crystal molecules 50a having different inclination tendencies
There is no discontinuity between them. On the other hand, the down slope 401D and the pixel electrode 9 located on the downstream side in the rubbing direction
Near the end of a, the inclination tendency of the liquid crystal molecules 50a due to the rubbing process is opposite to the inclination tendency of the liquid crystal molecules due to the transverse electric field (that is, the latter tends to incline the liquid crystal molecules to the left, and the former is to the right. (See FIG. 6), the position P2 (see FIG. 7), and the position P2 (see FIG. 7).
3 (see FIG. 8).

As shown in FIG. 9, when there is no raised portion 401, the liquid crystal molecules 50 formed by the rubbing process are located near the end of the pixel electrode 9a located on the upstream side in the rubbing direction.
The inclination tendency of a and the inclination tendency of the liquid crystal molecules 50a due to the lateral electric field are substantially the same. Therefore, there is no discontinuous surface between the liquid crystal molecules 50a having different inclinations.
On the other hand, near the end of the pixel electrode 9a located on the downstream side in the rubbing direction, the inclination tendency of the liquid crystal molecules 50a due to the rubbing treatment and the inclination tendency of the liquid crystal molecules 50a due to the transverse electric field are as follows.
Therefore, a discontinuous plane between the liquid crystal molecules 50a having different inclinations is generated at the position P4.

Further, as shown in FIG.
If the edge of the pixel electrode is located below even if there is, the up slope 401U located on the upstream side in the rubbing direction
In the vicinity, the inclination tendency of the liquid crystal molecules 50a due to the rubbing process and the inclination tendency of the liquid crystal molecules 50a due to the lateral electric field are substantially the same. Therefore, there is no discontinuous surface between the liquid crystal molecules 50a having different inclinations. On the other hand, in the vicinity of the downward slope 401D located on the downstream side in the rubbing direction, the inclination tendency of the liquid crystal molecules 50a due to the rubbing treatment,
Since the inclination tendency of the liquid crystal molecules 50a due to the horizontal electric field is opposite, a discontinuous surface between the liquid crystal molecules 50a having different inclination tendencies is formed at the position P5.

As shown in FIGS. 6 to 10, since the alignment state of the liquid crystal molecules 50a cannot be controlled by the vertical electric field in the region where the horizontal electric field is generated, light leakage is caused as a primary display defect or operation defect due to the horizontal electric field. Have been. The peaks of the light leakage are shown by the characteristic curve C1 (see FIG. 6), the characteristic curve C2 (see FIG. 7), and the characteristic curve C3 (see FIG. 8).
Characteristic curve C4 (see FIG. 9) and characteristic curve C5.
As shown in FIG. 10 (see FIG. 10), they are located at the center of the gap between adjacent pixel electrodes 9a. On the contrary,
Position P1 on the downstream side of the rubbing process (see FIG. 6),
Position P2 (see FIG. 7), Position P3 (see FIG. 8), Position P
4 (see FIG. 9) and the discontinuous planes generated at the position P5 (see FIG. 10) respectively cause light leakage as a secondary display failure or operation failure due to the lateral electric field.

Here, in this embodiment, as shown in FIG. 6 in particular, a raised portion 401 is provided on the base surface of the pixel electrode 9a, and the edge of the pixel electrode 9a is
On the upper surface 401T. Therefore, in the vicinity of the edge of the pixel electrode 9a, the pixel electrode 9a and the counter electrode 21
The vertical electric field can be locally strengthened by reducing the distance from the upper surface 401T (see FIG. 3) in accordance with the height h of the upper surface 401T.
In FIG. 6, the peak of the special curve C1 is kept low. That is, the primary and secondary operation failures due to the above-described lateral electric field can be basically reduced.

Further, although a discontinuous surface is generated at the position P1, the end of the pixel electrode 9a on the side of the downward slope 401D is disposed on the upper surface 401U, and therefore, the position P1 of the discontinuous surface is at the downward slope 401D. In the plane area of That is, as can be seen from the characteristic curve C1 shown in FIG. 6, the primary operation failure due to the lateral electric field in the region where the lateral electric field is generated and the secondary operation failure due to the lateral electric field at the discontinuous surface (in addition to the liquid crystal). It is possible to overlap the planar region where the liquid crystal molecules 50a are poorly aligned due to unevenness in the thickness of the layer 50).

Therefore, if the raised portion 401 is hidden by the capacitance line 300, the light-shielding film 11a, etc. in a plan view, display defects such as light leakage due to primary and secondary operation failures due to the lateral electric field will not occur. It can be prevented before it happens.

On the other hand, as shown in FIGS. 7 and 8, if the end of the pixel electrode 9a on the side of the downward slope 401D is not arranged on the upper surface 401U, the characteristic curves C2 (see FIG. 7) and C3 (see FIG. As can be seen from FIG. 1), not only the primary operation failure due to the lateral electric field in the region where the lateral electric field is generated increases, but also the region where the primary operation failure due to the lateral electric field occurs in the region where the lateral electric field occurs, the discontinuous surface The position P2 where the secondary operation failure occurs due to the horizontal electric field in FIG.
(See FIG. 8) and the position P3 (see FIG. 8). For this reason, the secondary operation failure due to the lateral electric field on the discontinuous surface has a peak alone, and it is not possible to simply hide the raised portion 401 with the capacitance line 300, the light shielding film 11a, or the like in plan view. It is impossible to prevent the occurrence of light leakage due to the secondary operation failure due to the lateral electric field in the continuous surface.

Further, as shown in FIGS. 9 and 10, when the raised portion 401 is not formed or the pixel electrode 9a is not formed on the raised portion 401, the edge of the pixel electrode 9a is formed. In the vicinity, the distance between the pixel electrode 9a and the counter electrode 21 (see FIG. 3) cannot be reduced in accordance with the height of the raised portion 401, so that the vertical electric field cannot be locally increased. For this reason, as shown by the special curves C4 and C5 in FIGS. 9 and 10, the primary and secondary operation failures due to the lateral electric field become extremely large.
Further, a position P4 (see FIG. 9) and a position P5 (see FIG. 10) where the secondary operation failure due to the lateral electric field occurs on the discontinuous surface.
) Greatly deviates from the gap between the pixel electrodes 9a. Therefore, if the gap between the pixel electrodes 9a (in the case of FIG. 9) or the raised portion 401 (in the case of FIG. 10) is simply hidden by the capacitance line 300, the light-shielding film 11a, or the like when viewed in a plan view, the horizontal surface in the discontinuous surface is not obtained. It is impossible to prevent the occurrence of light leakage due to the secondary operation failure due to the electric field.

As described above with reference to FIGS. 6 to 10, according to the present embodiment having the configuration shown in FIG. 4, display defects due to defective liquid crystal alignment are reduced. Specifically, a bright and high-quality image can be displayed.

Further, in the present embodiment, in order to excite the raised portion 401, the capacitance line 300 also serving as the upper light-shielding film is used.
Since the conductive film including the relay layer 71a and the light-shielding film 11a and the scanning line 3a are used, and a dedicated film for forming the raised portion 401 is not formed, the laminated structure and the manufacturing process can be simplified, which is very difficult in practice. It is advantageous.

In this embodiment, as shown in FIG. 4, the capacitance line 300 also serving as the upper light-shielding film is formed wider than other conductive films including the scanning line 3a stacked thereunder. I have. For this reason, the TFT 3
0 can be reliably covered from above. At the same time, the start and end of the slope of the rising slope 401U and the falling slope 401D of the rising part 401 can be made smoother by the width of the upper capacitance line 300.

Further, in the present embodiment, particularly, the raised portion 401
Have the same inclination angle. For this reason, the rising portion 40
The edge portions of the pixel electrodes 9a adjacent to each other on the upper portion 1 are raised portions 401.
Can be arranged symmetrically on both sides, and the generation peak of the lateral electric field can be located on the upper surface 401T of the raised portion 401. Therefore, the region where the horizontal electric field is generated is defined by
Can be surely covered by the light-shielding film covering.

(Second Embodiment) Next, referring to FIG.
A second embodiment of the electro-optical device according to the invention will be described. Note that the second embodiment relates to a raised portion that is raised substantially in a trapezoidal shape along a scanning line in the first embodiment, and thus only the configuration of the raised portion will be described. Other configurations are the same as those in the first embodiment. Here, FIGS. 11A to 11C are cross-sectional views each showing a raised portion of the second embodiment in a cross section corresponding to the BB ′ cross section shown in FIG.

In the second embodiment, the inclination of the raised portion is controlled by changing the width of a plurality of conductive films.

That is, as shown in FIGS. 11 (a) to 11 (c), each of the raised portions 402 to 404 has one of scanning lines and a plurality of conductive films 501 and 502 stacked thereon. And an interlayer insulating film 503 is laminated thereon.

In particular, the rising portion 4 shown in FIG.
As in 02, the widths of the conductive films 501 and 502 may be the same.

However, the protruding portion 403 shown in FIG.
Alternatively, it is preferable that the widths of the conductive films 501 and 502 be different from each other, as in a raised portion 404 shown in FIG. With this configuration, the slope of the oblique side of the raised portion 404 or 405 can be made gentle according to the difference in the width between the conductive films 501 and 502. Therefore, rubbing can be favorably performed near the lower end of the oblique side, and the occurrence of a portion where the inclination of the liquid crystal changes steeply or discontinuously near the lower end of the oblique side can be prevented.

In this embodiment, if an interlayer insulating film is laminated between the conductive films 501 and 502, they can be used as different wirings, electrodes, and the like.

(Third Embodiment) Next, referring to FIG.
A third embodiment of the electro-optical device according to the invention will be described. Note that the third embodiment relates to a raised portion that is raised substantially in a trapezoidal shape along a scanning line in the first embodiment, and thus only the configuration of the raised portion will be described. Other configurations are the same as those in the first embodiment. FIGS. 12A to 12D are cross-sectional views each showing a swelling portion of the third embodiment in a cross section corresponding to the BB ′ cross section shown in FIG.

In the third embodiment, the inclination of the raised portion is controlled by changing the shape or film thickness of the interlayer insulating film stacked above the scanning line.

That is, as shown in FIGS. 12 (a) to 12 (d), the raised portions 405 to 408 are formed by a conductive film laminated on a scanning line or a conductive film 603 formed of a scanning line. An interlayer insulating film 602 is formed over the film 601 and above the conductive film 603.

In particular, the bulging portion 4 shown in FIG.
As in 05, the interlayer insulating film 602 may be interrupted around the raised portion 405.

However, the protruding portion 406 shown in FIG.
It is preferable that the interlayer insulating film 602 is formed so as to extend around the raised portion 406 as shown in FIG. With this configuration, the bulging portion 4 is formed in accordance with the thickness of the interlayer insulating film 602.
The inclination of the hypotenuse of 06 can be made gentle. Therefore, rubbing can be favorably performed near the lower end of the oblique side, and the occurrence of a portion where the inclination of the liquid crystal changes steeply or discontinuously near the lower end of the oblique side can be prevented.

Further, the bulging portion 407 shown in FIG.
As described above, the interlayer insulating film 602 may be thinner than the thickness of the conductive film 603.

However, the protruding portion 408 shown in FIG.
As described above, the interlayer insulating film 602 is preferably thicker than the conductive film 603. With such a configuration, the slope of the oblique side of the raised portion 406 can be made gentle according to the thickness of the interlayer insulating film 602.

(Fourth Embodiment) Next, referring to FIG.
A fourth embodiment of the electro-optical device according to the invention will be described. Note that the fourth embodiment relates to a raised portion that is raised substantially in a trapezoidal shape along a scanning line in the first embodiment, and thus only the configuration of the raised portion will be described. Other configurations are the same as those in the first embodiment. Here, FIG. 13 shows the B-
It is sectional drawing which shows the swelling part of 4th Embodiment in the cross section corresponding to B 'cross section.

In the fourth embodiment, the inclination angle of the slope of the raised portion is made different between the rubbing side and the rubbing side.

That is, as shown in FIG.
Reference numeral 9 denotes a plurality of conductive films 701 and 7 each having a scanning line.
02 is laminated, and an interlayer insulating film 703 is laminated thereon.

In particular, the conductive films 701 and 702 having different sizes are asymmetrically stacked so that the inclination angle θ2 of the down slope is smaller than the inclination angle θ1 of the up slope. On an upward slope, a discontinuous surface does not occur even if the inclination angle θ1 is increased in this way. On the other hand,
On a descending slope where the tilt angle is sensitive to display defects, it is possible to reduce the tilt angle θ2 in this way, and to reduce display defects that occur as a whole. Furthermore, in order to accommodate the raised portion 409 within the limited width in the area on the substrate, it is effective to increase the inclination angle θ1 that is not sensitive to display defects and narrow the raised portion 409. It is a target.

In this embodiment, if an interlayer insulating film is stacked between the conductive films 701 and 702, both can be used as different wirings, electrodes, and the like.

(Fifth Embodiment) Next, referring to FIG.
A fifth embodiment of the electro-optical device according to the invention will be described. Note that the fifth embodiment relates to a raised portion that is raised substantially in a trapezoidal shape along a scanning line in the first embodiment, and thus only the configuration of the raised portion will be described. Other configurations are the same as those in the first embodiment. Here, FIG. 14 shows the B-
It is sectional drawing which expands and shows the rising part in 5th Embodiment in the cross section corresponding to B 'cross section.

In the fifth embodiment, the shape of the rising portion is defined by the average inclination angle and the rising angle on the upward slope.

That is, as shown in FIG.
0 is an average inclination angle θa obtained by averaging unevenness of a curved up slope on the side where the rubbing treatment is to be rubbed is 8;
It is set to 0 degrees or less. According to this structure, the rubbing can be satisfactorily performed on the up slope where the rubbing is rubbed, and the alignment state of the liquid crystal on the up slope can be well controlled.

At this time, it is preferable that the rising angle θb on the slope of the raised portion 410 is 90 degrees or less (that is, the tapered portion does not have a reverse taper). According to this structure, the rubbing process can be performed more favorably on an upward slope where the rubbing process is rubbed.

In each of the embodiments described above, by stacking a large number of conductive layers as shown in FIG. 3, the data lines 6a on the ground under the pixel electrodes 9a (ie, the surface of the third interlayer insulating film 43) are formed. A step is generated in the region along
This is mitigated by digging a stripe-shaped groove 10cv along the data line in the FT array substrate 10, but instead or additionally, the base insulating film 12, the first interlayer insulating film 41, and the second interlayer insulating film 42, a groove is dug in the third interlayer insulating film 43,
The flattening process may be performed by embedding the wiring such as the data line 6a or the TFT 30 or the like.

In the embodiment described above, the pixel switching TFT 30 preferably has the LDD structure as shown in FIG. 3, but does not implant impurities into the low-concentration source region 1b and the low-concentration drain region 1c. An impurity may be implanted at a high concentration using an offset structure, or using a gate electrode composed of a part of the scanning line 3a as a mask.
A self-aligned TFT that forms high-concentration source and drain regions in a self-aligned manner may be used. In the present embodiment, the gate switching TFT 30 has a single gate structure in which only one gate electrode is disposed between the high-concentration source region 1d and the high-concentration drain region 1e, but two or more gate electrodes are provided between them. It may be arranged. In this way, the TF is more than dual gate or triple gate.
With T, light leakage current at the junction between the channel and the source and drain regions can be prevented, and the off-state current can be reduced.

Further, in the embodiment described above, the pixel electrode 9a is formed of a transparent electrode. However, the pixel electrode may be formed of a reflective electrode to form a reflective electro-optical device. Also in this case, defective alignment of the liquid crystal can be reduced, and a bright and high-quality image display can be realized by the reflective electro-optical device.

(Overall Configuration of Electro-Optical Device) FIGS. 15 and 16 show the overall configuration of the electro-optical device configured as described above.
This will be described with reference to FIG. FIG. 15 shows the TFT array substrate 10 together with the components formed thereon and the counter substrate 2.
FIG. 16 is a plan view seen from the side of FIG.
It is H 'sectional drawing.

In FIG. 15, on the TFT array substrate 10, a sealing material 52 is provided along the edge thereof, and in parallel with the inside of the sealing material 52, a light shielding as a frame defining the periphery of the image display area 10a is provided. A film 53 is provided. In a region outside the sealing material 52, a data line driving circuit 101 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10. A scanning line driving circuit 1 for driving a scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing.
04 are provided along two sides adjacent to this one side. If the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. In addition, the data line driving circuit 10
1 may be arranged on both sides along the side of the image display area 10a. Further, on one remaining side of the TFT array substrate 10, the scanning line driving circuits 10 provided on both sides of the image display area 10a are provided.
A plurality of wirings 105 are provided to connect the four wirings. In at least one of the corners of the counter substrate 20, a conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20 is provided. Then, as shown in FIG. 16, the opposing substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 5 is fixed to the TFT array substrate 10 by the sealing material 52.

Note that, on the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit for applying an image signal to a plurality of data lines 6a at a predetermined timing, and a plurality of Data line 6a
A precharge circuit for supplying a precharge signal of a predetermined voltage level prior to the image signal, an inspection circuit for inspecting the quality, defects, and the like of the electro-optical device during manufacturing or shipping. Good.

In the electro-optical device described above with reference to FIGS. 1 to 16, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, TAB (Tape Automated Bonding) The driving LSI mounted on the substrate may be electrically and mechanically connected via an anisotropic conductive film provided on the periphery of the TFT array substrate 10. Also, the side of the opposite substrate 20 on which the projected light is incident and the TFT array substrate 10
For example, the TN mode,
VA (Vertically Aligned) mode, PDLC (Polymer
Operation modes such as (Dispersed Liquid Crystal) mode,
A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to the normally white mode / normally black mode.

Since the above-described electro-optical device is applied to a projector, three electro-optical devices are used as RGB light valves, and each light valve is provided with a dichroic mirror for RGB color separation. The light of each color decomposed by the light is respectively incident as projection light. Therefore, in each embodiment, the opposing substrate 20 is not provided with a color filter. However, an RGB color filter may be formed on the counter substrate 20 in a predetermined region facing the pixel electrode 9a together with the protective film.
In this way, the electro-optical device in each embodiment can be applied to a direct-view or reflective color electro-optical device other than the projector. Further, a micro lens may be formed on the counter substrate 20 so as to correspond to one pixel. Alternatively, it is also possible to form a color filter layer with a color resist or the like under the pixel electrode 9a facing the RGB on the TFT array substrate 10. If you do this,
By improving the efficiency of condensing incident light, a bright electro-optical device can be realized. Furthermore, a dichroic filter that produces RGB colors using light interference may be formed by depositing a number of interference layers having different refractive indexes on the counter substrate 20. According to the counter substrate with the dichroic filter, a brighter color electro-optical device can be realized.

The present invention is not limited to the above-described embodiments, but can be appropriately modified without departing from the spirit and spirit of the invention which can be read from the claims and the entire specification. Such an electro-optical device is also included in the technical scope of the present invention.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit such as various elements and wiring provided in a plurality of pixels in a matrix forming an image display area in an electro-optical device manufactured by an embodiment of a manufacturing method of the present invention.

FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device of FIG.

FIG. 3 is a sectional view taken along line A-A 'of FIG.

FIG. 4 is a sectional view taken along line B-B 'of FIG.

FIG. 5 is a schematic plan view of a pixel electrode showing a voltage polarity and a region where a lateral electric field is generated in each electrode in the 1H inversion driving method used in the embodiment.

FIG. 6 shows an alignment state of liquid crystal molecules in the present embodiment.
FIG. 5 is an explanatory diagram schematically showing, in a cross section corresponding to the BB ′ cross section shown in FIG. 4, the degree of light leakage (transmittance) at each horizontal position and the direction of each rod indicating each liquid crystal molecule.

FIG. 7 shows an alignment state of liquid crystal molecules in one comparative example.
FIG. 5 is an explanatory diagram schematically showing, in a cross section corresponding to the BB ′ cross section shown in FIG. 4, the degree of light leakage (transmittance) at each horizontal position and the direction of each rod indicating each liquid crystal molecule.

FIG. 8 shows an alignment state of liquid crystal molecules in another comparative example.
FIG. 5 is an explanatory diagram schematically showing, in a cross section corresponding to the BB ′ cross section shown in FIG. 4, the degree of light leakage (transmittance) at each horizontal position and the direction of each rod indicating each liquid crystal molecule.

FIG. 9 shows an alignment state of liquid crystal molecules in another comparative example.
FIG. 5 is an explanatory diagram schematically showing, in a cross section corresponding to the BB ′ cross section shown in FIG. 4, the degree of light leakage (transmittance) at each horizontal position and the direction of each rod indicating each liquid crystal molecule.

FIG. 10 shows the alignment state of the liquid crystal molecules in another comparative example, along with the degree of light leakage (transmittance) at each horizontal position in a cross section corresponding to the BB ′ cross section shown in FIG. It is explanatory drawing which shows typically in the direction of each shown bar | burr.

FIG. 11 is a cross-sectional view illustrating a swelling portion of the second embodiment in a cross section corresponding to the BB ′ cross section illustrated in FIG. 4;

FIG. 12 is a cross-sectional view showing a swelling portion of the third embodiment in a cross section corresponding to the BB ′ cross section shown in FIG. 4;

FIG. 13 is a cross-sectional view showing a swelling portion of the fourth embodiment in a cross section corresponding to the BB ′ cross section shown in FIG. 4;

FIG. 14 is an enlarged cross-sectional view showing a swelling portion of the fifth embodiment in a cross section corresponding to the BB ′ cross section shown in FIG. 4;

FIG. 15 is a plan view of the TFT array substrate in the electro-optical device manufactured by the embodiment of the manufacturing method of the present invention, together with the components formed thereon, viewed from the counter substrate side.

FIG. 16 is a sectional view taken along line H-H ′ of FIG.

[Explanation of symbols]

 1a Semiconductor layer 1a 'Channel region 1b Low-concentration source region 1c Low-concentration drain region 1d High-concentration source region 1e High-concentration drain region 2 Insulating thin film 3a Scanning line 6a Data line 9a Pixel electrode 10 ... TFT array substrate 10cv Groove 11a Lower light-shielding film 12 Base insulating film 16 Alignment film 20 Counter substrate 21 Counter electrode 22 Alignment film 30 TFT 50 Liquid crystal layer 70 Storage capacitor 71a Relay layer 71b ... relay layer 72 ... first film of capacitance line 73 ... second film of capacitance line 75 ... dielectric film 81, 82, 83, 85 ... contact hole 300 ... capacitance line 401 ... raised part 401U ... raised part Slope 401D: Downhill slope of the rising section 401T: Top face of the rising section

Continued on the front page F-term (reference) 2H090 HA04 HD14 JA03 JC03 LA04 LA05 MB01 2H092 JA25 JB23 JB24 JB32 JB33 JB54 JB56 JB66 NA04 PA02 5C094 AA03 AA16 AA48 BA03 BA43 CA19 DA13 DB01 DB04 EA04 EA10 EB15 FB03 FA04

Claims (16)

[Claims] An electro-optical material is sandwiched between a pair of first and second substrates, and a plurality of pixel electrodes arranged in a matrix on the first substrate and connected to the pixel electrodes. A thin film transistor; a scanning line connected to the thin film transistor and extending in a first direction;
A conductive film extending in a direction, a counter electrode facing the pixel electrode on the second substrate, and a base surface of the pixel electrode on the first substrate includes the scanning line and the conductive line. Corresponding to the presence of the film, in a region along the scanning line, a cross section perpendicular to the first direction is raised substantially in a trapezoidal shape, and the pixel electrodes adjacent to each other in a second direction intersecting the first direction are the An electro-optical device, wherein the electro-optical device is formed from a region on the base surface that does not rise in the substantially trapezoidal shape to an upper surface of the region that rises in the substantially trapezoidal shape. 2. The electro-optical device according to claim 1, wherein the underlayer surface is formed of a surface of an interlayer insulating film laminated on and around the scanning lines and the conductive film. 3. The electro-optical device according to claim 2, wherein a thickness of the interlayer insulating film is larger than a thickness of an upper one of the scanning line and the conductive film. 4. The electro-optical device according to claim 1, wherein the conductive film is stacked on the scanning line via another interlayer insulating film. . 5. The conductive film according to claim 1, wherein the conductive film includes an upper light-shielding film laminated on the scanning line and covering at least a channel region of the thin film transistor from above. Electro-optical device. 6. The electro-optical device according to claim 5, wherein the upper light-shielding film is wider in the cross section than another conductive film including the scanning line stacked thereunder. 7. The electric device according to claim 1, wherein the conductive film includes a capacitor line including a fixed-potential-side capacitor electrode of a storage capacitor added to the pixel electrode. Optical device. 8. The method according to claim 1, wherein the conductive film includes an intermediate conductive layer including a capacitor electrode on a pixel potential side of a storage capacitor added to the pixel electrode. Electro-optical device. 9. The electro-optical device according to claim 1, wherein the conductive film includes an intermediate conductive layer that relays the pixel electrode and the thin film transistor. 10. The method according to claim 1, wherein the conductive film includes a lower light-shielding film laminated below the thin film transistor and covering at least the channel region from below. An electro-optical device according to claim 1. 11. The electro-optical device according to claim 1, wherein the inclination angles of both oblique sides of the substantially trapezoid are equal to each other. 12. The oblique sides of the oblique sides of the substantially trapezoid are different from each other, and the oblique sides of the oblique sides on which the rubbing process on the alignment film on the pixel electrodes is rubbed are inclined. The electro-optical device according to claim 1, wherein the electro-optical device is smaller than the electro-optical device. 13. An average inclination angle obtained by averaging irregularities of the substantially trapezoidal oblique side on a side where the rubbing process on the alignment film on the pixel electrode is rubbed is 80 degrees or less. 13. The electro-optical device according to any one of 1 to 12. 14. The electro-optical device according to claim 13, wherein the angle between the oblique side of the substantially trapezoid and the base of the substantially trapezoid is 90 degrees or less. 15. The electro-optical device according to claim 1, wherein the scanning line and the conductive film have different widths in the cross section. 16. The electro-optical device according to claim 1, wherein the pixel electrode comprises a transparent electrode or a reflective electrode.