JP2002107763A - Electrooptical device, substrate for this device, and projection display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve characteristics of light resistance to display a picture of high quality level in an electrochemical device like a liquid crystal device. SOLUTION: In the electrochemical device, a pixel electrode (9a), a TFT (30) connected to this electrode, light shielding layer (73 and 6a) which cover at least the channel area of this TFT, and light absorption layers (72 and 71a) which are arranged between these light shielding layers and the TFT and essentially consist of materials which form the channel area are provided on a TFT array substrate (10). The occurrence of inward reflection or multiple reflection on inner surfaces turning toward the TFT of light shielding layers is suppressed by light absorption layers.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of an electro-optical device of an active matrix drive system, and particularly to a thin film transistor for pixel switching (Thin Film Tran).
(hereinafter, appropriately referred to as a TFT) in a laminated structure on a substrate.

[0002]

2. Description of the Related Art In an electro-optical device of a TFT active matrix drive type, when incident light is applied to a channel region of a pixel switching TFT provided in each pixel, a current is generated by excitation by light, and the characteristics of the TFT are reduced. Change. In particular, in the case of an electro-optical device for a light valve of a projector, since the intensity of incident light is high, it is important to shield the TFT channel region and its peripheral region from incident light. Therefore, conventionally, the channel region and its peripheral region are shielded from light by a light-shielding film that defines an opening region of each pixel provided on the opposite substrate, or by a data line that passes over the TFT and is made of a metal film such as Al. It is configured to be. Japanese Patent Application Laid-Open No. 9-33944 discloses a-Si (amorphous silicon) having a large refractive index.
There is disclosed a technique for reducing light incident on a channel region by using a light-shielding film formed from a thin film. Further, a light-shielding film made of, for example, a refractory metal may be provided on the TFT array substrate at a position facing the pixel switching TFT (that is, below the TFT). If a light-shielding film is also provided below the TFT as described above, the back surface reflection from the TFT array substrate side or another electro-optical device when a plurality of electro-optical devices are combined via a prism or the like to constitute one optical system is used. Projection light that penetrates the prism or the like from the electro-optical device can be prevented from being incident on the TFT of the electro-optical device.

[0003]

However, the above-described various light-shielding techniques have the following problems.

That is, according to the technique of forming a light-shielding film on a counter substrate or a TFT array substrate, the space between the light-shielding film and the channel region is three-dimensionally viewed, for example, as a liquid crystal layer, an electrode, or an interlayer insulating film. And so on, so that the light obliquely incident between them is not sufficiently shielded. In particular, in a small electro-optical device used as a light valve of a projector, the incident light is a light beam obtained by focusing light from a light source with a lens, and includes a component that is obliquely incident and cannot be ignored. Insufficient blocking of such oblique incident light poses a practical problem.

In addition, light that has entered the electro-optical device from a region without the light-shielding film is exposed to the inner surface of the light-shielding film or the data line (that is, the data line).
After the light is reflected by the surface facing the channel region), the reflected light or the multiple reflected light further reflected by the light-shielding film or the inner surface of the data line may eventually reach the channel region of the TFT. is there. Further, according to the technique of shielding light with data lines, the data lines are formed in a stripe shape extending perpendicular to the scanning lines when viewed two-dimensionally, and the adverse effect of the capacitive coupling between the data lines and the channel region is negligible. Since it is necessary to arrange a thick interlayer insulating film between them, it is basically difficult to sufficiently shield light.

According to the technique described in Japanese Patent Application Laid-Open No. 9-33944, an a-Si film is formed on a gate line, so that the adverse effect of capacitive coupling between a gate electrode and an a-Si film is reduced. It is necessary to stack a relatively thick interlayer insulating film between them. As a result, the laminated structure is complicated and enlarged due to the additionally formed a-Si film, interlayer insulating film, and the like, and it is also difficult to sufficiently shield obliquely incident light and internally reflected light. In particular, as the electro-optical device has been improved in definition or the pixel pitch has been reduced to meet the general demand for higher quality of display images in recent years, according to the conventional various light shielding techniques described above, sufficient light shielding has been achieved. It is more difficult to perform the process, and there is a problem that flicker or the like occurs due to a change in the transistor characteristics of the TFT, and the quality of a displayed image is reduced.

Incidentally, in order to improve such light resistance,
It is thought that the area for forming the light-shielding film may be expanded, but if the area for forming the light-shielding film is expanded, it is fundamentally necessary to increase the aperture ratio of each pixel in order to improve the brightness of the display image. The problem that it becomes difficult arises.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide an electro-optical device which is excellent in light resistance, has a relatively high aperture ratio of each pixel, and can display a high-quality image. As an issue.

[0009]

(1) In order to solve the above problems, an electro-optical device according to the present invention includes a pair of substrates, an electro-optical material provided between the pair of substrates, and the pair of substrates. A pixel electrode formed on one of the pixel electrodes, a thin film transistor connected to the pixel electrode, a light shielding layer covering at least a channel region of the thin film transistor, and a light absorbing layer disposed between the light shielding layer and the thin film transistor. Prepare.

According to the electro-optical device of the present invention, at least the channel region of the thin film transistor connected to the pixel electrode is shielded from light by the light shielding layer.

Here, generally, an Al (aluminum) film,
In the case where a light-shielding layer made of a light-shielding metal film such as a Cr (chromium) film is used, light from the side where the light-shielding layer is provided for the thin film transistor is the surface of the light-shielding layer on the side not facing the thin film transistor. (I.e., the outer surface of the light-shielding layer in the electro-optical device), the light can be basically shielded sufficiently by reflecting light. That is, if the light-shielding layer is provided on the side where incident light (for example, projection light in the case of a projector) enters the thin film transistor, the incident light can be shielded by the outer surface of the light-shielding layer.
Alternatively, if a light-shielding layer is provided on the side from which incident light is emitted with respect to the thin film transistor, return light (for example, reflected light from the back surface in the case of a projector use or a plurality of electro-optical devices such as a multi-plate type projector use a light). When used in combination as a bulb, light that penetrates the synthetic optical system from another light valve can be blocked by the outer surface of the light-blocking layer. However, the light obliquely returns (for example, when the light shielding layer is arranged on the incident side of the thin film transistor) or the incident light (for example, light shielding When the layer is disposed on the emission side of the thin film transistor), the light is at least partially reflected on the surface of the light shielding layer on the side facing the thin film transistor (that is, the inner surface of the light shielding layer in the electro-optical device). Then, between the light-shielding layer and the thin film transistor, such oblique incident light and return light are reflected on the inner surface of the light-shielding layer, and the internal reflected light is further reflected by another film. Generate multiple reflections. Therefore, simply providing the light-shielding layer for the thin-film transistor makes the internal reflected light and multiple reflected light resulting from the reflection on the inner surface of the light-shielding layer ultimately independent of the size and arrangement of the light-shielding layer. In this case, the light is incident on the thin film transistor and the characteristics of the transistor are deteriorated.

According to the present invention, however, light which passes through the side of the thin film transistor from the side opposite to the side on which such a light-shielding layer is provided and tries to reach the inner surface of the light-shielding layer obliquely or is reflected by the inner surface of the light-shielding layer. Light is absorbed by the light absorbing layer disposed between the light blocking layer and the thin film transistor. As a result, by providing a light-shielding layer made of a metal film such as an Al film or a Cr film having a high reflectivity, light incident on the outer surface of the light-shielding layer is sufficiently shielded, so that deterioration of transistor characteristics due to light leakage is effectively prevented. Can be prevented. Further, the light-shielding layer can effectively prevent light from leaking in the image display area and lowering the contrast ratio. On the other hand, light reflected on the inner surface and multiple reflected light resulting from reflection on the inner surface of the light-shielding layer are absorbed by the light-absorbing layer, so that deterioration of transistor characteristics due to light leakage can be more effectively prevented. In addition, such light shielding and light absorption can be performed relatively close to the thin film transistor, as compared with the case where the light shielding film provided on a traditional counter substrate is used. The light-shielding performance can be improved while avoiding an increase in the film formation region (that is, without unnecessarily narrowing the non-opening region of each pixel).

As a result, there is provided an electro-optical device in which the aperture ratio of each pixel is high, the characteristic deterioration due to light leakage of the thin film transistor is reduced due to the high light resistance, and the contrast ratio is high and a high quality image can be displayed. Is achieved.

In the present invention, the interlayer distance between the light-shielding layer and the light-absorbing layer may be shortened without any film between them or by arranging an extremely thin insulating film or the like. The length may be increased by disposing a thicker interlayer insulating film between the two. As described below, from the viewpoint of constructing a storage capacitor using the light shielding layer and the light absorbing layer as a pair of capacitance electrodes, and from the viewpoint of releasing heat generated in the light absorbing layer through the light shielding layer, It is advantageous to shorten the interlayer distance between the light shielding layer and the light absorbing layer.

(2) In one aspect of the electro-optical device of the present invention, the light absorption layer is mainly composed of a main material forming a channel region of the thin film transistor. For example, it is made of a polysilicon film containing silicon as a main material and doped with P, B, and As to make silicon a conductor.

The channel of the thin film transistor is polysilicon mainly composed of silicon. This polysilicon is lightly doped with B, P, As or the like to control the threshold voltage Vth of the thin film transistor, or is undoped.

Further, amorphous silicon or single crystal silicon may be used for the channel and the light absorbing layer instead of polysilicon.

(3) In another aspect of the electro-optical device according to the present invention, the light absorption layer is made of a silicon film.

According to this aspect, the light absorbing layer made of the silicon film can absorb the light that is going to reach the inner surface of the light shielding layer and the light that has been reflected by the inner surface. Therefore, the generation of internally reflected light and multiple reflected light can be effectively prevented. In particular, if a polysilicon film is adopted as a semiconductor layer forming a channel region of a thin film transistor, light absorption characteristics similar to or the same as light absorption characteristics (frequency dependency, etc.) in the channel region can be obtained.
The light absorbing layer will have. Therefore, it is very advantageous since the light absorption layer can absorb and remove mainly the light component which causes light leakage by being absorbed in the channel region.

(4) In another aspect of the electro-optical device according to the present invention, the light shielding layer is formed of a film containing a metal.

According to this aspect, the light-shielding layer made of a metal-containing film allows the outer surface of the light-shielding layer to sufficiently shield incident light and return light. In this case, in particular, the internal reflection light and the multiple reflection light can be absorbed and removed by the light absorption layer, so that a film containing a metal having an extremely high reflectance such as an Al film can be adopted. Incidentally, in addition to the Al film, as a film containing a metal, for example,
Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), Pb
A simple metal, an alloy, a metal silicide, a polysilicide containing at least one of high-melting metals such as (lead), and a laminate of these are exemplified.

(5) In another aspect of the electro-optical device according to the present invention, the light shielding layer is disposed above the thin film transistor on the substrate.

According to this aspect, incident light can be shielded by the outer surface of the light-shielding layer disposed above the thin-film transistor. Then, the return light that is going to reach the inner surface of the light-shielding layer and the light that is reflected on the inner surface of the light-shielding layer are absorbed and removed by the light-absorbing layer. Deterioration of characteristics of the thin film transistor can be prevented by the light shielding layer and the light absorbing layer.

(6) In the aspect in which the light-shielding layer is disposed on the upper side, the light-shielding layer may be composed of a data line.

According to this structure, the data line made of an Al film or the like has a function as a light-shielding layer in addition to a function as a wiring, so that a dedicated light-shielding layer is additionally formed. It is not necessary to invite complication. Therefore, it is very advantageous in simplifying the device configuration and the manufacturing process.

(7) In the aspect in which the light-shielding layer is disposed on the upper side, the light-shielding layer includes a capacitance line disposed between a data line and the thin-film transistor, and the light-absorbing layer includes
It may be constituted by a capacitor electrode which is arranged to face the capacitor line via a dielectric film and is divided into islands for each pixel.

According to this structure, the capacitance line made of a metal film, a polysilicon film or the like is provided with a function as a light shielding layer in addition to the function as a wiring, and at the same time, the capacitance electrode made of a polysilicon film or the like is formed. In addition, by providing a function as a light absorption layer in addition to a function as an electrode, the formation of a dedicated light-blocking layer or light absorption layer does not require a complicated laminated structure. Therefore, it is very advantageous in simplifying the device configuration and the manufacturing process.

(8) In the aspect in which the light-shielding layer is disposed on the upper side, the light-shielding layer is connected to the thin film transistor and is connected to a plurality of data lines extending in a first direction and to the pixel electrode. It may comprise a plurality of capacitance lines each extending in a second direction intersecting the first direction.

According to this structure, the data line made of the Al film or the like has a function as a part of the light shielding layer in addition to the function as the wiring, and is made of the metal film or the polysilicon film. In addition to the function as wiring,
By providing a function as a part of the light-shielding layer, it is not necessary to add a dedicated light-shielding layer to complicate the laminated structure. In particular, if the data line is used as a light shielding layer in the direction along the data line, and the capacitance line is used as the light shielding layer in the direction along the capacitor line or the scanning line, the wiring layout is less wasteful. I'm done. Therefore, it is very advantageous in simplifying the device configuration and the manufacturing process.

(9) Alternatively, in the aspect in which the light-shielding layer is disposed on the upper side, the light-shielding layer is formed of one layer of a capacitor line having a multilayer structure disposed between the data line and the thin film transistor; The light absorbing layer may be formed of another layer of the capacitance line closer to the thin film transistor than the one layer.

With this configuration, both the light-shielding function and the light-absorbing function can be provided by the capacitance line having a multilayer structure including both the light-shielding layer and the light-absorbing layer. In addition, heat generated by light absorption in the light absorbing layer can be released via the light shielding layer.

(10) Further, in various cases having the capacitance line as described above, the capacitance line is formed in a stripe shape extending in a direction intersecting the data line in the image display area. A peripheral region located around the image display region may be connected to a constant potential source.

According to this structure, the capacitance line can be lowered to a constant potential in the peripheral region, and the constant potential portion of the capacitance line opposed to each capacitance electrode in the image display region is defined as a storage capacitor. It can function favorably as a fixed potential side capacitor electrode. Therefore, the performance of the storage capacitor can be improved. As such a constant potential source,
A constant potential source such as a positive power supply or a negative power supply supplied to a peripheral driving circuit for driving the thin film transistor may be used, or a constant potential supplied to a counter electrode of a counter substrate may be used.

(11) When the capacitance line is connected to the constant potential source as described above, the capacitance lines are connected to each other in the peripheral region, and are connected to the constant potential source via one or more contacts. May be connected together.

With this configuration, in the image display area,
A plurality of stripe-shaped capacitor lines can be collectively dropped to a constant potential in the peripheral region by one or more contacts (for example, contacts provided at four corners of the substrate).

(12) Alternatively, when the capacitance line is connected to the constant potential source, the capacitance lines are connected to each other in the peripheral region, and are connected to the constant potential source via a plurality of contacts. The connection may be redundant.

With this configuration, in the image display area,
A plurality of stripe-shaped capacitor lines can be stably and reliably dropped to a constant potential by a plurality of redundantly provided contacts in a peripheral region.

(13) In the aspect in which the light-shielding layer is disposed on the upper side, another light-shielding layer is disposed below the thin-film transistor on the substrate and covers at least a channel region of the thin-film transistor. You may.

According to this structure, the other light shielding film can shield the return light coming from below the thin film transistor, and can shield light from above and below the thin film transistor. In this case, in particular, the internal reflection light and the multiple reflection light that are likely to be generated between the two light shielding films can be absorbed and removed by the light absorbing layer. In addition, other light shielding layers are, for example,
It may be composed of a single metal, an alloy, a metal silicide, a polysilicide containing at least one of refractory metals such as Ti, Cr, W, Ta, Mo, and Pb, and a laminate of these.

(14) In this case, another light-absorbing layer which is disposed between the other light-shielding layer and the thin-film transistor and is mainly made of a main material (for example, silicon or polysilicon) for forming a channel of the thin-film transistor. May be further provided.

With this configuration, the internal reflection light and the multiple reflection light that are likely to be generated between the two light-shielding films can be more strongly absorbed and removed by the two light absorbing layers.

(15) In another aspect of the electro-optical device according to the present invention, the light shielding layer is disposed below the thin film transistor on the substrate.

According to this aspect, the return light can be shielded by the outer surface of the light shielding layer disposed below the thin film transistor. Then, the incident light that is going to reach the inner surface of the light-shielding layer and the light that is reflected on the inner surface of the light-shielding layer are absorbed and removed by the light absorbing layer. Deterioration of characteristics of the thin film transistor can be prevented by the light shielding layer and the light absorbing layer.
The light-shielding layer disposed on the lower side of the thin film transistor in this way includes, for example, a simple metal, an alloy, a metal silicide, and / or a metal containing at least one of refractory metals such as Ti, Cr, W, Ta, Mo, and Pb. What is necessary is just to comprise from polysilicide and what laminated these.

(16) In another aspect of the electro-optical device of the present invention, the light absorption layer includes a portion formed of an intermediate conductive layer that relays the pixel electrode or data line to the thin film transistor.

According to this aspect, the intermediate conductive layer made of a polysilicon film or the like is provided with a function as a part of the light absorbing layer in addition to the function of relay connection, thereby adding a dedicated light absorbing layer. It is possible to reduce the complexity of the laminated structure due to the formation. Therefore, it is advantageous in simplifying the device configuration and the manufacturing process. If the intermediate connection layer is used for relay connection in this way, even if the distance between the thin film transistor and the pixel electrode or between the thin film transistor and the data line is long, the two can be connected with one contact hole. The two can be satisfactorily connected by two or more series contact holes having a relatively small diameter while avoiding difficulty.

(17) In another aspect of the electro-optical device of the present invention, the light-shielding layer has a higher thermal conductivity than the light-absorbing layer.

According to this aspect, the heat generated by the light absorption in the light absorbing layer can be released through the light shielding layer having high thermal conductivity. That is, the amount of heat transmitted from the light absorption layer to the thin film transistor can be reduced, and thus, heat leakage generated in the thin film transistor can be reduced. Therefore, the transistor characteristics can be remarkably improved by reducing both light leakage and heat leakage by the light-shielding layer and the light absorbing layer.

(18) In this aspect, an interlayer distance between the thin film transistor and the light absorbing layer may be larger than an interlayer distance between the light absorbing layer and the light shielding layer.

According to this structure, the heat generated by the light absorption in the light absorbing layer can be released more efficiently through the light shielding layer disposed near the light absorbing layer. That is, the amount of heat transmitted to the thin film transistor can be reduced by an amount arranged far from the light absorbing layer. Note that an interlayer insulating film or the like is provided between the thin film transistor and the light absorbing layer or between the light absorbing layer and the light shielding layer.

(19) In another aspect of the electro-optical device according to the present invention, the light-shielding layer is laminated on the light-absorbing layer with an insulating film interposed therebetween, and is one-way as viewed in plan from the light-absorbing layer. Largely formed.

According to this aspect, light shielding on the outer surface side of the light-shielding layer is performed by the light-shielding layer slightly larger than the light-absorbing layer, and at the same time, light-shielding layer on the inner surface of the light-shielding layer is slightly smaller than the light-shielding layer. Can absorb light.

(20) According to another aspect of the electro-optical device of the present invention, a pair of substrates, an electro-optical material formed between the pair of substrates, and a pixel electrode formed on one of the pair of substrates are provided. A thin film transistor connected to the pixel electrode, a first light blocking layer covering at least a channel region of the thin film transistor, and a first light absorbing layer facing the first light blocking layer via the thin film transistor. And

According to this aspect, the light entering the thin film transistor is shielded by the first light shielding layer, and the light is absorbed by the first light absorbing layer to prevent the light from being reflected by the thin film transistor.

(21) Further, it is preferable that the first light shielding layer is provided on the light incident side with respect to the thin film transistor.

According to this aspect, it is possible to prevent the thin film transistor from being directly irradiated with light by the first light shielding layer.

(22) A second light absorbing layer may be provided between the first light shielding layer and the thin film transistor.

According to this aspect, the light directed to the thin film transistor side of the first light-shielding layer due to internal reflection or the like is reflected by the second light-shielding layer.
It is absorbed by the light absorbing layer.

(23) Further, a second light-shielding layer may be provided on the side of the first light-absorbing layer opposite to the thin-film transistor.

According to this aspect, light directed to the thin film transistor by internal reflection or the like can be shielded by the second light shielding layer.

(24) The second light-shielding layer may be formed in a region inside the first light-absorbing layer.

According to this aspect, even if the first light absorbing layer extending from the second light shielding layer is irradiated with strong oblique light to the first light absorbing layer and leaks from the first light absorbing layer, Light can escape to the outside as it is.

(25) The second light-shielding film is formed in a region inside the first light-shielding film.

According to this aspect, the second light-shielding film can avoid oblique light.

(26) In another aspect of the electro-optical device according to the present invention, a pair of substrates, an electro-optical material formed between the pair of substrates, and a pixel electrode formed on one of the pair of substrates are provided. A thin film transistor connected to the pixel electrode, a first light absorbing layer covering at least a channel region of the thin film transistor, and a second light absorbing layer facing the first light absorbing layer via the thin film transistor. It is characterized by.

According to this aspect, particularly the light entering obliquely can be absorbed by the first light absorbing layer and the second light absorbing layer, and the light applied to the thin film transistor can be reduced.

(27) A translucent insulating film is interposed between the pixel electrode, the thin film transistor, and the first light absorbing layer.

(28) An embodiment of the projection type display device according to the present invention comprises a light source, a light valve comprising any one of the electro-optical devices of claims 1 to 27, and a device for guiding light emitted from the light source to the light valve. A light guide member for emitting light and a projection optical member for projecting light modulated by the light valve are provided.

According to this aspect, since light hardly enters the thin film transistor in the electro-optical device, a high-quality image can be projected.

(29) An aspect of the electro-optical device substrate according to the present invention includes a pixel electrode, a thin film transistor connected to the pixel electrode, a light shielding layer covering at least a channel region of the thin film transistor, the light shielding layer and the thin film transistor. And a light absorbing layer disposed between the two.

(30) An aspect of the electro-optical device substrate according to the present invention includes a pixel electrode, a thin film transistor connected to the pixel electrode, a light-shielding layer covering at least a channel region of the thin film transistor, and the thin film transistor. And a light absorbing layer facing the light shielding layer.

(31) An aspect of the electro-optical device substrate according to the present invention includes a pixel electrode, a thin film transistor connected to the pixel electrode, a first light absorbing layer covering at least a channel region of the thin film transistor, And a second light absorbing layer opposed to the first light absorbing layer via a thin film transistor.

The thin film transistor according to the present invention may be of a so-called top gate type in which a gate electrode formed of a part of a scanning line is located above a channel region, or may be a gate electrode formed of a part of a scanning line. May be a so-called bottom gate type located on the lower side. Further, the interlayer position of the pixel electrode may be above or below the scanning line on the substrate.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0074]

Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, the electro-optical device according to the invention is applied to a liquid crystal device.

First, the configuration of the electro-optical device according to the embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of the electro-optical device. FIG. 2 is a plan view of a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed. FIG. 3 is a sectional view taken along line AA ′ of FIG. In FIG. 3, the scale of each layer and each member is different so that each layer and each member have a size that can be recognized in the drawing.

In FIG. 1, each of a plurality of pixels formed in a matrix forming an image display area of the electro-optical device according to the present embodiment has a pixel electrode 9a and a TFT 30 for controlling switching of the pixel electrode 9a. Are formed, and the data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. good. The scanning line 3 is connected to the gate of the TFT 30.
a is electrically connected to the scanning line 3a at predetermined timings in a pulsed manner with the scanning signals G1, G2,.
Are applied in this order in a line-sequential manner.
The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30 as a switching element for a certain period, the data line 6 is turned off.
The image signals S1, S2,..., Sn supplied from a are written at a predetermined timing. The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a are connected to a counter electrode (described later) formed on a counter substrate (described later). For a fixed period of time. The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. In the normally white mode, the transmittance for the incident light decreases according to the voltage applied in each pixel unit. In the normally black mode, the light enters according to the voltage applied in each pixel unit. Light transmittance is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode.

In FIG. 2, a plurality of transparent pixel electrodes 9 are arranged in a matrix on the TFT array substrate of the electro-optical device.
a (the outline is indicated by a dotted line portion 9a '), and the data line 6a and the scanning line 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a, respectively.

Further, the scanning line 3a is arranged so as to face the channel region 1a 'indicated by the hatched region in the semiconductor layer 1a, which rises to the right in the figure, and the scanning line 3a functions as a gate electrode (particularly, In the present embodiment, the scanning line 3a
Is formed wide in a portion to be the gate electrode). In this manner, at the intersections of the scanning lines 3a and the data lines 6a, the scanning lines 3a and
A pixel switching TFT 30 is provided in which a is opposed to each other as a gate electrode.

As shown in FIGS. 2 and 3, in this embodiment, in particular, the capacitance line 300 is formed of a first film 72 made of a conductive polysilicon film or the like and a first film 72 made of a metal silicide film containing a refractory metal. It has a multilayer structure in which two films 73 are stacked.
Among them, the second film 73 is formed of the capacitor line 300 or the storage capacitor 7.
In addition to the function as a fixed potential side capacitor electrode of 0, the TFT 30
Has a function as a light shielding layer for shielding the TFT 30 from incident light. Further, the first film 72 is formed of the capacitance line 300.
Alternatively, in addition to the function as the fixed potential side capacitor electrode of the storage capacitor 70, the storage capacitor 70 has a function as a light absorbing layer disposed between the TFT 30 and the second film 73 as a light shielding layer. On the other hand, the relay layer 71a opposed to the capacitor line 300 via the dielectric film 75 functions as a pixel potential side capacitor electrode of the storage capacitor 70, as well as the second film 73 as a light shielding layer and the TFT 3
0, and has a function as a light absorption layer disposed between the pixel electrode 9a and the high-concentration drain region 1 of the TFT 30.
and has a function as an intermediate conductive layer for relay connection with e. Such light blocking and light absorption will be described later in detail with reference to FIGS. Note that these first light absorbing layers serve as first light absorbing layers.
The film 72 and the relay layer 71a are made of a material such as a polysilicon film having a higher light absorptivity than the second film 73 as a light shielding layer.

In the present embodiment, the storage capacitor 70 is a TFT
A relay layer 71a as a pixel potential side capacitance electrode connected to the high-concentration drain region 1e (and the pixel electrode 9a)
And a part of the capacitance line 300 as the fixed potential side capacitance electrode is formed by being opposed to each other with the dielectric film 75 interposed therebetween.

When viewed in plan, the capacitance line 300 is
The portion overlapping the TFT 30 protrudes vertically in FIG. The data lines 6a extending in the vertical direction in FIG. 2 and the capacitance lines 300 extending in the horizontal direction in FIG. 2 are formed so as to intersect with each other. When viewed, a lattice-shaped light-shielding layer is formed, and defines an opening area of each pixel.

On the other hand, T on the TFT array substrate 10
Below the FT 30, a lower light-shielding film 11a is provided in a lattice shape.

In the present embodiment, in particular, the formation region of the lattice-shaped lower light-shielding film 11a is located in the formation region of the lattice-shaped upper light-shielding layer (ie, the capacitor electrode 300 and the data line 6a) (ie, the lattice-shaped lower light-shielding film 11a). , The lower light-shielding film 1
1a is formed narrower than the widths of the capacitance line 300 and the data line 6a). Then, the channel region 1 of the TFT 30
a, including the junction with the low-concentration source region 1b and the low-concentration drain region 1c (that is, the LDD region), is within the intersection region of such a lattice-shaped lower light-shielding film 11a (accordingly, (In the crossing region of the upper light-shielding film).

The second film 7 constituting one example of these light shielding layers
3 and the lower light shielding film 11a are, for example, Ti, Cr,
It is made of a single metal, an alloy, a metal silicide, a polysilicide, or a laminate of any of these, including at least one of refractory metals such as W, Ta, Mo, and Pb. Also,
Since the capacitance line 300 including such a second film 73 has a multilayer structure and the first film 72 is a conductive polysilicon film, the second film 73 is made of a conductive material. It is not necessary to form the first film 72 but the second film
If the film 73 is also formed from a conductive film, the resistance of the capacitance line 300 can be further reduced.

In FIG. 3, a dielectric film 7 disposed between a relay layer 71a as a capacitor electrode and a capacitor line 300 is provided.
5 is a relatively thin HT having a thickness of, for example, about 5 to 200 nm.
It is composed of a silicon oxide film such as an O film, an LTO film, or a silicon nitride film. From the viewpoint of increasing the storage capacitance 70, as long as the reliability of the film is sufficiently obtained,
The thinner the dielectric film 75, the better.

The first film 72 not only functioning as a light absorbing layer but also forming a part of the capacitance line 300 has a thickness of, for example, 15 μm.
It is made of a polysilicon film of about 0 nm. In addition, the second film 73 not only functioning as a light shielding layer but also forming another part of the capacitance line 300 is made of, for example, a tungsten silicide film having a thickness of about 150 nm. Thus, the dielectric film 75
The first film 72 arranged on the side in contact with the dielectric film 75 is made of a polysilicon film, and the relay layer 71a in contact with the dielectric film 75 is made of a polysilicon film, so that the deterioration of the dielectric film 75 can be prevented. For example, if a configuration is adopted in which a metal silicide film is brought into contact with the dielectric film 75, a metal such as a heavy metal enters the dielectric film 75, and the performance of the dielectric film 75 is deteriorated. Further, when such a capacitor line 300 is formed on the dielectric film 75, if the capacitor line 300 is formed continuously without performing a photoresist process after the formation of the dielectric film 75, the Since the quality can be improved, the dielectric film 75 can be formed thin, and the storage capacitance 70 can be finally increased.

As shown in FIGS. 2 and 3, data line 6a
Is connected to a relay layer 71b for relay connection via a contact hole 81. The relay layer 71b is further connected via a contact hole 82 to the high-concentration source region 1d in the semiconductor layer 1a made of, for example, a polysilicon film. Is electrically connected to The relay layer 71b is formed simultaneously from the same film as the relay layer 71a having various functions described above.

The capacitance line 300 extends from the image display area where the pixel electrode 9a is arranged to the periphery thereof, is electrically connected to a constant potential source, and has a fixed potential. This will be described later in detail with reference to FIGS.

The pixel electrode 9a is electrically connected to the high-concentration drain region 1e of the semiconductor layer 1a via the contact holes 83 and 85 by relaying the relay layer 71a. That is, in the present embodiment, the relay layer 71a
Indicates that, in addition to the function of the storage capacitor 70 as a pixel potential side capacitor electrode and the function as a light absorption layer, the pixel electrode 9a
It performs the function of relay connection to T30. When the relay layers 71a and 71b are used as the relay layers in this way, even if the interlayer distance is as long as about 2000 nm, for example, it is possible to avoid the technical difficulty of connecting them with one contact hole while avoiding the technical difficulty of connecting them with one contact hole. The two or more contact holes can be connected favorably to each other, so that the pixel aperture ratio can be increased, and it is also useful for preventing penetration of etching when the contact holes are opened.

In FIGS. 2 and 3, the electro-optical device is
The device includes a transparent TFT array substrate 10 and a transparent opposing substrate 20 disposed opposite to the TFT array substrate 10. The TFT array substrate 10 is made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate.

In the TFT array substrate 10, a lattice-shaped groove 10cv is dug in a plan view (indicated by a hatched area at the lower right in FIG. 2). Scanning line 3a, data line 6
a, wiring and elements such as the TFT 30 are embedded in the trench 10cv. As a result, the step between the region where the wiring, the element, and the like are present and the region where the wiring, the element, and the like are not present is reduced, and ultimately, image defects such as defective alignment of the liquid crystal due to the step can be reduced.

As shown in FIG. 3, the TFT array substrate 10
Is provided with a pixel electrode 9a, and above it,
Alignment film 16 that has been subjected to a predetermined alignment treatment such as a rubbing treatment
Is provided. The pixel electrode 9a is made of, for example, ITO (In
It is composed of a transparent conductive film such as a dium tin oxide film. The alignment film 16 is made of, for example, an organic film such as a polyimide film.

On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode 21. I have. The counter electrode 21 is made of, for example, a transparent conductive film such as an ITO film. The alignment film 22 is made of an organic film such as a polyimide film.

The opposing substrate 20 may be provided with a lattice-shaped or stripe-shaped light-shielding film. By adopting such a configuration, as described above, the capacitance line 30 constituting the light shielding layer
0 and the light-shielding film on the opposing substrate 20 together with the data lines 6a, the incident light from the opposing substrate 20 side is
a ′, the lightly doped source region 1b and the lightly doped drain region 1
c can be more reliably prevented from entering. Further, such a light-shielding film on the counter substrate 20 has a function of preventing a temperature rise of the electro-optical device by forming at least a surface irradiated with incident light with a highly reflective film. Note that the light-shielding film on the counter substrate 20 is preferably formed so as to be located inside the light-shielding layer including the capacitor lines 300 and the data lines 6a in plan view. As a result, the light-shielding film on the counter substrate 20 can provide such effects of light-shielding and temperature rise prevention without lowering the aperture ratio of each pixel.

The space between the TFT array substrate 10 and the opposing substrate 20 having the pixel electrode 9a and the opposing electrode 21 arranged in such a manner as to face each other is provided in a space surrounded by a sealing material described later. Liquid crystal, which is an example of an electro-optical material, is sealed, and a liquid crystal layer 50 is formed. The liquid crystal layer 50 holds the alignment film 1 in a state where no electric field is applied from the pixel electrode 9a.
A predetermined orientation state is taken by 6 and 22. Liquid crystal layer 50
Is composed of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed. The sealing material is used for bonding the TFT array substrate 10 and the opposing substrate 20 around them.
For example, it is an adhesive made of a photo-curing resin or a thermosetting resin, and a gap material such as glass fiber or glass beads for mixing the two substrates at a predetermined distance is mixed.

Further, under the pixel switching TFT 30, a base insulating film 12 is provided. Base insulating film 1
2 has a function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, and is formed on the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 can be roughened during polishing or stains remaining after cleaning. T for pixel switching
It has a function of preventing deterioration of the characteristics of the FT 30.

In FIG. 3, the pixel switching TFT
Reference numeral 30 denotes an LDD (Lightly Doped Drain) structure, and includes a scanning line 3a and a channel region 1 of a semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a.
a ', an insulating thin film 2 including a gate insulating film for insulating the scanning line 3a from the semiconductor layer 1a, a low-concentration source region 1b and a low-concentration drain region 1c of the semiconductor layer 1a, a high-concentration source region 1d of the semiconductor layer 1a, and a high-concentration source region. It has a concentration drain region 1e.

On the scanning line 3a, a high concentration source region 1d
A first interlayer insulating film 41 is formed in which a contact hole 82 leading to the contact hole 83 and a contact hole 83 leading to the high concentration drain region 1e are opened.

Relay layers 71a and 71b and a capacitor line 300 are formed on the first interlayer insulating film 41, and a contact hole 81 and a contact hole 85 respectively leading to the relay layers 71a and 71b are formed thereon. An apertured second interlayer insulating film 42 is formed.

In this embodiment, the first interlayer insulating film 41
By sintering at 1000 ° C., the ions implanted into the polysilicon film forming the semiconductor layer 1a and the scanning line 3a may be activated. On the other hand, by not performing such sintering on the second interlayer insulating film 42, stress generated near the interface of the capacitance line 300 may be reduced.

The data lines 6a are formed on the second interlayer insulating film 42, and the third interlayer insulating film 4 on which a contact hole 85 leading to the relay layer 71a is formed.
3 are formed. The pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 43 configured as described above.

The light absorbing layers 72 and 71a are formed of the underlying insulating film 12
Further, the interlayer insulating films 41, 42, and 43 are formed of a material that is more absorbent.

According to the present embodiment configured as described above, the channel region 1 of the TFT 30 is arranged from the counter substrate 20 side.
When the incident light is to be incident on a ′ and its vicinity, light is shielded by a lattice-shaped light-shielding layer including the data line 6a and the capacitance line 300 (particularly, the second film 73). On the other hand, when return light attempts to enter the channel region 1a ′ of the TFT 30 and its vicinity from the TFT array substrate 10 side, the light is shielded by the lower light-shielding film 11a (especially by a multiple-plate type color projector such as a projector). When one electro-optical device is combined via a prism or the like to form one optical system, the return light composed of the projected light portion that penetrates the prism or the like from another electro-optical device is strong, so it is effective. is there.).
Then, oblique return light is applied to the inner surface of the data line 6a made of an Al film having a high reflectivity and the second film 73 made of a high melting point metal film having a relatively high reflectivity (that is, the surface facing the TFT 30). The internal reflection light, multiple reflection light, and the like generated by the incident light are reflected by the first film 72 and the relay layer 71 as the light absorbing layer.
Absorbed and removed by a. As a result, the characteristics of the TFT 30 hardly deteriorate due to light leakage, and the electro-optical device can have extremely high light resistance.

In particular, in the present embodiment, the first film 72 and the relay layer 71a as the light absorbing layer are made of a conductive polysilicon film (or a silicon film such as amorphous silicon), and the channel region has a threshold voltage Vth control. For P,
Since it is made of a doped or non-doped polysilicon film (or a silicon film such as amorphous silicon) doped with B, As, or the like, the light absorption characteristics similar to or the same as the light absorption characteristics (frequency dependence, etc.) in the channel region are obtained. The absorbing layer has. Therefore, the light can be absorbed and removed by the first film 72 and the relay layer 71a, centering on the frequency component that causes light leakage by being absorbed in the channel region 1a '. That is, the light absorbing effect is enhanced by forming the TFT channel and the light absorbing layer with the same main material.

Next, with reference to FIG. 4 to FIG. 7, light-shielding and light absorption in this embodiment will be further described.
Here, FIG. 4 is a schematic plan view extracting and enlarging the upper light-shielding film and the lower light-shielding film in the image display area, and FIGS. 5 and 6 are sectional views taken along the line BB ′ of FIG. At
FIG. 4 is a schematic cross-sectional view showing a state of light shielding and light absorption. FIG. 7 is a schematic cross-sectional view showing light-shielding and light-absorbing states in the BB ′ cross-section of FIG. 4 in the modified embodiment.

As shown in FIG. 4, in the present embodiment, the non-opening area of each pixel mainly includes the capacitance line 300 and the data line (at the position where the capacitance line 300 is interrupted for forming the contact holes 81 and 82). It is defined in a grid by the light-shielding layer composed of the line 6a. Therefore, the capacitance line 300 and the data line 6a can effectively prevent a light leakage from occurring and a decrease in the contrast ratio. Here, the capacitor lines 300 and the data lines 6a exist in a grid pattern above the TFT 30, and a lower light-shielding film 11a arranged in a grid pattern exists below the TFT 30; The formation region of 11a is located in the formation region of the lattice-shaped light-shielding layer composed of the capacitance line 300 and the data line 6a.

Therefore, as shown in FIG. 5, the second film 73 of the capacitor line 300 and the data line 6a are not affected by the incident light L1 incident from the upper side (that is, the incident light incident side) in the electro-optical device. Function as a light shielding layer. Therefore, it is possible to prevent such incident light L1 from reaching the TFT 30. Further, the lower light-shielding film 11a is an upper light-shielding layer (that is, the second film 73 of the capacitor line 300 and the data line 6a).
Since it is formed one size smaller than that, the oblique component included in the incident light L1 passes through the upper light-shielding layer (the capacitance line 300 and the data line 6a) and is reflected by the inner surface of the lower light-shielding film 11a. As a result, the occurrence of internally reflected light and multiple reflected light due to this is also reduced.

On the other hand, as shown in FIG. 6, the lower light-shielding film 11a functions as a light-shielding layer for the return light L2 incident from the lower side (that is, the exit side of the incident light) in the electro-optical device. . Therefore, such return light L2 is generated by the TFT3
It can be prevented from reaching zero. Here, the lower light shielding film 1
1a is an upper light-shielding layer (that is, the second
Since it is formed one size smaller than the film 73 and the data line 6a), a part of the oblique component included in the return light L2 passes through the side of the lower light-shielding layer 11a and passes through the inner surface of the upper light-shielding layer. (Especially, toward the inner surface of the capacitance line 300).
However, the upper light shielding layer (ie, the capacitance line 300)
The light absorption layer (that is, the first film 72 and the relay layer 71a of the capacitance line 300) exists between the TFT 30 and the second film 73 and the data line 6a), and thus is included in the return light L2. The oblique component and the component are the upper light-shielding layer (that is, the second film 73 of the capacitor line 300 and the data line 6a).
Is reflected and absorbed by the light absorbing layer.

As a result, according to the present embodiment, deterioration of characteristics due to light leakage of the pixel switching TFT 30 can be reduced by increasing the light resistance while increasing the aperture ratio of each pixel, and finally the contrast ratio is high and the brightness is high. High-quality image display becomes possible.

In the present embodiment, preferably, the second film 73 constituting the light shielding layer has a higher thermal conductivity than the first film 72 and the relay layer 71a constituting the light absorbing layer. Therefore, the first film 7
2 and the heat generated by the light absorption in the relay layer 71a can be released through the second film 73 having high thermal conductivity. That is, the TFT 3 is formed from the first film 72 and the relay layer 71a.
The amount of heat transmitted to 0 can be reduced, thereby reducing the heat leak generated in the TFT 30. As a result, by reducing both light leakage and heat leakage, the TFT 30
Can be significantly improved.

From the viewpoint of further reducing the heat leakage of the TFT 30, the first interlayer insulating film 41 interposed between the relay layer 71a as the light absorbing layer and the TFT 30 is different from the relay layer 71a as the light absorbing layer. It is preferable that the dielectric film 75 is set to be larger than the dielectric film 75 interposed between the capacitor line 300 having the function of releasing heat as described above. With this setting, heat generated due to light absorption in the relay layer 71a as a light absorbing layer can be more efficiently released through the capacitance line 300.

Note that in the embodiment shown in FIGS. 4 to 6,
Since the lower light-shielding film 11a is formed slightly smaller than the upper light-shielding layer (that is, the second film 73 of the capacitor line 300 and the data line 6a), the oblique component included in the incident light L1 is The configuration is such that it is difficult to reach the inner surface of the lower light-shielding layer 11a. However, depending on the device specifications (for example, how small the lower light-shielding film 11a is, how much the incident light is inclined), etc.
There is a problem with the inner surface reflected light and the multiple reflected light due to the oblique incident light L1 being reflected on the inner surface of 1a.

In such a case, as in the modification shown in FIG. 7, the light absorbing layer 11 is also provided on the inner surface of the lower light shielding film 11a.
b may be provided. With this configuration, the light absorbing layer 11b can absorb and remove the oblique incident light L1 arriving at the inner surface of the lower light-shielding film 11a and the inner reflected light L3 or the multiple reflected light L4 resulting therefrom. The main material forming the light absorbing layer 11b is preferably the same as the material forming the channel region.

As another modification, the modification shown in FIG. 8 may be used. The lower light-shielding film 11a is
The lower absorption layer 11b is formed on the inner side of the lower and upper light-shielding films 11b. With this configuration, the oblique incident light L1 can be absorbed and removed by the lower absorption layer 11b or the upper absorption layers 71a and 72. Further, the oblique incident light L1 transmitted through the lower absorption layer 11b passes without being reflected by the lower light-shielding film 11a, and does not reach the semiconductor layer of the TFT 30.

In the modification shown in FIG. 8, the lower absorption layer 11b is shown to have substantially the same width as the upper absorption layers 71a, 72, but may be formed inside the upper absorption layers 71a, 72. May be wider.

Next, a configuration in which the capacitance line 300 is set to a fixed potential will be described with reference to FIGS. Here, FIG. 9 is a plan view showing an example of a configuration in which the capacitance line 300 is dropped to a constant potential source, and FIG. 10 is a plan view showing another example of a configuration in which the capacitance line 300 is dropped to a constant potential source. .

As shown in FIGS. 9 and 10, the capacitance lines 30 formed substantially in a stripe shape in the image display area 10a.
0 preferably extends to a peripheral area around the image display area 10a and is grouped together. And FIG.
As shown in FIG. 10, in the peripheral area, for example, contact holes 302 provided at the four corners of the TFT array substrate 10 may be collectively connected to the constant potential wiring 303, or as shown in FIG. May be connected to the constant potential wiring 303 ′ through a plurality of contact holes 302 ′ provided in the wiring. 9 and 10, the constant potential wiring 30
3 and 303 'are preferably formed of a low-resistance Al film like the data line 6a.

Further, such constant potential wirings 303 and 3
03 'is connected to the TFT 30 as a constant potential source.
A scanning line driving circuit (to be described later) for supplying a scanning signal for driving the
A constant potential source such as a positive power supply or a negative power supply supplied to a data line driving circuit (described later) for controlling a sampling circuit for supplying the signal to a, or a constant potential supplied to the counter electrode 21 of the counter substrate 20 may be used. .

The lower light-shielding film 11a provided below the TFT 30 also has a capacitance line 300 to prevent the potential fluctuation from adversely affecting the TFT 30.
Similarly to the above, it is preferable to extend from the image display area to the periphery and connect to the constant potential source.

In the embodiment described above, the pixel electrode 9 is formed by stacking a large number of conductive layers as shown in FIG.
The occurrence of a step in a region along the data line 6a and the scanning line 3a on the lower ground (ie, the surface of the third interlayer insulating film 43) is alleviated by digging the groove 10cv in the TFT array substrate 10. Alternatively or additionally, trenches may be dug in the base insulating film 12, the first interlayer insulating film 41, the second interlayer insulating film 42, and the third interlayer insulating film 43, and the wiring such as the data line 6a, the TFT 30, etc. May be performed by embedding the third interlayer insulating film 43 or the second interlayer insulating film 42.
The step on the upper surface of the
g) The flattening process may be performed by polishing in a process or the like, or by flattening using an organic SOG.

In the embodiment described above, the pixel switching TFT 30 preferably has the LDD structure as shown in FIG. 3, but does not implant impurities into the low-concentration source region 1b and the low-concentration drain region 1c. An impurity may be implanted at a high concentration using an offset structure, or using a gate electrode composed of a part of the scanning line 3a as a mask.
A self-aligned TFT that forms high-concentration source and drain regions in a self-aligned manner may be used. In the present embodiment, the gate switching TFT 30 has a single gate structure in which only one gate electrode is disposed between the high-concentration source region 1d and the high-concentration drain region 1e, but two or more gate electrodes are provided between them. It may be arranged. In this way, the TF is more than dual gate or triple gate.
When T is formed, a leak current at a junction between the channel and the source / drain region can be prevented, and a current at the time of off can be reduced.

(Overall Configuration of Electro-Optical Device) The overall configuration of the electro-optical device in each embodiment configured as described above will be described with reference to FIGS. 11 and 12. FIG. Note that FIG.
FIG. 12 is a plan view of the TFT array substrate 10 together with the components formed thereon viewed from the counter substrate 20, and FIG. 12 is a cross-sectional view taken along the line HH 'of FIG.

In FIG. 12, on the TFT array substrate 10, a sealing material 52 is provided along the edge thereof, and in parallel with the sealing material 52, a light shielding as a frame defining the periphery of the image display area 10a is provided. A film 53 is provided. In a region outside the sealing material 52, a data line driving circuit 101 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10. A scanning line driving circuit 1 for driving a scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing.
04 are provided along two sides adjacent to this one side. If the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. In addition, the data line driving circuit 10
1 may be arranged on both sides along the side of the image display area 10a. Further, on one remaining side of the TFT array substrate 10, the scanning line driving circuits 10 provided on both sides of the image display area 10a are provided.
A plurality of wirings 105 are provided to connect the four wirings. In at least one of the corners of the counter substrate 20, a conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20 is provided. Then, as shown in FIG. 12, the counter substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 11 is fixed to the TFT array substrate 10 by the sealing material 52.

Note that, on the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit for applying an image signal to a plurality of data lines 6a at a predetermined timing, a plurality of Data line 6a
A precharge circuit for supplying a precharge signal of a predetermined voltage level prior to the image signal, an inspection circuit for inspecting the quality, defects, and the like of the electro-optical device during manufacturing or shipping. Good.

In the embodiment described above with reference to FIGS. 1 to 12, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TAB (Tape Automated bonding) substrate The driving LSI mounted thereon may be electrically and mechanically connected via an anisotropic conductive film provided on the periphery of the TFT array substrate 10. For example, the TN mode, V
A (Vertically Aligned) mode, PDLC (Polymer D
A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as an ispersed liquid crystal (Crystal) mode or a normally white mode / normally black mode.

The electro-optical device according to the embodiment described above is applied to, for example, a projector as a light valve.

FIG. 13 is a plan view showing the configuration of this projector. As shown in this figure, inside the projector 2100, a lamp unit 2102 including a white light source such as a halogen lamp is provided. The projection light emitted from the lamp unit 2102 is separated into three primary colors of RGB by three mirrors 2106 and two dichroic mirrors 2108 disposed inside, and the light valves 100R and 100G corresponding to the respective primary colors.
And 100B respectively. Here, the configuration of the light valves 100R, 100G, and 100B is the same as that of the liquid crystal panel 100 according to the above-described embodiment, and the primary colors of R, G, and B supplied from a processing circuit (not shown) that inputs image signals. Each is driven by a signal. Also, the light of B color is compared with other R and G colors.
Since the optical path is long, the incidence lens 2
122, relay lens 2123 and emission lens 212
4 is led through a relay lens system 2121 consisting of 4 elements.

Now, the light valves 100R, 100G,
The lights modulated by 100B respectively enter dichroic prism 2112 from three directions. And
In the dichroic prism 2112, the R and B lights are refracted at 90 degrees, while the G light travels straight. Therefore, after the images of each color are combined, a color image is projected on the screen 2120 by the projection lens 2114.

Since the light corresponding to each of the primary colors R, G, and B is incident on the light valves 100R, 100G, and 100B by the dichroic mirror 2108, it is not necessary to provide the color filters as described above. The transmitted images of the light valves 100R and 100B are projected after being reflected by the dichroic mirror 2112, whereas the transmitted images of the light valve 100G are projected as they are.
Is inverted left and right with respect to the display image by the light valve 100G.

In each of the above embodiments, the counter substrate 20
No color filter is provided. However, an RGB color filter may be formed on the counter substrate 20 in a predetermined region facing the pixel electrode 9a together with the protective film. In this way, the electro-optical device in each embodiment can be applied to a direct-view or reflective color electro-optical device other than the projector.

A micro lens may be formed on the counter substrate 20 so as to correspond to one pixel. Or
Pixel electrode 9 on TFT array substrate 10 facing RGB
It is also possible to form a color filter layer with a color resist or the like under a. With this configuration, a bright electro-optical device can be realized by improving the efficiency of collecting incident light. Furthermore, by depositing many layers of interference layers having different refractive indices on the counter substrate 20, utilizing the interference of light,
A dichroic filter for producing RGB colors may be formed. According to the counter substrate with the dichroic filter, a brighter color electro-optical device can be realized.

Other application examples include a display unit of a mobile personal computer, a display unit of a mobile phone, a liquid crystal television, a viewfinder / monitor direct-view video tape recorder, a car navigation device, a pager, The present invention can also be applied to an electronic organizer, a calculator, a word processor, a workstation, a videophone, a POS terminal, a digital still camera, an electronic device equipped with a touch panel, and the like.

The present invention is not limited to the above-described embodiments, but can be appropriately modified without departing from the spirit and spirit of the invention which can be read from the claims and the entire specification. The electro-optical device and the manufacturing method thereof are also included in the technical scope of the present invention.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit of various elements, wiring, and the like provided in a plurality of pixels in a matrix forming an image display area in an electro-optical device according to an embodiment of the present invention.

FIG. 2 is a plan view of a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device according to the embodiment.

FIG. 3 is a sectional view taken along line A-A 'of FIG.

FIG. 4 is a plan view of a pixel on a TFT array substrate, showing an upper light-shielding film and a lower light-shielding film in the embodiment.

FIG. 5 is a schematic cross-sectional view (part 1) showing a state of light blocking and light absorption in a BB ′ cross section of FIG. 4;

FIG. 6 is a schematic cross-sectional view (part 2) showing a state of light shielding and light absorption in a BB ′ cross section of FIG. 4;

FIG. 7 is a schematic cross-sectional view showing a state of light blocking and light absorption in a BB ′ cross section of FIG. 4 in a modified embodiment.

FIG. 8 is a schematic cross-sectional view showing a state of light shielding and light absorption in a BB ′ cross section of FIG. 4 in another modification.

FIG. 9 is a plan view showing an example of a configuration in which a capacitance line 300 is dropped to a constant potential source.

FIG. 10 is a plan view showing another example of the configuration in which the capacitance line 300 is dropped to a constant potential source.

FIG. 11 is a plan view of a TFT array substrate in the electro-optical device according to the embodiment, together with components formed thereon, viewed from a counter substrate side.

FIG. 12 is a sectional view taken along line H-H ′ of FIG. 11;

FIG. 13 is a plan view illustrating a configuration of a projector.

[Explanation of symbols]

 1a Semiconductor layer 1a 'Channel region 1b Low-concentration source region 1c Low-concentration drain region 1d High-concentration source region 1e High-concentration drain region 2 Insulating thin film 3a Scanning line 6a Data line 9a Pixel electrode 10 ... TFT array substrate 10cv Groove 11a Lower light-shielding film 12 Base insulating film 16 Alignment film 20 Counter substrate 21 Counter electrode 22 Alignment film 30 TFT 50 Liquid crystal layer 70 Storage capacitor 71a Relay layer 71b ... Relay layer 72. First film of capacitance line 73... Second film of capacitance line 75. Dielectric film 81, 82, 83, 85... Contact hole 300.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G03B 21/00 G03B 21/00 E 33/12 33/12 G09F 9/30 338 G09F 9/30 338 349 349C 349Z 9/35 9/35 F term (reference) 2H088 EA12 HA08 HA12 HA13 HA14 HA23 HA24 HA28 MA20 2H091 FA02Y FA05X FA21X FA26X FA34Y FA41Z GA08 GA13 LA30 2H092 GA29 JA24 JA25 JA37 JA46 KA05 KB25 NA25 PA03 PA07 PA09 PA09 RA09 CA19 EA04 EA07 ED15

Claims (31)

[Claims] A pair of substrates; an electro-optical material provided between the pair of substrates; a pixel electrode formed on one of the pair of substrates; a thin film transistor connected to the pixel electrode; An electro-optical device comprising: a light-shielding layer that covers at least a channel region of the above; and a light absorption layer disposed between the light-shielding layer and the thin film transistor. 2. The electro-optical device according to claim 1, wherein the light absorption layer is mainly made of a main material forming a channel region of the thin film transistor. 3. The electro-optical device according to claim 1, wherein the light absorbing layer is made of a silicon film. 4. The electro-optical device according to claim 1, wherein the light shielding layer is formed of a film containing a metal. 5. The electro-optical device according to claim 1, wherein the light shielding layer is disposed on the substrate above the thin film transistor. 6. The electro-optical device according to claim 5, wherein the light shielding layer is formed of a data line. 7. The light-shielding layer includes a capacitance line disposed between a data line and the thin film transistor, and the light absorption layer is disposed to face the capacitance line via a dielectric film and is provided for each pixel. 6. The electro-optical device according to claim 5, comprising a capacitance electrode divided into islands. 8. The light-shielding layer is connected to the thin-film transistor and extends in a first direction. The plurality of data lines is connected to the pixel electrode and extends in a second direction intersecting the first direction. The electro-optical device according to claim 5, comprising a plurality of capacitance lines. 9. The light-shielding layer includes one layer of a capacitor line having a multilayer structure disposed between a data line and the thin film transistor, and the light absorption layer includes the one layer of the capacitor line. 6. The electro-optical device according to claim 5, further comprising another layer closer to the thin film transistor than the thin film transistor. 10. The capacitor line is formed in a stripe shape extending in a direction intersecting the data line in an image display region, and is connected to a constant potential source in a peripheral region located around the image display region. The electro-optical device according to any one of claims 7 to 9, wherein 11. The capacitance line is connected to each other in the peripheral region, and a plurality of the capacitance lines are collectively connected to the constant potential source via one or more contacts. The electro-optical device according to claim 10. 12. The device according to claim 10, wherein the capacitance lines are connected to each other in the peripheral region, and are redundantly connected to the constant potential source via a plurality of contacts. An electro-optical device according to claim 1. 13. The light-emitting device according to claim 5, further comprising another light-shielding layer disposed below the thin-film transistor on the substrate and covering at least a channel region of the thin-film transistor. An electro-optical device according to claim 1. 14. The light-emitting device according to claim 1, further comprising another light-absorbing layer disposed between said other light-shielding layer and said thin-film transistor, said light-absorbing layer being mainly composed of a main material forming a channel region of said thin-film transistor. An electro-optical device according to claim 13. 15. The electro-optical device according to claim 1, wherein the light shielding layer is disposed below the thin film transistor on the substrate. 16. The light absorption layer according to claim 1, wherein the light absorption layer includes a portion including an intermediate conductive layer that relays the pixel electrode or data line to the thin film transistor. Electro-optical device. 17. The electro-optical device according to claim 1, wherein the light shielding layer has a higher thermal conductivity than the light absorbing layer. 18. The electro-optical device according to claim 17, wherein an interlayer distance between the thin film transistor and the light absorbing layer is larger than an interlayer distance between the light absorbing layer and the light shielding layer. 19. The light-shielding layer is laminated on the light-absorbing layer via an insulating film, and is formed to be slightly larger than the light-absorbing layer in plan view. 19. The electro-optical device according to any one of 18. 20. A pair of substrates, an electro-optical material formed between the pair of substrates, a pixel electrode formed on one of the pair of substrates, a thin film transistor connected to the pixel electrode, and the thin film transistor An electro-optical device, comprising: a first light-shielding layer covering at least a channel region of the first light-emitting layer; and a first light-absorbing layer facing the first light-shielding layer via the thin film transistor. 21. The electro-optical device according to claim 20, wherein the first light shielding layer is provided on a light incident side with respect to the thin film transistor. 22. The electro-optical device according to claim 20, further comprising a second light absorbing layer provided between the first light blocking layer and the thin film transistor. 23. The electro-optical device according to claim 20, further comprising a second light-shielding layer provided on a side of the first light-absorbing layer opposite to the thin-film transistor. . 24. The electro-optical device according to claim 23, wherein the second light shielding layer is formed in a region inside the first light absorbing layer. 25. The light-shielding device according to claim 2, wherein the second light-shielding film is formed in a region inside the first light-shielding film.
5. The electro-optical device according to 4. 26. A pair of substrates, an electro-optical material formed between the pair of substrates, a pixel electrode formed on one of the pair of substrates, a thin film transistor connected to the pixel electrode, and the thin film transistor An electro-optical device, comprising: a first light absorbing layer covering at least a channel region of the first light absorbing layer; and a second light absorbing layer facing the first light absorbing layer via the thin film transistor. 27. The electro-optical device according to claim 26, wherein a light-transmitting insulating film is interposed between the pixel electrode, the thin film transistor, and the first light absorbing layer. 28. A light source, a light valve comprising an electro-optical device according to any one of claims 1 to 27, a light guide member for guiding light emitted from the light source to the light valve, and modulation by the light valve. And a projection optical member for projecting the projected light. 29. A pixel electrode, comprising: a thin film transistor connected to the pixel electrode; a light-shielding layer covering at least a channel region of the thin-film transistor; and a light-absorbing layer disposed between the light-shielding layer and the thin-film transistor. An electro-optical device. 30. A semiconductor device comprising: a pixel electrode; a thin film transistor connected to the pixel electrode; a light blocking layer covering at least a channel region of the thin film transistor; and a light absorbing layer facing the light blocking layer via the thin film transistor. An electro-optical device characterized by the above-mentioned. 31. A pixel electrode, a thin film transistor connected to the pixel electrode, a first light absorbing layer covering at least a channel region of the thin film transistor, and a second light absorbing layer facing the first light absorbing layer via the thin film transistor. An electro-optical device comprising a light absorbing layer.