JP2002107763A5

JP2002107763A5 -

Info

Publication number: JP2002107763A5
Application number: JP2001138821A
Authority: JP
Filing date: 2001-05-09
Publication date: 2004-12-24
Anticipated expiration: 2021-05-09

Description

【発明の名称】電気光学装置及び投射型表示装置Patent application title: ELECTRO-OPTICAL DEVICE AND PROJECTION DISPLAY

【０００９】
【課題を解決するための手段】
（１）本発明の電気光学装置は上記課題を解決するために、前記一対の基板間に設けられた電気光学物質と、
前記一対の基板の一方に形成された画素電極と、
前記画素電極に対応して設けられた薄膜トランジスタと、
前記画素電極に対応して設けられた蓄積容量と、
前記蓄積容量の容量電極の内の下電極と上電極の少なくとも一方として設けられた光吸収層と、
を備える。
さらに本発明の電気光学装置によれば、前記薄膜トランジスタの少なくともチャネル領域を覆って、前記蓄積容量より上層に設けられた遮光層をさらに備える。
さらに本発明の電気光学装置によれば、前記遮光膜は、前記上電極の直上に設けられている。[0009]
[Means for Solving the Problems]
(1) In order to solve the above problems, the electro-optical device according to the present invention includes: an electro-optical material provided between the pair of substrates;
A pixel electrode formed on one of the pair of substrates,
A thin film transistor provided corresponding to the pixel electrode;
A storage capacitor provided corresponding to the pixel electrode;
A light absorption layer provided as at least one of a lower electrode and an upper electrode of the capacitance electrodes of the storage capacitor,
Is provided.
Further, according to the electro-optical device of the present invention, the electro-optical device further includes a light-shielding layer provided above the storage capacitor so as to cover at least a channel region of the thin-film transistor.
Further, according to the electro-optical device of the present invention, the light-shielding film is provided immediately above the upper electrode.

【００１８】
（３）本発明の電気光学装置の他の態様では、前記光吸収層は、導体化したシリコン膜からなる。[0018]
(3) In another aspect of the electro-optical device according to the invention, the light absorption layer is made of a conductive silicon film.

【００２６】
本発明の電気光学装置は、前記光吸収層の少なくとも一層は、前記蓄積容量における容量線の側の層からなる。
本発明の電気光学装置の他の態様では、前記遮光層は、容量線からなり、前記光吸収層の少なくとも一層は、画素毎に島状に分断された容量電極からなる。
（７）前記遮光膜が上側に配置された態様では、前記遮光層は、データ線と前記薄膜トランジスタとの間に配置された容量線からなり、前記光吸収層は、前記容量線に誘電体膜を介して対向配置され且つ画素毎に島状に分断された容量電極からなってもよい。[0026]
In the electro-optical device according to the aspect of the invention, at least one of the light absorbing layers may be a layer on the storage capacitor side on a capacitance line side.
In another aspect of the electro-optical device of the present invention, the light-shielding layer is formed of a capacitance line, and at least one of the light absorption layers is formed of a capacitance electrode divided into pixels for each pixel.
(7) In the aspect in which the light-shielding film is disposed on the upper side, the light-shielding layer includes a capacitance line disposed between a data line and the thin film transistor, and the light-absorbing layer includes a dielectric film on the capacitance line. , And may be composed of capacitance electrodes that are arranged to face each other and are divided into islands for each pixel.

Claims

A pair of substrates,
An electro-optical material provided between the pair of substrates,
A pixel electrode formed on one of the pair of substrates,
A thin film transistor provided corresponding to the pixel electrode;
A storage capacitor provided corresponding to the pixel electrode;
A light absorption layer provided as at least one of a lower electrode and an upper electrode of the capacitance electrodes of the storage capacitor,
An electro-optical device comprising:

The electro-optical device according to claim 1, wherein the light absorbing layer is mainly made of a main material forming a channel region of the thin film transistor.

The electro-optical device according to claim 1, wherein the light absorption layer is made of a conductive silicon film.

4. The electro-optical device according to claim 1, further comprising a light-shielding layer provided above the storage capacitor so as to cover at least a channel region of the thin-film transistor. 5.

The electro-optical device according to claim 4, wherein the light-shielding layer is provided immediately above the upper electrode.

The electro-optical device according to claim 4, wherein the light-shielding layer is formed of a film containing a metal.

The electro-optical device according to claim 1, wherein one of the light absorption layers is formed of an electrode on a side of a capacitance line in the storage capacitor.

The capacitance line is formed in a stripe shape extending in a direction intersecting the data line in the image display region, and is connected to a constant potential source in a peripheral region located around the image display region. The electro-optical device according to claim 7, wherein

9. The electric device according to claim 8, wherein the plurality of capacitance lines are connected to each other in the peripheral region, and are connected to the constant potential source via a single contact or a plurality of contacts. Optical device.

The electro-optical device according to claim 9, wherein the capacitance lines are connected to each other in the peripheral region, and are redundantly connected to the constant potential source via a plurality of contacts. .

The light shielding layer is made of a capacitance line,
The electro-optical device according to any one of claims 7 to 10, wherein the other of the light absorbing layers includes a capacitor electrode divided into islands for each pixel.

The light shielding layer,
A plurality of data lines connected to the thin film transistor and each extending in a first direction;
The electro-optical device according to claim 4, further comprising a plurality of capacitance lines connected to the pixel electrode and extending in a second direction that intersects with the first direction.

The electro-optical device according to any one of claims 1 to 12, further comprising another light-blocking layer disposed below the thin film transistor on the substrate and covering at least a channel region of the thin film transistor. .

14. The light-emitting device according to claim 13, further comprising another light-absorbing layer disposed between the another light-shielding layer and the thin-film transistor, the light-absorbing layer being mainly composed of a main material forming a channel region of the thin-film transistor. Electro-optical device.

The electro-optical device according to claim 4, wherein the light-shielding layer has a higher thermal conductivity than the light-absorbing layer.

The electro-optical device according to claim 15, wherein an interlayer distance between the thin film transistor and the light absorbing layer is larger than an interlayer distance between the light absorbing layer and the light shielding layer.

18. The light-shielding layer according to claim 4, wherein the light-shielding layer is stacked on the light-absorbing layer via an insulating film and is slightly larger than the light-absorbing layer when viewed two-dimensionally. An electro-optical device according to the item.

A light source,
A light valve comprising an electro-optical device according to any one of claims 1 to 17,
A light guide member that guides light emitted from the light source to the light valve,
A projection optical member for projecting light modulated by the light valve.