JP2001265253A5

JP2001265253A5 -

Info

Publication number: JP2001265253A5
Application number: JP2000077177A
Authority: JP
Filing date: 2000-03-17
Publication date: 2004-12-16
Anticipated expiration: 2020-03-17

Description

【発明の名称】電気光学装置およびプロジェクタPatent application title: ELECTRO-OPTICAL DEVICE AND PROJECTOR

Claims

On the substrate,
A thin film transistor;
A pixel electrode;
An intermediate conductive layer that relay-connects the pixel electrode and a semiconductor layer forming the thin film transistor;
A scanning line connected to the thin film transistor;
A data line crossing the scanning line and connected to the thin film transistor;
A second capacitor electrode opposed to a first capacitor electrode made of the same layer as the semiconductor layer via an insulating thin film;
An electro-optical device, comprising: a first capacitor line formed of the same film as the intermediate conductive layer and connected to the second capacitor electrode.

The electro-optical device according to claim 1, wherein the second capacitance electrode and the scanning line are made of the same conductive film.

A first interlayer insulating film is formed between the first capacitance line and the second capacitance electrode,
3. The device according to claim 1, wherein the first capacitance line and the second capacitance electrode are connected to each other through a contact hole formed in the first interlayer insulating film for each of the pixel electrodes. 4. An electro-optical device according to claim 1.

A first interlayer insulating film is formed between the first capacitance line and the second capacitance electrode,
3. The device according to claim 1, wherein the first capacitance line and the second capacitance electrode are connected to each other through a contact hole formed in the first interlayer insulating film for each of a plurality of pixel electrodes. An electro-optical device according to claim 1.

The intermediate conductive layer and the first capacitance line are formed at a stacked position above the scanning line via the first interlayer insulating film and below the data line via a second interlayer insulating film. The electro-optical device according to any one of claims 1 to 4, wherein:

The first capacitance line is at least partially overlapped with the scanning line when viewed in plan, and extends from the image display area where the pixel electrode is arranged along the scanning line to the periphery thereof. The electro-optical device according to any one of claims 1 to 5 , wherein:

The first capacitance line is at least partially overlapped with the second capacitance electrode when seen in a plan view, and extends from the image display area to the periphery thereof along the scanning line direction. The electro-optical device according to any one of claims 1 to 6 , wherein

The intermediate conductive layer and the first capacitance line are formed of a light-shielding conductive film,
Wherein the first capacitor line, an electro-optical device according to any one of claims 1 to 7, characterized in that in plan view to cover at least the channel region of the semiconductor layer.

The intermediate conductive layer, an electro-optical device according to any one of claims 1, characterized in that a multilayer film 8.

The electro-optical device according to any one of claims 1 to 9 , wherein the first interlayer insulating film has a thickness of 500 nm or more.

The first interlayer insulating film has a thickness of 500 nm or less, and the first capacitance line does not overlap at least a channel region of the semiconductor layer and a region adjacent to the channel region in plan view. the electro-optical device according to any one of claims 1 to 9.

And a third capacitance electrode formed of the same film as the intermediate conductive layer and the first capacitance line and opposed to the capacitance line via the first interlayer insulating film on the substrate. the electro-optical device according to any one of claims 1 to 11.

The second capacitance electrode includes a second capacitance line extending from the image display area to a periphery thereof along the scanning line, and the second capacitance line is connected to the first capacitance line. the electro-optical device according to claim 1, any one of 12, wherein the.

On the substrate, at least an electro-optical device according to the channel region of the semiconductor layer in any one of claims 1 to 13, further comprising a light shielding film covering viewed from the substrate side.

The light shielding film, which is connected to the first capacitor line for each pixel electrode, said extending therearound from the image display area from claim 1 characterized by comprising connected to the constant potential source 14 The electro-optical device according to claim 1.

A projector comprising the electro-optical device according to claim 1.