JP2002215064A - Optoelectronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To display a bright and high-quality picture by enhancing light resistance in an optoelectronic device such as liquid crystal device. SOLUTION: This optoelectronic device is provided with a pixel electrode (9a) and a TFT(thin film transistor) (30) which is connected to the pixel electrode and a scanning line (3a) which is connected to the TFT and a built-in light shielding films (300, 6a) which covers at least a channel region from the upper side, on a TFT array substrate (10). The scanning line extends in a direction intersecting the longitudinal direction of the channel region of the TFT and has a main body part which includes the gate electrode of the TFT which is overlapped on the channel region when it is seen as a plane and encirclement parts (3b) which are extended and provided so as to encircle the semiconductor layer of the TFT from the main line part of the scanning line at places where are separated by a prescribed distance in a direction along the scanning line from the channel region. Moreover, the scanning line has projecting parts projected to the substrate side.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of an electro-optical device of an active matrix drive system, and particularly to a thin film transistor for pixel switching (Thin Film Tran).
(hereinafter, appropriately referred to as a TFT) in a laminated structure on a substrate.

[0002]

2. Description of the Related Art In an electro-optical device of a TFT active matrix drive type, when incident light is applied to a channel region of a pixel switching TFT provided in each pixel, light leakage current is generated by excitation by light, and characteristics of the TFT are increased. Changes. In particular, in the case of an electro-optical device for a light valve of a projector, since the intensity of incident light is high, it is important to shield the TFT channel region and its peripheral region from incident light. Therefore, conventionally, a light shielding film that defines an opening area of each pixel provided on the opposite substrate or a TF
After passing over the TFT on the T array substrate, A
The channel region and its peripheral region are shielded from light by a data line made of a metal film such as l (aluminum). Further, a light-shielding film made of, for example, a refractory metal may be provided at a position on the TFT array substrate facing the lower side of the TFT. If a light-shielding film is provided below the TFT as described above, the reflected light from the back side of the TFT array substrate or a combination of a plurality of electro-optical devices via a prism or the like constitutes another optical system. Return light, such as projection light, which passes through a prism or the like from the electro-optical device described above, can be prevented from entering the TFT of the electro-optical device.

[0003]

However, the above-described various light-shielding techniques have the following problems.

That is, according to the technique of forming a light-shielding film on a counter substrate or a TFT array substrate, the space between the light-shielding film and the channel region is three-dimensionally viewed, for example, as a liquid crystal layer, an electrode, or an interlayer insulating film. And so on, so that the light obliquely incident between them is not sufficiently shielded. In particular, in a small electro-optical device used as a light valve of a projector, the incident light is a light beam obtained by focusing light from a light source with a lens, and a component obliquely incident cannot be ignored (for example, a light perpendicular to a substrate). (About 10% of a component tilted by about 10 to 15 degrees from a certain direction), and it is a practical problem that such oblique incident light is not sufficiently shielded.

In addition, light that has entered the electro-optical device from a region having no light-shielding film, or light that has been reflected and returned after passing through the electro-optical device once is formed on the upper surface of the substrate or the upper surface of the substrate. After being reflected on the upper surface of the light-shielding film or the lower surface of the data line (that is, the inner surface on the side facing the channel region), the reflected light or the reflected light is further reflected on the upper surface of the substrate or the light-shielding film or the inner surface of the data line. The light may eventually reach the channel region of the TFT.

In particular, as the electro-optical device has been improved in definition or the pixel pitch has been reduced to meet the recent general demand for higher quality display images, the light intensity of incident light has been increased to display brighter images. According to the conventional various light-shielding technologies described above, it becomes more difficult to perform sufficient light-shielding, and flicker occurs due to a change in the transistor characteristics of the TFT, thereby deteriorating the quality of a displayed image. There is a problem that it is.

Incidentally, in order to improve such light resistance,
It is thought that the area for forming the light-shielding film may be expanded, but if the area for forming the light-shielding film is expanded, it is fundamentally necessary to increase the aperture ratio of each pixel in order to improve the brightness of the display image. The problem that it becomes difficult arises. In addition, as described above, the T
Considering that the presence of the light-shielding film on the upper side of the FT causes internal reflection and multiple reflected light due to oblique light, if the area where the light-shielding film is formed is expanded unnecessarily, such internal reflection light and multiple light There is also a difficult problem to be solved that causes an increase in reflected light.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide an electro-optical device which is excellent in light resistance and capable of displaying a bright and high-quality image.

[0009]

In order to solve the above-mentioned problems, a first electro-optical device according to the present invention includes a pixel electrode on a substrate, a first electrode connected to the pixel electrode, including a channel region and a first electrode. A thin film transistor having a semiconductor layer extending longitudinally in a direction, a scan line connected to the thin film transistor, and a built-in light-shielding film covering at least the channel region from above, and the scan line has a gate in the channel region. A main line portion including a gate electrode of the thin film transistor which is opposed to the thin film transistor via an insulating film and extending in a second direction intersecting with the first direction in plan view, and An enclosing portion extending so as to surround the semiconductor layer from the main line portion at a position deviated by a predetermined distance in the second direction.

According to the first electro-optical device of the present invention, the pixel electrode is switched by the thin film transistor connected thereto, so that the driving by the active matrix driving method can be performed. Then, the built-in light shielding film covers at least the channel region from above. Further, the scanning line has an enclosing portion extending so as to surround the semiconductor layer from the main line portion at a position deviated by a predetermined distance in the second direction from the channel region when viewed in plan. Therefore, incident light and return light that proceed obliquely with respect to the substrate surface, and oblique light such as internal reflected light and multiple reflected light based on these light incident on the channel region and the channel adjacent region are prevented from being scanned. The light can be at least partially blocked not only by the main body including the gate electrode but also by light absorption or light reflection by the surrounding part. In this case, in particular, light is shielded by a surrounding portion disposed at a position where the interlayer distance from the channel region or the channel adjacent region is very small (that is, an interlayer position generally separated by the thickness of the gate insulating film). By blocking light inclined in any direction, the light can be blocked very effectively.

As a result, according to the first electro-optical device of the present invention, the light resistance can be improved, and the light leakage current can be increased even under severe conditions where strong incident light or return light is incident. The pixel electrode can be satisfactorily switched and controlled by the thin film transistor with reduced number of pixels, and finally, a bright and high-contrast image can be displayed by the present invention.

In view of such technical effects, in the present invention, "surrounding the semiconductor layer in a plan view" means that the surrounding portion extends continuously around the semiconductor layer in a plan view. In addition to the meaning of forming, as long as the light from the lower side of the channel region is shielded (reflected or absorbed) to some extent around the semiconductor layer in a plan view, there is a slight break around the semiconductor layer or This is a broad meaning including the case where the surrounding portions are formed intermittently or the surrounding portions are scattered in an island shape.

In one embodiment of the first electro-optical device of the present invention,
The surrounding portion includes a first surrounding portion surrounding the source region of the semiconductor layer when viewed in plan, and a second surrounding portion surrounding the drain region of the semiconductor layer in plan view.

According to this aspect, the main line portion of the scanning line is located immediately above the channel region, and the light shielding by the first surrounding portion is performed on the source region side, and the light shielding by the second surrounding portion is performed on the drain region side. Is performed. Therefore, a relatively wide area centered on the channel region from the source region to the drain region via the channel region in the semiconductor layer can be covered with the surrounding portion. As a result, light traveling obliquely from any direction with respect to the substrate surface (ie, obliquely incident light, return light, internally reflected light, multiple reflected light, etc.) enters the channel region and the channel adjacent region. Can be at least partially prevented by light absorption or light reflection by the first and second surrounding portions.

In another aspect of the first electro-optical device of the present invention, a part of a source region and a part of a drain region of the semiconductor layer are each a contact hole opening region, and the surrounding portion is Surrounding the semiconductor layer including the contact hole opening region.

According to this aspect, the source region and the drain region of the semiconductor layer can be connected to, for example, a data line, a pixel electrode, a storage capacitor, or a relay wiring or a relay layer leading to them, via a contact hole. In this case, in particular, the surrounding portion can improve the light shielding performance around the contact hole opening region. Therefore, even if the contact hole is provided, highly reliable light shielding can be performed.

In this aspect, at least one of the source region and the drain region may be formed to have the same width as the width of the channel region including the contact hole opening region.

According to this structure, the source region and the drain region having the same width as the channel region including the contact hole opening region are surrounded by a rectangular shape at a relatively close position in plan view. It can be covered with gully by the part.

In another aspect of the first electro-optical device according to the present invention, the substrate further comprises a lower light-shielding film covering at least the channel region from below on the substrate.

According to this aspect, it is possible to obtain a configuration in which a channel adjacent region or a channel region is sandwiched between the lower light-shielding film having a relatively small interlayer distance and the surrounding portion or main body of the scanning line functioning as a light-shielding film. Can be Therefore, extremely high light-shielding performance can be obtained with respect to oblique light inclined in any direction.

In another aspect of the first electro-optical device of the present invention, the scanning line protrudes in a direction perpendicular to the substrate from the main line portion at a position deviated from the channel region by a predetermined distance in the second direction. It further has a projected portion.

According to this aspect, since the main line portion includes the protruding portion projecting in the vertical direction of the substrate, the channel region can be covered three-dimensionally by the main line portion including the protruding portion, thereby further improving the light shielding performance. Enhanced. In particular, in the case of a so-called top gate type where the scanning line is located above the channel region,
A configuration in which the channel region is three-dimensionally covered from above is obtained by the main line portion including the protruding portion.

The predetermined distance for the surrounding part and the predetermined distance for the protruding part may be the same or different.

In the aspect having the protruding portion, the scanning line may further include a protruding portion protruding from the surrounding portion in a vertical direction of the substrate.

According to this structure, the channel region can be three-dimensionally covered by the projecting portion of the main line portion and the projecting portion of the surrounding portion, and the light shielding performance can be further enhanced. In particular, in the case of a so-called top gate type in which the scanning line is located above the channel region, a configuration is obtained in which the channel region is three-dimensionally covered from above by the main line portion including the protruding portions and the surrounding portion. In addition, these protrusion parts may protrude continuously, and may protrude separately.

In the aspect having the protruding portion, a lower light-shielding film that covers at least the channel region from below is further provided on the substrate. You may comprise so that it may contact.

According to this structure, the channel adjacent region or the channel region is sandwiched between the lower light-shielding film having a relatively small interlayer distance and the surrounding portion or main body of the scanning line functioning as the light-shielding film. can get. In addition, the space between the lower light-shielding film and the surrounding portion of the scanning line and the main body where the channel adjacent region or the channel region exists is a space at least partially closed by the protruding portion. Therefore, extremely high light-shielding performance can be obtained with respect to oblique light inclined in any direction.

Alternatively, in the aspect having the projection, the substrate further includes a lower light-shielding film that covers at least the channel region from below, and the projection is in contact with the lower light-shielding film. It may be configured not to.

According to this structure, the channel adjacent region or the channel region is sandwiched between the lower light-shielding film having a relatively small interlayer distance and the surrounding portion or main body of the scanning line functioning as the light-shielding film. can get. In addition, the space between the lower light-shielding film and the surrounding portion of the scanning line and the main body where the channel adjacent region or the channel region exists is a space partially closed by the protruding portion. Therefore, extremely high light-shielding performance can be obtained with respect to oblique light inclined in any direction.

In the case where the configuration in which the lower light-shielding film is not brought into contact with the scanning line is employed, the adverse effect due to the potential fluctuation of the lower light-shielding film (for example, irrespective of the conductivity of the lower light-shielding film). And adverse effects on the thin film transistor) can be prevented.

In another aspect of the first electro-optical device of the present invention, in plan view, the upper light-shielding film has a larger outline than the lower light-shielding film, and the lower light-shielding film has a larger outline than the surrounding portion. large.

According to this aspect, the contour of the upper light-shielding film is larger than that of the lower light-shielding film.
The component reflected by the upper surface of the lower light-shielding film passing through the side of the upper light-shielding film can be reduced. That is, the internal reflected light or the multiple reflected light composed of incident light from above can be reduced as much as possible. On the other hand, since the lower light-shielding film has a contour larger than that of the surrounding portion, components of light incident from below that pass through the lower light-shielding film and enter the surrounding portion can be reduced as much as possible. Then, of the light incident from below, components that pass through the lower light-shielding film and are reflected by the lower surface of the upper light-shielding film (that is, internal reflected light or multiple reflected light composed of return light) are reduced by the surrounding portion. it can. Therefore, ultimately, the light shielding performance can be greatly improved.

In order to solve the above-mentioned problems, a second electro-optical device according to the present invention includes a pixel electrode on a substrate, which is connected to the pixel electrode, includes a channel region, and extends longitudinally in a first direction. A thin film transistor having a semiconductor layer, a scan line connected to the thin film transistor, and a built-in light-shielding film covering at least the channel region from above, wherein the scan line faces the channel region via a gate insulating film. A main line portion including a gate electrode of the thin film transistor arranged and extending in a second direction intersecting the first direction as viewed in plan, and having a predetermined distance in the second direction from the channel region in plan view And a protruding portion that protrudes downward from the main line portion at a position deviated from the main line portion.

According to the second electro-optical device of the present invention, the pixel electrode is switched by the thin film transistor connected thereto, so that the driving by the active matrix driving method can be performed. Then, the built-in light shielding film covers at least the channel region from above. Further, the scanning line has a protruding portion that protrudes downward from the main line portion at a position deviated from the channel region by a predetermined distance in the second direction when viewed in plan. Therefore, incident light and return light that proceed obliquely with respect to the substrate surface, and oblique light such as internal reflected light and multiple reflected light based on these light incident on the channel region and the channel adjacent region are prevented from being scanned. The light can be at least partially blocked not only by the main body including the gate electrode but also by light absorption or light reflection particularly by the protrusion. In this case, in particular, since the main line portion and the protruding portion three-dimensionally shield the channel region and the channel adjacent region at positions close to the channel region and the channel adjacent region, the light shielding can be performed very effectively.

As a result, according to the second electro-optical device of the present invention, the light resistance can be improved, and the light leakage current can be increased even under severe conditions where strong incident light or return light is incident. The pixel electrode can be satisfactorily switched and controlled by the thin film transistor with reduced number of pixels, and finally, a bright and high-contrast image can be displayed by the present invention.

In one embodiment of the second electro-optical device according to the present invention,
The protrusion is formed in a groove dug in an interlayer insulating film located below the scanning line.

According to this aspect, the protruding portion can be easily formed by forming a scanning line by digging a groove in the interlayer insulating film at a position where the protruding portion is to be provided and then laminating a conductive film.

In another aspect of the second electro-optical device of the present invention, the substrate further comprises a lower light-shielding film covering at least the channel region from below, on the substrate,
The tip side may be configured to be in contact with the lower light-shielding film.

According to this structure, a channel adjacent region or a channel region can be obtained between the lower light-shielding film having a relatively small interlayer distance and the main body of the scanning line functioning as a light-shielding film. In addition, the space between the lower light-shielding film and the main body of the scanning line, in which the channel adjacent region or the channel region exists, is a space at least partially closed by the protrusion. Therefore, extremely high light-shielding performance can be obtained with respect to oblique light inclined in any direction.

In this embodiment, the lower light-shielding film may be formed of a conductive film and formed in a stripe shape extending along the scanning line.

With this configuration, the lower light-shielding film can be used as a redundant wiring for the scanning line. As a result, it is possible to reduce the resistance of the scanning line, and it is possible to effectively prevent the device from being defective even if the scanning line is partially disconnected.

Alternatively, in this aspect, the lower light-shielding film may be formed in a lattice shape including an insulating film and a portion extending along the scanning line and a portion extending crossing the scanning line.

With this configuration, since the lower light-shielding film is made of an insulating film, it is possible to prevent an adverse effect (for example, an adverse effect on the thin-film transistor) due to a potential change of the lower light-shielding film. The lattice-shaped lower light-shielding film can further enhance the light-shielding performance both in the direction along the scanning line and in the direction intersecting the scanning line.

In another aspect of the second electro-optical device of the present invention, the substrate further comprises a lower light-shielding film that covers at least the channel region from below, on the substrate,
You may comprise so that it may not contact the said lower side light shielding film.

According to this structure, a channel adjacent region or a channel region can be obtained between the lower light-shielding film having a relatively small interlayer distance and the main body of the scanning line functioning as the light-shielding film. In addition, the space between the lower light-shielding film and the main body of the scanning line, in which the channel adjacent region and the channel region exist, is a space partially closed by the protrusion. Therefore, extremely high light-shielding performance can be obtained with respect to oblique light inclined in any direction.

In the case of employing such a configuration in which the lower light-shielding film and the scanning line are not in contact with each other, an adverse effect due to a potential change of the lower light-shielding film (for example, irrespective of the conductivity of the lower light-shielding film). And adverse effects on the thin film transistor) can be prevented. At this time, the lower light-shielding film may have a lattice shape or a stripe shape.

In another aspect of the first or second electro-optical device of the present invention, the scanning line is formed of a laminate including a light absorbing layer and a light shielding layer.

According to this aspect, it is possible to enhance the light shielding performance by the main line portion and the protruding portion without substantially lowering the gate electrode or the original function of the scanning line by the scanning line formed of the laminated body.

In this embodiment, the light absorption layer may be formed of a conductive polysilicon film, and the light shielding layer may be formed of a conductive metal film containing a high melting point metal.

According to this structure, the gate electrode can be satisfactorily functioned by the conductive polysilicon film in the scanning line composed of the stacked body. On the other hand, the conductive polysilicon film and the conductive metal film among the scan lines formed of the stacked body enable the scan lines to function well as wiring. At the same time, the light shielding performance can be enhanced by the scanning lines formed of the laminate.

In order to solve the above-mentioned problems, a third electro-optical device according to the present invention includes a pixel electrode on a substrate, which is connected to the pixel electrode, includes a channel region, and extends longitudinally in the first direction. A second direction that includes a thin film transistor having a semiconductor layer, and a gate electrode of the thin film transistor that is opposed to the channel region of the semiconductor layer of the thin film transistor via a gate insulating film, and that intersects the first direction when viewed in plan And a light-shielding portion extending so as to surround the semiconductor layer from a position deviated from the channel region by a predetermined distance in the second direction when viewed in plan.

According to the third electro-optical device of the present invention, by performing switching control of the pixel electrode by the thin film transistor connected to the pixel electrode, driving by the active matrix driving method can be performed. Then, from a place deviated by a predetermined distance from the channel region in the second direction when viewed in a plane,
Since it has a light-shielding portion extending so as to surround the semiconductor layer, incident light and return light traveling obliquely to the substrate surface,
In addition, oblique light such as internally reflected light and multiple reflected light based on the light can be at least partially prevented from entering the channel region and the channel adjacent region, particularly by light absorption or light reflection by the light shielding portion. In this case, in particular, light is shielded by a light-shielding portion disposed at a position where the interlayer distance from the channel region or the channel adjacent region is extremely small, and light-shielded by the light-shielding portion is shielded in any direction. Thereby, the light shielding can be performed very effectively.

As a result, according to the third electro-optical device of the present invention, the light resistance can be improved, and the light leakage current can be increased even under severe conditions where strong incident light or return light is incident. The pixel electrode can be satisfactorily switched and controlled by the thin film transistor with reduced number of pixels, and finally, a bright and high-contrast image can be displayed by the present invention.

In the present invention, the various aspects of the first electro-optical device described above, the various aspects of the second electro-optical device described above, and the above-described third electro-optical device may be arbitrarily combined. Good.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0056]

Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, the electro-optical device according to the invention is applied to a liquid crystal device.

(First Embodiment) First, a configuration of a pixel portion of an electro-optical device according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of the electro-optical device. FIG. 2 is a plan view of a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed. FIG. 3 is a sectional view taken along line AA ′ of FIG. still,
In FIG. 3, the scale of each layer and each member is different for each layer and each member in order to make each layer and each member a size that can be recognized in the drawing.

In FIG. 1, each of a plurality of pixels formed in a matrix forming an image display area of the electro-optical device according to the present embodiment has a pixel electrode 9a and a TFT 30 for controlling the switching of the pixel electrode 9a. Are formed, and the data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. good. The scanning line 3 is connected to the gate of the TFT 30.
a is electrically connected to the scanning line 3a at predetermined timings in a pulsed manner with the scanning signals G1, G2,.
Are applied in this order in a line-sequential manner.
The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30 as a switching element for a certain period, the data line 6 is turned off.
The image signals S1, S2,..., Sn supplied from a are written at a predetermined timing. The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a are held for a certain period between the image signals S1, S2,. You. The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. In the normally white mode, the transmittance for the incident light decreases according to the voltage applied in each pixel unit. In the normally black mode, the light enters according to the voltage applied in each pixel unit. Light transmittance is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole. Here, in order to prevent the held image signal from leaking, the pixel electrode 9a
A storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the capacitor and the counter electrode.

In FIG. 2, a plurality of transparent pixel electrodes 9 are arranged in a matrix on a TFT array substrate of the electro-optical device.
a (the outline is indicated by a dotted line portion 9a '), and the data line 6a and the scanning line 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a, respectively.

Further, the scanning line 3a is arranged so as to face the channel region 1a 'indicated by the hatched region in the semiconductor layer 1a which rises to the right in the figure, and the scanning line 3a functions as a gate electrode.

In particular, in the present embodiment, the scanning lines 3a extend from the main lines extending linearly to the left and right in the figure so that each TFT 30 surrounds the periphery of the semiconductor layer 1a including the channel region 1a '. An enclosing portion 3b extends from the source side (below each TFT in FIG. 2) and the drain side (above each TFT 30 in FIG. 2). That is, in the present embodiment, a part of the scanning line 3a is extended as the surrounding part 3b. Regarding the configuration and operational effects of the surrounding portion 3b,
This will be described later in detail with reference to FIGS.

As described above, at the intersections of the scanning lines 3a and the data lines 6a, the pixel switching TFTs 30 each having the main line portion of the scanning line 3a opposed to each other as a gate electrode in the channel region 1a 'are provided. ing.

As shown in FIG. 2 and FIG.
Is a relay layer 7 serving as a pixel potential side capacitance electrode connected to the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a.
1 and a part of the capacitance line 300 as a fixed potential side capacitance electrode are formed by being opposed to each other via a dielectric film 75.

The capacitance line 300 is made of a conductive light-shielding film containing a metal or an alloy, for example, and constitutes an example of an upper light-shielding film (built-in light-shielding film) and also functions as a fixed-potential-side capacitance electrode. The capacitance line 300 is made of, for example, Ti (titanium), Cr
(Chrome), W (tungsten), Ta (tantalum),
It is made of a single metal, an alloy, a metal silicide, a polysilicide, or a laminate of any of these, including at least one of high-melting metals such as Mo (molybdenum) and Pb (lead). However, the capacitance line 300 may have a multilayer structure in which, for example, a first film made of a conductive polysilicon film or the like and a second film made of a metal silicide film containing a refractory metal are stacked.

The relay layer 71 is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode. The relay layer 71 has a function as a light absorption layer disposed between the capacitor line 300 as the upper light shielding film and the TFT 30 in addition to the function as the pixel potential side capacitor electrode.
has a function of relay-connecting a with the high-concentration drain region 1e of the TFT 30. However, the relay layer 71 may be formed of a single-layer film or a multilayer film containing a metal or an alloy, similarly to the capacitance line 300.

When viewed in plan, the capacitance line 300 is
The portion overlapping the TFT 30 protrudes vertically in FIG. The data lines 6a extending in the vertical direction in FIG. 2 and the capacitance lines 300 extending in the horizontal direction in FIG. 2 are formed so as to intersect with each other. An upper light-shielding film (built-in light-shielding film) is formed in a lattice shape when viewed, and defines an opening area of each pixel.

As shown in FIGS. 2 and 3, below the TFT 30 on the TFT array substrate 10, a lower light-shielding film 11a is provided in a lattice pattern.

As described above, the lower light-shielding film 11a is formed of, for example, T
It is composed of a single metal, an alloy, a metal silicide, a polysilicide, or a laminate of any of these, including at least one of refractory metals such as i, Cr, W, Ta, Mo, and Pb.

In FIG. 3, a dielectric film 75 disposed between a relay layer 71 as a capacitor electrode and a capacitor line 300 is provided.
Is a relatively thin HTO having a thickness of, for example, about 5 to 200 nm.
(High Temperature Oxide) film, LTO (Low Temperat)
ure oxide film) or a silicon nitride film. From the viewpoint of increasing the storage capacitance 70, as long as the reliability of the film is sufficiently obtained,
The thinner the dielectric film 75, the better.

The capacitance line 300 extends from the image display area where the pixel electrode 9a is arranged to the periphery thereof, is electrically connected to a constant potential source, and has a fixed potential. As such a constant potential source, a scanning line driving circuit for supplying a scanning signal for driving the TFT 30 to the scanning line 3a and a sampling circuit for supplying an image signal to the data line 6a which will be described later. A constant potential source such as a positive power supply or a negative power supply supplied to the circuit may be used.
May be supplied to the constant potential. Further, the lower light shielding film 1
In order to prevent the potential fluctuation from adversely affecting the TFT 30, it is preferable to extend the pixel 1 a from the image display area to the periphery thereof and connect it to the constant potential source, similarly to the capacitor line 300.

The pixel electrode 9a is electrically connected to the high-concentration drain region 1e of the semiconductor layer 1a via the contact holes 83 and 85 by relaying the relay layer 71. That is, in the present embodiment, in addition to the function of the storage capacitor 70 as the pixel potential side capacitor electrode and the function as the light absorption layer, the relay layer 71 sets the pixel electrode 9a to the TFT 30.
Performs the function of relay connection to By using the relay layer 71 in this way, even if the interlayer distance is long, for example, about 2000 nm, two or more series having relatively small diameters can be connected while avoiding the technical difficulty of connecting them with one contact hole. The contact hole can provide a good connection between the two, increasing the pixel aperture ratio, and also helping to prevent etching penetration when the contact hole is opened.

In FIG. 2 and FIG. 3, the electro-optical device is
The device includes a transparent TFT array substrate 10 and a transparent opposing substrate 20 disposed opposite to the TFT array substrate 10. The TFT array substrate 10 is made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate.

As shown in FIG. 3, the TFT array substrate 10
Is provided with a pixel electrode 9a, and above it,
Alignment film 16 that has been subjected to a predetermined alignment treatment such as a rubbing treatment
Is provided. The pixel electrode 9a is made of, for example, ITO (In
It is composed of a transparent conductive film such as a dium tin oxide film. The alignment film 16 is made of, for example, an organic film such as a polyimide film.

On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode 21. I have. The counter electrode 21 is made of, for example, a transparent conductive film such as an ITO film. The alignment film 22 is made of an organic film such as a polyimide film.

The opposing substrate 20 may be provided with a lattice-shaped or stripe-shaped light-shielding film. By adopting such a configuration, as described above, the light shielding film on the opposite substrate 20 together with the capacitance line 300 and the data line 6a constituting the upper light shielding film allows the incident light from the opposite substrate 20 side to be transmitted to the channel region 1a 'and the like. Intrusion into the low-concentration source region 1b and the low-concentration drain region 1c can be more reliably prevented. Furthermore,
Such a light-shielding film on the counter substrate 20 is formed by forming at least the surface irradiated with incident light with a highly reflective film.
It functions to prevent the temperature of the electro-optical device from rising. Note that the light-shielding film on the counter substrate 20 is preferably formed so as to be located inside the light-shielding layer including the capacitor lines 300 and the data lines 6a in plan view. Thereby, the opposing substrate 20
By the upper light shielding film, without lowering the aperture ratio of each pixel,
Such effects of light shielding and temperature rise prevention can be obtained.

The space between the TFT array substrate 10 and the opposing substrate 20 having the pixel electrode 9a and the opposing electrode 21 arranged in such a manner as to face each other is provided in a space surrounded by a sealing material described later. Liquid crystal, which is an example of an electro-optical material, is sealed, and a liquid crystal layer 50 is formed. The liquid crystal layer 50 holds the alignment film 1 in a state where no electric field is applied from the pixel electrode 9a.
A predetermined orientation state is taken by 6 and 22. Liquid crystal layer 50
Is composed of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed. The sealing material is used for bonding the TFT array substrate 10 and the opposing substrate 20 around them.
For example, it is an adhesive made of a photo-curing resin or a thermosetting resin, and a gap material such as glass fiber or glass beads for mixing the two substrates at a predetermined distance is mixed.

Further, under the pixel switching TFT 30, a base insulating film 12 is provided. Base insulating film 1
2 has a function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, and is formed on the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 can be roughened during polishing or stains remaining after cleaning. T for pixel switching
It has a function of preventing deterioration of the characteristics of the FT 30.

In FIG. 3, the pixel switching TFT
Reference numeral 30 denotes an LDD (Lightly Doped Drain) structure, and includes a scanning line 3a and a channel region 1 of a semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a.
a ', an insulating film 2 including a gate insulating film for insulating the scanning line 3a from the semiconductor layer 1a, a low-concentration source region 1b and a low-concentration drain region 1c of the semiconductor layer 1a, a high-concentration source region 1d of the semiconductor layer 1a, and a high-concentration source region. It has a concentration drain region 1e.

On the scanning line 3a, a high concentration source region 1d
A first interlayer insulating film 41 is formed in which a contact hole 81 leading to the contact hole 81 and a contact hole 83 leading to the high concentration drain region 1e are respectively opened.

A relay layer 71 and a capacitor line 300 are formed on the first interlayer insulating film 41, and a contact hole 81 and a contact hole 85 communicating with the high-concentration source region 1d and the relay layer 71 are formed thereon. Are formed, and a second interlayer insulating film 42 is formed.

In this embodiment, the first interlayer insulating film 41
By sintering at 1000 ° C., the ions implanted into the polysilicon film forming the semiconductor layer 1a and the scanning line 3a may be activated. On the other hand, by not performing such sintering on the second interlayer insulating film 42, stress generated near the interface of the capacitance line 300 may be reduced.

Data lines 6 a are formed on second interlayer insulating film 42, and third interlayer insulating film 43 having contact holes 85 leading to relay layer 71 formed thereon.
Are formed. The pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 43 configured as described above.

In this embodiment, in particular, as shown in FIG. 3, by stacking a large number of conductive layers of a predetermined pattern, the data lines on the ground under the pixel electrode 9a (ie, the surface of the third interlayer insulating film 43) are formed. The occurrence of a step in the region along the scanning line 6a or the scanning line 3a is mitigated by performing a flattening process on the surface of the third interlayer insulating film 43. For example, CMP (Chemic
Al Mechanical Polishing) or the like, or by using an organic SOG (Spin On Glass) to form a flat surface. As described above, by reducing the step between the region where the wiring, the element, and the like are present and the region where the wiring, the element, and the like are not present, it is possible to ultimately reduce image defects such as defective alignment of liquid crystal due to the step. However, instead of or in addition to performing the flattening process on the third interlayer insulating film 43, the TFT array substrate 10, the underlying insulating film 12, the first
A groove is dug in at least one of the interlayer insulating film 41 and the second interlayer insulating film 42, and the wiring such as the data line 6a and the TFT 3
The flattening process may be performed by embedding 0 or the like.

Next, with reference to FIG. 4 to FIG. 6, the configuration, operation and effect of the surrounding portion 3b of the scanning line 3a in the above-described embodiment of the electro-optical device will be described in detail. Figure 4 here
FIG. 5 is a plan view showing a portion of the scanning line 3a including the surrounding portion 3b in FIG. 2 together with the semiconductor layer 1a (indicated by a dotted line in FIG. 2), and FIG. And FIG.
FIG. 5 is a sectional view taken along the line DD ′ of FIG. 4. In FIGS. 5 and 6, the scale of each layer and each member is different so that each layer and each member have a size recognizable in the drawings.

As shown in FIGS. 4 to 6, in the first embodiment, the scanning line 3a extends from the channel region 1a 'in plan view.
The semiconductor layer 1a including the channel region 1a and the contact hole opening regions (that is, the regions where the contact holes 83 and 81 are respectively opened) from the main line portion of the scanning line 3a at a position deviated by a predetermined distance along The surrounding part 3b is extended so as to surround.

Further, as shown in FIGS. 5 and 6, on the upper side of the semiconductor layer 1a, the capacitance line 300 and the data line 6a are constructed as an upper light shielding film as described above, and the lower side of the channel region 1a 'is formed. , A lower light-shielding film 11a is constructed.

Therefore, a configuration in which the semiconductor layer 1a is sandwiched between the lower light-shielding film 11a and the upper light-shielding film having a relatively small interlayer distance can be obtained. Very high light blocking performance is obtained. In particular, as shown in FIG. 6, even when oblique light L1 such as incident light and return light traveling obliquely with respect to the substrate surface and internal reflected light and multiple reflected light based on these are generated. Part of the light can be attenuated to low-light-intensity light L2 not only by the main line portion of the scanning line 3a but also by the light absorption or light reflection by the surrounding portion 3b before reaching the semiconductor layer 1a.
At this time, light is shielded by the surrounding portion 3b disposed at a position where the interlayer distance from the semiconductor layer 1a is very small,
In addition, by blocking light L1 inclined in any direction by the surrounding portion 3b, the light can be blocked very effectively.

In the first embodiment, in particular, the contact hole 81 and 83 surround the semiconductor layer 1a including the contact hole opening region where the contact hole 81 and 83 are opened. Can be improved. Moreover, since the semiconductor layer 1a is formed to have the same width as the channel region 1a including the contact hole opening region, the semiconductor layer 1a is viewed in plan.
The surroundings of the semiconductor layer 1a can be covered by the surrounding part 3b having a rectangular planar shape at a position relatively close to the semiconductor layer 1a.

Here, in the first embodiment, FIGS. 2 and 3
As described above, the light shielding of the TFT 30 is performed from above and below by the various light shielding films.
It seems that there is no need to provide However, the incident light includes oblique light incident on the substrate 10 from an oblique direction. For example, the incident angle is 10 degrees from vertical
It contains about 10% of components shifted to about 15 degrees. In addition, the return light generally includes more angled oblique light. For this reason, the oblique light is reflected on the upper surface of the substrate 10, the upper surface of the lower light-shielding film 11a, or the like, or is reflected on the lower surface of the upper light-shielding film, and the like, and is reflected at another interface in the electro-optical device. The light is reflected to generate internally reflected light / multiple reflected light. Therefore, even if various light-shielding films are provided above and below the TFT 30, the oblique light L that enters through the gap between the two will be described.
1 (see FIG. 6) can be present, as in this embodiment,
It can be said that the effect of light shielding by the surrounding portion 3b that shields light beside the semiconductor layer 1a is large.

In the configuration shown in FIG.
If b does not exist, the oblique light L1 is reflected on the inner surface of the storage capacitor 70 and reaches the semiconductor layer 1a, so that the occurrence of light leakage current becomes remarkable.

As described above with reference to FIG. 4 to FIG. 6, according to the electro-optical device of the present embodiment, the provision of the surrounding portion 3b can enhance the light resistance, and provide strong incident light and return light. Even under severe conditions where light enters, the pixel electrode 9a can be satisfactorily switched and controlled by the TFT 30 with reduced light leakage current, and finally a bright and high-contrast image can be displayed.

In addition, in the present embodiment, since the surrounding portion 3b is formed integrally with the scanning line 3a from the same film, no additional process is required to form the surrounding portion 3b.

In the present embodiment described above, the surrounding portion 3b is formed on both the source side and the drain side with respect to each channel region 1a '. The effect is obtained. For example, in the case where it is difficult to form the surrounding portion 3b on both the source side and the drain side in view of the arrangement of the wirings and the elements around the semiconductor layer 1a, one of the layouts may be added without forcing the layout. Only the surrounding portion 3b may be provided.

In the embodiment described above, the pixel switching TFT 30 preferably has the LDD structure as shown in FIG. 3, but does not implant impurities into the low-concentration source region 1b and the low-concentration drain region 1c. An impurity may be implanted at a high concentration using an offset structure, or using a gate electrode composed of a part of the scanning line 3a as a mask.
A self-aligned TFT that forms high-concentration source and drain regions in a self-aligned manner may be used. In the present embodiment, the gate switching TFT 30 has a single gate structure in which only one gate electrode is disposed between the high-concentration source region 1d and the high-concentration drain region 1e, but two or more gate electrodes are provided between them. It may be arranged. In this way, the TF is more than dual gate or triple gate.
When T is formed, a leak current at a junction between the channel and the source / drain region can be prevented, and a current at the time of off can be reduced.

Second Embodiment Next, an electro-optical device according to a second embodiment of the present invention will be described with reference to FIGS. The equivalent circuits such as various elements and wirings in the second embodiment are the same as those in the first embodiment shown in FIG.
This is the same as the case of the first embodiment shown in FIG. FIG. 7 is a sectional view taken along the line AA ′ of FIG. 2 in the second embodiment, and FIG.
Represents a portion of the scanning line 3a including the surrounding portion 3b ′,
FIG. 2 is a plan view extracted together with a (shown by a dotted line in the figure) and a groove 12cv (shown by a hatched line). 9 is a cross-sectional view taken along the line CC ′ of FIG. 8, and FIG. 10 is a cross-sectional view taken along the line DD ′ of FIG. In FIGS. 7, 9 and 10, the scale of each layer and each member is different so that each layer and each member have a size recognizable in the drawings.

As shown in FIGS. 7 to 10, grooves 12cv are formed in the base insulating film 12 along the data lines 6a on both sides of the semiconductor layer 1a, and the scanning lines 3 are formed in the grooves 12cv.
A protruding portion 3c protruding from the lower side of the main line portion and the surrounding portion 3b 'toward the substrate is provided. That is, in the present embodiment, a part of the scanning line 3a extends as the protruding portion 3c. Other configurations are the same as those in the first embodiment.

Therefore, according to the second embodiment, the scanning line 3a
Since the main line portion and the protruding portion 3c include the protruding portion 3c protruding toward the substrate 10, the channel region 1a 'and the adjacent region can be three-dimensionally covered by the protruding portion 3c in addition to the surrounding portion 3a. Thus, the light shielding performance can be further improved.

More specifically, as shown in FIG. 9, incident light and return light traveling obliquely with respect to the substrate surface, and oblique light L3 such as internal reflected light and multiple reflected light based on these are generated. Even in this case, a part of the light can be attenuated to low-light-intensity light L4 before reaching the semiconductor layer 1a, particularly by light absorption or light reflection by the protrusion 3c.
Similarly, as shown in FIG. 10, even when the oblique light L5 is generated, a part of the light L5 has a low light intensity due to light absorption or light reflection by the protrusion 3c before reaching the semiconductor layer 1a. Of light L6. At this time, by shielding light with the surrounding portion 3b 'and the protruding portion 3c arranged at a position where the interlayer distance from the semiconductor layer 1a is very small, the light shielding can be performed very effectively.

Further, according to the second embodiment, after the trench 12cv is dug in the base insulating film 12 at the position where the projecting portion 3c is to be provided, a polysilicon film or the like is laminated to form the scanning line 3a and its surrounding portion 3b '. Is formed, the projection 3c can be easily formed.

In addition, in the second embodiment, the protrusion 3c
Does not reach the lower light-shielding film 11a and does not contact the lower light-shielding film 11a. Therefore, the lower light shielding film 11
Even if a is a conductive film, it is possible to prevent the potential fluctuation from adversely affecting the scanning line 3a.

In the second embodiment described above, the scanning line 3
For a, a protruding portion 3c is provided in addition to the surrounding portion 3b ', but the surrounding portion 3b' is deleted, and the scanning line 3a is formed so as to include only a main line portion extending linearly and the protruding portion. You may comprise. With this configuration, the light-shielding performance is reduced by the absence of the surrounding portion, but the light-shielding performance is improved by the amount that the main line portion of the scanning line 3a has the protruding portion as compared with the case of the scanning line having no protruding portion. You.

In the second embodiment, the surrounding portion 3b '
May be formed by digging the groove 12cv along the entirety of the surrounding portion 3b '.

In the second embodiment, the surrounding portion 3
Although b ′ is provided so as to protrude above the base insulating film 12, it may be formed so as to protrude only below the surface of the base insulating film 12 without protruding above the base insulating film 12. this is,
The surrounding portion 3b 'is formed by using a photomask for forming the scanning line 3a.
If a resist is formed on the substrate, it can be easily formed. This configuration can be adopted in all embodiments of the present invention.

(Third Embodiment) Next, an electro-optical device according to a third embodiment of the present invention will be described with reference to FIG. FIG. 11 is a cross-sectional view of the third embodiment at a location corresponding to the CC ′ cross-section in FIG.

In the third embodiment, the depth of the trench 12cv 'dug in the base insulating film 12 is large, and the projection 3
The point at which the tip of c 'is in contact with the lower light-shielding film 11a, and the lower light-shielding film 11a' is divided for each scanning line 3a, for example, a plurality of stripe-like lower light-shielding lines along the scanning line 3a. The point that the film 11a is provided is different from the above-described second embodiment, and the other configuration is the same as that of the second embodiment.

Therefore, according to the third embodiment, the space between the lower light-shielding film 11a 'having a relatively small interlayer distance and the main body of the scanning line 3a functioning as a light-shielding film is at least partially formed by the projection 3c'. It is a closed space,
A configuration in which the semiconductor layer 1a is arranged in this space is obtained. Therefore, extremely high light-shielding performance can be obtained with respect to oblique light inclined in any direction.

In the third embodiment, the lower light shielding film 11a
Is made of a conductive film and can be used as a redundant wiring for the scanning line 3a. However, the lower light-shielding film 11a can be made of an insulating film.

(Fourth Embodiment) Next, an electro-optical device according to a fourth embodiment of the present invention will be described with reference to FIG. FIG. 12 is a cross-sectional view of the fourth embodiment at a location corresponding to the CC ′ cross-section in FIG. 8.

The fourth embodiment is different from the above-described third embodiment in that the scanning line 3a is formed of a multilayer film, and the other configuration is the same as that of the third embodiment. More specifically, the scanning line 3a is formed by laminating a conductive polysilicon film 31 also functioning as a light absorbing layer and a light shielding film 32 made of a conductive metal film containing a high melting point metal in this order. . For this reason, the oblique light L7 from the upper side is
Is reflected or absorbed. In particular, the oblique light L8 from below is at least partially absorbed by the polysilicon film 31.

Therefore, according to the fourth embodiment, it is possible to improve the light-shielding performance by the protruding portion 3c 'and the surrounding portion 3b by using the scanning line 3a formed of the laminated body without substantially lowering the function of the gate electrode or the scanning line. Becomes possible. still,
Also in the fourth embodiment, since the lower light-shielding film 11a is made of a conductive film, it can be used as a redundant wiring for the scanning line 3a.
However, the lower light-shielding film 11a can be made of an insulating film. Further, the scanning line 3a may be a metal wiring.

(Fifth Embodiment) Next, an electro-optical device according to a fifth embodiment of the present invention will be described with reference to FIG. FIG. 13 is a sectional view of the fourth embodiment at a location corresponding to the section taken along line CC ′ of FIG.

The fifth embodiment is different from the above-described third embodiment in that the scanning line 3a is formed of a multilayer film, and the other configuration is the same as that of the third embodiment. More specifically, the scanning line 3a includes a light-shielding film 33 made of a conductive metal film that can function as a gate electrode and a conductive polysilicon film 34 that also functions as a light absorption layer, which are stacked in this order. Become. Therefore, in particular, the oblique light 9 from the upper side
Is at least partially absorbed by the polysilicon film 34. Then, the oblique light 10 from below is applied to the light shielding film 3.
3 is reflected or absorbed.

Therefore, according to the fifth embodiment, it is possible to improve the light shielding performance by the protruding portion 3c 'and the enclosing portion 3b by using the scanning line 3a made of the laminated body without substantially lowering the function of the gate electrode or the scanning line. Becomes possible. still,
Also in the fifth embodiment, since the lower light-shielding film 11a is made of a conductive film, it can be used as a redundant wiring for the scanning line 3a.
However, the lower light-shielding film 11a can be made of an insulating film.

In the first to third embodiments, the scanning line 3a formed of a single-layer film may be formed of a conductive metal film that can function as a gate electrode.

(Modification) Next, a modification of the present invention will be described with reference to FIG. Here, FIG.
(A), (b), (c), (d), (e), and (f) respectively show the scanning line 3a portion including the surrounding portion 3b in the modified embodiment, and the semiconductor layer 1a (shown by a dotted line in the figure). It is a top view excerpted and shown.

In a modification, FIG.
As shown in (b), (c) and (d), the surrounding portion 3
b lacks one or a plurality of portions and does not completely surround the semiconductor layer 1a in plan view. Other configurations are the same as those of any of the various embodiments described above.
As described above, when the surrounding portion 3b is missing, the light blocking performance is reduced. However, compared to an electro-optical device having no surrounding portion 3b, the light blocking performance is improved by the presence of the surrounding portion 3b.

Further, as in the modification shown in FIG. 14E, the contact holes 81 and 83 smaller than the width of the semiconductor layer 1a in FIG. 14D are replaced with contact holes wider than the width in the semiconductor layer 1a. 181 and 183 may be perforated. That is, the semiconductor layer 1a can be connected to the data line 6a and the relay layer 71 by the contact holes 181 and 183 wider than the semiconductor layer 1a. According to this configuration, contact holes 181 and 1
Although the contact resistance of the pixel transistor 83 is increased to some extent, there is no problem even if the driving current of the pixel transistor is slightly smaller than that of the driving transistor, so that no problem occurs. Further, as in a modification shown in FIG. 14F, wide portions 281 and 283 may be provided in the semiconductor layer 1a in the regions where such large contact holes 181 and 183 are formed, respectively. Also, in FIGS. 14E and 14F, the surroundings may be configured. Further, a configuration in which a part thereof is cut may be adopted. Similarly, groove 1
2cv may be formed.

In the first and second embodiments described above, as shown in FIG.
It is preferable that the lattice-shaped upper light-shielding film composed of the data line 6a and the capacitance line 300 has a larger outline than the lattice-shaped lower light-shielding film 11a, and the lower light-shielding film 11a has a larger outline than the surrounding portion 3b. Alternatively, in the third to fifth embodiments described above, as shown in FIG. 15B, when viewed in a plan view, the grid-shaped upper light-shielding film including the data lines 6a and the capacitance lines 300 is a scanning line. The lower light-shielding film 1 has a larger outline than the stripe-shaped lower light-shielding film 11a ″ divided along
1a ″ preferably has a larger contour than the surrounding portion 3b.
With such a configuration, of the light incident from above, a component that passes through the side of the upper light-shielding film and is reflected on the upper surface of the lower light-shielding film 11a or 11a ″ can be reduced. On the other hand, since the lower light-shielding film 11a or 11a "has a larger contour than the surrounding portion 3b, the side of the lower light-shielding film 11a or 11a" of the light incident from below can be reduced. A component that passes through and enters the surrounding portion 3b can be reduced as much as possible, and a component of the light incident from below that passes through the lower light-shielding film 11a or 11a ″ and is reflected by the lower surface of the upper light-shielding film (that is, returning (Internal reflection light or multiple reflection light composed of light)
b can be reduced.

(Overall Configuration of Electro-Optical Device) The overall configuration of the electro-optical device in each embodiment configured as described above will be described with reference to FIGS. Note that FIG.
FIG. 17 is a plan view of the TFT array substrate 10 together with the components formed thereon viewed from the counter substrate 20 side, and FIG. 17 is a cross-sectional view taken along the line HH ′ of FIG.

Referring to FIG. 16, a sealing material 52 is provided on the TFT array substrate 10 along the edge thereof. A film 53 is provided. In a region outside the sealing material 52, a data line driving circuit 101 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10. A scanning line driving circuit 1 for driving a scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing.
04 are provided along two sides adjacent to this one side. If the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. In addition, the data line driving circuit 10
1 may be arranged on both sides along the side of the image display area 10a. Further, on one remaining side of the TFT array substrate 10, the scanning line driving circuits 10 provided on both sides of the image display area 10a are provided.
A plurality of wirings 105 are provided to connect the four wirings. In at least one of the corners of the counter substrate 20, a conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20 is provided. Then, as shown in FIG. 17, the opposite substrate 20 having substantially the same contour as the sealing material 52 shown in FIG.

Note that, on the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit for applying an image signal to a plurality of data lines 6a at a predetermined timing, a plurality of Data line 6a
A precharge circuit for supplying a precharge signal of a predetermined voltage level prior to the image signal, an inspection circuit for inspecting the quality, defects, and the like of the electro-optical device during manufacturing or shipping. Good.

In the embodiment described above with reference to FIGS. 1 to 17, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TAB (Tape Automated bonding) substrate The driving LSI mounted thereon may be electrically and mechanically connected via an anisotropic conductive film provided on the periphery of the TFT array substrate 10. For example, TN (Twisted) is provided on each of the side of the opposite substrate 20 where the projection light is incident and the side where the emission light of the TFT array substrate 10 is emitted.
Nematic) mode, VA (Vertically Aligned) mode, PDLC (Polymer Dispersed Liquid Crystal) mode and other operation modes, and normally white mode / normally black mode. They are arranged in a predetermined direction.

Since the electro-optical device in the above-described embodiment is applied to a projector, three electro-optical devices are used as RGB light valves, and each light valve has a dichroic for RGB color separation. The light of each color decomposed via the mirror is respectively incident as projection light. Therefore, in each embodiment, the opposing substrate 20 is not provided with a color filter. However, an RGB color filter may be formed on the opposing substrate 20 in a predetermined area facing the pixel electrode 9a together with its protective film. In this way, the electro-optical device in each embodiment can be applied to a direct-view or reflective color electro-optical device other than the projector. Further, a micro lens may be formed on the counter substrate 20 so as to correspond to one pixel. Alternatively, it is also possible to form a color filter layer with a color resist or the like under the pixel electrode 9a facing the RGB on the TFT array substrate 10. With this configuration, a bright electro-optical device can be realized by improving the efficiency of collecting incident light. Furthermore, the counter substrate 2
A dichroic filter that creates RGB colors using light interference may be formed by depositing many interference layers having different refractive indices on the zero. According to the counter substrate with the dichroic filter, a brighter color electro-optical device can be realized.

The present invention is not limited to the above-described embodiment, but can be appropriately modified without departing from the spirit or spirit of the invention which can be read from the claims and the entire specification. The electro-optical device and the manufacturing method thereof are also included in the technical scope of the present invention.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit of various elements, wires, and the like provided in a plurality of pixels in a matrix forming an image display area in an electro-optical device according to a first embodiment of the present invention.

FIG. 2 is a plan view of a plurality of adjacent pixel groups of a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device according to the first embodiment.

FIG. 3 is a sectional view taken along line AA ′ of FIG. 2 in the first embodiment.

FIG. 4 is a plan view illustrating a protruding portion and a semiconductor layer in FIG. 2;

FIG. 5 is a sectional view taken along line C-C 'of FIG.

FIG. 6 is a sectional view taken along line D-D 'of FIG.

FIG. 7 is a cross-sectional view of a portion corresponding to a cross section taken along line AA ′ of FIG. 2 in the electro-optical device according to the second embodiment of the present invention.

FIG. 8 is a plan view extracting and showing a protrusion and a semiconductor layer according to a second embodiment.

FIG. 9 is a sectional view taken along line C-C 'of FIG.

FIG. 10 is a sectional view taken along line D-D 'of FIG.

FIG. 11 is a sectional view of a portion corresponding to a section taken along line CC ′ of FIG. 8 in the electro-optical device according to the third embodiment of the present invention.

FIG. 12 is a sectional view of a portion corresponding to a section taken along line CC ′ of FIG. 8 in the electro-optical device according to the fourth embodiment of the present invention.

FIG. 13 is a sectional view of a portion corresponding to a section taken along line CC ′ of FIG. 8 in the electro-optical device according to the fifth embodiment of the present invention.

FIG. 14 is a plan view extracting and showing a protrusion and a semiconductor layer in various modified embodiments.

FIG. 15 is a plan view showing a preferable magnitude relationship between an upper light-shielding film, a surrounding portion, and a lower light-shielding film in each embodiment.

FIG. 16 is a plan view of the TFT array substrate in the electro-optical device according to the embodiment together with the components formed thereon as viewed from the counter substrate side.

17 is a sectional view taken along the line H-H 'of FIG.

[Explanation of symbols]

 1a Semiconductor layer 1a 'Channel region 1b Low-concentration source region 1c Low-concentration drain region 1d High-concentration source region 1e High-concentration drain region 2 Insulating film 3a Scanning line 3b Surrounding portion 3c Projecting portion 6a ... data line 9a ... pixel electrode 10 ... TFT array substrate 11a ... lower light-shielding film 12 ... base insulating film 12cv ... groove 16 ... alignment film 20 ... counter substrate 21 ... counter electrode 22 ... alignment film 30 ... TFT 50 ... liquid crystal layer 70 ... storage capacitor 71 ... relay layer 75 ... dielectric film 81, 83, 85 ... contact hole 300 ... capacitance line

 ──────────────────────────────────────────────────続 き Continued from the front page F term (reference) 2H092 JA25 JA34 JA37 JA41 JA46 JB22 JB31 JB51 JB61 KB13 NA01 NA22 PA01 PA02 PA04 PA08 PA09 5C094 AA10 AA31 BA03 BA43 CA19 DA14 EA04 EA07 ED15 5F110 AA30 BB01 CC02 EE02 DD03 DD03 DD03 HM15 HM19 NN44 NN45 NN46 NN48 QQ11

Claims (19)

[Claims] 1. A thin film transistor having a pixel electrode on a substrate, a semiconductor layer connected to the pixel electrode and including a channel region and extending longitudinally in a first direction, and a scanning line connected to the thin film transistor And a built-in light-shielding film that covers at least the channel region from above, and the scanning line includes a gate electrode of the thin film transistor that is arranged to face the channel region with a gate insulating film interposed therebetween, and is viewed in plan. And has a main line portion extending in a second direction intersecting the first direction, and surrounds the semiconductor layer from the main line portion at a position deviated from the channel region by a predetermined distance in the second direction when viewed in plan. An electro-optical device having a surrounding portion extended as described above. 2. The surrounding portion includes a first surrounding portion surrounding a source region of the semiconductor layer when viewed in plan, and a second surrounding portion surrounding a drain region of the semiconductor layer as viewed in plan. The electro-optical device according to claim 1, comprising: 3. A part of a source region and a part of a drain region of the semiconductor layer are each a contact hole opening region, and the surrounding portion includes the semiconductor layer including the contact hole opening region. The electro-optical device according to claim 1, wherein the electro-optical device surrounds the device. 4. The device according to claim 3, wherein at least one of said source region and said drain region is formed to have the same width as said channel region including said contact hole opening region. An electro-optical device according to claim 1. 5. The electro-optical device according to claim 1, further comprising a lower light-shielding film that covers at least the channel region from below on the substrate. 6. The substrate according to claim 1, wherein the scanning line further includes a protrusion protruding in a vertical direction of the substrate from the main line at a position deviated from the channel region by a predetermined distance in the second direction. Item 5. The electro-optical device according to any one of Items 1 to 4. 7. The electro-optical device according to claim 6, wherein the scanning line further has a protrusion protruding from the surrounding portion in a vertical direction of the substrate. 8. The semiconductor device further comprising a lower light-shielding film on the substrate, the lower light-shielding film covering at least the channel region from below, wherein the protruding portion is in contact with the lower light-shielding film at a tip end thereof. The electro-optical device according to claim 6 or 7, wherein 9. The semiconductor device according to claim 1, further comprising a lower light-shielding film on the substrate, the lower light-shielding film covering at least the channel region from below, and the protrusion is not in contact with the lower light-shielding film. Item 8. The electro-optical device according to item 6 or 7. 10. The upper light-shielding film has a larger outline than the lower light-shielding film when viewed in a plan view, and the lower light-shielding film has a larger outline than the surrounding portion. The electro-optical device according to any one of claims 8 and 9. 11. A thin film transistor having a pixel electrode on a substrate, a semiconductor layer connected to the pixel electrode and including a channel region and extending longitudinally in a first direction, and a scanning line connected to the thin film transistor And a built-in light-shielding film that covers at least the channel region from above, and the scanning line includes a gate electrode of the thin film transistor that is arranged to face the channel region with a gate insulating film interposed therebetween, and is viewed in plan. A protruding portion that protrudes downward from the main line portion at a position deviated from the channel region by a predetermined distance in the second direction when viewed in a plan view, the main line portion extending in a second direction intersecting the first direction. An electro-optical device comprising: 12. The electro-optical device according to claim 11, wherein the projecting portion is formed in a groove dug in an interlayer insulating film located below the scanning line. 13. A lower light-shielding film that covers at least the channel region from below on the substrate, wherein the protruding portion is in contact with the lower light-shielding film at a tip end thereof. The electro-optical device according to claim 11 or 12, wherein 14. The electro-optical device according to claim 13, wherein the lower light-shielding film is formed of a conductive film and formed in a stripe shape extending along the scanning line. 15. The light-shielding film according to claim 13, wherein the lower light-shielding film is made of an insulating film and is formed in a lattice shape including a portion extending along the scanning line and a portion extending crossing the scanning line. An electro-optical device according to claim 1. 16. The semiconductor device according to claim 16, further comprising a lower light-shielding film that covers at least the channel region from below on the substrate, wherein the protrusion is not in contact with the lower light-shielding film. Item 12. An electro-optical device according to item 11. 17. The scanning line according to claim 1, wherein the scanning line is formed of a laminate including a light absorbing layer and a light shielding layer.
The electro-optical device according to any one of the above. 18. The electro-optical device according to claim 17, wherein the light absorption layer is made of a conductive polysilicon film, and the light shielding layer is made of a metal film containing a conductive high melting point metal. apparatus. 19. A thin film transistor having, on a substrate, a pixel electrode, a semiconductor layer connected to the pixel electrode and including a channel region and extending longitudinally in a first direction, and the channel of the semiconductor layer of the thin film transistor A scanning line that includes a gate electrode of the thin film transistor that is opposed to the region with a gate insulating film interposed therebetween and extends in a second direction that intersects the first direction when viewed in plan; An electro-optical device, comprising: a light-shielding portion extending so as to surround the semiconductor layer from a position deviated by a predetermined distance in the second direction.