JP2002094061A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2002094061A
JP2002094061A JP2000279355A JP2000279355A JP2002094061A JP 2002094061 A JP2002094061 A JP 2002094061A JP 2000279355 A JP2000279355 A JP 2000279355A JP 2000279355 A JP2000279355 A JP 2000279355A JP 2002094061 A JP2002094061 A JP 2002094061A
Authority
JP
Japan
Prior art keywords
conductivity type
layer
trench
base layer
type base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000279355A
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English (en)
Japanese (ja)
Other versions
JP2002094061A5 (enExample
Inventor
Kazutoshi Nakamura
和敏 中村
Norio Yasuhara
紀夫 安原
Yusuke Kawaguchi
雄介 川口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000279355A priority Critical patent/JP2002094061A/ja
Publication of JP2002094061A publication Critical patent/JP2002094061A/ja
Publication of JP2002094061A5 publication Critical patent/JP2002094061A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000279355A 2000-09-14 2000-09-14 半導体装置及びその製造方法 Pending JP2002094061A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000279355A JP2002094061A (ja) 2000-09-14 2000-09-14 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000279355A JP2002094061A (ja) 2000-09-14 2000-09-14 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2002094061A true JP2002094061A (ja) 2002-03-29
JP2002094061A5 JP2002094061A5 (enExample) 2004-12-24

Family

ID=18764371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000279355A Pending JP2002094061A (ja) 2000-09-14 2000-09-14 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2002094061A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072356A (ja) * 2003-08-26 2005-03-17 Sanyo Electric Co Ltd 絶縁ゲート型電界効果半導体装置およびその製造方法
US7064384B2 (en) 2002-09-02 2006-06-20 Kabushiki Kaisha Toshiba Semiconductor device
CN1309093C (zh) * 2002-12-03 2007-04-04 株式会社东芝 半导体器件
US7227225B2 (en) 2003-04-23 2007-06-05 Kabushiki Kaisha Toshiba Semiconductor device having a vertical MOS trench gate structure
JP2011055017A (ja) * 2010-12-17 2011-03-17 Toshiba Corp 半導体装置
JP2012195367A (ja) * 2011-03-15 2012-10-11 Toyota Central R&D Labs Inc 半導体装置とその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064384B2 (en) 2002-09-02 2006-06-20 Kabushiki Kaisha Toshiba Semiconductor device
CN1309093C (zh) * 2002-12-03 2007-04-04 株式会社东芝 半导体器件
US7227225B2 (en) 2003-04-23 2007-06-05 Kabushiki Kaisha Toshiba Semiconductor device having a vertical MOS trench gate structure
JP2005072356A (ja) * 2003-08-26 2005-03-17 Sanyo Electric Co Ltd 絶縁ゲート型電界効果半導体装置およびその製造方法
JP2011055017A (ja) * 2010-12-17 2011-03-17 Toshiba Corp 半導体装置
JP2012195367A (ja) * 2011-03-15 2012-10-11 Toyota Central R&D Labs Inc 半導体装置とその製造方法

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