JP2002086351A - ポリッシング装置 - Google Patents
ポリッシング装置Info
- Publication number
- JP2002086351A JP2002086351A JP2001195330A JP2001195330A JP2002086351A JP 2002086351 A JP2002086351 A JP 2002086351A JP 2001195330 A JP2001195330 A JP 2001195330A JP 2001195330 A JP2001195330 A JP 2001195330A JP 2002086351 A JP2002086351 A JP 2002086351A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- pad
- polishing pad
- substrate
- polishing table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 529
- 238000004804 winding Methods 0.000 claims description 47
- 230000007246 mechanism Effects 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 12
- 229920002635 polyurethane Polymers 0.000 claims description 9
- 239000004814 polyurethane Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 description 133
- 239000007788 liquid Substances 0.000 description 41
- 235000012431 wafers Nutrition 0.000 description 32
- 238000012546 transfer Methods 0.000 description 31
- 239000010408 film Substances 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 22
- 229910003460 diamond Inorganic materials 0.000 description 20
- 239000010432 diamond Substances 0.000 description 20
- 239000010949 copper Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 15
- 238000005192 partition Methods 0.000 description 12
- 238000005406 washing Methods 0.000 description 12
- 239000012530 fluid Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000006061 abrasive grain Substances 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 230000032258 transport Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000008237 rinsing water Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
Landscapes
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001195330A JP2002086351A (ja) | 2000-06-30 | 2001-06-27 | ポリッシング装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000199923 | 2000-06-30 | ||
JP2000-199923 | 2000-06-30 | ||
JP2001195330A JP2002086351A (ja) | 2000-06-30 | 2001-06-27 | ポリッシング装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006157961A Division JP2006272546A (ja) | 2000-06-30 | 2006-06-07 | 研磨装置及び研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002086351A true JP2002086351A (ja) | 2002-03-26 |
JP2002086351A5 JP2002086351A5 (enrdf_load_stackoverflow) | 2004-12-24 |
Family
ID=26595196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001195330A Abandoned JP2002086351A (ja) | 2000-06-30 | 2001-06-27 | ポリッシング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002086351A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005532176A (ja) * | 2002-05-23 | 2005-10-27 | キャボット マイクロエレクトロニクス コーポレイション | 微小孔性研磨パッド |
JP2009277888A (ja) * | 2008-05-15 | 2009-11-26 | Ebara Corp | 研磨方法 |
JP2019172295A (ja) * | 2018-03-28 | 2019-10-10 | 富士紡ホールディングス株式会社 | 梱包物及び被運搬物 |
CN112692717A (zh) * | 2019-10-03 | 2021-04-23 | 株式会社荏原制作所 | 基板研磨装置、膜厚映射制作方法及基板的研磨方法 |
-
2001
- 2001-06-27 JP JP2001195330A patent/JP2002086351A/ja not_active Abandoned
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005532176A (ja) * | 2002-05-23 | 2005-10-27 | キャボット マイクロエレクトロニクス コーポレイション | 微小孔性研磨パッド |
JP2009274208A (ja) * | 2002-05-23 | 2009-11-26 | Cabot Microelectronics Corp | 微小孔性研磨パッド |
JP2009277888A (ja) * | 2008-05-15 | 2009-11-26 | Ebara Corp | 研磨方法 |
JP2019172295A (ja) * | 2018-03-28 | 2019-10-10 | 富士紡ホールディングス株式会社 | 梱包物及び被運搬物 |
CN112692717A (zh) * | 2019-10-03 | 2021-04-23 | 株式会社荏原制作所 | 基板研磨装置、膜厚映射制作方法及基板的研磨方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040122 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040122 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060118 |
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A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060124 |
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A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060324 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060509 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060607 |
|
A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20060818 |