JP2002086351A - Polishing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a rotary type polishing device including a polishing table which is rotated, in which a polishing pad can be replaced automatically without interrupting the CMP process. SOLUTION: The polishing device comprises the polishing table 10 rotating or moving circulatively, a top ring 14 installed over the table 10 as movable in the vertical direction and holding a base board W removably, a pair of rolls 22 and 30 moving in a single piece with the table 10 and capable of rotating round its own axis, and polishing pad 36 wound fast on the roll 22 and taken up on the other roll 30 to run along the oversurface of the table 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus for polishing a surface of an object to be polished such as a semiconductor wafer into a flat and mirror-like surface, and more particularly, to a so-called rotary type polishing apparatus for rotating or circulating a polishing table. The present invention relates to a polishing apparatus capable of automatically changing a polishing pad without stopping movement.

[0002]

2. Description of the Related Art In recent years, as the degree of integration of semiconductor devices has increased, circuit wiring has become finer, and the distance between wirings has become smaller. In particular, in the case of optical lithography with a line width of 0.5 μm or less, the depth of focus becomes shallow, so that the image plane of the stepper needs to be flat. As one means for flattening the surface of such a semiconductor wafer, a chemical mechanical polishing (CM)
A polishing apparatus for performing P) is known.

In the manufacture of a semiconductor device, a process of forming a thin film on a semiconductor device, performing fine processing for patterning and opening, and then stacking the next thin film is repeated many times.
2. Description of the Related Art In recent years, semiconductor devices have been increasingly miniaturized and element structures have become more complicated. In addition, the number of layers of the logic multi-layer wiring is increasing. For this reason, the surface of the semiconductor device tends to have more and more irregularities, and the level difference tends to be large. If the surface irregularities increase, the film thickness at the stepped part becomes thinner when forming the thin film, and the open due to the disconnection of the wiring and the short circuit due to the insulation failure between the wiring layers occur, so that a good product cannot be obtained or the yield decreases. I do. In addition, even if it operates normally at the initial stage, there is a problem of reliability when used for a long time. For this reason, in the process of manufacturing semiconductor devices, surface flattening technology has become increasingly important. The most important of these planarization techniques is the aforementioned chemical mechanical polishing. In this chemical mechanical polishing, a semiconductor wafer is polished by using a polishing apparatus while supplying a polishing liquid (abrasive liquid) containing abrasive grains such as silica (SiO ₂ ) onto a polishing surface such as a polishing pad. Is polished by sliding contact with the surface.

Conventionally, this kind of polishing apparatus is shown in FIG.
As shown in FIG. 6 and FIG. 17, a polishing table 102 having a polishing pad (polishing cloth) 100 adhered to the upper surface thereof, and a table driving motor 1 for rotating the polishing table 102
04 and a top ring 106 that can move up and down to hold a substrate W such as a semiconductor wafer to be polished with the surface to be polished facing the polishing table 102. In this polishing apparatus, the substrate W is urged by the top ring 106 at a constant pressure while the polishing table 102 and the top ring 106 are rotated.
And a polishing liquid is supplied from a nozzle (not shown) to polish the surface to be polished of the substrate W to a flat and mirror surface. The polishing liquid is, for example, a suspension of abrasive grains made of fine particles of silica or the like in an alkaline solution, and is a chemical mechanical polishing which is a combined action of a chemical polishing action by an alkali and a mechanical polishing action by the abrasive grains. The substrate W is polished.

In this type of polishing apparatus, the polishing pad 100 is usually regenerated by a dresser made of a nylon brush, diamond, or the like, but is replaced when the original performance cannot be restored by the dresser.

[0006]

However, in the above conventional example, the polishing pad 100 is generally attached to the upper surface of the polishing table 102 with an adhesive tape. However, there is a problem that not only the CMP process needs to be temporarily stopped, but also the operation of peeling and attaching the polishing pad at the time of the replacement requires skill.

In order to improve this, as shown in FIG. 18, the polishing pad 100 is vacuum-sucked by a vacuum suction unit 108 provided on the polishing table 102 so that the polishing pad 10
A device has been developed which allows the replacement of 0 to be performed quickly without requiring skill. However, even in this case, since the polishing pad 100 cannot be replaced while the polishing table 102 is rotating, it is necessary to temporarily stop the CMP process when replacing the polishing pad 100.

As shown in FIG. 19, a polishing table 110 is fixed, and a pair of rolls 112, 114 are rotatably arranged on both sides of the polishing table 110. In some cases, the polishing pad 100 is wound in one direction by the other roll 114 so that the polishing pad 100 travels in one direction at a constant speed during polishing along the upper surface of the polishing table 110. However, since the method shown in FIG. 19 is a method in which the polishing pad 100 is moved linearly, it cannot be applied to a so-called rotary type polishing apparatus in which the polishing table rotates or circulates.

The present invention has been made in view of the above, and has a configuration in which a polishing table is rotated or circulated.
It is a so-called rotary type polishing apparatus,
An object of the present invention is to provide a polishing apparatus capable of automatically changing a polishing pad without stopping a process. Another object of the present invention is to provide a polishing apparatus in which a polishing table is caused to perform a predetermined movement, and in which a polishing pad can be automatically replaced without stopping a CMP process.

[0010]

According to a first aspect of the present invention, there is provided:
A polishing table that rotates or circulates, a top ring that is disposed above and below the polishing table so as to be vertically movable and that detachably holds the object to be polished, and a pair of rolls that move integrally with the polishing table and rotate freely. A polishing pad wound around one of the pair of rolls and wound around the other and running along the upper surface of the polishing table. According to the present invention, a polishing pad wound around a roll that rotates integrally with a polishing table is provided at a predetermined distance along the upper surface of the polishing table, for example, even during a movement such as a rotation or a circulating movement of the polishing table. The polishing pad can be automatically replaced by running and stopping for one pad.

In a preferred aspect of the present invention, the polishing table has a suction holding section for suction holding the polishing pad. Thus, the polishing pad can be reliably fixed to the upper surface of the polishing table, and the polishing pad can be prevented from moving (shifting) with respect to the polishing table during polishing. In a preferred aspect of the present invention, a roll driving motor that is rotatable wirelessly or by wire is connected to at least the winding side of the roll. Thus, by sending a signal to the roll driving motor and rotating it, the polishing pad can be automatically replaced.

In a preferred aspect of the present invention, the polishing pad comprises a foamed polyurethane pad or a suede type pad, or a fixed abrasive pad. In a preferred aspect of the present invention, the polishing pad includes a pad roughness detecting mechanism for detecting the roughness of the polishing pad. In a preferred aspect of the present invention, the roll driving motor is driven based on a detection value of the pad roughness detection mechanism. In a preferred aspect of the present invention, the polishing pad includes a plurality of polishing pads divided along a winding direction.

According to a second aspect of the present invention, there is provided a polishing table which performs a predetermined movement, a top ring which is disposed above the polishing table so as to be vertically movable and which detachably holds an object to be polished, and a polishing pad. Polishing pad supply means capable of holding and feeding out the polishing pad,
A polishing pad holding means for holding a polishing pad fed from the polishing pad supply means and stretching the polishing pad on the polishing table so as to be able to move integrally with the polishing table. is there. According to the present invention, the polishing pad can be paid out from the polishing pad supply means, the polishing pad fed out by the polishing pad holding means can be held, and the polishing pad can be stretched on the polishing table. Therefore, the polishing pad can be automatically replaced even during the operation of the polishing table. The polishing pad supply means includes a winding roll around which a long polishing pad is wound. The polishing pad holding means includes a winding roll for winding the polishing pad.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a polishing apparatus according to the present invention will be described below with reference to the drawings. FIGS. 1 and 2 are views showing a main part of a polishing apparatus according to a first embodiment of the present invention. FIG. 1 is a front view, and FIG. 2 is a plan view. As shown in FIGS. 1 and 2, the polishing apparatus
Polishing table 10 having a rectangular flat plate shape and polishing table 1
And a table driving motor 12 for rotating and rotating the wafer W, and a substrate W such as a semiconductor wafer, which is an object to be polished, which is disposed above and below the polishing table 10 so that the surface to be polished faces the polishing table 10 so as to be detachable. And a rotatable top ring 14 for holding.

Supporting plates 16 and 18 are mounted on the lower surface of both sides of the polishing table 10. A bearing 20 is mounted on one support plate 16, and one end of a winding roll 22 is rotatably supported on the bearing 20. The other end of the winding roll 22 is connected to a winding roll driving motor 26 via a coupling 24, and the winding roll 22 is driven by the driving of the winding roll driving motor 26.
Is to rotate. On the other support plate 18,
A bearing 28 is mounted, and the winding roll 3
0 is rotatably supported at one end. The other end of the take-up roll 30 is connected to a take-up roll drive motor 34 via a coupling 32 so that the take-up roll 30 rotates by itself when the take-up roll drive motor 34 is driven. Has become.

A long and long polishing pad 36 is wound around the winding roll 22.
Extends along the upper surface of the polishing table 10 and the polishing pad 3
The free end of 6 is detachably gripped by the take-up roll 30. As a result, the winding roll 2 is driven by the winding roll driving motor 26 and the winding roll driving motor 34.
2 and the take-up roll 30 are rotated in synchronization in the same direction, and the polishing pad 36 wound around the take-up roll 22 is taken up by the take-up roll 30 so that the polishing pad 36 is moved along the upper surface of the polishing table 10. To run. The tension of the polishing pad 36 can be adjusted by adjusting the rotation speeds of the winding roll 22 and the winding roll 30.
The polishing pad 36 can be rewound by rotating the winding roll 22 and the winding roll 30 in the opposite direction to that described above.

The polishing table 10 is provided with a suction holding portion 40 for holding the polishing pad 36 by vacuum suction on the upper surface thereof. The suction holding unit 40 has a plurality of vacuum suction holes opened on the upper surface of the polishing table 10, and the suction holding unit 40 is connected to a vacuum source such as a vacuum pump. The table driving motor 12 includes a controller 42.
A rotary joint 46 that connects a wire 44 extending from the motor to the winding roll drive motor 26 and a wire extending from the take-up roll drive motor 34 is attached. The controller 42 is configured to control the driving of the winding roll driving motor 26 and the winding roll driving motor 34. The controller 42 may omit the wiring and wirelessly control the driving of the winding roll driving motor 26 and the winding roll driving motor 34.

According to this embodiment, the polishing table 1
The substrate W is pressed against the polishing pad 36 with a constant pressure by the top ring 14 while moving and rotating the top ring 14 and the top ring 14, respectively, and the surface to be polished of the substrate W is supplied while supplying a polishing liquid from a nozzle (not shown). Is polished flat and mirror-finished. At this time, by holding the polishing pad 36 by suction on the upper surface of the polishing table 10, the polishing pad 36 moves (shifts) with respect to the polishing table 10 during polishing.
Is prevented.

Here, for example, when polishing an oxide film formed on the substrate W, a silica slurry such as SS-25 (manufactured by Cabot Corporation) or CeO ₂ slurry is used as a polishing liquid, and tungsten is polished. When you do, W20
H _{2 with} a silica slurry such as 00 (Cabot)
A slurry containing an O ₂ oxidizing agent or an alumina-based slurry of iron nitrate is used. When polishing copper, H
A slurry containing an oxidizing agent for forming a copper oxide such as ₂ O ₂ or a slurry for shaving a barrier layer is used. Further, in the middle of polishing, in order to remove particles and defects (defects), a surfactant or an alkali solution may be supplied as a polishing liquid to perform final polishing.

As the polishing pad 36, for example, an IC
A suede type material such as foamed polyurethane such as 1000 or polytex is used. in this case,
In order to increase the elasticity of the polishing pad 36, a nonwoven fabric, a sponge, or the like may be attached to the back surface of the polishing pad 36, or a nonwoven fabric, a sponge, or the like may be attached to the upper surface of the polishing table 10.

A so-called fixed abrasive pad in which particles of CeO ₂ , silica, alumina, SiC, diamond or the like are embedded in a binder is used as the polishing pad 36, and the polishing liquid is not supplied. That is, the polishing may be performed by supplying a polishing liquid containing no abrasive grains. As a means for measuring the state of the substrate during polishing, the polishing table 10 and / or the top ring 14 may be provided with an ammeter, a vibrometer, an optical sensor, or the like.

When the polishing pad 36 cannot recover its original ability even by the dresser, a signal is sent from the controller 42, and the winding roll driving motor 26 and the winding roll driving motor 34 are driven by this signal, and The polishing pad 36 wound on the winding roll 22 is wound up by the winding roll 30 by rotating the applying roll 22 and the winding roll 30 in synchronization in the same direction, so that the polishing pad 36 is placed on the upper surface of the polishing table 10. Run along.
After the polishing pad 36 has traveled a predetermined distance, the polishing pad 36 is stopped.

Thus, even when the polishing table 10 is rotating, the polishing pad 36 wound on the winding roll 22 which rotates integrally with the polishing table 10 can be used.
The polishing pad 36 can be automatically replaced by running along the upper surface of the pad for one pad and stopping. The polishing pad 36 may take up a distance (a in FIG. 1) from the end of the polishing table 10 to the center of the substrate W at the polishing position. Accordingly, the new polishing pad and the old polishing pad simultaneously contact different regions in the radial direction of the substrate W to be polished while rotating, so that the new polishing pad and the old polishing pad uniformly polish the substrate W. give.

Incidentally, the polishing pad and the winding roll may be integrated in a so-called cartridge type so that they can be attached and detached between the bearing and the coupling with one touch. Further, the winding roll driving motor may be omitted, and the polishing pad wound on the winding roll may be wound by the winding roll with the rotation of the winding roll driving motor. Further, it goes without saying that the polishing table may be circular.

FIGS. 3 and 4 show a dressing device and the like added to the polishing device shown in FIGS. 1 and 2. FIG. That is, the polishing apparatus is provided with the diamond dresser 60 and the water jet nozzle 65. Reference numeral 70 denotes a polishing liquid supply nozzle for supplying a polishing liquid (polishing liquid) onto the polishing pad, and the polishing liquid is supplied to a substantially central portion of the polishing table 10 by the polishing liquid supply nozzle 70. The diamond dresser 60 is supported by a swing arm (not shown) and is swingable.
It can be positioned at a dressing position and a standby position on the polishing table 10. A diamond electrodeposition ring 61 is fixed to the lower surface of the diamond dresser 60. The diamond electrodeposition ring 61 has a structure in which fine diamond particles are adhered to the lower surface and nickel-plated on the diamond-adhered portion, whereby the fine diamond particles are fixed by a nickel plating layer. In addition,
An SiC dresser using a ring composed of a plurality of SiC sectors may be used instead of the diamond dresser composed of the electrodeposited diamond ring. In this case, the SiC dresser has many pyramid-shaped protrusions of several tens of μm on the surface.

On the other hand, the water jet nozzle 65 extends to the approximate center of the polishing pad 36 in the width direction of the polishing pad 36, and a plurality of nozzles (spout ports) are formed on the lower surface of the water jet nozzle 65 at predetermined intervals. ing. The water jet nozzle 65 is connected to a pump 66, and the pressure of the water jet ejected from the plurality of nozzles is controlled to 490 to 294 by controlling the pump 66.
The pressure can be maintained at a predetermined value in the range of 0 kPa (5 to 30 kg / cm ² ).

In the above-described configuration, the polishing liquid (polishing liquid) containing abrasive grains is supplied to the polishing pad 36 from the polishing liquid supply nozzle 70 to polish the substrate W, and then the polishing liquid from the polishing liquid supply nozzle 70 is supplied. Then, ultrapure water is supplied as a polishing liquid from the water jet nozzle 65 to the polishing pad 36 to perform finish polishing of the substrate W. When the polishing pad 36 is started up, the surface of the polishing pad is roughened using a diamond dresser 60, and then the substrate W is polished. Then, dressing by water jet is performed using the water jet nozzle 65 during the polishing process.

When the polishing pad 36 is started, the surface of the polishing pad is roughened using a diamond dresser 60, and then the polishing is performed. And between polishing steps,
Step dressing is performed. That is, first, dressing is performed using the diamond dresser 60, and then dressing is performed using a water jet using the water jet nozzle 65.

As described above, according to the polishing apparatus of the present invention, finish polishing can be performed by supplying ultrapure water as a polishing liquid from the water jet nozzle 65 to the polishing pad 36. Further, after the polishing pad is set up by the diamond dresser, the substrate W is polished, and after the polishing step, dressing by water jet is performed, and the polishing step can be performed again. Further, dressing by a diamond dresser and dressing by a water jet can be combined during the polishing step. In the description of the embodiment, the diamond dresser is described as a contact type dresser, but a brush may be used instead of the diamond dresser.

Next, a sensor installed on the polishing table to monitor the polishing state of the substrate will be described with reference to FIGS. FIG. 5 is a sectional view of a main part showing the polishing table and the top ring. FIG. 5 shows a state in which the polishing pad 36 is held on the polishing table 10 by vacuum suction. As shown in FIG. 5, an eddy current sensor 67 is embedded in the polishing table 10. Eddy current sensor 6
7, the wiring 84 passes through the polishing table 10 and the polishing table support shaft 10a, and is connected to a controller 86 via a rotary connector (or a slip ring) 85 provided at the shaft end of the polishing table support shaft 10a. . The controller 86 includes a display device (display) 87.
It is connected to the.

An optical sensor 75 is provided adjacent to the eddy current sensor 67. The optical sensor 75 includes a light emitting element and a light receiving element, irradiates light from the light emitting element to the surface to be polished of the substrate W, and receives light reflected from the surface to be polished by the light receiving element. I have. In this case, the light emitted from the light emitting element is laser light or light from an LED. An opening 36c is formed in the polishing pad 36 at a position corresponding to the optical sensor 75. Optical sensor 7
The fifth wiring 88 passes through the inside of the polishing table 10 and the polishing table support shaft 10a, and is connected to a controller 89 via a rotary connector 85 provided at the shaft end of the polishing table support shaft 10a. The controller 89 is connected to a display device (display) 87.

The top ring 14 is connected to a motor (not shown) and has a lifting cylinder (not shown).
It is connected to. Thereby, the top ring 14
Can move up and down as shown by arrows and can rotate around its axis, so that a substrate W such as a semiconductor wafer can be pressed against the polishing pad 36 with an arbitrary pressure. The top ring 14 is connected to a top ring shaft 73, and the top ring 14 has an elastic mat 74 made of polyurethane or the like on a lower surface thereof.
A guide ring 69 for preventing the substrate W from coming off is provided on a lower outer peripheral portion of the top ring 14.

FIG. 6 is a plan view showing the polishing table 10 in which the polishing pad 36 and the sensor are embedded. As shown, the eddy current sensor 67 and the optical sensor 7
Reference numeral 5 is installed at a position passing through the center Cw of the substrate W being polished held by the top ring 14. Reference symbol _CT is the center of rotation of the polishing table 10. Eddy current sensor 6
7 and the optical sensor 75, while passing under the substrate W, respectively,
The thickness of a film such as a layer can be detected. Further, in order to shorten the detection time interval, as shown by the imaginary line in FIG. 6, one eddy current sensor 67 and one optical sensor 75 may be added, and two or more sensors may be provided on the table. good.

In the polishing apparatus having the above-described structure, the substrate W is held on the lower surface of the top ring 14, and the substrate W is pressed against the polishing pad 36 on the upper surface of the rotating polishing table 10 by a lifting cylinder. On the other hand, by flowing the polishing liquid Q from the polishing liquid supply nozzle 70, the polishing liquid Q is held on the polishing pad 36, and the polishing liquid Q exists between the surface to be polished (lower surface) of the substrate W and the polishing pad 36. Polishing is performed in a state in which the polishing is performed. During this polishing, the eddy current sensor 67
Passes immediately below the polished surface of the substrate W each time the polishing table 10 makes one rotation. In this case, since the eddy current sensor 67 is installed on a track passing through the center Cw of the substrate W,
With the movement of the sensor, the film thickness can be continuously detected on the arc-shaped orbit of the polished surface of the substrate W.

Next, using the eddy current sensor 67, the substrate W
The system principle of the eddy current type process monitor, which briefly describes the principle of detecting the film thickness of a film such as a Cu layer on the substrate W, is such that a high-frequency current is applied to a sensor coil to vortex the film such as a Cu layer on the substrate W. A current is generated, and the eddy current changes according to the film thickness, and the film thickness is detected by monitoring the combined impedance with the sensor circuit. That is,
When a high-frequency current flows through the sensor coil, an eddy current is generated in the Cu layer. Then, the impedance in the circuit is monitored. The impedance in the circuit is such that L and C of the sensor unit and R of the Cu layer are coupled in parallel, and Z changes as R in the following equation (1) changes. At this time, the resonance frequency also changes, and the end point of the CMP process can be determined by monitoring the degree of the change.

[0036]

(Equation 1) Here, Z: synthetic impedance, j: square root of −1 (imaginary number), L: inductance, f: resonance frequency, C:
Capacitance of capacitor, R: resistance of Cu layer, ω = 2π
f.

FIG. 7 is a graph showing the result of processing the detection signal of the eddy current sensor 67 obtained during polishing of a substrate W such as a semiconductor wafer by the controller 86 based on the above principle. In FIG. 7, the horizontal axis represents the polishing time, and the vertical axis represents the resonance frequency (Hz). And FIG.
FIG. 7A shows a change in the resonance frequency while the eddy current sensor 67 passes immediately below the substrate W a plurality of times during polishing.
FIG. 7B is an enlarged view of a portion A in FIG. 7A and 7B, the Cu formed on the substrate W
The case of a layer is shown.

As shown in FIG. 7A, as the polishing progresses, the signal of the eddy current sensor 67 is transmitted to the controller 8.
The value processed in 6 gradually decreases. That is, as the thickness of the Cu layer decreases, the resonance frequency, which is a value obtained by processing the signal of the eddy current sensor 67 by the controller 86, decreases. In FIG. 7A, the initial 6800 (H
It gradually decreases from z). Therefore, if the value of the resonance frequency when the Cu layer is removed except for the wiring portion is checked in advance, by monitoring the value of the resonance frequency,
The end point of the CMP process can be detected. In FIG. 7A, the value of the resonance frequency when the Cu layer is removed except for the wiring portion is 6620 (Hz). If a certain frequency just before the end point of polishing when the Cu layer has a predetermined thickness is left is set as a threshold value, polishing is performed under the first polishing condition until the threshold value is reached. After reaching the value, the polishing is performed under the second polishing condition, the Cu layer and the barrier metal layer are completely removed, and when the polishing end point is reached, the CMP process may be terminated.

Next, the principle of detecting the thickness of the Cu layer on the substrate W using the optical sensor 75 will be briefly described. During the above-mentioned polishing, the optical sensor 75 passes immediately below the surface to be polished of the substrate W every time the polishing table makes one rotation, so that the light from the light emitting element of the optical sensor 75
Then, the light reaches the surface to be polished of the substrate W through the opening 36a of the polishing pad 36, the light reflected from the surface to be polished is received by the light receiving element, and the film thickness of the surface to be polished is measured.

The principle of film thickness measurement applied to an optical sensor utilizes the interference of light caused by the film and its adjacent medium. When light is incident on a thin film on a substrate such as a semiconductor wafer, a part of the light is first reflected on the surface of the film, and the rest is transmitted. Part of the transmitted light is further reflected on the substrate surface, and the rest is transmitted, but is absorbed when the substrate is metal. Interference is caused by the phase difference between the light reflected from the surface of the film and the light reflected from the substrate surface. When the phases match, they are mutually strengthened, and when they are opposite, they are weakened. That is, the reflection intensity changes according to the wavelength, the film thickness, and the refractive index of the incident light. The light reflected by the substrate is separated by a diffraction grating or the like, and the profile in which the intensity of the reflected light at each wavelength is plotted is analyzed to measure the thickness of the film formed on the substrate.

As described above, by mounting two types of sensors for measuring the film thickness on the polishing apparatus, the signal of the eddy current sensor 67 is maintained until the film such as the Cu layer on the substrate W becomes a thin film having a predetermined thickness. The thickness of the thin film is monitored by processing the signal of the optical sensor 75 when the optical sensor 75 detects the film thickness when the optical sensor 75 becomes a thin film having a predetermined thickness. Monitor. This makes it possible to accurately detect that the Cu layer has been removed except for the wiring portion by using the optical sensor 75 having high measurement sensitivity for the thin film, and to determine the end point of the CMP process. Of course, the eddy current sensor 67 and the optical sensor 75 can be used together until the end point of the CMP process. That is, it is detected by processing and monitoring the signals from both the eddy current sensor 67 and the optical sensor 75 that the thin film has a predetermined thickness, and the Cu layer is removed except for the wiring portion. The signals from both the eddy current sensor 67 and the optical sensor 75 are processed and detected by monitoring.
You can also determine the end point of the process. In the above description, the Cu layer was described as a film to be polished,
In the case of an insulating film such as O ₂ , the film thickness can be similarly detected.

The embodiment shown in FIGS. 1 to 7 shows an example in which the present invention is applied to a polishing apparatus in which the polishing table is rotated (rotated). The present invention can also be applied to a polishing apparatus that performs a so-called scroll motion. next,
The polishing table for performing the scroll movement will be described with reference to FIGS. FIG. 8 is a cross-sectional view of the polishing table and the motor unit, FIG. 9A is a plan view showing a portion supporting the polishing table, and FIG.
FIG. 4 is a cross-sectional view taken along a line A. FIG. 8 shows a state in which the polishing pad 36 is held on the polishing table 130 by vacuum suction. As shown in FIG. 8, a circular polishing table 130 is provided.
Is a cylindrical casing 1 containing a motor 133 therein.
34. That is, a support plate 135 is provided on the upper part of the casing 134 so as to protrude annularly inward. The support plate 135 is formed with three or more support portions 136 in the circumferential direction. 1
36. That is, a plurality of recesses 138 and 139 are formed at equal intervals in the circumferential direction at positions corresponding to the upper surface of the support portion 136 and the lower surface of the polishing table 130.
Each of the recesses 138 and 139 has a bearing 14.
0, 141 are attached (see FIG. 9B). The bearings 140 and 141 have two shafts 142 and 1 shifted by a distance "e" as shown in FIG. 9B.
A connecting member 144 having a shaft 43 is mounted by inserting the end of each shaft body, whereby the polishing table 130 has a radius “e”.
A circular translational motion (scrolling motion) is possible along the circle.

As shown in FIG. 8, the polishing table 1
A recess 148 is formed on the lower surface side of the center of the motor 30 to receive a drive end 146 eccentrically provided at the upper end of the main shaft 145 of the motor 133 via a bearing 147. Main shaft 145
Similarly, the eccentric amount of the drive end 146 is also “e”. The motor 133 is a motor chamber 1 formed in the casing 134.
49, and its main shaft 145 has upper and lower bearings 150,
151. Balancers 152a and 152 for balancing the load due to eccentricity are provided on the main shaft 145.
b is provided.

The polishing table 130 holds the substrate W to be polished.
The diameter is set to be slightly larger than the value obtained by adding twice the amount of eccentricity “e” to the diameter of, and two plate members 153 and 154 are joined. A space 155 is formed between the plate members 153 and 154. The space 155 communicates with a vacuum source such as a vacuum pump and also communicates with a plurality of vacuum suction holes 157 opened on the upper surface. I have. And
When the space 155 communicates with the vacuum source, the polishing pad 36 can be vacuum-sucked by the vacuum suction hole 157. Top ring as pressing means (not shown)
Is structurally the same as that shown in FIGS. 1 and 5 except that the rotation speed is slow.

In the above configuration, the polishing table 130
The substrate W is pressed against the polishing pad 36 with a constant pressure by the top ring 14 while rotating the top ring 14 (see FIG. 1 and FIG. 5) while causing the top ring 14 (see FIGS. 1 and 5) to rotate. The surface to be polished of the substrate W is polished to a flat and mirror surface while supplying more polishing liquid. At this time, by holding the polishing pad 36 on the upper surface of the polishing table 130 by suction, the polishing pad 36 is prevented from moving (shifting) with respect to the polishing table 130 during polishing. Further, between the polishing pad 36 and the substrate W,
A minute relative translational circular motion having a radius "e" occurs, and the surface to be polished of the substrate W is uniformly polished over the entire surface. When the positional relationship between the polished surface and the polished surface is the same, the polished surface is affected by a local difference. Polishing is prevented only at the place.

Since the polishing table 130 shown in FIGS. 8 and 9 is of a scroll motion (circular translation motion) type, the size of the polishing table 130 is larger than the size of the substrate W by an amount of eccentricity "e". Should be fine. Therefore, the installation area can be significantly reduced as compared with a turntable type polishing table. Polishing table 1
8, the polishing table 130 can be supported at a plurality of positions on its edge as shown in FIG. 8, and the polishing table 130 has a higher flatness than a turntable type polishing table that rotates at a high speed. Can be performed.

In the polishing tables shown in FIGS. 8 and 9, the polishing liquid can be supplied from the polishing table side. In this case, a polishing liquid supply source is connected to the space 155, and a through hole is provided in the polishing pad 36 at a position corresponding to the hole 157. With this configuration, the polishing liquid is supplied to the space 155 and the hole 1.
The polishing liquid can be supplied to the upper surface of the polishing pad 36 via the through holes of the polishing pad 57 and the polishing pad 36.

FIGS. 10 and 11 are views showing a main part of a polishing apparatus according to a second embodiment of the present invention. FIG. 10 is a schematic sectional view, and FIG. 11 is a plan view. As shown in FIG. 10, the polishing apparatus includes a disc-shaped polishing table 10.
A table driving motor 12 for rotatingly driving the polishing table 10, and a substrate W such as a semiconductor wafer, which is an object to be polished, which is disposed above the polishing table 10 so as to be movable up and down. And a rotatable top ring 14 that detachably holds the top ring 14.

A support plate 16 is mounted on the lower surface of the polishing table 10, and a winding roll 22 and a take-up roll 30 are supported on the support plate 16 via bearings 20 and 28. The polishing table 10 includes a table driving motor 12
(Rotation). While the substrate W is being polished, the take-up roll 30 is rotated by driving the take-up roll drive motor 34, and the polishing pad 36 is moved to the polishing table 10.
Along the arrow. A fluid communication passage 10c is formed in the polishing table 10, and
The communication passage 10c is connected to a fluid source such as a compressed air source via a rotary connector 85. The communication passage 10c is opened on the upper surface of the polishing table 10, and when a fluid is supplied to the communication passage 10c, a fluid such as compressed air is ejected from the upper surface of the polishing table 10.

In the above-described configuration, when a fluid such as compressed air is supplied from the fluid source to the communication passage 10c during the movement of the polishing pad 36, the fluid is ejected from the upper surface of the polishing table 10 toward the polishing pad 36. Thereby, the frictional force between the polishing table 10 and the polishing pad 36 is reduced, and the movement of the polishing pad 36 on the polishing table 10, that is, the automatic replacement of the polishing pad 36 is performed smoothly. Further, by changing the pressure of the fluid ejected from the communication passage 10c toward the polishing pad 36 in accordance with the radial position of the substrate W, the pressing force acting between the substrate W and the polishing pad 36 is changed to the central portion of the substrate W. It can be varied between the outer circumference. That is, the polishing pressure of the substrate W can be arbitrarily changed according to the radial position of the substrate W, and the polishing profile can be controlled.

FIG. 10 shows an air cylinder 51 for vertically moving the top ring 14, a swing arm 52 for swingably supporting the top ring 14, and a motor 53 for swinging the swing arm 52. ing. A motor 54 for rotating (rotating) the top ring 14 is also illustrated.

In the embodiment shown in FIG. 10, the pad roughness detecting mechanism 55 is located downstream of the polishing surface (the winding roll 30).
Side). The pad roughness detection mechanism 55 irradiates the polishing surface on the polishing pad 36 with light, receives light reflected from the polishing surface, and detects the roughness of the polishing pad 36 based on the intensity of the reflected light. The pad roughness detecting mechanism 55 is a controller 5
When the pad roughness detection mechanism 55 detects wear (consumption) of the polishing pad 36, the controller 5
By sending a signal to 6 and driving the take-up roll drive motor 34, the take-up roll 30 is rotated to wind up the polishing pad 36 by a predetermined length. The polishing pad 36
A UV irradiation source 57 is provided below the space. When a fixed abrasive polishing pad is used as the polishing pad 36, U
By irradiating the polishing pad 36 with ultraviolet rays from the V irradiation source 57, the binder fixing the abrasive grains is degraded, and the abrasive grains can be easily released from the polishing pad 36.

In this embodiment, the polishing pad 36 is constituted by a plurality of polishing pads which are divided in the longitudinal direction. That is, as shown in FIG. 11, two polishing pads 36a disposed on both sides and one polishing pad 3 disposed in the center are provided on a common winding roll 22 and a winding roll 30.
6b is provided to provide a plurality of polishing surfaces on the polishing table 10. By moving the top ring 14 over the two types of polishing pads 36a and 36b, when the substrate W is at the center of the polishing table 10, the substrate W is polished only by the polishing pad 36b, and the substrate W is polished. When the substrate W is located on the outer periphery of the table 10, the polishing of the substrate W is mainly performed by the polishing pad 36a. With the divided polishing pad of the present embodiment, multi-stage polishing of the substrate W can be performed under different conditions on one polishing table. At that time, the rotation speed of the polishing table 10 may be changed during the polishing, or the winding speed of the polishing pads 36a and 36b may be changed during the polishing. Further, the substrate W is disposed so as to straddle the plurality of polishing pads 36a and 36b.
Polishing may be performed by bringing different polishing pads into contact with the center part and the outer peripheral part.

The polishing liquid supply nozzle 70 is connected to the polishing pad 36a.
The polishing liquid supply nozzle 70 is provided with a plurality of openings so as to supply the polishing liquid to the corresponding positions of the polishing pad 36a and the polishing pad 36b, respectively. I have. A high-pressure pure water spray or atomizer 71 is provided above the polishing table 10 adjacent to the polishing liquid supply nozzle 70, and a high-pressure pure water or a gas-liquid mixed fluid (pure water and nitrogen atomized) is provided on the polishing pad. ) Can be sprayed. Thus, every time the substrate W is polished, high-pressure pure water spray or an atomizer 71 can be used to spray high-pressure pure water or a gas-liquid mixed fluid onto the polishing surface, thereby performing cleaning and dressing (dressing) of the polishing surface. Further, the polishing composition on the polishing surface may be removed as a part of the dressing by the brush 72 to which a nylon brush is attached.

In this embodiment, as shown in FIG. 11, a gap g is provided between the polishing pad 36a and the polishing pad 36b. Light from an optical sensor 75 (see FIG. 5) composed of a light emitting element and a light receiving element embedded in the polishing table 10 is applied to the polishing pad 36a and the polishing pad 36.
b and reaches the substrate W through the gap between them, so that the film thickness on the substrate W can be measured when the substrate W passes between the polishing pad 36a and the polishing pad 36b. . Then, the film thickness of the substrate W is measured by the optical sensor 75, and after the film thickness of the substrate W reaches a predetermined value, control is performed so as to change the number of rotations of the top ring, the number of rotations of the polishing table, and the pressing force of the substrate W. May be. When a thin polishing pad is used, light, sound waves (acoustic emission), electromagnetic waves, X-rays, and other media pass through the polishing pad, so that these media are irradiated from the side of the polishing table toward the substrate W. Thus, the thickness of the substrate W can be detected.

Next, the structure around the polishing surface of the polishing pad 36 will be described. If polishing debris, fine particles, and the like generated by the polishing adhere to the roller portion and other rotary driving portions, the driving is adversely affected. In the polishing apparatus according to the present embodiment, the part where the members slide is made of resin, or the sliding part is coated, or the part that generates dust is exhausted, or the part that generates dust has a labyrinth structure. And various other measures. This prevents the fine particles from scattering or sticking to the drive unit. Further, the pressure in the polishing space in which the polishing table, the polishing pad and the top ring are arranged is decreased in the order of the position of the substrate W before polishing, the polishing position of the substrate W, and the position of the substrate W after polishing. I am trying to do it.

FIGS. 12 and 13 are views showing the main parts of a polishing apparatus according to a third embodiment of the present invention.
Is a schematic sectional view, and FIG. 13 is a plan view. In the present embodiment, the polishing table 10 is of a type that reciprocates linearly in the horizontal direction. The polishing table 10 is a rectangular flat table, and the polishing table 10 is reciprocally movable along a guide rail 80. A linear motor 81 is provided at a portion supporting the polishing table 10.
Is adapted to reciprocate linearly along the guide rail 80. Note that a ball screw may be used instead of the linear motor. Other configurations are the same as those of the embodiment shown in FIGS. In the embodiments of FIGS. 10 to 13, the polishing pad may be fixed to the polishing table by vacuum suction.

FIG. 14 is a plan view showing the arrangement of each part of the polishing apparatus according to the present invention. FIG. 15 is a diagram showing a relationship between the top ring 14 and the polishing tables 10 and 130. FIGS. 1 to 13 show the polishing apparatus.
A polishing pad made of a fixed-abrasive polishing pad or a foamed polyurethane, which can be exchanged automatically, is used. The polishing apparatus shown in FIG. 14 includes four load / unload stages 222 on which a wafer cassette 221 for stocking a large number of substrates W such as semiconductor wafers is placed. The load / unload stage 222 may have a mechanism that can move up and down. The traveling mechanism 223 is set so that each of the wafer cassettes 221 on the load / unload stage 222 can be reached.
A transfer robot 224 having two hands is disposed on the transfer robot 224.

The lower hand of the two hands in the transfer robot 224 is used only when receiving the substrate W from the wafer cassette 221, and the upper hand is used only when returning the substrate W to the wafer cassette 221. . This is an arrangement in which the clean wafer after cleaning is placed on the upper side so that the wafer is not further contaminated. The lower hand is a suction hand that sucks the wafer by vacuum.
The upper hand is a drop-down hand that holds the peripheral edge of the wafer. The suction-type hand accurately transports the wafer regardless of the displacement of the wafer in the cassette, and the drop-down hand does not collect dust unlike vacuum suction, so that the wafer can be transported while maintaining the cleanness of the back surface of the wafer. Two cleaning machines 225 and 226 are arranged on the side opposite to the wafer cassette 221 with the traveling mechanism 223 of the transfer robot 224 as the axis of symmetry. Each of the washing machines 225 and 226 is arranged at a position where the hand of the transfer robot 224 can reach. In addition, two washing machines 22
5, 226, 229, 229, and 2 at positions where the robot 224 can reach between
A wafer station 270 with 30 is arranged. The washing machines 225 and 226 have a spin-drying function of rotating the substrate at a high speed to dry the substrate, so that it is possible to cope with two-stage cleaning and three-stage cleaning of the substrate without replacing modules.

The washing machines 225 and 226 and the mounting table 22
7, 228, 229, and 230, and a partition wall 28 for separating the cleanliness of an area A where the wafer cassette 221 and the transfer robot 224 are arranged.
4 are provided, and a shutter 231 is provided in an opening of a partition for transferring the substrate W between the regions.
Transfer robot 2 having a washing machine 225 and two hands at positions that can reach the three mounting tables 227, 229, and 230
80 are disposed, and the washing machine 226 and three mounting tables 2 are provided.
A transfer robot 281 having two hands is arranged at a position where the transfer robot 28 can reach the positions 28, 229 and 230.

The mounting table 227 is provided with a transfer robot 224.
The transfer robot 280 is used to transfer the substrate W to and from the transfer robot 280, and includes a sensor 291 for detecting the presence or absence of the substrate W. The mounting table 228 is used to transfer the substrate W between the transfer robot 224 and the transfer robot 281 and includes a sensor 292 for detecting the presence or absence of the substrate W. The mounting table 229 is moved from the transfer robot 281 to the transfer robot 28.
The substrate W is used to transport the substrate W, and includes a sensor 293 for detecting the presence or absence of the substrate W and a rinsing nozzle 295 for preventing the substrate W from drying or cleaning. Mounting table 230
Is used to transfer the substrate W from the transfer robot 280 to the transfer robot 281, and includes a sensor 294 for detecting the presence or absence of the substrate W and a rinse nozzle 296 for preventing the substrate W from drying or cleaning. Mounting tables 229 and 230
Are arranged in a common waterproof cover, and a shutter 297 is provided in the opening of the cover for transport. The mounting table 229 is located on the mounting table 230, and the substrate after cleaning is mounted on the mounting table 229, and the substrate before cleaning is mounted on the mounting table 230, thereby preventing the contamination due to the drop of the rinse water. In FIG. 14, the sensors 291, 292, 29
3, 294, rinsing nozzles 295, 296, and shutter 297 are schematically shown, and their positions and shapes are not shown accurately.

The upper hands of the transfer robot 280 and the transfer robot 281 are used to transfer the once washed substrate W to the washing machine or the mounting table of the wafer station 270, and the lower hand is never used for cleaning. It is used for transporting the unprocessed substrate W and the substrate W before being polished. By taking the substrate in and out of the reversing machine with the lower hand, the upper hand is not contaminated by drips of rinsing water from the upper wall of the reversing machine. The washing machine 282 is arranged at a position where the hand of the transfer robot 280 can reach so as to be adjacent to the washing machine 225.
Further, the transfer robot 28 is positioned adjacent to the washing machine 226.
The washing machine 283 is arranged at a position where one hand can reach. The washing machines 225, 226, 282, 283 and the mounting tables 227, 228, 2 of the wafer station 270.
All of the transfer robots 29 and 230 and the transfer robots 280 and 281 are arranged in the area B and are adjusted to a pressure lower than the pressure in the area A. The cleaning machines 282 and 283 are cleaning machines capable of cleaning both sides.

The present polishing apparatus has a housing 266 surrounding each device.
6 is a partition 284, a partition 285, a partition 286, a partition 28
7 and a plurality of rooms (including a region A and a region B). A polishing chamber separated from the region B by the partition 287 is formed, and the polishing chamber is further divided into two regions C and D by the partition 267. Each of the two areas C and D has 2
Polishing table and one substrate W
One top ring is arranged for polishing while pressing against the polishing table. That is, the polishing table 10 (see FIG. 1) and the polishing table 1
30 (see FIG. 8), and a polishing table 10 (see FIG.
), A polishing table 130 (see FIG. 8), and a top ring 14 in a region C, and a top ring 14 in a region D.
A polishing liquid supply nozzle 70 for supplying a polishing liquid to the polishing table 14 in the region C, and a dresser 60 (see FIG. 3) for dressing the polishing table 10 are arranged. A polishing liquid supply nozzle 70 for supplying a polishing liquid to the polishing table 10 in the region D;
Dresser 60 for dressing (see FIG. 3)
And are arranged. A dresser 268 for dressing the polishing table 130 in the region C;
A dresser 269 for dressing the polishing table 130 in the region D is provided. Instead of the polishing tables 130, 130, a wet type substrate film thickness measuring device may be installed. In that case, the film thickness of the substrate immediately after polishing can be measured, and further polishing of the substrate can be performed, and the polishing process for the next substrate can be controlled using the measured value.

As shown in FIG. 14, a reversing device 278 for reversing the substrate W is disposed at a position where the hand of the transfer robot 280 can reach in the area C separated from the area B by the partition wall 287. ing. In the area D, a reversing device 278 ′ for reversing the substrate W is disposed at a position where the hand of the transfer robot 281 can reach. The partition 287 that separates the region B from the regions C and D is provided with two openings for transporting the substrate, and one opening is used for transferring the substrate W to and from the reversing device 278. The other opening is used for transferring the substrate W to / from the reversing device 278 '. Shutters 245 and 246 are provided at each opening of the partition.

The reversing device 278 and the reversing device 278 ′
Each includes a chuck mechanism for chucking the substrate W, an inversion mechanism for inverting the front and back surfaces of the substrate W, and a wafer presence / absence detection sensor for checking whether the substrate W is chucked by the chuck mechanism. The substrate W is transported to the reversing device 278 by the transport robot 280, and the substrate W is transported to the reversing device 278 ′ by the transport robot 281.

As shown in FIGS. 14 and 15, the reversing machines 278 and 278 'and the top ring 14 (region C
A rotary transporter 277 for transporting the substrate W between the cleaning chamber (area B) and the polishing chamber (areas C and D) is disposed below the inner ring (inside) and the top ring 14 (in area D). The rotary transporter 277 is provided with four stages on which the substrates W are placed at even positions, and a plurality of substrates W can be mounted at the same time.

When the center of the stage of the rotary transporter 277 and the center of the wafer held by the inverter 278 or 278 ′ are in phase with each other, the substrate W transferred to the reversing device 278 or 278 ′ is rotated. When the lifter 279 or 279 ′ installed below the 277 rises, it is transferred to the lifter 279 or 279 ′. The substrate W transferred to the lifter 279 or 279 '
When the lifter 279 or 279 ′ is lowered, it is transferred to the rotary transporter 277. The substrate W placed on the stage of the rotary transporter 277 is conveyed below the top ring 14 (in the area C) and the top ring 14 (in the area D) by rotating the rotary transporter 277 by 90 °. . At this time, top ring 1
4 (in the area C) or the top ring 14 (in the area D) has been swung above the rotary transporter 277 in advance.

When the center of the top ring 14 (in the area C) or the center of the top ring 14 (in the area D) is in phase with the center of the substrate mounted on the rotary transporter 277, the lower part of the rotary transporter 277 is The substrate W is moved from the rotary transporter 277 by the pusher 290 or 290 '
Then, only the substrate W is transferred to the top ring 14 (in the area C) or the top ring 14 (in the area D).

The substrate transferred to the top ring 14 (in the area C) or the top ring 14 (in the area D) is sucked by the vacuum suction mechanism of the top ring, and the substrate is polished by the polishing table 10 (in the area C) or by polishing. Table 10 (area D
(Inner) is transported while being sucked. Then, the substrate is polished on a polishing surface including a polishing pad or a fixed abrasive pad of the present invention, which is automatically exchangeably mounted on the polishing table 10. By using the polishing pad or the fixed abrasive pad of the foamed polyurethane or the like of the present invention, a good surface to be polished with few scratches can be obtained even in one-step polishing. In the present polishing apparatus, the above-mentioned second polishing tables 130, 130 are further arranged at positions where the top rings 14, 14 can reach, respectively. Thus, after the substrate W has been polished by the first polishing tables 10 and 10, the substrate W can be finally polished by the finishing polishing pads held by the second polishing tables 130 and 130. For polishing tables for finishing, SUBA400 or Po
Pure water finish polishing is performed while supplying pure water to a polishing pad such as Lytex (both made by Rodale Nitta), or polishing is performed by supplying a slurry.

Depending on the type of film attached to the substrate W, the second
After being polished by the first and second polishing tables 130 and 130, the first and second polishing tables 10 and 10 may be used. In this case, since the polishing surface of the second polishing table has a small diameter, a fixed abrasive pad, which is more expensive than a polishing pad made of foamed polyurethane or the like, is provided so as to be automatically replaceable. Running cost can be reduced by providing a polishing pad made of foamed polyurethane or the like having a shorter service life than the fixed abrasive pad on the first polishing table so as to be automatically replaceable and performing finish polishing. Thus, the first
By setting the polishing table to a polishing pad of foamed polyurethane or the like and the second polishing table to a fixed abrasive pad,
An inexpensive polishing table can be supplied. This is because the price of fixed abrasive pads is higher than that of polishing pads such as polyurethane foam, and the larger the diameter, the higher the price. Further, since the life of the polishing pad is shorter than that of the fixed abrasive pad, the life is longer when the polishing is performed with a light load such as the finish polishing. Further, when the diameter is large, the contact frequency can be dispersed, and the life is prolonged. Therefore, the maintenance cycle is extended, and the productivity is improved.

[0071]

As described above, according to the present invention,
Without stopping the CMP process, the polishing pad wound on the roll moving integrally with the polishing table is moved along the upper surface of the polishing table for a predetermined distance, for example, for one pad, even during the movement such as the rotation of the polishing table. The polishing pad can be automatically replaced by running and stopping. Further, according to the present invention, the polishing pad can be fed out from the polishing pad supply means, the polishing pad fed out by the polishing pad holding means can be held, and the polishing pad can be stretched on the polishing table. Therefore, the polishing pad can be automatically replaced even during the operation of the polishing table.

[Brief description of the drawings]

FIG. 1 is a front view showing a main part of a polishing apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a main part of the polishing apparatus according to the first embodiment of the present invention.

FIG. 3 is a front view of the polishing apparatus shown in FIGS. 1 and 2 with a dressing apparatus and the like added thereto.

FIG. 4 is a plan view in which a dressing device and the like are added to the polishing device shown in FIGS. 1 and 2;

FIG. 5 is a sectional view of a principal part showing a polishing table and a top ring, and shows a state in which a polishing pad is held on the polishing table by vacuum suction;

FIG. 6 is a plan view showing a polishing table in which a polishing pad and a sensor are embedded.

7 (a) and 7 (b) are graphs showing the results of processing the detection signal of an eddy current sensor obtained during polishing of a substrate by a controller, and FIG. FIG. 7B is an enlarged view of a portion A in FIG. 7A, showing a change in the resonance frequency while the eddy current sensor passes immediately below the substrate a plurality of times.

FIG. 8 is a sectional view of a polishing table and a motor unit.

9A is a plan view showing a portion supporting a polishing table, and FIG. 9B is a cross-sectional view taken along line AA of FIG. 9A.

FIG. 10 is a schematic sectional view showing a main part of a polishing apparatus according to a second embodiment of the present invention.

FIG. 11 is a plan view showing a main part of a polishing apparatus according to a second embodiment of the present invention.

FIG. 12 is a schematic sectional view showing a main part of a polishing apparatus according to a third embodiment of the present invention.

FIG. 13 is a plan view showing a main part of a polishing apparatus according to a third embodiment of the present invention.

FIG. 14 is a plan view showing an arrangement configuration of each part of the polishing apparatus according to the present invention.

FIG. 15 is a diagram showing a relationship between a top ring and a polishing table.

FIG. 16 is a front view showing a conventional polishing apparatus.

FIG. 17 is a plan view showing a conventional polishing apparatus.

FIG. 18 is a view showing another conventional polishing apparatus.

FIG. 19 is a view showing still another conventional polishing apparatus.

[Explanation of symbols]

 10, 130 Polishing table 10a Polishing table support shaft 10c Communication path 12 Table driving motor 14 Top ring 16, 18, 135 Support plate 20, 28, 147, 150, 151 Bearing 22 Winding roll 24, 32 Coupling 26 Winding Roll drive motor 30 Take-up roll 34 Take-up roll drive motor 36, 36a, 36b Polishing pad 40 Suction holding part 42, 86, 89 Controller 44, 84, 88 Wiring 46 Rotary joint 51 Air cylinder 52 Swing arm 53, 54, 133 Motor 55 Pad roughness detection mechanism 56 Controller 57 UV irradiation source 60 Diamond dresser 61 Diamond electrodeposition ring 65 Water jet nozzle 66 Pump 67 Eddy current sensor 69 Guide ring 70 Polishing liquid supply Slip 71 High-pressure pure water spray or atomizer 72 Brush 73 Top ring shaft 74 Elastic mat 75 Optical sensor 80 Guide rail 81 Linear motor 85 Rotary connector (slip ring) 87 Display device (Display) 134 Casing 136 Support section 138, 139, 148 Concave portions 140, 141 Bearings 142, 143 Shaft body 144 Connecting member 145 Main shaft 146 Drive end 152a, 152b Balancer 153, 154 Plate member 155 Space 157 Vacuum suction hole 221 Wafer cassette 222 Load unload stage 223 Traveling mechanism 224, 280, 281 Transfer robot 225, 226, 282, 283 Cleaning machine 227, 228, 229, 230 Mounting table 231, 245, 246, 297 Shutter 266 c Zing 267, 284, 285, 286, 287 Partition wall 268, 269 Dresser 270 Wafer station 277 Rotary transporter 278, 278 'Inverter 279, 279' Lifter 280, 281 Transport robot 290, 290 'Pusher 291, 292, 293, 294 Presence detection sensor 295,296 Rinse nozzle W Substrate

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/304 622 H01L 21/304 622F 622H 622R F-term (Reference) 3C034 AA13 AA19 BB73 BB93 CA09 3C058 AA07 AA09 AA11 AA14 AA16 AA19 AB01 AB04 AC04 BA01 BA09 BB02 BC01 BC02 CA01 CB03 DA12 DA17 3C063 AA03 AB07 BH27 EE26 FF30

Claims (12)

[Claims] 1. A polishing table which rotates or circulates, a top ring which is arranged above and below the polishing table so as to be movable up and down, and which holds a polishing object in a detachable manner. A polishing apparatus, comprising: a pair of rolls; and a polishing pad wound around one of the pair of rolls and wound around the other and running along an upper surface of the polishing table. 2. At least on the winding side of the roll,
2. The polishing apparatus according to claim 1, wherein a roll driving motor capable of wirelessly or wire-controlled rotation is connected. 3. The polishing apparatus according to claim 1, wherein the polishing pad comprises a foamed polyurethane pad, a suede type pad, or a fixed abrasive pad. 4. A polishing apparatus according to claim 1, further comprising a pad roughness detecting mechanism for detecting roughness of said polishing pad.
The polishing apparatus according to claim 1. 5. The polishing apparatus according to claim 4, wherein the roll driving motor is driven based on a detection value of the pad roughness detection mechanism. 6. The polishing apparatus according to claim 1, wherein said polishing pad comprises a plurality of polishing pads divided along a winding direction. 7. A polishing table which performs a predetermined movement; a top ring which is disposed above and below the polishing table so as to be movable up and down; and which detachably holds an object to be polished; and a polishing pad which holds and holds the polishing pad. Polishing pad supply means capable of being fed out; polishing pad holding means for holding the polishing pad fed out from the polishing pad supply means and stretching the polishing pad on the polishing table so as to be able to move integrally with the polishing table; A polishing apparatus comprising: 8. The polishing apparatus according to claim 7, wherein said polishing pad supply means comprises a winding roll around which a long polishing pad is wound. 9. The polishing apparatus according to claim 7, wherein said polishing pad holding means comprises a winding roll for winding said polishing pad. 10. The polishing apparatus according to claim 1, wherein the polishing table has a suction holding unit that holds the polishing pad by suction. 11. The polishing apparatus according to claim 9, wherein a roll driving motor capable of wirelessly or wiredly controlling rotation is connected to the winding roll. 12. The polishing apparatus according to claim 7, wherein the predetermined movement of the polishing table is a rotation, a circulation, or a reciprocating linear movement.