JP2002084027A - 半導体発光装置 - Google Patents

半導体発光装置

Info

Publication number
JP2002084027A
JP2002084027A JP2000271301A JP2000271301A JP2002084027A JP 2002084027 A JP2002084027 A JP 2002084027A JP 2000271301 A JP2000271301 A JP 2000271301A JP 2000271301 A JP2000271301 A JP 2000271301A JP 2002084027 A JP2002084027 A JP 2002084027A
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor light
light
emitting device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000271301A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002084027A5 (enExample
Inventor
Hiroshi Yoshida
浩 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000271301A priority Critical patent/JP2002084027A/ja
Priority to US09/947,979 priority patent/US6528825B2/en
Publication of JP2002084027A publication Critical patent/JP2002084027A/ja
Publication of JP2002084027A5 publication Critical patent/JP2002084027A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2000271301A 2000-09-07 2000-09-07 半導体発光装置 Pending JP2002084027A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000271301A JP2002084027A (ja) 2000-09-07 2000-09-07 半導体発光装置
US09/947,979 US6528825B2 (en) 2000-09-07 2001-09-06 Semiconductor emission apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000271301A JP2002084027A (ja) 2000-09-07 2000-09-07 半導体発光装置

Publications (2)

Publication Number Publication Date
JP2002084027A true JP2002084027A (ja) 2002-03-22
JP2002084027A5 JP2002084027A5 (enExample) 2007-02-15

Family

ID=18757610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000271301A Pending JP2002084027A (ja) 2000-09-07 2000-09-07 半導体発光装置

Country Status (2)

Country Link
US (1) US6528825B2 (enExample)
JP (1) JP2002084027A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022918A (ja) * 2002-06-19 2004-01-22 Fuji Photo Film Co Ltd レーザモジュールの製造方法
JP2004288674A (ja) * 2003-03-19 2004-10-14 Fuji Xerox Co Ltd 面発光型半導体レーザおよびそれを用いた光通信システム
JP2006040987A (ja) * 2004-07-23 2006-02-09 Nichia Chem Ind Ltd 半導体レーザパッケージ
JP2007027471A (ja) * 2005-07-19 2007-02-01 Fuji Xerox Co Ltd 半導体レーザ装置およびこれを用いた光送信装置
WO2009081470A1 (ja) * 2007-12-21 2009-07-02 Mitsubishi Electric Corporation レーザ光源モジュール
US20140241388A1 (en) * 2011-11-30 2014-08-28 Panasonic Corporation Nitride semiconductor light-emitting system
WO2016060069A1 (ja) * 2014-10-15 2016-04-21 株式会社小糸製作所 半導体レーザー装置
JP2020057760A (ja) * 2018-10-01 2020-04-09 創威光電股▲ふん▼有限公司 光学サブアセンブリモジュール及び光学サブアセンブリモジュールのキャップ

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4514376B2 (ja) * 2001-09-27 2010-07-28 シャープ株式会社 窒化物半導体レーザ装置
US6829264B2 (en) * 2002-05-10 2004-12-07 Intel Corporation Laser frequency aging compensation
US7061949B1 (en) * 2002-08-16 2006-06-13 Jds Uniphase Corporation Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth
US7061025B2 (en) * 2003-03-10 2006-06-13 Mccolloch Lawrence R Optoelectronic device packaging assemblies and methods of making the same
JP2004289010A (ja) * 2003-03-24 2004-10-14 Sony Corp 発光装置
JP3655916B2 (ja) * 2003-04-04 2005-06-02 新光電気工業株式会社 半導体装置用キャップ
EP1774594A2 (en) * 2004-07-27 2007-04-18 Koninklijke Philips Electronics N.V. Light emitting diode assembly
TW200832851A (en) * 2007-01-29 2008-08-01 Truelight Corp Package structure for horizontal cavity surface-emitting laser diode with light monitoring function
JP4492733B2 (ja) * 2008-05-27 2010-06-30 ソニー株式会社 発光装置及び発光装置の製造方法
DE102010015197A1 (de) 2010-04-16 2012-01-19 Osram Opto Semiconductors Gmbh Laserlichtquelle
US10409005B2 (en) * 2018-01-08 2019-09-10 Elenion Technologies, Llc Reducing back reflection in a photodiode
DE102019215098A1 (de) * 2019-10-01 2021-04-01 Robert Bosch Gmbh Mikromechanisch-optisches Bauteil und Herstellungsverfahren

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01211988A (ja) * 1988-02-19 1989-08-25 Oki Electric Ind Co Ltd 半導体レーザ装置
JPH0338652U (enExample) * 1989-08-23 1991-04-15
JPH0418770A (ja) * 1990-05-11 1992-01-22 Omron Corp 光源器
JPH10193679A (ja) * 1997-01-08 1998-07-28 Hitachi Ltd レーザ光源装置及びレーザプリンタ
JPH11224969A (ja) * 1997-12-05 1999-08-17 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH11274650A (ja) * 1998-03-26 1999-10-08 Matsushita Electric Ind Co Ltd 半導体レーザおよびそれを用いた光送信モジュール

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645684A (ja) 1992-07-21 1994-02-18 Rohm Co Ltd 光学装置及びそれを用いたレーザービーム光源
JP2978688B2 (ja) 1993-09-22 1999-11-15 株式会社東芝 光学装置及び画像形成装置
US5835514A (en) * 1996-01-25 1998-11-10 Hewlett-Packard Company Laser-based controlled-intensity light source using reflection from a convex surface and method of making same
US5925898A (en) * 1996-07-18 1999-07-20 Siemens Aktiengesellschaft Optoelectronic transducer and production methods
US5715337A (en) * 1996-09-19 1998-02-03 The Mirco Optical Corporation Compact display system
JP2980121B2 (ja) 1997-09-22 1999-11-22 日亜化学工業株式会社 信号用発光ダイオード及びそれを用いた信号機
JP3505488B2 (ja) * 1999-10-12 2004-03-08 古河電気工業株式会社 光モジュール

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01211988A (ja) * 1988-02-19 1989-08-25 Oki Electric Ind Co Ltd 半導体レーザ装置
JPH0338652U (enExample) * 1989-08-23 1991-04-15
JPH0418770A (ja) * 1990-05-11 1992-01-22 Omron Corp 光源器
JPH10193679A (ja) * 1997-01-08 1998-07-28 Hitachi Ltd レーザ光源装置及びレーザプリンタ
JPH11224969A (ja) * 1997-12-05 1999-08-17 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH11274650A (ja) * 1998-03-26 1999-10-08 Matsushita Electric Ind Co Ltd 半導体レーザおよびそれを用いた光送信モジュール

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022918A (ja) * 2002-06-19 2004-01-22 Fuji Photo Film Co Ltd レーザモジュールの製造方法
JP2004288674A (ja) * 2003-03-19 2004-10-14 Fuji Xerox Co Ltd 面発光型半導体レーザおよびそれを用いた光通信システム
JP2006040987A (ja) * 2004-07-23 2006-02-09 Nichia Chem Ind Ltd 半導体レーザパッケージ
JP2007027471A (ja) * 2005-07-19 2007-02-01 Fuji Xerox Co Ltd 半導体レーザ装置およびこれを用いた光送信装置
WO2009081470A1 (ja) * 2007-12-21 2009-07-02 Mitsubishi Electric Corporation レーザ光源モジュール
KR101142561B1 (ko) 2007-12-21 2012-05-08 미쓰비시덴키 가부시키가이샤 레이저 광원 모듈
US8233512B2 (en) 2007-12-21 2012-07-31 Mitsubishi Electric Corporation Laser light source module
JP5430406B2 (ja) * 2007-12-21 2014-02-26 三菱電機株式会社 レーザ光源モジュール
US20140241388A1 (en) * 2011-11-30 2014-08-28 Panasonic Corporation Nitride semiconductor light-emitting system
US9059569B2 (en) * 2011-11-30 2015-06-16 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor light-emitting system
WO2016060069A1 (ja) * 2014-10-15 2016-04-21 株式会社小糸製作所 半導体レーザー装置
CN106797104A (zh) * 2014-10-15 2017-05-31 株式会社小糸制作所 半导体激光装置
US9979154B2 (en) 2014-10-15 2018-05-22 Koito Manufacturing Co., Ltd. Semiconductor laser device
CN106797104B (zh) * 2014-10-15 2019-07-12 株式会社小糸制作所 半导体激光装置
JP2020057760A (ja) * 2018-10-01 2020-04-09 創威光電股▲ふん▼有限公司 光学サブアセンブリモジュール及び光学サブアセンブリモジュールのキャップ
US10895700B2 (en) 2018-10-01 2021-01-19 Axcen Photonics Corp. Optical sub-assembly module and cap thereof

Also Published As

Publication number Publication date
US20020100914A1 (en) 2002-08-01
US6528825B2 (en) 2003-03-04

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