JP2002071989A - 光導波路デバイスの製造方法および光導波路デバイス - Google Patents
光導波路デバイスの製造方法および光導波路デバイスInfo
- Publication number
- JP2002071989A JP2002071989A JP2000253249A JP2000253249A JP2002071989A JP 2002071989 A JP2002071989 A JP 2002071989A JP 2000253249 A JP2000253249 A JP 2000253249A JP 2000253249 A JP2000253249 A JP 2000253249A JP 2002071989 A JP2002071989 A JP 2002071989A
- Authority
- JP
- Japan
- Prior art keywords
- optical waveguide
- waveguide device
- thickness
- manufacturing
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000010410 layer Substances 0.000 claims abstract description 83
- 239000011347 resin Substances 0.000 claims abstract description 51
- 229920005989 resin Polymers 0.000 claims abstract description 51
- 239000012792 core layer Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 35
- 238000000059 patterning Methods 0.000 claims abstract description 3
- 238000005253 cladding Methods 0.000 claims description 42
- 239000002904 solvent Substances 0.000 claims description 32
- 229920001721 polyimide Polymers 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 13
- 238000001035 drying Methods 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 15
- 239000000243 solution Substances 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000253249A JP2002071989A (ja) | 2000-08-24 | 2000-08-24 | 光導波路デバイスの製造方法および光導波路デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000253249A JP2002071989A (ja) | 2000-08-24 | 2000-08-24 | 光導波路デバイスの製造方法および光導波路デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002071989A true JP2002071989A (ja) | 2002-03-12 |
| JP2002071989A5 JP2002071989A5 (enrdf_load_stackoverflow) | 2007-10-11 |
Family
ID=18742369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000253249A Pending JP2002071989A (ja) | 2000-08-24 | 2000-08-24 | 光導波路デバイスの製造方法および光導波路デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002071989A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003056371A1 (fr) * | 2001-12-26 | 2003-07-10 | Hitachi Chemical Co.,Ltd. | Procede de fabrication de dispositif a guide d'onde et dispositif a guide d'ondes |
| WO2003058306A1 (fr) * | 2001-12-28 | 2003-07-17 | Hitachi Chemical Co.,Ltd. | Film a guide d'ondes optique polymere |
-
2000
- 2000-08-24 JP JP2000253249A patent/JP2002071989A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003056371A1 (fr) * | 2001-12-26 | 2003-07-10 | Hitachi Chemical Co.,Ltd. | Procede de fabrication de dispositif a guide d'onde et dispositif a guide d'ondes |
| US7200313B2 (en) | 2001-12-26 | 2007-04-03 | Hitachi Chemical Co., Ltd. | Method for the preparation of optical waveguide devices and optical waveguide devices |
| WO2003058306A1 (fr) * | 2001-12-28 | 2003-07-17 | Hitachi Chemical Co.,Ltd. | Film a guide d'ondes optique polymere |
| US7162134B2 (en) | 2001-12-28 | 2007-01-09 | Hitachi Chemical Co., Ltd. | Polymeric optical waveguide film |
| US7373064B2 (en) | 2001-12-28 | 2008-05-13 | Hitachi Chemical Co., Ltd. | Polymeric optical waveguide film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6096656A (en) | Formation of microchannels from low-temperature plasma-deposited silicon oxynitride | |
| US6229949B1 (en) | Polymer optical waveguide, optical integrated circuit, optical module and optical communication apparatus | |
| JPH0792337A (ja) | ポリマコア光導波路およびその製造方法 | |
| KR20120129993A (ko) | 플라즈마로 중합된 중합체 코팅물 | |
| JP2001100055A (ja) | 光導波路及び光導波路の製造方法 | |
| JP2008262052A (ja) | 光導波路装置および光導波路装置の製造方法 | |
| CN110095840A (zh) | 一种硅基浅刻蚀波导起偏器及其制备方法 | |
| EP2599578B1 (en) | Laser processing method for fabricating a through hole | |
| JP3937439B2 (ja) | 光導波路デバイスの製造方法及び光導波路デバイス | |
| JP2002071989A (ja) | 光導波路デバイスの製造方法および光導波路デバイス | |
| US20030082886A1 (en) | Method of preparing silicon-on-insulator substrates particularly suited for microwave applications | |
| JP4640878B2 (ja) | 低誘電率樹脂絶縁層を用いた回路基板の製造方法及び低誘電率樹脂絶縁層を用いた薄膜多層回路フィルムの製造方法 | |
| CN101274739A (zh) | 非接触式微电子机械系统红外温度报警器的制备方法 | |
| JP2002014250A (ja) | 光配線層の製造方法及び光・電気配線基板 | |
| JP2007128105A (ja) | 光導波路デバイスの製造方法及び光導波路デバイス | |
| JP4379902B2 (ja) | 光導波路デバイスの製造方法 | |
| JP2008155314A (ja) | Ｍｅｍｓデバイスの製造方法 | |
| JP2001074949A (ja) | 保護層を備えた樹脂製光導波路、その製造方法および光部品 | |
| JP4449075B2 (ja) | 光導波路及びその製造方法 | |
| JP4895320B2 (ja) | 光導波路デバイスの製造方法 | |
| CN112558333A (zh) | 一种电光器件及其制造方法 | |
| JP2002258088A (ja) | プリント配線板への高分子光導波路形成方法 | |
| JP3690648B2 (ja) | 光導波路基板 | |
| JP3559528B2 (ja) | 光電気回路基板 | |
| JP2001083346A (ja) | 電気光混載配線板及び電気光混載モジュール並びにその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070824 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070824 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20070824 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20070824 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090709 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090721 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091207 |