JP2002071752A - Method and substrate for testing semiconductor element and method for manufacturing test substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve the simplification of a test process and the reduction of testing cost. SOLUTION: The burn-in test of a semiconductor element is performed in such a state that the projected electrodes 12 of the test substrate 10 and the electrical connection electrode 3a of a semiconductor element 3 are bonded under heating and pressure and, when the semiconductor element 3 is peeled from the test substrate 10 after the test of the semiconductor element 3 is completed, the projected electrodes 12 are peeled from the test substrate 10 along with the semiconductor element 3 and the projected electrodes 12 are formed on the semiconductor element 3 to simultaneously perform the test of the semiconductor element 3 and the formation of the projected electrodes 12 to the semiconductor element 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of testing a semiconductor device, a test board thereof, and a method of manufacturing the test board.

[0002]

2. Description of the Related Art Before mounting a semiconductor device, a function test is performed in a heating atmosphere at 150.degree. C., and a burn-in test for causing defects / defects is performed. If the semiconductor element is packaged, the package leads can be inserted into the socket and tested.However, testing an unpackaged semiconductor element called a bare chip can be performed on all the electrical connection electrodes of the semiconductor element. It has been difficult to achieve uniform contact of the test pins.

[0003] Under such circumstances, a method shown in FIG. 14 has been developed (Preprint of the 34th SHM Technical Conference, pp. 19-23, Tsukada). In FIG. 14, 3 is a semiconductor element, 40 is a high melting point solder, 41 is a low melting point solder, 42 is a test wiring, and 43 is a test board. In FIG.
A high melting point solder 40 is formed on the semiconductor element 3 by vapor deposition or the like, and a low melting point solder 41 is laminated on the high melting point solder 40 in FIG. That is, a hole is provided in the bottom plate of the container having the molten solder, pressure is applied to the molten solder with air or the like, and the solder extruded from the hole of the container is deposited on the high melting point solder 40 of the semiconductor element 3. The low melting point solder 41 is formed on the high melting point solder 40. In FIG. 3C, the lower surface of the low melting point solder 41 is joined to the upper surface of the tip of the test wiring 42 while the test wiring 4
2, a socket (not shown) is connected to the rear end, and a function test is performed in a heated atmosphere. Further, in FIG. 3D, after the test, the semiconductor element 3 is heated to melt the low melting point solder 41, and the semiconductor element 3 is removed from the test wiring 42 of the test board 43. The low melting point solder 41 remains on the test board 43. Finally, in FIG. 7E, a low-melting-point solder 41 is formed again on the high-melting-point solder 40 of the semiconductor element 3 which has been confirmed as a non-defective product in the test, and the semiconductor element 3 is prepared for mounting.

[0004]

The conventional method for testing a semiconductor device shown in FIG. 14 uses a high melting point solder 40 and a low melting point solder 41 in which projecting electrodes are formed by different methods.
After the test, the low-melting-point solder 41 must be formed again, and there is a first problem that the process is complicated. Since the low-melting-point solder 41 is formed on the high-melting-point solder 40, there is a second problem in that the positions of the two solders are displaced and a fine bump electrode cannot be formed.

The present invention has been made to solve the above problems, and has as its object to provide a method of testing a semiconductor device, a test substrate, and a method of manufacturing the test substrate.

[0006]

A first aspect of the present invention is the first aspect.
In the method for testing a semiconductor device according to the invention, a protruding electrode is formed on a test substrate having a test wiring by electrically connecting the protruding electrode to the test wiring, and an electrical connection electrode of the semiconductor device is bonded to the protruding electrode on the test substrate. Then, the semiconductor element is tested in a heating atmosphere, and after the test is completed, the semiconductor element is peeled off from the test substrate by detaching the semiconductor element from the test substrate so that the electrode for electrical connection of the semiconductor element accompanies the protruding electrode. It was done.

According to a second aspect of the present invention, there is provided a method for testing a semiconductor device according to the first aspect, wherein the protruding electrode peeled off from the test substrate by the electric connection electrode is peeled off from the test substrate. The step of etching the portion is added.

According to a third aspect of the present invention, there is provided a method for testing a semiconductor device according to the first aspect, wherein the protruding electrode peeled off from the test substrate by the electric connection electrode is separated from the test substrate. Is added to the polishing step.

According to a fourth aspect of the present invention, there is provided a test substrate for a semiconductor device, wherein a protruding electrode and a test wiring are formed on a surface of the test substrate, and the protruding electrode is connected to an end surface of the test wiring. It is what it was.

According to a fifth aspect of the present invention, there is provided a test substrate for a semiconductor device, except that the test wiring disposed on the surface of the test substrate is covered with a polymer resin except for the protruding electrodes. The outer side of the test wiring is joined to the surface of the test substrate.

A test substrate for a semiconductor device according to a sixth aspect of the present invention has a structure in which the protruding electrodes are formed by plating.

According to a seventh aspect of the present invention, a test substrate for a semiconductor device according to the present invention has a configuration in which a projecting electrode is formed by a plurality of metal layers stacked.

According to an eighth aspect of the present invention, in the test substrate for a semiconductor device, the protruding electrode and the test wiring are formed on the surface of the test substrate, and the protruding electrode is formed on the test wiring by a thickness equal to or less than the thickness of the test wiring. It is configured to be connected by a thin film.

According to a ninth aspect of the present invention, in the test substrate for a semiconductor device, the test substrate is made of a flexible polymer resin and a conductor made of metal.

According to a tenth aspect of the present invention, there is provided a test substrate for a semiconductor device, wherein a gold thin film is interposed between the bump electrode and the test substrate according to the twenty-fourth aspect.

According to an eleventh aspect of the present invention, in the method of manufacturing a test substrate, a protruding electrode is formed on the test substrate, and an upper portion of the protruding electrode is polished.

[0017]

The method for testing a semiconductor device according to the first aspect of the present invention includes the steps of:
The protruding electrode is carried along with the semiconductor element and peeled off from the test substrate, and the protruding electrode is formed on the semiconductor element. That is, since the test of the semiconductor element and the formation of the protruding electrodes on the semiconductor element are performed simultaneously, the test process is simplified, and the cost of the test is reduced.

A method for testing a semiconductor device according to a second aspect of the present invention
After peeling off the protruding electrode from the test substrate together with the semiconductor element,
Since the tip of the protruding electrode is etched, the surface of the protruding electrode is cleaned, and the connection of the semiconductor element to the wiring board is improved.

According to a third aspect of the present invention, there is provided a method for testing a semiconductor device.
After peeling off the protruding electrode from the test substrate together with the semiconductor element,
Since the tip of the protruding electrode is polished, the height of the protruding electrode is uniform, and the connection of the semiconductor element to the wiring board is improved.

In the test substrate according to the fourth aspect of the present invention, since the protruding electrodes are formed on the insulator of the test substrate and the protruding electrodes are connected at the end surfaces of the test wiring, the adhesion between the protruding electrodes and the test substrate is reduced. It becomes smaller than the adhesive force between the semiconductor element and the semiconductor element, so that the semiconductor element can be easily separated from the test substrate after the test, and the formation of the protruding electrode on the semiconductor element is also ensured.

In the test board according to the fifth aspect of the invention, the polymer resin covers the test wiring except for the protruding electrodes, and the polymer resin holds the test wiring. When the protruding electrode peels off from the test substrate due to the accompanying, peeling of the test wiring is prevented.

In the test substrate according to the sixth aspect of the present invention, since the protruding electrodes are formed by plating, protruding electrodes made of various kinds of metals can be easily obtained.

In the method of manufacturing a test board according to the seventh aspect of the present invention, since the protruding electrodes are made of a plurality of metals, gold-gold heat diffusion bonding can be performed in addition to the solder bonding, and the semiconductor element can be connected to the wiring board. The range of connection conditions expands.

In the test board according to the eighth aspect of the present invention, the protruding electrode and the test wiring are connected by a thin film conductor thinner than the test wiring, so that the protruding electrode is easily peeled off while leaving the test wiring.

In the test board according to the ninth aspect of the present invention, since the test board is made of a polymer resin and a metal, the test board has flexibility, and the semiconductor element is separated from the test board after connecting the protruding electrodes. Becomes easier.

In the test substrate according to the tenth aspect of the present invention, since gold is provided between the test substrate made of a polymer resin and the protruding electrode, the adhesion between the protruding electrode and the test substrate is reduced.
Separation of the semiconductor element from the test substrate is facilitated.

According to an eleventh aspect of the present invention, there is provided a
After the protruding electrodes are formed on the test substrate, the upper portions of the protruding electrodes are polished, so that the heights of the protruding electrodes are uniform and uniform connection between the semiconductor element and the protruding electrodes is performed.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to FIGS.
In the following description, the same parts as those of the above-described conventional example are denoted by the same reference numerals.

Embodiment 1 FIG. 1 is an exploded perspective view showing a test substrate and a semiconductor element for performing a test used in a method for testing a semiconductor device according to a first embodiment of the present invention, and FIG. FIG. 2A is a cross-sectional view, and FIG.
2 is a state in which the semiconductor element 3 is bonded to the bump electrode 12, FIG. 2c is a state in which a test is performed, and FIG. 3 is a state where it is peeled off from the test substrate 10. In FIG. 1, a semiconductor element 3 is a bare chip that is cut out from a wafer that has undergone a physical element formation process and has one surface provided with electrical connection electrodes 3a for signal transmission and power supply. The test board 10 is formed of ceramic,
The same number of test wirings 10a as the number of the electrical connection electrodes 3a of the semiconductor element 3 are formed on one surface of the test substrate 10 in advance. Are electrically connected to the connectors 11 mounted on the left and right edges of the
The protruding electrodes 12 are arranged on the test substrate 10 at the tip end of “a”, and these protruding electrodes 12 are positioned so as to face the electrical connection electrodes 3 a of the semiconductor element 3.

A test method of the semiconductor element 3 will be described with reference to FIG. As shown in FIG. 3A, a resist is patterned on the test substrate 10 on which the test wiring 10a is formed so that a portion where the protruding electrode 12 is formed is exposed. Then, tin and lead are vapor-deposited by mask, and heating and resist removal are performed. Then, the protruding electrodes 12 are formed. The side surface of the formed protruding electrode 12 is in contact with the tip end surface of the test wiring 10a.
Next, as shown in FIG.
The electrical connection electrode 3a of FIG.
The electric connection electrode 3 a is joined to the protruding electrode 12 by performing heating and pressurization. Then, as shown in FIG. 3C, with the connector 11 connected to the test wiring 10a, the semiconductor element 3 was exposed to a heating atmosphere of 150 ° C.
The semiconductor element 3 is energized from 1 to perform a burn-in test on the semiconductor element 3. After this burn-in test is over,
The semiconductor element 3 is peeled off from the test substrate 10. When the semiconductor element 3 is peeled off, the protruding electrode 12 and the electrical connection electrode 3a are joined to each other by a metal-to-metal connection.
And the test substrate 10 is a joint between metal and ceramic, and the adhesion between the protruding electrode 12 and the electrical connection electrode 3a is greater than the adhesion between the protruding electrode 12 and the test substrate 10; As shown in FIG. 3, the protruding electrode 12 is peeled off from the test substrate 10 integrally with the semiconductor element 3 and the protruding electrode 1 is connected to each of the electrical connection electrodes 3a.
2. Thereafter, as shown in FIG. 7A, a protruding electrode 12 is newly formed on the test substrate 10 in the same manner as described above, and then a new semiconductor element 3 is joined to the protruding electrode 12 as shown in FIG. The test of the semiconductor element 3 is repeated by sequentially passing through the burn-in test shown in FIG. c and the peeling of the semiconductor element 3 from the test substrate 10 shown in FIG.

Therefore, the semiconductor device 3 of the first embodiment
According to the test method, with the completion of the burn-in test,
Since the protruding electrode 12 is formed on the semiconductor element 3, the formation of the protruding electrode 12 on the semiconductor element 3 and the test are performed at the same time, so that the test process is simplified and the cost of the test can be reduced.

In the first embodiment, the test substrate 10 is made of ceramic, and the test wiring 10a is formed directly on the ceramic substrate. A similar effect can be obtained by forming a layer of a polymer material such as polyimide, epoxy, or the like, and forming a test wiring 10a thereon.

Embodiment 2 FIG. FIG. 3 is a cross-sectional view of a method for testing a semiconductor device according to Embodiment 2 of the present invention. FIG. 3A shows a semiconductor device peeled state after the test, and FIG. 3B shows a post-process state of the semiconductor device. As shown in FIG. 3A, when the semiconductor element 3 is peeled off from the test substrate 10 after the test, the adhesive force between the protruding electrode 12 and the electrical connection electrode 3a is greater than the adhesive force between the thin film conductor 17 and the test substrate 10. Since it is large, the thin film conductor 17 and the protruding electrode 12 are peeled off from the test substrate 10 integrally with the semiconductor element 3, so that the semiconductor element 3 has the electric connection electrode 3 a and the protruding electrode 12. Thereafter, as shown in FIG.
The surface of the semiconductor element 3 peeled off from the substrate is exposed to an etchant, and the thin film conductor 17 is etched. This thin film conductor 17
When copper is used, an ammonium persulfide solution is used as an etchant.

Therefore, according to the method for testing a semiconductor device of the second embodiment, after the semiconductor device 3 is peeled off from the test substrate 10, the protruding electrode 12 bonded to the semiconductor device 3 is etched, and the thin film conductor is removed from the protruding electrode 12. Since 17 is removed, the surface of the protruding electrode 12 is cleaned, and the reliability of bonding of the semiconductor element 3 to the wiring board on which the semiconductor element 3 is mounted after the test can be improved.

Embodiment 3 FIG. 4A and 4B are cross-sectional views of a method for testing a semiconductor device according to Embodiment 3 of the present invention. FIG. 4A shows a semiconductor device peeling state after the test, and FIG. 4B shows a post-processing state of the semiconductor device. As shown in FIG. 3A, when the semiconductor element 3 is peeled off from the test substrate 10 after the test, the adhesive force between the protruding electrode 12 and the electrical connection electrode 3a is greater than the adhesive force between the thin film conductor 17 and the test substrate 10. Since it is large, the thin film conductor 17 and the protruding electrode 12 are peeled off from the test substrate 10 integrally with the semiconductor element 3, and the semiconductor element 3 has the protruding electrode 12 on each of the electrical connection electrodes 3 a. Thereafter, as shown in FIG.
The lower portion of the protruding electrode 12 peeled off from the thin film conductor 1 is polished.
7 is removed. This polishing is performed on a polyurethane nonwoven fabric using colloidal silica as a polishing liquid.

Therefore, according to the method for testing a semiconductor device of the third embodiment, after the semiconductor device 3 is peeled off from the test substrate 10, the protruding electrode 12 bonded to the semiconductor device 3 is polished. Can be cleaned and the heights of the protruding electrodes 12 can be made uniform. When the semiconductor element 3 is mounted on a wiring board on which the semiconductor element 3 after the test is mounted, the entire height of the protruding electrodes 12 of the semiconductor element 3 And the reliability of bonding can be improved.

Embodiment 4 FIG. FIG. 5 is a sectional view of a test board according to Embodiment 4 of the present invention. In FIG. 5, a test substrate 10 is made of ceramic, and has a test wiring 10a on one surface. The test wiring 10a is formed as a thin film on the test substrate 10 by a photolithography technique using a resist and a film forming technique such as sputtering. This test wiring 1
After the formation of Oa, the resist is patterned on the test substrate 10 including the test wiring 10a except for the portion where the bump electrode 12 is formed. Then, tin and lead are mask-deposited, heated, and the resist is removed, so that the bump electrodes 12 are formed on the test substrate 10. This protruding electrode 1
2 are in contact with the front end surface of the test wiring 10a, and the lower end surface of the protruding electrode 12 is in direct contact with the surface of the test substrate 10.

Therefore, the test board 1 of the fourth embodiment
0, the projecting electrode 12 is formed on the surface of the ceramic test substrate 10 and the side surface of the projecting electrode 12 is connected to the end face of the test wiring 10a formed in a thin film. In the burn-in test of the semiconductor element 3 described in the above, the adhesive force of the projecting electrode 12 to the test substrate 10 can be made smaller than the adhesive force of the projecting electrode 12 to the electrical connection electrode 3a. 3 can be easily separated from the test substrate 10, and the formation of the protruding electrodes 12 on the semiconductor element 3 and the test can be performed simultaneously.

In the fourth embodiment, the case where the test wiring 10a is formed directly on the ceramic substrate as the test substrate 10 has been illustrated and described as an example. However, as shown in FIG. The same applies to the case where an insulator 14 such as polyimide or epoxy is formed in a layer on a substrate 13 made of a material such as a polymer material having rigidity, and the test wiring 10a and the bump electrode 12 are formed thereon. The effect is obtained.

Embodiment 5 FIG. 7 shows a test board according to Embodiment 5 of the present invention. FIG. 7A is a sectional view, and FIG.
FIG. 2 shows a cross-sectional view taken along line AA of FIG. In FIG. 7, a test wiring 10a and a protruding electrode 12 are provided on one surface of a test substrate 10, and a coat film 16 is provided on one surface of the test substrate 10 including the test wiring 10a. The coating film 16 is formed by coating polyimide on the entire surface of the test substrate 10 including the test wiring 10a after the test wiring 10a is formed and before the bump electrode 12 is formed, or after the test wiring 10a and the bump electrode 12 are formed. Then, the coating film 16 on the bump electrodes 12 is removed by using a photoengraving technique.

Therefore, the test board 1 of the fifth embodiment
According to FIG. 0, as shown in FIG.
a is coated on the test substrate 10 on both sides of the coating film 16.
Since it has a role of fixing Oa, when the semiconductor element 3 (see FIG. 2) is peeled from the test substrate 10, peeling of the test wiring 10a accompanying peeling of the protruding electrode 12 from the test substrate 10 can be reliably prevented.

Although polyimide is used as the material of the coating film 16 in the fifth embodiment, the same effect can be expected by using a polymer material such as epoxy.

Embodiment 6 FIG. FIG. 8 is a cross-sectional view of a test substrate manufacturing method according to Embodiment 6 of the present invention. FIG. 8A is a state after test wiring is formed, FIG. 8B is a preliminary state of bump electrode formation, and FIG. The test board is in a completed state. First, in FIG.
Then, a thin film conductor 17 such as copper is formed on the entire surface of the test substrate 10 including the test wiring 10a by sputtering or vapor deposition. Here, the thin film conductor 17 is formed by a dry method such as sputtering.
A method based on electroless plating may be used. Next, as shown in FIG. 2B, a resist 18 is patterned on the thin film conductor 17 to form a projection electrode forming hole 19. And c
As shown in the figure, the protruding electrode 12 is formed by electroplating using the thin film conductor 17 exposed in the protruding electrode forming hole 19 as an electrode.
Is formed in the projection electrode forming hole 19, and then the resist 18 and the thin film conductor 17 are removed.

Therefore, according to the test substrate manufacturing method of the sixth embodiment, since the protruding electrodes are formed by plating,
The protruding electrodes 12 made of various metals can be easily obtained.

Although copper is used as the material of the thin-film conductor 17 in the sixth embodiment, a similar effect can be obtained with a metal such as aluminum. In addition, although solder is used as the material of the protruding electrode 12, gold may be used.

Embodiment 7 FIG. FIG. 9 is a sectional view of a test board according to Embodiment 7 of the present invention. In the seventh embodiment, the protruding electrodes 12 are formed of various kinds of metals by the manufacturing method of the sixth embodiment. 9, the bump electrode 12 is formed by sequentially laminating a first layer 12a, a second layer 12b, and a third layer 12c from the thin film conductor 17 side, and the first layer 12a and the second layer 12b are formed by using solder. Although copper is used as the material of the second layer 12b, gold may be used as the material of the first layer 12a and the third layer 12c, and copper may be used as the material of the second layer 12b. In the seventh embodiment, the material of the bump electrode 12 is 2
Although the first layer 12a may be formed of three types of different materials for each layer, the material of the first layer 12a is determined by the connection relationship between the bump electrode 12 and the printed wiring board, and the material of the third layer 12c is The protrusion electrode 12 is determined by the connection relationship with the semiconductor element 3. In addition, the first layer 12a and the second layer 12
A metal layer having a thickness of several thousand angstroms, for example, titanium, chromium, nickel or the like may be formed on the interface between each of the layers b and the third layer 12c in order to increase the adhesion between the respective materials.

Therefore, according to the test board of the seventh embodiment, since the protruding electrode 12 is constituted by a plurality of metals, not only solder connection but also heat diffusion bonding of gold-gold can be performed. The bonding of the electrode 12 to the wiring board on which the semiconductor element is mounted after the test can be performed over a wide range of conditions.

Embodiment 8 FIG. FIG. 10 is a sectional view of a test board according to Embodiment 8 of the present invention. The eighth embodiment is different from the sixth embodiment in that the protruding electrode 12 is formed by the manufacturing method of the sixth embodiment. As shown in FIG. 10, a feature is that a gap 20 is formed between the protruding electrode 12 and the test wiring 10a. There is. In other words, the tip of the test wiring 10a is formed with a gap 20 away from the protruding electrode forming portion, and the protruding electrode forming hole is formed from the tip of the test wiring 10a at the time of patterning the resist for forming the protruding electrode. The protruding electrodes 12 are formed by forming them at regular positions only apart from each other. When the resist is removed after the formation of the projecting electrode 12, a gap 20 is formed between the projecting electrode 12 and the test wiring 10a, and a part of the thin film conductor 17 is exposed in the gap 20 with a small width.

Therefore, according to the test board of the eighth embodiment, since the protruding electrode 12 and the test wiring 10a are connected by the thin film conductor 17 having a thickness equal to or less than the thickness of the test wiring 10a, the semiconductor element is peeled off after the test. At this time, the peeling force of the protruding electrode 12 that peels off together with the semiconductor element is not transmitted to the tip of the test wiring 10a, and only a minimal force from the thin film conductor 17 that rises with the protruding electrode 12 acts.
The thin film conductor 17 is used to connect the test wiring 10a to the test board 10
Cut before peeling from As a result, the test wiring 10a reliably remains on the test substrate 10, and the projecting electrode 12
Is peeled off from the test substrate 10 with the thin film conductor 17 attracted, so that the protruding electrode 12 can be easily peeled off.

Embodiment 9 FIG. FIG. 11 is a sectional view of a test board according to Embodiment 9 of the present invention. In FIG. 11, a test substrate 10A has flexibility made of a polymer material such as polyimide, and has a test wiring 10a formed on one surface of the test substrate 10A. Is formed with a thin-film conductor 17, on which the protruding electrode 12 is formed. The test wiring 10a is formed by bonding a conductor film as the test wiring 10a to the test substrate 10A with an adhesive (not shown), or by sputtering or depositing a conductor as the test wiring 10a on the test substrate 10A, and further performing a test. Substrate 10
A conductor as the test wiring 10a can be formed on A by plating or not. Epoxy or the like may be used as the polymer material of the test substrate 10A.

Therefore, according to the test substrate of the ninth embodiment, since the test substrate 10A is made of a polymer material and has a flexible structure, when the semiconductor element is peeled off after the test, the projecting electrodes 12 are made of the polymer material. Can be easily peeled off from the test substrate 10A due to the good peeling performance.

Embodiment 10 FIG. FIG. 12 shows Embodiment 1 of the present invention.
0 shows a sectional view of the test board according to FIG. In the tenth embodiment, the thin film conductor 17 of the test substrate of the ninth embodiment is
Is an alternative to That is, in FIG. 12, a test wiring 10a is formed on one surface of a flexible test substrate 10A made of a polymer material such as polyimide or epoxy.
Is formed, and a gold thin film 21 is formed by sputtering or vapor deposition on the test substrate 10A at the protruding electrode formation portion,
The protruding electrode 12 is formed on the gold thin film 21.

Therefore, according to the test substrate of the tenth embodiment, the flexible test substrate 10 made of a polymer material is used.
Since the structure is such that the protruding electrode 12 is provided with the gold thin film 21 interposed on A, the adhesion of the gold thin film 21 to the polymer material is extremely weak. 12 can be easily peeled off from the test substrate 10A.

Embodiment 11 FIG. FIG. 13 shows Embodiment 1 of the present invention.
1A and 1B are cross-sectional views of a method for manufacturing a test substrate according to No. 1, wherein FIG. 1A, a test substrate 10 made of ceramic has a test wiring 10a and a thin-film conductor 17 on one surface thereof, and the thin-film conductor 17 has a projecting electrode 1 thereon.
2 From a micro point of view of semiconductor technology, the height of the protruding electrode 12 when formed on the thin film conductor 17 may be different. Therefore, after the formation of the projecting electrodes 12, the upper surfaces of the projecting electrodes 12 are polished, and the heights of the projecting electrodes 12 are made uniform as shown in FIG. This polishing is performed on a polyurethane nonwoven fabric using colloidal silica as a polishing liquid.

Therefore, according to the test substrate manufacturing method of the eleventh embodiment, since the upper surface of the bump electrode 12 is polished after the bump electrode 12 is formed, the height of the bump electrode 12 can be made uniform, and Uniform bonding with twelve semiconductor elements becomes possible.

[0056]

According to the first invention, after the test is completed,
When the semiconductor element is peeled off from the test substrate, the protruding electrode is accompanied by the semiconductor element and peeled off from the test substrate, so that the protruding electrode is formed on the semiconductor element. The formation can be performed at the same time, the test process is simplified, and the cost of the test can be reduced.

According to the second aspect of the present invention, since the protruding electrode is peeled off from the test substrate together with the semiconductor element, the tip of the protruding electrode is etched. The effect is that the connection to the device can be improved.

According to the third aspect of the present invention, the protruding electrodes are peeled off from the test substrate together with the semiconductor element, and then the tip of the protruding electrode is polished. This has the effect of improving the connection.

According to the fourth aspect of the present invention, since the protruding electrodes are formed in the form of an insulator on the test substrate and the protruding electrodes are connected at the end surfaces of the test wiring, the adhesion between the protruding electrodes and the test substrate is reduced. This is smaller than the adhesive force between the protruding electrode and the semiconductor element, so that the semiconductor element can be easily separated from the test substrate after the test, and the protruding electrode can be reliably formed on the semiconductor element.

According to the fifth aspect of the present invention, the polymer resin covers the test wiring except for the protruding electrodes, and the polymer resin holds the test wiring. When the protruding electrode separates from the test substrate due to being carried over, the peeling of the test wiring can be prevented.

According to the sixth aspect of the present invention, since the projecting electrodes are formed by plating, there is an effect that projecting electrodes made of various kinds of metals can be easily obtained.

According to the seventh aspect of the present invention, since the protruding electrodes are formed of a plurality of metals, a gold-
The heat diffusion bonding of gold is also possible, and there is an effect that the range of connection conditions of the semiconductor element with the wiring board is widened.

According to the eighth aspect, since the protruding electrode and the test wiring are connected by a thin film conductor thinner than the test wiring, there is an effect that the protruding electrode can be easily separated while leaving the test wiring. .

According to the ninth aspect of the present invention, since the test substrate is formed of a polymer resin and a metal, the test substrate has flexibility, and the test substrate of the semiconductor device after the connection of the protruding electrodes is used. There is an effect that the peeling can be easily performed.

According to the tenth aspect, since gold is provided between the test substrate made of a polymer resin and the protruding electrode, the adhesion between the protruding electrode and the test substrate is reduced, and the semiconductor device This has the effect that it can be easily separated from the test substrate.

According to the eleventh aspect of the present invention, after the protruding electrodes are formed on the test substrate, the upper portions of the protruding electrodes are polished, so that the height of the protruding electrodes is uniform, and the uniformity of the semiconductor element and the protruding electrodes is achieved. There is an effect that a simple connection can be made.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view of a test substrate and a semiconductor element according to a first embodiment.

FIG. 2 is a cross-sectional view illustrating a test method according to the first embodiment.

FIG. 3 is a cross-sectional view illustrating a test method according to a second embodiment.

FIG. 4 is a sectional view illustrating a test method according to a third embodiment.

FIG. 5 is a sectional view of a test board according to a fourth embodiment.

FIG. 6 is a sectional view showing another example of the fourth embodiment.

FIG. 7 is a cross-sectional view of a test board according to a fifth embodiment.

FIG. 8 is a cross-sectional view illustrating a method of manufacturing a test substrate according to a sixth embodiment.

FIG. 9 is a sectional view of a test board according to a seventh embodiment.

FIG. 10 is a sectional view of a test board according to an eighth embodiment.

FIG. 11 is a sectional view of a test board according to a ninth embodiment.

FIG. 12 is a sectional view of a test board according to a tenth embodiment.

FIG. 13 is a cross-sectional view illustrating the method for manufacturing the test substrate according to the eleventh embodiment.

FIG. 14 is an explanatory diagram showing a conventional semiconductor device test method.

[Explanation of symbols]

 Reference Signs List 3 semiconductor element 3a electrode for electrical connection 10 test board 10a test wiring 12 protruding electrode 16 coat film

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (Reference) H01L 21/92 604G (72) Inventor Goro 8-1, 1-1 Tsukaguchi Honcho, Amagasaki City Mitsubishi Electric Corporation Within the Institute of Industrial Science (72) Inventor Mitsunori Ishizaki 8-1-1, Tsukaguchi Honcho, Amagasaki City Mitsubishi Electric Corporation Inside the Institute of Industrial Science (72) Inventor Osamu Hayashi 8-1-1, Tsukaguchi Honmachi, Amagasaki City Mitsubishi Electric Corporation Within the Research Institute of Industrial Science (72) Inventor Susumu Hoshinouchi 8-1-1, Tsukaguchi-Honmachi, Amagasaki-shi F-term (reference) 2M003 AA07 AB01 AC01 AD01 AG03 AG12 AH04 AH07 2G011 AA16 AA21 AB06 AB10 AC14 AE22 AF07 4M106 AA02 AD08 AD10 BA14 DH44

Claims (11)

[Claims] A step of forming a protruding electrode on a test substrate having a test wiring by electrically connecting the protruding electrode to the test wiring; and a step of bonding an electrical connection electrode of a semiconductor element to the protruding electrode of the test substrate. A step of testing the semiconductor element in a heating atmosphere, and a step of separating the semiconductor element from the test substrate by peeling the semiconductor element from the test substrate after completion of the test so that the electrode for electrical connection of the semiconductor element accompanies the protruding electrode. A method for testing a semiconductor device comprising: 2. After the step of peeling off the semiconductor element from the test substrate after the test is completed, the electrode for electrical connection of the semiconductor element is separated from the test substrate by bringing the projecting electrode into contact with the electrode for electrical connection. 2. The method for testing a semiconductor device according to claim 1, further comprising a step of etching a portion of the protruding electrode peeled off from the test substrate by being carried away from the test substrate. 3. After the step of peeling off the semiconductor element from the test substrate after the test is completed, the electrical connection electrode of the semiconductor element is separated from the test substrate by a step of causing the projecting electrode to accompany the semiconductor element. 2. The method for testing a semiconductor device according to claim 1, further comprising a step of polishing a portion of the protruding electrode peeled off from the test substrate by being carried away from the test substrate. 4. A test board for testing a semiconductor device having a test wiring and a protruding electrode, wherein the protruding electrode and the test wiring are formed on a surface of the test substrate, and the protruding electrode is an end face of the test wiring. A test board for a semiconductor device, wherein the test board is connected to a test board. 5. A test board having a test wiring and a protruding electrode for testing a semiconductor device, except for the protruding electrode, wherein a test wiring disposed on a surface of the test substrate is covered with a polymer resin. A test board for a semiconductor device, wherein an outer side of a test wiring of a polymer resin is joined to a surface of the test board. 6. A test board for a semiconductor device, comprising a test wiring and a projecting electrode for testing a semiconductor device, wherein the projecting electrode is formed by plating. 7. A test board for testing a semiconductor device having test wirings and projecting electrodes, wherein the projecting electrodes are formed of a plurality of stacked metal layers. . 8. A test board for testing a semiconductor device having a test wiring and a protruding electrode, wherein the protruding electrode and the test wiring are formed on the surface of the test substrate, and the protruding electrode is tested on the test wiring. A test substrate for a semiconductor device, wherein the test substrate is connected by a thin film having a thickness equal to or less than a thickness of a wiring. 9. A semiconductor device, wherein a test substrate having a test wiring and a protruding electrode for testing a semiconductor device is made of a flexible polymer resin and a conductor using a metal. Test board. 10. The test board for a semiconductor device according to claim 9, wherein a gold thin film is interposed between the bump electrode and the test board. 11. A method of manufacturing a test substrate for testing a semiconductor device having test wirings and bump electrodes,
A method for manufacturing a test substrate, comprising: forming the bump electrode on a test substrate; and polishing an upper portion of the bump electrode.