JP3449997B2 - Semiconductor device test method and test board - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION This invention test method for a semiconductor device, it relates to the test board.

[0002]

Prior to mounting a semiconductor device, a functional test is performed in a heating atmosphere of 150 ° C. and a burn-in test for producing defects / defectives is performed. If the semiconductor device is packaged, it is possible to test by inserting the package leads into the socket, but to test the unpackaged semiconductor device called bare chip, all the electrical connection electrodes of the semiconductor device must be tested. It has been considered difficult to evenly contact the test pins.

Under these circumstances, the method shown in FIG. 14 has been developed (Proceedings of 34th SHM Technical Lecture Meeting, pages 19 to 23, Tsukada). In FIG. 14, 3 is a semiconductor element, 40 is a high melting point solder, 41 is a low melting point solder, 42 is a test wiring, and 43 is a test substrate. In Figure a,
A high melting point solder 40 is formed on the semiconductor element 3 by vapor deposition or the like, and a low melting point solder 41 is laminated on the high melting point solder 40 in FIG. That is, a hole is provided in the bottom plate of the container having the molten solder, pressure is applied to the molten solder by air or the like, and the solder extruded from the hole of the container is deposited on the high melting point solder 40 of the semiconductor element 3. The low melting point solder 41 is formed on the high melting point solder 40. Then, in FIG. C, the lower surface of the low melting point solder 41 is joined to the upper surface of the tip end portion of the test wiring 42, while the test wiring 4
Connect a socket (not shown) to the rear end of 2 and perform a functional test in a heated atmosphere. Further, in the diagram d, the low melting point solder 41 is melted by heating after the test, and the semiconductor element 3 is removed from the test wiring 42 of the test substrate 43. The low melting point solder 41 remains on the test substrate 43. Finally, in the figure e, the low melting point solder 41 is formed again on the high melting point solder 40 of the semiconductor element 3 which is confirmed to be non-defective in the test, to prepare for the mounting of this non-defective semiconductor element 3.

[0004]

In the conventional semiconductor element test method shown in FIG. 14, the high melting point solder 40 and the low melting point solder 41 in which the protruding electrodes are formed by different methods are used.
There is a first problem that the low melting point solder 41 has to be formed again after the test, and the process is complicated. Since the low-melting-point solder 41 is formed on the high-melting-point solder 40, there is a second problem in that the positions of the two solders are misaligned and a fine protruding electrode cannot be formed.

The present invention has been made to solve the above problems, and an object thereof is to provide a test method for a semiconductor device, a test board, and a method for manufacturing the test board.

[0006]

[Means for Solving the Problem] A first aspect described in claim 1.
The method of testing a semiconductor device according to the invention of claim 1, wherein the step of forming a protruding electrode on the surface of the test substrate having the test wiring in the absence of the test wiring by connecting to the tip surface of the test wiring, and the semiconductor electrode on the protruding electrode of the test substrate. The step of joining the electrical connection electrodes of the element, the step of testing this semiconductor element in a heating atmosphere, and the step of peeling the semiconductor element from the test substrate after this test is completed And the semiconductor element has a protruding electrode as an electrode for electrical connection when peeled off from the test substrate.
The process consists of a form .

According to a second aspect of the present invention, there is provided a semiconductor element test method, which is a method for performing a half test after completion of the test of the first invention.
By peeling the conductor element from the test substrate, the semiconductor
The element is designed to have a protruding electrode as an electrode for electrical connection.
After that, a step of etching the peeled portion of the protruding electrode provided on the electrical connection electrode from the test substrate is added.

According to a third aspect of the present invention, there is provided a semiconductor device testing method, which is a method for performing a half test after the test of the first invention is completed.
By peeling the conductor element from the test substrate, the semiconductor
The element is designed to have a protruding electrode as an electrode for electrical connection.
After that, a step of polishing a portion of the protruding electrode provided on the electric connection electrode from the test substrate is added.

[0009]

[0010] Test substrates of the semiconductor device according to a fourth invention defined in claim 4, the semiconductor device of the first to third invention
In the test board used for the test method,
Test line provided with protruding electrode plate on removal rather surface is covered with a polymer resin, in which outside the check wire of the polymer resin is bonded to the surface of the test board with the exception of protruding electrodes.

[0011] Test substrates of the semiconductor device according to a fifth invention according to claim 5, the semiconductor device of the first to third invention
In the test substrate used in the test method, in which protruding electrodes are formed by plating.

[0012]

[0013] Test substrates of the semiconductor device according to the sixth invention described in claim 6, the semiconductor device of the first to third invention
In the test board used for the test method, the protruding electrode
Are those connected <br/> a thickness less thin film conductor test wiring check wire.

[0014]

The test substrate of a semiconductor device according to the seventh invention according to claim 7, the semiconductor device of the first to third invention
In the test board used in the test method, a test board made of a polymer resin having flexibility and the protruding electrodes is used .
In which the gold thin film is interposed between the surfaces.

[0016]

[0017]

According to the semiconductor element testing method of the first aspect of the invention, when the semiconductor element is peeled off from the test substrate after the test is completed,
When peeling off this semiconductor element,
The electrode for air connection is a metal-to-metal joint, and it can be tested with the protruding electrode.
Since the substrate is a joint between metal and ceramic,
The adhesion of the electrode with the electrode for electrical connection is better for testing the protruding electrode
Since the adhesion strength with the substrate is greater, the protruding electrode
The semiconductor element is separated from the test board together with the child
A form in which each of the electrodes for electrical connection has a protruding electrode and
Therefore, the protruding electrode is easily peeled off from the test substrate, the test process is simplified, and the test cost is reduced.

The semiconductor device testing method of the second invention is
After peeling the bump electrode together with the semiconductor element from the test board,
Since the tip of the protruding electrode is etched, the surface of the protruding electrode is cleaned and the connection of the semiconductor element to the wiring board is improved.

The semiconductor device testing method of the third invention is
After peeling the bump electrode together with the semiconductor element from the test board,
Since the tips of the protruding electrodes are polished, the heights of the protruding electrodes are made uniform, and the connection of the semiconductor element to the wiring board is improved.

[0020]

In the test substrate of the fourth invention, the polymer resin covers the test wiring except the protruding electrodes, and the polymer resin holds the test wiring. Therefore, when the semiconductor element is peeled from the test substrate, When the projecting electrodes are peeled off from the test substrate due to accompanying, peeling of the test wiring is prevented.

In the test substrate of the fifth aspect of the present invention, since the protruding electrodes are formed by plating, the protruding electrodes made of many kinds of metals can be easily obtained.

[0023]

In the test board of the sixth aspect of the present invention, since the protruding electrode and the test wiring are connected by a thin film conductor thinner than the test wiring, it is easy to peel off the protruding electrode while leaving the test wiring.

[0025]

In the test substrate of the seventh invention, since the gold thin film is provided between the test substrate made of the polymer resin and the bump electrode, the adhesion between the bump electrode and the test substrate becomes small and the semiconductor device The peeling from the test board becomes easy.

[0027]

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, each embodiment of the present invention will be described with reference to FIGS.
The same parts as those of the above-mentioned conventional example are designated by the same reference numerals and will be described.

Example 1. 1 shows an exploded perspective view of a test substrate used in a semiconductor device testing method according to a first embodiment of the present invention and a semiconductor device for performing a test. FIG. 2 shows a semiconductor device testing method according to the first embodiment. A cross-sectional view is shown in FIG.
2 is a state in which the semiconductor element 3 is bonded to the protruding electrode 12 in FIG. 2B, FIG. 2C is a state in which a test is performed, and FIG. 2D is a semiconductor element. 3 is in a state of being peeled off from the test substrate 10. In FIG. 1, the semiconductor element 3 is a bare chip that is cut out from a wafer that has undergone a physical element forming process and has one surface thereof provided with electrodes 3a for electrical connection for signal transmission and power supply. The test board 10 is made of ceramic,
The same number of test wirings 10a as the electrical connection electrodes 3a of the semiconductor element 3 are formed in advance on one surface of the test board 10, and the end portions of the respective test wirings 10a extending to the left and right edges of the test board 10 have the test board 10a. Each of the test wirings 10 is electrically connected to the connectors 11 mounted on the left and right edges of the
Protruding electrodes 12 are arranged on the test substrate 10 at the tip of a, and these protruding electrodes 12 are positioned so as to face the electrical connection electrodes 3 a of the semiconductor element 3.

A method of testing the semiconductor element 3 will be described with reference to FIG. As shown in FIG. a, after patterning a resist on the test substrate 10 on which the test wiring 10a is formed so that a portion where the protruding electrode 12 is formed is exposed, tin and lead are mask-deposited and heated and removed by a resist. Then, the protruding electrode 12 is formed. The side surface of the formed protruding electrode 12 is in contact with the tip surface of the test wiring 10a.
Next, as shown in FIG.
The electric connection electrode 3a of
By heating and pressurizing, the electrode 3a for electrical connection is joined to the protruding electrode 12. Then, as shown in FIG. 3C, with the connector 11 connected to the test wiring 10a, the semiconductor element 3 is exposed to a heating atmosphere of 150 ° C.
The semiconductor element 3 is energized from 1 and the burn-in test of the semiconductor element 3 is performed. After this burn-in test,
The semiconductor element 3 is peeled off from the test board 10. When the semiconductor element 3 is peeled off, the bump electrode 12 and the electrical connection electrode 3a are bonded to each other by metal bonding, and
Since the test substrate 10 and the test substrate 10 are formed by joining metal and ceramic, the adhesion force between the protruding electrode 12 and the electrical connection electrode 3a is larger than the adhesion force between the protruding electrode 12 and the test substrate 10, so that the d diagram shown in FIG. As shown in FIG. 3, the protruding electrode 12 is separated from the test substrate 10 integrally with the semiconductor element 3, and the semiconductor element 3 is attached to each of the electrical connection electrodes 3a.
It becomes the form which has 2. Thereafter, as shown in FIG. A, a protruding electrode 12 is newly formed on the test substrate 10 by the same method as described above, and then a new semiconductor element 3 is bonded to the protruding electrode 12 as shown in FIG. The test of the semiconductor element 3 is repeated by sequentially passing through the burn-in test shown in FIG. c and the peeling of the semiconductor element 3 from the test substrate 10 shown in FIG.

Therefore, the semiconductor device 3 of the first embodiment
According to the test method of, with the completion of the burn-in test,
Since the protruding electrode 12 is formed on the semiconductor element 3, the forming of the protruding electrode 12 on the semiconductor element 3 and the test are performed at the same time, so that the test process is simplified and the cost of the test can be reduced.

In the first embodiment, the case where ceramic is used as the material of the test substrate 10 and the test wiring 10a is directly formed on the ceramic substrate has been shown and described as an example. The same effect can be obtained by forming a layer of a polymer material such as polyimide or epoxy on top of which a test wiring 10a is formed.

Example 2. 3A and 3B are sectional views showing a method for testing a semiconductor device according to a second embodiment of the present invention, wherein FIG. 3A shows a semiconductor device peeled state after the test, and FIG. 3B shows a semiconductor device post-treatment state. As shown in FIG. a, when the semiconductor element 3 is peeled from the test substrate 10 after the test, the adhesion force between the protruding electrode 12 and the electrical connection electrode 3a is stronger than the adhesion force between the thin film conductor 17 and the test substrate 10. Since it is large, the thin film conductor 17 and the protruding electrode 12 are separated from the test substrate 10 integrally with the semiconductor element 3, and the semiconductor element 3 has the electrical connection electrode 3a and the protruding electrode 12. After this, as shown in FIG.
The surface of the semiconductor element 3 peeled off is exposed to an etchant, and the thin film conductor 17 is etched. This thin film conductor 17
When copper is used as the material, an ammonium persulfide solution is used as the etchant.

Therefore, according to the semiconductor element testing method of the second embodiment, after the semiconductor element 3 is peeled from the test substrate 10, the protruding electrode 12 bonded to the semiconductor element 3 is etched, and the protruding electrode 12 is removed to form a thin film conductor. Since 17 is removed, the surface of the bump electrode 12 is cleaned, and the reliability of the bonding of the semiconductor element 3 to the wiring board mounting the semiconductor element 3 after the test can be improved.

Example 3. 4A and 4B are sectional views showing a method of testing a semiconductor device according to a third embodiment of the present invention. FIG. 4A shows a state where the semiconductor device is peeled off after the test, and FIG. 4B shows a state where the semiconductor device is post-processed. As shown in FIG. a, when the semiconductor element 3 is peeled from the test substrate 10 after the test, the adhesion force between the protruding electrode 12 and the electrical connection electrode 3a is stronger than the adhesion force between the thin film conductor 17 and the test substrate 10. Since it is large, the thin film conductor 17 and the protruding electrode 12 are separated from the test substrate 10 integrally with the semiconductor element 3, and the semiconductor element 3 has the protruding electrode 12 on each of the electrical connection electrodes 3a. After this, as shown in FIG.
The lower portion of the protruding electrode 12 peeled off from the thin film conductor 1 is polished.
Remove 7. This polishing is performed on a polyurethane non-woven fabric using colloidal silica as a polishing liquid.

Therefore, according to the semiconductor element testing method of the third embodiment, the projection electrode 12 bonded to the semiconductor element 3 is polished after the semiconductor element 3 is peeled from the test substrate 10, so that the surface of the projection electrode 12 is polished. And the heights of the protruding electrodes 12 can be made uniform, and when the semiconductor element 3 is mounted on the wiring board on which the semiconductor element 3 after the test is mounted, all the heights of the protruding electrodes 12 of the semiconductor element 3 are As a result, the reliability of bonding can be improved.

Example 4. FIG. 5 shows a sectional view of a test board according to a fourth embodiment of the present invention. In FIG. 5, the test substrate 10 is made of ceramic and has a test wiring 10a on one surface thereof. The test wiring 10a is formed as a thin film on the test substrate 10 by a photolithography technique using a resist and a film forming technique such as sputtering. This test wiring 1
After the formation of 0a, the resist is patterned on the test substrate 10 including the test wiring 10a except the portion where the protruding electrode 12 is formed. Then, tin and lead are vapor-deposited with a mask, heated, and the resist is removed, whereby the bump electrodes 12 are formed on the test substrate 10. This protruding electrode 1
The side surface 2 is in contact with the tip surface of the test wiring 10a, and the lower end surface of the bump electrode 12 is in direct contact with the surface of the test substrate 10.

Therefore, the test board 1 of the fourth embodiment
0 has a structure in which the protruding electrode 12 is formed on the surface of the ceramic test substrate 10 and the side surface of the protruding electrode 12 is connected to the end face of the test wiring 10a formed in a thin film. In the burn-in test of the semiconductor element 3 described in 1., the adhesion force between the protruding electrode 12 and the test substrate 10 can be made smaller than the adhesion force between the protruding electrode 12 and the electrical connection electrode 3a. 3 can be easily peeled from the test substrate 10, and the formation of the protruding electrode 12 on the semiconductor element 3 and the test can be performed at the same time.

In the fourth embodiment, the case where the test wiring 10a is directly formed on the ceramic substrate as the test substrate 10 has been shown and described as an example. However, as shown in FIG. 6, ceramic or, for example, a printed circuit board or the like is used. The same applies to a substrate 13 made of a material such as a polymer material having rigidity as described above, on which an insulator 14 such as polyimide or epoxy is formed in layers, and the test wiring 10a and the bump electrode 12 are formed thereon. The effect is obtained.

Example 5. FIG. 7 shows a test board according to a fifth embodiment of the present invention, wherein FIG. 7A is a sectional view and FIG.
The sectional view on the AA line of a figure is shown. In FIG. 7, a test wiring 10a and a bump electrode 12 are provided on one surface of the test substrate 10, and a coat film 16 is provided on one surface of the test substrate 10 including the test wiring 10a. The coat film 16 is formed on the entire surface of the test substrate 10 including the test wiring 10a after forming the test wiring 10a and before forming the bump electrodes 12 or after forming the test wiring 10a and the bump electrodes 12. Then, the coating film 16 on the protruding electrodes 12 is removed by photolithography.

Therefore, the test board 1 of the fifth embodiment
According to 0, as shown in FIG.
Since both sides of the coat film 16 covering a are bonded on the test substrate 10, the coat film 16 is formed by the test wiring 1
Since it has a role of fixing 0a, when the semiconductor element 3 (see FIG. 2) is peeled from the test substrate 10, the peeling of the test wiring 10a due to the peeling of the bump electrode 12 from the test substrate 10 can be reliably prevented.

Although polyimide is used as the material of the coat film 16 in the fifth embodiment, the same effect can be expected by using a polymer material such as epoxy.

Example 6. 8A to 8C are sectional views showing a method of manufacturing a test board according to a sixth embodiment of the present invention. FIG. 8A shows a state after the test wiring is formed, FIG. 8B shows a state of a preliminary step of forming a protruding electrode, and FIG. The test board is in a completed state. First, as shown in FIG.
Then, a thin film conductor 17 such as copper is formed on the entire surface of the test substrate 10 including the test wiring 10a by sputtering or vapor deposition. Here, the thin film conductor 17 is formed by a dry method such as sputtering.
A method using electroless plating may be used. Next, as shown in FIG. 11B, the resist 18 is patterned on the thin film conductor 17 to form the protruding electrode forming hole 19. And c
As shown in the figure, the thin film conductor 17 exposed in the protruding electrode forming hole 19 is used as an electrode, and the protruding electrode 12 is formed by electroplating.
Is deposited and formed in the projection electrode forming hole 19, and then the resist 18 and the thin film conductor 17 are removed.

Therefore, according to the method of manufacturing the test board of the sixth embodiment, since the protruding electrodes are formed by plating,
It is possible to easily obtain the bump electrode 12 made of many kinds of metals.

Although copper is used as the material of the thin film conductor 17 in the sixth embodiment, a metal such as aluminum has the same effect. Further, although solder is used as the material of the bump electrodes 12, gold may be used instead.

Example 7. FIG. 9 is a sectional view of a test board according to a seventh embodiment of the present invention. In this Example 7, the protruding electrode 12 is formed of various kinds of metals by the manufacturing method of the above Example 6. In FIG. 9, the bump electrode 12 is formed by sequentially laminating the first layer 12a, the second layer 12b, and the third layer 12c from the thin film conductor 17 side, and the first layer 12a and the second layer 12b are made of solder. Although the material of the second layer 12b is copper, gold may be used as the material of the first layer 12a and the third layer 12c, and copper may be used as the material of the second layer 12b. Further, in this embodiment 7, the material of the protruding electrode 12 is 2
Although it is configured with three types of different materials for each layer, the material of the first layer 12a is determined by the connection relationship between the bump electrode 12 and the printed wiring board, and the material of the third layer 12c is The protruding electrode 12 is determined by the connection relationship with the semiconductor element 3. In addition, the first layer 12a and the second layer 12
A metal layer having a thickness of several thousand angstroms, for example, titanium, chromium, or nickel may be formed at the interface between each of the b and the third layer 12c in order to increase the adhesive force of each material.

Therefore, according to the test substrate of Example 7, since the protruding electrode 12 is composed of a plurality of metals, not only solder connection but also gold-gold thermal diffusion bonding can be performed. After the test of the electrode 12, the bonding with the wiring board on which the semiconductor element is mounted can be performed under a wide range of conditions.

Example 8. FIG. 10 is a sectional view of a test board according to the eighth embodiment of the present invention. The eighth embodiment is one in which the protruding electrode 12 is formed by the manufacturing method of the above-mentioned sixth embodiment, but is characterized in that a gap 20 is formed between the protruding electrode 12 and the test wiring 10a as shown in FIG. There is. That is, the tip end of the test wiring 10a is formed apart from the protruding electrode forming portion by the gap 20. When patterning the resist for forming the protruding electrode, the protruding electrode forming hole is provided with the gap 20 from the leading end of the test wiring 10a. The protruding electrodes 12 are formed by forming the protruding electrodes 12 at regular positions apart from each other. When the resist is removed after forming the bump electrodes 12, a gap 20 is formed between the bump electrode 12 and the test wiring 10a, and a part of the thin film conductor 17 is exposed in the gap 20 with a narrow width.

Therefore, according to the test substrate of the eighth embodiment, since the protruding electrode 12 and the test wiring 10a are connected by the thin film conductor 17 having a thickness equal to or less than the thickness of the test wiring 10a, the semiconductor element is peeled off after the test. At this time, the peeling force of the protruding electrode 12 that is peeled off together with the semiconductor element is not transmitted to the tip portion of the test wiring 10a, and only the minimal force from the thin film conductor 17 that is picked up by the protruding electrode 12 acts.
The thin film conductor 17 connects the test wiring 10a to the test substrate 10
Cut off before peeling from. As a result, the test wiring 10a surely remains on the test substrate 10 and the protruding electrode 12
Is peeled off from the test substrate 10 along with the thin film conductor 17, so that the bump electrode 12 can be peeled off easily.

Example 9. FIG. 11 is a sectional view of a test board according to the ninth embodiment of the present invention. In FIG. 11, the test substrate 10A is made of a polymer material such as polyimide and has flexibility, and the test wiring 10a is formed on one surface of the test substrate 10A. The thin film conductor 17 is formed, and the protruding electrode 12 is formed on the thin film conductor 17. Regarding the test wiring 10a, a conductor film as the test wiring 10a is bonded to the test substrate 10A with an adhesive (not shown), or a conductor as the test wiring 10a is sputtered or vapor-deposited on the test substrate 10A. Board 10
It can be formed by plating a conductor as the test wiring 10a on A. Further, epoxy or the like may be used as the polymer material of the test substrate 10A.

Therefore, according to the test substrate of Example 9, since the test substrate 10A is made of a polymer material and has a flexible structure, when the semiconductor element is peeled off after the test, the protruding electrodes 12 are made of the polymer material. Because of the good peeling property, the test substrate 10A can be easily peeled off.

Example 10. FIG. 12 is a first embodiment of the present invention.
0 shows a sectional view of the test board according to 0. In this tenth embodiment, the thin film conductor 17 of the test substrate of the ninth embodiment is replaced with a gold thin film 21.
It is a substitute for. That is, in FIG. 12, the test wiring 10a is formed on one surface of the flexible test substrate 10A made of a polymer material such as polyimide or epoxy.
Is formed, and the gold thin film 21 is formed by sputtering or vapor deposition on the test substrate 10A at the protruding electrode forming portion.
The bump electrodes 12 are formed on the gold thin film 21.

Therefore, according to the test board of the tenth embodiment, the test board 10 is made of a polymer material and has flexibility.
Since the protruding electrode 12 is provided on A with the gold thin film 21 interposed therebetween, the adhesion of the gold thin film 21 to the polymer material is extremely weak. Therefore, when the semiconductor element is peeled off after the test, 12 can be peeled off easily from the test substrate 10A.

Example 11. FIG. 13 is a first embodiment of the present invention.
1A and 1B are cross-sectional views of a method for manufacturing a test substrate according to No. 1, in which FIG. In FIG. 3A, a test substrate 10 made of ceramic has a test wiring 10a and a thin film conductor 17 on one surface thereof, and the thin film conductor 17 is provided on the test wiring 10a.
Have two. From the microscopic point of the semiconductor technology, the height of the protruding electrode 12 may be different when formed on the thin film conductor 17. Therefore, after forming the bump electrodes 12, the upper surface of the bump electrodes 12 is polished to make the height of the bump electrodes 12 uniform as shown in FIG. This polishing is performed on a polyurethane non-woven fabric using colloidal silica as a polishing liquid.

Therefore, according to the method for manufacturing the test substrate of Example 11, since the upper surface of the bump electrode 12 is polished after the bump electrode 12 is formed, the heights of the bump electrodes 12 can be made uniform and the bump electrodes can be made uniform. Uniform bonding with 12 semiconductor elements becomes possible.

[0056]

According to the first invention, after the test is completed,
When the semiconductor element is peeled off from the test board, the semiconductor element
In peeling off the child, the protruding electrode and the electrode for electrical connection
Is a metal-to-metal bond, and the bump electrode and test board are metal
Since it is a joint between ceramic and ceramic, electrical connection of the protruding electrode
Adhesion to the test electrode is closer to the bump electrode to the test board
Since it is larger than the force, the protruding electrode is not integrated with the semiconductor element.
Peeled off from the test board and the semiconductor element is electrically connected.
Since each of the working electrodes has a protruding electrode,
The electromotive electrode is easily separated from the test substrate, the test process is simplified, and the test cost can be reduced.

According to the second aspect of the invention, since the protruding electrode is peeled off from the test board together with the semiconductor element, the tip of the protruding electrode is etched, so that the surface of the protruding electrode is cleaned and the wiring board of the semiconductor element is cleaned. There is an effect that the connection to can be improved.

According to the third aspect of the invention, since the protruding electrode is peeled off together with the semiconductor element from the test substrate, the tip of the protruding electrode is polished, so that the height of the protruding electrode is uniform and the wiring board of the semiconductor element is provided. It has the effect of improving the connection.

[0059]

According to the fourth aspect of the invention, the polymer resin covers the test wiring except the protruding electrodes, and the polymer resin holds the test wiring. Therefore, when the semiconductor element is peeled from the test substrate, the semiconductor element is removed. when projecting electrodes by subjected Families are separated test substrate or et peeling to an effect that the peeling of the test wiring can be prevented.

According to the fifth aspect of the invention, since the protruding electrodes are formed by plating, there is an effect that the protruding electrodes made of various kinds of metals can be easily obtained.

[0062]

According to the sixth invention, since the protruding electrode and the test wiring are connected by the thin film conductor thinner than the test wiring, there is an effect that the protruding electrode can be easily peeled off while leaving the test wiring. .

[0064]

According to the seventh aspect of the invention, since the gold thin film is provided between the test substrate made of polymer resin and the bump electrode, the adhesion between the bump electrode and the test substrate is reduced, and the semiconductor is reduced. There is an effect that the element can be easily peeled from the test substrate.

[0066]

[Brief description of drawings]

FIG. 1 is an exploded perspective view of a test substrate and a semiconductor element according to a first embodiment.

FIG. 2 is a cross-sectional view showing a test method of Example 1.

FIG. 3 is a cross-sectional view showing a test method of Example 2.

FIG. 4 is a cross-sectional view showing a test method of Example 3.

FIG. 5 is a cross-sectional view of a test board of Example 4.

FIG. 6 is a sectional view showing a different example of the fourth embodiment.

FIG. 7 is a cross-sectional view of a test board of Example 5.

FIG. 8 is a cross-sectional view showing the method of manufacturing the test substrate of Example 6;

FIG. 9 is a cross-sectional view of a test board of Example 7.

FIG. 10 is a cross-sectional view of a test board of Example 8.

FIG. 11 is a cross-sectional view of a test board of Example 9.

FIG. 12 is a sectional view of a test board of Example 10.

FIG. 13 is a cross-sectional view showing the method of manufacturing the test board of Example 11;

FIG. 14 is an explanatory diagram showing a conventional semiconductor element testing method.

[Explanation of symbols]

3 Semiconductor element 3a Electrode for electrical connection 10 test board 10a test wiring 12 protruding electrode 16 coat film

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsunori Ishizaki 8-1-1 Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation Production Engineering Laboratory (72) Inventor Osamu Hayashi 8-1-1 Tsukaguchihonmachi, Amagasaki Mitsubishi Electric Corporation Production Technology Laboratory (72) Inventor Susumu Hoshinouchi 8-1-1 Tsukaguchi Honcho, Amagasaki City Mitsubishi Electric Corporation Production Technology Laboratory (56) Reference JP-A-6-13442 (JP, A) JP 59-154035 (JP, A) JP 3-286592 (JP, A) JP 2-210846 (JP, A) Actual development 61-179747 (JP, U) (58) Survey Areas (Int.Cl. ⁷ , DB name) G01R 31/26 G01R 1/06-1/073 H01L 21/66

Claims (7)

(57) [Claims] 1. A test substrate having a check wire test
The step of forming a protruding electrode on the surface where there is no wiring by connecting it to the tip surface of the test wiring, the step of joining the electrode for electrical connection of the semiconductor element to the protruding electrode of this test substrate, and the step of heating this semiconductor element in a heated atmosphere in a step of testing a semiconductor device is peeled from the electrically connecting electrode of the semiconductor element is let take subjected protruding electrode test substrate by peeling from the test substrate a semiconductor element after the completion of the test the electrical contact
A method for testing a semiconductor element, which comprises a step of forming a protruding electrode as a continuous electrode . 2. The semiconductor element is electrically connected by peeling the semiconductor element from the test substrate after the test is completed .
2. The semiconductor device according to claim 1, further comprising a step of etching a peeled portion of the protruding electrode provided on the electrical connection electrode from the test substrate after the step of forming the protruding electrode on the electrode. Test method. 3. The semiconductor element is electrically connected by peeling the semiconductor element from the test substrate after the test .
After the step of the configuration having a protruding electrode on the electrode, wherein, characterized in that by adding the step of polishing the peeling section of the test substrate of the protruding electrodes provided on the electrode the electrical connection
Item 1. A method for testing a semiconductor device according to item 1 . 4. A method of testing a semiconductor device according to claim 1.
In the test substrate for use in, projecting electrode of test substrate
The test wiring arranged on the surface excluding the pole is covered with polymer resin, and the outside of this polymer resin test wiring is the protruding electrode.
A test board for a semiconductor device, characterized in that the test board is bonded to the surface of the test board except for . 5. A method for testing a semiconductor device according to any one of claims 1 to 3.
Test substrate of a semiconductor device, characterized in that in the test substrate, the collision force electrodes formed by plating used for. 6. A method for testing a semiconductor device according to any one of claims 1 to 3.
Test substrate of a semiconductor device, characterized in that in the test substrate, the collision force electrode connected with a thickness less thin film conductor test wiring test wiring used for. 7. A method of testing a semiconductor device according to any one of claims 1 to 3.
In the test substrate for use in, the protruding electrodes and the flexible
Test substrate semi conductor elements you characterized in that the gold thin film is interposed between the surface of the test substrate comprising a polymer resin having sex.