JP2002277485A - Probe card, probe pin, and method for manufacturing the probe card and the probe pin - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe card where fine probe pins are arranged with a fine pitch. SOLUTION: The probe card 10 has an amorphous alloy layer 18, a metal layer 20, and a projection 24, and comprises a probe pin 12 that is at least partially curved, a retention board 16 for retaining one end of the probe pin 12, and a transmission line 14 that is provided on the retention board 16 and is electrically connected to the probe pin 12.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a probe card,
The present invention relates to a probe pin, a probe card manufacturing method, and a probe pin manufacturing method. In particular, the present invention relates to a probe pin formed of an amorphous alloy, a probe card including a probe pin formed of an amorphous alloy, a probe card manufacturing method, and a probe pin manufacturing method.

[0002]

2. Description of the Related Art Conventionally, a probe pin used for a probe card has a structure in which the tip of a metal needle such as tungsten is bent, and these probe pins are manually mounted on a printed circuit board.

[0003]

However, in such a manual operation, it is difficult to manufacture probe pins having a narrow pitch of probe pins in order to cope with recent miniaturized semiconductor integrated circuits. is there. In addition, conventional probe pins have a length of about several tens of millimeters, so when transmitting a high-speed signal, the probe pins themselves become mismatched parts, so that the characteristics of an integrated circuit operating at a high frequency can be tested. Has become difficult.

Accordingly, an object of the present invention is to provide a probe card, a probe pin, and a method of manufacturing a probe card which can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.

[0005]

According to a first aspect of the present invention, there is provided a probe card used to test the characteristics of an electronic component by contacting the terminals of the electronic component, the probe card having an amorphous alloy layer. A probe card having at least a partly curved probe pin, a holding substrate for holding one end of the probe pin, and a transmission line provided on the holding substrate and electrically connected to the probe pin. I do.

[0006] The probe pin may include a metal layer formed on the amorphous alloy layer, and the metal layer may be connected to the transmission line. The amorphous alloy layer may include palladium. The probe pins may have protrusions provided at multiple ends. The probe card may include a plurality of probe pins provided on the holding substrate.

According to a second aspect of the present invention, there is provided a probe pin which comes into contact with a terminal of an electronic component and is used for testing characteristics of the electronic component, the probe pin having an amorphous alloy layer, at least a part of which is curved. A probe pin is provided.

According to a third aspect of the present invention, there is provided a probe card manufacturing method for manufacturing a probe card used to test the characteristics of an electronic component by contacting a terminal of the electronic component, the method comprising: Forming a probe pin having one end connected to the substrate; heating the amorphous alloy layer; pressing the other end of the probe pin so that at least a portion of the probe pin is curved; A method of manufacturing a probe card, comprising: preparing a holding substrate on which a transmission line including a material is formed; and joining one end of a probe pin to the holding substrate.

[0009] The amorphous alloy layer may be formed by depositing an amorphous alloy by a sputtering method. The amorphous alloy layer may be formed by depositing an amorphous alloy containing palladium.

The steps of forming the probe pins include preparing a substrate, forming an amorphous alloy layer in a predetermined region of the substrate, and removing a part of the substrate including a part of the predetermined region. May be provided.

The step of removing a part of the substrate may include removing a part of the substrate so as to form an opening in the substrate, and the step of pressing the amorphous alloy layer includes forming a protrusion that can be inserted into the opening. The jig may be used to press the amorphous alloy layer.

The step of forming an amorphous alloy layer includes the steps of forming a sacrificial layer on a substrate, removing a sacrificial layer in a predetermined region, forming an amorphous alloy layer by a sputtering method, Removing the amorphous alloy layer formed on the sacrificial layer. Forming the amorphous alloy layer may include roughening the substrate, and the amorphous alloy layer may be formed on the roughened substrate.

[0013] The step of forming the probe pins may further include the step of forming an adhesion layer for bringing the substrate and the amorphous alloy layer into close contact with each other, and the step of forming the amorphous alloy layer comprises bringing the amorphous alloy layer into contact with the amorphous alloy layer. It may be formed on a layer.

In the step of forming the adhesion layer, a layer containing a titanium-nickel alloy having a composition ratio of about 1: 1 may be formed. The step of forming the adhesion layer may include a step of forming a first adhesion layer containing chromium or titanium on the substrate, and a step of forming a second adhesion layer containing copper on the first adhesion layer, The step of forming an amorphous alloy layer includes:
An amorphous alloy layer may be formed on the second adhesion layer.

The method of manufacturing a probe card may further include the step of forming a groove that reduces from the upper end to the lower end of the substrate. The step of forming the amorphous alloy layer includes forming the other end of the amorphous alloy layer in the groove of the substrate. The amorphous alloy layer may be formed as described above.

The step of forming the groove includes the steps of forming a protective film on the surface of the substrate, removing the protective film in a region where the groove is to be formed, and forming the groove by anisotropic etching using the protective film as a mask. And the step of performing.

The probe card manufacturing method may further include a step of forming a transmission line including a conductive material on the holding substrate. The step of forming the probe pins may include forming a plurality of probe pins on the substrate, and the step of bonding may include arranging and bonding the plurality of probe pins to the holding substrate. The joining may include a step of bonding one end of the probe pin to the holding substrate and a step of thermocompression bonding one end of the probe pin to the holding substrate. The bonding includes forming a bump on one end of the probe pin and at least one of the holding substrate, bonding one end of the probe pin to the holding substrate via the bump, and thermocompression bonding one end of the probe pin to the holding substrate. And the step of performing.

[0018] The probe card manufacturing method may further include the step of removing the remainder of the substrate. Forming the probe pins may further comprise forming a release sacrificial layer between the substrate and the amorphous alloy layer;
Removing the rest of the substrate may remove the release sacrificial layer and the rest of the substrate.

The step of forming a probe pin may further include the step of forming a metal layer on the amorphous alloy layer. The step of forming the probe pin may further include the step of forming a barrier layer between the amorphous alloy layer and the metal layer that prevents a metal contained in the metal layer from diffusing into the amorphous alloy layer. The step of forming the probe pin may further include a step of forming an adhesion layer for bringing the amorphous alloy layer and the metal layer into close contact with each other on the amorphous alloy layer, and the step of forming the metal layer includes forming the metal layer on the adhesion layer. May be formed.

According to a fourth aspect of the present invention, there is provided a probe pin manufacturing method for manufacturing a probe pin used to test the characteristics of an electronic component by contacting a terminal of the electronic component, wherein one end is connected to a substrate. Forming an amorphous alloy layer, heating the amorphous alloy layer, and pressing the other end of the amorphous alloy layer so that at least a portion of the amorphous alloy layer is curved. A method for manufacturing a probe pin is provided. The above summary of the present invention does not list all of the necessary features of the present invention, and sub-combinations of these features may also constitute the present invention.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the claimed invention and have the features described in the embodiments. Not all combinations are essential to the solution of the invention.

FIG. 1 is a sectional view showing a first example of a probe card 10 according to one embodiment of the present invention. The probe card 10 includes a plurality of probe pins 1 contacting a plurality of terminals 52 of an electronic component 50 such as a semiconductor integrated circuit.
2, a transmission line 14 electrically connected to one end of the probe pin 12, and a holding substrate 16 provided with the transmission line 14.
And

The probe pin 12 includes an amorphous alloy layer 18 containing an amorphous alloy as a material. The amorphous alloy may include any metal, such as a metallic glass, as long as it is an amorphous alloy that undergoes a reversible phase transition from an amorphous phase to a fluid phase that is a supercooled liquid region in a predetermined temperature range. . The amorphous alloy preferably contains palladium or zirconium as a main component. When the amorphous alloy contains palladium as a main component, the amorphous alloy may further contain copper and / or silicon. When the amorphous alloy contains zirconium as a main component, the amorphous alloy may contain copper and / or aluminum. It is preferable that the amorphous alloy layer 18 has a thickness of 5 μm or more.

The probe pins 12 are made of the amorphous alloy layer 1
It is preferable to further include a metal layer 20 formed on the metal layer 8. In this case, the probe pins 12 are preferably connected to the transmission line 14 such that the metal layer 20 faces the holding substrate 16. In the present embodiment, the metal layer 20 is formed on the entire surface of the amorphous alloy layer 18. Metal layer 20
At least one end connected to the transmission line 14 is preferably formed by gold plating. In another example, the metal layer 20 may be formed only at one end of the amorphous alloy layer 18.

The transmission line 14 is preferably formed of a material having high-frequency transmission characteristics sufficient to test the characteristics of the electronic component 50. The transmission line 14 is preferably formed of gold. The transmission line 14 is preferably formed by gold plating at least at a portion connected to one end of the probe pin 12. Transmission line 14
Is formed on one side of the holding substrate 16,
May be formed on both sides. Further, the holding substrate 16 may be a multilayer wiring substrate.

It is preferable that the metal layer 20 and the transmission line 14 are connected via the gold bump 22. Since the portion connected to one end of the metal layer 20 and one end of the probe pin 12 of the transmission line 14 is formed by gold plating, the probe pin 12 and the transmission line 14 can be closely connected. Therefore, the strength of the probe card 10 can be increased.

The probe pin 12 preferably has, at the other end, a projection 24 that contacts the terminal 52. Protrusion 24
Is preferably a quadrangular pyramid or a truncated quadrangular pyramid. If the other end of the probe pin 12 is in electrical contact with the terminal 52 of the electronic component 50, the protrusion 24 scrubs with the terminal 52. The contact resistance with the terminal 52 can be reduced.

FIG. 1A shows a state where the probe pins 12 are not in contact with the terminals 52 of the electronic component 50. Figure 1
(B) shows that the probe pin 12 is connected to the terminal 52 of the electronic component 50.
Shows the state in contact with. As shown in FIG. 1B, after the protruding portion 24 of the probe pin 12 is brought into contact with the terminal 52,
The protrusion 24 is scrubbed to the terminal 52 by overdrive. The overdrive is preferably about 100 μm. In the present embodiment, as indicated by a broken line, an electric signal is supplied to the terminal 52 of the electronic component 50 through a low-resistance current path via the transmission line 14, the gold bump 22, the metal layer 20, and the protrusion 24. Therefore, the electronic component 5
It is possible to supply a high-speed electric signal to 0 with good characteristics.

FIG. 2 shows the probe card 10 shown in FIG.
FIG. The probe pins 12 are attached to the holding substrate 1
6 is curved in the opposite direction. The plurality of probe pins 12 are provided side by side on the holding substrate 16. In the present embodiment, the length of the probe pin 12 is about several hundred μm.
m is preferable. Preferably, the plurality of probe pins 12 are formed at a pitch of about 100 μm or less.

In this embodiment, the probe pins 12
Has an amorphous alloy layer 18, so that the probe pin 12 can be easily curved only by heating the probe pin 12 to the supercooled liquid zone. Therefore, the probe pins 12 can be easily formed with a narrow pitch of about 100 μm or less. Therefore, the high-frequency transmission characteristics of the probe pin 12 can be significantly improved.

FIG. 3 is a schematic view showing a process of manufacturing the probe pin 12 according to one embodiment of the present invention. First,
A substrate 100 is prepared. Next, as shown in FIG. 3A, a protective film 102 is formed on the surface of the substrate 100. In the present embodiment, the substrate 100 is a silicon substrate,
The protective film 102 is a silicon oxide film formed by thermally oxidizing the substrate 100. Further, the substrate 100 preferably has a surface crystal orientation of (100).

Subsequently, as shown in FIG.
At 00, the protective film 102 in the region where the groove is to be formed is removed by etching. The etching is preferably performed by wet etching using hydrofluoric acid or a hydrofluoric acid buffer solution or the like. Next, as shown in FIG. 3C, using the protective film 102 as a mask, a groove 104 is formed on the substrate 100 by anisotropic etching to reduce the size of the substrate 100 from the upper surface to the lower surface. The groove 104 is preferably formed to have substantially the same size as the protrusion 24 of the probe pin 102. In this embodiment, the groove 104 is formed by wet anisotropic etching using a potassium hydroxide solution or the like heated to about 70 ° C. In this case, the groove 104 is
It is preferably formed in a square pyramid shape or a truncated square pyramid shape surrounded by a plane having a surface crystal orientation of 0 (111). Next, as shown in FIG. 3D, the protective film 102 is removed by wet etching using hydrofluoric acid or a hydrofluoric acid buffer solution or the like.

Subsequently, as shown in FIG. 3E, a sacrificial layer 106 for forming the amorphous alloy layer 18 by lift-off is formed on the substrate 100, and a sacrificial layer in a region where the amorphous alloy layer 18 is to be formed is formed. 106 is removed. The sacrificial layer 106 is preferably removed so that the other end of the amorphous alloy layer 18 is formed in the groove 104 of the substrate 100. Preferably, the sacrificial layer 106 has a thickness of 10 μm or more. The thickness of the sacrificial layer 106 may be greater than the thickness of the amorphous alloy layer 18. The sacrificial layer 106
It preferably has a heat resistance of 300 ° C. or higher. Sacrificial layer 1
06 may be formed of a metal such as aluminum which is easily dissolved in an acid or an alkali. Or, the sacrifice layer 10
6 may be formed of, for example, a resist which is easily dissolved in an organic solvent, and a negative resist having high viscosity and high heat resistance which is thickly deposited thereon. The sacrificial layer 106 may be a single layer or a plurality of layers.

After the sacrifice layer 106 in the region where the amorphous alloy layer 18 is to be formed is removed by etching, the surface of the substrate 100 is preferably treated with hydrofluoric acid, a hydrofluoric acid buffer solution, oxygen plasma or an ion gun. By performing the surface treatment of the substrate 100, the substrate 10
The sacrificial layer 106 remaining on the surface of the
When the resist 6 is a resist, it is possible to remove deposits and adsorbed substances such as an organic solvent used for developing the resist. Therefore, a decrease in the adhesion strength between the substrate 100 and the amorphous alloy layer 18 can be prevented, and the yield in the manufacturing process of the probe card 10 can be improved.

Subsequently, as shown in FIG.
The amorphous alloy layer 18 is formed on the sacrifice layer 106 and the sacrificial layer 106. In the present embodiment, the amorphous alloy layer 18
Is formed by depositing an amorphous alloy by a sputtering method. The amorphous alloy layer 18 in an amorphous alloy state can be formed by the sputtering method. In this case, the amorphous alloy layer 18
Is preferably formed on the substrate 100 by increasing the sputter output at a high temperature of about 300 ° C. By increasing the sputter output, the amorphous alloy layer 18 can be formed relatively thick in a short time. In the present embodiment, the sacrificial layer 106 is removed so that the other end of the probe pin 12 is formed in the groove 104 of the substrate 100.
4 is formed so that the other end of the probe pin 12 is provided.

Subsequently, as shown in FIG. 3G, the sacrifice layer 106 and the amorphous alloy layer 18 formed on the sacrifice layer 106 are removed. When the sacrifice layer 106 is formed of, for example, a metal such as aluminum, the sacrifice layer 106 is dissolved and removed with an acid or alkali aqueous solution such as an acetic acid aqueous solution. When the sacrifice layer 106 is formed of, for example, a resist, the sacrifice layer 106 is dissolved and removed with an organic solvent. The solution or solvent for removing the sacrificial layer 106 preferably has an etching rate ratio of the rate at which the sacrificial layer 106 is etched to the rate at which the substrate 100 or the amorphous alloy layer 18 is etched is 5 to 100 or more. By removing the sacrificial layer 106, the amorphous alloy layer 18 formed on the sacrificial layer 106 is also removed, and the amorphous alloy layer 18 forming the probe pins 12 is formed on the substrate 100.
Get.

Next, as shown in FIG. 3F, a metal layer 20 is formed on the amorphous alloy layer 18. Metal layer 20
Is preferably formed of a low resistivity conductive material. In the present embodiment, the metal layer 20 is formed by growing gold (Au) by a plating method. The metal layer 20 may be formed by vapor deposition or sputtering, but also in this case, it is preferable that one end of the probe pin 12 be formed by plating. When the metal layer 20 is formed by plating, first, a metal thin film is formed on the entire substrate 100 by sputtering. Thereafter, a portion other than the portion to be plated is covered with a thick-film resist and plated. Then, after the plating process, the thick film resist is removed, and the unnecessary portion of the metal thin film is etched and removed by milling or the like.

In another example, the metal layer 20 is
In the step shown in (f), the substrate 100 and the sacrificial layer 10
After forming the amorphous alloy layer 18 on the metal layer 6, a thin metal film may be formed on the amorphous alloy layer 18 by a sputtering method. Also in this case, the metal layer 20 is preferably formed at one end of the probe pin 12 by a plating method.

Subsequently, as shown in FIG.
The portion including the groove 104 of the layer 00 and the portion in contact with the other end of the amorphous alloy layer 18 is removed by etching to form a through hole 110 in the substrate 100. Through hole 110
Is inductively coupled plasma etching (ICP) from the back side of the surface of the substrate 100 on which the amorphous alloy layer 18 is formed.
Alternatively, it is preferably formed by wet anisotropic etching using a potassium hydroxide aqueous solution or the like. Through hole 11
0 is formed so that the other end of the probe pin 12 is free and only one end has a cantilever structure held by the substrate 100.

Next, as shown in FIG. 3J, the probe pin 12 is bent using the pressing jig 120. The pressing jig 120 has a substrate and a protrusion provided on the substrate for pressing the probe pins 12. It is preferable that the protrusion is formed so as to be inserted into the through hole 110. The pressing jig 120 is formed to have a protruding portion by, for example, wet anisotropic etching of a silicon substrate.

In order to press the probe pin 12 using the pressing jig 120 formed as described above, the through-hole 110 and the pressing jig 12 are pressed using, for example, a contact aligner.
Align with 0. Next, the amorphous alloy layer 1
The amorphous alloy layer 18 is heated so that the amorphous alloy forming 8 becomes a supercooled liquid region. When the amorphous alloy forming the amorphous alloy layer 18 contains palladium as a main component, the amorphous alloy
The heating is preferably performed at 0 ° C to 400 ° C, more preferably at 380 ° C. Amorphous alloy layer 18
Is preferably heated under reduced pressure or under vacuum.

Subsequently, the probe pin 12 is pressed by the protruding portion of the pressing jig 120 so that the probe pin 1
Curve 2 In this case, it is preferable that the probe pin 12 be pressed by the pressing jig 120 so that the other end of the probe pin 12 bends toward the substrate 100. At this time, it is preferable to press the probe pins 12 so that the probe pins 12 are curved in the direction of the substrate 100 by about 50 μm to 150 μm. Preferably, the probe pins 12 are pressed in the direction of the substrate 100 while heating the amorphous alloy layer 18. Pressing of the probe pin 12 by the pressing jig 120 and heating may be performed simultaneously. Further, heating may be started after the probe pins 12 are pressed in the direction of the substrate 100. Through the above steps, as shown in FIG. 3K, the probe pins 12 having the other end of the amorphous alloy layer 18 curved in the direction of the substrate 100 are formed.

FIG. 4 is a schematic view showing a step of manufacturing the holding substrate 16 according to one embodiment of the present invention. FIG. 4 (a)
First, the holding substrate 16 is prepared as shown in FIG. The holding substrate 16 is preferably formed of an organic material such as polyimide or epoxy, or a ceramic material such as alumina. Next, as shown in FIG. 4B, the transmission line 14 is formed on the holding substrate 16.

Subsequently, as shown in FIG. 4C, a gold bump 22 is formed on the transmission line 14. In another example,
The gold bump 22 may be provided at one end of the amorphous alloy layer 18. The gold bump 22 may be formed using a bump bonder, or may be formed by plating. Gold bump 2
4 preferably has a thickness sufficient to absorb the surface roughness of the substrate 100 and the holding substrate 16 shown in FIG. In the present embodiment, the gold bump 24 has a thickness of about 10 μm.

FIG. 5 is a schematic view showing a step of joining the probe pins 12 shown in FIG. 3 to the wiring board 14 shown in FIG. As shown in FIG. 5A, first, one end of the probe pin 12 is aligned with the gold bump 24 formed on the holding substrate 16. Next, as shown in FIG. 5B, one end of the amorphous alloy layer 18 is bonded to the holding substrate 16. Then, one end of the amorphous alloy layer 18 is thermocompression-bonded to the holding substrate 16. The positioning of the probe pins 12 on the holding substrate 16 and the joining of the probe pins 12 to the holding substrate 16 are preferably performed by a series of operations using a flip chip bonder or the like. The thermocompression bonding is preferably performed at a temperature at which the amorphous alloy layer 18 is not heated to the supercooled liquid region. In this embodiment, the thermocompression bonding is about 30
Perform at 0 ° C. In another example, if the surface roughness of the substrate 100 and the holding substrate 16 can be suppressed, the probe pin 12 and the transmission line 14 may be directly thermocompression-bonded without using the gold bump 24.

Next, as shown in FIG.
Remove 0. The substrate 100 may be removed by etching a portion connected to the probe pin 12. The etching is preferably performed by, for example, wet etching using an aqueous solution of potassium hydroxide or dry etching using XeF2.

In this embodiment, first, a plurality of probe pins 12 are formed at a fine pitch on the silicon substrate 100, and then the plurality of probe pins 12 are collectively transferred and mounted on the holding substrate 16 having good transmission characteristics. Can be. Therefore, the probe card 10 in which the pitch of the probe pins 12 is fine can be easily manufactured. Therefore, the probe card 10 capable of testing the characteristics of a gigahertz-band high-frequency integrated circuit can be quickly and inexpensively provided.

FIG. 6 is a schematic view showing another example of the process of manufacturing the probe pin 12 according to one embodiment of the present invention. In this embodiment, as shown in FIG. 6A, as shown in FIG. 3E, after removing a part of the sacrificial layer 106, the amorphous alloy layer 18 and the substrate 100 are brought into close contact with each other. Layer 114 may be formed over substrate 100.
In this case, a thin layer 108 of an amorphous alloy is formed on the adhesion layer 114, as shown in FIG. Adhesion layer 10
The thickness of 8 is preferably about 10 nm.

When the amorphous alloy contains palladium as a main component, the adhesion layer 114 preferably contains a titanium nickel alloy having a composition ratio of about 1: 1. When the amorphous alloy contains palladium as the main component and copper, the adhesion layer 114 may include a first adhesion layer containing chromium or titanium and a second adhesion layer containing copper. The first adhesion layer is the substrate 10
0, and the amorphous alloy layer 18 is preferably formed on the second adhesion layer.

Further, as shown in FIG. 6C, a barrier layer 116 for preventing the metal contained in the metal layer 20 from diffusing into the amorphous alloy layer 18 is formed between the amorphous alloy layer 18 and the metal layer 20. May be. Barrier layer 116 is preferably platinum. The barrier layer 116 has a thickness of 100 nm.
It is preferred to be on the order of magnitude. By forming the barrier layer 116 between the amorphous alloy layer 18 and the metal layer 20, even when the amorphous alloy layer 18 is heated to bend, the metal contained in the metal layer 20 diffuses into the amorphous alloy layer 18. Never do.

The amorphous alloy layer 18 and the metal layer 2
0 to the amorphous alloy layer 1
8 may be formed. The adhesion layer 118 may be provided between the amorphous alloy layer 18 and the barrier layer 116. Like the adhesion layer 114, the adhesion layer 118 preferably includes a titanium-nickel alloy having a composition ratio of 1: 1 when the amorphous alloy is mainly composed of palladium. If the amorphous alloy contains copper with palladium as the main component,
The adhesion layer 114 may include a first adhesion layer containing chromium or titanium and a second adhesion layer containing copper. Preferably, the first adhesion layer is formed on the substrate 100, and the amorphous alloy layer 18 is formed on the second adhesion layer. When the barrier layer 116 made of platinum is formed on the amorphous alloy layer 18,
As the adhesion layer 118, only the second adhesion layer containing copper may be used.

Next, as shown in FIG. 6D, a metal layer 20 is formed on the barrier layer 116 and / or the adhesion layer 118. Forming the amorphous alloy layer 18, forming the adhesion layer 114, forming the barrier layer 116 and / or the adhesion layer 118, and forming the metal layer 20.
Is preferably performed in the same apparatus by a sputtering method.

FIG. 7 is a schematic view showing another example of the process of manufacturing the probe pin 12 according to one embodiment of the present invention. First, a substrate 100 is prepared as shown in FIG. Next, as shown in FIG. 7B, a sacrifice layer 106 for forming the amorphous alloy layer 18 by lift-off.
Is formed on the substrate 100, and the sacrifice layer 106 in the region where the amorphous alloy layer 18 is to be formed is removed. Subsequently, FIG.
As shown in (c), a thin layer 108 containing an amorphous alloy is formed on the substrate 100 and the sacrificial layer 106. Thereafter, as shown in FIGS. 7D to 7H, the probe pins 12 are formed in the same manner as in the first embodiment shown in FIG. The probe pin 12 formed in this way is shown in FIG.
In the same manner as in the first embodiment, the probe card is formed by bonding to the wiring board 16.

FIG. 8 is a schematic view showing another example of the process of manufacturing the probe card 10 according to one embodiment of the present invention. First, a substrate 100 is prepared as shown in FIG. Next, as shown in FIG. 8B, a sacrifice layer 106 for forming the amorphous alloy layer 18 by lift-off.
Is formed on the substrate 100, and the sacrifice layer 106 in the region where the amorphous alloy layer 18 is to be formed is removed.

Subsequently, as shown in FIG.
00 and the sacrificial layer 106 in a later step.
A separation sacrifice layer 112 for facilitating removal of 0 from the probe card 10 is formed. Release sacrificial layer 112
Is the heating deformation of the amorphous alloy layer in a later step,
It is preferably formed of a material that can withstand chemical treatment such as etching. The separation sacrifice layer 112 is preferably, for example, a metal thin film. In this embodiment, the peeling sacrificial layer 112 contains chromium and is formed to a thickness of about 100 nm.

Thereafter, as shown in FIGS. 8 (d) to 8 (k), the probe card 10 is formed in the same manner as in the examples shown in FIGS. 3, 4 and 5. Next, as shown in FIG. 8 (l), the peeling sacrificial layer 112 is etched with a mixed solution of perchloric acid and ceric ammonium nitrate,
The substrate 100 and the peeling sacrifice layer 112 are removed to obtain the probe card 10.

In this embodiment, the peeling sacrificial layer 112 is
Since it contains chromium, it has an adhesion strength enough to adhere to the substrate 100 in the middle of the process and a resistance to chemicals such as etching.
0 can be easily removed from the probe card 10.

FIG. 9 is a schematic view showing a part of another example of the process of manufacturing the probe pin 12 according to one embodiment of the present invention. First, a substrate 100 is prepared as shown in FIG. Next, as shown in FIG. 9B, the sacrificial layer 1 for forming the amorphous alloy layer 18 by lift-off is used.
06 is formed on the substrate 100 and the amorphous alloy layer 18 is formed.
The sacrifice layer 106 in the region where the is to be formed is removed. continue,
As shown in FIG. 9C, the substrate 1 is
The surface of No. 00 is irradiated with an ion beam. Ion gun
It is preferable to use argon gas or oxygen gas as the ion source. By irradiating the surface of the substrate 100 with an ion beam, the surface of the substrate 100 is roughened. Substrate 100
By roughening the surface of
The substrate 100 can be easily removed from the probe card 10.

Before the surface of the substrate 100 is irradiated with the ion beam, aluminum may be deposited on the surface of the substrate 100 by a sputtering method. By depositing aluminum on the surface of the substrate 100, the aluminum diffuses to the surface of the substrate 100 during irradiation with the ion beam. In this case, the substrate 100 can be more easily removed from the probe card 10 in the final step.

FIG. 10 is a schematic view showing a part of another example of the process of manufacturing the probe card 10 according to one embodiment of the present invention. In this embodiment, as shown in FIG. 10A, the gold bumps 22 are connected to the metal layers 20 of the probe pins 12.
Formed at the upper end. The gold bump 22 is preferably formed by a bump bonder. The gold bump 22 may be formed by gold plating. 10 (b) to 10
As shown in (d), a probe card 10 is formed in the same manner as in the first embodiment shown in FIG.

In this embodiment, the probe card 10
Is large on the order of several hundred mm, and it is difficult to form the gold bumps 22 on the transmission lines 14 of the holding substrate 16, the gold bumps 22 are placed on the probe pins 12 side. Since it is formed, the holding substrate 16 and the probe pins 12 can be securely joined.

FIG. 11 is a schematic view showing a part of another example of the process of manufacturing the probe card 10 according to one embodiment of the present invention. In this embodiment, as shown in FIG. 11A, the gold bump 22 is formed immediately after the metal layer 20 is formed on the amorphous alloy layer 18. The gold bump 22
It is preferably formed by plating. Then, FIG.
As shown in FIGS. 11B to 11G, the probe card 10 is formed in the same manner as in the first embodiment shown in FIGS. In the present embodiment, the gold bumps 22 are formed by plating immediately after the metal layer 20 is formed.
The gold bumps 22 can be formed in a state where the metal bumps are completely adhered to the substrate 100. Therefore, the subsequent steps can be performed with high yield.

According to the method of manufacturing the probe card 10 in the present embodiment, since the probe pins 12 are formed of an amorphous alloy, the probe pins 12 are pressed against the supercooled liquid region and heated, so that a curved shape is obtained. A plurality of probe pins 12 can be obtained. Therefore, the probe card 10 in which the probe pins 12 having a fine structure are arranged at a fine pitch can be manufactured.

Further, according to the method of manufacturing the probe card 10 in the present embodiment, after the plurality of probe pins 12 are arranged at a fine pitch on the silicon substrate 100, the holding substrate 1 having the transmission line 14 having high high-frequency characteristics is formed.
Since a plurality of probe pins 12 are collectively mounted and transferred to 6, a probe card 10 having high high-frequency characteristics can be easily manufactured. In addition, the resistance value of the probe pin 12 itself can be reduced by forming the probe pin 12 with the amorphous alloy layer 18 and the metal layer 20. Therefore, the characteristics of the integrated circuit operating at a high frequency can be accurately tested.

As described above, the present invention has been described using the embodiments. However, the technical scope of the present invention is not limited to the scope described in the above embodiments. Various changes or improvements can be added to the above embodiment. It should be noted that embodiments with such changes or improvements may be included in the technical scope of the present invention.
It is clear from the description of the claims.

[0066]

As is apparent from the above description, according to the present invention, it is possible to provide a probe card in which a plurality of fine probe pins are arranged at a fine pitch.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first example of a probe card according to an embodiment of the present invention.

FIG. 2 is a perspective view showing the probe card shown in FIG.

FIG. 3 is a schematic view showing a step of manufacturing a probe pin according to one embodiment of the present invention.

FIG. 4 is a schematic view showing a step of manufacturing a holding substrate according to one embodiment of the present invention.

FIG. 5 is a schematic view showing a step of joining the probe pins shown in FIG. 3 to the wiring board shown in FIG. 4;

FIG. 6 is a schematic view showing another example of a process for manufacturing a probe pin according to an embodiment of the present invention.

FIG. 7 is a schematic view showing another example of a process for manufacturing a probe pin according to an embodiment of the present invention.

FIG. 8 is a schematic view showing another example of the process of manufacturing the probe card according to one embodiment of the present invention.

FIG. 9 is a schematic view showing a part of another example of the process of manufacturing the probe pin according to one embodiment of the present invention.

FIG. 10 is a schematic view showing a part of another example of the process of manufacturing the probe card according to one embodiment of the present invention.

FIG. 11 is a schematic view showing a part of another example of the process of manufacturing the probe card according to one embodiment of the present invention.

[Explanation of symbols]

10: probe card, 12: probe pin, 14: transmission line, 16: holding substrate, 18: amorphous alloy layer,
20 ... metal layer, 22 ... gold bump, 24 ... projection, 50 ...
Electronic components, 52 terminals, 100 substrates, 102 protective films, 104 grooves, 106 sacrificial layers, 110 through holes,
120 ... Pressing jig

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Masaru Miyazaki 1-32-1 Asahicho, Nerima-ku, Tokyo Advantest Co., Ltd. (72) Inventor Shinichi Motoyama 1-32-1 Asahicho, Nerima-ku, Tokyo Company Advantest (72) Inventor Akira Shimokawabe 2-24-7 Tsukushino, Machida-shi, Tokyo (72) Inventor Seiichi Hata 2-32-3 Narusedai, Machida-shi, Tokyo 20-303 Poplargaoka Corp. F-term (reference) 2G003 AA07 AB01 AE03 AG03 AH05 2G011 AA09 AA17 AA21 AC32 AF07 4M106 AA20 BA01 CA70 DD03 DD10 DD15 DD30

Claims (28)

[Claims] 1. A probe card for contacting a terminal of an electronic component and used for testing characteristics of the electronic component, comprising: a probe pin having an amorphous alloy layer, at least a part of which is curved; A probe card, comprising: a holding substrate for holding one end; and a transmission line provided on the holding substrate and electrically connected to the probe pins. 2. The probe card according to claim 1, wherein the probe pins include a metal layer formed on the amorphous alloy layer, and the metal layer is connected to the transmission line. 3. The probe card according to claim 1, wherein the amorphous alloy layer contains palladium. 4. The probe card according to claim 1, wherein the probe pins have protrusions provided at multiple ends. 5. The probe card according to claim 1, comprising a plurality of probe pins provided side by side on the holding substrate. 6. A probe pin that contacts a terminal of an electronic component and is used for testing characteristics of the electronic component,
A probe pin having an amorphous alloy layer and being at least partially curved. 7. A probe card manufacturing method for manufacturing a probe card used to test a characteristic of an electronic component by contacting a terminal of the electronic component, the method including an amorphous alloy layer having one end connected to a substrate. Forming the probe pin, heating the amorphous alloy layer, pressing the other end of the probe pin so that at least a part of the probe pin is curved, and transmitting the conductive material. A method for manufacturing a probe card, comprising: preparing a holding substrate on which a line is formed; and joining the one end of the probe pin to the holding substrate. 8. The probe card manufacturing method according to claim 7, wherein the amorphous alloy layer is formed by depositing an amorphous alloy by a sputtering method. 9. The method according to claim 7, wherein the amorphous alloy layer is formed by depositing an amorphous alloy containing palladium. 10. The step of forming the probe pins includes the steps of: preparing a substrate; forming an amorphous alloy layer in a predetermined region of the substrate; and forming one of the substrate including a part of the predetermined region. The method according to claim 7, further comprising the step of: removing a portion. 11. The step of removing a portion of the substrate includes removing a portion of the substrate so as to form an opening in the substrate, and pressing the probe pins includes inserting the probe into the opening. 11. The amorphous alloy layer is pressed by a jig having a protruding portion.
4. The method for manufacturing a probe card according to item 1. 12. The step of forming the amorphous alloy layer includes forming a sacrificial layer on the substrate.
Removing the sacrificial layer in the predetermined region, forming the amorphous alloy layer by sputtering, and removing the amorphous alloy layer formed on the sacrificial layer and the sacrificial layer. The method for manufacturing a probe card according to claim 10, wherein: 13. The method according to claim 13, wherein the step of forming the amorphous alloy layer includes the step of roughening the substrate, and forming the amorphous alloy layer on the roughened substrate. 13. The method for manufacturing a probe card according to any one of 10 to 12. 14. The step of forming the probe pins further includes the step of forming an adhesion layer for bringing the substrate and the amorphous alloy layer into close contact with each other on the substrate,
The method according to claim 10, wherein the step of forming the amorphous alloy layer comprises forming the amorphous alloy layer on the adhesion layer. 15. The method according to claim 14, wherein the step of forming the adhesion layer includes forming a layer containing a titanium-nickel alloy having a composition ratio of about 1: 1. 16. The step of forming the adhesion layer includes forming a first adhesion layer containing chromium or titanium on the substrate, and forming a second adhesion layer containing copper on the first adhesion layer. The method according to claim 14, wherein the step of forming the amorphous alloy layer includes forming the amorphous alloy layer on the second adhesion layer. 17. The method according to claim 17, further comprising: forming a groove that reduces from an upper end to a lower end of the substrate, wherein the forming the amorphous alloy layer includes forming the other end of the amorphous alloy layer in the groove of the substrate. The method according to claim 10, wherein the amorphous alloy layer is formed on the substrate. 18. The method according to claim 18, wherein forming the groove includes forming a protective film on a surface of the substrate, removing the protective film in a region where the groove is to be formed, and using the protective film as a mask. Forming the groove by anisotropic etching. The method of manufacturing a probe card according to claim 17, further comprising: 19. The method according to claim 7, further comprising forming a transmission line including a conductive material on the holding substrate. 20. The method according to claim 20, wherein the step of forming the probe pins includes forming the plurality of probe pins on the substrate, and the step of bonding includes arranging and bonding the plurality of probe pins to the holding substrate. A method for manufacturing a probe card according to claim 7. 21. The bonding step, comprising: bonding the one end of the probe pin to the holding substrate; and thermocompression bonding the one end of the probe pin to the holding substrate. Claim 7
4. The method for manufacturing a probe card according to item 1. 22. The bonding step, wherein a bump is formed on at least one of the one end of the probe pin and the holding substrate, and the one end of the probe pin is bonded to the holding substrate via the bump. The method according to claim 7, further comprising a step of: thermocompression-bonding the one end of the probe pin to the holding substrate. 23. The probe card manufacturing method according to claim 7, further comprising a step of removing a residue of said substrate. 24. The step of forming the probe pins further comprises the step of forming a separation sacrificial layer between the substrate and the amorphous alloy layer, and the step of removing the remainder of the substrate comprises the step of forming the separation sacrificial layer. 24. The method according to claim 23, wherein the remaining substrate is removed. 25. The probe card manufacturing method according to claim 7, wherein forming the probe pins further comprises forming a metal layer on the amorphous alloy layer. 26. The step of forming the probe pin, comprising: forming a barrier layer between the amorphous alloy layer and the metal layer for preventing metal contained in the metal layer from diffusing into the amorphous alloy layer. The method for manufacturing a probe card according to claim 25, further comprising: 27. The step of forming the probe pin further includes the step of forming an adhesion layer for adhering the amorphous alloy layer and the metal layer on the amorphous alloy layer, and forming the metal layer. The method according to claim 25, wherein the metal layer is formed on the adhesion layer. 28. A method of manufacturing a probe pin for contacting a terminal of an electronic component and using the same for testing characteristics of the electronic component, the method comprising forming an amorphous alloy layer having one end connected to a substrate. A step of heating the amorphous alloy layer, and a step of pressing the other end of the amorphous alloy layer so that at least a part of the amorphous alloy layer is curved. .