JPH06265575A - Fabrication of probe head - Google Patents

Fabrication of probe head

Info

Publication number
JPH06265575A
JPH06265575A JP8132693A JP8132693A JPH06265575A JP H06265575 A JPH06265575 A JP H06265575A JP 8132693 A JP8132693 A JP 8132693A JP 8132693 A JP8132693 A JP 8132693A JP H06265575 A JPH06265575 A JP H06265575A
Authority
JP
Japan
Prior art keywords
conductive rubber
contact
probe head
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8132693A
Other languages
Japanese (ja)
Other versions
JP3345948B2 (en
Inventor
Masamitsu Takanami
正充 高波
Kazuo Inoue
和夫 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Priority to JP08132693A priority Critical patent/JP3345948B2/en
Publication of JPH06265575A publication Critical patent/JPH06265575A/en
Application granted granted Critical
Publication of JP3345948B2 publication Critical patent/JP3345948B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a highly accurate, high density, multiterminal probe head by bonding contact electrodes of a circuit pattern corresponding to LSI electrode pads to conductive rubber contactors having one end applied with a metal film through an adhesive. CONSTITUTION:A resist layer 12 is formed on a bored copper foil 11 and then exposed and developed using the hole to make a hole 13 through the foil 11 and the layer 12 thus forming a film substrate 14. The hole 13 is then filled with a conductive rubber which is subsequently hardened to form a conductive rubber contactor 4. A metal film is adhered thereto by means of plating or the like. The layer 12 is then peeled off such that the contactor 4 projects from at least one plane of the substrate 14. A circuit pattern including contact electrodes 3 previously provided on the substrate 2 while corresponding to the LSI electrode pads is pressure bonded through an organic adhesive 5 while aligning the contact electrodes 3 formed on the circuit board by thin film forming technology with the contactors 4. Subsequently, the foil 11 is removed by etching thus completing a probe head 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はプローブヘッドの製造方
法に関し、特に、高密度・多端子化に対応したLSI検
査装置に用いられるプローブヘッドの製造方法に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a probe head, and more particularly, to a method of manufacturing a probe head used in an LSI inspection apparatus which is compatible with high density and multiple terminals.

【0002】[0002]

【従来の技術】近年、LSIの電極はASIC,液晶駆
動用LSI等に見られるように狭ピッチ、多電極化が進
み、ピッチでは100μmを割り、電極数では200端
子を大きく上回るものが実用化されており、さらに近い
将来にはより狭ピッチ、多電極化が進むものと予測され
ている。このような狭ピッチ,多電極なLSIを電気的
に測定するに当たりLSI電極との接触を行うプローブ
ヘッドの製造方法が大きな問題となってきている。
2. Description of the Related Art In recent years, the electrodes of LSIs have become narrower in pitch as shown in ASICs, liquid crystal driving LSIs, etc., and the number of electrodes has been increased. In the near future, it is expected that the pitch will become narrower and the number of electrodes will increase. When electrically measuring such a narrow-pitch, multi-electrode LSI, a method of manufacturing a probe head that makes contact with the LSI electrode has become a serious problem.

【0003】また、一方メモリLSIに見られるように
メモリ容量の増大化が進められており、このメモリ容量
の増大化に伴う測定時間の長時間化は測定装置の占有時
間の増大を招き測定コストの上昇をもたらす等の問題を
抱えており、この問題を解決するために、多数のLSI
チップを同時に測定し測定装置の占有時間を低減する試
みが進められている。しかし、このような多数のLSI
チップを同時に測定するためには、マトリックス状に配
置された多端子なプローブヘッドが必要とされる。
On the other hand, as seen in the memory LSI, the memory capacity is being increased, and the lengthening of the measurement time accompanying the increase of the memory capacity leads to an increase in the occupying time of the measuring device and the measurement cost. However, in order to solve this problem, a large number of LSI
Attempts are being made to simultaneously measure chips and reduce the time occupied by the measuring device. However, many such LSIs
In order to simultaneously measure the chips, a multi-terminal probe head arranged in a matrix is required.

【0004】以上のごとく、今後のさらなるLSIの狭
ピッチ,多電極,多容量化に対しては高密度,多端子の
プローブヘッドの製造技術が重要な課題となっている。
As described above, in order to further reduce the pitch, the number of electrodes, and the capacity of LSIs in the future, a technique for manufacturing a probe head having a high density and a large number of terminals is an important issue.

【0005】従来用いられているLSI検査装置用プロ
ーブヘッドの構造を図6を参照しつつ説明する。
The structure of a conventionally used probe head for an LSI inspection device will be described with reference to FIG.

【0006】図6において、銅貼積層板等のプリント回
路基板52に所定の回路パターン53が形成され、この
プリント回路基板52には被測定LSI電極チップに対
応する位置に位置決め用の開口部54が設けられてい
る。さらに、タングステン等の細針からなるプローブ針
55は、プリント回路基板52に固定された弾性材料か
らなる支持体56によって支持されている。プローブ針
55の一端は、LSIの電極パッドに対応して位置決め
され、プローブ針55の他端は、プリント回路基板52
の回路パターン53に半田付等によって接続されてい
る。このようにしてプローブヘッド51が形成されてい
た。
In FIG. 6, a predetermined circuit pattern 53 is formed on a printed circuit board 52 such as a copper-clad laminated board, and the printed circuit board 52 has an opening 54 for positioning at a position corresponding to the LSI electrode chip to be measured. Is provided. Further, the probe needle 55 made of a thin needle such as tungsten is supported by the support body 56 made of an elastic material and fixed to the printed circuit board 52. One end of the probe needle 55 is positioned corresponding to the electrode pad of the LSI, and the other end of the probe needle 55 is positioned at the printed circuit board 52.
Is connected to the circuit pattern 53 by soldering or the like. In this way, the probe head 51 was formed.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、従来例
のプローブヘッドにおいては、タングステン等の細針か
らなるプローブ針55は、LSI電極パッドから離れた
箇所に設けられた支持体56とプリント回路基板52の
回路パターン53部での接続とによって位置決め支持さ
れる構造であるため、プローブ針55の植設精度は平面
方向で±10〜20μm程度,高さ方向で±50μm程
度のばらつきを有している。このようなプローブヘッド
51を用いてLSI電極パッドに接触し、LSIの測定
を行う場合、プローブ針55の高さのばらつきおよびプ
ローブヘッド51の取り付け時の傾き等のため、LSI
電極パッドの全端子を接触させるためにはプローブヘッ
ド51にオーバードライブをかける必要がある。また、
LSIの電極パッドはアルミニウムから形成されている
ためその表面には酸化膜が形成されており、接触を安定
に行うにはこの酸化膜を破って接触を取ることが必要で
あり、プローブヘッド51にオーバードライブをかけて
対応することになる。このオーバードライブによってプ
ローブ針55はLSI電極パッド表面ですべり、このプ
ローブ針55のすべりによってLSI電極パッド周辺の
窒化珪素,燐珪酸ガラス,ポリイミド等から成るパッシ
ベーション膜を破壊したり、LSI電極パッド近傍に設
けられた素子領域に損傷を与える等の問題を抱えてい
る。
However, in the probe head of the conventional example, the probe needle 55 made of a fine needle such as tungsten has the support 56 and the printed circuit board 52 provided at a position apart from the LSI electrode pad. Because of the structure in which the probe needle 55 is positioned and supported by the connection at the circuit pattern 53, the implantation accuracy of the probe needle 55 has a variation of about ± 10 to 20 μm in the plane direction and a variation of about ± 50 μm in the height direction. . When such a probe head 51 is used to make contact with an LSI electrode pad to measure an LSI, the height of the probe needle 55 may vary and the probe head 51 may be tilted when the LSI is attached.
In order to contact all the terminals of the electrode pad, it is necessary to overdrive the probe head 51. Also,
Since the electrode pad of the LSI is made of aluminum, an oxide film is formed on the surface thereof, and it is necessary to break the oxide film to make contact in order to make a stable contact. Overdrive will be applied. This overdrive causes the probe needle 55 to slip on the surface of the LSI electrode pad, and the slip of the probe needle 55 destroys the passivation film made of silicon nitride, phosphosilicate glass, polyimide, etc. around the LSI electrode pad, or near the LSI electrode pad. It has problems such as damage to the provided element region.

【0008】さらに、特に最近の狭ピッチ,多電極LS
Iでは有効電極サイズが60〜80μm口、電極ピッチ
が100μmを下回る等、その寸法は縮小化の一途をた
どっており、従来のプローブヘッド構造では多端子のプ
ローブ針55を平面に対し、および高さに対して精度良
く植設することができず、今後の狭ピッチ,多端子LS
Iの測定に対応することができない等の多くの課題を有
していた。
Furthermore, particularly the recent narrow pitch, multi-electrode LS
In I, the effective electrode size is 60 to 80 μm, the electrode pitch is less than 100 μm, and the size thereof is steadily shrinking. In the conventional probe head structure, the multi-terminal probe needle 55 is placed on a flat surface and a However, it was not possible to plant it accurately, and future narrow pitch, multi-terminal LS
There were many problems such as not being able to deal with the measurement of I.

【0009】そこで、本発明の目的は、上述の問題点を
解消し、高密度・多端子であり高精度なプローブヘッド
の製造方法を提供することにある。
Therefore, an object of the present invention is to solve the above-mentioned problems and to provide a method of manufacturing a probe head having high density and multiple terminals and high accuracy.

【0010】[0010]

【課題を解決するための手段】このような目的を達成す
るために、本発明のプローブヘッドの製造方法は、金属
層および該金属層の少なくとも一面に形成された有機層
とを有し、さらに前記金属層と前記有機層とを貫く貫通
孔を有するフィルム基盤を形成する工程と、前記貫通孔
内に導電ゴムを充填し、前記導電ゴムを硬化することに
より導電ゴム接触子を形成する工程と、前記導電ゴム接
触子の一端に金属膜を形成する工程と前記有機層または
前記金属層を除去し、前記導電ゴム接触子が前記有機層
または前記金属層の少なくとも一面より突出するように
形成する工程と、LSI電極パッドに対応して設けられ
た接点電極を含む回路パターンの接点電極と前記導電ゴ
ム接触子とを位置合わせして接着剤にて前記接点電極と
前記導電ゴム接触子とを接着する工程と、前記金属層を
除去する工程とを含むことを特徴とする。
In order to achieve such an object, a method of manufacturing a probe head according to the present invention has a metal layer and an organic layer formed on at least one surface of the metal layer, and further comprises: A step of forming a film substrate having a through hole penetrating the metal layer and the organic layer; a step of filling a conductive rubber into the through hole and forming a conductive rubber contact by curing the conductive rubber; Forming a metal film on one end of the conductive rubber contact and removing the organic layer or the metal layer so that the conductive rubber contact protrudes from at least one surface of the organic layer or the metal layer. Step, the contact electrode of the circuit pattern including the contact electrode provided corresponding to the LSI electrode pad is aligned with the conductive rubber contactor, and the contact electrode and the conductive rubber contact are made with an adhesive. A step of bonding the door, characterized in that it comprises a step of removing the metal layer.

【0011】なお、本発明における金属膜としては、
金,銀,銅,アルミニウム,ニッケル等の金属膜を使用
することができ、また、金属層としては、銅,アルミニ
ウム,ニッケル,ステンレス等の金属箔を使用すること
ができる。
As the metal film in the present invention,
A metal film of gold, silver, copper, aluminum, nickel or the like can be used, and a metal foil of copper, aluminum, nickel, stainless steel or the like can be used as the metal layer.

【0012】また、導電ゴムとしては、ニッケル,鉄,
カーボンあるいは、ニッケル,鉄等に金メッキコーティ
ングした導電性粒子あるいは、導電性短繊維をシリコー
ンゴム,ウレタンゴム,スチレンブタジエンゴム等のバ
インダー中に分散してなるものを使用することができ
る。
As the conductive rubber, nickel, iron,
It is possible to use conductive particles obtained by coating carbon, nickel, iron or the like with gold plating, or conductive short fibers dispersed in a binder such as silicone rubber, urethane rubber or styrene butadiene rubber.

【0013】さらに、接着剤としては、弾性のある有機
系が好ましく、シリコーン系樹脂,エポキシ樹脂,ウレ
タン系樹脂等からなる接着剤が挙げられる。
Further, as the adhesive, an organic organic material having elasticity is preferable, and an adhesive made of silicone resin, epoxy resin, urethane resin or the like can be mentioned.

【0014】導電ゴムと接着剤とは、密着性等の面から
同じ系統の材質であることが好ましく、耐熱性の面から
導電ゴムがシリコーンゴム,接着剤がシリコーン樹脂で
あることがさらに好ましい。
The conductive rubber and the adhesive are preferably made of the same material in terms of adhesion and the like, and more preferably the conductive rubber is a silicone rubber and the adhesive is a silicone resin in terms of heat resistance.

【0015】[0015]

【作用】本発明によれば、フォトリソグラフィーを主に
用いているため、微細加工を容易に施すことが可能で、
銅箔等の金属層およびレジスト等の有機層の厚みを適宣
に選択することによって導電ゴム接触子の径および高さ
を幅広く選択することができる。
According to the present invention, since photolithography is mainly used, it is possible to easily perform fine processing,
By appropriately selecting the thicknesses of the metal layer such as copper foil and the organic layer such as resist, the diameter and height of the conductive rubber contact can be widely selected.

【0016】また、本発明によれば、微小な導電ゴム接
触子を形成することが可能であり、高密度,多端子なプ
ローブヘッドを作製することができる。さらに、本発明
によれば、先端に金属膜が形成されているため、導電ゴ
ム接触子のみからなる構造に比べ、LSI電極バット上
にある金属酸化被膜を破りやすくなり、なおかつ導電ゴ
ム接触子表面から脱落する導電性粒子を押さえることが
でき、導電ゴム接触子の耐久性が向上する。
Further, according to the present invention, it is possible to form minute conductive rubber contacts, and it is possible to fabricate a probe head having a high density and multiple terminals. Further, according to the present invention, since the metal film is formed on the tip, the metal oxide film on the LSI electrode butt is more easily broken than the structure including only the conductive rubber contactor, and the surface of the conductive rubber contactor is more easily broken. It is possible to suppress the conductive particles that fall off from the conductive rubber contactor, which improves the durability of the conductive rubber contact.

【0017】[0017]

【実施例】以下、図面を参照して、本発明の実施例を詳
細に説明する。
Embodiments of the present invention will now be described in detail with reference to the drawings.

【0018】図1は本発明を適用したプローブヘッドの
構造を示す断面図である。
FIG. 1 is a sectional view showing the structure of a probe head to which the present invention is applied.

【0019】本図中において、2はガラス,セラミッ
ク,銅貼り積層板等からなるベース基板である。ベース
基板2には、薄膜形成法,アディティブ形成法,サブト
ラクティブ形成法等によって一層あるいは多層の回路パ
ターンが形成され、この回路パターンの少なくとも最上
層にはLSI電極パッドに対応する位置に接点電極3が
配置されている。さらに、この接点電極3上に導電ゴム
接触子4が形成されている。また、導電ゴム接触子4の
頂部6を除くベース基板2の全面は回路パターンを保護
する有機系接着剤5により被覆されている。
In the figure, reference numeral 2 is a base substrate made of glass, ceramic, copper-clad laminate, or the like. A single-layer or multi-layer circuit pattern is formed on the base substrate 2 by a thin film forming method, an additive forming method, a subtractive forming method, or the like. At least the uppermost layer of this circuit pattern has contact electrodes 3 at positions corresponding to the LSI electrode pads. Are arranged. Further, a conductive rubber contact 4 is formed on the contact electrode 3. Further, the entire surface of the base substrate 2 except the top 6 of the conductive rubber contact 4 is covered with an organic adhesive 5 for protecting the circuit pattern.

【0020】この有機系接着剤5は導電ゴム接触子4を
補強する役目も果たす。このようにプローブヘッド1は
形成されている。
The organic adhesive 5 also serves to reinforce the conductive rubber contact 4. The probe head 1 is formed in this way.

【0021】(実施例1)図2は、このプローブヘッド
1の製造方法の第1の実施例を示す工程である。
(Embodiment 1) FIG. 2 is a step showing a first embodiment of a method for manufacturing the probe head 1.

【0022】銅箔11をフォトリソグラフィー,エッチ
ング,レーザー加工等の手法によってLSI電極パッド
に対応した位置に穴加工を施す。該穴加工を施した銅箔
11にフィルム状あるいは液状のポジ型レジストを貼り
合わせあるいはコーティングによってレジスト層12を
形成する。銅箔11形成された穴を利用してセルフアラ
イメントにてレジスト層12を露光,現像し、銅箔1
1,レジスト層12を貫く貫通穴13を形成する。貫通
穴13が形成された銅箔11とレジスト層12都から成
るフィルム基板14を形成する(図2(a))。
Holes are formed in the copper foil 11 at positions corresponding to the LSI electrode pads by methods such as photolithography, etching, and laser processing. A resist layer 12 is formed by pasting or coating a film-like or liquid positive resist on the copper foil 11 on which the holes have been formed. The copper foil 1 is exposed and developed by self-alignment using the holes formed in the copper foil 11.
1. Form a through hole 13 penetrating the resist layer 12. A film substrate 14 including a copper foil 11 having a through hole 13 and a resist layer 12 is formed (FIG. 2A).

【0023】次に、前記貫通穴13内に、導電ゴムを充
填し、硬化することにより導電ゴム接触子4を形成する
(図2(b))。
Next, conductive rubber is filled in the through hole 13 and cured to form the conductive rubber contact 4 (FIG. 2B).

【0024】次に、形成された導電ゴム接触子4の上
に、金属膜をメッキ法,電着法,蒸着法,スパッタ法等
の手法を用いて付着させたのち、導電ゴム接触子4の上
に形成する(図2(c))。
Next, a metal film is deposited on the formed conductive rubber contact 4 by a method such as a plating method, an electrodeposition method, an evaporation method or a sputtering method, and then the conductive rubber contact 4 is formed. It is formed on top (FIG. 2 (c)).

【0025】次に、レジスト層12を剥離除去し、導電
ゴム接触子4がフィルム基板14の少なくとも一面より
突出する如く形成する(図2(d))。
Next, the resist layer 12 is peeled and removed, and the conductive rubber contact 4 is formed so as to project from at least one surface of the film substrate 14 (FIG. 2D).

【0026】次に、予めベース基板2上にLSI電極パ
ッドに対応して設けられた接点電極3を含む回路パター
ンを、薄膜形成法あるいはアディティブメッキ形成法等
によって精度良く形成した回路基板の接点電極3と前記
フィルム基板14の導電ゴム接触子4とを位置決めする
が如く、有機系接着剤5によって圧接接着して、回路基
板とフィルム基板14を一体化する(図2(e))。
Next, a circuit pattern including a contact electrode 3 provided in advance on the base substrate 2 corresponding to the LSI electrode pad is accurately formed by a thin film forming method or an additive plating forming method. 3 and the conductive rubber contactor 4 of the film substrate 14 are positioned by pressure bonding with an organic adhesive 5 to integrate the circuit substrate and the film substrate 14 (FIG. 2 (e)).

【0027】しかる後、銅箔11をエッチング除去する
ことによりプローブヘッド1を作製する(図2
(f))。
Thereafter, the copper foil 11 is removed by etching to manufacture the probe head 1 (see FIG. 2).
(F)).

【0028】上記工程ではレジスト層12をポジ型レジ
ストを用いて説明してきたが、同工程は、ポジ型レジス
トの代わりにネガ型レジストあるいは他の有機系樹脂材
料を用いて層を形成することも可能であり、この場合、
穴加工はドライエッチング等の手段によって行われる。
In the above steps, the resist layer 12 was described using a positive type resist, but in the same step, a layer may be formed by using a negative type resist or another organic resin material instead of the positive type resist. Is possible, in this case
Hole processing is performed by means such as dry etching.

【0029】(実施例2)図3は、本発明に基づくプロ
ーブヘッドの製造方法を示す第2の実施例を示す工程図
である。銅箔21の両面にレジスト層22を形成し、露
光,現像によってレジスト層22にLSI電極パッドと
対応した位置に穴加工を施す。次に、該レジスト層22
をマスクとして銅箔21をエッチングして、銅箔21,
レジスト層22を貫く貫通穴23を形成する。このよう
にして、貫通穴23を有する銅箔21とレジスト層22
とから成るフィルム基板24を形成する(図3
(a))。
(Embodiment 2) FIG. 3 is a process drawing showing a second embodiment of the method for manufacturing a probe head according to the present invention. Resist layers 22 are formed on both surfaces of the copper foil 21, and holes are formed in the resist layers 22 at positions corresponding to the LSI electrode pads by exposure and development. Next, the resist layer 22
Is used as a mask to etch the copper foil 21,
A through hole 23 penetrating the resist layer 22 is formed. Thus, the copper foil 21 having the through holes 23 and the resist layer 22
To form a film substrate 24 (FIG. 3).
(A)).

【0030】次に、上記の貫通穴23に導電ゴムを充填
し、硬化して導電ゴム接触子4を形成する(図3
(b))。
Next, the through hole 23 is filled with conductive rubber and cured to form the conductive rubber contact 4 (FIG. 3).
(B)).

【0031】次に、形成された導電ゴム接触子4の上
に、金属膜をメッキ法,電着法,蒸着法,スパッタ法等
の手法を用いて付着させた後、導電ゴム接触子4の上に
形成する(図3(c))。
Next, a metal film is deposited on the formed conductive rubber contact 4 by a method such as a plating method, an electrodeposition method, an evaporation method or a sputtering method, and then the conductive rubber contact 4 is formed. It is formed on the top (FIG. 3C).

【0032】さらに、銅箔21の両面に形成されたレジ
スト層22を剥離除去し、導電ゴム接触子4がフィルム
基板24の少なくとも一面より突出した導電ゴム接触子
4を形成する(図3(d))。
Further, the resist layers 22 formed on both surfaces of the copper foil 21 are peeled and removed to form the conductive rubber contact 4 in which the conductive rubber contact 4 projects from at least one surface of the film substrate 24 (FIG. 3 (d). )).

【0033】次に、予めベース基板2上に接点電極3を
含む回路パターンを薄膜法,アディティブメッキ法にて
形成した回路基板に、前記フィルム基板24の導電ゴム
接触子4と接点電極3とを位置決めするが如く有機系接
着剤5にて圧接接着して回路基板とフィルム基板とを一
体化する(図3(e))。
Next, the conductive rubber contact 4 of the film substrate 24 and the contact electrode 3 are placed on a circuit substrate on which a circuit pattern including the contact electrode 3 is previously formed on the base substrate 2 by a thin film method or an additive plating method. The circuit board and the film board are integrated by pressure contact adhesion with the organic adhesive 5 as if positioning (FIG. 3 (e)).

【0034】しかる後、銅箔11をエッチングすること
によってプローブヘッド1を作製する(図3(f))。
Then, the copper foil 11 is etched to fabricate the probe head 1 (FIG. 3 (f)).

【0035】(実施例3)図4は、本発明に基づくプロ
ーブヘッドの製造方法を示す第3の実施例を示す工程図
である。LSI電極パッドと対応する位置にフォトリソ
グラフィ,エッチング法にて穴加工を施した銅箔31で
レジスト層32の両面を積層し、該銅箔31に形成され
た穴をマスクとしてレジスト層32をエッチングするこ
とにより、銅箔31とレジスト層32とを貫く貫通穴3
3を形成し、貫通穴33を有する銅箔31レジスト層3
2とから成るフィルム基板34を形成する(図4
(a))。
(Embodiment 3) FIG. 4 is a process diagram showing a third embodiment of the method for manufacturing a probe head according to the present invention. Both sides of the resist layer 32 are laminated with a copper foil 31 that has been subjected to hole processing by photolithography and etching at a position corresponding to the LSI electrode pad, and the resist layer 32 is etched using the holes formed in the copper foil 31 as a mask. By doing so, the through hole 3 penetrating the copper foil 31 and the resist layer 32
3 forming a copper foil 31 having a through hole 33 and a resist layer 3
2 to form a film substrate 34 (see FIG. 4).
(A)).

【0036】次に、該貫通穴に導電ゴムを充填し、硬化
することにより導電ゴム接触子4を形成する(図4
(b))。
Next, a conductive rubber contact 4 is formed by filling the through hole with conductive rubber and curing it.
(B)).

【0037】次に、形成された導電ゴム接触子4の上
に、金属膜をメッキ法,電着法,蒸着法,スパッタ法等
の手法を用いて付着させた後、導電ゴム接触子4の上に
形成する(図4(c))。
Next, a metal film is deposited on the formed conductive rubber contact 4 by a method such as a plating method, an electrodeposition method, an evaporation method or a sputtering method, and then the conductive rubber contact 4 is attached. Formed on top (FIG. 4 (c)).

【0038】次に、レジスト層32の両面の銅箔31を
エッチング除去し、導電ゴム接触子4をフィルム基板の
少なくとも一面より突出させる(図4(d))。
Next, the copper foils 31 on both surfaces of the resist layer 32 are removed by etching, and the conductive rubber contacts 4 are projected from at least one surface of the film substrate (FIG. 4 (d)).

【0039】次に、予めベース基板2上に接点電極3を
含む回路パターンを薄膜法,アディティブメッキ法にて
形成した回路基板に、前記フィルムの導電ゴム接触子4
と接点電極3とを位置決めするが如く有機系接着剤5に
て圧接接着して回路基板とフィルム基板とを一体化する
(図4(e))。
Next, the conductive rubber contact 4 of the film is formed on the circuit board in which the circuit pattern including the contact electrodes 3 is formed on the base board 2 in advance by the thin film method and the additive plating method.
The circuit board and the film substrate are integrated with each other by pressing and adhering with the organic adhesive 5 so as to position the contact electrode 3 and the contact electrode 3 (FIG. 4E).

【0040】しかる後、レジスト層32を剥離除去する
ことによってプローブヘッド1を作製する(図4
(f))。
Thereafter, the resist layer 32 is peeled and removed to manufacture the probe head 1 (FIG. 4).
(F)).

【0041】(実施例4)図5は、本発明のプローブヘ
ッドの製造方法の第4の実施例を示す工程図である。
(Embodiment 4) FIG. 5 is a process drawing showing a fourth embodiment of the method for manufacturing a probe head of the present invention.

【0042】銅箔41によってポリイミド,ポリエステ
ル,ガラスクロス入りエポキシの薄板等の有機系レジス
ト層又はフィルム42を被覆し、フォトリソグラフィ,
エッチング等の手法によってLSI電極パッドに対応し
た位置の銅箔41を穴加工する。該穴加工を施した銅箔
41をマスクとしてレジスト層又はフィルム42をウェ
ットエッチングあるいはドライエッチング等の手法で穴
加工し、銅箔41とレジスト層又はフィルム42を貫く
貫通穴43を持つフィルム基板44を形成する(図5
(a))。
An organic resist layer or film 42 such as a thin plate of polyimide, polyester, epoxy containing glass cloth, or the like is covered with a copper foil 41, and photolithography,
A hole is formed in the copper foil 41 at a position corresponding to the LSI electrode pad by a method such as etching. A film substrate 44 having a through hole 43 penetrating the copper foil 41 and the resist layer or film 42 is formed by boring the resist layer or film 42 by a method such as wet etching or dry etching using the hole-processed copper foil 41 as a mask. (Fig. 5)
(A)).

【0043】次に、前記貫通穴43内に、導電ゴムを充
填、硬化することにより、導電ゴム接触子4を形成する
(図5(b))。
Next, conductive rubber is filled in the through hole 43 and cured to form the conductive rubber contact 4 (FIG. 5B).

【0044】次に、形成された導電ゴム接触子4の上
に、金属膜をメッキ法,電着法,蒸着法,スパッタ法等
の手法を用いて付着させた後、導電ゴム接触子4の上に
形成する(図5(c))。
Next, after depositing a metal film on the formed conductive rubber contact 4 by a method such as plating, electrodeposition, vapor deposition, sputtering, etc., the conductive rubber contact 4 is formed. Formed on top (FIG. 5 (c)).

【0045】次に、銅箔41をエッチング除去してレジ
スト層42の両面に突出するが如き導電ゴム接触子4を
有するフィルムを形成する(図5(d))。
Next, the copper foil 41 is removed by etching to form a film having conductive rubber contacts 4 which project on both sides of the resist layer 42 (FIG. 5 (d)).

【0046】次に、予めベース基板2上にLSI電極パ
ッドに対応して設けられた接点電極3を含む回路パター
ンを、薄膜形成法あるいはアディティブメッキ形成法等
によって精度良く形成した回路基板の接点電極3と前記
フィルム基板44の導電ゴム接触子4とを位置決めする
が如く、有機系接着剤45によって圧接接着して、回路
基板とフィルム基板44を一体化することによりプロー
ブヘッド1を作製する(図5(e))。
Next, the contact electrode of the circuit board in which the circuit pattern including the contact electrode 3 provided in advance on the base substrate 2 corresponding to the LSI electrode pad is accurately formed by the thin film forming method or the additive plating forming method. 3 and the conductive rubber contact 4 of the film substrate 44 are positioned by pressure bonding with an organic adhesive 45 so that the circuit board and the film substrate 44 are integrated to produce the probe head 1 (FIG. 5 (e)).

【0047】実施例1〜4においては、導電ゴム接触子
4を導電ゴムで説明してきたが、ニッケル,鉄あるいは
ニッケル,鉄に金メッキした磁性導電粒子あるいは磁性
導電短繊維をシリコーンゴム,ウレタンゴム等のバイン
ダー中に分散して成る導電ゴムを、フィルム基板の穴に
充填し、フィルム基板の厚さ方向に磁場をかけながら硬
化させることにより、一方向に導電性を示す異方導電性
を持った導電ゴム接触子4とすることも可能である。
In the first to fourth embodiments, the conductive rubber contact 4 has been described as a conductive rubber. However, nickel, iron or magnetic conductive particles or magnetic conductive short fibers plated with gold on nickel or iron, silicone rubber, urethane rubber or the like is used. By filling the holes in the film substrate with conductive rubber dispersed in the binder, and curing it while applying a magnetic field in the thickness direction of the film substrate, it has anisotropic conductivity showing unidirectional conductivity. The conductive rubber contact 4 can also be used.

【0048】また、上記実施例1〜4では貫通穴の加工
をエッチングを行うことで説明してきたが、LSI電極
パッドピッチが、250μmを越えるような場合は、ド
リル加工によって、100μm以下,30μm程度まで
は、レーザー加工によってフィルム基板に貫通穴を成形
することも可能である。
Further, in the above-mentioned first to fourth embodiments, the processing of the through holes has been described by etching, but when the LSI electrode pad pitch exceeds 250 μm, it is about 100 μm or less, 30 μm by drilling. Up to this, it is also possible to form the through hole in the film substrate by laser processing.

【0049】[0049]

【発明の効果】以上説明したように、本発明によれば、
フォトリソグラフィーを主に用いているため、微細加工
を容易に施すことが可能で、金属層および有機層の厚み
を適宣に選択することによって導電ゴム接触子の径およ
び高さを幅広く選択することができる。
As described above, according to the present invention,
Since photolithography is mainly used, microfabrication can be easily performed, and the diameter and height of the conductive rubber contact can be widely selected by appropriately selecting the thickness of the metal layer and the organic layer. You can

【0050】また、本発明によれば、微小な金属膜が付
いた導電ゴム接触子形成することが可能であり、高密
度,多端子なプローブヘッドを作製することができる。
Further, according to the present invention, it is possible to form a conductive rubber contactor having a minute metal film, and it is possible to manufacture a probe head having high density and multiple terminals.

【0051】例えば、金属層の厚みを35μm,有機層
の厚みを25μmとした場合、導電ゴム接触子の径とし
て30〜40μm程度、導電ゴム接触子の高さとして6
0μm程度の導電ゴム接触子を形成することができる。
その場合、ピッチは100μmを下回る。
For example, when the thickness of the metal layer is 35 μm and the thickness of the organic layer is 25 μm, the diameter of the conductive rubber contact is about 30 to 40 μm and the height of the conductive rubber contact is 6 μm.
A conductive rubber contact of about 0 μm can be formed.
In that case, the pitch is less than 100 μm.

【0052】さらに、本発明によれば、比較的に大きな
面積に対応した接触子群を形成することができ、1チッ
プレベルのLSI測定に対応することができるのみなら
ず、ウエハーレベルの多チップを同時に測定することの
できるプローブヘッドを形成することもできる。このこ
とは、今後の狭ピッチ、多端子LSIおよび大容量メモ
リLSIにおける超LSIを同時に測定することができ
ることを意味する。
Further, according to the present invention, it is possible to form a contact group corresponding to a relatively large area, and not only to cope with 1-chip level LSI measurement, but also to a wafer-level multi-chip. It is also possible to form a probe head capable of simultaneously measuring This means that it is possible to simultaneously measure VLSIs in future narrow pitch, multi-terminal LSIs and large-capacity memory LSIs.

【0053】さらにまた、本発明によれば、LSI電極
パッドとの接点が金属膜が付いた導電性ゴムから形成さ
れているため、ゴムの弾性により接触圧力が分散され、
LSI電極およびLSI電極近傍のパッシベーション
膜、素子領域に損傷を与えることがなく、LSIを測定
する際の歩留まりを向上させることができる。
Furthermore, according to the present invention, since the contact point with the LSI electrode pad is formed of a conductive rubber having a metal film, the contact pressure is dispersed by the elasticity of the rubber,
The yield at the time of measuring the LSI can be improved without damaging the LSI electrode, the passivation film near the LSI electrode, and the element region.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明を適用したプローブヘッドの構造を示す
断面図である。
FIG. 1 is a sectional view showing a structure of a probe head to which the present invention is applied.

【図2】本発明のプローブヘッドの製造方法の第1の実
施例を示す工程図である。
FIG. 2 is a process drawing showing a first embodiment of the method of manufacturing a probe head of the present invention.

【図3】本発明のプローブヘッドの製造方法の第2の実
施例を示す工程図である。
FIG. 3 is a process drawing showing a second embodiment of the method of manufacturing a probe head of the present invention.

【図4】本発明のプローブヘッドの製造方法の第3の実
施例を示す工程図である。
FIG. 4 is a process drawing showing a third embodiment of the method of manufacturing a probe head of the present invention.

【図5】本発明のプローブヘッドの製造方法の第4の実
施例を示す工程図である。
FIG. 5 is a process drawing showing a fourth embodiment of the method for manufacturing a probe head of the present invention.

【図6】従来のプローブヘッドの構造を示す断面図であ
る。
FIG. 6 is a sectional view showing the structure of a conventional probe head.

【符号の説明】[Explanation of symbols]

1,51 プローブヘッド 2 ベース基板 3 接点電極 4 導電ゴム接触子 5,45 有機系接着剤 6 金属被膜 11,21,31,41 銅箔 12,22,32 レジスト層 13,23,33,43 貫通穴 14,24,34,44 フィルム基板 42 レジスト層又はフィルム 52 プリント回路基板 53 回路パターン 54 開口部 55 プローブ針 56 支持体 1,51 probe head 2 base substrate 3 contact electrode 4 conductive rubber contactor 5,45 organic adhesive 6 metal coating 11,21,31,41 copper foil 12,22,32 resist layer 13,23,33,43 penetrating Hole 14, 24, 34, 44 Film substrate 42 Resist layer or film 52 Printed circuit board 53 Circuit pattern 54 Opening 55 Probe needle 56 Support

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 金属層および該金属層の少なくとも一面
に形成された有機層とを有し、さらに前記金属層と前記
有機層とを貫く貫通孔を有するフィルム基板を形成する
工程と、前記貫通孔内に導電ゴムを充填し、前記導電ゴ
ムを硬化することにより導電ゴム接触子を形成する工程
と、前記導電ゴムの一端に金属膜を形成する工程と、前
記有機層または前記金属層を除去し、前記導電ゴム接触
子が前記有機層または前記金属層の少なくとも一面より
突出するように形成する工程と、LSI電極パッドに対
応して設けられた接点電極を含む回路パターンの接点電
極と前記導電ゴム接触子とを位置合わせして接着剤にて
前記接点電極と前記導電ゴム接触子とを接着する工程
と、前記金属層を除去する工程とを含むことを特徴とす
るプローブヘッドの製造方法。
1. A step of forming a film substrate having a metal layer and an organic layer formed on at least one surface of the metal layer, and further having a through hole penetrating the metal layer and the organic layer; Filling the holes with conductive rubber and forming a conductive rubber contact by curing the conductive rubber; forming a metal film at one end of the conductive rubber; removing the organic layer or the metal layer. A step of forming the conductive rubber contact so as to protrude from at least one surface of the organic layer or the metal layer, and a contact electrode of a circuit pattern including a contact electrode provided corresponding to an LSI electrode pad and the conductive material. A method of manufacturing a probe head, comprising: a step of aligning a rubber contact with each other and adhering the contact electrode and the conductive rubber contact with an adhesive; and a step of removing the metal layer. Build method.
JP08132693A 1993-03-16 1993-03-16 Method of manufacturing probe head Expired - Fee Related JP3345948B2 (en)

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Application Number Priority Date Filing Date Title
JP08132693A JP3345948B2 (en) 1993-03-16 1993-03-16 Method of manufacturing probe head

Publications (2)

Publication Number Publication Date
JPH06265575A true JPH06265575A (en) 1994-09-22
JP3345948B2 JP3345948B2 (en) 2002-11-18

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ID=13743271

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Country Link
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246247B1 (en) 1994-11-15 2001-06-12 Formfactor, Inc. Probe card assembly and kit, and methods of using same
KR100355972B1 (en) * 1994-11-15 2002-10-12 폼팩터, 인크. Method of making tip structures
US6475822B2 (en) 1993-11-16 2002-11-05 Formfactor, Inc. Method of making microelectronic contact structures
US6483328B1 (en) 1995-11-09 2002-11-19 Formfactor, Inc. Probe card for probing wafers with raised contact elements
US6640415B2 (en) 1999-06-07 2003-11-04 Formfactor, Inc. Segmented contactor
US6690185B1 (en) 1997-01-15 2004-02-10 Formfactor, Inc. Large contactor with multiple, aligned contactor units
US6741085B1 (en) 1993-11-16 2004-05-25 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US6838893B2 (en) 1993-11-16 2005-01-04 Formfactor, Inc. Probe card assembly
US7005751B2 (en) 2003-04-10 2006-02-28 Formfactor, Inc. Layered microelectronic contact and method for fabricating same
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US7131848B2 (en) 2003-04-10 2006-11-07 Formfactor, Inc. Helical microelectronic contact and method for fabricating same
JP2007534947A (en) * 2004-04-26 2007-11-29 フォームファクター, インコーポレイテッド How to create a robust mechanical structure on a substrate surface

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838893B2 (en) 1993-11-16 2005-01-04 Formfactor, Inc. Probe card assembly
US7140883B2 (en) 1993-11-16 2006-11-28 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US7352196B2 (en) 1993-11-16 2008-04-01 Formfactor, Inc. Probe card assembly and kit
US7061257B2 (en) 1993-11-16 2006-06-13 Formfactor, Inc. Probe card assembly
US6482013B2 (en) 1993-11-16 2002-11-19 Formfactor, Inc. Microelectronic spring contact element and electronic component having a plurality of spring contact elements
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US7616016B2 (en) 1993-11-16 2009-11-10 Formfactor, Inc. Probe card assembly and kit
US6741085B1 (en) 1993-11-16 2004-05-25 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US6475822B2 (en) 1993-11-16 2002-11-05 Formfactor, Inc. Method of making microelectronic contact structures
KR100355972B1 (en) * 1994-11-15 2002-10-12 폼팩터, 인크. Method of making tip structures
US6246247B1 (en) 1994-11-15 2001-06-12 Formfactor, Inc. Probe card assembly and kit, and methods of using same
US6483328B1 (en) 1995-11-09 2002-11-19 Formfactor, Inc. Probe card for probing wafers with raised contact elements
US6690185B1 (en) 1997-01-15 2004-02-10 Formfactor, Inc. Large contactor with multiple, aligned contactor units
US6640415B2 (en) 1999-06-07 2003-11-04 Formfactor, Inc. Segmented contactor
US7215131B1 (en) 1999-06-07 2007-05-08 Formfactor, Inc. Segmented contactor
US7578057B2 (en) 1999-06-07 2009-08-25 Formfactor, Inc. Method of fabricating segmented contactor
US7131848B2 (en) 2003-04-10 2006-11-07 Formfactor, Inc. Helical microelectronic contact and method for fabricating same
US7005751B2 (en) 2003-04-10 2006-02-28 Formfactor, Inc. Layered microelectronic contact and method for fabricating same
JP2007534947A (en) * 2004-04-26 2007-11-29 フォームファクター, インコーポレイテッド How to create a robust mechanical structure on a substrate surface

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