JP2002050634A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法Info
- Publication number
- JP2002050634A JP2002050634A JP2001125785A JP2001125785A JP2002050634A JP 2002050634 A JP2002050634 A JP 2002050634A JP 2001125785 A JP2001125785 A JP 2001125785A JP 2001125785 A JP2001125785 A JP 2001125785A JP 2002050634 A JP2002050634 A JP 2002050634A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- tft
- semiconductor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 72
- 238000000034 method Methods 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000012535 impurity Substances 0.000 claims abstract description 73
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- 239000000356 contaminant Substances 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 15
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000003929 acidic solution Substances 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 238000011109 contamination Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 198
- 239000010410 layer Substances 0.000 description 93
- 239000000758 substrate Substances 0.000 description 59
- 238000005530 etching Methods 0.000 description 42
- 230000008569 process Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 239000011159 matrix material Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000002585 base Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000000565 sealant Substances 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000001994 activation Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 241000283986 Lepus Species 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 102100032244 Dynein axonemal heavy chain 1 Human genes 0.000 description 1
- 101001016198 Homo sapiens Dynein axonemal heavy chain 1 Proteins 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- -1 polyparaphenylene vinylene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001125785A JP2002050634A (ja) | 2000-04-28 | 2001-04-24 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000131353 | 2000-04-28 | ||
| JP2000-131353 | 2000-04-28 | ||
| JP2001125785A JP2002050634A (ja) | 2000-04-28 | 2001-04-24 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002050634A true JP2002050634A (ja) | 2002-02-15 |
| JP2002050634A5 JP2002050634A5 (enExample) | 2008-05-08 |
Family
ID=26591284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001125785A Withdrawn JP2002050634A (ja) | 2000-04-28 | 2001-04-24 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002050634A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004056099A (ja) * | 2002-05-17 | 2004-02-19 | Semiconductor Energy Lab Co Ltd | 窒化珪素膜、並びに半導体装置及びその作製方法 |
| US7893439B2 (en) | 2002-05-17 | 2011-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Silicon nitride film and semiconductor device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6249627A (ja) * | 1985-08-28 | 1987-03-04 | Nec Corp | 半導体装置の製造方法 |
| JPH08339960A (ja) * | 1994-07-01 | 1996-12-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JPH09270412A (ja) | 1996-04-01 | 1997-10-14 | Canon Inc | 洗浄装置及び洗浄方法 |
| JPH09321009A (ja) * | 1996-05-29 | 1997-12-12 | Toshiba Corp | 半導体装置の製造方法 |
| JPH1064861A (ja) * | 1996-08-22 | 1998-03-06 | Sony Corp | ウエハの洗浄方法および装置 |
| JPH1140645A (ja) * | 1997-07-22 | 1999-02-12 | Kaijo Corp | 超音波式浮揚搬送機構を備えたクラスターツール型枚葉処理装置 |
| JPH11168215A (ja) | 1997-12-03 | 1999-06-22 | Seiko Epson Corp | アクティブマトリクス基板およびその製造方法、並びに液晶表示装置 |
| WO2000007220A2 (en) | 1998-07-29 | 2000-02-10 | Cfmt, Inc. | Wet processing methods for the manufacture of electronic components using ozonated process fluids |
-
2001
- 2001-04-24 JP JP2001125785A patent/JP2002050634A/ja not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6249627A (ja) * | 1985-08-28 | 1987-03-04 | Nec Corp | 半導体装置の製造方法 |
| JPH08339960A (ja) * | 1994-07-01 | 1996-12-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JPH09270412A (ja) | 1996-04-01 | 1997-10-14 | Canon Inc | 洗浄装置及び洗浄方法 |
| JPH09321009A (ja) * | 1996-05-29 | 1997-12-12 | Toshiba Corp | 半導体装置の製造方法 |
| JPH1064861A (ja) * | 1996-08-22 | 1998-03-06 | Sony Corp | ウエハの洗浄方法および装置 |
| JPH1140645A (ja) * | 1997-07-22 | 1999-02-12 | Kaijo Corp | 超音波式浮揚搬送機構を備えたクラスターツール型枚葉処理装置 |
| JPH11168215A (ja) | 1997-12-03 | 1999-06-22 | Seiko Epson Corp | アクティブマトリクス基板およびその製造方法、並びに液晶表示装置 |
| WO2000007220A2 (en) | 1998-07-29 | 2000-02-10 | Cfmt, Inc. | Wet processing methods for the manufacture of electronic components using ozonated process fluids |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004056099A (ja) * | 2002-05-17 | 2004-02-19 | Semiconductor Energy Lab Co Ltd | 窒化珪素膜、並びに半導体装置及びその作製方法 |
| US7893439B2 (en) | 2002-05-17 | 2011-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Silicon nitride film and semiconductor device |
| KR101028346B1 (ko) * | 2002-05-17 | 2011-04-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 질화 규소막 및 반도체 장치 |
| KR101054240B1 (ko) * | 2002-05-17 | 2011-08-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8866144B2 (en) | 2002-05-17 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film semiconductor device having silicon nitride film |
| US9847355B2 (en) | 2002-05-17 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Silicon nitride film, and semiconductor device |
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