JP2002033403A - スタティック型半導体記憶装置 - Google Patents

スタティック型半導体記憶装置

Info

Publication number
JP2002033403A
JP2002033403A JP2000217076A JP2000217076A JP2002033403A JP 2002033403 A JP2002033403 A JP 2002033403A JP 2000217076 A JP2000217076 A JP 2000217076A JP 2000217076 A JP2000217076 A JP 2000217076A JP 2002033403 A JP2002033403 A JP 2002033403A
Authority
JP
Japan
Prior art keywords
region
storage node
semiconductor
conductivity type
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000217076A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002033403A5 (enExample
Inventor
Shigeki Komori
重樹 小森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2000217076A priority Critical patent/JP2002033403A/ja
Priority to US09/765,637 priority patent/US6507079B2/en
Publication of JP2002033403A publication Critical patent/JP2002033403A/ja
Priority to US10/330,168 priority patent/US6747323B2/en
Publication of JP2002033403A5 publication Critical patent/JP2002033403A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000217076A 2000-07-18 2000-07-18 スタティック型半導体記憶装置 Pending JP2002033403A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000217076A JP2002033403A (ja) 2000-07-18 2000-07-18 スタティック型半導体記憶装置
US09/765,637 US6507079B2 (en) 2000-07-18 2001-01-22 Static semiconductor memory device
US10/330,168 US6747323B2 (en) 2000-07-18 2002-12-30 Static semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000217076A JP2002033403A (ja) 2000-07-18 2000-07-18 スタティック型半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2002033403A true JP2002033403A (ja) 2002-01-31
JP2002033403A5 JP2002033403A5 (enExample) 2009-01-08

Family

ID=18712238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000217076A Pending JP2002033403A (ja) 2000-07-18 2000-07-18 スタティック型半導体記憶装置

Country Status (2)

Country Link
US (2) US6507079B2 (enExample)
JP (1) JP2002033403A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033403A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp スタティック型半導体記憶装置
US7053459B2 (en) * 2001-03-12 2006-05-30 Renesas Technology Corp. Semiconductor integrated circuit device and process for producing the same
JP3467699B2 (ja) * 2001-03-26 2003-11-17 セイコーエプソン株式会社 半導体装置、メモリシステムおよび電子機器
JP4120483B2 (ja) * 2003-06-11 2008-07-16 セイコーエプソン株式会社 半導体記憶装置
US7250657B2 (en) * 2005-03-11 2007-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. Layout structure for memory arrays with SOI devices
US7816740B2 (en) * 2008-01-04 2010-10-19 Texas Instruments Incorporated Memory cell layout structure with outer bitline
US8587068B2 (en) * 2012-01-26 2013-11-19 International Business Machines Corporation SRAM with hybrid FinFET and planar transistors

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189253A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd スタテイツク型半導体記憶装置
JPS6197961A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd 半導体集積回路装置の製造方法
JPH0513705A (ja) * 1991-07-09 1993-01-22 Fujitsu Ltd 半導体装置
JPH05299610A (ja) * 1992-04-24 1993-11-12 Hitachi Ltd 半導体集積回路装置及びその形成方法
JPH06275796A (ja) * 1993-03-18 1994-09-30 Hitachi Ltd 半導体集積回路装置
JPH07321234A (ja) * 1994-05-27 1995-12-08 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH08139206A (ja) * 1994-11-11 1996-05-31 Nec Corp 半導体装置およびその製造方法
JPH08255839A (ja) * 1995-03-16 1996-10-01 Fujitsu Ltd 相補型半導体集積回路装置
JP2000277629A (ja) * 1999-03-23 2000-10-06 Nec Corp 半導体記憶装置及びその製造方法
JP2001057393A (ja) * 1999-06-09 2001-02-27 Seiko Epson Corp 半導体記憶装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61139059A (ja) 1984-12-12 1986-06-26 Hitachi Ltd 半導体集積回路装置
US4774203A (en) * 1985-10-25 1988-09-27 Hitachi, Ltd. Method for making static random-access memory device
JPH02295164A (ja) 1989-05-10 1990-12-06 Sony Corp 半導体メモリ
JP2660056B2 (ja) * 1989-09-12 1997-10-08 三菱電機株式会社 相補型ｍｏｓ半導体装置
US6130470A (en) * 1997-03-24 2000-10-10 Advanced Micro Devices, Inc. Static random access memory cell having buried sidewall capacitors between storage nodes
US6144076A (en) * 1998-12-08 2000-11-07 Lsi Logic Corporation Well formation For CMOS devices integrated circuit structures
JP2002033403A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp スタティック型半導体記憶装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189253A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd スタテイツク型半導体記憶装置
JPS6197961A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd 半導体集積回路装置の製造方法
JPH0513705A (ja) * 1991-07-09 1993-01-22 Fujitsu Ltd 半導体装置
JPH05299610A (ja) * 1992-04-24 1993-11-12 Hitachi Ltd 半導体集積回路装置及びその形成方法
JPH06275796A (ja) * 1993-03-18 1994-09-30 Hitachi Ltd 半導体集積回路装置
JPH07321234A (ja) * 1994-05-27 1995-12-08 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH08139206A (ja) * 1994-11-11 1996-05-31 Nec Corp 半導体装置およびその製造方法
JPH08255839A (ja) * 1995-03-16 1996-10-01 Fujitsu Ltd 相補型半導体集積回路装置
JP2000277629A (ja) * 1999-03-23 2000-10-06 Nec Corp 半導体記憶装置及びその製造方法
JP2001057393A (ja) * 1999-06-09 2001-02-27 Seiko Epson Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
US6507079B2 (en) 2003-01-14
US20020011632A1 (en) 2002-01-31
US20030132490A1 (en) 2003-07-17
US6747323B2 (en) 2004-06-08

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