JP2002025494A5 - - Google Patents

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Publication number
JP2002025494A5
JP2002025494A5 JP2000203779A JP2000203779A JP2002025494A5 JP 2002025494 A5 JP2002025494 A5 JP 2002025494A5 JP 2000203779 A JP2000203779 A JP 2000203779A JP 2000203779 A JP2000203779 A JP 2000203779A JP 2002025494 A5 JP2002025494 A5 JP 2002025494A5
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JP
Japan
Prior art keywords
charged particle
particle beam
measurement mechanism
temperature measurement
contact
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Application number
JP2000203779A
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English (en)
Japanese (ja)
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JP3969935B2 (ja
JP2002025494A (ja
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Priority to JP2000203779A priority Critical patent/JP3969935B2/ja
Priority claimed from JP2000203779A external-priority patent/JP3969935B2/ja
Publication of JP2002025494A publication Critical patent/JP2002025494A/ja
Publication of JP2002025494A5 publication Critical patent/JP2002025494A5/ja
Application granted granted Critical
Publication of JP3969935B2 publication Critical patent/JP3969935B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000203779A 2000-07-05 2000-07-05 温度計測機能を有する荷電粒子ビーム装置 Expired - Fee Related JP3969935B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000203779A JP3969935B2 (ja) 2000-07-05 2000-07-05 温度計測機能を有する荷電粒子ビーム装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000203779A JP3969935B2 (ja) 2000-07-05 2000-07-05 温度計測機能を有する荷電粒子ビーム装置

Publications (3)

Publication Number Publication Date
JP2002025494A JP2002025494A (ja) 2002-01-25
JP2002025494A5 true JP2002025494A5 (enExample) 2005-03-17
JP3969935B2 JP3969935B2 (ja) 2007-09-05

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ID=18701147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000203779A Expired - Fee Related JP3969935B2 (ja) 2000-07-05 2000-07-05 温度計測機能を有する荷電粒子ビーム装置

Country Status (1)

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JP (1) JP3969935B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5304011B2 (ja) * 2008-04-24 2013-10-02 新日鐵住金株式会社 局所領域温度計測装置を備えた集束イオンビーム装置及び局所領域の温度計測方法
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation

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