JP2002025494A5 - - Google Patents

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JP2002025494A5
JP2002025494A5 JP2000203779A JP2000203779A JP2002025494A5 JP 2002025494 A5 JP2002025494 A5 JP 2002025494A5 JP 2000203779 A JP2000203779 A JP 2000203779A JP 2000203779 A JP2000203779 A JP 2000203779A JP 2002025494 A5 JP2002025494 A5 JP 2002025494A5
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Japan
Prior art keywords
charged particle
particle beam
measurement mechanism
temperature measurement
contact
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JP2000203779A
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JP2002025494A (en
JP3969935B2 (en
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Publication of JP2002025494A5 publication Critical patent/JP2002025494A5/ja
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【０００９】
（２） 前記荷電粒子ビームとしてＧａイオンビームを照射し対象試料を加工する荷電粒子ビーム装置であって、前記接触型温度計測機構が加工中の前記対象物の温度を計測するものであることを特徴とする前記（１）に記載の荷電粒子ビーム装置。
（３） 前記接触型温度計測機構が、小型熱電対からなることを特徴とする前記（１）または（２）に記載の荷電粒子ビーム装置。[0009]
(2) the A charged particle beam apparatus for processing a sample of interest is irradiated with Ga ion beam as a charged particle beam, said contact temperature measurement mechanism and measures the temperature of the object during processing The charged particle beam apparatus according to (1), characterized in that
(3) The charged particle beam device according to (1) or (2), wherein the contact-type temperature measurement mechanism comprises a small-sized thermocouple.

Claims (4)

集束した荷電粒子ビームを照射するための荷電粒子ビーム光学系と、上記荷電粒子ビームの照射対象から発生する二次荷電粒子を検出するための検出器と、該検出器で得られた二次荷電粒子に基づいて荷電粒子像を形成する画像表示装置とを備えた荷電粒子ビーム装置において、
前記荷電粒子ビーム装置内を移動可能な接触型温度計測機構を備えたことを特徴とする荷電粒子ビーム装置。A charged particle beam optical system for irradiating a focused charged particle beam, a detector for detecting secondary charged particles generated from an irradiation target of the charged particle beam, and a secondary charge obtained by the detector And an image display device for forming a charged particle image based on particles.
A charged particle beam apparatus comprising a contact-type temperature measurement mechanism movable in the charged particle beam apparatus. 前記荷電粒子ビームとしてＧａイオンビームを照射し対象試料を加工する荷電粒子ビーム装置であって、前記接触型温度計測機構が加工中の前記対象試料の温度を計測するものであることを特徴とする請求項１に記載の荷電粒子ビーム装置。A charged particle beam apparatus for processing a sample of interest is irradiated with Ga ion beam as said charged particle beam, wherein the contact temperature measurement mechanism and measures the temperature of the target sample during processing The charged particle beam device according to claim 1. 前記接触型温度計測機構が、小型熱電対からなることを特徴とする請求項１または２に記載の荷電粒子ビーム装置。The charged particle beam device according to claim 1 or 2, wherein the contact-type temperature measurement mechanism comprises a small-sized thermocouple. 前記小型熱電対の先端部を、ビームアシストデポジションによって試料と固定させるためのガス源を備えることを特徴とする請求項３に記載の荷電粒子ビーム装置。The charged particle beam apparatus according to claim 3, further comprising a gas source for fixing the tip of the small-sized thermocouple to the sample by beam assisted deposition.
JP2000203779A 2000-07-05 2000-07-05 Charged particle beam device with temperature measurement function Expired - Fee Related JP3969935B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000203779A JP3969935B2 (en) 2000-07-05 2000-07-05 Charged particle beam device with temperature measurement function

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Application Number Priority Date Filing Date Title
JP2000203779A JP3969935B2 (en) 2000-07-05 2000-07-05 Charged particle beam device with temperature measurement function

Publications (3)

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JP2002025494A JP2002025494A (en) 2002-01-25
JP2002025494A5 true JP2002025494A5 (en) 2005-03-17
JP3969935B2 JP3969935B2 (en) 2007-09-05

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JP2000203779A Expired - Fee Related JP3969935B2 (en) 2000-07-05 2000-07-05 Charged particle beam device with temperature measurement function

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5304011B2 (en) * 2008-04-24 2013-10-02 新日鐵住金株式会社 Focused ion beam device with local region temperature measuring device and local region temperature measuring method
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation

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