JPH043385Y2 - - Google Patents

Info

Publication number
JPH043385Y2
JPH043385Y2 JP15210081U JP15210081U JPH043385Y2 JP H043385 Y2 JPH043385 Y2 JP H043385Y2 JP 15210081 U JP15210081 U JP 15210081U JP 15210081 U JP15210081 U JP 15210081U JP H043385 Y2 JPH043385 Y2 JP H043385Y2
Authority
JP
Japan
Prior art keywords
sample
ions
slit
analyzer
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15210081U
Other languages
Japanese (ja)
Other versions
JPS5857065U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15210081U priority Critical patent/JPS5857065U/en
Publication of JPS5857065U publication Critical patent/JPS5857065U/en
Application granted granted Critical
Publication of JPH043385Y2 publication Critical patent/JPH043385Y2/ja
Granted legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は表面分析装置に関し、特に同軸円筒型
エネルギ分析器(Cylindrical Mirror
Analyzer:以下CMAと称す。)を使用した表面
分析装置に関する。
[Detailed description of the invention] The present invention relates to a surface analysis device, particularly a coaxial cylindrical energy analyzer (Cylindrical Mirror
Analyzer: Hereinafter referred to as CMA. ).

CMAの軸上に配置されたイオン源からの一次
荷電粒子を試料に照射し、該試料との弾性衝突に
より散乱したイオンのエネルギを該CMAによつ
て分析すれば、該試料表面の組成を調べることが
できる。しかしながらこのような分析方法におい
ては一次元方向の原子配列の情報しか得られず、
従つて該試料表面の2次元又は立体的構造につい
ての情報を得ることはできない。
By irradiating a sample with primary charged particles from an ion source placed on the axis of the CMA, and analyzing the energy of the ions scattered by elastic collisions with the sample using the CMA, the composition of the sample surface can be determined. be able to. However, this type of analysis method only provides information on the atomic arrangement in one dimension;
Therefore, information about the two-dimensional or three-dimensional structure of the sample surface cannot be obtained.

本考案は同軸円筒型エネルギ分析器の軸上に一
次荷電粒子線発生手段を配置し、該発生手段から
の荷電粒子線を試料に照射することによつて該試
料から散乱する荷電粒子を該分析器によつてエネ
ルギ分析するように構成した表面分析装置におい
て、該分析器の出射スリツトを通過する同一エネ
ルギの荷電粒子を該スリツトからの出射方向に応
じて検出するための複数の検出器を備えるように
構成し、該試料表面の立体的な構成についての情
報を得ることができる表面分析装置を提供する。
In the present invention, a primary charged particle beam generation means is arranged on the axis of a coaxial cylindrical energy analyzer, and the charged particles scattered from the sample are analyzed by irradiating the sample with the charged particle beam from the generation means. A surface analysis device configured to perform energy analysis using a device, comprising a plurality of detectors for detecting charged particles of the same energy passing through an exit slit of the analyzer according to the direction of exit from the slit. The present invention provides a surface analysis device configured as shown in FIG.

以下本考案の一実施例を添付図面に基づき詳述
する。
An embodiment of the present invention will be described below in detail with reference to the accompanying drawings.

図中1はCMAであり、該CMA1の軸上にはイ
オン銃2、収束レンズ3、イオン走査手段4が配
置されている。該イオン銃2から発生したイオン
は収束レンズ3によつてCMA1の軸上に配置さ
れた試料5上に細く収束され、更にイオン走査手
段によつて偏向される。該試料5へのイオンの照
射に伴い該試料5から散乱されたイオンはCMA
1によつてエネルギ分析され、特定エネルギのイ
オンがCMA1の出射側の軸上に配置されたスリ
ツト6を通過する。該スリツト6を通過したイオ
ンはリング状に配置された複数のイオン検出器7
a,7b,……7n……(7a,7nのみ図示)
によつて検出される。
In the figure, 1 is a CMA, and an ion gun 2, a converging lens 3, and an ion scanning means 4 are arranged on the axis of the CMA 1. Ions generated from the ion gun 2 are narrowly focused by a converging lens 3 onto a sample 5 placed on the axis of the CMA 1, and are further deflected by an ion scanning means. When the sample 5 is irradiated with ions, the ions scattered from the sample 5 are CMA
1, and ions with a specific energy pass through a slit 6 arranged on the axis on the exit side of the CMA 1. The ions passing through the slit 6 are detected by a plurality of ion detectors 7 arranged in a ring shape.
a, 7b, ...7n... (only 7a and 7n are shown)
detected by.

上述した如き構成において、イオン銃2からの
イオンを試料5の微小領域に照射すると、散乱イ
オンが該領域から得られる。該散乱イオンのエネ
ルギは該試料の微小領域の元素によつて相異し、
又イオンの散乱の方向から試料表面の立体的構造
が決定される。その結果本考案においては特定の
散乱角のイオンをCMA1内に導き、分析された
特定エネルギのイオンのみをスリツト6を介して
取り出すと共に、該スリツト6を通過したイオン
をリング状に配置された多数のイオン検出器7
a,……7n……によつて検出するようにしてい
るため、該検出器からの多数の信号により、試料
5表面部分の組成に関する情報のみならず、イオ
ンの散乱方向に関する情報、すなわち試料表面の
2次元および立体構造に関する情報を得ることが
できる。従つてCMA1に印加する電圧を掃引し、
スリツト6を通過する次々と異つたエネルギのイ
オンを多数の検出器7a……7n……によつて検
出し、得られた多数の検出信号を処理すれば、試
料表面の多様な分析を行い得る。更に試料上の一
次イオンの照射点を走査手段4によつて変化させ
れば、試料の幅広い範囲に亙つて表面分析を行い
得る。
In the configuration as described above, when a minute region of the sample 5 is irradiated with ions from the ion gun 2, scattered ions are obtained from the region. The energy of the scattered ions differs depending on the element in the micro region of the sample,
Furthermore, the three-dimensional structure of the sample surface is determined from the direction of ion scattering. As a result, in the present invention, ions with a specific scattering angle are guided into the CMA 1, and only analyzed ions with a specific energy are taken out through the slit 6. ion detector 7
a,...7n..., the large number of signals from these detectors provides information not only about the composition of the surface portion of the sample 5, but also information about the scattering direction of the ions, that is, the sample surface. Information regarding the two-dimensional and three-dimensional structures of can be obtained. Therefore, sweep the voltage applied to CMA1,
By sequentially detecting ions with different energies passing through the slit 6 by a large number of detectors 7a...7n...and processing a large number of obtained detection signals, various analyzes of the sample surface can be performed. . Furthermore, by changing the irradiation point of the primary ions on the sample using the scanning means 4, surface analysis can be performed over a wide range of the sample.

【図面の簡単な説明】[Brief explanation of the drawing]

添付図面は本考案の一実施例を示すブロツク図
である。 1……CMA、2……イオン銃、3……収束レ
ンズ、4……イオン走査手段、5……試料、6…
…スリツト、7……イオン検出器。
The accompanying drawing is a block diagram showing one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...CMA, 2...Ion gun, 3...Converging lens, 4...Ion scanning means, 5...Sample, 6...
...Slit, 7...Ion detector.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 同軸円筒型エネルギ分析器の軸上に一次荷電粒
子線発生手段を配置し、該発生手段からの荷電粒
子線を試料に照射し、該試料との弾性衝突に基づ
き発生する荷電粒子を該分析器によつてエネルギ
分析するように構成した表面分析装置において、
該分析器の出射スリツトを通過する同一エネルギ
の荷電粒子を該スリツトからの出射方向に応じて
検出するための複数の検出器を備えた表面分析装
置。
A primary charged particle beam generation means is arranged on the axis of a coaxial cylindrical energy analyzer, and the sample is irradiated with the charged particle beam from the generation means, and the charged particles generated due to elastic collision with the sample are transferred to the analyzer. In a surface analysis device configured to perform energy analysis by
A surface analysis device comprising a plurality of detectors for detecting charged particles of the same energy passing through an exit slit of the analyzer according to the exit direction from the slit.
JP15210081U 1981-10-13 1981-10-13 surface analysis device Granted JPS5857065U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15210081U JPS5857065U (en) 1981-10-13 1981-10-13 surface analysis device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15210081U JPS5857065U (en) 1981-10-13 1981-10-13 surface analysis device

Publications (2)

Publication Number Publication Date
JPS5857065U JPS5857065U (en) 1983-04-18
JPH043385Y2 true JPH043385Y2 (en) 1992-02-03

Family

ID=29944766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15210081U Granted JPS5857065U (en) 1981-10-13 1981-10-13 surface analysis device

Country Status (1)

Country Link
JP (1) JPS5857065U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2730578B2 (en) * 1988-06-16 1998-03-25 洋太郎 畑村 Micromanipulator

Also Published As

Publication number Publication date
JPS5857065U (en) 1983-04-18

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