JP2002025494A - Charged particle beam system having thermometric function - Google Patents
Charged particle beam system having thermometric functionInfo
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- JP2002025494A JP2002025494A JP2000203779A JP2000203779A JP2002025494A JP 2002025494 A JP2002025494 A JP 2002025494A JP 2000203779 A JP2000203779 A JP 2000203779A JP 2000203779 A JP2000203779 A JP 2000203779A JP 2002025494 A JP2002025494 A JP 2002025494A
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- charged particle
- particle beam
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、荷電粒子ビーム装
置に関し、さらに詳しくは、試料を加工もしくは観察す
る際に、試料の温度変化を計測できる荷電粒子ビーム装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam apparatus, and more particularly, to a charged particle beam apparatus capable of measuring a temperature change of a sample when processing or observing the sample.
【０００２】[0002]
【従来の技術】荷電粒子ビームを試料に照射した時に発
生する二次荷電粒子を検出することにより、微細な組織
観察を行う技術は良く知られている。特に最近では、荷
電粒子ビームとしてＧａイオンを利用し、その際に発生
する二次荷電粒子としては電子を検出することにより、
表面粗度や組成変化、結晶方位変化などを観察する技術
が報告されている。また、この方法は、Ｇａイオンによ
るスパッタリング効果を利用して、電子顕微鏡用の薄片
試料を作製する方法（集束イオンビーム加工法）として
もよく知られる所であり、その典型的な方法は特開平５
−１８０７３９号に開示されている。2. Description of the Related Art A technique for observing fine structures by detecting secondary charged particles generated when a sample is irradiated with a charged particle beam is well known. Particularly recently, by utilizing Ga ions as a charged particle beam and detecting electrons as secondary charged particles generated at that time,
Techniques for observing changes in surface roughness, composition, and crystal orientation have been reported. This method is also well known as a method of producing a thin section sample for an electron microscope using the sputtering effect of Ga ions (focused ion beam processing method). 5
No. 1,807,739.
【０００３】この集束イオンビーム加工をするための装
置は、基本的には、集束した荷電粒子ビームを照射する
ための荷電粒子ビーム光学系と、上記荷電粒子ビームの
照射対象から発生する二次荷電粒子を検出するための検
出器と、該検出器で得られた二次荷電粒子に基づいて荷
電粒子像を形成する画像表示装置を備えた荷電粒子ビー
ム装置である。そしてその集束イオンビームで目的とす
る試料を電子顕微鏡観察できる厚みまで薄片化する際の
基本原理は、スパッタリング現象を利用している。An apparatus for performing this focused ion beam processing basically includes a charged particle beam optical system for irradiating a focused charged particle beam, and a secondary charged beam generated from an object to be irradiated with the charged particle beam. The charged particle beam device includes a detector for detecting particles, and an image display device that forms a charged particle image based on the secondary charged particles obtained by the detector. The basic principle of thinning a target sample to a thickness that can be observed with an electron microscope using the focused ion beam utilizes a sputtering phenomenon.
【０００４】この集束イオンビーム加工法の発明によ
り、電子顕微鏡試料作製技術は飛躍的に向上した。さら
に特開平１１−１０８８１３号公報に開示されているよ
うに、この加工法の課題の一つであった電子顕微鏡元素
分析時の不要（ゴースト）Ｘ線の発生を極力抑制するた
めの技術がある。この不要Ｘ線は、反射電子や試料を通
過して広角度に散乱した電子が周辺の厚膜部の側壁に当
たって発生するものであり、この周辺部の壁部分を予め
取り除いた新たな微細な試料加工方法である。According to the invention of the focused ion beam processing method, the technique of preparing an electron microscope sample has been dramatically improved. Further, as disclosed in JP-A-11-10813, there is a technique for minimizing the generation of unnecessary (ghost) X-rays during elemental analysis with an electron microscope, which is one of the problems of this processing method. . The unnecessary X-rays are generated when reflected electrons and electrons scattered at a wide angle after passing through the sample hit the side wall of the peripheral thick film portion, and a new fine sample in which the peripheral wall portion has been removed in advance. It is a processing method.
【０００５】この加工方法は、基本的には荷電粒子ビー
ム加工装置の中で、観察対象となるような微細試料を切
り出したり、移動させたりすることを可能とした特開平
１１−１３５０５１号公報に開示された技術と関連す
る。このような技術の進歩により、荷電粒子ビーム装置
内での電子顕微鏡観察用試料の作製技術は大きく進歩
し、様々な材料対象に対して適用されるようになってき
た。[0005] This processing method is basically disclosed in Japanese Patent Application Laid-Open No. H11-135051, which makes it possible to cut out and move a fine sample to be observed in a charged particle beam processing apparatus. Related to the disclosed technology. With the advance of such a technique, the technique of manufacturing a sample for electron microscopic observation in a charged particle beam apparatus has greatly advanced, and has been applied to various material objects.
【０００６】[0006]
【発明が解決しようとする課題】半導体材料のみなら
ず、種々の金属材料や樹脂材料、さらには無機コロイド
材料などに対しても、集束イオンビーム加工法による電
子顕微鏡試料作製技術が行われるようになってきた結
果、イオンビーム加工時の局所的な温度上昇のために、
対象とする試料組織が変化したり、材質が変化するとい
う問題に直面するようになってきた。これはそもそもス
パッタリング現象というのは、試料を構成する元素を荷
電粒子ビームではじきとばす原理を使っているので、長
時間の加工や、短時間でも強いビームを利用しての加工
の際に、局所的な温度上昇が十分予測されるためであ
る。The technique of preparing an electron microscope sample by a focused ion beam processing method for not only semiconductor materials but also various metal materials, resin materials, and inorganic colloid materials, etc. has been developed. As a result, due to local temperature rise during ion beam processing,
It has come to face the problem that the target sample structure changes or the material changes. In the first place, the sputtering phenomenon uses the principle of repelling the elements that make up the sample with a charged particle beam, so when processing for a long time or using a strong beam even for a short time, the local phenomenon occurs. This is because a typical temperature rise is sufficiently predicted.
【０００７】これを根本的に解決することは不可能だと
思われるが、局所的な温度上昇量を知ることができれ
ば、事前に試料の熱伝導性を向上させ放熱性を改良した
り、或いは集束イオンビーム加工中に照射ビームを弱く
したり、また照射時間を短くしたりすることにより、材
質変化が起きるほどの温度上昇を阻止することができ
る。しかしながら、荷電粒子ビーム装置内での試料加工
部位のサイズはミクロンオーダーであり、かつ様々な部
位を複雑に加工するために、従来の電子顕微鏡加熱ステ
ージなどで採用されている予め試料ステージの一部に熱
電対を取り付けておくというような発想では、問題とす
る局所的な温度計測をすることは不可能であった。It seems impossible to fundamentally solve this, but if the amount of local temperature rise can be known, the heat conductivity of the sample can be improved in advance to improve the heat dissipation, or By weakening the irradiation beam or shortening the irradiation time during the focused ion beam processing, it is possible to prevent the temperature from rising so much that the material changes. However, the size of the sample processing part in the charged particle beam apparatus is on the order of microns, and in order to process various parts in a complicated manner, a part of the sample stage previously used in the conventional electron microscope heating stage etc. With the idea of attaching a thermocouple to the wall, it was impossible to measure the local temperature in question.
【０００８】[0008]
【課題を解決するための手段】発明者らは、上記の目的
を達成するために、試料を観察、及び加工する直前に、
接触型の超小型温度計測部を試料に接触させる装置を検
討し本発明を完成させたもので、その要旨とするところ
は以下の通りである。 （１） 集束した荷電粒子ビームを照射するための荷電
粒子ビーム光学系と、上記荷電粒子ビームの照射対象か
ら発生する二次荷電粒子を検出するための検出器と、該
検出器で得られた二次荷電粒子に基づいて荷電粒子像を
形成する画像表示装置とを備えた荷電粒子ビーム装置に
おいて、前記荷電粒子ビーム装置内を移動可能な接触型
温度計測機構を備えたことを特徴とする荷電粒子ビーム
装置。Means for Solving the Problems In order to achieve the above-mentioned object, the present inventors have observed and processed a sample immediately before.
The present invention has been completed by examining a device for bringing a contact-type microminiature temperature measuring section into contact with a sample, and the gist of the present invention is as follows. (1) A charged particle beam optical system for irradiating a focused charged particle beam, a detector for detecting secondary charged particles generated from an irradiation target of the charged particle beam, and a detector obtained by the detector A charged particle beam apparatus comprising: an image display device for forming a charged particle image based on secondary charged particles; and a contact-type temperature measurement mechanism movable in the charged particle beam apparatus. Particle beam device.
【０００９】（２） 前記荷電粒子としてＧａイオンビ
ームを照射し対象試料を加工する荷電粒子ビーム装置で
あって、前記接触型温度計測機構が加工中の前記対象物
の温度を計測するものであることを特徴とする前記
（１）に記載の荷電粒子ビーム装置。 （３） 前記接触型温度計測機構が、小型熱電対からな
ることを特徴とする前記（１）または（２）に記載の荷
電粒子ビーム装置。(2) A charged particle beam apparatus for processing a target sample by irradiating a Ga ion beam as the charged particles, wherein the contact-type temperature measurement mechanism measures the temperature of the target during processing. The charged particle beam device according to the above (1), characterized in that: (3) The charged particle beam device according to (1) or (2), wherein the contact-type temperature measuring mechanism is formed of a small thermocouple.
【００１０】（４） 前記小型熱電対の先端部を、ビー
ムアシストデポジションによって試料と固定させるため
のガス源を備えることを特徴とする前記（３）に記載の
荷電粒子ビーム装置。(4) The charged particle beam device according to (3), further comprising a gas source for fixing the tip of the small thermocouple to a sample by beam assisted deposition.
【００１１】[0011]
【発明の実施の形態】以下に本発明について、詳細に説
明する。図１に本発明の装置の構成図を模式的に示す。
荷電粒子ビーム光学系１から集束されたイオンビーム２
が試料３に照射される。試料を装着した試料ステージ４
は、ｘ、ｙ、ｚの三軸移動と、試料ステージ自身の回転
が可能であり、実質的にあらゆる部位を任意の角度から
観察し、かつイオンビームで加工することが可能であ
る。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. FIG. 1 schematically shows a configuration diagram of the apparatus of the present invention.
Ion beam 2 focused from charged particle beam optical system 1
Is irradiated on the sample 3. Sample stage 4 with sample mounted
Is capable of x-, y-, and z-axis movement and rotation of the sample stage itself, allowing observation of virtually any part from any angle and processing with an ion beam.
【００１２】観察には、試料から発生する二次荷電粒子
を検出器５で検出し、画像表示装置６により画像化す
る。画像表示装置６を見ながら、試料の観察領域、加工
領域を決定していき、連動させたビーム偏向制御装置７
を介して、荷電粒子ビーム光学系１の制御を行う。観察
領域、或いは加工領域の温度計測をするために、接触型
温度計測部８は微動移動手段９とともに移動制御装置１
０を介して、荷電粒子ビーム装置内で自在に移動させる
ことができる。接触型温度計測部８の試料への接着方法
として、タングステン化合物ガスや炭素化合物ガスを用
いて試料に接着させる方法があり、そのための試料近傍
へのガスを放出するノズル１２とガス源１３が荷電粒子
ビーム装置に装着される。For observation, secondary charged particles generated from the sample are detected by the detector 5 and imaged by the image display device 6. While observing the image display device 6, the observation region and the processing region of the sample are determined, and the linked beam deflection control device 7
The control of the charged particle beam optical system 1 is performed via. In order to measure the temperature of the observation region or the processing region, the contact-type temperature measuring unit 8 is moved together with the fine movement moving means 9 to move the movement control device 1
0, it can be moved freely in the charged particle beam device. As a method of adhering the contact-type temperature measuring section 8 to the sample, there is a method of adhering to the sample using a tungsten compound gas or a carbon compound gas. For this purpose, the nozzle 12 and the gas source 13 for discharging gas near the sample are charged. Attached to the particle beam device.
【００１３】接触型温度計測部８として、極小の熱電対
を用いた場合の模式図を図２に示す。熱電対先端部１６
は接触型温度計測部８と一体化させて、微動移動手段９
及び粗動移動手段１４を通して荷電粒子ビーム装置外へ
引き出して、温度計測装置１１と接続させる。この時、
接触型温度計測部８を荷電粒子ビーム装置内で自在に動
かせるように、微動移動手段９と粗動移動手段１４の間
に伸縮可能な熱電対部分１５を設けた。FIG. 2 is a schematic diagram in the case where a very small thermocouple is used as the contact-type temperature measuring section 8. Thermocouple tip 16
Is integrated with the contact-type temperature measuring section 8 and
Then, it is drawn out of the charged particle beam device through the coarse movement moving means 14 and connected to the temperature measuring device 11. At this time,
An extendable thermocouple part 15 is provided between the fine movement means 9 and the coarse movement means 14 so that the contact-type temperature measuring unit 8 can be freely moved in the charged particle beam device.
【００１４】熱電対は細い絶縁性ビニールなどに通して
設計されるが、例えばその絶縁性ビニールをらせん状に
させることで、極小の熱電対を破断させることなく伸縮
自在とさせることができる。なお実用的な駆動距離を確
保するためには、第２図に示したように、３軸マニピュ
レータを別の広範囲に移動できるマニピュレータにさら
に連結して構成することが望ましく、それらを微動移動
手段９と粗動移動手段１４と示してある。The thermocouple is designed to pass through a thin insulating vinyl or the like. For example, by forming the insulating vinyl into a spiral shape, it is possible to expand and contract the very small thermocouple without breaking it. In order to secure a practical driving distance, as shown in FIG. 2, it is preferable that the three-axis manipulator is further connected to another manipulator that can move over a wide range, and these are moved by fine movement moving means 9. And coarse movement moving means 14.
【００１５】微動移動手段９としては、積層圧電ブロッ
クを用いたものや、バイモルフ型圧電素子を利用したも
の、或いは、メカニカルなマニピュレータのいずれでも
構わない。粗動移動手段１４は、例えばステッピングモ
ーターとウオームギヤを用いたマニピュレータである。
微動移動手段９として変位量の大きいものを用いれば粗
動移動手段１４は必要ないが、高精度の位置決めが可能
な積層型圧電ブロックなどの変位量は１０〜１００μｍ
と小さいので、粗動移動手段１４を組み合わせて使うこ
とが好ましい。The fine movement moving means 9 may be any one using a laminated piezoelectric block, one using a bimorph type piezoelectric element, or a mechanical manipulator. The coarse movement means 14 is, for example, a manipulator using a stepping motor and a worm gear.
If a fine displacement moving means 9 having a large displacement is used, the coarse movement moving means 14 is not required, but the displacement of a laminated piezoelectric block capable of high-precision positioning is 10 to 100 μm.
Therefore, it is preferable to use the coarse movement moving means 14 in combination.
【００１６】図３は、実際にＧａイオンビームで加工中
の温度計測例を模式的に示したものである。熱電対先端
部１６をタングステン化合物ガスを利用したビームアシ
ストデポジション膜により試料に固定して、イオンビー
ム加工中の温度計測を行うことができる。ガリウムイオ
ンビーム加工により、熱電対先端部１６も一緒に加工さ
れる場合があるが、熱電対で２本の先端部を再び接点化
させる場合にも、このタングステン化合物ガスを利用し
たビームアシストデポジション法を用いることができ
る。FIG. 3 schematically shows an example of temperature measurement during processing with a Ga ion beam. The thermocouple tip 16 is fixed to the sample by a beam-assisted deposition film using a tungsten compound gas, so that temperature measurement during ion beam processing can be performed. In some cases, the thermocouple tip 16 is also processed by gallium ion beam processing. However, even when the two tips are brought into contact again with the thermocouple, the beam assist deposition using this tungsten compound gas is also performed. Method can be used.
【００１７】また、本発明の装置によれば、ミクロンオ
ーダーで観察領域の温度計測をすることが可能になる。
例えば、照射量も少なく、温度上昇もほとんどない観察
ビーム下での温度計測を実施すれば、半導体デバイスな
どにおいて、電流を流した時の配線部の局所的な温度上
昇などを計測することが可能である。即ち、荷電粒子ビ
ーム装置内にシリコンデバイスを動作状態で設置し、本
装置の接触型温度計測機構によって温度上昇による特性
劣化部分を診断し、必要に応じその部分を観察用試料と
してサンプリングすることができる。Further, according to the apparatus of the present invention, it is possible to measure the temperature of the observation region on the order of microns.
For example, if the temperature is measured under an observation beam with a small irradiation dose and little temperature rise, it is possible to measure the local temperature rise of the wiring part when current is applied to semiconductor devices etc. It is. That is, the silicon device is installed in the charged particle beam device in the operating state, and the contact type temperature measurement mechanism of the present device diagnoses the characteristic deterioration portion due to the temperature rise, and if necessary, samples the portion as an observation sample. it can.
【００１８】[0018]
【実施例】以下、本発明の実施例を説明する。 ［実施例１］本発明の実施例として、電子顕微鏡試料作
製中に材質変化を引き起こして、従来薄片化が困難であ
った試料に適用した例を示す。Embodiments of the present invention will be described below. [Example 1] As an example of the present invention, an example will be described in which the material changes during the preparation of an electron microscope sample, and the present invention is applied to a sample which has conventionally been difficult to slice.
【００１９】試料は、りん酸塩化成処理を施した表面処
理鋼板を用いた。表層５μｍ程度がりん酸塩を含む無機
質被膜となっていて、走査電子顕微鏡観察により角柱状
の結晶が見えていた。通常の方法で集束イオンビーム加
工を行うと、加工中にこの角柱状の結晶が壊れて非晶質
化してしまうことが判っている。まず、温度計測するた
めに、接触型温度計測部として直径２０μｍのアルメル
−クロメル熱電対を利用した。集束イオンビーム装置内
で、その熱電対先端部をＷ（ＣＯ）６炭酸タングステン
ガスを放出した所にＧａイオンビームを照射させて、ビ
ームアシストデポジションで、タングステンを局所蒸着
し、熱電対先端と試料とを固定した。As the sample, a surface-treated steel sheet subjected to a phosphate chemical conversion treatment was used. About 5 μm of the surface layer was an inorganic film containing phosphate, and prismatic crystals were observed by scanning electron microscope observation. It has been known that when focused ion beam processing is performed by an ordinary method, the prismatic crystal is broken and becomes amorphous during the processing. First, to measure the temperature, an alumel-chromel thermocouple having a diameter of 20 μm was used as a contact-type temperature measurement unit. In the focused ion beam apparatus, the tip of the thermocouple was irradiated with a Ga ion beam at the point where the W (CO) 6 tungsten carbonate gas was released, and tungsten was locally deposited by beam-assisted deposition. The sample was fixed.
【００２０】従来通りのＧａイオンビーム加工を行った
結果、加工中に局所的に温度が１５０℃にも上昇してい
ることが判った。この温度上昇した部分では、角柱状の
結晶が非晶質化していることがその後の電子顕微鏡観察
で確認でき、温度上昇を５０℃以下に押さえる加工法の
検討が必要であることが判った。この知見に基づき、Ｇ
ａイオンビーム照射電流を１／５に下げて、時間はかか
ったが目的とする電子顕微鏡用の試料作製ができた。 ［実施例２］集束イオンビーム装置の中に、加熱ステー
ジを持ち込むことにより、局所領域での反応解析実験が
可能である。As a result of the conventional Ga ion beam processing, it was found that the temperature locally increased to 150 ° C. during the processing. At the portion where the temperature increased, it was confirmed by the subsequent electron microscope observation that the prismatic crystals were made amorphous, and it was found that it was necessary to study a processing method for suppressing the temperature increase to 50 ° C. or less. Based on this finding,
(a) The ion beam irradiation current was reduced to 1/5, and although it took time, a target sample for an electron microscope could be produced. [Embodiment 2] By introducing a heating stage into a focused ion beam apparatus, a reaction analysis experiment in a local region is possible.
【００２１】透過電子顕微鏡用の加熱ステージが集束イ
オンビーム装置と互換性があるのでこれを用いたが、そ
こでの熱電対は試料を載せる部分の近傍までしか接続さ
れていないので、本当の反応位置での温度計測はできな
い状態であった。鉄の上に亜鉛をのせた試料の断面組織
が観察できるようにイオンビーム加工を施し、これを上
記加熱ステージに装着し、本発明の荷電粒子ビーム装置
に設置した。亜鉛部分に本発明の接触型熱電対を取り付
け、Ｇａイオンビームを照射する時に発生する二次電子
を取り込み、画像表示装置６で様子を観察した。The heating stage for the transmission electron microscope was used because it is compatible with the focused ion beam apparatus. However, since the thermocouple there was connected only to the vicinity of the portion on which the sample was placed, the true reaction position was used. Temperature measurement was not possible. Ion beam processing was performed so that the cross-sectional structure of a sample in which zinc was placed on iron could be observed, this was mounted on the heating stage, and installed in the charged particle beam device of the present invention. The contact thermocouple of the present invention was attached to the zinc portion, secondary electrons generated when irradiating with a Ga ion beam were taken in, and the state was observed on the image display device 6.
【００２２】この結果、３５０℃で鉄と亜鉛の反応が進
み、鉄亜鉛合金化過程の進む様子を、正確に温度計測し
ながら観測することができた。従来、このような反応解
析は不可能であった。As a result, the reaction between iron and zinc progressed at 350 ° C., and the progress of the iron-zinc alloying process could be observed while accurately measuring the temperature. Conventionally, such a reaction analysis has not been possible.
【００２３】[0023]
【発明の効果】本発明によれば、荷電粒子ビーム装置内
で試料を加工している際の局所的な温度上昇量を計測す
ることができる。また加熱ステージを用いての加熱実験
の際にも、観察用のイオンビームが照射されている環境
下での測温が可能である。According to the present invention, it is possible to measure a local temperature rise during processing of a sample in a charged particle beam apparatus. Also, in a heating experiment using a heating stage, temperature measurement can be performed in an environment where an observation ion beam is irradiated.
【図１】図１は、本発明の装置の構成図を模式的に示し
たものである。FIG. 1 schematically shows a configuration diagram of an apparatus of the present invention.
【図２】図２は、接触型温度計測部として、極小の熱電
対を用いた場合の模式図である。FIG. 2 is a schematic diagram of a case where a very small thermocouple is used as a contact-type temperature measuring unit.
【図３】図３は、本発明を、実際にＧａイオンビームで
加工中の試料の温度計測に適用した一例を模式的に示し
たものである。FIG. 3 schematically shows an example in which the present invention is applied to temperature measurement of a sample actually being processed with a Ga ion beam.
１…集束イオンビーム光学系 ２…集束イオンビーム ３…試料 ４…試料台 ５…二次荷電粒子検出器 ６…画像表示装置 ７…ビーム走査制御装置 ８…接触型温度計測部 ９…微動移動手段 １０…移動制御装置 １１…温度計測装置 １２…ガス噴出ノズル １３…ガス源 １４…粗動移動手段 １５…熱電対 １６…熱電対先端部 DESCRIPTION OF SYMBOLS 1 ... Focused ion beam optical system 2 ... Focused ion beam 3 ... Sample 4 ... Sample stage 5 ... Secondary charged particle detector 6 ... Image display device 7 ... Beam scanning control device 8 ... Contact temperature measurement part 9 ... Fine movement moving means DESCRIPTION OF SYMBOLS 10 ... Movement control apparatus 11 ... Temperature measurement apparatus 12 ... Gas ejection nozzle 13 ... Gas source 14 ... Coarse movement means 15 ... Thermocouple 16 ... Thermocouple tip
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡田 守弘 千葉県富津市新富20−１ 新日本製鐵株式 会社技術開発本部内 (72)発明者 小池 英巳 茨城県ひたちなか市市毛882番地 株式会 社日立製作所内 Ｆターム(参考） 2G001 AA05 BA06 CA05 GA06 GA13 HA13 JA08 JA14 KA12 LA02 NA10 NA13 NA17 PA12 PA14 5C001 AA08 BB01 BB07 CC08 5C034 BB06 BB09 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Morihiro Okada 20-1 Shintomi, Futtsu-shi, Chiba Nippon Steel Corporation Technology Development Division (72) Inventor Hidemi Koike 882 Ma, Hitachinaka-shi, Ibaraki Co., Ltd. F-term in Hitachi (reference) 2G001 AA05 BA06 CA05 GA06 GA13 HA13 JA08 JA14 KA12 LA02 NA10 NA13 NA17 PA12 PA14 5C001 AA08 BB01 BB07 CC08 5C034 BB06 BB09
Claims (4)
の荷電粒子ビーム光学系と、上記荷電粒子ビームの照射
対象から発生する二次荷電粒子を検出するための検出器
と、該検出器で得られた二次荷電粒子に基づいて荷電粒
子像を形成する画像表示装置とを備えた荷電粒子ビーム
装置において、 前記荷電粒子ビーム装置内を移動可能な接触型温度計測
機構を備えたことを特徴とする荷電粒子ビーム装置。1. A charged particle beam optical system for irradiating a focused charged particle beam, a detector for detecting secondary charged particles generated from an object to be irradiated with the charged particle beam, and a detector obtained by the detector. A charged particle beam device comprising: an image display device that forms a charged particle image based on the obtained secondary charged particles; and a contact-type temperature measurement mechanism movable within the charged particle beam device. Charged particle beam equipment.
照射し対象試料を加工する荷電粒子ビーム装置であっ
て、前記接触型温度計測機構が加工中の前記対象試料の
温度を計測するものであることを特徴とする請求項１に
記載の荷電粒子ビーム装置。2. A charged particle beam apparatus for processing a target sample by irradiating a Ga ion beam as the charged particle, wherein the contact-type temperature measurement mechanism measures the temperature of the target sample during processing. The charged particle beam device according to claim 1, wherein:
からなることを特徴とする請求項１または２に記載の荷
電粒子ビーム装置。3. The charged particle beam device according to claim 1, wherein the contact-type temperature measuring mechanism is formed of a small thermocouple.
ストデポジションによって試料と固定させるためのガス
源を備えることを特徴とする請求項３に記載の荷電粒子
ビーム装置。4. The charged particle beam apparatus according to claim 3, further comprising a gas source for fixing the tip of the small thermocouple to a sample by beam-assisted deposition.
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| JP2002025494A true JP2002025494A (en) | 2002-01-25 |
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| JP3969935B2 JP3969935B2 (en) | 2007-09-05 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009266586A (en) * | 2008-04-24 | 2009-11-12 | Nippon Steel Corp | Local area temperature measuring device for focused ion-beam device, and temperature measuring method in local area |
| JP2015533012A (en) * | 2012-08-31 | 2015-11-16 | アクセリス テクノロジーズ， インコーポレイテッド | Implant-induced damage control in ion implantation |
-
2000
- 2000-07-05 JP JP2000203779A patent/JP3969935B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009266586A (en) * | 2008-04-24 | 2009-11-12 | Nippon Steel Corp | Local area temperature measuring device for focused ion-beam device, and temperature measuring method in local area |
| JP2015533012A (en) * | 2012-08-31 | 2015-11-16 | アクセリス テクノロジーズ， インコーポレイテッド | Implant-induced damage control in ion implantation |
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| Publication number | Publication date |
|---|---|
| JP3969935B2 (en) | 2007-09-05 |
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