JP2002014628A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JP2002014628A
JP2002014628A JP2001133607A JP2001133607A JP2002014628A JP 2002014628 A JP2002014628 A JP 2002014628A JP 2001133607 A JP2001133607 A JP 2001133607A JP 2001133607 A JP2001133607 A JP 2001133607A JP 2002014628 A JP2002014628 A JP 2002014628A
Authority
JP
Japan
Prior art keywords
insulating film
gate electrode
film
forming
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001133607A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002014628A5 (https=
Inventor
Shunpei Yamazaki
舜平 山崎
Yasuyuki Arai
康行 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001133607A priority Critical patent/JP2002014628A/ja
Publication of JP2002014628A publication Critical patent/JP2002014628A/ja
Publication of JP2002014628A5 publication Critical patent/JP2002014628A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001133607A 2000-04-27 2001-04-27 半導体装置およびその作製方法 Withdrawn JP2002014628A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001133607A JP2002014628A (ja) 2000-04-27 2001-04-27 半導体装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-128536 2000-04-27
JP2000128536 2000-04-27
JP2001133607A JP2002014628A (ja) 2000-04-27 2001-04-27 半導体装置およびその作製方法

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP2011095417A Division JP5159914B2 (ja) 2000-04-27 2011-04-21 Ｅｌ表示装置
JP2012016097A Division JP5073108B2 (ja) 2000-04-27 2012-01-30 半導体装置
JP2012016098A Division JP5244986B2 (ja) 2000-04-27 2012-01-30 半導体装置
JP2012181311A Division JP5401587B2 (ja) 2000-04-27 2012-08-20 液晶表示装置、及び電子装置

Publications (2)

Publication Number Publication Date
JP2002014628A true JP2002014628A (ja) 2002-01-18
JP2002014628A5 JP2002014628A5 (https=) 2008-06-19

Family

ID=26591031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001133607A Withdrawn JP2002014628A (ja) 2000-04-27 2001-04-27 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP2002014628A (https=)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003076299A (ja) * 2001-07-25 2003-03-14 Lg Phillips Lcd Co Ltd 製造工程が単純化されたアクティブマトリックス型有機電界発光素子及びその製造方法
JP2003332072A (ja) * 2002-03-04 2003-11-21 Hitachi Displays Ltd 有機ｅｌ発光表示装置
JP2005063952A (ja) * 2003-07-25 2005-03-10 Semiconductor Energy Lab Co Ltd 発光装置の作製方法
JP2009157156A (ja) * 2007-12-27 2009-07-16 Sony Corp 画素回路および表示装置
JP2009265635A (ja) * 2008-03-31 2009-11-12 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
JP2010250341A (ja) * 2003-07-14 2010-11-04 Semiconductor Energy Lab Co Ltd 液晶表示装置、及び電子機器
US7915102B2 (en) 2005-06-23 2011-03-29 Samsung Mobile Display Co., Ltd. Methods of fabricating thin film transistor and organic light emitting display device using the same
JP2011197681A (ja) * 2000-04-27 2011-10-06 Semiconductor Energy Lab Co Ltd Ｅｌ表示装置
WO2012042564A1 (ja) * 2010-09-29 2012-04-05 パナソニック株式会社 表示装置用薄膜半導体装置、表示装置用薄膜半導体装置の製造方法、ｅｌ表示パネル及びｅｌ表示装置
WO2012042566A1 (ja) * 2010-09-29 2012-04-05 パナソニック株式会社 表示装置用薄膜半導体装置、表示装置用薄膜半導体装置の製造方法、ｅｌ表示パネル及びｅｌ表示装置
JP2015035608A (ja) * 2008-12-19 2015-02-19 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP2019050416A (ja) * 2008-10-24 2019-03-28 株式会社半導体エネルギー研究所 半導体装置
WO2025017439A1 (ja) * 2023-07-20 2025-01-23 株式会社半導体エネルギー研究所 半導体装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04313729A (ja) * 1991-04-09 1992-11-05 Mitsubishi Electric Corp 液晶表示装置
JPH06175158A (ja) * 1992-12-10 1994-06-24 Seiko Epson Corp 液晶表示装置
JPH06324350A (ja) * 1993-05-14 1994-11-25 Nec Corp 薄膜電界効果型トランジスタアレイ
JPH09223804A (ja) * 1995-12-14 1997-08-26 Semiconductor Energy Lab Co Ltd 半導体装置
WO1998023995A1 (en) * 1996-11-27 1998-06-04 Hitachi, Ltd. Active matrix liquid crystal display
JPH10282505A (ja) * 1997-02-10 1998-10-23 Sharp Corp 液晶表示素子およびその製造方法
JPH1124604A (ja) * 1997-07-02 1999-01-29 Seiko Epson Corp 表示装置
JPH11223827A (ja) * 1998-02-09 1999-08-17 Nec Corp 液晶表示装置とその製造方法
JPH11231805A (ja) * 1998-02-10 1999-08-27 Sanyo Electric Co Ltd 表示装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04313729A (ja) * 1991-04-09 1992-11-05 Mitsubishi Electric Corp 液晶表示装置
JPH06175158A (ja) * 1992-12-10 1994-06-24 Seiko Epson Corp 液晶表示装置
JPH06324350A (ja) * 1993-05-14 1994-11-25 Nec Corp 薄膜電界効果型トランジスタアレイ
JPH09223804A (ja) * 1995-12-14 1997-08-26 Semiconductor Energy Lab Co Ltd 半導体装置
WO1998023995A1 (en) * 1996-11-27 1998-06-04 Hitachi, Ltd. Active matrix liquid crystal display
JPH10282505A (ja) * 1997-02-10 1998-10-23 Sharp Corp 液晶表示素子およびその製造方法
JPH1124604A (ja) * 1997-07-02 1999-01-29 Seiko Epson Corp 表示装置
JPH11223827A (ja) * 1998-02-09 1999-08-17 Nec Corp 液晶表示装置とその製造方法
JPH11231805A (ja) * 1998-02-10 1999-08-27 Sanyo Electric Co Ltd 表示装置

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9780124B2 (en) 2000-04-27 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel comprising first transistor second transistor and light-emitting element
US9099361B2 (en) 2000-04-27 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US9419026B2 (en) 2000-04-27 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2011197681A (ja) * 2000-04-27 2011-10-06 Semiconductor Energy Lab Co Ltd Ｅｌ表示装置
US8633488B2 (en) 2000-04-27 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US8178880B2 (en) 2000-04-27 2012-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2003076299A (ja) * 2001-07-25 2003-03-14 Lg Phillips Lcd Co Ltd 製造工程が単純化されたアクティブマトリックス型有機電界発光素子及びその製造方法
US8134524B2 (en) 2002-03-04 2012-03-13 Hitachi Displays, Ltd. Organic electroluminescent light emitting display device
JP2003332072A (ja) * 2002-03-04 2003-11-21 Hitachi Displays Ltd 有機ｅｌ発光表示装置
US8446347B2 (en) 2002-03-04 2013-05-21 Hitachi Displays, Ltd. Organic electroluminescent light emitting display device
US8847858B2 (en) 2002-03-04 2014-09-30 Japan Display Inc. Organic electroluminescent light emitting display device
US11289565B2 (en) 2002-03-04 2022-03-29 Samsung Display Co., Ltd. Organic electroluminescent light emitting display device
US7667674B2 (en) 2002-03-04 2010-02-23 Hitachi, Ltd. Organic electroluminescent light emitting display device
JP2010250341A (ja) * 2003-07-14 2010-11-04 Semiconductor Energy Lab Co Ltd 液晶表示装置、及び電子機器
JP2005063952A (ja) * 2003-07-25 2005-03-10 Semiconductor Energy Lab Co Ltd 発光装置の作製方法
US7915102B2 (en) 2005-06-23 2011-03-29 Samsung Mobile Display Co., Ltd. Methods of fabricating thin film transistor and organic light emitting display device using the same
JP2009157156A (ja) * 2007-12-27 2009-07-16 Sony Corp 画素回路および表示装置
US8519398B2 (en) 2008-03-31 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2009265635A (ja) * 2008-03-31 2009-11-12 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
US8138500B2 (en) 2008-03-31 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2013127626A (ja) * 2008-03-31 2013-06-27 Semiconductor Energy Lab Co Ltd 表示装置
US12009434B2 (en) 2008-10-24 2024-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistors and method for manufacturing the same
JP2019050416A (ja) * 2008-10-24 2019-03-28 株式会社半導体エネルギー研究所 半導体装置
US10763372B2 (en) 2008-10-24 2020-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with dual and single gate structure transistors
US11563124B2 (en) 2008-10-24 2023-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including flip-flop circuit which includes transistors
US12477781B2 (en) 2008-10-24 2025-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2015035608A (ja) * 2008-12-19 2015-02-19 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US8895989B2 (en) 2010-09-29 2014-11-25 Panasonic Corporation Thin-film semiconductor device for display apparatus, method for manufacturing thin-film semiconductor device for display apparatus, EL display panel, and EL display apparatus
WO2012042566A1 (ja) * 2010-09-29 2012-04-05 パナソニック株式会社 表示装置用薄膜半導体装置、表示装置用薄膜半導体装置の製造方法、ｅｌ表示パネル及びｅｌ表示装置
WO2012042564A1 (ja) * 2010-09-29 2012-04-05 パナソニック株式会社 表示装置用薄膜半導体装置、表示装置用薄膜半導体装置の製造方法、ｅｌ表示パネル及びｅｌ表示装置
US8791453B2 (en) 2010-09-29 2014-07-29 Panasonic Corporation Thin-film semiconductor device for display apparatus, method for manufacturing thin-film semiconductor device for display apparatus, EL display panel, and EL display apparatus
WO2025017439A1 (ja) * 2023-07-20 2025-01-23 株式会社半導体エネルギー研究所 半導体装置

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