JP2002009347A - Led light source and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a LED light source having high emission efficiency, excellent productivity, high accuracy and high degree of freedom in the shape and material of a sealing member, and its manufacturing method. SOLUTION: A plurality of LED chips 4 are mounted on a mother substrate 2 through a submount substrate 3. The LED chip 4 has a pair of positive and negative electrodes 4a, 4b on the side facing the submount substrate 3 and the pair of electrodes 4a, 4b are connected with the submount substrate 3 through a pair of bumps 37a, 37b formed by plating.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to an LED on a substrate.
(Light Emitting Diode) An LED light source equipped with a chip and a method of manufacturing the same, particularly an LED light source having high luminous efficiency, excellent productivity, high accuracy, and high degree of freedom in the shape and material of a sealing member. And its manufacturing method.

[0002]

2. Description of the Related Art A conventional LED light source is disclosed in, for example, Japanese Patent Application Laid-Open No. H11-168235.

FIG. 9 shows the LED light source. This LE
The D light source includes a pair of positive and negative leads 110A,
Connected to the LED mounting substrate 100 on which the LED 110B is formed and a pair of leads 110A and 110B via a pair of bumps 120a and 120b made of gold, solder, and the like, which are individually formed in a process different from the substrate manufacturing process. LED chip 130 and transparent resin 1 for sealing LED chip 130
40 and an underfill resin 150. The pair of leads 110 </ b> A and 110 </ b> B
A is formed to extend from a through the side surface 101b to the back surface 101c. The LED chip 130 has a reflective layer 131 on a lower surface 130b opposite to an upper surface 130a serving as a light emitting surface.
Further, a pair of positive and negative electrodes (not shown) is formed, and the pair of electrodes is connected to a pair of leads 110A and 110B via a pair of bumps 120a and 120b. When the LED mounting board 100 on which the LED chip 130 is mounted is mounted on the main board, the upper surface 130a of the LED chip 130 may be sucked and the bump 120
Since a and 120b may be peeled off, the flat upper surface of the transparent resin 140 having a certain degree of hardness is sucked and handled. According to such a configuration,
Since no electrode is provided on the light emitting surface of the LED chip 130, the luminous efficiency can be improved.

[0004]

However, the conventional LED
According to the light source, the bumps are formed in such a way that the fine wires of gold, solder, etc. are formed into a spherical shape and pressed by a bump bonder one by one, resulting in poor productivity. Position, it is difficult to obtain positional accuracy due to droop of the edge of the lead pattern, pattern shift, or the like. In addition, the LED chip mounted L
In order to handle the ED mounting substrate, the transparent resin 140 having a certain degree of hardness and having a flat upper surface must be provided in advance, so that the shape and material of the transparent resin are limited.

Accordingly, it is an object of the present invention to provide an LED light source having high luminous efficiency, excellent productivity, and high precision, and a method of manufacturing the same. It is another object of the present invention to provide an LED light source having a high degree of freedom in the shape and material of a sealing member, and a method for manufacturing the same.

[0006]

In order to achieve the above object, the present invention provides a pair of positive and negative back leads formed on the back surface of an insulating base, and a pair of back leads on the front surface of the insulating base. A substrate having a pair of positive and negative front leads connected by a metal connection portion, and a pair of positive and negative electrodes on a surface side facing the substrate, wherein the pair of electrodes is connected to the substrate via a pair of bonding bumps. An LED light source comprising: an LED chip connected to the pair of front leads; wherein the pair of bonding bumps are formed on the pair of front leads by plating. According to the above configuration,
Light from the plurality of LED chips is emitted from the light emission surface where no electrode is provided. In addition, productivity is improved by forming a pair of bonding bumps by plating.
Since the outer shape or the matching hole of the substrate can be used as a reference, high positional accuracy can be obtained. "A pair of bonding bumps"
Is not limited to the case where one bump is used for each of the positive and negative poles, the case where one bump is used for one of the poles, and the case where a plurality of bumps are used for the positive and negative poles Cases are included.

In order to achieve the above object, the present invention provides a pair of positive and negative back leads on the back surface of an insulating base material and a pair of positive and negative terminals connected to the pair of back leads on the front surface of the insulating base material. An aggregate substrate having a plurality of pairs of front leads is formed, a plurality of bonding bumps are respectively formed on the plurality of pairs of front leads of the aggregate substrate, and a plurality of pairs having a pair of positive and negative electrodes on one surface side. The LED chip is mounted on the collective substrate by connecting the pair of electrodes to the pair of bumps, and the collective substrate on which the plurality of LED chips are mounted is divided for each LED chip.
Provided is a method for manufacturing an ED light source.

[0008]

1 and 2 show an LED surface light emitting device to which an LED light source according to an embodiment of the present invention is applied. FIG. 1 (a) is a front view, and FIG. 1 (b) is a side view. FIG. 2 (c) is a bottom view, FIG. 2 (a) is an enlarged view of part A of FIG. 1 (a), FIG. 2 (b) is an enlarged view of part B of FIG. 1 (a), FIG.
Is a bottom view of the LED chip.

The LED surface light emitting device 1 has a mother board 2 having a wiring pattern formed on a front surface 2a and a back surface 2b.

FIG. 1 shows a front surface 2a of the mother substrate 2.
As shown in FIGS. 2A and 2B and FIG. 2, a plurality of LED chips 4 arranged in a row via a submount substrate 3 and a plurality of transparent resin sealing each LED chip 4. The light from the sealing member 5, the spacer 6 disposed on the surface 2a of the mother substrate 2, and the LED chip 4 is shown in FIG.
, A reflector 7 that reflects upward, a transparent plate 8 that protects the inside and transmits light from the LED chip 4, and a cover 9 that protects the entire device 1. Note that an LED light source is configured by the submount substrate 3, the LED chip 4, and the sealing member 5.

The back surface 2b of the mother substrate 2 has a structure shown in FIG.
As shown in (c), a plurality of resistance elements 10 constituting an LED drive circuit described later and one Zener diode 1
1 is provided. In FIG. 1, the left side 12A,
13A and the right side 12B, 13B are a plurality of LED chips 4
Connection terminals for applying a voltage to the left and right connection terminals 12 according to the wiring lead-out direction at the time of assembling the device 1.
A, 13A, 12B, and 13B are properly used.

As shown in FIG. 1A, a total of 48 LED chips 4 are arranged on the mother substrate 2 via the submount substrate 3, four in the vertical direction and 12 in the horizontal direction. I have. The LED chip 4 is mounted on the sub-mount substrate 3 by flip-chip bonding (FCB). The LED chip 4 has a structure in which a semiconductor layer such as gallium nitride is laminated on a sapphire substrate which is a transparent insulator, and as shown in FIG. 40b is formed,
The bottom surface of the sapphire substrate serving as the upper surface 4a of the chip 4 is a light emitting surface. In this embodiment, for example, GaN (gallium nitride) that emits ultraviolet light having a wavelength of 380 nm
Uses a system semiconductor.

The mother substrate 2 has a wiring pattern printed on the front surface 2a and the back surface 2b of the base material. The base material of the mother board 2 has heat resistance and a low coefficient of expansion so as not to cause deformation or decrease in strength when the submount board 3 is mounted, and further has a light emission wavelength (for example, ultraviolet light) of the LED chip 4. Materials having high light reflectance and low light absorption with respect to (wavelength) are preferable. As such a material, for example, a glass epoxy resin having a high light reflectance of about 42% with respect to ultraviolet rays can be used. Further, when a material having a high light reflectance of about 42% with respect to ultraviolet rays is used as the base material of the submount substrate 3 closer to the LED chip 4 than the mother substrate 2, the light reflectance is higher than that. A low glass epoxy resin of about 10 to 22% may be used. In addition, when importance is placed on heat dissipation and strength, metals such as aluminum and ceramics such as alumina can be used.

The sealing member 5 provides the light emitted from the LED chip 4 with a predetermined light distribution characteristic by sealing the LED chip 4 with a predetermined outer shape. Further, the sealing member 5 is preferably made of a transparent resin material having durability with respect to the emission wavelength of the LED chip 4. For example, silicone can be used for ultraviolet rays.

As shown in FIG. 2A, the spacer 6
A plurality of circular openings 6a are provided at positions where the plurality of LED chips 4 are arranged, and are made of, for example, an elastic member such as silicone rubber. Since the spacer 6 is sandwiched between the reflector 7 and the mother substrate 2 by the cover 9, the inside of the device 1 is sealed, and dust and moisture can be prevented inside the device 1. Further, with such a configuration, variations or errors in the thickness direction of each component such as the transparent plate 8 can be absorbed, and distortion or warpage of the entire apparatus 1 can be prevented or reduced. 8 and the cover 9 can be protected.

The reflector 7 has an opening 7a at a position corresponding to the LED chip 4, and the periphery of the opening 7a is shown in FIG.
As shown in (a), a cone-shaped reflecting surface 7b is formed. The reflector 7 preferably has sufficient weather resistance against humidity, heat, ultraviolet rays, and the like, and is preferably formed of a material having a high light reflectance with respect to the emission wavelength of the LED chip 4. In this embodiment, FIGS. 1A and 1B and FIG.
As shown in (a), a metal plate made of copper, stainless steel, or the like is drawn and the opening 7 is formed at a position corresponding to the LED chip 4.
The periphery of the opening 7a is formed with a cone-shaped reflection surface 7b, and the surface is subjected to a treatment having a high light reflectance, for example, a bright Ni plating. By providing such a reflector 7, the amount of light in the direction (forward direction) from the chip 4 to the transparent body 8 can be further improved. The reflector 7 may be formed by plating or depositing a metal on a resin. As a result, the weight can be reduced as compared with a metal object as a whole. Further, the reflector 7 may be formed by bonding a thin metal cover to a base such as a resin. Thus, the metal cover can be formed by a method such as drawing of a thin metal plate, so that the material cost and the processing cost are low, and the weight of the whole can be reduced as compared with a metal object.

The transparent plate 8 is preferably made of a material having a high transmittance with respect to the emission wavelength of the LED chip 4 (for example, the wavelength of ultraviolet rays). As such a material, for example, glass can be used.

The cover 9 is, as shown in FIG.
It has a plurality of openings 9 a having an elongated shape corresponding to one LED chip 4. The cover 9 is preferably formed from a material having weather resistance and mechanical strength. As such a material, for example, a metal plate such as a steel material or aluminum can be used.

As shown in FIGS. 1A and 1C, the resistance element 10 is disposed between the LED chips 4 on the back surface 2b of the mother board 2 so as to be evenly spaced from each LED chip 4. Have been. As a result, the heat generated by the resistance element 10 does not affect the decrease in output and the decrease in reliability of the LED chip 4, and high reliability can be obtained. Each of the resistance elements 10
In addition to reducing the variation in current due to the VF difference of the ED chip 4, the current to each LED chip 4 is limited.

FIG. 3 shows a mounting structure of the LED chip 4 by FCB. The submount substrate 3 has a base material 31, and a positive lead 32a and a negative lead 32b are formed on a surface 31a of the base material 31 as shown in FIG.
A positive lead 33a and a negative lead 33b are formed on the back surface 31b of the base material 31 as shown in FIG.
a positive lead 32a, negative lead 32b and back surface 31b
Are connected to the positive lead 33a and the negative lead 33b by through-hole plating 34a, 34b, respectively.
A positive display portion 35 for indicating that it is on the positive electrode side is formed to extend on the positive lead 32a of FIG. Also, the surface 31
The positive lead 32a and the negative lead 32b of FIG.
There is a pair of triangular inspection areas 38a and 38b for applying a voltage to an area other than the area where the LED chip 4 of 1a is mounted to inspect the characteristics of the LED chip 4. The leads 32a, 32b, 33a, 33b and the positive display section 35 are formed by using an electrode wiring technique in a normal semiconductor manufacturing technique such as an etching method. For example, Au or the like is formed on a base metal layer such as Cu + Ni. Are formed by laminating metal plating layers. The position recognition plating bumps 36a, 36 made of a pair of Au are provided on the diagonal line of the positive lead 32a and the negative lead 32b on the surface 31a of the base material 31.
b, and the mounting plating bumps 37a, 3 made of Au are formed on the positive lead 32a and the negative lead 32b on the surface 31a.
7b are formed. Mounting plating bump 37a,
37b, as shown in FIG. 3C, before mounting the LED chip 4, has a shape such as an ellipse or an ellipse that is long in a direction perpendicular to the ultrasonic vibration direction 16 at the time of ultrasonic bonding. After the LED chip 4 is mounted, the LED chip 4 has a circular shape as shown in FIG. These plated bumps 36a, 36b, 37a, 37b are formed collectively by, for example, photolithography. By forming the mounting plating bumps 37a and 37b in the shape as shown in FIG. 3C, it is possible to increase the bonding area and improve the bonding strength while preventing short circuit. The area other than the area where the LED chip 4 is mounted on the front surface 31a is a submount substrate 3 on which the LED chip 4 is mounted via a pair of mounting plating bumps 37a and 37b.
It becomes an adsorption surface for handling.

The base material 31 has heat resistance and a low coefficient of expansion so as not to cause deformation and a decrease in strength when the LED chip 4 is mounted, and further has a light emission wavelength of the LED chip 4 (for example, a wavelength of ultraviolet light). A material having a high light reflectance and a low light absorptance with respect to (1) is preferable. As such a material, for example, a glass epoxy resin having a high light reflectance of about 42% with respect to ultraviolet rays can be used. In addition, an insulator such as another resin or ceramic may be used according to required characteristics.

FIG. 4 shows a wiring pattern on the front surface 2 a of the mother substrate 2. The wiring pattern 20 is formed using an electrode wiring technique in a normal semiconductor manufacturing technique such as an etching method, and is formed by, for example, laminating a metal plating layer such as Au on a base metal layer such as Cu + Ni. At the position where the sub-mount substrate 3 is mounted, as shown in FIG.
A pair of connection regions 20a and 20b to which the positive lead 33a and the negative lead 33b on the back surface 31b of the submount substrate 3 are connected via a silver paste are formed.
In addition, as shown in FIG. 3C, a connection area for testing is provided at a plurality of places (three places in this embodiment) of the surface 2a of the mother board 2 other than where the submount board 3 is mounted. 20a and 20b are formed.

FIG. 5 shows an LED driving circuit. This LE
As shown in the drawing, the D drive circuit includes a connection terminal 12 connected to the anodes of the LED chips 4 and a plurality of LEs.
A plurality of Ls connected to the D chip 4 via the resistance element 10
It includes an ED chip 4, a connection terminal 13 connected to the cathodes of the plurality of LED chips 4, and a Zener diode 11 for preventing overvoltage. Note that the Zener diode 11 is not limited to this, and an avalanche diode or another diode can be used.

6 to 8 show a manufacturing method according to the present embodiment. First, a submount aggregate substrate 30 for multi-cavity preparation is prepared (ST1). That is, FIGS. 6A and 6B,
7A, the positive lead 32a and the negative lead 32 are provided on the surface of the base material of the submount aggregate substrate 30.
b, and a positive lead 33a and a negative lead 33 are formed on the back surface.
b, and the positive lead 32a and the negative lead 32 on the surface are formed.
b and the positive lead 33a and the negative lead 33b on the rear surface are connected by through-hole platings 34a and 34b, respectively. Next, as shown in FIG. 7 (b), a resist 14 is applied, and as shown in FIG. 7 (c), ultraviolet rays (HV) are irradiated from above the mask 15 having the holes 15a. As shown in FIG. 1B, a hole 14a is formed in the resist 14. Next, as shown in FIG.
The mounting plating bumps 37a and 37b are formed therein. At this time, the position recognition plating bumps 36a, 36b
Also form. Next, the resist 14 is removed as shown in FIG. In this manner, the leads 32a,
32b, 33a, 33b and plated bumps 36a, 36
The submount aggregate substrate 30 on which b, 37a, and 37b are formed is completed.

Next, the LED chip 4 as a flip chip is flip-chip bonded on the submount aggregate substrate 30, the LED chip 4 is sealed by the sealing member 5 (ST2), and each LED chip is inspected by a dedicated inspection device. A characteristic test such as the light amount of No. 4 is performed (ST3). At this time,
The defective LED chip 4 is marked. Next, the submount aggregate substrate 30 is divided for each LED chip 4 to produce a plurality of submount substrates 3 (ST4).

On the other hand, a mother substrate 2 on which a plurality of sub-mount substrates 3 are mounted is prepared (ST10). here,
The wiring pattern 20 is formed on the base material of the mother substrate 2.
Next, circuit components such as the resistance element 10 and the zener diode 11 are mounted on the mother substrate 2 (ST11).

Next, the plurality of submount substrates 3 manufactured in step ST4 are mounted on the mother substrate 2 manufactured in step ST11 (ST12). LED chip 4
The top is sealed with silicon (ST13). Mother board 2
Then, the LED surface light-emitting device 1 is assembled by incorporating the spacer 6, the reflector 7, the transparent plate 8 and the cover 9 (ST1).
4), end with inspection of the entire device 1 (ST15).

According to the above embodiment, the LED chip 4
The submount substrate 3 on which the FCB is mounted has a large number of LED chips 4 on a multi-mount submount aggregate substrate 30.
Is manufactured by FCB mounting and dividing the same, so that productivity can be improved and cost can be reduced. In addition, by forming a large number of bumps at a high density on the submount collective substrate 30 at a time, the plating bump process can be shortened, so that the manufacturing cost of the submount substrate 3 can also be reduced. Also,
Since the FCB mounting of the LED chip 4 to which other stress such as pressure is applied in addition to the heating is performed on the submount substrate 3, the degree of freedom in selecting components to be mounted on the mother substrate 2 and the material of the mother substrate 2 is increased. growing. In addition, by unifying the size of the submount assembly substrate 30, a high-precision jig for FCB mounting can be unified. Further, since the sub-mount substrate 3 is mounted on the mother substrate 2, a general-purpose handling machine can be used, and handling becomes easy. Further, by forming the bumps by plating, the productivity is improved, and the outer shape (or matching hole) of the submount substrate 3 can be used as a reference, so that high positional accuracy can be obtained. When the mounting plating bumps 37a, 37b and the LED chip 4 are joined by ultrasonic vibration, the mounting plating bumps 37a, 37b become longer in the ultrasonic vibration direction. By making it long in the direction perpendicular to
Short circuits can be prevented. Further, when the submount substrate 3 is miniaturized to be as close as possible to the LED chip size, a chip size package (CSP) called an IC or the like can be manufactured. Further, even in a process without special and expensive equipment such as a flip chip bonder, it can be used by general equipment such as a mounter and a die bonder. In addition, it is possible to apply the present invention to a mounting package in which it is difficult to directly mount the flip chip bonder and its peripheral jigs due to the shape and form. Also,
Since the surface 31a of the submount substrate 3 has a suction surface for handling the submount substrate 3 on which the LED chip 4 is mounted, it is possible to handle in a molding dress (die bonding in a later step). . In addition, since resin sealing after die bond mounting is possible, it is possible to directly mold with a silicone-based resin that is very soft and difficult to handle with a machine. In addition, resin sealing can be performed in a shape such as the case 9 and the reflector 7 and a shape that is not restricted by the space of the submount substrate 3. In addition, since the characteristic inspection can be performed in a collective state, the number of inspection steps can be reduced. Further, since the FCB bare chip mounting is performed in the LED surface light emitting device using a large number of GaN-based LED chips, the luminous efficiency can be improved. In addition, the mother substrate 2 and the submount substrate 3 use a material having a high light reflectance and a low light absorptance with respect to the emission wavelength of the LED chip 4 to be mounted. Low power can be achieved. Also, since the Zener diode 11 is provided on the input side of the LED drive circuit, the GaN-based LED
Electrostatic breakdown due to low electrostatic withstand voltage of the chip 4 can be prevented. Further, after performing the characteristic inspection including the light amount test, the submount substrate 3 in which the LED chip 4 is mounted on the mother substrate 2 by FCB can be mounted. In order to alleviate the unevenness of the light amount, it is possible to select and mount, and the repair becomes unnecessary. Also, the LED chip 4 is mounted on the mother board 2 by FC.
Since the sealing member 5 is molded after the B-mounted submount substrate 3 is mounted, the shape and the material of the sealing member 5 can be determined after the mounting. Selectivity is expanded, and desired light distribution characteristics are easily realized. Further, since the entire surface light emitting device 1 is protected by the cover 9, reliability and mechanical strength can be ensured.

The present invention can be applied to a single LED lamp in which a lead wire or a lead frame is derived from an LED chip mounted on a substrate by FCB and the LED chip is sealed with a sealing member. Good. A plurality of LED chips are arranged in a matrix, and a plurality of LE chips are arranged.
The present invention may be applied to an image display device that selectively turns on a D chip according to an image signal.

[0030]

As described above, according to the LED light source and the method of manufacturing the same of the present invention, light from a plurality of LED chips is emitted from the light emission surface where no electrodes are provided, so that the luminous efficiency is reduced. Improvement can be achieved. Further, since the pair of bonding bumps are formed by plating, productivity is improved and high positional accuracy is obtained. In addition, LED
Since the sealing member can be provided after handling the substrate on which the chip is mounted, the degree of freedom of the shape and material of the sealing member is increased.

[Brief description of the drawings]

FIG. 1 shows an LED surface light emitting device to which an LED light source according to an embodiment of the present invention is applied, wherein (a) is a front view, (b) is a side view, and (c) is a bottom view.

2A is an enlarged view of a portion A in FIG. 1A, FIG. 2B is an enlarged view of a portion B in FIG. 1A, and FIG. 2C is a bottom view of the LED chip.

3A and 3B show an FCB structure according to the embodiment, and FIG.
Surface view of the submount substrate on which the ED chip is mounted,
(B) is a sectional view, (c) and (d) are views showing the shape of the bump for mounting the LED chip, and (e) is a rear view of the submount substrate.

4A is a front view of a mother substrate, and FIG. 4B is a view of FIG.
(C) is an enlarged view of an E portion of (a).

FIG. 5 is a diagram showing an LED drive circuit according to the present embodiment.

FIGS. 6A and 6B are diagrams showing a manufacturing process of the submount substrate of the present embodiment.

FIGS. 7A to 7F are diagrams showing a manufacturing process of the submount substrate of the present embodiment.

FIG. 8 is a diagram showing a manufacturing process of the LED surface light-emitting device of the present embodiment.

FIG. 9 is a sectional view showing a conventional LED light source.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 LED surface light emitting device 2 mother substrate 2 a front surface 2 b back surface 3 submount substrate 4 LED chip 4 a positive electrode 4 b negative electrode 5 sealing member 6 spacer 6 a opening 7 reflector 7 a opening 7 b reflecting surface 8 transparent plate 9 cover 9 a opening 10 resistance element DESCRIPTION OF SYMBOLS 11 Zener diode 12A, 12B, 13A, 13B Connection terminal 14 Resist 14a Hole 15 Mask 15a Hole 20 Wiring pattern 20a, 20b Connection area 30 Multi-mounting submount aggregate substrate 31a Front surface 31b Back surface 32a Positive lead 32b Negative lead 33a Positive lead 33b Negative leads 34a, 34b Through-hole plating 35 Positive display portion 36a, 36b Plating bump for position recognition 37a, 37b Plating bump for mounting 38a, 38b Inspection area 40a Positive electrode 40b Negative electrode 100 bases 101 substrate 101a surface 101b side 101c back side 110A, 110B leads 120a, 120b bump 130 LED chips 130a top 130b bottom surface 131 reflecting layer 140 transparent resin 150 underfill resin

Continued on the front page (72) Inventor Seiki Teshima 4-26-11 Higashi-Oizumi, Nerima-ku, Tokyo Co., Ltd. (72) Inventor Hiroshi Mizo 4-26-11, Higashi-Oizumi, Nerima-ku, Tokyo Co., Ltd. (72) Inventor Toshinobu Kuroyama 1 Ochiai Nagahata, Kasuga-cho, Nishi-Kasugai-gun, Aichi Prefecture Inside Toyoda Gosei Co., Ltd. (72) Inventor Hideo Yanagisawa 4-4-1, Ikeda-cho, Yokosuka City, Kanagawa Prefecture Inside Kanto Kasei Kogyo Co., Ltd. F term (reference) 5F041 AA03 AA42 CB15 DA09 DA41 DA78 5F044 KK01 KK17

Claims (14)

[Claims] 1. A pair of positive and negative back leads formed on a back surface of an insulating base material, and a pair of positive and negative front leads connected to the pair of back leads by a pair of metal connecting portions on the surface of the insulating base material. A substrate, comprising a pair of positive and negative electrodes on a surface side facing the substrate, and an LED chip in which the pair of electrodes is connected to the pair of front leads of the substrate via a pair of bonding bumps; The LED light source, wherein the pair of bonding bumps are formed on the pair of front leads by plating. 2. The LED light source according to claim 1, wherein said pair of bonding bumps has an elliptical shape or an oval shape in a direction perpendicular to a direction in which said pair of bonding bumps are arranged. 3. The LED according to claim 1, wherein the pair of bonding bumps have an elliptical shape or an oval shape that is long in a direction perpendicular to the ultrasonic vibration direction at the time of bonding by ultrasonic vibration.
light source. 4. The pair of front leads, wherein a bump for automatic recognition having a predetermined positional relationship with respect to the pair of bonding bumps is formed collectively by plating with the pair of bonding bumps. Item 7. The LED light source according to Item 1. 5. A method according to claim 1, wherein said pair of front leads is provided with said L on said surface.
2. The LED light source according to claim 1, comprising a pair of inspection areas for applying a voltage to an area other than an area where the ED chip is mounted to inspect characteristics of the LED chip. 6. The LED according to claim 1, wherein said LED chip is sealed by a sealing member made of a transparent resin which gives predetermined light distribution characteristics to light emitted by said LED chip in a predetermined outer shape. light source. 7. The substrate according to claim 6, wherein the substrate has a quadrangular shape, and the sealing member has a rectangular bottom surface corresponding to the quadrangular shape of the substrate and a spherical end portion.
LED light source as described. 8. The LED light source according to claim 1, wherein said pair of metal connection portions are formed by a pair of through-hole plating. 9. A suction surface for handling the substrate on which the LED chip is mounted via an area other than the area on which the LED chip is mounted, via the pair of bonding bumps. The LED light source according to claim 1, comprising: 10. A pair of positive and negative back leads on a back surface of the insulating base material.
And forming a collective substrate having a plurality of pairs of positive and negative front leads connected to the pair of back leads by a pair of metal connecting portions on the surface of the insulating base; and a plurality of sets of the pair of front leads of the collective substrate. Forming a pair of bonding bumps, and mounting a plurality of LED chips having a pair of positive and negative electrodes on one surface side by connecting the pair of electrodes to the pair of bumps and mounting the plurality of LED chips on the collective substrate; The collective substrate on which a plurality of LED chips are mounted is denoted by L
A method of manufacturing an LED light source, wherein the method is divided for each ED chip. 11. The method according to claim 10, wherein said plurality of pairs of bonding bumps are formed by plating.
Manufacturing method of ED light source. 12. A method according to claim 1, wherein forming a plurality of sets of said pair of bonding bumps on said collective substrate includes forming an automatic recognition bump having a predetermined positional relationship with respect to said pair of bonding bumps. Item 11. The method for manufacturing an LED light source according to Item 10. 13. The method for manufacturing an LED light source according to claim 12, wherein the plurality of sets of the pair of bonding bumps and the automatic recognition bumps are formed collectively by plating. 14. The mounting of the plurality of LED chips on the collective substrate is performed by a plurality of sealing members made of a transparent resin that imparts predetermined light distribution characteristics to light emitted by the LED chips according to a predetermined external shape. The method for manufacturing an LED light source according to claim 10, comprising a step of sealing the plurality of LED chips.