JP2001511849A5 - - Google Patents
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- Publication number
- JP2001511849A5 JP2001511849A5 JP1999531693A JP53169399A JP2001511849A5 JP 2001511849 A5 JP2001511849 A5 JP 2001511849A5 JP 1999531693 A JP1999531693 A JP 1999531693A JP 53169399 A JP53169399 A JP 53169399A JP 2001511849 A5 JP2001511849 A5 JP 2001511849A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Description
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6905897P | 1997-12-10 | 1997-12-10 | |
| US60/069,058 | 1997-12-10 | ||
| PCT/US1998/026256 WO1999029925A1 (en) | 1997-12-10 | 1998-12-10 | Process for low temperature cvd using bi carboxylates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001511849A JP2001511849A (ja) | 2001-08-14 |
| JP2001511849A5 true JP2001511849A5 (ja) | 2006-04-13 |
Family
ID=22086459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53169399A Withdrawn JP2001511849A (ja) | 1997-12-10 | 1998-12-10 | Ｂｉカルボキシレートを使用する強誘電性薄膜を製造するための低温ＣＶＤ処理法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6180420B1 (ja) |
| EP (1) | EP0963458B1 (ja) |
| JP (1) | JP2001511849A (ja) |
| KR (1) | KR100651290B1 (ja) |
| DE (1) | DE69823174T2 (ja) |
| WO (1) | WO1999029925A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6468160B2 (en) * | 1999-04-08 | 2002-10-22 | Nintendo Of America, Inc. | Security system for video game system with hard disk drive and internet access capability |
| US6348705B1 (en) * | 1999-12-22 | 2002-02-19 | Advanced Technology Materials, Inc. | Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor |
| US6440755B1 (en) * | 2001-07-30 | 2002-08-27 | The United States Of America As Represented By The Secretary Of The Navy | Method for increasing fracture toughness and reducing brittleness of ferroelectric polymer |
| US20040023416A1 (en) * | 2002-08-05 | 2004-02-05 | Gilbert Stephen R. | Method for forming a paraelectric semiconductor device |
| US20050019960A1 (en) * | 2003-07-25 | 2005-01-27 | Moon-Sook Lee | Method and apparatus for forming a ferroelectric layer |
| KR100682931B1 (ko) * | 2005-02-15 | 2007-02-15 | 삼성전자주식회사 | 비정질 유전막 및 그 제조 방법 |
| KR20140080118A (ko) * | 2012-12-20 | 2014-06-30 | 삼성전기주식회사 | 유전체 조성물 |
| CN108479759B (zh) * | 2018-04-24 | 2021-02-02 | 吉林建筑大学 | 一种可见光响应型镧掺杂钨酸铋催化剂及其制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8802942D0 (en) * | 1988-02-09 | 1988-03-09 | Aron Vecht & Co Ltd | Methods & apparatus for depositing thin films |
| US5648114A (en) | 1991-12-13 | 1997-07-15 | Symetrix Corporation | Chemical vapor deposition process for fabricating layered superlattice materials |
| US5478610A (en) | 1994-09-02 | 1995-12-26 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
| US5527567A (en) | 1994-09-02 | 1996-06-18 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
| US5679815A (en) * | 1994-09-16 | 1997-10-21 | Advanced Technology Materials, Inc. | Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same |
| JP3116768B2 (ja) | 1995-04-06 | 2000-12-11 | ソニー株式会社 | ビスマス層状化合物の製法 |
| JPH08339716A (ja) | 1995-04-10 | 1996-12-24 | Kojundo Chem Lab Co Ltd | ビスマス層状強誘電体薄膜の製造方法 |
| JP3480624B2 (ja) | 1995-06-09 | 2003-12-22 | シャープ株式会社 | 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子 |
| JP3133922B2 (ja) | 1995-06-09 | 2001-02-13 | シャープ株式会社 | 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子 |
| JP3593757B2 (ja) | 1995-08-25 | 2004-11-24 | 株式会社高純度化学研究所 | チタン酸ビスマス強誘電体薄膜の製造方法 |
| JPH0977592A (ja) | 1995-09-14 | 1997-03-25 | Kojundo Chem Lab Co Ltd | ビスマス層状強誘電体薄膜の製造方法 |
| JP3612839B2 (ja) * | 1996-02-13 | 2005-01-19 | 三菱電機株式会社 | 高誘電率薄膜構造、高誘電率薄膜形成方法および高誘電率薄膜形成装置 |
| JP3435966B2 (ja) * | 1996-03-13 | 2003-08-11 | 株式会社日立製作所 | 強誘電体素子とその製造方法 |
| US5902639A (en) * | 1997-03-31 | 1999-05-11 | Advanced Technology Materials, Inc | Method of forming bismuth-containing films by using bismuth amide compounds |
-
1998
- 1998-12-09 US US09/208,543 patent/US6180420B1/en not_active Expired - Fee Related
- 1998-12-10 EP EP98963837A patent/EP0963458B1/en not_active Expired - Lifetime
- 1998-12-10 DE DE69823174T patent/DE69823174T2/de not_active Expired - Fee Related
- 1998-12-10 JP JP53169399A patent/JP2001511849A/ja not_active Withdrawn
- 1998-12-10 KR KR1019997007026A patent/KR100651290B1/ko not_active IP Right Cessation
- 1998-12-10 WO PCT/US1998/026256 patent/WO1999029925A1/en not_active Application Discontinuation