JP2001510613A - 整合された磁気ベクトルを有するｍｒａｍ - Google Patents

整合された磁気ベクトルを有するｍｒａｍ

Info

Publication number
JP2001510613A
JP2001510613A JP53315798A JP53315798A JP2001510613A JP 2001510613 A JP2001510613 A JP 2001510613A JP 53315798 A JP53315798 A JP 53315798A JP 53315798 A JP53315798 A JP 53315798A JP 2001510613 A JP2001510613 A JP 2001510613A
Authority
JP
Japan
Prior art keywords
magnetic
layer
width
magnetic material
storage cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP53315798A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001510613A5 (enExample
Inventor
シ，ジン
ツ，セオドア
テラニ，サイエド・エヌ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JP2001510613A publication Critical patent/JP2001510613A/ja
Publication of JP2001510613A5 publication Critical patent/JP2001510613A5/ja
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5616—Multilevel magnetic memory cell using non-magnetic conducting interlayer, e.g. GMR, SV, PSV

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP53315798A 1997-02-05 1998-02-03 整合された磁気ベクトルを有するｍｒａｍ Ceased JP2001510613A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/795,488 US5757695A (en) 1997-02-05 1997-02-05 Mram with aligned magnetic vectors
US08/795,488 1997-02-05
PCT/US1998/001905 WO1998034231A1 (en) 1997-02-05 1998-02-03 Mram with aligned magnetic vectors

Publications (2)

Publication Number Publication Date
JP2001510613A true JP2001510613A (ja) 2001-07-31
JP2001510613A5 JP2001510613A5 (enExample) 2005-10-06

Family

ID=25165646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53315798A Ceased JP2001510613A (ja) 1997-02-05 1998-02-03 整合された磁気ベクトルを有するｍｒａｍ

Country Status (4)

Country Link
US (1) US5757695A (enExample)
JP (1) JP2001510613A (enExample)
DE (1) DE19882055T1 (enExample)
WO (1) WO1998034231A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11110961A (ja) * 1997-10-02 1999-04-23 Canon Inc 磁気薄膜メモリ
JP2005535111A (ja) * 2002-07-17 2005-11-17 フリースケール セミコンダクター インコーポレイテッド 改良された記憶密度を備えた多値ｍｒａｍ

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6590750B2 (en) 1996-03-18 2003-07-08 International Business Machines Corporation Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
US5928952A (en) * 1997-11-05 1999-07-27 Zymark Corporation Scheduled system and method for processing chemical products
US6147900A (en) * 1997-11-06 2000-11-14 Nonvolatile Electronics, Incorporated Spin dependent tunneling memory
US6242770B1 (en) 1998-08-31 2001-06-05 Gary Bela Bronner Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method for forming the same
US6005800A (en) * 1998-11-23 1999-12-21 International Business Machines Corporation Magnetic memory array with paired asymmetric memory cells for improved write margin
US6391483B1 (en) 1999-03-30 2002-05-21 Carnegie Mellon University Magnetic device and method of forming same
DE69935148T2 (de) * 1999-06-25 2007-06-06 Freescale Semiconductors, Inc., Austin Eine magnetoresistive ram speicherzelle mit geringer umschaltfeldstärke
US6391658B1 (en) 1999-10-26 2002-05-21 International Business Machines Corporation Formation of arrays of microelectronic elements
US6205053B1 (en) * 2000-06-20 2001-03-20 Hewlett-Packard Company Magnetically stable magnetoresistive memory element
US6538921B2 (en) * 2000-08-17 2003-03-25 Nve Corporation Circuit selection of magnetic memory cells and related cell structures
US6579625B1 (en) * 2000-10-24 2003-06-17 Motorola, Inc. Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers
JP4458703B2 (ja) 2001-03-16 2010-04-28 株式会社東芝 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置
US6466475B1 (en) 2001-10-31 2002-10-15 Hewlett-Packard Company Uniform magnetic environment for cells in an MRAM array
US6798691B1 (en) 2002-03-07 2004-09-28 Silicon Magnetic Systems Asymmetric dot shape for increasing select-unselect margin in MRAM devices
JP3769241B2 (ja) * 2002-03-29 2006-04-19 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
JP3684225B2 (ja) * 2002-09-30 2005-08-17 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US6956257B2 (en) * 2002-11-18 2005-10-18 Carnegie Mellon University Magnetic memory element and memory device including same
KR100468861B1 (ko) * 2003-01-07 2005-01-29 삼성전자주식회사 고선택성을 가지는 자기저항 메모리
JP2004296859A (ja) * 2003-03-27 2004-10-21 Renesas Technology Corp 磁気記録素子及び磁気記録素子の製造方法
US6785160B1 (en) * 2003-04-29 2004-08-31 Hewlett-Packard Development Company, L.P. Method of providing stability of a magnetic memory cell
US7274080B1 (en) * 2003-08-22 2007-09-25 International Business Machines Corporation MgO-based tunnel spin injectors
US7029941B2 (en) * 2003-08-25 2006-04-18 Headway Technologies, Inc. Magnetic random access memory designs with controlled magnetic switching mechanism
US6943040B2 (en) * 2003-08-28 2005-09-13 Headway Technologes, Inc. Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
US6929957B2 (en) * 2003-09-12 2005-08-16 Headway Technologies, Inc. Magnetic random access memory designs with patterned and stabilized magnetic shields
US20050141148A1 (en) * 2003-12-02 2005-06-30 Kabushiki Kaisha Toshiba Magnetic memory
US7105372B2 (en) * 2004-01-20 2006-09-12 Headway Technologies, Inc. Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
JP2005317739A (ja) * 2004-04-28 2005-11-10 Toshiba Corp 磁気記憶装置およびその製造方法
US7580228B1 (en) * 2004-05-29 2009-08-25 Lauer Mark A Current perpendicular to plane sensor with non-rectangular sense layer stack
US20060101111A1 (en) * 2004-10-05 2006-05-11 Csi Technology, Inc. Method and apparatus transferring arbitrary binary data over a fieldbus network
US7355884B2 (en) * 2004-10-08 2008-04-08 Kabushiki Kaisha Toshiba Magnetoresistive element
US7599156B2 (en) * 2004-10-08 2009-10-06 Kabushiki Kaisha Toshiba Magnetoresistive element having specially shaped ferromagnetic layer
JP4468258B2 (ja) * 2005-07-15 2010-05-26 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US20070019337A1 (en) * 2005-07-19 2007-01-25 Dmytro Apalkov Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements
US7486552B2 (en) * 2007-05-21 2009-02-03 Grandis, Inc. Method and system for providing a spin transfer device with improved switching characteristics
WO2008154519A1 (en) * 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149285A (ja) * 1987-12-04 1989-06-12 Hitachi Ltd 磁性薄膜記憶素子
JPH06295419A (ja) * 1993-02-23 1994-10-21 Internatl Business Mach Corp <Ibm> 磁気抵抗記憶素子、アレイおよび装置
JPH0766033A (ja) * 1993-08-30 1995-03-10 Mitsubishi Electric Corp 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ
JPH08504533A (ja) * 1992-09-24 1996-05-14 ノンボラタイル エレクトロニクス，インコーポレイテッド 磁気抵抗性メモリ構造大フラクション利用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448438A (en) * 1965-03-19 1969-06-03 Hughes Aircraft Co Thin film nondestructive memory
US4731757A (en) * 1986-06-27 1988-03-15 Honeywell Inc. Magnetoresistive memory including thin film storage cells having tapered ends
JPH0721848B2 (ja) * 1987-02-17 1995-03-08 シーゲイト テクノロジー インターナショナル 磁気抵抗センサ及びその製造方法
DE4327458C2 (de) * 1993-08-16 1996-09-05 Inst Mikrostrukturtechnologie Sensorchip zur hochauflösenden Messung der magnetischen Feldstärke

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149285A (ja) * 1987-12-04 1989-06-12 Hitachi Ltd 磁性薄膜記憶素子
JPH08504533A (ja) * 1992-09-24 1996-05-14 ノンボラタイル エレクトロニクス，インコーポレイテッド 磁気抵抗性メモリ構造大フラクション利用
JPH06295419A (ja) * 1993-02-23 1994-10-21 Internatl Business Mach Corp <Ibm> 磁気抵抗記憶素子、アレイおよび装置
JPH0766033A (ja) * 1993-08-30 1995-03-10 Mitsubishi Electric Corp 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11110961A (ja) * 1997-10-02 1999-04-23 Canon Inc 磁気薄膜メモリ
JP2005535111A (ja) * 2002-07-17 2005-11-17 フリースケール セミコンダクター インコーポレイテッド 改良された記憶密度を備えた多値ｍｒａｍ

Also Published As

Publication number Publication date
DE19882055T1 (de) 2000-02-24
WO1998034231A1 (en) 1998-08-06
US5757695A (en) 1998-05-26

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