JP2001508597A - エピタキシャル成長用炭化珪素ウェーハ製造方法 - Google Patents
エピタキシャル成長用炭化珪素ウェーハ製造方法Info
- Publication number
- JP2001508597A JP2001508597A JP52400998A JP52400998A JP2001508597A JP 2001508597 A JP2001508597 A JP 2001508597A JP 52400998 A JP52400998 A JP 52400998A JP 52400998 A JP52400998 A JP 52400998A JP 2001508597 A JP2001508597 A JP 2001508597A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- diamond
- silicon carbide
- steps
- template
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010432 diamond Substances 0.000 claims abstract description 49
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 48
- 239000002002 slurry Substances 0.000 claims abstract description 44
- 239000000203 mixture Substances 0.000 claims abstract description 39
- 239000000314 lubricant Substances 0.000 claims abstract description 19
- 238000007730 finishing process Methods 0.000 claims abstract 4
- 235000012431 wafers Nutrition 0.000 claims description 61
- 238000005498 polishing Methods 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000007517 polishing process Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RZVHIXYEVGDQDX-UHFFFAOYSA-N 9,10-anthraquinone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 RZVHIXYEVGDQDX-UHFFFAOYSA-N 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/752,112 | 1996-11-20 | ||
| US08/752,112 US5895583A (en) | 1996-11-20 | 1996-11-20 | Method of preparing silicon carbide wafers for epitaxial growth |
| PCT/US1997/021883 WO1998022978A1 (en) | 1996-11-20 | 1997-11-20 | Method of preparing silicon carbide wafers for epitaxial growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001508597A true JP2001508597A (ja) | 2001-06-26 |
| JP2001508597A5 JP2001508597A5 (enExample) | 2005-06-16 |
Family
ID=25024926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52400998A Ceased JP2001508597A (ja) | 1996-11-20 | 1997-11-20 | エピタキシャル成長用炭化珪素ウェーハ製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5895583A (enExample) |
| EP (1) | EP0960436A1 (enExample) |
| JP (1) | JP2001508597A (enExample) |
| WO (1) | WO1998022978A1 (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005260225A (ja) * | 2004-03-03 | 2005-09-22 | Schott Ag | 表面欠陥の少ないウェハーの製造方法、同方法により得られるウェハー、及び同ウェハーから成る電子部品 |
| US7118458B2 (en) | 2004-08-23 | 2006-10-10 | Matsushita Electric Industrial Co., Ltd. | Method for polishing silicon carbide crystal substrate |
| JP2013125969A (ja) * | 2011-12-13 | 2013-06-24 | Samsung Corning Precision Materials Co Ltd | 半導体基板の研磨方法及び半導体基板の研磨装置 |
| US9165779B2 (en) | 2012-10-26 | 2015-10-20 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| US9337277B2 (en) | 2012-09-11 | 2016-05-10 | Dow Corning Corporation | High voltage power semiconductor device on SiC |
| US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19722679A1 (de) * | 1997-05-30 | 1998-12-03 | Wacker Siltronic Halbleitermat | Scheibenhalter und Verfahren zur Herstellung einer Halbleiterscheibe |
| JP3099002B1 (ja) * | 1999-06-25 | 2000-10-16 | 茂徳科技股▲ふん▼有限公司 | ２段階化学機械研磨方法 |
| US6399499B1 (en) * | 1999-09-14 | 2002-06-04 | Jeong Gey Lee | Method for fabricating an electrode of a plasma chamber |
| JP4549471B2 (ja) * | 2000-01-18 | 2010-09-22 | 株式会社ディスコ | 板状物研削装置及び板状物研削方法 |
| US20020187427A1 (en) * | 2001-05-18 | 2002-12-12 | Ulrich Fiebag | Additive composition for both rinse water recycling in water recycling systems and simultaneous surface treatment of lithographic printing plates |
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| TW574086B (en) * | 2001-11-27 | 2004-02-01 | Nanya Technology Corp | On-pipe vibrator |
| US7379203B2 (en) * | 2002-03-22 | 2008-05-27 | Laser Substrates, Inc. | Data capture during print process |
| FR2843061B1 (fr) * | 2002-08-02 | 2004-09-24 | Soitec Silicon On Insulator | Procede de polissage de tranche de materiau |
| US7601446B2 (en) * | 2002-11-07 | 2009-10-13 | Hoya Corporation | Substrate for information recording medium, information recording medium and method for manufacturing same |
| FR2857895B1 (fr) * | 2003-07-23 | 2007-01-26 | Soitec Silicon On Insulator | Procede de preparation de surface epiready sur films minces de sic |
| US7018554B2 (en) * | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
| US20060108325A1 (en) * | 2004-11-19 | 2006-05-25 | Everson William J | Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers |
| DE102005024073A1 (de) * | 2005-05-25 | 2006-11-30 | Siltronic Ag | Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur |
| EP1772901B1 (en) * | 2005-10-07 | 2012-07-25 | Rohm and Haas Electronic Materials, L.L.C. | Wafer holding article and method for semiconductor processing |
| RU2345442C2 (ru) * | 2006-12-06 | 2009-01-27 | Институт кристаллографии имени А.В. Шубникова Российской академии Наук | Способ изготовления нанополированных пластин из карбида кремния |
| US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
| US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
| US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
| US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
| US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
| US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
| CN105500120B (zh) * | 2015-11-25 | 2018-05-22 | 厦门市三安光电科技有限公司 | 一种晶圆研磨的控制方法 |
| CN115594508A (zh) | 2017-03-29 | 2023-01-13 | 帕里杜斯有限公司（Us） | 碳化硅空间形体及形成球状体的方法 |
| US20250282021A1 (en) * | 2024-03-07 | 2025-09-11 | Wolfspeed, Inc. | Disc Grinding for Semiconductor Wafers on Polishing System |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3956092A (en) * | 1971-02-19 | 1976-05-11 | Aktiebolaget C. E. Johansson | Method of making measuring elements such as gauge blocks |
| US4475981A (en) * | 1983-10-28 | 1984-10-09 | Ampex Corporation | Metal polishing composition and process |
| US4599827A (en) * | 1985-06-24 | 1986-07-15 | The United States Of America As Represented By The Secretary Of The Army | Metallographic preparation of particulate filled aluminum metal matrix composite material |
| US5165981A (en) * | 1987-03-20 | 1992-11-24 | Sumitomo Electric Industries, Ltd. | Ceramic substrate and preparation of the same |
| US4837923A (en) * | 1988-04-29 | 1989-06-13 | Magnetic Peripherals Inc. | Surface finishing for magnetic transducers |
| US4946547A (en) * | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
| US5149338A (en) * | 1991-07-22 | 1992-09-22 | Fulton Kenneth W | Superpolishing agent, process for polishing hard ceramic materials, and polished hard ceramics |
| JPH0774839B2 (ja) * | 1991-09-30 | 1995-08-09 | 東芝セラミックス株式会社 | Ｓｏｒ用ミラー |
| JPH06263595A (ja) * | 1993-03-10 | 1994-09-20 | Canon Inc | ダイヤモンド被覆部材及びその製造方法 |
| US5300130A (en) * | 1993-07-26 | 1994-04-05 | Saint Gobain/Norton Industrial Ceramics Corp. | Polishing material |
| JP2849533B2 (ja) * | 1993-08-18 | 1999-01-20 | 長野電子工業株式会社 | ウェーハの研磨方法 |
| JPH08323604A (ja) * | 1995-05-31 | 1996-12-10 | Canon Inc | ＳｉＣの研磨方法および光学素子の製造方法 |
| US5718618A (en) * | 1996-02-09 | 1998-02-17 | Wisconsin Alumni Research Foundation | Lapping and polishing method and apparatus for planarizing photoresist and metal microstructure layers |
-
1996
- 1996-11-20 US US08/752,112 patent/US5895583A/en not_active Expired - Lifetime
-
1997
- 1997-11-20 WO PCT/US1997/021883 patent/WO1998022978A1/en not_active Ceased
- 1997-11-20 EP EP97949686A patent/EP0960436A1/en not_active Withdrawn
- 1997-11-20 JP JP52400998A patent/JP2001508597A/ja not_active Ceased
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005260225A (ja) * | 2004-03-03 | 2005-09-22 | Schott Ag | 表面欠陥の少ないウェハーの製造方法、同方法により得られるウェハー、及び同ウェハーから成る電子部品 |
| US7118458B2 (en) | 2004-08-23 | 2006-10-10 | Matsushita Electric Industrial Co., Ltd. | Method for polishing silicon carbide crystal substrate |
| JP2013125969A (ja) * | 2011-12-13 | 2013-06-24 | Samsung Corning Precision Materials Co Ltd | 半導体基板の研磨方法及び半導体基板の研磨装置 |
| US9337277B2 (en) | 2012-09-11 | 2016-05-10 | Dow Corning Corporation | High voltage power semiconductor device on SiC |
| US9165779B2 (en) | 2012-10-26 | 2015-10-20 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| US10002760B2 (en) | 2014-07-29 | 2018-06-19 | Dow Silicones Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
Also Published As
| Publication number | Publication date |
|---|---|
| US5895583A (en) | 1999-04-20 |
| EP0960436A1 (en) | 1999-12-01 |
| WO1998022978A1 (en) | 1998-05-28 |
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Legal Events
| Date | Code | Title | Description |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040928 |
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| A521 | Request for written amendment filed |
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| A131 | Notification of reasons for refusal |
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| A313 | Final decision of rejection without a dissenting response from the applicant |
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