JP2001506421A5 - - Google Patents
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- Publication number
- JP2001506421A5 JP2001506421A5 JP1998528053A JP52805398A JP2001506421A5 JP 2001506421 A5 JP2001506421 A5 JP 2001506421A5 JP 1998528053 A JP1998528053 A JP 1998528053A JP 52805398 A JP52805398 A JP 52805398A JP 2001506421 A5 JP2001506421 A5 JP 2001506421A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/768,618 | 1996-12-18 | ||
| US08/768,618 US6309979B1 (en) | 1996-12-18 | 1996-12-18 | Methods for reducing plasma-induced charging damage |
| PCT/US1997/024227 WO1998027581A1 (en) | 1996-12-18 | 1997-12-18 | Methods for reducing plasma-induced charging damage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001506421A JP2001506421A (ja) | 2001-05-15 |
| JP2001506421A5 true JP2001506421A5 (ja) | 2005-11-24 |
Family
ID=25083007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52805398A Pending JP2001506421A (ja) | 1996-12-18 | 1997-12-18 | プラズマ誘発帯電損傷を低減するための方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6309979B1 (ja) |
| EP (1) | EP0954877B1 (ja) |
| JP (1) | JP2001506421A (ja) |
| KR (1) | KR100535961B1 (ja) |
| AT (1) | ATE458272T1 (ja) |
| DE (1) | DE69739768D1 (ja) |
| TW (1) | TW380285B (ja) |
| WO (1) | WO1998027581A1 (ja) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6309979B1 (en) * | 1996-12-18 | 2001-10-30 | Lam Research Corporation | Methods for reducing plasma-induced charging damage |
| TW451344B (en) * | 2000-03-15 | 2001-08-21 | Winbond Electronics Corp | Profile controlling method to etch metal layer |
| DE10050047B4 (de) * | 2000-10-10 | 2006-07-13 | Promos Technologies, Inc. | Trockenreinigungsverfahren statt der herkömmlichen Nassreinigung nach der Ätzung von Metallen |
| DE10111989C2 (de) * | 2001-03-13 | 2003-11-06 | Infineon Technologies Ag | Verfahren zur Herstellung von Strukturen in einer Halbleiterschaltung, wobei eine Verringerung plasmainduzierter Aufladung eintritt |
| US6686254B2 (en) * | 2001-04-27 | 2004-02-03 | Motorola, Inc. | Semiconductor structure and method for reducing charge damage |
| US7109122B2 (en) * | 2002-11-29 | 2006-09-19 | Tokyo Electron Limited | Method and apparatus for reducing substrate charging damage |
| US7098141B1 (en) | 2003-03-03 | 2006-08-29 | Lam Research Corporation | Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures |
| US6869542B2 (en) * | 2003-03-12 | 2005-03-22 | International Business Machines Corporation | Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials |
| KR20050033216A (ko) * | 2003-10-06 | 2005-04-12 | 동부아남반도체 주식회사 | 고밀도 플라즈마 설비 |
| US7164095B2 (en) * | 2004-07-07 | 2007-01-16 | Noritsu Koki Co., Ltd. | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
| US7806077B2 (en) | 2004-07-30 | 2010-10-05 | Amarante Technologies, Inc. | Plasma nozzle array for providing uniform scalable microwave plasma generation |
| US20060021980A1 (en) * | 2004-07-30 | 2006-02-02 | Lee Sang H | System and method for controlling a power distribution within a microwave cavity |
| US7271363B2 (en) * | 2004-09-01 | 2007-09-18 | Noritsu Koki Co., Ltd. | Portable microwave plasma systems including a supply line for gas and microwaves |
| US7189939B2 (en) * | 2004-09-01 | 2007-03-13 | Noritsu Koki Co., Ltd. | Portable microwave plasma discharge unit |
| US20060052883A1 (en) * | 2004-09-08 | 2006-03-09 | Lee Sang H | System and method for optimizing data acquisition of plasma using a feedback control module |
| KR100584781B1 (ko) * | 2004-12-02 | 2006-05-29 | 삼성전자주식회사 | 반도체 장치의 제조 방법 및 이를 이용한 박막 제조 방법 |
| CN100413034C (zh) * | 2005-12-08 | 2008-08-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种能够防止器件等离子体损伤的多晶硅刻蚀工艺 |
| JP4678688B2 (ja) * | 2006-02-27 | 2011-04-27 | 次世代半導体材料技術研究組合 | プラズマ処理終了方法 |
| US7846800B2 (en) * | 2008-03-06 | 2010-12-07 | Chartered Semiconductor Manufacturing, Ltd. | Avoiding plasma charging in integrated circuits |
| US20100326954A1 (en) * | 2009-06-26 | 2010-12-30 | Zhen Yu Zhuo | Method of etching a multi-layer |
| GB2495256B (en) | 2010-06-25 | 2014-07-23 | Anastasios J Tousimis | Integrated processing and critical point drying systems for semiconductor and mems devices |
| JP6504755B2 (ja) * | 2014-06-25 | 2019-04-24 | キヤノン株式会社 | 半導体装置の製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63102318A (ja) * | 1986-10-20 | 1988-05-07 | Tokyo Electron Ltd | プラズマエツチング方法 |
| US4808259A (en) * | 1988-01-25 | 1989-02-28 | Intel Corporation | Plasma etching process for MOS circuit pregate etching utiliizing a multi-step power reduction recipe |
| US5160407A (en) | 1991-01-02 | 1992-11-03 | Applied Materials, Inc. | Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer |
| DE4132564C2 (de) | 1991-09-30 | 1994-11-03 | Siemens Ag | Verfahren zum Plasmaätzen mit mikrowellenenergiegespeister Voranregung der Ätzgase bei der Herstellung integrierter Halbleiterschaltungen und Verwendung des Verfahrens |
| US5242532A (en) | 1992-03-20 | 1993-09-07 | Vlsi Technology, Inc. | Dual mode plasma etching system and method of plasma endpoint detection |
| JP3211391B2 (ja) | 1992-07-29 | 2001-09-25 | 松下電器産業株式会社 | ドライエッチング方法 |
| JP3360404B2 (ja) | 1994-04-01 | 2002-12-24 | ソニー株式会社 | プラズマエッチング方法 |
| US5582679A (en) | 1994-09-12 | 1996-12-10 | Chartered Semiconductor Manufacturing Pte Ltd. | Enhanced metal etch process |
| EP0731501A1 (en) | 1995-03-08 | 1996-09-11 | International Business Machines Corporation | Method for plasma etching an oxide/polycide structure |
| US5667630A (en) | 1995-04-28 | 1997-09-16 | Vanguard International Semiconductor Corporation | Low charge-up reactive ion metal etch process |
| US6309979B1 (en) * | 1996-12-18 | 2001-10-30 | Lam Research Corporation | Methods for reducing plasma-induced charging damage |
-
1996
- 1996-12-18 US US08/768,618 patent/US6309979B1/en not_active Expired - Lifetime
-
1997
- 1997-12-18 WO PCT/US1997/024227 patent/WO1998027581A1/en active IP Right Grant
- 1997-12-18 AT AT97952689T patent/ATE458272T1/de not_active IP Right Cessation
- 1997-12-18 EP EP97952689A patent/EP0954877B1/en not_active Expired - Lifetime
- 1997-12-18 DE DE69739768T patent/DE69739768D1/de not_active Expired - Lifetime
- 1997-12-18 KR KR10-1999-7005109A patent/KR100535961B1/ko active IP Right Grant
- 1997-12-18 JP JP52805398A patent/JP2001506421A/ja active Pending
- 1997-12-18 TW TW086119179A patent/TW380285B/zh not_active IP Right Cessation