GB2495256B - Integrated processing and critical point drying systems for semiconductor and mems devices - Google Patents

Integrated processing and critical point drying systems for semiconductor and mems devices

Info

Publication number
GB2495256B
GB2495256B GB201300917A GB201300917A GB2495256B GB 2495256 B GB2495256 B GB 2495256B GB 201300917 A GB201300917 A GB 201300917A GB 201300917 A GB201300917 A GB 201300917A GB 2495256 B GB2495256 B GB 2495256B
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
semiconductor
critical point
mems devices
integrated processing
drying systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB201300917A
Other versions
GB201300917D0 (en )
GB2495256A (en )
Inventor
Anastasios J Tousimis
Original Assignee
Anastasios J Tousimis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00Subject matter not provided for in other groups of this subclass
    • B81C99/0005Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/0025Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001 - B81C99/002
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
GB201300917A 2010-06-25 2010-06-25 Integrated processing and critical point drying systems for semiconductor and mems devices Active GB2495256B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2010/039980 WO2011162770A1 (en) 2010-06-25 2010-06-25 Integrated processing and critical point drying systems for semiconductor and mems devices

Publications (3)

Publication Number Publication Date
GB201300917D0 GB201300917D0 (en) 2013-03-06
GB2495256A true GB2495256A (en) 2013-04-03
GB2495256B true GB2495256B (en) 2014-07-23

Family

ID=45371722

Family Applications (1)

Application Number Title Priority Date Filing Date
GB201300917A Active GB2495256B (en) 2010-06-25 2010-06-25 Integrated processing and critical point drying systems for semiconductor and mems devices

Country Status (3)

Country Link
US (2) US8453656B2 (en)
GB (1) GB2495256B (en)
WO (1) WO2011162770A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018033816A1 (en) 2016-08-16 2018-02-22 King Abdullah University Of Science And Technology Graphene materials and improved methods of making, drying, and applications

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US689162A (en) * 1901-08-02 1901-12-17 Jacob Caesar Window.
US5145508A (en) * 1988-03-04 1992-09-08 Nippon Telegraph And Telephone Corporation Method of making fluoride glass using barium β-diketones
US5647228A (en) * 1996-07-12 1997-07-15 Quantum Design, Inc. Apparatus and method for regulating temperature in a cryogenic test chamber
US6857200B1 (en) * 2000-05-25 2005-02-22 Tousimis Research Corporation Supercritical point drying apparatus for semiconductor device manufacturing and bio-medical sample processing
US6905555B2 (en) * 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104808A (en) 1977-08-11 1978-08-08 Horne John E Semi-automatic critical point drying apparatus
US5301701A (en) 1992-07-30 1994-04-12 Nafziger Charles P Single-chamber cleaning, rinsing and drying apparatus and method therefor
US5482682A (en) * 1993-05-17 1996-01-09 Florida Scientific Laboratories Inc. Apparatus for direct fluorination of a hydrocarbon by molecular fluorine gas
JP3529849B2 (en) 1994-05-23 2004-05-24 富士通株式会社 A method of manufacturing a semiconductor device
US6309979B1 (en) 1996-12-18 2001-10-30 Lam Research Corporation Methods for reducing plasma-induced charging damage
US6350322B1 (en) 1997-03-21 2002-02-26 Micron Technology, Inc. Method of reducing water spotting and oxide growth on a semiconductor structure
US5950104A (en) 1997-04-09 1999-09-07 Vanguard International Semiconductor Corporation Contact process using Y-contact etching
US6027967A (en) 1997-07-03 2000-02-22 Micron Technology Inc. Method of making a fin-like stacked capacitor
US6291356B1 (en) 1997-12-08 2001-09-18 Applied Materials, Inc. Method for etching silicon oxynitride and dielectric antireflection coatings
US6159860A (en) 1998-07-17 2000-12-12 Advanced Micro Devices, Inc. Method for etching layers on a semiconductor wafer in a single etching chamber
JP2000058643A (en) 1998-08-10 2000-02-25 Sony Corp Formation method for plug
DE19847455A1 (en) 1998-10-15 2000-04-27 Bosch Gmbh Robert Silicon multi-layer etching, especially for micromechanical sensor production, comprises etching trenches down to buried separation layer, etching exposed separation layer and etching underlying silicon layer
US6686292B1 (en) 1998-12-28 2004-02-03 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming uniform linewidth residue free patterned composite silicon containing dielectric layer/silicon stack layer
US6287960B1 (en) 2000-05-08 2001-09-11 Motorola, Inc. Self aligned dual inlaid patterning and etching
US6420098B1 (en) 2000-07-12 2002-07-16 Motorola, Inc. Method and system for manufacturing semiconductor devices on a wafer
KR100377174B1 (en) 2000-08-31 2003-03-26 주식회사 하이닉스반도체 Method for making capacitor
US6620681B1 (en) 2000-09-08 2003-09-16 Samsung Electronics Co., Ltd. Semiconductor device having desired gate profile and method of making the same
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6790763B2 (en) * 2000-12-04 2004-09-14 Ebara Corporation Substrate processing method
US6638833B1 (en) 2001-03-09 2003-10-28 Stmicroelectronics S.R.L. Process for the fabrication of integrated devices with reduction of damage from plasma
US6723654B2 (en) 2001-03-30 2004-04-20 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer
US20020197876A1 (en) 2001-06-13 2002-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Single-chamber dual-temperature photoresist dry strip
US6660642B2 (en) 2001-07-25 2003-12-09 Chartered Semiconductor Manufacturing Ltd. Toxic residual gas removal by non-reactive ion sputtering
US6837944B2 (en) 2001-07-25 2005-01-04 Akrion Llc Cleaning and drying method and apparatus
JP2003059905A (en) 2001-07-31 2003-02-28 Applied Materials Inc Etching method, method of manufacturing capacitor, and semiconductor device
US20030032292A1 (en) 2001-08-07 2003-02-13 Hitachi, Ltd. Fabrication method of semiconductor integrated circuit device
US20070272657A1 (en) 2001-12-07 2007-11-29 Eric Hansen Apparatus and method for single substrate processing
US6726848B2 (en) 2001-12-07 2004-04-27 Scp Global Technologies, Inc. Apparatus and method for single substrate processing
US20090029560A1 (en) 2001-12-07 2009-01-29 Applied Materials, Inc. Apparatus and method for single substrate processing
US20080000495A1 (en) 2001-12-07 2008-01-03 Eric Hansen Apparatus and method for single substrate processing
US7129178B1 (en) 2002-02-13 2006-10-31 Cypress Semiconductor Corp. Reducing defect formation within an etched semiconductor topography
US7875419B2 (en) 2002-10-29 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Method for removing resist pattern and method for manufacturing semiconductor device
KR100479977B1 (en) 2002-12-30 2005-03-31 동부아남반도체 주식회사 Method for etching a metal line in a semiconductor device
US6784105B1 (en) 2003-04-09 2004-08-31 Infineon Technologies North America Corp. Simultaneous native oxide removal and metal neutral deposition method
DE10339989B4 (en) 2003-08-29 2008-04-17 Advanced Micro Devices, Inc., Sunnyvale A process for producing a conformal spacer adjacent to a gate electrode structure
US20060051966A1 (en) 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
US7316746B2 (en) * 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
US7695632B2 (en) 2005-05-31 2010-04-13 Lam Research Corporation Critical dimension reduction and roughness control
US7432177B2 (en) 2005-06-15 2008-10-07 Applied Materials, Inc. Post-ion implant cleaning for silicon on insulator substrate preparation
US7435684B1 (en) 2006-07-26 2008-10-14 Novellus Systems, Inc. Resolving of fluorine loading effect in the vacuum chamber
US8017517B2 (en) 2007-06-07 2011-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Dual damascene process
US9418831B2 (en) 2007-07-30 2016-08-16 Planar Semiconductor, Inc. Method for precision cleaning and drying flat objects
US9275849B2 (en) 2007-07-30 2016-03-01 Planar Semiconductor, Inc. Single-chamber apparatus for precision cleaning and drying of flat objects

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US689162A (en) * 1901-08-02 1901-12-17 Jacob Caesar Window.
US5145508A (en) * 1988-03-04 1992-09-08 Nippon Telegraph And Telephone Corporation Method of making fluoride glass using barium β-diketones
US5647228A (en) * 1996-07-12 1997-07-15 Quantum Design, Inc. Apparatus and method for regulating temperature in a cryogenic test chamber
US6857200B1 (en) * 2000-05-25 2005-02-22 Tousimis Research Corporation Supercritical point drying apparatus for semiconductor device manufacturing and bio-medical sample processing
US6905555B2 (en) * 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes

Also Published As

Publication number Publication date Type
US20130056036A1 (en) 2013-03-07 application
US8453656B2 (en) 2013-06-04 grant
US8685172B2 (en) 2014-04-01 grant
GB201300917D0 (en) 2013-03-06 grant
WO2011162770A1 (en) 2011-12-29 application
US20130239996A1 (en) 2013-09-19 application
GB2495256A (en) 2013-04-03 application