JP2001502118A - ▲ii▼―▲vi▼半導体の選択エッチング - Google Patents
▲ii▼―▲vi▼半導体の選択エッチングInfo
- Publication number
- JP2001502118A JP2001502118A JP10517572A JP51757298A JP2001502118A JP 2001502118 A JP2001502118 A JP 2001502118A JP 10517572 A JP10517572 A JP 10517572A JP 51757298 A JP51757298 A JP 51757298A JP 2001502118 A JP2001502118 A JP 2001502118A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- etching
- etch
- cladding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000005530 etching Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 claims description 27
- 238000005253 cladding Methods 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000013500 data storage Methods 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 abstract description 4
- 229910052794 bromium Inorganic materials 0.000 abstract description 3
- 229910052801 chlorine Inorganic materials 0.000 abstract description 3
- 239000011777 magnesium Substances 0.000 description 15
- 238000010884 ion-beam technique Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 238000000992 sputter etching Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000007123 defense Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229920013683 Celanese Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.II-VI半導体レーザーであって、 II-VI半導体の第1のクラッド層と、 前記第1のクラッド層の上に重なるII-VI半導体の第1のガイド層と、 前記第1のガイド層の上に重なるII-VI半導体の活性領域と、 前記活性層の上に重なるII-VI半導体の第2のガイド層と、 前記第2のガイド層の上に重なるII-VI半導体の第2のクラッド層と、 前記第2のクラッド層内に載せられたエッチング停止層とを含む、II-VI半導 体レーザー。 2.前記第2のクラッド層がMgを含む、請求の範囲第1項に記載のII-VI半導 体レーザ。 3.前記エッチング停止層が、前記第2のクラッド層内のMg濃度よりも低いMg 濃度を包含する、請求の範囲第1、2項のいずれかに記載のII-VI半導体レーザ 。 4.前記第2のクラッド層が、前記第2のクラッド層の{111}結晶学的面と 実質的に平行な側壁を含む、請求の範囲第1項から第3項のいずれか一項に記載 のII-VI半導体レーザー。 5.前記エッチング停止層が少なくとも50Åの厚さを有する、請求の範囲第 1項から第4項のいずれか一項に記載のII-VI半導体レーザ。 6.請求の範囲第1項から第5項のいずれか一項に記載のII-VI半導体レーザ ーを含む光ディスクデータ記憶システム。 7.請求の範囲第1項から第5項のいずれか一項に記載のII-VI半導体レーザ ーを含む電子表示システム。 8.請求の範囲第1項から第5項のいずれか一項に記載のII-VI半導体レーザ ーを含むレーザーポインター。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/726,731 US5834330A (en) | 1996-10-07 | 1996-10-07 | Selective etch method for II-VI semiconductors |
US08/726,731 | 1997-09-09 | ||
US08/929,221 US6058123A (en) | 1996-10-07 | 1997-09-09 | Selective etch for II-VI semiconductors |
US08/929,221 | 1997-09-09 | ||
PCT/US1997/017364 WO1998015996A1 (en) | 1996-10-07 | 1997-09-26 | Selective etch for ii-vi semiconductors |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001502118A true JP2001502118A (ja) | 2001-02-13 |
JP2001502118A5 JP2001502118A5 (ja) | 2005-05-12 |
JP3903144B2 JP3903144B2 (ja) | 2007-04-11 |
Family
ID=27111378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51757298A Expired - Fee Related JP3903144B2 (ja) | 1996-10-07 | 1997-09-26 | ▲ii▼−▲vi▼半導体の選択エッチング |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0929921B1 (ja) |
JP (1) | JP3903144B2 (ja) |
KR (1) | KR100540611B1 (ja) |
CN (1) | CN1232578A (ja) |
AU (1) | AU4802097A (ja) |
DE (1) | DE69723090T2 (ja) |
WO (1) | WO1998015996A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120092673A (ko) * | 2009-11-18 | 2012-08-21 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Ⅱ-ⅵ족 반도체를 위한 신규한 습식 에칭제 및 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5488233A (en) * | 1993-03-11 | 1996-01-30 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device with compound semiconductor layer |
EP0619602A3 (en) * | 1993-04-07 | 1995-01-25 | Sony Corp | Semiconductor device and manufacturing method. |
JPH06342960A (ja) * | 1993-04-07 | 1994-12-13 | Sony Corp | 選択エッチング方法ならびに光電子素子およびその製造方法 |
JPH08122701A (ja) * | 1994-10-20 | 1996-05-17 | Moritetsukusu:Kk | レーザポインタ |
JPH09139549A (ja) * | 1995-11-16 | 1997-05-27 | Hitachi Ltd | 半導体発光素子 |
-
1997
- 1997-09-26 CN CN97198623A patent/CN1232578A/zh active Pending
- 1997-09-26 DE DE69723090T patent/DE69723090T2/de not_active Expired - Lifetime
- 1997-09-26 JP JP51757298A patent/JP3903144B2/ja not_active Expired - Fee Related
- 1997-09-26 WO PCT/US1997/017364 patent/WO1998015996A1/en active IP Right Grant
- 1997-09-26 KR KR1019997002950A patent/KR100540611B1/ko not_active IP Right Cessation
- 1997-09-26 EP EP97910719A patent/EP0929921B1/en not_active Expired - Lifetime
- 1997-09-26 AU AU48020/97A patent/AU4802097A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO1998015996A1 (en) | 1998-04-16 |
JP3903144B2 (ja) | 2007-04-11 |
DE69723090D1 (de) | 2003-07-31 |
DE69723090T2 (de) | 2004-05-06 |
EP0929921A1 (en) | 1999-07-21 |
KR100540611B1 (ko) | 2006-01-12 |
EP0929921B1 (en) | 2003-06-25 |
AU4802097A (en) | 1998-05-05 |
KR20000048919A (ko) | 2000-07-25 |
CN1232578A (zh) | 1999-10-20 |
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