JP2001345293A - 化学機械研磨方法及び化学機械研磨装置 - Google Patents
化学機械研磨方法及び化学機械研磨装置Info
- Publication number
- JP2001345293A JP2001345293A JP2000162174A JP2000162174A JP2001345293A JP 2001345293 A JP2001345293 A JP 2001345293A JP 2000162174 A JP2000162174 A JP 2000162174A JP 2000162174 A JP2000162174 A JP 2000162174A JP 2001345293 A JP2001345293 A JP 2001345293A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- polishing
- chemical mechanical
- mechanical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 126
- 239000000126 substance Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000007246 mechanism Effects 0.000 claims description 22
- 239000007788 liquid Substances 0.000 abstract description 36
- 235000012431 wafers Nutrition 0.000 description 63
- 238000004140 cleaning Methods 0.000 description 29
- 239000000463 material Substances 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- 239000000243 solution Substances 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000004744 fabric Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910008764 WNx Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- -1 and specifically Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000162174A JP2001345293A (ja) | 2000-05-31 | 2000-05-31 | 化学機械研磨方法及び化学機械研磨装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000162174A JP2001345293A (ja) | 2000-05-31 | 2000-05-31 | 化学機械研磨方法及び化学機械研磨装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001345293A true JP2001345293A (ja) | 2001-12-14 |
| JP2001345293A5 JP2001345293A5 (enExample) | 2005-06-30 |
Family
ID=18666106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000162174A Pending JP2001345293A (ja) | 2000-05-31 | 2000-05-31 | 化学機械研磨方法及び化学機械研磨装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001345293A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005064450A (ja) * | 2003-07-31 | 2005-03-10 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2006261681A (ja) * | 2005-03-17 | 2006-09-28 | Samsung Electronics Co Ltd | ポリシリコン薄膜トランジスタ基板の製造方法及び液晶表示装置 |
| US7569135B2 (en) | 2002-01-31 | 2009-08-04 | Ebara Corporation | Electrolytic processing apparatus and substrate processing apparatus and method |
| JP2009266984A (ja) * | 2008-04-24 | 2009-11-12 | Spansion Llc | 半導体装置の製造方法 |
| JP2014507813A (ja) * | 2011-03-07 | 2014-03-27 | エーワ ダイヤモンド インダストリアル カンパニー，リミテッド | 軟弱パッド用コンディショナーおよびその製造方法 |
-
2000
- 2000-05-31 JP JP2000162174A patent/JP2001345293A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7569135B2 (en) | 2002-01-31 | 2009-08-04 | Ebara Corporation | Electrolytic processing apparatus and substrate processing apparatus and method |
| JP2005064450A (ja) * | 2003-07-31 | 2005-03-10 | Fujitsu Ltd | 半導体装置の製造方法 |
| US7951715B2 (en) | 2003-07-31 | 2011-05-31 | Fujitsu Semiconductor Limited | Semiconductor device fabrication method |
| JP2006261681A (ja) * | 2005-03-17 | 2006-09-28 | Samsung Electronics Co Ltd | ポリシリコン薄膜トランジスタ基板の製造方法及び液晶表示装置 |
| JP2009266984A (ja) * | 2008-04-24 | 2009-11-12 | Spansion Llc | 半導体装置の製造方法 |
| JP2014507813A (ja) * | 2011-03-07 | 2014-03-27 | エーワ ダイヤモンド インダストリアル カンパニー，リミテッド | 軟弱パッド用コンディショナーおよびその製造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6494985B1 (en) | Method and apparatus for polishing a substrate | |
| US6026830A (en) | Post-CMP cleaner apparatus and method | |
| US6283822B1 (en) | Polishing apparatus | |
| US6722964B2 (en) | Polishing apparatus and method | |
| US20010024691A1 (en) | Semiconductor substrate processing apparatus and method | |
| KR101471967B1 (ko) | 대상물을 폴리싱하는 방법 및 장치 | |
| JPH10163138A (ja) | 半導体装置の製造方法および研磨装置 | |
| US6667238B1 (en) | Polishing method and apparatus | |
| JP2001345292A (ja) | ポリッシング方法および装置 | |
| US20050252779A1 (en) | System and method for processing semiconductor wafers using different wafer processes | |
| JP2001345293A (ja) | 化学機械研磨方法及び化学機械研磨装置 | |
| US6833324B2 (en) | Process and device for cleaning a semiconductor wafer | |
| JP3556148B2 (ja) | ウェハ研磨装置 | |
| JP2000040684A (ja) | 洗浄装置 | |
| KR102483002B1 (ko) | 기판 처리 장치 | |
| JP2001287142A (ja) | 基板エッジ研磨装置 | |
| JPH08250457A (ja) | 縦型ウエハ研磨装置 | |
| JP2002093759A (ja) | 研磨装置、この研磨装置を用いた半導体デバイス製造方法及びこの製造方法により製造された半導体デバイス | |
| US20220274228A1 (en) | Substrate polishing system | |
| KR20070077979A (ko) | 화학적 기계적 연마 장치 및 이를 이용한 웨이퍼의 연마방법 | |
| KR100744221B1 (ko) | 화학적 기계적 연마장치와 이를 이용한 화학적 기계적연마공정 | |
| JP6431159B2 (ja) | 基板洗浄装置 | |
| EP1111659A2 (en) | Apparatus and methods of chemical mechanical polishing | |
| KR20040079612A (ko) | 화학적 기계적 연마 장치 | |
| JP2005045035A (ja) | 基板の洗浄方法、基板の研磨及び洗浄方法、基板洗浄装置並びに基板研磨及び洗浄システム |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041025 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041025 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061115 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061121 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070313 |