JP2001324723A - 半導体装置及びその製造方法。 - Google Patents

半導体装置及びその製造方法。

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Publication number
JP2001324723A
JP2001324723A JP2000141026A JP2000141026A JP2001324723A JP 2001324723 A JP2001324723 A JP 2001324723A JP 2000141026 A JP2000141026 A JP 2000141026A JP 2000141026 A JP2000141026 A JP 2000141026A JP 2001324723 A JP2001324723 A JP 2001324723A
Authority
JP
Japan
Prior art keywords
film
liquid crystal
pixel electrode
semiconductor device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000141026A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001324723A5 (enExample
Inventor
Rumo Satake
瑠茂 佐竹
Hideki Katsura
秀樹 桂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000141026A priority Critical patent/JP2001324723A/ja
Publication of JP2001324723A publication Critical patent/JP2001324723A/ja
Publication of JP2001324723A5 publication Critical patent/JP2001324723A5/ja
Withdrawn legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2000141026A 2000-05-12 2000-05-12 半導体装置及びその製造方法。 Withdrawn JP2001324723A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000141026A JP2001324723A (ja) 2000-05-12 2000-05-12 半導体装置及びその製造方法。

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000141026A JP2001324723A (ja) 2000-05-12 2000-05-12 半導体装置及びその製造方法。

Publications (2)

Publication Number Publication Date
JP2001324723A true JP2001324723A (ja) 2001-11-22
JP2001324723A5 JP2001324723A5 (enExample) 2007-05-24

Family

ID=18648204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000141026A Withdrawn JP2001324723A (ja) 2000-05-12 2000-05-12 半導体装置及びその製造方法。

Country Status (1)

Country Link
JP (1) JP2001324723A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340852A (ja) * 2002-01-28 2005-12-08 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP2007505025A (ja) * 2003-09-12 2007-03-08 ハー　ツェー　シュタルク　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング バルブ金属酸化物粉末及びその製造方法
US7379136B2 (en) 2003-12-29 2008-05-27 Lg.Philips Lcd Co., Ltd. Transflective type liquid crystal display device and method for fabricating the same
US7737506B2 (en) 2002-01-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7795734B2 (en) 2002-01-28 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340852A (ja) * 2002-01-28 2005-12-08 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
US7737506B2 (en) 2002-01-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7795734B2 (en) 2002-01-28 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2007505025A (ja) * 2003-09-12 2007-03-08 ハー　ツェー　シュタルク　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング バルブ金属酸化物粉末及びその製造方法
JP2012126645A (ja) * 2003-09-12 2012-07-05 Hc Starck Gmbh バルブ金属酸化物粉末及びその製造方法
US7379136B2 (en) 2003-12-29 2008-05-27 Lg.Philips Lcd Co., Ltd. Transflective type liquid crystal display device and method for fabricating the same

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