JP2001320074A - 起電力型赤外線検知セル - Google Patents

起電力型赤外線検知セル

Info

Publication number
JP2001320074A
JP2001320074A JP80000195A JP80000195A JP2001320074A JP 2001320074 A JP2001320074 A JP 2001320074A JP 80000195 A JP80000195 A JP 80000195A JP 80000195 A JP80000195 A JP 80000195A JP 2001320074 A JP2001320074 A JP 2001320074A
Authority
JP
Japan
Prior art keywords
segment
photovoltaic
segments
wavelength
sensing cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP80000195A
Other languages
English (en)
Japanese (ja)
Inventor
Thomas R Schimert
アール．シマート トーマス
Dayton D Eden
ディー．エデン デイトン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lockheed Martin Corp
Original Assignee
Loral Vought Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Loral Vought Systems Corp filed Critical Loral Vought Systems Corp
Publication of JP2001320074A publication Critical patent/JP2001320074A/ja
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Radiation Pyrometers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP80000195A 1994-03-15 1995-03-15 起電力型赤外線検知セル Abandoned JP2001320074A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/218472 1994-03-15
US08/218,472 US6133570A (en) 1994-03-15 1994-03-15 Semiconductor photovoltaic diffractive resonant optical cavity infrared detector

Publications (1)

Publication Number Publication Date
JP2001320074A true JP2001320074A (ja) 2001-11-16

Family

ID=22815256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP80000195A Abandoned JP2001320074A (ja) 1994-03-15 1995-03-15 起電力型赤外線検知セル

Country Status (7)

Country Link
US (1) US6133570A (enExample)
JP (1) JP2001320074A (enExample)
CA (1) CA2141966A1 (enExample)
DE (1) DE19509358B4 (enExample)
FR (1) FR2803949A1 (enExample)
GB (1) GB2366665B (enExample)
NL (1) NL194815C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012154762A (ja) * 2011-01-26 2012-08-16 Mitsubishi Electric Corp 赤外線センサおよび赤外線センサアレイ

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690014B1 (en) 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
US7026602B2 (en) * 2001-04-13 2006-04-11 Research Triangle Institute Electromagnetic radiation detectors having a microelectromechanical shutter device
US6777681B1 (en) 2001-04-25 2004-08-17 Raytheon Company Infrared detector with amorphous silicon detector elements, and a method of making it
DE102004045105A1 (de) * 2004-03-19 2005-10-13 Daimlerchrysler Ag Verwendung eines Photovoltaik-Elementes als Sensor zur Funktionskontrolle von Sendern im infraroten Bereich
US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
US7655909B2 (en) * 2006-01-26 2010-02-02 L-3 Communications Corporation Infrared detector elements and methods of forming same
US7462831B2 (en) * 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
US8153980B1 (en) 2006-11-30 2012-04-10 L-3 Communications Corp. Color correction for radiation detectors
DE102008032555B3 (de) * 2008-07-10 2010-01-21 Innolas Systems Gmbh Strukturierungsvorrichtung für die Strukturierung von plattenförmigen Elementen, insbesondere von Dünnschicht-Solarmodulen, entsprechendes Strukturierungsverfahren sowie Verwendung derselben
FR2938973B1 (fr) * 2008-11-27 2011-03-04 Sagem Defense Securite Cellules matricielles photosensibles dans l'infrarouge a base d'antimoniure sur substrat optiquement transparent et procede de fabrication associe
US9214583B2 (en) * 2010-03-19 2015-12-15 Hirak Mitra Method to build transparent polarizing solar cell
US8765514B1 (en) 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
CN108565310B (zh) * 2017-12-14 2020-03-31 上海集成电路研发中心有限公司 一种红外探测器及其制造方法
US10516216B2 (en) 2018-01-12 2019-12-24 Eagle Technology, Llc Deployable reflector antenna system
US10707552B2 (en) 2018-08-21 2020-07-07 Eagle Technology, Llc Folded rib truss structure for reflector antenna with zero over stretch

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620364A (en) * 1984-06-11 1986-11-04 Spire Corporation Method of making a cross-grooved solar cell
US4639756A (en) * 1986-05-05 1987-01-27 Santa Barbara Research Center Graded gap inversion layer photodiode array
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
JPH0766981B2 (ja) * 1987-03-26 1995-07-19 日本電気株式会社 赤外線センサ
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
US5179283A (en) * 1989-08-07 1993-01-12 Santa Barbara Research Center Infrared detector focal plane
US5075749A (en) * 1989-12-29 1991-12-24 At&T Bell Laboratories Optical device including a grating
US5047622A (en) * 1990-06-18 1991-09-10 The United States Of America As Represented By The Secretary Of The Navy Long wavelength infrared detector with heterojunction
SE468188B (sv) * 1991-04-08 1992-11-16 Stiftelsen Inst Foer Mikroelek Metod foer inkoppling av straalning i en infraroeddetektor, jaemte anordning

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012154762A (ja) * 2011-01-26 2012-08-16 Mitsubishi Electric Corp 赤外線センサおよび赤外線センサアレイ

Also Published As

Publication number Publication date
NL194815B (nl) 2002-11-01
FR2803949A1 (fr) 2001-07-20
CA2141966A1 (en) 2002-07-10
US6133570A (en) 2000-10-17
GB9504243D0 (en) 2001-11-28
NL9500502A (enExample) 2001-06-01
GB2366665B (en) 2002-06-26
DE19509358A1 (de) 2003-07-10
NL194815C (nl) 2003-03-04
DE19509358B4 (de) 2005-06-16
GB2366665A (en) 2002-03-13

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Legal Events

Date Code Title Description
A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20040422