DE19509358B4 - Photovoltaischer Halbleiter-Infrarotdetektor - Google Patents

Photovoltaischer Halbleiter-Infrarotdetektor Download PDF

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Publication number
DE19509358B4
DE19509358B4 DE19509358A DE19509358A DE19509358B4 DE 19509358 B4 DE19509358 B4 DE 19509358B4 DE 19509358 A DE19509358 A DE 19509358A DE 19509358 A DE19509358 A DE 19509358A DE 19509358 B4 DE19509358 B4 DE 19509358B4
Authority
DE
Germany
Prior art keywords
segments
photovoltaic
detector cell
planar
cell according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19509358A
Other languages
German (de)
English (en)
Other versions
DE19509358A1 (de
Inventor
Thomas R. Ovilla Schimert
Dayton D. Dallas Eden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lockheed Martin Corp
Original Assignee
Lockheed Corp
Lockheed Martin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lockheed Corp, Lockheed Martin Corp filed Critical Lockheed Corp
Publication of DE19509358A1 publication Critical patent/DE19509358A1/de
Application granted granted Critical
Publication of DE19509358B4 publication Critical patent/DE19509358B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Radiation Pyrometers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE19509358A 1994-03-15 1995-03-15 Photovoltaischer Halbleiter-Infrarotdetektor Expired - Fee Related DE19509358B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/218472 1994-03-15
US08/218,472 US6133570A (en) 1994-03-15 1994-03-15 Semiconductor photovoltaic diffractive resonant optical cavity infrared detector

Publications (2)

Publication Number Publication Date
DE19509358A1 DE19509358A1 (de) 2003-07-10
DE19509358B4 true DE19509358B4 (de) 2005-06-16

Family

ID=22815256

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19509358A Expired - Fee Related DE19509358B4 (de) 1994-03-15 1995-03-15 Photovoltaischer Halbleiter-Infrarotdetektor

Country Status (7)

Country Link
US (1) US6133570A (enExample)
JP (1) JP2001320074A (enExample)
CA (1) CA2141966A1 (enExample)
DE (1) DE19509358B4 (enExample)
FR (1) FR2803949A1 (enExample)
GB (1) GB2366665B (enExample)
NL (1) NL194815C (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6690014B1 (en) 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
US7026602B2 (en) * 2001-04-13 2006-04-11 Research Triangle Institute Electromagnetic radiation detectors having a microelectromechanical shutter device
US6777681B1 (en) 2001-04-25 2004-08-17 Raytheon Company Infrared detector with amorphous silicon detector elements, and a method of making it
DE102004045105A1 (de) * 2004-03-19 2005-10-13 Daimlerchrysler Ag Verwendung eines Photovoltaik-Elementes als Sensor zur Funktionskontrolle von Sendern im infraroten Bereich
US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
US7655909B2 (en) * 2006-01-26 2010-02-02 L-3 Communications Corporation Infrared detector elements and methods of forming same
US7462831B2 (en) * 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
US8153980B1 (en) 2006-11-30 2012-04-10 L-3 Communications Corp. Color correction for radiation detectors
DE102008032555B3 (de) * 2008-07-10 2010-01-21 Innolas Systems Gmbh Strukturierungsvorrichtung für die Strukturierung von plattenförmigen Elementen, insbesondere von Dünnschicht-Solarmodulen, entsprechendes Strukturierungsverfahren sowie Verwendung derselben
FR2938973B1 (fr) * 2008-11-27 2011-03-04 Sagem Defense Securite Cellules matricielles photosensibles dans l'infrarouge a base d'antimoniure sur substrat optiquement transparent et procede de fabrication associe
US9214583B2 (en) * 2010-03-19 2015-12-15 Hirak Mitra Method to build transparent polarizing solar cell
US8765514B1 (en) 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
JP5706174B2 (ja) * 2011-01-26 2015-04-22 三菱電機株式会社 赤外線センサおよび赤外線センサアレイ
CN108565310B (zh) * 2017-12-14 2020-03-31 上海集成电路研发中心有限公司 一种红外探测器及其制造方法
US10516216B2 (en) 2018-01-12 2019-12-24 Eagle Technology, Llc Deployable reflector antenna system
US10707552B2 (en) 2018-08-21 2020-07-07 Eagle Technology, Llc Folded rib truss structure for reflector antenna with zero over stretch

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
US5075749A (en) * 1989-12-29 1991-12-24 At&T Bell Laboratories Optical device including a grating
US5179283A (en) * 1989-08-07 1993-01-12 Santa Barbara Research Center Infrared detector focal plane

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620364A (en) * 1984-06-11 1986-11-04 Spire Corporation Method of making a cross-grooved solar cell
US4639756A (en) * 1986-05-05 1987-01-27 Santa Barbara Research Center Graded gap inversion layer photodiode array
JPH0766981B2 (ja) * 1987-03-26 1995-07-19 日本電気株式会社 赤外線センサ
US5047622A (en) * 1990-06-18 1991-09-10 The United States Of America As Represented By The Secretary Of The Navy Long wavelength infrared detector with heterojunction
SE468188B (sv) * 1991-04-08 1992-11-16 Stiftelsen Inst Foer Mikroelek Metod foer inkoppling av straalning i en infraroeddetektor, jaemte anordning

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
US5179283A (en) * 1989-08-07 1993-01-12 Santa Barbara Research Center Infrared detector focal plane
US5075749A (en) * 1989-12-29 1991-12-24 At&T Bell Laboratories Optical device including a grating

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
M.B.Reine et al,"Photovoltaic Infrared Detectors" Semiconductrs and Semimetals, Academic Press,1981 *
T.K.Gaylord et al."Analysis and Application of Op- tical Diffraction by Gratings," Proc. of the IEEE vol.73, no.5, may 1985, 894-937
T.K.Gaylord et al."Analysis and Application of Op-tical Diffraction by Gratings," Proc. of the IEEE vol.73, no.5, may 1985, 894-937 *

Also Published As

Publication number Publication date
NL194815B (nl) 2002-11-01
FR2803949A1 (fr) 2001-07-20
CA2141966A1 (en) 2002-07-10
US6133570A (en) 2000-10-17
GB9504243D0 (en) 2001-11-28
JP2001320074A (ja) 2001-11-16
NL9500502A (enExample) 2001-06-01
GB2366665B (en) 2002-06-26
DE19509358A1 (de) 2003-07-10
NL194815C (nl) 2003-03-04
GB2366665A (en) 2002-03-13

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee