FR2803949A1 - Detecteur a infrarouges a cavite optique resonante a diffraction photovoltaique a semi-conducteur - Google Patents

Detecteur a infrarouges a cavite optique resonante a diffraction photovoltaique a semi-conducteur Download PDF

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Publication number
FR2803949A1
FR2803949A1 FR9503016A FR9503016A FR2803949A1 FR 2803949 A1 FR2803949 A1 FR 2803949A1 FR 9503016 A FR9503016 A FR 9503016A FR 9503016 A FR9503016 A FR 9503016A FR 2803949 A1 FR2803949 A1 FR 2803949A1
Authority
FR
France
Prior art keywords
segments
photovoltaic
detector cell
conductive
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR9503016A
Other languages
English (en)
French (fr)
Inventor
Thomas R Schimert
Dayton D Eden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lockheed Martin Corp
Original Assignee
Loral Vought Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Loral Vought Systems Corp filed Critical Loral Vought Systems Corp
Publication of FR2803949A1 publication Critical patent/FR2803949A1/fr
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Radiation Pyrometers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR9503016A 1994-03-15 1995-03-15 Detecteur a infrarouges a cavite optique resonante a diffraction photovoltaique a semi-conducteur Pending FR2803949A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/218,472 US6133570A (en) 1994-03-15 1994-03-15 Semiconductor photovoltaic diffractive resonant optical cavity infrared detector

Publications (1)

Publication Number Publication Date
FR2803949A1 true FR2803949A1 (fr) 2001-07-20

Family

ID=22815256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9503016A Pending FR2803949A1 (fr) 1994-03-15 1995-03-15 Detecteur a infrarouges a cavite optique resonante a diffraction photovoltaique a semi-conducteur

Country Status (7)

Country Link
US (1) US6133570A (enExample)
JP (1) JP2001320074A (enExample)
CA (1) CA2141966A1 (enExample)
DE (1) DE19509358B4 (enExample)
FR (1) FR2803949A1 (enExample)
GB (1) GB2366665B (enExample)
NL (1) NL194815C (enExample)

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US6690014B1 (en) 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
US7026602B2 (en) * 2001-04-13 2006-04-11 Research Triangle Institute Electromagnetic radiation detectors having a microelectromechanical shutter device
US6777681B1 (en) 2001-04-25 2004-08-17 Raytheon Company Infrared detector with amorphous silicon detector elements, and a method of making it
DE102004045105A1 (de) * 2004-03-19 2005-10-13 Daimlerchrysler Ag Verwendung eines Photovoltaik-Elementes als Sensor zur Funktionskontrolle von Sendern im infraroten Bereich
US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
US7655909B2 (en) * 2006-01-26 2010-02-02 L-3 Communications Corporation Infrared detector elements and methods of forming same
US7462831B2 (en) * 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
US8153980B1 (en) 2006-11-30 2012-04-10 L-3 Communications Corp. Color correction for radiation detectors
DE102008032555B3 (de) * 2008-07-10 2010-01-21 Innolas Systems Gmbh Strukturierungsvorrichtung für die Strukturierung von plattenförmigen Elementen, insbesondere von Dünnschicht-Solarmodulen, entsprechendes Strukturierungsverfahren sowie Verwendung derselben
FR2938973B1 (fr) * 2008-11-27 2011-03-04 Sagem Defense Securite Cellules matricielles photosensibles dans l'infrarouge a base d'antimoniure sur substrat optiquement transparent et procede de fabrication associe
US9214583B2 (en) * 2010-03-19 2015-12-15 Hirak Mitra Method to build transparent polarizing solar cell
US8765514B1 (en) 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
JP5706174B2 (ja) * 2011-01-26 2015-04-22 三菱電機株式会社 赤外線センサおよび赤外線センサアレイ
CN108565310B (zh) * 2017-12-14 2020-03-31 上海集成电路研发中心有限公司 一种红外探测器及其制造方法
US10516216B2 (en) 2018-01-12 2019-12-24 Eagle Technology, Llc Deployable reflector antenna system
US10707552B2 (en) 2018-08-21 2020-07-07 Eagle Technology, Llc Folded rib truss structure for reflector antenna with zero over stretch

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0508970A1 (en) * 1991-04-08 1992-10-14 Im Institutet För Mikroelektronik Detector for infrared radiation

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
US4620364A (en) * 1984-06-11 1986-11-04 Spire Corporation Method of making a cross-grooved solar cell
US4639756A (en) * 1986-05-05 1987-01-27 Santa Barbara Research Center Graded gap inversion layer photodiode array
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
JPH0766981B2 (ja) * 1987-03-26 1995-07-19 日本電気株式会社 赤外線センサ
US4970567A (en) * 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
US5179283A (en) * 1989-08-07 1993-01-12 Santa Barbara Research Center Infrared detector focal plane
US5075749A (en) * 1989-12-29 1991-12-24 At&T Bell Laboratories Optical device including a grating
US5047622A (en) * 1990-06-18 1991-09-10 The United States Of America As Represented By The Secretary Of The Navy Long wavelength infrared detector with heterojunction

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0508970A1 (en) * 1991-04-08 1992-10-14 Im Institutet För Mikroelektronik Detector for infrared radiation

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ANDERSSON J Y ET AL: "GRATING-COUPLED QUANTUM-WELL INFRARED DETECTORS: THEORY AND PERFORMANCE", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 71, no. 7, 1 April 1992 (1992-04-01), pages 3600 - 3610, XP002937735, ISSN: 0021-8979 *
ANDERSSON J Y ET AL: "NEAR-UNITY QUANTUM EFFICIENCY OF ALGAAS/GAAS QUANTUM WELL INFRARED DETECTORS USING A WAVEGUIDE WITH A DOUBLY PERIODIC GRATING COUPLER", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 59, no. 7, 12 August 1991 (1991-08-12), pages 857 - 859, XP000233772, ISSN: 0003-6951 *
LUNDQVIST L ET AL: "EFFICIENCY OF GRATING COUPLED ALGAAS/GAAS QUANTUM WELL INFRARED DETECTORS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 63, no. 24, 13 December 1993 (1993-12-13), pages 3361 - 3363, XP000416543, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
NL194815B (nl) 2002-11-01
CA2141966A1 (en) 2002-07-10
US6133570A (en) 2000-10-17
GB9504243D0 (en) 2001-11-28
JP2001320074A (ja) 2001-11-16
NL9500502A (enExample) 2001-06-01
GB2366665B (en) 2002-06-26
DE19509358A1 (de) 2003-07-10
NL194815C (nl) 2003-03-04
DE19509358B4 (de) 2005-06-16
GB2366665A (en) 2002-03-13

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