JP2001316895A5 - - Google Patents

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Publication number
JP2001316895A5
JP2001316895A5 JP2000135246A JP2000135246A JP2001316895A5 JP 2001316895 A5 JP2001316895 A5 JP 2001316895A5 JP 2000135246 A JP2000135246 A JP 2000135246A JP 2000135246 A JP2000135246 A JP 2000135246A JP 2001316895 A5 JP2001316895 A5 JP 2001316895A5
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JP
Japan
Prior art keywords
anode
processed
plating
electrode
bath
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Pending
Application number
JP2000135246A
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English (en)
Japanese (ja)
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JP2001316895A (ja
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Priority to JP2000135246A priority Critical patent/JP2001316895A/ja
Priority claimed from JP2000135246A external-priority patent/JP2001316895A/ja
Publication of JP2001316895A publication Critical patent/JP2001316895A/ja
Publication of JP2001316895A5 publication Critical patent/JP2001316895A5/ja
Pending legal-status Critical Current

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JP2000135246A 2000-05-08 2000-05-08 電解メッキ装置及び電解メッキ方法 Pending JP2001316895A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000135246A JP2001316895A (ja) 2000-05-08 2000-05-08 電解メッキ装置及び電解メッキ方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000135246A JP2001316895A (ja) 2000-05-08 2000-05-08 電解メッキ装置及び電解メッキ方法

Publications (2)

Publication Number Publication Date
JP2001316895A JP2001316895A (ja) 2001-11-16
JP2001316895A5 true JP2001316895A5 (enExample) 2007-04-26

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ID=18643360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000135246A Pending JP2001316895A (ja) 2000-05-08 2000-05-08 電解メッキ装置及び電解メッキ方法

Country Status (1)

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JP (1) JP2001316895A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100827481B1 (ko) * 2006-08-24 2008-05-06 동부일렉트로닉스 주식회사 웨이퍼의 도금장치
KR101191543B1 (ko) 2010-08-09 2012-10-15 주식회사 케이씨텍 기판 도금 장치
KR101217460B1 (ko) * 2010-11-11 2013-01-02 주식회사 케이씨텍 기판 도금 장치
JP6485029B2 (ja) * 2014-12-18 2019-03-20 三菱マテリアル株式会社 電解めっき方法及び電解めっき装置
CN117721511A (zh) * 2024-02-07 2024-03-19 苏州智程半导体科技股份有限公司 一种快速补充金属离子的半导体晶圆电化学沉积设备

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